Year |
Citation |
Score |
2017 |
Khan A, Lee S, Jang T, Xiong Z, Zhang C, Tang J, Guo LJ, Li WD. Scalable Solution-processed Fabrication Strategy for High-performance, Flexible, Transparent Electrodes with Embedded Metal Mesh. Journal of Visualized Experiments : Jove. PMID 28671661 DOI: 10.3791/56019 |
0.493 |
|
2017 |
Chen M, Wang Y, Shepherd N, Huard C, Zhou J, Guo LJ, Lu W, Liang X. Abnormal Multiple Charge Memory States in Exfoliated Few-Layer WSe2 Transistors. Acs Nano. PMID 28071898 DOI: 10.1021/Acsnano.6B08156 |
0.488 |
|
2016 |
Wang PJ, Xie CB, Sun FH, Guo LJ, Dai M, Cheng X, Ma YX. Molecular Characteristics of Methicillin-Resistant Staphylococcus epidermidis on the Abdominal Skin of Females before Laparotomy. International Journal of Molecular Sciences. 17. PMID 27338374 DOI: 10.3390/ijms17060992 |
0.339 |
|
2016 |
Khan A, Lee S, Jang T, Xiong Z, Zhang C, Tang J, Guo LJ, Li WD. High-Performance Flexible Transparent Electrode with an Embedded Metal Mesh Fabricated by Cost-Effective Solution Process. Small (Weinheim An Der Bergstrasse, Germany). PMID 27027390 DOI: 10.1002/Smll.201600309 |
0.481 |
|
2014 |
Wi S, Kim H, Chen M, Nam H, Guo LJ, Meyhofer E, Liang X. Enhancement of photovoltaic response in multilayer MoS2 induced by plasma doping. Acs Nano. 8: 5270-81. PMID 24783942 DOI: 10.1021/Nn5013429 |
0.508 |
|
2010 |
Cheng LJ, Guo LJ. Nanofluidic diodes. Chemical Society Reviews. 39: 923-38. PMID 20179815 DOI: 10.1039/b822554k |
0.526 |
|
2010 |
Cheng L, Guo LJ. Entrance effect on ion transport in nanochannels Microfluidics and Nanofluidics. 9: 1033-1039. DOI: 10.1007/S10404-010-0621-4 |
0.457 |
|
2009 |
Kim T, Cheng LJ, Kao MT, Hasselbrink EF, Guo L, Meyhöfer E. Biomolecular motor-driven molecular sorter. Lab On a Chip. 9: 1282-5. PMID 19370249 DOI: 10.1039/B900753A |
0.461 |
|
2009 |
Cheng LJ, Guo LJ. Ionic current rectification, breakdown, and switching in heterogeneous oxide nanofluidic devices. Acs Nano. 3: 575-84. PMID 19220010 DOI: 10.1021/nn8007542 |
0.55 |
|
2007 |
Cheng LJ, Guo LJ. Rectified ion transport through concentration gradient in homogeneous silica nanochannels. Nano Letters. 7: 3165-71. PMID 17894519 DOI: 10.1021/nl071770c |
0.533 |
|
2007 |
Chao CY, Ashkenazi S, Huang SW, O'Donnell M, Guo LJ. High-frequency ultrasound sensors using polymer microring resonators. Ieee Transactions On Ultrasonics, Ferroelectrics, and Frequency Control. 54: 957-65. PMID 17523560 DOI: 10.1109/Tuffc.2007.341 |
0.512 |
|
2005 |
Cheng LJ, Kao MT, Meyhöfer E, Guo LJ. Highly efficient guiding of microtubule transport with imprinted CYTOP nanotracks. Small (Weinheim An Der Bergstrasse, Germany). 1: 409-14. PMID 17193465 DOI: 10.1002/Smll.200400109 |
0.449 |
|
2004 |
Chao C, Guo L. Reduction of Surface Scattering Loss in Polymer Microrings Using Thermal-Reflow Technique Ieee Photonics Technology Letters. 16: 1498-1500. DOI: 10.1109/Lpt.2004.827413 |
0.518 |
|
2002 |
Rokhinson LP, Guo LJ, Chou SY, Tsui DC, Eisenberg E, Berkovits R, Altshuler BL. Coherent electron transport in a Si quantum dot dimer. Physical Review Letters. 88: 186801. PMID 12005708 DOI: 10.1103/Physrevlett.88.186801 |
0.568 |
|
2002 |
Cheng X, Hong Y, Kanicki J, Guo LJ. High-resolution organic polymer light-emitting pixels fabricated by imprinting technique Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2877-2880. DOI: 10.1116/1.1515307 |
0.405 |
|
2001 |
Rokhinson LP, Guo LJ, Chou SY, Tsui DC. Magnetically induced reconstruction of the ground state in a few-electron Si quantum dot. Physical Review Letters. 87: 166802. PMID 11690224 DOI: 10.1103/Physrevlett.87.166802 |
0.533 |
|
2000 |
Rokhinson LP, Guo LJ, Chou SY, Tsui DC. Formation of unintentional dots in small Si nanostructures Superlattices and Microstructures. 28: 413-417. DOI: 10.1006/Spmi.2000.0942 |
0.584 |
|
1998 |
Rudin AM, Guo LJ, Glazman LI, Chou SY. Charge-ring model for the charge-induced confinement enhancement in stacked quantum-dot transistors Applied Physics Letters. 73: 3429-3431. DOI: 10.1063/1.122787 |
0.575 |
|
1998 |
Zhuang L, Guo L, Chou SY. Silicon single-electron quantum-dot transistor switch operating at room temperature Applied Physics Letters. 72: 1205-1207. DOI: 10.1063/1.121014 |
0.693 |
|
1998 |
Guo LJ, Chou SY. Stacked quantum dot transistor and charge-induced confinement enhancement Electronics Letters. 34: 1030-1031. DOI: 10.1049/El:19980717 |
0.592 |
|
1997 |
Guo L, Leobandung E, Chou SY. A silicon single-electron transistor memory operating at room temperature Science. 275: 649-651. PMID 9005847 DOI: 10.1126/Science.275.5300.649 |
0.584 |
|
1997 |
Chou SY, Krauss PR, Zhang W, Guo L, Zhuang L. Sub-10 nm imprint lithography and applications Journal of Vacuum Science & Technology B. 15: 2897-2904. DOI: 10.1116/1.589752 |
0.663 |
|
1997 |
Guo L, Leobandung E, Zhuang L, Chou SY. Fabrication and characterization of room temperature silicon single electron memory Journal of Vacuum Science & Technology B. 15: 2840-2843. DOI: 10.1116/1.589740 |
0.682 |
|
1997 |
Leobandung E, Gu J, Guo L, Chou SY. Wire-channel and wrap-around-gate metal–oxide–semiconductor field-effect transistors with a significant reduction of short channel effects Journal of Vacuum Science & Technology B. 15: 2791-2794. DOI: 10.1116/1.589729 |
0.6 |
|
1997 |
Guo L, Leobandung E, Chou SY. Erratum: “A room-temperature silicon single-electron metal–oxide–semiconductor memory with nanoscale floating-gate and ultranarrow channel” [Appl. Phys. Lett. 70, 850 (1997)] Applied Physics Letters. 71: 558-558. DOI: 10.1063/1.120560 |
0.544 |
|
1997 |
Guo L, Krauss PR, Chou SY. Nanoscale silicon field effect transistors fabricated using imprint lithography Applied Physics Letters. 71: 1881-1883. DOI: 10.1063/1.119426 |
0.597 |
|
1997 |
Guo L, Leobandung E, Chou SY. A room-temperature silicon single-electron metal–oxide–semiconductor memory with nanoscale floating-gate and ultranarrow channel Applied Physics Letters. 70: 850-852. DOI: 10.1063/1.118236 |
0.593 |
|
1995 |
Leobandung E, Guo L, Wang Y, Chou SY. Single electron and hole quantum dot transistors operating above 110 K Journal of Vacuum Science & Technology B. 13: 2865-2868. DOI: 10.1116/1.588306 |
0.581 |
|
1995 |
Leobandung E, Guo L, Wang Y, Chou SY. Observation of quantum effects and Coulomb blockade in silicon quantum-dot transistors at temperatures over 100 K Applied Physics Letters. 67: 938-940. DOI: 10.1063/1.114701 |
0.586 |
|
1995 |
Leobandung E, Guo L, Chou SY. Single hole quantum dot transistors in silicon Applied Physics Letters. 67: 2338-2340. DOI: 10.1063/1.114337 |
0.588 |
|
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