| Year |
Citation |
Score |
| 2022 |
Jeong H, Seebauer EG. Strong Isotopic Fractionation of Oxygen in TiO Obtained by Surface-Enhanced Solid-State Diffusion. The Journal of Physical Chemistry Letters. 13: 9841-9847. PMID 36250704 DOI: 10.1021/acs.jpclett.2c02490 |
0.318 |
|
| 2022 |
Jeong H, Ertekin E, Seebauer EG. Surface-Based Post-synthesis Manipulation of Point Defects in Metal Oxides Using Liquid Water. Acs Applied Materials & Interfaces. PMID 35849641 DOI: 10.1021/acsami.2c07672 |
0.337 |
|
| 2021 |
Jeong H, Li M, Kuang J, Ertekin E, Seebauer EG. Mechanism of creation and destruction of oxygen interstitial atoms by nonpolar zinc oxide(101[combining macron]0) surfaces. Physical Chemistry Chemical Physics : Pccp. PMID 34318811 DOI: 10.1039/d1cp01204e |
0.368 |
|
| 2020 |
Jeong H, Seebauer EG, Ertekin E. Fermi level dependence of gas-solid oxygen defect exchange mechanism on TiO (110) by first-principles calculations. The Journal of Chemical Physics. 153: 124710. PMID 33003753 DOI: 10.1063/5.0023180 |
0.308 |
|
| 2019 |
Gilliard-AbdulAziz KL, Seebauer EG. Elucidating the reaction and diffusion network of oxygen interstitial atoms near a TiO2(1 1 0) surface Applied Surface Science. 470: 854-860. DOI: 10.1016/J.Apsusc.2018.11.123 |
0.471 |
|
| 2018 |
Jeong H, Seebauer EG, Ertekin E. First-principles description of oxygen self-diffusion in rutile TiO: assessment of uncertainties due to enthalpy and entropy contributions. Physical Chemistry Chemical Physics : Pccp. PMID 29911702 DOI: 10.1039/C8Cp02741B |
0.431 |
|
| 2018 |
Gilliard-AbdulAziz KL, Seebauer EG. Microkinetic model for reaction and diffusion of titanium interstitial atoms near a TiO2(110) surface. Physical Chemistry Chemical Physics : Pccp. PMID 29376544 DOI: 10.1039/C7Cp07802A |
0.495 |
|
| 2018 |
Nandakumar NK, Seebauer EG. Manipulating Reaction Rates of Metal-Oxide Heterogeneous Catalysts via Semiconductor Heterojunctions Journal of Physical Chemistry C. 122: 16655-16663. DOI: 10.1021/Acs.Jpcc.8B00712 |
0.785 |
|
| 2018 |
Barlaz DE, Seebauer EG. Photocarrier Transport Mechanisms in Amorphous and Epitaxial TiO2/SrRuO3 Heterojunction Photocatalysts Journal of Physical Chemistry C. 122: 15688-15695. DOI: 10.1021/Acs.Jpcc.7B12659 |
0.382 |
|
| 2018 |
Li M, Seebauer EG. Microkinetic Model for Oxygen Interstitial Injection from the ZnO(0001) Surface into the Bulk The Journal of Physical Chemistry C. 122: 2127-2136. DOI: 10.1021/Acs.Jpcc.7B09962 |
0.478 |
|
| 2017 |
Gilliard KL, Seebauer E. Manipulation of Native Point Defect Behavior in Rutile TiO2 via Surfaces and Extended Defects. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 28862156 DOI: 10.1088/1361-648X/aa89ba |
0.358 |
|
| 2017 |
Gunasooriya GTKK, Seebauer EG, Saeys M. Ethylene Hydrogenation over Pt/TiO2: A Charge-Sensitive Reaction Acs Catalysis. 7: 1966-1970. DOI: 10.1021/Acscatal.6B02906 |
0.323 |
|
| 2017 |
Gorai P, Seebauer EG. Electric field-driven point defect pile-up near ZnO polar surfaces Solid State Ionics. 301: 95-98. DOI: 10.1016/J.Ssi.2017.01.015 |
0.711 |
|
| 2017 |
Li M, Seebauer EG. Coverage-dependent adsorption thermodynamics of oxygen on ZnO(0001) Applied Surface Science. 397: 220-225. DOI: 10.1016/J.Apsusc.2016.11.148 |
0.343 |
|
| 2016 |
Gorai P, Seebauer EG, Ertekin E. Mechanism and energetics of O and O2 adsorption on polar and non-polar ZnO surfaces. The Journal of Chemical Physics. 144: 184708. PMID 27179501 DOI: 10.1063/1.4948939 |
0.643 |
|
| 2016 |
Barlaz DE, Seebauer EG. Solid phase epitaxial regrowth of (001) anatase titanium dioxide Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 34. DOI: 10.1116/1.4941446 |
0.353 |
|
| 2016 |
Gorai P, Ertekin E, Seebauer EG. Surface-assisted defect engineering of point defects in ZnO Applied Physics Letters. 108. DOI: 10.1063/1.4953878 |
0.716 |
|
| 2016 |
Li M, Seebauer EG. Surface-Based Control of Oxygen Interstitial Injection into ZnO via Submonolayer Sulfur Adsorption Journal of Physical Chemistry C. 120: 23675-23682. DOI: 10.1021/Acs.Jpcc.6B08487 |
0.411 |
|
| 2016 |
Nandakumar NK, Seebauer EG. Manipulating Surface Potentials of Metal Oxides Using Semiconductor Heterojunctions Journal of Physical Chemistry C. 120: 5486-5494. DOI: 10.1021/Acs.Jpcc.5B11657 |
0.789 |
|
| 2016 |
Sellers MCK, Seebauer EG. Persistent illumination-induced changes in polycrystalline TiO2 majority carrier concentration Materials Letters. 162: 20-23. DOI: 10.1016/J.Matlet.2015.09.106 |
0.329 |
|
| 2016 |
Li M, Seebauer EG. Defect engineering in semiconducting oxides: Control of ZnO surface potential via temperature and oxygen pressure Aiche Journal. 62: 500-507. DOI: 10.1002/Aic.15031 |
0.436 |
|
| 2015 |
Eitan Barlaz D, Seebauer EG. Manipulation of carrier concentration, crystallite size and density in polycrystalline anatase TiO2via amorphous-phase medium range atomic order Crystengcomm. 17: 2101-2109. DOI: 10.1039/C5Ce00048C |
0.345 |
|
| 2015 |
Ong SWD, Lin J, Seebauer EG. Control of Photoactivity over Polycrystalline Anatase TiO2 Thin Films via Surface Potential Journal of Physical Chemistry C. 119: 27060-27071. DOI: 10.1021/Acs.Jpcc.5B09272 |
0.429 |
|
| 2015 |
Pangan-Okimoto KM, Gorai P, Hollister AG, Seebauer EG. Model for oxygen interstitial injection from the rutile TiO<inf>2</inf>(110) surface into the bulk Journal of Physical Chemistry C. 119: 9955-9965. DOI: 10.1021/Acs.Jpcc.5B02009 |
0.817 |
|
| 2015 |
Ong SWD, Lin J, Seebauer EG. Control of methylene blue photo-oxidation rate over polycrystalline anatase TiO2 thin films via carrier concentration Journal of Physical Chemistry C. 119: 11662-11671. DOI: 10.1021/Acs.Jpcc.5B01852 |
0.38 |
|
| 2014 |
Seebauer EG. Defect engineering via surfaces for metal-oxide electronics Proceedings - 2014 Ieee 12th International Conference On Solid-State and Integrated Circuit Technology, Icsict 2014. DOI: 10.1109/ICSICT.2014.7021214 |
0.337 |
|
| 2014 |
Gorai P, Seebauer EG. Kinetic model for electric-field induced point defect redistribution near semiconductor surfaces Applied Physics Letters. 105. DOI: 10.1063/1.4890472 |
0.697 |
|
| 2014 |
Gorai P, Hollister AG, Pangan-Okimoto K, Seebauer EG. Kinetics of oxygen interstitial injection and lattice exchange in rutile TiO2 Applied Physics Letters. 104. DOI: 10.1063/1.4876916 |
0.811 |
|
| 2014 |
Nandakumar NK, Seebauer EG. Relating catalytic activity of d0 semiconducting metal oxides to the fermi level position Journal of Physical Chemistry C. 118: 6873-6881. DOI: 10.1021/Jp4127946 |
0.773 |
|
| 2014 |
Sellers MCK, Seebauer EG. Room temperature ferromagnetism in Mn-doped TiO2 nanopillar matrices Materials Letters. 114: 44-47. DOI: 10.1016/J.Matlet.2013.09.097 |
0.317 |
|
| 2014 |
Chua YPG, Gunasooriya GTKK, Saeys M, Seebauer EG. Controlling the CO oxidation rate over Pt/TiO2 catalysts by defect engineering of the TiO2 support Journal of Catalysis. 311: 306-313. DOI: 10.1016/J.Jcat.2013.12.007 |
0.365 |
|
| 2013 |
Kondratenko Y, Seebauer EG. Interface-mediated photostimulation effects on diffusion and activation of boron implanted into silicon Ecs Journal of Solid State Science and Technology. 2. DOI: 10.1149/2.018305Jss |
0.809 |
|
| 2013 |
Gorai P, Hollister AG, Seebauer EG. Electrostatic drift effects on near-surface defect distribution in TiO 2 Applied Physics Letters. 103. DOI: 10.1063/1.4824614 |
0.816 |
|
| 2013 |
Hollister AG, Gorai P, Seebauer EG. Surface-based manipulation of point defects in rutile TiO2 Applied Physics Letters. 102. DOI: 10.1063/1.4810073 |
0.807 |
|
| 2013 |
Sellers MCK, Seebauer EG. Investigation of nanostructured TiO2 surface and interface electric fields with photoreflectance spectroscopy Aiche Journal. 59: 1049-1055. DOI: 10.1002/Aic.13905 |
0.429 |
|
| 2012 |
Gorai P, Hollister AG, Seebauer EG. Measurement of defect-mediated oxygen self-diffusion in metal oxides Ecs Journal of Solid State Science and Technology. 1. DOI: 10.1149/2.011202Jss |
0.815 |
|
| 2012 |
Seebauer EG, Gorai P. Defect engineering at the nanoscale: Challenges and trends Ecs Transactions. 50: 291-302. DOI: 10.1149/05005.0291ecst |
0.687 |
|
| 2012 |
Gorai P, Kondratenko YV, Seebauer EG. Dependence of near-surface dopant pile-up on post-implant annealing conditions Aip Conference Proceedings. 1496: 253-256. DOI: 10.1063/1.4766536 |
0.698 |
|
| 2012 |
Gorai P, Kondratenko YV, Seebauer EG. Mechanism and kinetics of near-surface dopant pile-up during post-implant annealing Journal of Applied Physics. 111. DOI: 10.1063/1.4714556 |
0.795 |
|
| 2011 |
Sellers MCK, Seebauer EG. Manipulation of polycrystalline TiO 2 carrier concentration via electrically active native defects Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29. DOI: 10.1116/1.3635373 |
0.389 |
|
| 2011 |
Seebauer EG, Jung MYL, Kwok CTM, Vaidyanathan R, Kondratenko YV. Measurement of photostimulated self-diffusion in silicon Journal of Applied Physics. 109. DOI: 10.1063/1.3590710 |
0.806 |
|
| 2011 |
Vaidyanathan R, Felch S, Graoui H, Foad MA, Kondratenko Y, Seebauer EG. Nonthermal illumination effects on ultra-shallow junction formation Applied Physics Letters. 98. DOI: 10.1063/1.3571279 |
0.802 |
|
| 2011 |
Nandakumar NK, Seebauer EG. Low temperature chemical vapor deposition of nanocrystalline V 2O5 thin films Thin Solid Films. 519: 3663-3668. DOI: 10.1016/J.Tsf.2011.02.002 |
0.753 |
|
| 2011 |
Sellers MCK, Seebauer EG. Measurement method for carrier concentration in TiO2 via the Mott-Schottky approach Thin Solid Films. 519: 2103-2110. DOI: 10.1016/J.Tsf.2010.10.071 |
0.362 |
|
| 2011 |
Sellers MCK, Seebauer EG. Structural and magnetic properties of Mn-doped anatase TiO2 films synthesized by atomic layer deposition Applied Physics a: Materials Science and Processing. 104: 583-586. DOI: 10.1007/S00339-011-6308-1 |
0.305 |
|
| 2010 |
Chen K, Vaidyanathan R, Seebauer EG, Braatz RD. General expression for effective diffusivity of foreign atoms migrating via a fast intermediate Journal of Applied Physics. 107. DOI: 10.1063/1.3294479 |
0.725 |
|
| 2010 |
Dalton AS, Kondratenko YV, Seebauer EG. Diffusion mechanisms on amorphous silicon surfaces Chemical Engineering Science. 65: 2172-2176. DOI: 10.1016/J.Ces.2009.12.018 |
0.789 |
|
| 2010 |
Kondratenko YV, Seebauer EG. Directed self-assembly by photostimulation of an amorphous semiconductor surface Aiche Journal. 56: 3206-3211. DOI: 10.1002/Aic.12229 |
0.776 |
|
| 2010 |
Kwok CTM, Braatz RD, Paul S, Lerch W, Seebauer EG. An improved model for boron diffusion and activation in silicon Aiche Journal. 56: 515-521. DOI: 10.1002/Aic.11984 |
0.598 |
|
| 2009 |
Kwok CTM, Braatz RD, Paul S, Lerch W, Seebauer EG. Mechanistic benefits of millisecond annealing for diffusion and activation of boron in silicon Journal of Applied Physics. 105. DOI: 10.1063/1.3079524 |
0.604 |
|
| 2008 |
Seebauer EG. Surfaces and interfaces for controlled defect engineering International Conference On Solid-State and Integrated Circuits Technology Proceedings, Icsict. 773-776. DOI: 10.1557/Proc-1070-E01-07 |
0.445 |
|
| 2008 |
Seebauer EG, Kwok CTM, Vaidyanathan R, Kondratenko YV, Yeong SH, Srinivasan MP, Colombeau B, Chan L. Defect engineering for ultrashallow junctions using surfaces Ecs Transactions. 13: 55-62. DOI: 10.1149/1.2911485 |
0.357 |
|
| 2008 |
Kwok CTM, Dev K, Seebauer EG, Braatz RD. Maximum a posteriori estimation of activation energies that control silicon self-diffusion Automatica. 44: 2241-2247. DOI: 10.1016/J.Automatica.2008.01.020 |
0.588 |
|
| 2007 |
Seebauer EG. Defect engineering in semiconductors through adsorption and photoexcitation Icsict-2006: 2006 8th International Conference On Solid-State and Integrated Circuit Technology, Proceedings. 450-453. DOI: 10.1109/ICSICT.2006.306298 |
0.391 |
|
| 2007 |
Vaidyanathan R, Jung MYL, Seebauer EG. Mechanism and energetics of self-interstitial formation and diffusion in silicon Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.195209 |
0.702 |
|
| 2007 |
Yeong SH, Srinivasan MP, Colombeau B, Chan L, Akkipeddi R, Kwok CTM, Vaidyanathan R, Seebauer EG. Defect engineering by surface chemical state in boron-doped preamorphized silicon Applied Physics Letters. 91. DOI: 10.1063/1.2780080 |
0.678 |
|
| 2007 |
Wang Z, Seebauer EG. Temperature-dependent energy thresholds for ion-stimulated defect formation in solids: Effects of ion mass and adsorbate-substrate pairing Surface Science. 601: 2453-2458. DOI: 10.1016/J.Susc.2007.04.159 |
0.524 |
|
| 2007 |
Dalton AS, Seebauer EG. An improved theory for temperature-dependent Arrhenius parameters in mesoscale surface diffusion Surface Science. 601: 728-734. DOI: 10.1016/J.Susc.2006.10.041 |
0.45 |
|
| 2007 |
Hollister AG, Vaidyanathan R, Seebauer EG. Modeling and engineering of defects in TiO2 for catalysis 2007 Aiche Annual Meeting. |
0.312 |
|
| 2006 |
Seebauer EG, Dev K, Jung MY, Vaidyanathan R, Kwok CT, Ager JW, Haller EE, Braatz RD. Control of defect concentrations within a semiconductor through adsorption. Physical Review Letters. 97: 055503. PMID 17026112 DOI: 10.1103/Physrevlett.97.055503 |
0.726 |
|
| 2006 |
Zhang X, Yu M, Kwok CTM, Vaidyanathan R, Braatz RD, Seebauer EG. Precursor mechanism for interaction of bulk interstitial atoms with Si(100) Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.235301 |
0.753 |
|
| 2006 |
Vaidyanathan R, Seebauer EG, Graoui H, Foad MA. Influence of surface adsorption in improving ultrashallow junction formation Applied Physics Letters. 89. DOI: 10.1063/1.2360917 |
0.67 |
|
| 2006 |
Subramanian V, Ni Z, Seebauer EG, Masel RI. Synthesis of high-temperature titania-alumina supports Industrial and Engineering Chemistry Research. 45: 3815-3820. DOI: 10.1021/Ie051175Q |
0.325 |
|
| 2006 |
Braatz RD, Alkire RC, Seebauer E, Rusli E, Gunawan R, Drews TO, Li X, He Y. Perspectives on the design and control of multiscale systems Journal of Process Control. 16: 193-204. DOI: 10.1016/S1474-6670(17)31806-2 |
0.632 |
|
| 2006 |
Seebauer EG, Kratzer MC. Charged point defects in semiconductors Materials Science and Engineering R: Reports. 55: 57-149. DOI: 10.1016/J.Mser.2006.01.002 |
0.464 |
|
| 2006 |
Braatz RD, Alkire RC, Seebauer EG, Drews TO, Rusli E, Karulkar M, Xue F, Qin Y, Jung MYL, Gunawan R. A multiscale systems approach to microelectronic processes Computers and Chemical Engineering. 30: 1643-1656. DOI: 10.1016/J.Compchemeng.2006.05.022 |
0.623 |
|
| 2006 |
Vaidyanathan R, Jung MYL, Braatz RD, Seebauer EG. Measurement of defect-mediated diffusion: The case of silicon self-diffusion Aiche Journal. 52: 366-370. DOI: 10.1002/Aic.10587 |
0.744 |
|
| 2006 |
Dev K, Kwok CTM, Vaidyanathan R, Braatz RD, Seebauer EG. Controlling dopant diffusion and activation through surface chemistry Aip Conference Proceedings. 866: 50-53. |
0.325 |
|
| 2005 |
Wang Z, Seebauer EG. Temperature-dependent energy thresholds for ion-stimulated defect formation in solids. Physical Review Letters. 95: 015501. PMID 16090628 DOI: 10.1103/Physrevlett.95.015501 |
0.529 |
|
| 2005 |
Kwok CTM, Dev K, Braatz RD, Seebauer EG. A method for quantifying annihilation rates of bulk point defects at surfaces Journal of Applied Physics. 98. DOI: 10.1063/1.1946195 |
0.614 |
|
| 2005 |
Jung MYL, Kwok CTM, Braatz RD, Seebauer EG. Interstitial charge states in boron-implanted silicon Journal of Applied Physics. 97. DOI: 10.1063/1.1829787 |
0.598 |
|
| 2005 |
Dev K, Seebauer EG. Band bending at the Si(1 0 0)-Si3N4 interface studied by photoreflectance spectroscopy Surface Science. 583: 80-87. DOI: 10.1016/J.Susc.2005.03.026 |
0.347 |
|
| 2005 |
Seebauer EG. Using surface chemistry for defect engineering in ultrashallow junction formation Proceedings - Electrochemical Society. 33-42. |
0.321 |
|
| 2004 |
Jung MYL, Gunawan R, Braatz RD, Seebauer EG. A simplified picture for transient enhanced diffusion of boron in silicon Journal of the Electrochemical Society. 151. DOI: 10.1149/1.1628238 |
0.709 |
|
| 2004 |
Jung MYL, Gunawan R, Braatz RD, Seebauer EG. Effect of near-surface band bending on dopant profiles in ion-implanted silicon Journal of Applied Physics. 95: 1134-1140. DOI: 10.1063/1.1638621 |
0.697 |
|
| 2004 |
Gunawan R, Jung M, Seebauer E, Braatz R. Optimal Control of Transient Enhanced Diffusion Ifac Proceedings Volumes. 37: 547-552. DOI: 10.1016/S1474-6670(17)38789-X |
0.67 |
|
| 2004 |
Braatz R, Alkire R, Seebauer E, Rusli E, Gunawan R, Drews T, Li X, He Y. Perspectives on the Design and Control of Multiscale Systems Ifac Proceedings Volumes. 37: 155-166. DOI: 10.1016/S1474-6670(17)31806-2 |
0.57 |
|
| 2004 |
Tey SH, Prasad K, Tee KC, Chan LH, Seebauer EG. Non-linear optical studies of copper diffusion at surfaces and interfaces of microelectronic interconnect structures Thin Solid Films. 466: 217-224. DOI: 10.1016/J.Tsf.2004.01.113 |
0.452 |
|
| 2004 |
Dev K, Seebauer EG. Vacancy charging on Si(111)-"1 × 1" investigated by density functional theory Surface Science. 572: 483-489. DOI: 10.1016/J.Susc.2004.09.031 |
0.381 |
|
| 2004 |
Dalton AS, Seebauer EG. Structure and mobility on amorphous silicon surfaces Surface Science. 550: 140-148. DOI: 10.1016/J.Susc.2003.12.033 |
0.444 |
|
| 2004 |
Dev K, Seebauer EG. Band bending at the Si(1 1 1)-SiO2 interface induced by low-energy ion bombardment Surface Science. 550: 185-191. DOI: 10.1016/J.Susc.2003.12.018 |
0.353 |
|
| 2004 |
Gunawan R, Jung MYL, Seebauer EG, Braatz RD. Optimal control of rapid thermal annealing in a semiconductor process Journal of Process Control. 14: 423-430. DOI: 10.1016/J.Jprocont.2003.07.005 |
0.64 |
|
| 2004 |
Ganley JC, Riechmann KL, Seebauer EG, Masel RI. Porous anodic alumina optimized as a catalyst support for microreactors Journal of Catalysis. 227: 26-32. DOI: 10.1016/J.Jcat.2004.06.016 |
0.331 |
|
| 2004 |
Jung MYL, Gunawan R, Braatz RD, Seebauer EG. Pair diffusion and kick-out: Contributions to diffusion of boron in silicon Aiche Journal. 50: 3248-3256. DOI: 10.1002/Aic.10220 |
0.727 |
|
| 2004 |
Seebauer EG. New mechanisms governing diffusion in silicon for transistor manufacture International Conference On Solid-State and Integrated Circuits Technology Proceedings, Icsict. 2: 1032-1037. |
0.377 |
|
| 2004 |
Seebauer EG. Surface control of interstitial behavior for improved ultrashallow junction formation Extended Abstracts of the Fourth International Workshop On Junction Technology, Iwjt 2004. 4: 81-86. |
0.326 |
|
| 2004 |
Jung MYL, Seebauer EG. Measurement of nonthermal illumination-enhanced self-diffusion in silicon Extended Abstracts of the Fourth International Workshop On Junction Technology, Iwjt 2004. 4: 87-89. |
0.333 |
|
| 2003 |
Jung MYL, Gunawan R, Braatz RD, Seebauer EG. Ramp-rate effects on transient enhanced diffusion and dopant activation Journal of the Electrochemical Society. 150. DOI: 10.1149/1.1627354 |
0.69 |
|
| 2003 |
Gunawan R, Jung MYL, Braatz RD, Seebauer EG. Parameter sensitivity analysis applied to modeling transient enhanced diffusion and activation of boron in silicon Journal of the Electrochemical Society. 150. DOI: 10.1149/1.1619992 |
0.716 |
|
| 2003 |
Dev K, Jung MYL, Gunawan R, Braatz RD, Seebauer EG. Mechanism for coupling between properties of interfaces and bulk semiconductors Physical Review B. 68. DOI: 10.1103/Physrevb.68.195311 |
0.713 |
|
| 2003 |
Dev K, Seebauer EG. Surface vacancy charging on semiconductors at nonzero temperatures Physical Review B - Condensed Matter and Materials Physics. 67: 353121-353124. DOI: 10.1103/Physrevb.67.035312 |
0.43 |
|
| 2003 |
Yeung H, Chan H, Dev K, Seebauer EG. Vacancy charging on Si(100)-(2X1): Consequences for surface diffusion and STM imaging Physical Review B - Condensed Matter and Materials Physics. 67: 353111-353117. DOI: 10.1103/Physrevb.67.035311 |
0.422 |
|
| 2003 |
Dev K, Seebauer EG. Vacancy charging on Si(1 1 1)-(7 × 7) investigated by density functional theory Surface Science. 538: L495-L499. DOI: 10.1016/S0039-6028(03)00734-9 |
0.366 |
|
| 2003 |
Gunawan R, Jung MYL, Seebauer EG, Braatz RD. Maximum a posteriori estimation of transient enhanced diffusion energetics Aiche Journal. 49: 2114-2123. DOI: 10.1002/Aic.690490819 |
0.658 |
|
| 2003 |
Dev K, Jung MYL, Gunawan R, Braatz RD, Seebauer EG. Mechanism for coupling between properties of interfaces and bulk semiconductors Physical Review B - Condensed Matter and Materials Physics. 68: 1953111-1953116. |
0.519 |
|
| 2002 |
Jung MYL, Seebauer EG. Measurement of nonthermal illumination-enhanced diffusion in silicon 10th Ieee International Conference On Advanced Thermal Processing of Semiconductors, Rtp 2002. 133-135. DOI: 10.1109/RTP.2002.1039451 |
0.338 |
|
| 2002 |
Gunawan R, Jung MYL, Braatz RD, Seebauer EG. Systems analysis applied to modeling dopant activation and TED in rapid thermal annealing 10th Ieee International Conference On Advanced Thermal Processing of Semiconductors, Rtp 2002. 107-110. DOI: 10.1109/RTP.2002.1039447 |
0.644 |
|
| 2002 |
Wang Z, Seebauer EG. Extraordinary temperature amplification in ion-stimulated surface processes at low energies Physical Review B - Condensed Matter and Materials Physics. 66: 2054091-2054094. DOI: 10.1103/Physrevb.66.205409 |
0.387 |
|
| 2002 |
Llera-Hurlburt D, Dalton AS, Seebauer EG. Temperature-dependent surface diffusion parameters on amorphous materials Surface Science. 504: 244-252. DOI: 10.1016/S0039-6028(02)01106-8 |
0.487 |
|
| 2001 |
Fang H, Öztürk MC, O'Neil PA, Seebauer EG. Arsenic Redistribution during Rapid Thermal Chemical Vapor Deposition of TiSi2 on Si Journal of the Electrochemical Society. 148. DOI: 10.1149/1.1339236 |
0.366 |
|
| 2001 |
Ditchfield R, Seebauer EG. Semiconductor surface diffusion: Effects of low-energy ion bombardment Physical Review B - Condensed Matter and Materials Physics. 63: 1253171-1253179. DOI: 10.1103/Physrevb.63.125317 |
0.391 |
|
| 2001 |
Wang Z, Seebauer EG. Estimating pre-exponential factors for desorption from semiconductors: Consequences for a priori process modeling Applied Surface Science. 181: 111-120. DOI: 10.1016/S0169-4332(01)00382-8 |
0.314 |
|
| 2001 |
Dalton AS, Llera-Hurlburt D, Seebauer EG. Surface diffusion kinetics on amorphous silicon Surface Science. 494: L761-L766. DOI: 10.1016/S0039-6028(01)01493-5 |
0.473 |
|
| 2000 |
Ditchfield R, Llera-Rodríguez D, Seebauer EG. Semiconductor surface diffusion: Nonthermal effects of photon illumination Physical Review B - Condensed Matter and Materials Physics. 61: 13710-13720. DOI: 10.1103/Physrevb.61.13710 |
0.477 |
|
| 2000 |
Idriss H, Seebauer EG. Effect of oxygen electronic polarisability on catalytic reactions over oxides Catalysis Letters. 66: 139-145. DOI: 10.1023/A:1019055824776 |
0.322 |
|
| 1999 |
Fang H, Öztürk MC, Seebauer EG, Batchelor DE. Effects of arsenic doping on chemical vapor deposition of titanium silicide Journal of the Electrochemical Society. 146: 4240-4245. DOI: 10.1149/1.1392621 |
0.437 |
|
| 1999 |
Ditchtield R, Seebauer EG. Direct Measurement of Ion-Influenced Surface Diffusion Physical Review Letters. 82: 1185-1188. DOI: 10.1103/Physrevlett.82.1185 |
0.401 |
|
| 1999 |
Blomiley ER, Seebauer EG. New approach to manipulating and characterizing powdered photoadsorbents: NO on Cl-treated Fe2O3 Langmuir. 15: 5970-5976. DOI: 10.1021/La9813329 |
0.361 |
|
| 1998 |
Fang H, Özttirk MC, Seebauer EG. Selective rapid thermal chemical vapor deposition of titanium silicide on arsenic implanted silicon Mrs Proceedings. 514: 231-236. DOI: 10.1557/Proc-514-231 |
0.317 |
|
| 1998 |
Ditchfield R, Llera-Rodríguez D, Seebauer EG. Nonthermal effects of photon illumination on surface diffusion Physical Review Letters. 81: 1259-1262. DOI: 10.1103/Physrevlett.81.1259 |
0.48 |
|
| 1998 |
Idriss H, Seebauer EG. Photooxidation of ethanol on Fe-Ti oxide particulates Langmuir. 14: 6146-6150. DOI: 10.1021/La9704664 |
0.326 |
|
| 1997 |
Ditchfield R, Seebauer EG. Problems with the concept of thermal budget: Experimental demonstrations Materials Research Society Symposium - Proceedings. 470: 313-318. DOI: 10.1557/Proc-470-313 |
0.404 |
|
| 1997 |
Ditchfield R, Seebauer EG. Rapid thermal processing: Fixing problems with the concept of thermal budget Journal of the Electrochemical Society. 144: 1842-1849. DOI: 10.1149/1.1837688 |
0.385 |
|
| 1997 |
Allen CE, Ditchfield R, Seebauer EG. Surface diffusion of Ge on Si(111): Experiment and simulation Physical Review B - Condensed Matter and Materials Physics. 55: 13304-13313. DOI: 10.1103/Physrevb.55.13304 |
0.44 |
|
| 1997 |
Southwell RP, Seebauer EG. Practical processing issues in titanium silicide CVD Applied Surface Science. 119: 41-49. DOI: 10.1016/S0169-4332(97)00168-2 |
0.383 |
|
| 1996 |
Ditchfield R, Mendicino MA, Seebauer EG. Adsorption of chlorine on TiSi2: application to etching and deposition of silicide films Journal of the Electrochemical Society. 143: 266-271. DOI: 10.1149/1.1836420 |
0.36 |
|
| 1996 |
Southwell RP, Mendicino MA, Seebauer EG. Optimization of selective TiSi2 chemical vapor deposition by mechanistic chemical kinetics Journal of Vacuum Science and Technology. 14: 928-934. DOI: 10.1116/1.580417 |
0.386 |
|
| 1996 |
Allen CE, Ditchfield R, Seebauer EG. Surface diffusion of in on Si(111): Evidence for surface ionization effects Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 14: 22-29. DOI: 10.1116/1.579925 |
0.46 |
|
| 1996 |
Allen CE, Seebauer EG. Surface diffusivities and reaction rate constants: Making a quantitative experimental connection Journal of Chemical Physics. 104: 2557-2565. DOI: 10.1063/1.471003 |
0.414 |
|
| 1996 |
Suni II, Seebauer EG. Surface self diffusion at high temperatures: New simulational insights Thin Solid Films. 272: 229-234. DOI: 10.1016/0040-6090(95)06949-6 |
0.424 |
|
| 1995 |
Mendicino MA, Seebauer EG. Kinetics of salicide contact formation for thin-film soi transistors Journal of the Electrochemical Society. 142: L28-L30. DOI: 10.1149/1.2044125 |
0.369 |
|
| 1995 |
Southwell RP, Seebauer EG. Structure and Morphology of Microprotrusions Grown on Ar-Sputtered InP Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 221-229. DOI: 10.1116/1.579402 |
0.392 |
|
| 1995 |
Allen CE, Seebauer EG. Surface diffusion of Sb on Si(111) measured by second harmonic microscopy Langmuir. 11: 186-190. DOI: 10.1021/La00001A032 |
0.462 |
|
| 1995 |
Seebauer EG, Allen CE. Estimating surface diffusion coefficients Progress in Surface Science. 49: 265-330. DOI: 10.1016/0079-6816(95)00039-2 |
0.468 |
|
| 1995 |
Southwell RP, Seebauer EG. Differential-conversion temperature programmed desorption: a new method for obtaining bimolecular surface rate constants Surface Science. 340: 281-292. DOI: 10.1016/0039-6028(95)00552-8 |
0.359 |
|
| 1995 |
Southwell RP, Seebauer EG. SiH4 on TiSi2: an investigation of gas adsorption on metal-like compounds Surface Science. 329: 107-114. DOI: 10.1016/0039-6028(95)00012-7 |
0.34 |
|
| 1994 |
Mendicino MA, Southwell RP, Seebauer EG. Predictive surface kinetic analysis: the case of TiSi2 CVD Materials Research Society Symposium Proceedings. 334: 63-68. DOI: 10.1557/Proc-334-63 |
0.301 |
|
| 1994 |
Suni II, Seebauer EG. A new physical picture for surface diffusion at high temperatures Surface Science. 301. DOI: 10.1557/Proc-317-21 |
0.436 |
|
| 1994 |
Suni II, Seebauer EG. Surface diffusion of in on Ge(111) studied by optical second harmonic microscopy The Journal of Chemical Physics. 100: 6772-6777. DOI: 10.1063/1.467036 |
0.468 |
|
| 1994 |
Suni II, Seebauer EG. New physical picture for surface diffusion at high temperatures Materials Research Society Symposium Proceedings. 317: 21-26. |
0.351 |
|
| 1993 |
Schultz KA, Suni II, Seebauer EG. Microscopy of adsorbates by surface second-harmonic generation Journal of the Optical Society of America B: Optical Physics. 10: 546-550. DOI: 10.1364/Josab.10.000546 |
0.406 |
|
| 1993 |
Mendicino MA, Seebauer EG. Adsorption of chlorine on Si(100) Applied Surface Science. 68: 285-290. DOI: 10.1016/0169-4332(93)90247-9 |
0.351 |
|
| 1992 |
Schultz KA, Seebauer EG. Surface diffusion of Sb on Ge(111) monitored quantitatively with optical second harmonic microscopy The Journal of Chemical Physics. 97: 6958-6967. DOI: 10.1063/1.463657 |
0.44 |
|
| 1992 |
Schultz KA, Suni II, Allen CE, Seebauer EG. Optical second harmonic study of Sb adsorption on Ge(111) Surface Science. 276: 40-49. DOI: 10.1016/0039-6028(92)90693-Z |
0.341 |
|
| 1992 |
Mendicino MA, Seebauer EG. Adsorption of TiCl4 on Si(100) Surface Science. 277: 89-96. DOI: 10.1016/0039-6028(92)90614-C |
0.322 |
|
| 1989 |
Seebauer EG. Adsorption of CO, O2, and H2O on GaAs(100): Photoreflectance Studies Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 7: 3279-3286. DOI: 10.1116/1.576136 |
0.387 |
|
| 1989 |
Seebauer EG. Oxidation and annealing of GaAs (100) studied by photoreflectance Journal of Applied Physics. 66: 4963-4972. DOI: 10.1063/1.343769 |
0.376 |
|
| 1988 |
Seebauer EG, Kong ACF, Schmidt LD. Surface diffusion of hydrogen and CO on Rh(111): Laser‐induced thermal desorption studies Journal of Chemical Physics. 88: 6597-6604. DOI: 10.1063/1.454447 |
0.591 |
|
| 1988 |
Seebauer EG, Kong ACF, Schmidt LD. Adsorption and desorption of CO and H2 on Rh(111): Laser-induced desorption Applied Surface Science. 31: 163-172. DOI: 10.1016/0169-4332(88)90030-X |
0.502 |
|
| 1988 |
Seebauer EG, Kong ACF, Schmidt LD. The coverage dependence of the pre-exponential factor for desorption Surface Science. 193: 417-436. DOI: 10.1016/0039-6028(88)90444-X |
0.544 |
|
| 1988 |
Seebauer EG, Schmidt LD. Experimental measurements of hydrogen and CO surface diffusion on rhodium Aiche Symposium Series. 84: 1-9. |
0.322 |
|
| 1988 |
Seebauer EG, Kong ACF, Schmidt LD. Surface diffusion of hydrogen and CO on Rh(111): Laser-induced thermal desorption studies The Journal of Chemical Physics. 88: 6597-6604. |
0.344 |
|
| 1987 |
Seebauer EG, Kong ACF, Schmidt LD. Investigations of adsorption on Pt and Rh by laser-induced desorption Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 464-468. DOI: 10.1116/1.574693 |
0.584 |
|
| 1987 |
Hwang SY, Seebauer EG, Schmidt LD. Decomposition of CH3NH2 on Pt(111) Surface Science. 188: 219-234. DOI: 10.1016/S0039-6028(87)80153-X |
0.483 |
|
| 1987 |
Seebauer EG, Kong ACF, Schmidt LD. Laser-induced desorption of polyatomic molecules with a CO2 laser Applied Surface Science. 29: 380-390. DOI: 10.1016/0169-4332(87)90041-9 |
0.485 |
|
| 1986 |
Seebauer EG, Kong ACF, Schmidt LD. Adsorption and desorption of NO, CO and H2 on Pt(111): Laser-induced thermal desorption studies Surface Science. 176: 134-156. DOI: 10.1016/0039-6028(86)90168-8 |
0.536 |
|
| 1986 |
Seebauer EG, Schmidt LD. Surface diffusion of hydrogen on Pt(111): laser-induced thermal desorption studies Chemical Physics Letters. 123: 129-133. DOI: 10.1016/0009-2614(86)87027-0 |
0.592 |
|
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