Yibo Nian, Ph.D. - Publications

Affiliations: 
2006 University of Houston, Houston, TX, United States 
Area:
Materials Science Engineering, Electronics and Electrical Engineering

6 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Nian Y, Ding M, Hu S, He H, Cheng S, Yi L, Li Y, Wang Y. Testosterone replacement therapy improves health-related quality of life for patients with late-onset hypogonadism: a meta-analysis of randomized controlled trials. Andrologia. PMID 27389320 DOI: 10.1111/and.12630  0.36
2012 Lu L, Chen JC, Li Y, Qing C, Wang YY, Nian Y, Qiu MH. Studies on the constituents of cimicifuga foetida collected in guizhou province and their cytotoxic activities Chemical and Pharmaceutical Bulletin. 60: 571-577. PMID 22689393  0.36
2008 Ignatiev A, Wu NJ, Chen X, Nian YB, Papagianni C, Liu SQ, Strozier J. Resistance switching in oxide thin films Phase Transitions. 81: 791-806. DOI: 10.1080/01411590802212374  0.4
2007 Nian YB, Strozier J, Wu NJ, Chen X, Ignatiev A. Evidence for an oxygen diffusion model for the electric pulse induced resistance change effect in transition-metal oxides. Physical Review Letters. 98: 146403. PMID 17501295 DOI: 10.1103/PhysRevLett.98.146403  0.48
2006 Chen X, Strozier J, Wu NJ, Ignatiev A, Nian YB. A study of the symmetry properties and multi-state nature of perovskite oxide-based electrical pulse induced resistance-change devices New Journal of Physics. 8. DOI: 10.1088/1367-2630/8/10/229  0.52
2006 Ignatiev A, Wu NJ, Liu SQ, Chen X, Nian YB, Papaginanni C, Strozier J, Xing ZW. Resistance switching memory effect in transition metal oxide thin films 7th Annual Non-Volatile Memory Technology Symposium, Nvmts. 100-103.  0.52
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