Wonwoo Lee, Ph.D. - Publications
Affiliations: | 2006 | University of Alabama, Birmingham, Birmingham, AL, United States |
Area:
Materials Science EngineeringYear | Citation | Score | |||
---|---|---|---|---|---|
2007 | Mitchel WC, Mitchell WD, Landis G, Smith HE, Lee W, Zvanut ME. Vanadium donor and acceptor levels in semi-insulating 4H - And 6H-SiC Journal of Applied Physics. 101. DOI: 10.1063/1.2407263 | 0.64 | |||
2007 | Lee W, Zvanut ME. A study of deep defect levels in semi-insulating SiC using optical admittance spectroscopy Journal of Electronic Materials. 36: 623-628. DOI: 10.1007/S11664-007-0100-1 | 0.63 | |||
2006 | Lee W, Zvanut ME. A study of V3+/4+ levels in semi-insulating 6H-SiC using optical admittance and electron paramagnetic resonance spectroscopies Materials Research Society Symposium Proceedings. 911: 231-235. DOI: 10.1557/Proc-0911-B06-05 | 0.621 | |||
2006 | Mitchel WC, Mitchell WD, Smith HE, Zvanut ME, Lee W. Electrical measurement of the vanadium acceptor level in 4H- and 6H-SiC Materials Research Society Symposium Proceedings. 911: 225-230. DOI: 10.1557/Proc-0911-B05-06 | 0.63 | |||
2006 | Zvanut ME, Lee W, Mitchel WC, Mitchell WD, Landis G. The acceptor level for vanadium in 4H and 6H SiC Physica B: Condensed Matter. 376: 346-349. DOI: 10.1016/J.Physb.2005.12.089 | 0.637 | |||
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