Year |
Citation |
Score |
2023 |
Bhowmick M, Ullrich B, Murchland M, Zhou X, Ramkumar C. Substrate and Excitation Intensity Dependence of Saturable Absorption in Perovskite Quantum Dot Films. Nanomaterials (Basel, Switzerland). 13. PMID 36903749 DOI: 10.3390/nano13050871 |
0.79 |
|
2022 |
Bhowmick M, Xi H, Ullrich B. Microscopic description and uncertainty of the Stokes shift in semiconductors. Optics Letters. 47: 1953-1955. PMID 35427309 DOI: 10.1364/OL.456257 |
0.732 |
|
2021 |
Bhowmick M, Xi H, Ullrich B. Optical Bandgap Definition via a Modified Form of Urbach's Rule. Materials (Basel, Switzerland). 14. PMID 33801574 DOI: 10.3390/ma14071639 |
0.744 |
|
2020 |
Ullrich B, Xi H, Bhowmick M. Correction of the Fan factor Aip Advances. 10: 35014. DOI: 10.1063/5.0004630 |
0.724 |
|
2019 |
Bhowmick M, Xi H, Androulidaki M, Ullrich B. Mathematical assessment of the thermal band gap variation of semiconductors Physica Scripta. 94: 85701. DOI: 10.1088/1402-4896/Ab0230 |
0.727 |
|
2018 |
Bhowmick M, Ullrich B, Androulidaki M, Xi H. The thermo-electric nature of the Debye temperature Aip Advances. 8: 55318. DOI: 10.1063/1.5004704 |
0.729 |
|
2017 |
Ullrich B, Bhowmick M, Xi H. Erratum: “Relation between Debye temperature and energy band gap of semiconductors” [AIP Adv. 7, 045109 (2017)] Aip Advances. 7: 109902. DOI: 10.1063/1.5007149 |
0.733 |
|
2017 |
Ullrich B, Bhowmick M, Xi H. Relation between Debye temperature and energy band gap of semiconductors Aip Advances. 7: 45109. DOI: 10.1063/1.4980142 |
0.749 |
|
2016 |
Ullrich B, Duckworth RM, Singh AK, Barik P, Mejía-Villanueva VO, Garcia-Pérez AC. Optical properties of a scorpion (Centruroides limpidus) Physica Scripta. 91. DOI: 10.1088/0031-8949/91/4/045802 |
0.431 |
|
2016 |
Ullrich B, Xi H, Wang JS. Photoluminescence limiting of colloidal PbS quantum dots Applied Physics Letters. 108. DOI: 10.1063/1.4942608 |
0.4 |
|
2016 |
Wang JS, Ullrich B, Das A, Wai CM, Brown GJ, Dass CK, Hendrickson JR. Luminescence studies for energy transfer of lead sulfide QD films Rsc Advances. 6: 48651-48660. DOI: 10.1039/C6Ra03632E |
0.412 |
|
2015 |
Shahi PK, Singh AK, Singh SK, Rai SB, Ullrich B. Revelation of the Technological Versatility of the Eu(TTA)3Phen Complex by Demonstrating Energy Harvesting, Ultraviolet Light Detection, Temperature Sensing, and Laser Applications. Acs Applied Materials & Interfaces. PMID 26238311 DOI: 10.1021/Acsami.5B06350 |
0.358 |
|
2015 |
Ullrich B, Singh AK, Barik P, Xi H, Bhowmick M. Inherent photoluminescence Stokes shift in GaAs. Optics Letters. 40: 2580-3. PMID 26030562 DOI: 10.1364/Ol.40.002580 |
0.77 |
|
2015 |
Ullrich B, Barik P, Singh AK, García-Ramírez EV, Reyes-Esqueda JA. Photo-dynamic Burstein-Moss doping of PbS quantum dots in solution by single and twophoton optical pumping Optical Materials Express. 5: 2431-2436. DOI: 10.1364/Ome.5.002431 |
0.462 |
|
2015 |
Barik P, Singh AK, Ullrich B. Magneto-optical reflectance and absorbance of PbS quantum dots Physica Scripta. 90. DOI: 10.1088/0031-8949/90/9/095501 |
0.349 |
|
2015 |
Yue F, Tomm JW, Kruschke D, Ullrich B, Chu J. Temperature dependence of the fundamental excitonic resonance in lead-salt quantum dots Applied Physics Letters. 107. DOI: 10.1063/1.4926806 |
0.324 |
|
2015 |
Singh AK, Shahi PK, Rai SB, Ullrich B. Host matrix impact on Er3+ upconversion emission and its temperature dependence Rsc Advances. 5: 16067-16073. DOI: 10.1039/C4Ra12637H |
0.33 |
|
2015 |
Shahi PK, Singh AK, Rai SB, Ullrich B. Lanthanide complexes for temperature sensing, UV light detection, and laser applications Sensors and Actuators, a: Physical. 222: 255-261. DOI: 10.1016/J.Sna.2014.12.021 |
0.429 |
|
2014 |
Ullrich B, Antillón A, Bhowmick M, Wang JS, Xi H. Atomic transition region at the crossover between quantum dots to molecules Physica Scripta. 89. DOI: 10.1088/0031-8949/89/02/025801 |
0.731 |
|
2014 |
Singh AK, Barik P, Ullrich B. Magneto-optical controlled transmittance alteration of PbS quantum dots by moderately applied magnetic fields at room temperature Applied Physics Letters. 105. DOI: 10.1063/1.4904810 |
0.33 |
|
2014 |
Ullrich B, Singh AK, Bhowmick M, Barik P, Ariza-Flores D, Xi H, Tomm JW. Photoluminescence lineshape of ZnO Aip Advances. 4. DOI: 10.1063/1.4897383 |
0.753 |
|
2014 |
Ullrich B, Xi H, Wang JS. Photoinduced band filling in strongly confined colloidal PbS quantum dots Journal of Applied Physics. 115. DOI: 10.1063/1.4883761 |
0.387 |
|
2014 |
Ullrich B, Ariza-Flores D, Bhowmick M. Intrinsic photoluminescence Stokes shift in semiconductors demonstrated by thin-film CdS formed with pulsed-laser deposition Thin Solid Films. 558: 24-26. DOI: 10.1016/J.Tsf.2014.02.047 |
0.814 |
|
2014 |
Markelonis AR, Wang JS, Ullrich B, Wai CM, Brown GJ. Nanoparticle film deposition using a simple and fast centrifuge sedimentation method Applied Nanoscience. 5: 457-468. DOI: 10.1007/S13204-014-0338-X |
0.366 |
|
2013 |
Ullrich B, Xi H. Photocurrent limit in nanowires. Optics Letters. 38: 4698-700. PMID 24322109 DOI: 10.1364/Ol.38.004698 |
0.309 |
|
2013 |
Wang JS, Steenbergen EH, Smith HE, Grazulis L, Massengale JA, Ullrich B, Brown GJ. Stability studies of lead sulfide colloidal quantum dot films on glass and GaAs substrates Proceedings of Spie - the International Society For Optical Engineering. 8634. DOI: 10.1117/12.2002499 |
0.462 |
|
2013 |
Wang JS, Ullrich B, Brown GJ, Wai CM. Morphology and energy transfer in PbS quantum dot arrays formed with supercritical fluid deposition Materials Chemistry and Physics. 141: 195-202. DOI: 10.1016/J.Matchemphys.2013.05.003 |
0.384 |
|
2013 |
Ullrich B, Wang JS. Impact of laser excitation variations on the photoluminescence of PbS quantum dots on GaAs Journal of Luminescence. 143: 645-648. DOI: 10.1016/j.jlumin.2013.05.028 |
0.32 |
|
2012 |
Ullrich B, Markelonis AR, Wang JS, Brown GJ. Emission of precipitation deposited PbS quantum dots on polyethylene terephthalate Materials Research Society Symposium Proceedings. 1436: 63-68. DOI: 10.1557/Opl.2013.1096 |
0.353 |
|
2012 |
Wang JS, Ullrich B, Brown GJ. PbS nanoparticles: Synthesis, supercritical fluid deposition, and optical studies Materials Research Society Symposium Proceedings. 1449: 81-86. DOI: 10.1557/Opl.2012.792 |
0.422 |
|
2012 |
Ullrich B, Wang JS, Xiao XY, Brown GJ. Fourier spectroscopy on PbS quantum dots Proceedings of Spie - the International Society For Optical Engineering. 8271. DOI: 10.1117/12.905980 |
0.332 |
|
2012 |
Steenbergen EH, Nunna K, Ouyang L, Ullrich B, Huffaker DL, Smith DJ, Zhang YH. Strain-balanced InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3672028 |
0.314 |
|
2012 |
Ullrich B, Brown GJ, Xi H. Semiconductor band gap localization via Gaussian function Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/10/105016 |
0.364 |
|
2011 |
Wang JS, Ullrich B, Brown GJ. Lead sulfide quantum dot synthesis, deposition, and temperature dependence studies of the Stokes shift Materials Research Society Symposium Proceedings. 1409: 49-54. DOI: 10.1557/Opl.2012.755 |
0.354 |
|
2011 |
Ullrich B, Brown GJ. Doping of GaAs by laser ablated ZnTe Applied Physics Letters. 99. DOI: 10.1063/1.3630033 |
0.379 |
|
2010 |
Ullrich B, Xi H. Photocurrent theory based on coordinate dependent lifetime. Optics Letters. 35: 3910-2. PMID 21124562 DOI: 10.1364/Ol.35.003910 |
0.321 |
|
2010 |
Brown GJ, Elhamri S, Smith HE, Mahalingam K, Haugan HJ, Pacley S, Ullrich B, Szmulowicz F. Type-II superlattice materials research at the Air Force Research Laboratory Proceedings of Spie - the International Society For Optical Engineering. 7660. DOI: 10.1117/12.853630 |
0.34 |
|
2010 |
Haugan HJ, Ullrich B, Grazulis L, Elhamri S, Brown GJ, Mitchel WC. Optical and electrical quality improvements of undoped InAs/GaSb superlattices Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28. DOI: 10.1116/1.3273940 |
0.368 |
|
2010 |
Acharya KP, Khatri H, Marsillac S, Ullrich B, Anzenbacher P, Zamkov M. Pulsed laser deposition of graphite counter electrodes for dye-sensitized solar cells Applied Physics Letters. 97. DOI: 10.1063/1.3518481 |
0.653 |
|
2010 |
Haugan HJ, Ullrich B, Elhamri S, Szmulowicz F, Brown GJ, Tung LC, Wang YJ. Magneto-optics of InAs/GaSb superlattices Journal of Applied Physics. 107. DOI: 10.1063/1.3391976 |
0.334 |
|
2010 |
Acharya KP, Hewa-Kasakarage NN, Alabi TR, Nemitz I, Khon E, Ullrich B, Anzenbacher P, Zamkov M. Synthesis of PbS/TiO2 colloidal heterostructures for photovoltaic applications Journal of Physical Chemistry C. 114: 12496-12504. DOI: 10.1021/Jp104197S |
0.623 |
|
2010 |
Acharya KP, Mahalingam K, Ullrich B. Structural, compositional, and optoelectronic properties of thin-film CdS on p-GaAs prepared by pulsed-laser deposition Thin Solid Films. 518: 1784-1787. DOI: 10.1016/J.Tsf.2009.09.032 |
0.722 |
|
2009 |
Liyanage C, Acharya K, Ullrich B. Photonic digitizing and pattern alteration with flexible CdS and GaAs film surfaces Journal of the Optical Society of America B: Optical Physics. 26: 254-258. DOI: 10.1364/Josab.26.000254 |
0.703 |
|
2009 |
Acharya KP, Khatri H, Ullrich B. Physical characterization of n-GaAs on p-Si formed by low-temperature pulsed-laser deposition Journal of Applied Physics. 105. DOI: 10.1063/1.3132819 |
0.726 |
|
2009 |
Acharya KP, Erlacher A, Ullrich B. Responsivity properties of ZnTe/GaAs heterostructures formed with pulsed-laser deposition Solar Energy Materials and Solar Cells. 93: 25-27. DOI: 10.1016/J.Solmat.2008.02.024 |
0.799 |
|
2009 |
Ullrich B, Brown GJ. Room temperature photoluminescence of amorphous GaAs Materials Letters. 63: 2489-2491. DOI: 10.1016/j.matlet.2009.08.047 |
0.419 |
|
2009 |
Haugan HJ, Elhamri S, Ullrich B, Szmulowicz F, Brown GJ, Mitchel WC. Optimizing residual carriers in undoped InAs/GaSb superlattices for high operating temperature mid-infrared detectors Journal of Crystal Growth. 311: 1897-1900. DOI: 10.1016/J.Jcrysgro.2008.09.141 |
0.353 |
|
2008 |
Acharya KP, Ullrich B. Responsivity modulation of thin-film CdS by means of lock-in technique Proceedings of Spie - the International Society For Optical Engineering. 6890. DOI: 10.1117/12.761852 |
0.675 |
|
2008 |
Ullrich B, Erlacher A, Smith HE, Mitchel WC, Brown GJ. Electronic properties of p-GaAs deposited on n-Si with pulsed-laser deposition Journal of Physics Condensed Matter. 20. DOI: 10.1088/0953-8984/20/17/175217 |
0.771 |
|
2008 |
Haugan HJ, Elhamri S, Szmulowicz F, Ullrich B, Brown GJ, Mitchel WC. Study of residual background carriers in midinfrared InAsGaSb superlattices for unfcooled detector operation Applied Physics Letters. 92. DOI: 10.1063/1.2884264 |
0.322 |
|
2007 |
Acharya KP, Skuza JR, Lukaszew RA, Liyanage C, Ullrich B. CdS thin films formed on flexible plastic substrates by pulsed-laser deposition Journal of Physics Condensed Matter. 19. DOI: 10.1088/0953-8984/19/19/196221 |
0.724 |
|
2007 |
Ullrich B, Munshi SR, Brown GJ. Photoluminescence analysis of p-doped GaAs using the Roosbroeck-Shockley relation Semiconductor Science and Technology. 22: 1174-1177. DOI: 10.1088/0268-1242/22/10/016 |
0.408 |
|
2007 |
Acharya KP, Ullrich B, Erlacher A. Responsivity of ZnTen-GaAs heterostructures formed by infrared nanosecond laser deposition Journal of Applied Physics. 102. DOI: 10.1063/1.2786890 |
0.8 |
|
2007 |
Acharya KP, Erlacher A, Ullrich B. Optoelectronic properties of ZnTe/Si heterostructures formed by nanosecond laser deposition at different Nd:YAG laser lines Thin Solid Films. 515: 4066-4069. DOI: 10.1016/J.Tsf.2006.10.135 |
0.824 |
|
2007 |
Ullrich B. Thin-film CdS formed with pulsed-laser deposition towards optical and hybrid device applications Journal of Materials Science: Materials in Electronics. 18: 1105-1108. DOI: 10.1007/S10854-007-9138-3 |
0.528 |
|
2007 |
Haugan HJ, Szmulowicz F, Brown GJ, Ullrich B, Munshi SR, Wickett JC, Stokes DW. Short-period InAs/GaSb superlattices for mid-infrared photodetectors Physica Status Solidi (C) Current Topics in Solid State Physics. 4: 1702-1706. DOI: 10.1002/Pssc.200674250 |
0.364 |
|
2006 |
Erlacher A, Lukaszew AR, Jaeger H, Ullrich B. Surface and texture characterization of thin-film ZnTe formed with pulsed-laser deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 1623-1626. DOI: 10.1116/1.2167072 |
0.791 |
|
2006 |
Erlacher A, Danilov EO, Ullrich B. Introduction of glass/GaAs interfaces for all-optical and hybrid switch fabrics Semiconductor Science and Technology. 21: 1331-1334. DOI: 10.1088/0268-1242/21/9/019 |
0.734 |
|
2006 |
Haugan HJ, Mahalingam K, Brown GJ, Mitchel WC, Ullrich B, Grazulis L, Elhamri S, Wickett JC, Stokes DW. Growth of short-period InAs∕GaSb superlattices Journal of Applied Physics. 100: 123110. DOI: 10.1063/1.2401280 |
0.347 |
|
2006 |
Erlacher A, Lukaszew AR, Jaeger H, Ullrich B. Structural and surface analysis of thin-film ZnTe formed with pulsed-laser deposition Surface Science. 600: 3762-3765. DOI: 10.1016/J.Susc.2006.02.061 |
0.784 |
|
2006 |
Haugan HJ, Szmulowicz F, Brown GJ, Ullrich B, R Munshi S, Grazulis L, Mahalingam K, Fenstermaker ST. Pushing the envelope to the maximum: Short-period InAs/GaSb type-II superlattices for mid-infrared detectors Physica E: Low-Dimensional Systems and Nanostructures. 32: 289-292. DOI: 10.1016/J.Physe.2005.12.072 |
0.369 |
|
2006 |
Erlacher A, Ullrich B, Komarova EY, Jaeger H, Haugan HJ, Brown GJ. Texture and surface analysis of thin-film GaAs on glass formed by pulsed-laser deposition Journal of Non-Crystalline Solids. 352: 193-196. DOI: 10.1016/J.Jnoncrysol.2005.10.025 |
0.768 |
|
2005 |
Szmulowicz F, Haugan HJ, Brown GJ, Mahalingam K, Ullrich B, Munshi SR, Grazulis L. Interfaces as design tools for short-period InAs/GaSb type-II superlattices for mid-infrared detectors Proceedings of Spie - the International Society For Optical Engineering. 5957: 1-12. DOI: 10.2478/S11772-006-0010-4 |
0.331 |
|
2005 |
Erlacher A, Ambrico M, Perna G, Schiavulli L, Ligonzo T, Jaeger H, Ullrich B. Absorption and photocurrent properties of low-temperature laser deposited thin-film GaAs on glass Proceedings of Spie - the International Society For Optical Engineering. 5850: 1-7. DOI: 10.1117/12.633697 |
0.77 |
|
2005 |
Erlacher A, Ullrich B. Laser crossing in thin-film GaAs for all-optical computing realizations Proceedings of Spie - the International Society For Optical Engineering. 5907: 1-7. DOI: 10.1117/12.615198 |
0.772 |
|
2005 |
Erlacher A, Ullrich B, Konopinski RJ, Haugan HJ. Optical gate realization by laser crossing in thin-film semiconductors on glass Proceedings of Spie - the International Society For Optical Engineering. 5723: 179-186. DOI: 10.1117/12.590760 |
0.758 |
|
2005 |
Ullrich B, Erlacher A. Photosensitive hetero-pairing of p-GaAs/n-Si by pulsed-laser deposition Journal of Physics D: Applied Physics. 38: 4048-4052. DOI: 10.1088/0022-3727/38/22/007 |
0.745 |
|
2005 |
Haugan HJ, Szmulowicz F, Mahalingam K, Brown GJ, Munshi SR, Ullrich B. Short-period InAsGaSb type-II superlattices for mid-infrared detectors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2150269 |
0.316 |
|
2005 |
Ullrich B, Erlacher A. Rectification and intrinsic photocurrent of GaAs/Si photodiodes formed with pulsed-laser deposition at 1064 nm Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2093942 |
0.756 |
|
2005 |
Khanlary M, Townsend P, Ullrich B, Hole DE. Ion-beam luminescence of thin-film CdS on glass formed by pulsed-laser deposition Journal of Applied Physics. 97. DOI: 10.1063/1.1830085 |
0.384 |
|
2005 |
Erlacher A, Ambrico M, Perna G, Schiavulli L, Ligonzo T, Jaeger H, Ullrich B. Absorption and photoconductivity properties of ZnTe thin films formed by pulsed-laser deposition on glass Applied Surface Science. 248: 402-405. DOI: 10.1016/J.Apsusc.2005.03.041 |
0.794 |
|
2004 |
Ullrich B, Erlacher A, Jaeger H. The formation of GaAs/Si photodiodes by pulsed-laser deposition Proceedings of Spie - the International Society For Optical Engineering. 5339: 365-373. DOI: 10.1117/12.528546 |
0.78 |
|
2004 |
Ullrich B, Erlacher A, Gerasimov TG, Komarova EY, Jaeger H. Optoelectronic multiplexer realization by a GaAs/Si hetero-structure formed by pulsed-laser deposition Proceedings of Spie - the International Society For Optical Engineering. 5359: 23-30. DOI: 10.1117/12.528544 |
0.762 |
|
2004 |
Erlacher A, Ullrich B. All-optical digitizing of laser transmission through thin-film GaAs on glass Semiconductor Science and Technology. 19. DOI: 10.1088/0268-1242/19/3/L01 |
0.765 |
|
2004 |
Ullrich B, Erlacher A, Danilov EO. Switch performance and electronic nature of photonic laser digitizing through thin GaAs films on glass Semiconductor Science and Technology. 19. DOI: 10.1088/0268-1242/19/12/L01 |
0.77 |
|
2004 |
Erlacher A, Ambrico M, Capozzi V, Augelli V, Jaeger H, Ullrich B. X-ray, absorption and photocurrent properties of thin-film GaAs on glass formed by pulsed-laser deposition Semiconductor Science and Technology. 19: 1322-1324. DOI: 10.1088/0268-1242/19/11/019 |
0.787 |
|
2004 |
Erlacher A, Miller H, Ullrich B. Low-power all-optical switch by superposition of red and green laser irradiation in thin-film cadmium sulfide on glass Journal of Applied Physics. 95: 2927-2929. DOI: 10.1063/1.1644893 |
0.752 |
|
2003 |
Ullrich B, Erlacher A, Yano S, Schroeder R, Gerasimov TG, Haugan HJ. Preparation of thin film GaAs on glass by pulsed-laser deposition Proceedings of Spie - the International Society For Optical Engineering. 4977: 180-187. DOI: 10.1117/12.472848 |
0.777 |
|
2003 |
Ullrich B, Schroeder R, Knigge A, Zorn M, Weyers M. In situ analysis of a vertical-cavity surface-emitting laser active layer by two-photon spectroscopy Optical Engineering. 42: 1152-1156. DOI: 10.1117/1.1557173 |
0.45 |
|
2003 |
Yano S, Schroeder R, Sakai H, Ullrich B. High-electric-field photocurrent in thin-film ZnS formed by pulsed-laser deposition Applied Physics Letters. 82: 2026-2028. DOI: 10.1063/1.1564287 |
0.515 |
|
2003 |
Ullrich B, Yano S, Schroeder R, Sakai H. Analysis of single- and two-photon-excited green emission spectra of thin-film cadmium sulfide Journal of Applied Physics. 93: 1914-1917. DOI: 10.1063/1.1537459 |
0.47 |
|
2003 |
Yano S, Ullrich B. Identity of green single- and two-photon excited interband emission in thin film CdS on glass Thin Solid Films. 444: 295-298. DOI: 10.1016/S0040-6090(03)01052-6 |
0.453 |
|
2003 |
Yano S, Schroeder R, Ullrich B, Sakai H. Absorption and photocurrent properties of thin ZnS films formed by pulsed-laser deposition on quartz Thin Solid Films. 423: 273-276. DOI: 10.1016/S0040-6090(02)01037-4 |
0.545 |
|
2002 |
Schroeder R, Ullrich B. Optoelectronic junction devices based on organic/inorganic hetero-paired semiconductors Materials Research Society Symposium - Proceedings. 708: 29-32. DOI: 10.1557/Proc-708-Bb3.6 |
0.424 |
|
2002 |
Schroeder R, Ullrich B. Absorption and subsequent emission saturation of two-photon excited materials: Theory and experiment Optics Letters. 27: 1285-1287. DOI: 10.1364/Ol.27.001285 |
0.398 |
|
2002 |
Sakai H, Watanabe M, Takiyama K, Ullrich B. Optical properties of ZnxCd1-xS mixed crystal thin film produced by PLD Proceedings of Spie - the International Society For Optical Engineering. 4830: 270-273. DOI: 10.1117/12.486578 |
0.394 |
|
2002 |
Ullrich B, Schroeder R. Two-photon excited emission probing of thin film CdS formed by various techniques Proceedings of Spie - the International Society For Optical Engineering. 4650: 221-228. DOI: 10.1117/12.467667 |
0.42 |
|
2002 |
Dushkina NM, Ullrich B. Intensity dependence of two-photon absorption in CdS measured by photoluminescence excited by femtosecond laser pulses Optical Engineering. 41: 2365-2368. DOI: 10.1117/1.1497612 |
0.405 |
|
2002 |
Schroeder R, Knigge A, Zorn M, Weyers M, Ullrich B. Femtosecond excitation cavity studies and superluminescence by two-photon absorption in vertical cavity lasers at 300 K Physical Review B. 66. DOI: 10.1103/Physrevb.66.245302 |
0.484 |
|
2002 |
Schroeder R, Ullrich B. Photovoltaic hybrid device with broad tunable spectral response achieved by organic/inorganic thin-film heteropairing Applied Physics Letters. 81: 556-558. DOI: 10.1063/1.1494117 |
0.305 |
|
2002 |
Ullrich B, Schroeder R, Sakai H, Zhang A, Cheng SZD. Two-photon-excited green emission and its dichroic shift of oriented thin-film CdS on glass formed by laser deposition Applied Physics Letters. 80: 356-358. DOI: 10.1063/1.1432756 |
0.456 |
|
2002 |
Ullrich B, Schroeder R. Bulk emission and interface probing of thin film CdS by two-photon spectroscopy Chemical Physics. 279: 249-253. DOI: 10.1016/S0301-0104(02)00388-9 |
0.431 |
|
2002 |
Schroeder R, Knigge A, Zorn M, Weyers M, Ullrich B. Femtosecond excitation cavity studies and superluminescence by two-photon absorption in vertical cavity lasers at 300 K Physical Review B - Condensed Matter and Materials Physics. 66: 2453021-2453026. |
0.385 |
|
2001 |
Ullrich B, Schroeder R, Graupner W, Sakai S. The influence of self-absorption on the photoluminescence of thin film CdS demonstrated by two-photon absorption. Optics Express. 9: 116-120. PMID 19421280 DOI: 10.1364/Oe.9.000116 |
0.525 |
|
2001 |
Ullrich B, Schroeder R. Green single- and two-photon gap emission of thin-film CdS formed by infrared pulsed-laser deposition on glass Ieee Journal of Quantum Electronics. 37: 1363-1367. DOI: 10.1109/3.952549 |
0.431 |
|
2001 |
Schroeder R, Ullrich B, Graupner W, Scherf U. Excitation density and photoluminescence studies of polyfluorene excited by two-photon absorption Journal of Physics Condensed Matter. 13. DOI: 10.1088/0953-8984/13/16/102 |
0.414 |
|
2001 |
Ullrich B, Schroeder R. Green emission and bandgap narrowing due to two-photon excitation in thin film CdS formed by spray pyrolysis Semiconductor Science and Technology. 16. DOI: 10.1088/0268-1242/16/8/101 |
0.422 |
|
2001 |
Ullrich B, Schroeder R, Sakai H. Intrinsic gap emission and its geometry dependence of thin-film CdS excited by two-photon absorption Semiconductor Science and Technology. 16. DOI: 10.1088/0268-1242/16/12/101 |
0.41 |
|
2001 |
Ullrich B, Sakai H, Segawa Y. Optoelectronic properties of thin film CdS formed by ultraviolet and infrared pulsed-laser deposition Thin Solid Films. 385: 220-224. DOI: 10.1016/S0040-6090(00)01902-7 |
0.54 |
|
2001 |
Schroeder R, Graupner W, Scherf U, Ullrich B. Two-photon absorption properties of soluble fluorene-based conjugated polymers Materials Research Society Symposium - Proceedings. 660. |
0.324 |
|
2001 |
Ullrich B, Schroeder R, Graupner W, Sakai H. The influence of self-absorption on the photoluminescence of thin film CdS demonstrated by two-photon absorption Optics Express. 9: 116-120. |
0.442 |
|
2000 |
Dushkina NM, Ullrich B, Sakai H, Segawa Y, Hibino K, Eiju T. Reflection properties of oriented thin CdS films formed by laser ablation Thin Solid Films. 360: 222-228. DOI: 10.1016/S0040-6090(99)00965-7 |
0.514 |
|
2000 |
Ullrich B, Tomm JW, Dushkina NM, Tomm Y, Sakai H, Segawa Y. Photoelectric dichroism of oriented thin film CdS fabricated by pulsed-laser deposition Solid State Communications. 116: 33-35. DOI: 10.1016/S0038-1098(00)00267-2 |
0.502 |
|
2000 |
Ullrich B, Bagnall DM, Sakai H, Segawa Y. Photoluminescence and lasing of thin CdS films on glass formed by pulsed-laser-deposition Journal of Luminescence. 87: 1162-1164. DOI: 10.1016/S0022-2313(99)00580-3 |
0.453 |
|
2000 |
Bagnall DM, Ullrich B, Sakai H, Segawa Y. Micro-cavity lasing of optically excited CdS thin films at room temperature Journal of Crystal Growth. 214: 1015-1018. DOI: 10.1016/S0022-0248(00)00253-0 |
0.479 |
|
2000 |
Ullrich B, Sakai H. Absorption dichroism of thin CdS films formed by pulsed-laser deposition Ieee International Symposium On Compound Semiconductors, Proceedings. 115-118. |
0.438 |
|
2000 |
Tomm JW, Ullrich B, Qiu XG, Segawa Y, Ohtomo A, Kawasaki M, Koinuma H. Optical and photoelectrical properties of oriented ZnO films Journal of Applied Physics. 87: 1844-1848. |
0.317 |
|
1999 |
Ullrich B, Bagnall DM, Sakai H, Segawa Y. Photoluminescence properties of thin CdS films on glass formed by laser ablation Solid State Communications. 109: 757-760. DOI: 10.1016/S0038-1098(99)00028-9 |
0.395 |
|
1999 |
Ullrich B, Bagnall DM, Sakai H, Segawa Y. Room-temperature green luminescence and lasing of thin CdS films on glass formed by pulsed-laser-deposition Pacific Rim Conference On Lasers and Electro-Optics, Cleo - Technical Digest. 3: 902-903. |
0.456 |
|
1999 |
Bagnall DM, Ullrich B, Qiu XG, Segawa Y, Sakai H. Microcavity lasing of optically excited cadmium sulfide thin films at room temperature Optics Letters. 24: 1278-1280. |
0.45 |
|
1999 |
Dushkina NM, Ullrich B, Sakai H, Eiju T, Segawa Y. Influence of the c-axis orientation on the optical properties of thin CdS films formed by laser ablation Proceedings of Spie - the International Society For Optical Engineering. 3629: 424-432. |
0.435 |
|
1998 |
Dushkina NM, Ullrich B. Angular dependence of the reflectance and transmittance of CdS films formed by laser ablation Applied Physics Letters. 72: 2150-2152. DOI: 10.1063/1.121305 |
0.397 |
|
1998 |
Ullrich B, Koma A, Löher T, Kobayashi T. Optical and hybrid properties of the ZnSe/InSe/Si heterojunction Solid State Communications. 107: 209-211. |
0.343 |
|
1998 |
Ullrich B. Influence of thermal and electronic modifications of the GaAs bandgap on bistable luminescent light emitted from a thin CdS film Thin Solid Films. 333: 134-136. |
0.38 |
|
1998 |
Ullrich B, Sakai H, Dushkina NM, Ezumi H, Keitoku S, Kobayashi T. The influence of the laser fluence on the transmission features of thin CdS films formed by laser ablation Microelectronic Engineering. 43: 695-700. |
0.382 |
|
1997 |
Ullrich B, Sakai H, Dushkina N, Ezumi H, Keitoku S, Kobayashi T. Luminescence Properties of Thin CdS Films Formed by Laser Ablation. Journal of the Spectroscopical Society of Japan. 46: 245-248. DOI: 10.5111/Bunkou.46.245 |
0.468 |
|
1997 |
Ullrich B, Dushkina NM, Kobayashi T. Bleaching and Spectral Shape Modification of CdS Photocurrent due to He–Ne Laser Pumping Japanese Journal of Applied Physics. 36. DOI: 10.1143/Jjap.36.L682 |
0.459 |
|
1996 |
Ullrich B, Ezumi H, Keitoku S, Kobayashi T. Temperature dependence of reflectance and transmittance at 514.5 nm of CdS films formed by laser ablation Applied Physics Letters. 68: 2985-2986. DOI: 10.1063/1.116671 |
0.535 |
|
1994 |
Ullrich B, Kobayashi T. All-optical absorptive and dispersive bistabilities in luminescence of a thin CdS film Japanese Journal of Applied Physics. 33. DOI: 10.1143/Jjap.33.L1523 |
0.505 |
|
1994 |
Ullrich B, Kobayashi T. All-optical bistability in luminescence of thin CdS films Physica Scripta. 1994: 191-193. DOI: 10.1088/0031-8949/1994/T54/047 |
0.449 |
|
1993 |
Ullrich B. New Concepts for Material Characterizations and Optical Devices: Positive and Negative Hybrid Logics and Self-Induced Photonic Oscillators Japanese Journal of Applied Physics. 32. DOI: 10.1143/Jjap.32.L411 |
0.346 |
|
1993 |
Ullrich B, Kulaç I, Pint H. Photoelectronic properties of YBa2Cu3O6 Canadian Journal of Physics. 71: 512-517. DOI: 10.1139/P93-080 |
0.411 |
|
1992 |
Ullrich B, cc IK, Pint H, Leising G, Kahlert H. Photocurrent in Thin YBa2Cu3O6 Films on Sapphire Japanese Journal of Applied Physics. 31. DOI: 10.1143/Jjap.31.L856 |
0.42 |
|
1991 |
Ullrich B, Bouchenaki C. Bistable Optical Thin CdS Film Devices: All-Optical and Optoelectronic Features Japanese Journal of Applied Physics. 30. DOI: 10.1143/Jjap.30.L1285 |
0.437 |
|
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