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Rachel S. Goldman - Publications

Affiliations: 
Materials Science and Engineering University of Michigan, Ann Arbor, Ann Arbor, MI 
Area:
Materials Science Engineering
Website:
https://mse.engin.umich.edu/people/rsgold
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110 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Azulay AR, Turkulets Y, Gaudio DD, Goldman RS, Shalish I. Why do nanowires grow with their c-axis vertically-aligned in the absence of epitaxy? Scientific Reports. 10: 6554. PMID 32300133 DOI: 10.1038/S41598-020-63500-Y  0.335
2020 Greenhill C, Chang AS, Zech ES, Clark S, Balakrishnan G, Goldman RS. Influence of quantum dot morphology on the optical properties of GaSb/GaAs multilayers Applied Physics Letters. 116: 252107. DOI: 10.1063/5.0011094  0.451
2020 Lu H, Reese C, Jeon S, Sundar A, Fan Y, Rizzi E, Zhuo Y, Qi L, Goldman RS. Mechanisms of GaN quantum dot formation during nitridation of Ga droplets Applied Physics Letters. 116: 62107. DOI: 10.1063/1.5133965  0.44
2019 Del Gaudio D, Boone CT, Sallans K, Mason E, Williamson AJ, Yarlagadda S, Turkulets Y, Heron JT, Shalish I, Goldman RS. Morphological design of complex oxides during pulsed-laser deposition: The role of plasma-plume expansion Journal of Applied Physics. 126: 184301. DOI: 10.1063/1.5119922  0.31
2019 Kang M, Goldman RS. Ion irradiation of III–V semiconductor surfaces: From self-assembled nanostructures to plasmonic crystals Applied Physics Reviews. 6: 41307. DOI: 10.1063/1.5079908  0.326
2019 Occena J, Jen T, Mitchell JW, Linhart WM, Pavelescu E-, Kudrawiec R, Wang YQ, Goldman RS. Mapping the composition-dependence of the energy bandgap of GaAsNBi alloys Applied Physics Letters. 115: 82106. DOI: 10.1063/1.5057424  0.352
2019 Chang AS, Walrath JC, Frost T, Greenhill C, Occena J, Hazari A, Bhattacharya P, Goldman RS. Formation and properties of InGaN QDs: Influence of substrates Applied Physics Letters. 114: 62106. DOI: 10.1063/1.5053856  0.469
2018 Occena J, Jen T, Lu H, Carter BA, Jimson TS, Norman AG, Goldman RS. Surfactant-induced chemical ordering of GaAsN:Bi Applied Physics Letters. 113: 211602. DOI: 10.1063/1.5045606  0.324
2018 Del Gaudio D, Aagesen LK, Huang S, Johnson TM, Faeth BD, Lu H, Ziff RM, Goldman RS. Influence of surface nano-patterning on the placement of InAs quantum dots Journal of Applied Physics. 124: 115307. DOI: 10.1063/1.5008518  0.42
2017 Kang M, Jeon S, Jen T, Lee J, Sih V, Goldman RS. Formation of embedded plasmonic Ga nanoparticle arrays and their influence on GaAs photoluminescence Journal of Applied Physics. 122: 033102. DOI: 10.1063/1.4990946  0.359
2016 Mintairov AM, He Y, Merz JL, Jin Y, Goldman RS, Kudrawiec R, Misiewicz J, Akimov IA, Yakovlev DR, Bayer M. Quasi-ordering of composition fluctuations and their interaction with lattice imperfections in an optical spectra of dilute nitride alloys Semiconductor Science and Technology. 31. DOI: 10.1088/0268-1242/31/9/095012  0.326
2016 Field RL, Occena J, Jen T, Gaudio DD, Yarlagadda B, Kurdak C, Goldman RS. Influence of surface reconstruction on dopant incorporation and transport properties of GaAs(Bi) alloys Applied Physics Letters. 109: 252105. DOI: 10.1063/1.4971998  0.372
2016 Liu W, Chi H, Walrath JC, Chang AS, Stoica VA, Endicott L, Tang X, Goldman RS, Uher C. Origins of enhanced thermoelectric power factor in topologically insulating Bi0.64Sb1.36Te3 thin films Applied Physics Letters. 108. DOI: 10.1063/1.4940923  0.314
2015 Canniff JC, Jeon S, Huang S, Goldman RS. Formation and coarsening of near-surface Ga nanoparticles on SiNx Applied Physics Letters. 106. DOI: 10.1063/1.4922454  0.321
2015 Walrath JC, Lin YH, Huang S, Goldman RS. Profiling the local carrier concentration across a semiconductor quantum dot Applied Physics Letters. 106. DOI: 10.1063/1.4919919  0.441
2015 Warren MV, Canniff JC, Chi H, Naab F, Stoica VA, Clarke R, Uher C, Goldman RS. Influence of Bi on embedded nanocrystal formation and thermoelectric properties of GaAs Journal of Applied Physics. 117. DOI: 10.1063/1.4906992  0.386
2014 Fahrenkrug E, Gu J, Jeon S, Veneman PA, Goldman RS, Maldonado S. Room-temperature epitaxial electrodeposition of single-crystalline germanium nanowires at the wafer scale from an aqueous solution. Nano Letters. 14: 847-52. PMID 24417670 DOI: 10.1021/Nl404228Z  0.376
2014 Li Y, Stoica VA, Sun K, Liu W, Endicott L, Walrath JC, Chang AS, Lin YH, Pipe KP, Goldman RS, Ctirad Uher RC. Ordered horizontal Sb2Te3 nanowires induced by femtosecond lasers Applied Physics Letters. 105. DOI: 10.1063/1.4902073  0.326
2014 Abere MJ, Chen C, Rittman DR, Kang M, Goldman RS, Phillips JD, Torralva B, Yalisove SM. Nanodot formation induced by femtosecond laser irradiation Applied Physics Letters. 105. DOI: 10.1063/1.4899066  0.505
2014 Chang AS, Zech ES, Kim TW, Lin YH, Mawst LJ, Goldman RS. Influence of Sb incorporation on InGaAs(Sb)N/GaAs band alignment Applied Physics Letters. 105. DOI: 10.1063/1.4896781  0.347
2014 Huang S, Kim SJ, Pan XQ, Goldman RS. Origins of interlayer formation and misfit dislocation displacement in the vicinity of InAs/GaAs quantum dots Applied Physics Letters. 105. DOI: 10.1063/1.4891330  0.477
2014 Kang M, Beskin I, Al-Heji AA, Shende O, Huang S, Jeon S, Goldman RS. Evolution of ion-induced nanoparticle arrays on GaAs surfaces Applied Physics Letters. 104. DOI: 10.1063/1.4874329  0.456
2014 Kang M, Wu JH, Ye W, Jiang Y, Robb EA, Chen C, Goldman RS. Formation and evolution of ripples on ion-irradiated semiconductor surfaces Applied Physics Letters. 104. DOI: 10.1063/1.4863471  0.5
2013 Walrath JC, Lin YH, Pipe KP, Goldman RS. Quantifying the local Seebeck coefficient with scanning thermoelectric microscopy Applied Physics Letters. 103. DOI: 10.1063/1.4829755  0.321
2013 Huang S, Kim SJ, Levy R, Pan XQ, Goldman RS. Mechanisms of InAs/GaAs quantum dot formation during annealing of in islands Applied Physics Letters. 103. DOI: 10.1063/1.4822052  0.451
2013 Kang M, Al-Heji AA, Lee JE, Saucer TW, Jeon S, Wu JH, Zhao L, Katzenstein AL, Sofferman DL, Sih V, Goldman RS. Ga nanoparticle-enhanced photoluminescence of GaAs Applied Physics Letters. 103. DOI: 10.1063/1.4819841  0.487
2013 Zech ES, Chang AS, Martin AJ, Canniff JC, Lin YH, Millunchick JM, Goldman RS. Influence of GaAs surface termination on GaSb/GaAs quantum dot structure and band offsets Applied Physics Letters. 103. DOI: 10.1063/1.4818270  0.462
2013 Kang M, Wu JH, Sofferman DL, Beskin I, Chen HY, Thornton K, Goldman RS. Origins of ion irradiation-induced Ga nanoparticle motion on GaAs surfaces Applied Physics Letters. 103. DOI: 10.1063/1.4818154  0.471
2013 Feldberg N, Aldous JD, Linhart WM, Phillips LJ, Durose K, Stampe PA, Kennedy RJ, Scanlon DO, Vardar G, Field RL, Jen TY, Goldman RS, Veal TD, Durbin SM. Growth, disorder, and physical properties of ZnSnN2 Applied Physics Letters. 103. DOI: 10.1063/1.4816438  0.321
2013 Warren MV, Canniff JC, Chi H, Morag E, Naab F, Stoica VA, Clarke R, Uher C, Goldman RS. Influence of embedded indium nanocrystals on GaAs thermoelectric properties Journal of Applied Physics. 114. DOI: 10.1063/1.4816087  0.348
2013 Canniff JC, Wood AW, Goldman RS. Formation mechanisms of embedded nanocrystals in SiNx Applied Physics Letters. 102. DOI: 10.1063/1.4810917  0.372
2013 Vardar G, Paleg SW, Warren MV, Kang M, Jeon S, Goldman RS. Mechanisms of droplet formation and Bi incorporation during molecular beam epitaxy of GaAsBi Applied Physics Letters. 102. DOI: 10.1063/1.4789369  0.521
2012 Kang M, Wu JH, Huang S, Warren MV, Jiang Y, Robb EA, Goldman RS. Universal mechanism for ion-induced nanostructure formation on III-V compound semiconductor surfaces Applied Physics Letters. 101. DOI: 10.1063/1.4742863  0.463
2012 Kang M, Saucer TW, Warren MV, Wu JH, Sun H, Sih V, Goldman RS. Surface plasmon resonances of Ga nanoparticle arrays Applied Physics Letters. 101. DOI: 10.1063/1.4742328  0.455
2012 Wood AW, Collino RR, Wang PT, Wang YQ, Goldman RS. Formation and transformation of embedded GaN nanocrystals Applied Physics Letters. 100. DOI: 10.1063/1.4714918  0.785
2012 Warren MV, Wood AW, Canniff JC, Naab F, Uher C, Goldman RS. Evolution of structural and thermoelectric properties of indium-ion-implanted epitaxial GaAs Applied Physics Letters. 100. DOI: 10.1063/1.3687912  0.369
2012 Wu JH, Goldman RS. Mechanisms of nanorod growth on focused-ion-beam-irradiated semiconductor surfaces: Role of redeposition Applied Physics Letters. 100. DOI: 10.1063/1.3675641  0.372
2011 Collino RR, Wood AW, Estrada NM, Dick BB, Ro HW, Soles CL, Wang YQ, Thouless MD, Goldman RS. Formation and transfer of GaAsN nanostructure layers Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29. DOI: 10.1116/1.3630120  0.781
2011 Wood AW, Collino RR, Cardozo BL, Naab F, Wang YQ, Goldman RS. Formation mechanisms of spatially-directed zincblende gallium nitride nanocrystals Journal of Applied Physics. 110. DOI: 10.1063/1.3665122  0.794
2011 Huang S, Semichaevsky AV, Webster L, Johnson HT, Goldman RS. Influence of wetting layers and quantum dot size distribution on intermediate band formation in InAs/GaAs superlattices Journal of Applied Physics. 110. DOI: 10.1063/1.3631785  0.441
2011 Wood AW, Weng X, Wang YQ, Goldman RS. Formation mechanisms of embedded wurtzite and zincblende indium nitride nanocrystals Applied Physics Letters. 99. DOI: 10.1063/1.3617464  0.582
2011 Dasika VD, Semichaevsky AV, Petropoulos JP, Dibbern JC, Dangelewicz AM, Holub M, Bhattacharya PK, Zide JMO, Johnson HT, Goldman RS. Influence of Mn dopants on InAs/GaAs quantum dot electronic states Applied Physics Letters. 98. DOI: 10.1063/1.3567510  0.782
2011 Kumah DP, Wu JH, Husseini NS, Dasika VD, Goldman RS, Yacoby Y, Clarke R. Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAs Applied Physics Letters. 98. DOI: 10.1063/1.3535984  0.797
2011 Semichaevsky AV, Goldman RS, Johnson HT. Linking computational and experimental studies of III-V quantum dots for optoelectronics and photovoltaics Jom. 63: 20-26. DOI: 10.1007/S11837-011-0153-8  0.432
2010 Dannecker T, Jin Y, Cheng H, Gorman CF, Buckeridge J, Uher C, Fahy S, Kurdak C, Goldman RS. Nitrogen composition dependence of electron effective mass in GaAs 1-xNx Physical Review B - Condensed Matter and Materials Physics. 82. DOI: 10.1103/Physrevb.82.125203  0.328
2009 Dasika VD, Song JD, Choi WJ, Cho NK, Lee JI, Goldman RS. Influence of alloy buffer and capping layers on InAs/GaAs quantum dot formation Applied Physics Letters. 95. DOI: 10.1063/1.3243688  0.788
2009 Wu JH, Ye W, Cardozo BL, Saltzman D, Sun K, Sun H, Mansfield JF, Goldman RS. Formation and coarsening of Ga droplets on focused-ion-beam irradiated GaAs surfaces Applied Physics Letters. 95. DOI: 10.1063/1.3229889  0.37
2009 Collino RR, Dick BB, Naab F, Wang YQ, Thouless MD, Goldman RS. Blister formation in ion-implanted GaAs: Role of diffusivity Applied Physics Letters. 95. DOI: 10.1063/1.3224199  0.775
2009 Jin Y, He Y, Cheng H, Jock RM, Dannecker T, Reason M, Mintairov AM, Kurdak C, Merz JL, Goldman RS. Influence of Si–N complexes on the electronic properties of GaAsN alloys Applied Physics Letters. 95: 92109. DOI: 10.1063/1.3198207  0.338
2009 Jin Y, Jock RM, Cheng H, He Y, Mintarov AM, Wang Y, Kurdak C, Merz JL, Goldman RS. Influence of N interstitials on the electronic properties of GaAsN alloys Applied Physics Letters. 95. DOI: 10.1063/1.3187915  0.32
2009 Dasika VD, Goldman RS, Song JD, Choi WJ, Cho NK, Lee JI. Nanometer-scale measurements of electronic states in InAs/GaAs quantum dots Journal of Applied Physics. 106. DOI: 10.1063/1.3158560  0.793
2009 Yadav A, Pipe KP, Ye W, Goldman RS. Thermoelectric properties of quantum dot chains Journal of Applied Physics. 105. DOI: 10.1063/1.3094029  0.408
2008 Sheu YM, Lee SH, Wahlstrand JK, Walko DA, Landahl EC, Arms DA, Reason M, Goldman RS, Reis DA. Thermal transport in a semiconductor heterostructure measured by time-resolved x-ray diffraction Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.045317  0.353
2008 Reason M, Jin Y, McKay HA, Mangan N, Mao D, Goldman RS, Bai X, Kurdak C. Erratum: ``Influence of N on the electronic properties of GaAsN alloy films and heterostructures'' [J. Appl. Phys. 102, 103710 (2007)] Journal of Applied Physics. 103: 19902. DOI: 10.1063/1.2832754  0.313
2007 Tabbal M, Kim T, Warrender JM, Aziz MJ, Cardozo BL, Goldman RS. Formation of single crystal sulfur supersaturated silicon based junctions by pulsed laser melting Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1847-1852. DOI: 10.1116/1.2796184  0.31
2007 Reason M, Jin Y, McKay HA, Mangan N, Mao D, Goldman RS, Bai X, Kurdak C. Influence of N on the electronic properties of GaAsN alloy films and heterostructures Journal of Applied Physics. 102. DOI: 10.1063/1.2798629  0.375
2007 Reason M, Rudawski NG, McKay HA, Weng X, Ye W, Goldman RS. Mechanisms of GaAsN growth: Surface and step-edge diffusion Journal of Applied Physics. 101. DOI: 10.1063/1.2719275  0.396
2006 Lu JQ, Johnson HT, Dasika VD, Goldman RS. Moments-based tight-binding calculations of local electronic structure in InAs/GaAs quantum dots for comparison to experimental measurements Applied Physics Letters. 88: 1-3. DOI: 10.1063/1.2171473  0.785
2005 Lee SH, Cavalieri AL, Fritz DM, Swan MC, Hegde RS, Reason M, Goldman RS, Reis DA. Generation and propagation of a picosecond acoustic pulse at a buried interface: time-resolved x-ray diffraction measurements. Physical Review Letters. 95: 246104. PMID 16384400 DOI: 10.1103/Physrevlett.95.246104  0.33
2005 Ye W, Hanson S, Reason M, Weng X, Goldman RS. Control of InAsGaAs quantum dot density and alignment using modified buffer layers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1736-1740. DOI: 10.1116/1.1949215  0.459
2005 Reason M, Weng X, Ye W, Dettling D, Hanson S, Obeidi G, Goldman RS. Stress evolution in GaAsN alloy films Journal of Applied Physics. 97. DOI: 10.1063/1.1900289  0.337
2005 Weng X, Ye W, Clarke SJ, Goldman RS, Rotberg V, Daniel A, Clarke R. Matrix-seeded growth of nitride semiconductor nanostructures using ion beams Journal of Applied Physics. 97. DOI: 10.1063/1.1847726  0.369
2005 Gleason JN, Hjelmstad ME, Dasika VD, Goldman RS, Fathpour S, Charkrabarti S, Bhattacharya PK. Nanometer-scale studies of point defect distributions in GaMnAs alloys Applied Physics Letters. 86: 011911-1-011911-3. DOI: 10.1063/1.1843284  0.751
2005 Weng X, Rudawski NG, Wang PT, Goldman RS, Partin DL, Heremans J. Effects of buffer layers on the structural and electronic properties of InSb films Journal of Applied Physics. 97. DOI: 10.1063/1.1841466  0.375
2004 Weng X, Ye W, Goldman RS, Mabon JC. Formation and blistering of GaAsN nanostructure layers Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 989-992. DOI: 10.1116/1.1715030  0.436
2004 Shin B, Chen W, Goldman RS, Song JD, Kim JM, Lee YT. Initiation and evolution of phase separation in GaP/InP short-period superlattices Journal of Vacuum Science & Technology B. 22: 216-219. DOI: 10.1116/1.1642642  0.334
2004 Goldman RS. Nanoprobing of semiconductor heterointerfaces: Quantum dots, alloys and diffusion Journal of Physics D: Applied Physics. 37. DOI: 10.1088/0022-3727/37/13/R01  0.458
2004 Reason M, McKay HA, Ye W, Hanson S, Goldman RS, Rotberg V. Mechanisms of nitrogen incorporation in GaAsN alloys Applied Physics Letters. 85: 1692-1694. DOI: 10.1063/1.1789237  0.306
2003 Chen W, Shin B, Goldman RS, Stiff A, Bhattacharya PK. Mechanisms of lateral ordering of InAs/GaAs quantum dot superlattices Journal of Vacuum Science & Technology B. 21: 1920-1923. DOI: 10.1116/1.1588645  0.446
2003 Goldman RS, Shin B, Lita B. Mechanisms of semiconductor nanostructure formation Physica Status Solidi (a) Applied Research. 195: 151-158. DOI: 10.1002/Pssa.200306280  0.803
2003 Chen W, Shin B, Goldman RS, Stiff A, Bhattacharya PK. Mechanisms of lateral ordering of InAs/GaAs quantum dot superlattices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1920-1923.  0.302
2002 Weng X, Clarke SJ, Ye W, Kumar S, Goldman RS, Daniel A, Clarke R, Holt J, Sipowska J, Francis A, Rotberg V. Evolution of structural and optical properties of ion-beam synthesized GaAsN nanostructures Journal of Applied Physics. 92: 4012-4018. DOI: 10.1063/1.1504177  0.4
2002 Shin B, Lita B, Goldman RS, Phillips JD, Bhattacharya PK. Lateral indium-indium pair correlations within the wetting layers of buried InAs/GaAs quantum dots Applied Physics Letters. 81: 1423-1425. DOI: 10.1063/1.1501760  0.803
2002 Shin B, Lin A, Lappo K, Goldman RS, Hanna MC, Francoeur S, Norman AG, Mascarenhas A. Initiation and evolution of phase separation in heteroepitaxial InAlAs films Applied Physics Letters. 80: 3292-3294. DOI: 10.1063/1.1476386  0.337
2000 Krishna S, Sabarinathan J, Linder K, Bhattacharya P, Lita B, Goldman RS. Growth of high density self-organized (In,Ga)As quantum dots with ultranarrow photoluminescence linewidths using buried In(Ga,Al)As stressor dots Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 18: 1502-1506. DOI: 10.1116/1.591413  0.809
2000 Weng X, Goldman RS, Partin DL, Heremans JP. Evolution of structural and electronic properties of highly mismatched InSb films Journal of Applied Physics. 88: 6278-6286. DOI: 10.1063/1.1324702  0.386
2000 Lita B, Beck M, Goldman RS, Seryogin GA, Nikishin SA, Temkin H. Structural and compositional variations in ZnSnP2/GaAs superlattices Applied Physics Letters. 77: 2894-2896. DOI: 10.1063/1.1320463  0.444
2000 Lita B, Goldman RS, Phillips JD, Bhattacharya PK. Interdiffusion, segregation, and dissolution in InAs/GaAs quantum dot superlattices Surface Review and Letters. 7: 539-545. DOI: 10.1016/S0218-625X(00)00063-4  0.809
2000 Lita B, Beck M, Goldman RS, Seryogin GA, Nikishin SA, Temkin H. Structural and compositional variations in ZnSnP2/GaAs superlattices Applied Physics Letters. 77: 2894-2896.  0.804
1999 Lita B, Ghaisas S, Goldman RS, Melloch MR. Nanometer-scale studies of Al-Ga interdiffusion and As precipitate coarsening in nonstoichiometric AlAs/GaAs superlattices Applied Physics Letters. 75: 4082-4084. DOI: 10.1063/1.125543  0.809
1999 Lita B, Goldman RS, Phillips JD, Bhattacharya PK. Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dots Applied Physics Letters. 75: 2797-2799. DOI: 10.1063/1.125153  0.487
1999 Lita B, Goldman RS, Phillips JD, Bhattacharya PK. Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots Applied Physics Letters. 74: 2824-2826. DOI: 10.1063/1.124026  0.451
1999 Lita B, Goldman RS, Phillips JD, Bhattacharya PK. Interdiffusion and surface segregation in stacked self-assembled InAs/GaAs quantum dots Applied Physics Letters. 75: 2797-2799.  0.795
1999 Lita B, Goldman RS, Phillips JD, Bhattacharya PK. Nanometer-scale studies of vertical organization and evolution of stacked self-assembled InAs/GaAs quantum dots Applied Physics Letters. 74: 2824-2826.  0.791
1998 Goldman RS, Kavanagh KL, Wieder HH, Ehrlich SN, Feenstra RM. Effects of GaAs substrate misorientation on strain relaxation in InxGa1−xAs films and multilayers Journal of Applied Physics. 83: 5137-5149. DOI: 10.1063/1.367331  0.577
1998 Chen H, Feenstra RM, Goldman RS, Silfvenius C, Landgren G. Strain variations in InGaAsP/InGaP superlattices studied by scanning probe microscopy Applied Physics Letters. 72: 1727-1729. DOI: 10.1063/1.121165  0.574
1998 Goldman RS, Kavanagh KL, Wieder HH, Ehrlich SN, Feenstra RM. Effects of GaAs substrate misorientation on strain relaxation in InxGa1-xAs films and multilayers Journal of Applied Physics. 83: 5137-5149.  0.683
1997 Goldman RS, Feenstra RM, Silfvenius C, Stålnacke B, Landgren G. Morphological and compositional variations in strain-compensated InGaAsP/InGaP superlattices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 15: 1027-1033. DOI: 10.1116/1.589387  0.621
1997 Kavanagh KL, Goldman RS, Lavoie C, Leduc B, Pinnington T, Tiedje T, Klug D, Tse J. In situ detection of misfit dislocations by light scattering Journal of Crystal Growth. 174: 550-557. DOI: 10.1016/S0022-0248(97)00032-8  0.37
1997 Goldman RS, Feenstra RM, Briner BG, O'Steen ML, Hauenstein RJ. Nanometer-scale studies of nitride/arsenide heterostructures produced by nitrogen plasma exposure of GaAs Journal of Electronic Materials. 26: 1342-1348. DOI: 10.1007/S11664-997-0082-Z  0.602
1997 Kavanagh KL, Goldman RS, Lavoie C, Leduc B, Pinnington T, Tiedje T, Klug D, Tse J. In situ detection of misfit dislocations by light scattering Journal of Crystal Growth. 174: 550-557.  0.525
1996 Goldman RS, Kavanagh KL, Wieder HH, Ehrlich SN. Modulation‐doped In0.53Ga0.47As/In0.52Al0.48As heterostructures grown on GaAs substrates using step‐graded InxGa1−xAs buffers Journal of Vacuum Science & Technology B. 14: 3035-3039. DOI: 10.1116/1.589060  0.363
1996 Goldman RS, Kavanagh KL, Wieder HH, Bobbins VM, Ehrlich SN, Feenstra RM. Correlation of buffer strain relaxation modes with transport properties of two-dimensional electron gases Journal of Applied Physics. 80: 6849-6854. DOI: 10.1063/1.363751  0.747
1996 Goldman RS, Feenstra RM, Briner BG, O'Steen ML, Hauenstein RJ. Atomic-scale structure and electronic properties of GaN/GaAs superlattices Applied Physics Letters. 69: 3698-3700. DOI: 10.1063/1.117193  0.609
1995 Rammohan K, Tang Y, Rich DH, Goldman RS, Wieder HH, Kavanagh KL. Relaxation-induced polarized luminescence from InxGa1-xAs films grown on GaAs(001). Physical Review. B, Condensed Matter. 51: 5033-5037. PMID 9979376 DOI: 10.1103/Physrevb.51.5033  0.595
1995 Ring KM, Shapiro AL, Deng F, Goldman RS, Spada F, Hellman F, Cheeks TL, Kavanagh KL, Suzuki T. Structural and magnetic characterization of Bi-substituted garnet on Si and GaAs Materials Research Society Symposium - Proceedings. 384: 41-46. DOI: 10.1557/Proc-384-41  0.57
1995 Goldman RS, Wieder HH, Kavanagh KL. Effects of substrate misorientation direction on strain relaxation at InGaAs/GaAs(001) interfaces Materials Research Society Symposium - Proceedings. 379: 21-26. DOI: 10.1557/Proc-379-21  0.597
1995 Lavoie C, Haveman B, Nodwell E, Pinnington T, Tiedje T, Goldman RS, Kavanagh KL, Hutter JL, Bechhoefer J. Light scattering study of the evolution of the surface morphology during growth of InGaAs on GaAs Materials Research Society Symposium - Proceedings. 375: 193-198. DOI: 10.1557/Proc-375-193  0.334
1995 Wieder HH, Goldman RS, Chen J, Young AP. Gate-controlled modulation of charge transport in long-channel, δ-doped, heterojunction hall-bar structures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 1853-1858. DOI: 10.1116/1.587824  0.568
1995 Rich DH, Rammohan K, Tang Y, Lin HT, Goldman RS, Wieder HH, Kavanagh KL. Influence of GaAs(001) substrate misorientation towards {111} on the optical properties of InxGa1-xAs/GaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 1766-1772. DOI: 10.1116/1.587810  0.698
1995 Goldman RS, Wieder HH, Kavanagh KL. Correlation of anisotropic strain relaxation with substrate misorientation direction at InGaAs/GaAs(001) interfaces Applied Physics Letters. 67: 344-346. DOI: 10.1063/1.115439  0.58
1995 Lavoie C, Pinnington T, Nodwell E, Tiedje T, Goldman RS, Kavanagh KL, Hutter JL. Relationship between surface morphology and strain relaxation during growth of InGaAs strained layers Applied Physics Letters. 67: 3744. DOI: 10.1063/1.115369  0.411
1995 Rammohan K, Rich DH, Goldman RS, Chen J, Wieder HH, Kavanagh KL. Study of μm-scale spatial variations in strain of a compositionally step-graded InxGa1-xAs/GaAs(001) heterostructure Applied Physics Letters. 869. DOI: 10.1063/1.113414  0.611
1994 Goldman RS, Rammohan K, Raisanen A, Goorsky M, Brillson LJ, Rich DH, Wieder HH, Kavanagh KL. Anisotropic structural and electronic properties of InGaAs/GaAs heterojunctions Mrs Proceedings. 340: 349-354. DOI: 10.1557/Proc-340-349  0.359
1994 Raisanen A, Brillson LJ, Goldman RS, Kavanaqh KL, Wieder HH. Strain relaxation induced deep levels in In1-xGaxAs thin films and SiH4 Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 12: 1050-1053. DOI: 10.1116/1.579283  0.643
1994 Goldman RS, Wieder HH, Kavanagh KL, Rammohan K, Rich DH. Anisotropic structural, electronic, and optical properties of InGaAs grown by molecular beam epitaxy on misoriented substrates Applied Physics Letters. 65: 1424-1426. DOI: 10.1063/1.112071  0.71
1994 Raisanen A, Brillson LJ, Goldman RS, Kavanagh KL, Wieder HH. Optical detection of misfit dislocation-induced deep levels at InGaAs/GaAs heterojunctions Applied Physics Letters. 64: 3572-3574. DOI: 10.1063/1.111201  0.676
1994 Raisanen A, Brillson LJ, Goldman RS, Kavanagh KL, Wieder H. Dislocation-Induced deep level states in In0.08Ga0.92As/GaAs heterostructures Journal of Electronic Materials. 23: 929-933. DOI: 10.1007/Bf02655367  0.6
1994 Goldman RS, Wieder HH, Kavanagh KL. Correlation of anisotropic strain relaxation with substrate misorientation direction at InGaAs/GaAs(001) interfaces<AUTHGRP> Applied Physics Letters. 67: 341.  0.567
1994 Goldman RS, Rammohan K, Raisanen A, Goorsky M, Brillson LJ, Rich DH, Wieder HH, Kavanagh KL. Anisotropic structural and electronic properties of InGaAs/GaAs heterojunctions Materials Research Society Symposium - Proceedings. 340: 349-354.  0.549
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