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Ken Hoshino, Ph.D. - Publications

Affiliations: 
2012 Oregon State University, Corvallis, OR 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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9 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Hoshino K, Wager J. Negative bias illumination stress assessment of indium gallium zinc oxide thin‐film transistors Journal of the Society For Information Display. 23: 187-195. DOI: 10.1002/Jsid.267  0.733
2013 Hoshino K, Yeh B, Wager JF. Impact of humidity on the electrical performance of amorphous oxide semiconductor thin-film transistors Journal of the Society For Information Display. 21: 310-316. DOI: 10.1002/Jsid.184  0.712
2012 Sundholm ES, Presley RE, Hoshino K, Knutson CC, Hoffman RL, Mourey DA, Keszler DA, Wager JF. Passivation of amorphous oxide semiconductors utilizing a zinc-tin-silicon-oxide barrier layer Ieee Electron Device Letters. 33: 836-838. DOI: 10.1109/Led.2012.2191530  0.626
2012 Wager JF, Hoshino K, Sundholm ES, Presley RE, Ravichandran R, Knutson CC, Keszler DA, Hoffman RL, Mourey DA, Robertson J. A framework for assessing amorphous oxide semiconductor thin-film transistor passivation Journal of the Society For Information Display. 20: 589-595. DOI: 10.1002/Jsid.120  0.619
2011 Waggoner T, Triska J, Hoshino K, Wager JF, Conley JF. Zirconium oxide-aluminum oxide nanolaminate gate dielectrics for amorphous oxide semiconductor thin-film transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3609254  0.747
2011 Jiang K, Anderson JT, Hoshino K, Li D, Wager JF, Keszler DA. Low-energy path to dense HfO2 thin films with aqueous precursor Chemistry of Materials. 23: 945-952. DOI: 10.1021/Cm102082J  0.573
2010 Hoshino K, Wager JF. Operating temperature trends in amorphous in-Ga-Zn-O thin-film transistors Ieee Electron Device Letters. 31: 818-820. DOI: 10.1109/Led.2010.2049980  0.569
2009 Hoshino K, Hong D, Chiang HQ, Wager JF. Constant-voltage-bias stress testing of a-IGZO thin-film transistors Ieee Transactions On Electron Devices. 56: 1365-1370. DOI: 10.1109/Ted.2009.2021339  0.69
2000 Hoshino K, Kitamura T. Effect of preparation conditions of titanium oxide on dinitrogen fixation to ammonium salt Chemistry Letters. 1120-1121.  0.343
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