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Walter Gomes - Publications

Affiliations: 
Ghent University, Ghent, Vlaanderen, Belgium 
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30 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2006 Huygens I, Gomes W, Strubbe K. Defect Luminescence at n-GaN Electrodes A Comparative Study Between n-GaN Grown on Sapphire Substrates and on Si Substrates Journal of the Electrochemical Society. 153: 72. DOI: 10.1149/1.2135218  0.365
2005 Huygens I, Gomes W, Strubbe K. Photocurrent multiplication at n-GaN electrodes in formic acid solutions Electrochimica Acta. 50: 2919-2926. DOI: 10.1016/J.Electacta.2004.11.041  0.403
2003 Huygens I, Gomes W, Theuwis A, Strubbe K. Subbandgap Photoluminescence and Electroluminescence at n-GaN Electrodes in Aqueous Solutions Journal of the Electrochemical Society. 150. DOI: 10.1149/1.1603251  0.4
2003 Huygens I, Theuwis A, Gomes W, Strubbe K. A (Photo-)Electrochemical Study on n-GaN in Aqueous Solutions Physica Status Solidi (C). 448-452. DOI: 10.1002/Pssc.200390085  0.434
2002 Theuwis A, Strubbe K, Depestel L, Gomes W. A photoelectrochemical study of InxGa1-xN films Journal of the Electrochemical Society. 149. DOI: 10.1149/1.1468647  0.318
2002 Huygens I, Theuwis A, Gomes W, Strubbe K. Photoelectrochemical reactions at the n-GaN electrode in 1 M H2SO4 and in acidic solutions containing Cl− ions Physical Chemistry Chemical Physics. 4: 2301-2306. DOI: 10.1039/B110839P  0.412
2000 Huygens I, Strubbe K, Gomes W. Electrochemistry and Photoetching of n‐GaN Journal of the Electrochemical Society. 147: 1797-1802. DOI: 10.1149/1.1393436  0.413
2000 Hens Z, Gomes W. Photoanodic Dissolution of n-InP: An Electrochemical Impedance Study Journal of Physical Chemistry B. 104: 7725-7734. DOI: 10.1021/Jp0010740  0.415
1999 Hens Z, Gomes W. On the electrochemical impedance of InP and GaAs electrodes in indifferent electrolyte. Part 2. Experimental study on the factors influencing the frequency dispersion Physical Chemistry Chemical Physics. 1: 3617-3625. DOI: 10.1039/A903463C  0.378
1999 Hens Z, Gomes W. On the electrochemical impedance of InP and GaAs electrodes in indifferent electrolyte. Part 1. Analytical description of the frequency dispersion Physical Chemistry Chemical Physics. 1: 3607-3615. DOI: 10.1039/A901265F  0.351
1999 Hens Z, Gomes W. The Electrochemical Impedance of One-Equivalent Electrode Processes at Dark Semiconductor/Redox Electrodes Involving Charge Transfer through Surface States. 2. The n-GaAs/Fe3+ System as an Experimental Example Journal of Physical Chemistry B. 103: 130-138. DOI: 10.1021/Jp9827678  0.409
1998 Vereecken P, Strubbe K, Gomes W. The Electrochemical Behavior of p‐Type (100) GaAs in Copper Sulfate Solution Influence of Surface Conditions Journal of the Electrochemical Society. 145: 3075-3082. DOI: 10.1149/1.1838767  0.31
1998 Hens Z, Gomes W. The electrochemical impedance of reversible semiconductor electrodes : The n-InP/methylviologen electrode as an example Electrochimica Acta. 43: 2577-2587. DOI: 10.1016/S0013-4686(97)10184-0  0.422
1997 Theuwis A, Gomes W. A fundamental study on n- and p-In0.53Ga0.47As in H2O2 solution : electrochemical behavior and selective etching vs. InP Journal of the Electrochemical Society. 144: 1390-1398. DOI: 10.1149/1.1837601  0.324
1997 Hens Z, Gomes W. On The Diffusion Impedance At Semiconductor Electrodes Journal of Physical Chemistry B. 101: 5814-5821. DOI: 10.1021/Jp970283Q  0.412
1997 Vereecken P, Strubbe K, Gomes W. An improved procedure for the processing of chronoamperometric data: Application to the electrodeposition of Cu upon (100) n-GaAs Journal of Electroanalytical Chemistry. 433: 19-31. DOI: 10.1016/S0022-0728(97)00195-2  0.363
1997 Hens Z, Gomes W. Electrochemical impedance spectroscopy at semiconductor electrodes: the recombination resistance revisited Journal of Electroanalytical Chemistry. 437: 77-83. DOI: 10.1016/S0022-0728(97)00092-2  0.414
1996 Vermeir I, Gomes W. The Etching of InP by Acidic Iodine Solutions A Kinetic and Electrochemical Study Journal of the Electrochemical Society. 143: 1319-1325. DOI: 10.1149/1.1836637  0.427
1996 Verpoort P, Vermeir I, Gomes W. Investigation on the electrochemistry and etching at the (100) GaAs ¦ HIO3 interface Journal of Electroanalytical Chemistry. 411: 67-72. DOI: 10.1016/0022-0728(96)04567-6  0.431
1996 Theuwis A, Vermeir I, Gomes W. Chemical and electrochemical interaction of acidic H2O2 solutions with (100) InP. Journal of Electroanalytical Chemistry. 410: 31-42. DOI: 10.1016/0022-0728(96)04532-9  0.416
1996 Gomes W, Vanmaekelbergh D. Impedance spectroscopy at semiconductor electrodes: Review and recent developments Electrochimica Acta. 41: 967-973. DOI: 10.1016/0013-4686(95)00427-0  0.55
1995 Verpoort P, Vermeir I, Gomes W. Fundamental Study on the Selective Etching of Al0.25Ga0.75As Versus GaAs in Acidic Iodine Solutions Journal of the Electrochemical Society. 142: 3589-3595. DOI: 10.1149/1.2050028  0.377
1994 Vermeir I, Gomes W. On the etching of InP in alkaline K3Fe(CN)6 solutions Journal of Electroanalytical Chemistry. 365: 59-69. DOI: 10.1016/0022-0728(93)02989-U  0.462
1993 Strubbe K, Gomes W. Bromine‐Methanol as an Etchant for Semiconductors: A Fundamental Study on GaP II . Interaction Between Chemical and Anodic Etching of p‐Type Journal of the Electrochemical Society. 140: 3301-3305. DOI: 10.1149/1.2221027  0.422
1993 Strubbe K, Gomes W. Bromine‐Methanol as an Etchant for Semiconductors: A Fundamental Study on GaP I . Etching Behavior of n‐ and p‐Type Journal of the Electrochemical Society. 140: 3294-3300. DOI: 10.1149/1.2221026  0.346
1993 Strubbe K, Gomes W. The effect of high LiCl concentrations upon the competition between anodic decomposition and stabilization of the n-GaAs/Fe2+ electrode Journal of Electroanalytical Chemistry. 349: 429-441. DOI: 10.1016/0022-0728(93)80188-N  0.414
1992 Strubbe K, Goossens HH, Gomes WP. The role of water activity in the competition between anodic decomposition and stabilization of the GaP/Fe2+ electrode Electrochimica Acta. 37: 1343-1350. DOI: 10.1016/0013-4686(92)87005-K  0.394
1992 Goossens HH, Gomes WP. (Photo)electrochemistry: a suitable tool for investigating wet etching processes on III-V semicondutors Electrochimica Acta. 37: 811-826. DOI: 10.1016/0013-4686(92)85034-I  0.354
1982 Madou M, Brondeel P, Gomes W, Hanselaer P, Cardon F. Investigation on photoelectrochemical cells based upon silicon/methanol interfaces. Part 1: n-type Si Solar Energy Materials. 7: 33-42. DOI: 10.1016/0165-1633(82)90093-4  0.347
1978 Vervaet A, Gomes W, Cardon F. Some Electrochemical Processes at the n- and p-InP Electrodes. Journal of Electroanalytical Chemistry. 91: 133-136. DOI: 10.1016/S0022-0728(78)80257-5  0.403
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