Year |
Citation |
Score |
2014 |
Mudholkar M, Ahmed S, Ericson MN, Frank SS, Britton CL, Mantooth HA. Datasheet driven silicon carbide power MOSFET model Ieee Transactions On Power Electronics. 29: 2220-2228. DOI: 10.1109/Tpel.2013.2295774 |
0.306 |
|
2012 |
Tham KV, Ulaganathan C, Nambiar N, Greenwell RL, Britton CL, Ericson MN, Holleman J, Blalock BJ. PVT compensation for wilkinson single-slope measurement systems Ieee Transactions On Nuclear Science. 59: 2444-2450. DOI: 10.1109/Tns.2012.2212722 |
0.355 |
|
2010 |
Ulaganathan C, Nambiar N, Cornett K, Greenwell RL, Yager JA, Prothro BS, Tham K, Chen S, Broughton RS, Fu G, Blalock BJ, Britton CL, Ericson MN, Mantooth HA, Mojarradi MM, et al. A SiGe BiCMOS instrumentation channel for extreme environment applications Vlsi Design. 2010. DOI: 10.1155/2010/156829 |
0.32 |
|
2008 |
Zuoliang N, Blalock BJ, Ericson MN, Oliver J, Berg RV, O'Connor P, Britton CL. A High voltage CCD Sensor Control Chip for the Large Synoptic Survey Telescope (LSST) Midwest Symposium On Circuits and Systems. 535-537. DOI: 10.1109/MWSCAS.2008.4616854 |
0.364 |
|
2005 |
Ericson MN, Hasanuzzaman M, Terry SC, Britton CL, Ohme B, Frank SS, Richmond JA, Blalock BJ. 1/f Noise and DC characterization of partially depleted SOI N- and P-MOSFETs from 20°C-250°C Ieee Aerospace Conference Proceedings. 2005. DOI: 10.1109/AERO.2005.1559566 |
0.473 |
|
2004 |
Ericson MN, Bobrek M, Bobrek A, Britton CL, Rochelle JM, Blalock BJ, Schultz RL. A high resolution, extended temperature sigma delta ADC in 3.3V 0.μm SOS-CMOS Ieee Aerospace Conference Proceedings. 4: 2608-2615. DOI: 10.1109/AERO.2004.1368055 |
0.638 |
|
2004 |
Kisner R, Britton CL, Jagadish U, Wilgen JB, Roberts M, Blalock TV, Holcomb D, Bobrek M, Ericson MN. Johnson noise thermometry for harsh environments Ieee Aerospace Conference Proceedings. 4: 2586-2594. DOI: 10.1109/AERO.2004.1368053 |
0.34 |
|
2004 |
Terry SC, Chen S, Blalock BJ, Jackson JR, Dufrene BM, Mojarradi MM, Islam SK, Ericson MN. Temperature-compensated reference circuits for SOI Proceedings - Ieee International Soi Conference. 112-114. |
0.325 |
|
2003 |
Ericson MN, Britton CL, Rochelle JM, Blalock BJ, Binkley DM, Wintenberg AL, Williamson BD. Flicker noise behavior of MOSFETs fabricated in 0.5 μm fully depleted (FD) silicon-on-sapphire (SOS) CMOS in weak, moderate, and strong inversion Ieee Transactions On Nuclear Science. 50: 963-968. DOI: 10.1109/TNS.2003.815146 |
0.604 |
|
2003 |
Ericson MN, Britton CL, Rochelle JM, Blalock BJ, Williamson BD, Greenwell RL, Schultz R. High Temperature DC Characterization of Fully-Depleted 0.5μm SOS-CMOS MOSFETs for Analog Circuit Design Ieee International Soi Conference. 89-91. |
0.609 |
|
2002 |
Ericson MN, Britton CL, Rochelle JM, Blalock BJ, Binkley DM, Wintenberg AL, Williamson BD. Noise Behavior of MOSFETs Fabricated in 0.5μm Fully-Depleted (FD) Silicon-on-Sapphire (SOS) CMOS in Weak, Moderate, and Strong Inversion Ieee Nuclear Science Symposium and Medical Imaging Conference. 1: 125-129. |
0.604 |
|
2002 |
Ericson MN, Rochelle JM, Bobrek M, Britton CL, Bobrek A, Blalock BJ, Schultz R, Moore JA. 2nd- and 4th-order ΣΔ modulators fabricated in 3.3V 0.5μm SOS-CMOS for high-temperature applications Ieee International Soi Conference. 75-77. |
0.624 |
|
2001 |
Ferrell TL, Britton CL, Bryan WL, Clonts LG, Emery MS, Ericson MN, Merraudeau F, Morrison GW, Passian A, Smith SF, Threatt TD, Turner GW, Wintenberg AL. Telesensor integrated circuits. World Journal of Surgery. 25: 1412-8. PMID 11760745 DOI: 10.1007/S00268-001-0126-0 |
0.343 |
|
2000 |
Jagadish U, Britton CL, Ericson MN, Bryan WL, Schwarz WG, Read ME, Kroeger RA. A preamplifier-shaper-stretcher integrated circuit system for use with germanium strip detectors Ieee Transactions On Nuclear Science. 47: 1868-1871. DOI: 10.1109/23.914461 |
0.314 |
|
1999 |
Wintenberg AL, Belikov S, Ericson MN, Frank SS, Jackson RG, Jones JP, Simpson ML, Stankus PW, Young GR. Mondo Chip - a CMOS integrated circuit for the PHENIX electromagnetic calorimeter Ieee Nuclear Science Symposium and Medical Imaging Conference. 1: 29-34. |
0.315 |
|
1998 |
Britton CL, Warmack RJ, Smith SF, Oden PI, Brown GM, Bryan WL, Clonts LG, Duncan MG, Emery MS, Ericson MN, Hu Z, Jones RL, Moore MR, Moore JA, Rochelle JM, et al. MEMS sensors and wireless telemetry for distributed systems Proceedings of Spie - the International Society For Optical Engineering. 3328: 112-123. DOI: 10.1117/12.320161 |
0.555 |
|
1998 |
Simpson ML, Lowndes DH, Jellison GE, Ericson MN, Dress WB, Arnott JC, Guillorn MA. Single-chip photo-spectrometers realized in standard complimentary-metal-oxide-semiconductor (CMOS) technology Instrumentation in the Aerospace Industry : Proceedings of the International Symposium. 44: 449-458. |
0.305 |
|
1997 |
Ericson MN, Frank SS, Britton CL, Emery MS, Sam JS, Wintenberg AL. Configurable CMOS voltage DAC for multichannel detector systems Ieee Nuclear Science Symposium &Amp; Medical Imaging Conference. 1: 671-674. |
0.367 |
|
1997 |
Kroeger RA, Johnson WN, Kurfess JD, Schwarz WG, Read ME, Allen MD, Alley GT, Britton CL, Clonts LC, Ericson MN, Simpson ML. CMOS readout system for a double-sided germanium strip detector Ieee Nuclear Science Symposium &Amp; Medical Imaging Conference. 1: 691-693. |
0.334 |
|
1997 |
Simpson ML, Rochelle JM, Alley GT, Blalock TV, Britton CL, Bouldin DW, Bryan WL, Gonzalez RC, Ericson MN, Paulus MJ, Kennedy EJ, Smith SF, Roberts MJ, Wintenberg AL. University of Tennessee/Oak Ridge National Laboratory joint program in mixed-signal VLSI and monolithic sensors Proceedings of the Ieee International Conference On Microelectronic Systems Education, Mse. 34-35. |
0.469 |
|
1994 |
Kroeger RA, Johnson WN, Kinzer RL, Kurfess JD, Inderhees S, Allen MD, Alley GT, Britton CL, Clonts LC, Ericson MN, Simpson ML. Charge sensitive preamplifier and pulse shaper using CMOS process for germanium spectroscopy Ieee Nuclear Science Symposium &Amp; Medical Imaging Conference. 2: 786-789. DOI: 10.1109/23.467881 |
0.318 |
|
1992 |
Ericson MN, Falter KG, Rochelle JM. A wide-range logarithmic electrometer with improved accuracy and temperature stability Ieee Transactions On Instrumentation and Measurement. 41: 968-973. DOI: 10.1109/19.199444 |
0.573 |
|
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