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Xiangyang Mei, Ph.D. - Publications

Affiliations: 
2003 University of Toronto, Toronto, ON, Canada 
Area:
Materials Science Engineering
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13 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2004 Zhang G, Zou Q, Sun P, Mei X, Ruda HE. Influence of nitrogen annealing on electrical properties of lead zirconate titanate thin film deposited on titanium metal foil Materials Letters. 58: 706-710. DOI: 10.1016/J.Matlet.2003.06.009  0.473
2003 Guo Q, Mei X, Ruda H, Tanaka T, Nishio M, Ogawa H. Fabrication of Indium Nitride Nanodots Using Anodic Alumina Templates Japanese Journal of Applied Physics. 42: L508-L510. DOI: 10.1143/Jjap.42.L508  0.54
2003 Zhang G, Sun P, Zou Q, Mei X, Ruda HE, Guo Q, Yu X, Ren D, Yan R. Dose Rate Dependence of Electrical Characteristics of Lead Zirconate Titanate Capacitors Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 42: 6491-6495. DOI: 10.1143/Jjap.42.6491  0.448
2003 Wu ZH, Mei X, Kim D, Blumin M, Ruda HE, Liu JQ, Kavanagh KL. Growth, branching, and kinking of molecular-beam epitaxial 〈110〉 GaAs nanowires Applied Physics Letters. 83: 3368-3370. DOI: 10.1063/1.1618018  0.535
2003 Mei X, Blumin M, Sun M, Kim D, Wu ZH, Ruda HE, Guo QX. Highly-ordered GaAs/AlGaAs quantum-dot arrays on GaAs (001) substrates grown by molecular-beam epitaxy using nanochannel alumina masks Applied Physics Letters. 82: 967-969. DOI: 10.1063/1.1544065  0.542
2003 Matsuura N, Simpson TW, Mitchell IV, Mei XY, Morales P, Ruda HE. Ultrahigh-density, nonlithographic, sub-100 nm pattern transfer by ion implantation and selective chemical etching Applied Physics Letters. 81: 4826-4828. DOI: 10.1063/1.1527693  0.599
2003 Mei X, Blumin M, Kim D, Wu Z, Ruda HE. Molecular beam epitaxial growth studies of ordered GaAs nanodot arrays using anodic alumina masks Journal of Crystal Growth. 251: 253-257. DOI: 10.1016/S0022-0248(02)02421-1  0.566
2002 Matsuura N, Simpson TW, McNorgan CP, Mitchell IV, Mei XY, Morales P, Ruda HE. Nanometer-scale pattern transfer using ion implantation Materials Research Society Symposium - Proceedings. 739: 237-242. DOI: 10.1557/Proc-739-H8.3  0.579
2002 Guo Q, Tanaka T, Nishio M, Ogawa H, Mei X, Ruda H. Fabrication of ZnTe Nanohole Arrays by Reactive Ion Etching Using Anodic Alumina Templates Japanese Journal of Applied Physics. 41: L118-L120. DOI: 10.1143/Jjap.41.L118  0.556
2002 Guo Q, Mei X, Ogawa H, Ruda H. Cathodoluminescence Study of Highly Ordered Arrays of InGaAs Quantum Dots Japanese Journal of Applied Physics. 41: 7297-7300. DOI: 10.1143/Jjap.41.7297  0.531
1999 Mei X, Ruda HE, Berdinskihk T, Buchanan M. Characterization of GaP pyramidal textured p-n junctions Solid-State Electronics. 43: 779-783. DOI: 10.1016/S0038-1101(98)00303-7  0.52
1998 Mei X, Ruda HE, Berdiskihk T, Buchanan M. Liquid phase epitaxial growth of GaP layers on textured GaP (1 1 1)B substrates Journal of Crystal Growth. 193: 148-155. DOI: 10.1016/S0022-0248(98)00404-7  0.528
1997 Mei X, Crnatovic A, Jedral LZ, Ruda HE, Lu ZH, Dion M. Liquid-phase epitaxial growth of GaAsxP1 − x layers on GaP substrates Journal of Crystal Growth. 179: 50-56. DOI: 10.1016/S0022-0248(97)00010-9  0.482
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