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Lei Zhuge, Ph.D. - Publications

Affiliations: 
2002 University of Southern California, Los Angeles, CA, United States 
Area:
Electronics and Electrical Engineering
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52 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Zhang HY, He HJ, Zhang Z, Jin CG, Yang Y, Wang YY, Zhuge LJ, Ye C, Wu XM. Structure, optical properties and thermal stability of HfErO films deposited by simultaneous RF and VHF magnetron sputtering Applied Physics a: Materials Science and Processing. 119: 517-524. DOI: 10.1007/s00339-015-8982-x  0.35
2014 Wu M, Huang T, Jin C, Zhuge L, Han Q, Wu X. Effect of multiple frequency H2/ar plasma treatment on the optical, electrical, and structural properties of AZO films Ieee Transactions On Plasma Science. 42: 3687-3690. DOI: 10.1109/TPS.2014.2361640  0.305
2013 Zhang HY, Yang XM, Yu T, Jin CG, Ye C, Zhuge LJ, Wu XM. Role of high-frequency power in C4F8 dual-frequency capacitively coupled plasmas treating high-k HfO2 films Journal of Physics D: Applied Physics. 46. DOI: 10.1088/0022-3727/46/43/435102  0.308
2013 Yu T, Jin CG, Zhang HY, Zhuge LJ, Wu ZF, Wu XM, Feng ZC. Effect of Ta incorporation on the microstructure, electrical and optical properties of Hf1-xTaxO high-k film prepared by dual ion beam sputtering deposition Vacuum. 92: 58-64. DOI: 10.1016/j.vacuum.2012.11.007  0.316
2013 Wang F, Wu MZ, Wang YY, Yu YM, Wu XM, Zhuge LJ. Influence of thickness and annealing temperature on the electrical, optical and structural properties of AZO thin films Vacuum. 89: 127-131. DOI: 10.1016/j.vacuum.2012.02.040  0.341
2013 Zhou F, Wang Q, Yue B, Wu X, Zhuge L, Cheng X. Mechanical properties and bonding structure of boron carbon nitride films synthesized by dual ion beam sputtering Materials Chemistry and Physics. 138: 215-224. DOI: 10.1016/j.matchemphys.2012.11.049  0.323
2012 Jin CG, Yu T, Bo Y, Zhao Y, Zhang HY, Dong YJ, Wu XM, Zhuge LJ, Ge SB. Characterization of Hafnium-Zirconium-Oxide-Nitride films grown by ion beam assisted deposition Vacuum. 86: 1078-1082. DOI: 10.1016/j.vacuum.2011.10.001  0.35
2012 Jin C, Yu T, Wu Z, Wu X, Zhuge L. Effect of low energy ion bombardment on structure and photoluminescence characterization of Al-doped ZnO thin films Thin Solid Films. 524: 39-43. DOI: 10.1016/j.tsf.2012.09.055  0.306
2012 Yu T, Jin C, Yang X, Dong Y, Zhang H, Zhuge L, Wu X, Wu Z. The structure and electrical properties of HfTaON high-k films prepared by DIBSD Applied Surface Science. 258: 2953-2958. DOI: 10.1016/j.apsusc.2011.11.015  0.363
2011 Jin CG, Yu T, Zhao Y, Bo Y, Wu XM, Zhuge LJ. Room temperature deposition of amorphous SiC thin films using low energy ion bombardment Physica E: Low-Dimensional Systems and Nanostructures. 43: 1863-1866. DOI: 10.1016/j.physe.2011.06.029  0.319
2011 Yang XM, Yu T, Wu XM, Zhuge LJ, Ge SB, He JJ. Study on changes in the structure of HfSiO and HfSiON dielectrics with different annealing temperature by photoelectron spectroscopy Applied Surface Science. 257: 9277-9281. DOI: 10.1016/j.apsusc.2011.04.143  0.33
2011 Chen XL, Yu T, Wu XM, Dong YJ, Zhuge LJ. Study on structure and electrical properties of high-k Ta2O5 gate dielectric Gongneng Cailiao/Journal of Functional Materials. 42.  0.315
2010 Hong B, Wu X, Zhuge L, Wu Z, Zhou F. Influence of N2 proportion on mechanical properties of SiCN thin films prepared by DIBSD Advanced Materials Research. 97: 1243-1247. DOI: 10.4028/www.scientific.net/AMR.97-101.1243  0.319
2010 Wu Z, Cao Y, Wu X, Zhuge L. Optical and electronic properties of Mn-doped ZnO films synthesized by RF magnetron sputtering Advanced Materials Research. 139: 82-83. DOI: 10.4028/www.scientific.net/AMR.139-141.80  0.307
2010 Jin CG, Y.Gao, Wu XM, Cui ML, Zhuge LJ, Chen ZC, Hong B. Structural and magnetic properties of transition metal doped ZnO films Thin Solid Films. 518: 2152-2156. DOI: 10.1016/j.tsf.2009.09.047  0.317
2010 Zhuge LJ, Wu XM, Wu ZF, Yang XM, Chen XM, Chen Q. Structure and deep ultraviolet emission of Co-doped ZnO films with Co3O4 nano-clusters Materials Chemistry and Physics. 120: 480-483. DOI: 10.1016/j.matchemphys.2009.11.036  0.327
2010 Wu ZF, Wu XM, Zhuge LJ, Hong B, Yang XM, Yu T, He JJ, Chen Q. Effect of Mn doping on the nanostructure and optical properties of ZnO films synthesized by magnetron sputtering Applied Surface Science. 256: 2259-2262. DOI: 10.1016/j.apsusc.2009.10.049  0.309
2009 Chen X, Zhuge L, Wu X, Wu Z. Room temperature ferromagnetism and structure of Zn1-xCu xO films synthesized by radio frequency magnetron sputtering Plasma Science and Technology. 11: 582-586. DOI: 10.1088/1009-0630/11/5/13  0.305
2009 Zhuge LJ, Wu XM, Wu ZF, Chen XM, Meng YD. Effect of defects on room-temperature ferromagnetism of Cr-doped ZnO films Scripta Materialia. 60: 214-217. DOI: 10.1016/j.scriptamat.2008.10.002  0.322
2009 Yang XM, Wu XM, Zhuge LJ, Zhou F. Influence of assisted ion energy on surface roughness and mechanical properties of boron carbon nitride films synthesized by DIBSD Applied Surface Science. 255: 4279-4282. DOI: 10.1016/j.apsusc.2008.11.025  0.312
2009 Jin CG, Wu XM, Zhuge LJ. The structure and photoluminescence properties of Cr-doped SiC films Applied Surface Science. 255: 4711-4715. DOI: 10.1016/j.apsusc.2008.05.133  0.336
2009 Jiang P, Wu XM, Zhuge LJ, Wu ZF. Structural and optical properties of ZnO films Gongneng Cailiao/Journal of Functional Materials. 40: 560-563.  0.334
2008 Jin CG, Wu XM, Zhuge LJ. Room-temperature growth of SiC thin films by dual-Ion-Beam sputtering deposition Research Letters in Physical Chemistry. 2008. DOI: 10.1155/2008/760650  0.313
2008 Ju J, Wu XM, Zhuge LJ. Study on the structure and optical properties of Zn1-xCr xO films by rf magnetron sputtering technique International Journal of Modern Physics B. 22: 5279-5287. DOI: 10.1142/S021797920804939X  0.332
2008 Jin CG, Wu XM, Zhuge LJ, Sha ZD, Hong B. Electric and magnetic properties of Cr-doped SiC films grown by dual ion beam sputtering deposition Journal of Physics D: Applied Physics. 41. DOI: 10.1088/0022-3727/41/3/035005  0.336
2008 Wang XF, Wu XM, Zhuge LJ. Structural and optical properties of Zn1-xGuxO films Gongneng Cailiao/Journal of Functional Materials. 39: 191-193.  0.336
2007 Wang J, Wu XM, Zhuge LJ. The structure and phase change of a molybdenum grid coated with silicon and carbon composite thin films annealed at high temperature Vacuum. 81: 890-893. DOI: 10.1016/j.vacuum.2006.10.009  0.331
2007 Chen ZC, Zhuge LJ, Wu XM, Meng YD. Initial study on the structure and optical properties of Zn1-xFexO films Thin Solid Films. 515: 5462-5465. DOI: 10.1016/j.tsf.2007.01.015  0.342
2007 Jin C, Wu X, Zhuge L, Sha Z. The structure and photoluminescence properties of ZnO/SiC multilayer film on Si substrate Frontiers of Materials Science in China. 1: 158-161. DOI: 10.1007/s11706-007-0028-7  0.333
2006 Chen AJ, Wu XM, Sha ZD, Zhuge LJ, Meng YD. Structure and photoluminescence properties of Fe-doped ZnO thin films Journal of Physics D: Applied Physics. 39: 4762-4765. DOI: 10.1088/0022-3727/39/22/004  0.336
2006 Sha ZD, Wu XM, Zhuge LJ. The structure and optical properties of SiC film on Si (111) substrate with a ZnO buffer layer by RF-magnetron sputtering technique Physics Letters, Section a: General, Atomic and Solid State Physics. 355: 228-232. DOI: 10.1016/j.physleta.2006.01.105  0.361
2006 Sha ZD, Wu XM, Zhuge LJ, Meng YD. Initial study on the structure and photoluminescence properties of SiC films doped with Co Physica E: Low-Dimensional Systems and Nanostructures. 35: 38-41. DOI: 10.1016/j.physe.2006.05.009  0.345
2006 Sha ZD, Wang J, Chen ZC, Chen AJ, Zhou ZY, Wu XM, Zhuge LJ. Initial study on the structure and optical properties of ZnO film on Si(1 1 1) substrate with a SiC buffer layer Physica E: Low-Dimensional Systems and Nanostructures. 33: 263-267. DOI: 10.1016/j.physe.2006.03.138  0.374
2006 Sha ZD, Wu XM, Zhuge LJ. Initial study on the structure and photoluminescence properties of SiC films doped with Al Applied Surface Science. 252: 4340-4344. DOI: 10.1016/j.apsusc.2005.10.013  0.364
2006 Li Q, Liang J, Li DG, Deng LN, Wu XM, Zhuge LJ. Luminescence characteristic of amorphous SiOx:C films Gongneng Cailiao Yu Qijian Xuebao/Journal of Functional Materials and Devices. 12: 192-196.  0.339
2006 Qu FJ, Xu H, Wu XM, Zhuge LJ. Origin of intense yellow-light emission from amorphous silicon oxynitride thin films prepared by dual ion beam sputtering Gongneng Cailiao/Journal of Functional Materials. 37: 492-495.  0.371
2006 Sha ZD, Wu XM, Zhuge LJ. Influence of annealing temperature on the structure and photoluminescence properties of SiC films Weixi Jiagong Jishu/Microfabrication Technology. 23-26.  0.351
2006 Li Q, Li D, Deng L, Liu Y, Zhuge L, Wu X. Microstructures and luminescence of SiOxNy film grown by dual ion beam sputtering Zhenkong Kexue Yu Jishu Xuebao/Journal of Vacuum Science and Technology. 26: 57-60.  0.312
2005 Sha ZD, Wu XM, Zhuge LJ. Structure and photoluminescence properties of SiC films synthesized by the RF-magnetron sputtering technique Vacuum. 79: 250-254. DOI: 10.1016/j.vacuum.2005.04.003  0.339
2005 Sha ZD, Wu XM, Zhuge LJ. The structure and photoluminescence properties of SiC films doped with Al Physics Letters, Section a: General, Atomic and Solid State Physics. 346: 186-192. DOI: 10.1016/j.physleta.2005.07.048  0.341
2004 Zhuge LJ, Wu XM, Li Q, Wang WB, Xiang SL. Origin of violet photoluminescence in SiO2 films co-doped with silicon and carbon Physica E: Low-Dimensional Systems and Nanostructures. 23: 86-91. DOI: 10.1016/j.physe.2004.01.002  0.322
2004 Cheng J, Wu X, Zhuge L. Intense yellow photoluminescence from silicon oxynitride films prepared by dual ion beam sputtering Plasma Science and Technology. 6: 2237-2240. DOI: 10.1016/j.lfs.2003.09.055  0.352
2004 Cheng J, Wu X, Zhuge L. Formation of nc-Ge and nc-Si particles in Ge-SiO2 and Si-SiO2 thin films Zhenkong Kexue Yu Jishu Xuebao/Vacuum Science and Technology. 24: 245-248.  0.301
2004 Li Q, Zhuge L, Wu X, Xiang S. Characteristics of photoluminescence and structure of amorphous Zhenkong Kexue Yu Jishu Xuebao/Vacuum Science and Technology. 24: 92-94.  0.324
2002 Ye CN, Wu XM, Tang NY, Zhuge LJ, Yao WG, Chen J, Dong YM, Yu YH. Origin of photoluminescence peaks in Ge-SiO2 thin films Science and Technology of Advanced Materials. 3: 257-260. DOI: 10.1016/S1468-6996(02)00024-4  0.366
2002 Wu XM, Zhuge LJ, Tang NY, Ye CN, Ning ZY, Yao WG, Dong YM, Yu YH. Strong green electroluminescene from silicon based oxide films Surface and Coatings Technology. 154: 82-87. DOI: 10.1016/S0257-8972(01)01704-2  0.316
2002 Zhuge LJ, Yao WG, Wu XM, Wang WB. Effects of substrate and substrate temperature on the synthesis and characterization of Fe4N thin films Gongneng Cailiao/Journal of Functional Materials. 33: 477-478+481.  0.317
2002 Tang NY, Ye CN, Wu XM, Zhuge LJ, Yu YH, Yao WG. Influence of annealing temperature on the structure of Ge-SiO2 thin films Gongneng Cailiao/Journal of Functional Materials. 33: 324-325+331.  0.331
2002 Ye CN, Tang NY, Wu XM, Zhuge LJ, Yu YH, Yao WG. Study on structure and photoluminescence of SiO2 films containing nc-Ge Journal of Functional Materials and Devices. 8: 103.  0.318
2001 Wu XM, Zhuge LJ, Tang NY, Ye CN, Ning ZY, Yao WG. Annealing temperature dependence of photoluminescence from silicon-rich silica films Plasma Science and Technology. 3: 891-895. DOI: 10.1088/1009-0630/3/4/009  0.348
2001 Wu XM, Dong YM, Zhuge LJ, Ye CN, Tang NY, Ning ZY, Yao WG, Yu YH. Room-temperature visible electroluminescence of Al-doped silicon oxide films Applied Physics Letters. 78: 4121-4123. DOI: 10.1063/1.1382629  0.325
2001 Dong Y, Chen J, Tang N, Ye C, Wu X, Zhuge L, Yao W. Photoluminescence from Ge-SiO2 thin films and its mechanism Chinese Science Bulletin. 46: 1268-1271.  0.347
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