| Year |
Citation |
Score |
| 2018 |
Ahmadivand A, Gerislioglu B, Tomitaka A, Manickam P, Kaushik A, Bhansali S, Nair M, Pala N. Extreme sensitive metasensor for targeted biomarkers identification using colloidal nanoparticles-integrated plasmonic unit cells. Biomedical Optics Express. 9: 373-386. PMID 29552379 DOI: 10.1364/Boe.9.000373 |
0.343 |
|
| 2018 |
Gerislioglu B, Ahmadivand A, Pala N. Optothermally Tuned Charge Transfer Plasmons in Au-Ge2Sb2Te5 Core-Shell Assemblies Mrs Advances. 3: 1919-1924. DOI: 10.1557/Adv.2018.258 |
0.366 |
|
| 2018 |
Gerislioglu B, Ahmadivand A, Pala N. Tunable plasmonic toroidal terahertz metamodulator Physical Review B. 97. DOI: 10.1103/Physrevb.97.161405 |
0.337 |
|
| 2018 |
Ahmadivand A, Gerislioglu B, Pala N. Optothermally controllable multiple high-order harmonics generation by Ge2Sb2Te5-mediated Fano clusters Optical Materials. 84: 301-306. DOI: 10.1016/J.Optmat.2018.07.026 |
0.317 |
|
| 2018 |
Gerislioglu B, Ahmadivand A, Pala N. Optothermally Controlled Charge Transfer Plasmons in Au-Ge2Sb2Te5 Core-Shell Dimers Plasmonics. 13: 1921-1928. DOI: 10.1007/S11468-018-0706-6 |
0.367 |
|
| 2017 |
Ahmadivand A, Gerislioglu B, Pala N. Azimuthally and radially excited charge transfer plasmon and Fano lineshapes in conductive sublayer-mediated nanoassemblies. Journal of the Optical Society of America. a, Optics, Image Science, and Vision. 34: 2052-2056. PMID 29091657 DOI: 10.1364/Josaa.34.002052 |
0.303 |
|
| 2017 |
Ahmadivand A, Gerislioglu B, Manickam P, Kaushik A, Bhansali S, Nair M, Pala N. Rapid Detection of Infectious Envelope Proteins by Magnetoplasmonic Toroidal Metasensors. Acs Sensors. PMID 28792206 DOI: 10.1021/Acssensors.7B00478 |
0.337 |
|
| 2017 |
Ahmadivand A, Gerislioglu B, Sinha R, Karabiyik M, Pala N. Optical Switching Using Transition from Dipolar to Charge Transfer Plasmon Modes in Ge2Sb2Te5 Bridged Metallodielectric Dimers. Scientific Reports. 7: 42807. PMID 28205643 DOI: 10.1038/Srep42807 |
0.332 |
|
| 2017 |
Gerislioglu B, Ahmadivand A, Pala N. Functional Quadrumer Clusters for Switching Between Fano and Charge Transfer Plasmons Ieee Photonics Technology Letters. 29: 2226-2229. DOI: 10.1109/Lpt.2017.2772041 |
0.316 |
|
| 2017 |
Ahmadivand A, Gerislioglu B, Pala N. Large-Modulation-Depth Polarization-Sensitive Plasmonic Toroidal Terahertz Metamaterial Ieee Photonics Technology Letters. 29: 1860-1863. DOI: 10.1109/Lpt.2017.2754339 |
0.369 |
|
| 2017 |
Gerislioglu B, Ahmadivand A, Pala N. Single- and Multimode Beam Propagation Through an Optothermally Controllable Fano Clusters-Mediated Waveguide Journal of Lightwave Technology. 35: 4961-4966. DOI: 10.1109/Jlt.2017.2766125 |
0.32 |
|
| 2017 |
Ahmadivand A, Gerislioglu B, Pala N. Active Control over the Interplay between the Dark and Hidden Sides of Plasmonics Using Metallodielectric Au–Ge2Sb2Te5 Unit Cells The Journal of Physical Chemistry C. 121: 19966-19974. DOI: 10.1021/Acs.Jpcc.7B05890 |
0.309 |
|
| 2017 |
Gerislioglu B, Ahmadivand A, Pala N. Hybridized plasmons in graphene nanorings for extreme nonlinear optics Optical Materials. 73: 729-735. DOI: 10.1016/J.Optmat.2017.09.042 |
0.354 |
|
| 2017 |
Ahmadivand A, Sinha R, Pala N. Magnetic fano resonances in all-dielectric nanocomplexes under cylindrical vector beams excitation Optics and Laser Technology. 90: 65-70. DOI: 10.1016/J.Optlastec.2016.11.009 |
0.306 |
|
| 2017 |
Ahmadivand A, Pala N. Absorption Enhancement in Ultrathin Structures Based on Crystalline-Si/Ag Parabola Nanocones Periodic Arrays with Broadband Antireflection Property Silicon. 9: 25-29. DOI: 10.1007/S12633-015-9341-4 |
0.338 |
|
| 2017 |
Ahmadivand A, Gerislioglu B, Sinha R, Vabbina PK, Karabiyik M, Pala N. Excitation of Terahertz Charge Transfer Plasmons in Metallic Fractal Structures Journal of Infrared, Millimeter, and Terahertz Waves. 38: 992-1003. DOI: 10.1007/S10762-017-0400-3 |
0.365 |
|
| 2017 |
Ahmadivand A, Gerislioglu B, Pala N. Graphene Optical Switch Based on Charge Transfer Plasmons Physica Status Solidi (Rrl) - Rapid Research Letters. 11: 1700285. DOI: 10.1002/Pssr.201700285 |
0.352 |
|
| 2016 |
Al-Amin C, Karabiyik M, Vabbina PK, Sinha R, Pala N. Graphene FETs with Low-Resistance Hybrid Contacts for Improved High Frequency Performance. Nanomaterials (Basel, Switzerland). 6. PMID 28335214 DOI: 10.3390/Nano6050086 |
0.365 |
|
| 2016 |
Ahmadivand A, Sinha R, Gerislioglu B, Karabiyik M, Pala N, Shur M. Transition from capacitive coupling to direct charge transfer in asymmetric terahertz plasmonic assemblies. Optics Letters. 41: 5333-5336. PMID 27842126 DOI: 10.1364/Ol.41.005333 |
0.303 |
|
| 2016 |
Ahmadivand A, Sinha R, Vabbina PK, Karabiyik M, Kaya S, Pala N. Hot electron generation by aluminum oligomers in plasmonic ultraviolet photodetectors. Optics Express. 24: 13665-78. PMID 27410381 DOI: 10.1364/Oe.24.013665 |
0.4 |
|
| 2016 |
Ahmadivand A, Sinha R, Karabiyik M, Kaya S, Pala N. Fractal aluminum Cayley-trees to design plasmonic ultraviolet photodetectors Proceedings of Spie - the International Society For Optical Engineering. 9836. DOI: 10.1117/12.2224333 |
0.371 |
|
| 2016 |
Ahmadivand A, Sinha R, Pala N. Resonance coupling in plasmonic nanomatryoshka homo- and heterodimers Aip Advances. 6. DOI: 10.1063/1.4953351 |
0.308 |
|
| 2016 |
Ahmadivand A, Sinha R, Kaya S, Pala N. A molecular plasmonic Fano-router: Using hotspots in a single-stone ring-like structure Optics Communications. 367: 123-129. DOI: 10.1016/J.Optcom.2016.01.037 |
0.342 |
|
| 2016 |
Al-Amin C, Karabiyik M, Pala N. Fabrication of Graphene Field-effect Transistor with Field Controlling Electrodes to improve fT Microelectronic Engineering. 164: 71-74. DOI: 10.1016/J.Mee.2016.07.011 |
0.358 |
|
| 2016 |
Ahmadivand A, Pala N. Analyzing Photothermal Heat Generation Efficiency in a Molecular Plasmonic Silver Nanomatryushka Dimer Plasmonics. 11: 493-501. DOI: 10.1007/S11468-015-0075-3 |
0.344 |
|
| 2016 |
Ahmadivand A, Sinha R, Karabiyik M, Vabbina PK, Gerislioglu B, Kaya S, Pala N. Tunable THz wave absorption by graphene-assisted plasmonic metasurfaces based on metallic split ring resonators Journal of Nanoparticle Research. 19. DOI: 10.1007/S11051-016-3696-3 |
0.35 |
|
| 2016 |
Al-Amin C, Vabbina PK, Karabiyik M, Sinha R, Wang C, Pala N. Bandgap engineering of single layer graphene by randomly distributed nanoparticles Journal of Materials Science: Materials in Electronics. 1-6. DOI: 10.1007/S10854-016-4722-Z |
0.313 |
|
| 2016 |
Sinha R, Karabiyik M, Ahmadivand A, Al-Amin C, Vabbina PK, Shur M, Pala N. Tunable, Room Temperature CMOS-Compatible THz Emitters Based on Nonlinear Mixing in Microdisk Resonators Journal of Infrared, Millimeter, and Terahertz Waves. 37: 230-242. DOI: 10.1007/S10762-015-0227-8 |
0.359 |
|
| 2016 |
Karabiyik M, Ahmadivand A, Sinha R, Al-Amin C, Vabbina PK, Kaya S, Rupper G, Rudin S, Shur M, Pala N. Plasmonic properties of asymmetric dual grating gate plasmonic crystals Physica Status Solidi (B) Basic Research. 253: 671-675. DOI: 10.1002/Pssb.201552609 |
0.383 |
|
| 2016 |
Ahmadivand A, Golmohammadi S, Pala N. Silicon nanorods-based all-dielectric waveguides with long decay-length at the telecommunication band International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 29: 530-543. DOI: 10.1002/Jnm.2110 |
0.355 |
|
| 2015 |
Ahmadivand A, Pala N. Tailoring the negative-refractive-index metamaterials composed of semiconductor-metal-semiconductor gold ring/disk cavity heptamers to support strong Fano resonances in the visible spectrum. Journal of the Optical Society of America. a, Optics, Image Science, and Vision. 32: 204-12. PMID 26366591 DOI: 10.1364/Josaa.32.000204 |
0.385 |
|
| 2015 |
Vabbina P, Choudhary N, Chowdhury AA, Sinha R, Karabiyik M, Das S, Choi W, Pala N. Highly Sensitive Wide Bandwidth Photodetector Based on Internal Photoemission in CVD Grown p-Type MoS2/Graphene Schottky Junction. Acs Applied Materials & Interfaces. 7: 15206-13. PMID 26148017 DOI: 10.1021/Acsami.5B00887 |
0.373 |
|
| 2015 |
Ahmadivand A, Karabiyik M, Pala N. Fano-like resonances in split concentric nanoshell dimers in designing negative-index metamaterials for biological-chemical sensing and spectroscopic purposes. Applied Spectroscopy. 69: 563-73. PMID 25811974 DOI: 10.1366/14-07750 |
0.361 |
|
| 2015 |
Sinha R, Karabiyik M, Al-Amin C, Vabbina PK, Güney DÖ, Pala N. Tunable room temperature THz sources based on nonlinear mixing in a hybrid optical and THz micro-ring resonator. Scientific Reports. 5: 9422. PMID 25800287 DOI: 10.1038/Srep09422 |
0.354 |
|
| 2015 |
Ahmadivand A, Pala N. Plasmon resonance hybridization in self-assembled copper nanoparticle clusters: efficient and precise localization of surface plasmon resonance (LSPR) sensing based on Fano resonances. Applied Spectroscopy. 69: 277-86. PMID 25587712 DOI: 10.1366/14-07589 |
0.321 |
|
| 2015 |
Ahmadivand A, Pala N. Multiple fano resonances in plasmonic metamaterials composed of Al/Al2O3 nanomatryushka structures Materials Research Society Symposium Proceedings. 1788: 43-48. DOI: 10.1557/Opl.2015.729 |
0.362 |
|
| 2015 |
Ahmadivand A, Sinha R, Pala N. Graphene plasmonics: Multiple sharp Fano resonances in silver split concentric nanoring/disk resonator dimers on a metasurface Proceedings of Spie - the International Society For Optical Engineering. 9547. DOI: 10.1117/12.2188778 |
0.376 |
|
| 2015 |
Al-Amin C, Karabiyik M, Sinha R, Pala N. Lowering contact resistance of graphene FETs with capacitive extension of ohmic contacts for enhanced RF performance Proceedings of Spie - the International Society For Optical Engineering. 9467. DOI: 10.1117/12.2176568 |
0.349 |
|
| 2015 |
Ahmadivand A, Golmohammadi S, Karabiyik M, Pala N. Fano resonances in complex plasmonic necklaces composed of gold nanodisks clusters for enhanced LSPR sensing Ieee Sensors Journal. 15: 1588-1594. DOI: 10.1109/Jsen.2014.2363613 |
0.329 |
|
| 2015 |
Golmohammadi S, Ahmadivand A, Pala N. Fano resonances in nanoshell clusters deposited on a multilayer substrate of β-SiC/SiO<inf>2</inf>/Si to design high-quality plasmonic sensors Journal of Lightwave Technology. 33: 2817-2823. DOI: 10.1109/Jlt.2015.2414439 |
0.372 |
|
| 2015 |
Ahmadivand A, Karabiyik M, Pala N. Inducing multiple Fano resonant modes in split concentric nanoring resonator dimers for ultraprecise sensing Journal of Optics (United Kingdom). 17. DOI: 10.1088/2040-8978/17/8/085104 |
0.365 |
|
| 2015 |
Ahmadivand A, Golmohammadi S, Pala N. Fano resonances in plasmonic aluminum nanoparticle clusters for precise gas detection: Ultra-sensitivity to the minor environmental refractive index perturbations Photonics and Nanostructures - Fundamentals and Applications. 13: 97-105. DOI: 10.1016/J.Photonics.2014.12.002 |
0.349 |
|
| 2015 |
Ahmadivand A, Sinha R, Pala N. Hybridized plasmon resonant modes in molecular metallodielectric quad-triangles nanoantenna Optics Communications. 355: 103-108. DOI: 10.1016/J.Optcom.2015.06.040 |
0.346 |
|
| 2015 |
Ahmadivand A, Pala N, Golmohammadi S. Electromagnetic wave propagation along T and Y-splitters composed of silicon nanorods, gold slots, and silica substrate Optics Communications. 343: 73-79. DOI: 10.1016/J.Optcom.2015.01.007 |
0.365 |
|
| 2015 |
Ahmadivand A, Karabiyik M, Pala N. Intensifying magnetic dark modes in the antisymmetric plasmonic quadrumer composed of AL/Al2O3 nanodisks with the placement of silicon nanospheres Optics Communications. 338: 218-225. DOI: 10.1016/J.Optcom.2014.10.056 |
0.343 |
|
| 2015 |
Ahmadivand A, Sinha R, Kaya S, Pala N. Rhodium Plasmonics for Deep-Ultraviolet Bio-Chemical Sensing Plasmonics. DOI: 10.1007/S11468-015-0117-X |
0.358 |
|
| 2015 |
Ahmadivand A, Pala N. Multiple coil-type Fano resonances in all-dielectric antisymmetric quadrumers Optical and Quantum Electronics. 47: 2055-2064. DOI: 10.1007/S11082-014-0079-9 |
0.318 |
|
| 2015 |
Ahmadivand A, Golmohammadi S, Karabiyik M, Pala N. Self-assembled silicon-based clusters to design efficient, fast, and controllable Fano switches Microwave and Optical Technology Letters. 57: 1242-1246. DOI: 10.1002/Mop.29061 |
0.306 |
|
| 2014 |
Vora A, Gwamuri J, Pala N, Kulkarni A, Pearce JM, Güney DÖ. Exchanging Ohmic losses in metamaterial absorbers with useful optical absorption for photovoltaics. Scientific Reports. 4: 4901. PMID 24811322 DOI: 10.1038/Srep04901 |
0.361 |
|
| 2014 |
Karabiyik M, Sinha R, Al-Amin C, Dyer GC, Pala N, Shur MS. Dispersion studies in THz plasmonic devices with cavities Proceedings of Spie - the International Society For Optical Engineering. 9102. DOI: 10.1117/12.2053447 |
0.338 |
|
| 2014 |
Al-Amin C, Sinha R, Pala N, Choi W. Novel graphene FETs with field-controlling electrodes to improve RF performance Proceedings of Spie - the International Society For Optical Engineering. 9083. DOI: 10.1117/12.2050985 |
0.357 |
|
| 2014 |
Sinha R, Karabiyik M, Al-Amin C, Vabbina PK, Shur M, Pala N. Microdisk resonators for difference frequency generation in THz range Proceedings of Spie - the International Society For Optical Engineering. 9102. DOI: 10.1117/12.2050650 |
0.366 |
|
| 2014 |
Sinha R, Karabiyik M, Al-Amin C, Vabbina PK, Pala N. Nonlinear optical resonators for tunable THz emission Proceedings of Spie - the International Society For Optical Engineering. 8985. DOI: 10.1117/12.2041387 |
0.32 |
|
| 2014 |
Al-Amin C, Karabiyik M, Vabbina PK, Sinha R, Pala N. Field controlled RF Graphene FETs with improved high frequency performance Solid-State Electronics. 95: 36-41. DOI: 10.1016/J.Sse.2014.03.003 |
0.359 |
|
| 2014 |
Ahmadivand A, Pala N. Localization, Hybridization, and Coupling of Plasmon Resonances in an Aluminum Nanomatryushka Plasmonics. 10: 809-817. DOI: 10.1007/S11468-014-9868-Z |
0.369 |
|
| 2014 |
Ahmadivand A, Pala N. Plasmon response of a metal-semiconductor multilayer 4π-spiral as a negative-index metamaterial Journal of Nanoparticle Research. 16. DOI: 10.1007/S11051-014-2764-9 |
0.332 |
|
| 2013 |
Karabiyik M, Al-Amin C, Pala N. Graphene-based periodic gate field effect transistor structures for terahertz applications Nanoscience and Nanotechnology Letters. 5: 754-757. DOI: 10.1166/Nnl.2013.1622 |
0.402 |
|
| 2013 |
Karabiyik M, Al-Amin C, Pala N. Numerical analysis of terahertz plasmonic ring resonators Proceedings of Spie - the International Society For Optical Engineering. 8716. DOI: 10.1117/12.2016548 |
0.383 |
|
| 2013 |
Karabiyik M, Al-Amin C, Pala N. Deep sub-wavelength multimode tunable in-plane plasmonic lenses operating at terahertz frequencies Ieee Transactions On Terahertz Science and Technology. 3: 1-8. DOI: 10.1109/Tthz.2013.2273415 |
0.373 |
|
| 2013 |
Al-Amin C, Vabbina PK, Karabiyik M, Sinha R, Pala N, Choi W. Improving high-frequency characteristics of graphene FETs by field-controlling electrodes Ieee Electron Device Letters. 34: 1193-1195. DOI: 10.1109/Led.2013.2272071 |
0.36 |
|
| 2012 |
Vabbina PK, Das S, Pala N, Choi W. Synthesis of crystalline ZnO nanosheets on graphene and other substrates at ambient conditions Materials Research Society Symposium Proceedings. 1449: 121-126. DOI: 10.1557/Opl.2012.1041 |
0.3 |
|
| 2012 |
Popov VV, Pala N, Shur MS. Room temperature terahertz plasmonic detection by antenna arrays of field-effect transistors Nanoscience and Nanotechnology Letters. 4: 1015-1022. DOI: 10.1166/Nnl.2012.1442 |
0.373 |
|
| 2012 |
Abbas A, Karabiyik M, Pala N. Graphene-based field-effect transistor structures for terahertz applications Proceedings of Spie - the International Society For Optical Engineering. 8363. DOI: 10.1117/12.919460 |
0.391 |
|
| 2012 |
Karabiyik M, Al-Amin C, Das S, Pala N, Choi WB. Subwavelength, multimode, tunable plasmonic terahertz lenses and detectors Proceedings of Spie - the International Society For Optical Engineering. 8363. DOI: 10.1117/12.919372 |
0.371 |
|
| 2010 |
Imafidon O, Georgakopoulos S, Vabbina PK, Pala N. Multifunctional nanodevices for energy harvesting in unconventional spectral ranges Proceedings of Spie - the International Society For Optical Engineering. 7679. DOI: 10.1117/12.855193 |
0.349 |
|
| 2010 |
Muravjov AV, Veksler DB, Popov VV, Polischuk OV, Pala N, Hu X, Gaska R, Saxena H, Peale RE, Shur MS. Temperature dependence of plasmonic terahertz absorption in grating-gate gallium-nitride transistor structures Applied Physics Letters. 96. DOI: 10.1063/1.3292019 |
0.587 |
|
| 2009 |
Peale RE, Saxena H, Buchwald WR, Aizin G, Muravjov AV, Veksler DB, Pala N, Hu X, Gaska R, Shur MS. Grating-gate tunable plasmon absorption in InP and GaN based HEMTs Proceedings of Spie - the International Society For Optical Engineering. 7467. DOI: 10.1117/12.826187 |
0.577 |
|
| 2009 |
Muravjov AV, Veksler DB, Hu X, Gaska R, Pala N, Saxena H, Peale RE, Shur MS. Resonant terahertz absorption by plasmons in grating-gate GaN HEMT structures Proceedings of Spie - the International Society For Optical Engineering. 7311. DOI: 10.1117/12.818726 |
0.565 |
|
| 2009 |
Koudymov A, Pala N, Tokranov V, Oktyabrsky S, Gaevski M, Jain R, Yang J, Hu X, Shur M, Gaska R, Simin G. HfO2-III-nitride RF switch with capacitively coupled contacts Ieee Electron Device Letters. 30: 478-480. DOI: 10.1109/Led.2009.2017284 |
0.546 |
|
| 2009 |
Koudymov A, Pala N, Tokranov V, Oktyabrsky S, Gaevski M, Jain R, Yang J, Hu X, Shur M, Gaska R, Simin G. RF transmission line method for wide-bandgap heterostructures Ieee Electron Device Letters. 30: 433-435. DOI: 10.1109/Led.2009.2016358 |
0.522 |
|
| 2009 |
Muravjov AV, Veksler DB, Popov VV, Shur MS, Pala N, Hu X, Gaska R, Saxena H, Peale RE. Terahertz plasmons in grating-gate algan/gan hemts Cleo/Europe - Eqec 2009 - European Conference On Lasers and Electro-Optics and the European Quantum Electronics Conference. DOI: 10.1109/CLEOE-EQEC.2009.5191761 |
0.513 |
|
| 2008 |
Pala N, Shur MS. Plasmonic terahertz detectors for biodetection Electronics Letters. 44: 1391-1393. DOI: 10.1049/El:20082886 |
0.321 |
|
| 2008 |
Pala N, Hu X, Deng J, Yang J, Gaska R, Yang Z, Koudymov A, Shur MS, Simin G. Drain-to-gate field engineering for improved frequency response of GaN-based HEMTs Solid-State Electronics. 52: 1217-1220. DOI: 10.1016/J.Sse.2008.05.010 |
0.543 |
|
| 2007 |
Pala N, Veksler D, Muravjov A, Stillman W, Gaska R, Shur MS. Resonant detection and modulation of terahertz radiation by 2DEG plasmons in GaN grating-gate structures Proceedings of Ieee Sensors. 570-572. DOI: 10.1109/ICSENS.2007.4388462 |
0.517 |
|
| 2007 |
Tokranov V, Rumyantsev SL, Shur MS, Gaska R, Oktyabrsky S, Jain R, Pala N. HfO2/AIGaN/GaN structures with HfO2 deposited at ultra low pressure using an e-beam Physica Status Solidi - Rapid Research Letters. 1: 199-201. DOI: 10.1002/Pssr.200701136 |
0.526 |
|
| 2006 |
Rumyantsev SL, Levinshteǐn ME, Gurevich SA, Kozhevin VM, Yavsin DA, Shur MS, Pala N, Khanna A. Low-frequency noise in monodisperse platinum nanostructures near the percolation threshold Physics of the Solid State. 48: 2194-2198. DOI: 10.1134/S106378340611028X |
0.383 |
|
| 2006 |
Veksler D, Aniel F, Rumyantsev S, Shur MS, Pala N, Hu X, Fareed RSQ, Gaska R. GaN Heterodimensional Schottky diode for THz detection Proceedings of Ieee Sensors. 323-326. DOI: 10.1109/ICSENS.2007.355471 |
0.472 |
|
| 2006 |
Vijayaraghavan A, Kar S, Rumyantsev S, Khanna A, Soldano C, Pala N, Vajtai R, Kanzaki K, Kobayashi Y, Nalamasu O, Shur MS, Ajayan PM. Effect of ambient pressure on resistance and resistance fluctuations in single-wall carbon nanotube devices Journal of Applied Physics. 100. DOI: 10.1063/1.2218265 |
0.374 |
|
| 2006 |
Sawyer S, Rumyantsev SL, Shur MS, Pala N, Bilenko Y, Zhang JP, Hu X, Lunev A, Deng J, Gaska R. Current and optical noise of GaN/AlGaN light emitting diodes Journal of Applied Physics. 100. DOI: 10.1063/1.2204355 |
0.563 |
|
| 2006 |
El Fatimy A, Boubanga Tombet S, Teppe F, Knap W, Veksler DB, Rumyantsev S, Shur MS, Pala N, Gaska R, Fareed Q, Hu X, Seliuta D, Valusis G, Gaquiere C, Theron D, et al. Terahertz detection by GaN/AlGaN transistors Electronics Letters. 42: 1342-1344. DOI: 10.1049/El:20062452 |
0.56 |
|
| 2005 |
Rumyantsev SL, Sawyer S, Pala N, Shur MS, Bilenko Y, Zhang JP, Hu X, Lunev A, Deng J, Gaska R. Low frequency noise of light emitting diodes Proceedings of Spie - the International Society For Optical Engineering. 5844: 75-85. DOI: 10.1117/12.608559 |
0.514 |
|
| 2005 |
Rumyantsev SL, Sawyer S, Shur MS, Pala N, Bilenko Y, Zhang JP, Hu X, Lunev A, Deng J, Gaska R. Low-frequency noise of GaN-based ultraviolet light-emitting diodes Journal of Applied Physics. 97. DOI: 10.1063/1.1928310 |
0.552 |
|
| 2005 |
Pala N, Teppe F, Veksler D, Deng Y, Shur MS, Gaska R. Nonresonant detection of terahertz radiation by silicon-on-insulator MOSFETs Electronics Letters. 41: 447-449. DOI: 10.1049/El:20058182 |
0.542 |
|
| 2005 |
Sawyer S, Rumyantsev SL, Pala N, Shur MS, Bilenko Y, Zhang JP, Hu X, Lunev A, Deng J, Gaska R. Optical and current noise of GaN based light emitting diodes 2005 International Semiconductor Device Research Symposium. 2005: 89-90. |
0.492 |
|
| 2004 |
Rumyantsev SL, Pala N, Shur MS, Levinshtein ME, Gaska R, Khan MA, Simin G. Generation-recombination noise in GaN-based devices International Journal of High Speed Electronics and Systems. 14: 175-195. DOI: 10.1142/S0129156404002296 |
0.571 |
|
| 2004 |
Shmidt NM, Levinshteǐn ME, Lundin WV, Besyul'kin AI, Kop'ev PS, Rumyantsev SL, Pala N, Shur MS. Low-frequency noise in gallium nitride epitaxial layers with different degrees of order of mosaic structure Semiconductors. 38: 998-1000. DOI: 10.1134/1.1797474 |
0.353 |
|
| 2004 |
Sawyer S, Rumyantsev SL, Pala N, Shur MS, Bilenko Y, Gaska R, Kosterin PV, Salzberg BM. Noise characteristics of 340 nm and 280 nm GaN-based light emitting diodes International Journal of High Speed Electronics and Systems. 14: 702-707. DOI: 10.1109/Lechpd.2004.1549675 |
0.559 |
|
| 2004 |
Pala N, Rumyantsev SL, Sinius J, Talapatra S, Shur MS, Gaska R. CuS thin films on flexible substrates Electronics Letters. 40: 273-274. DOI: 10.1049/El:20040192 |
0.456 |
|
| 2003 |
Pala N, Rumyantsev SL, Shur MS, Levinshtein ME, Asif Khan M, Simin G, Gaska R. Generation-recombination noise in GaN and GaN-based devices Proceedings of Spie - the International Society For Optical Engineering. 5113: 217-231. DOI: 10.1117/12.488468 |
0.534 |
|
| 2003 |
Rumyantsev SL, Pala N, Shur MS, Levinshtein ME, Asif Khan M, Simin G, Yang J. Low frequency noise in GaN/AlGaN heterostructure field effect transistors in non-ohmic region Journal of Applied Physics. 93: 10030-10034. DOI: 10.1063/1.1574599 |
0.398 |
|
| 2003 |
Hu X, Deng J, Pala N, Gaska R, Shur MS, Chen CQ, Yang J, Simin G, Khan MA, Rojo JC, Schowalter LJ. AlGaN/GaN heterostructure field-effect transistors on single-crystal bulk AlN Applied Physics Letters. 82: 1299-1301. DOI: 10.1063/1.1555282 |
0.545 |
|
| 2003 |
Pala N, Rumyantsev S, Shur M, Gaska R, Hu X, Yang J, Simin G, Khan MA. Low frequency noise in AlGaN/InGaN/GaN double heterostructure field effect transistors Solid-State Electronics. 47: 1099-1104. DOI: 10.1016/S0038-1101(02)00475-6 |
0.583 |
|
| 2002 |
Pala N, Rumyantsev S, Shur M, Gaska R, Hu X, Yang J, Simin G, Khan MA. GENERATION-RECOMBINATION AND 1/f NOISE IN Al0.4Ga0.6N THIN FILMS Fluctuation and Noise Letters. 2. DOI: 10.1142/S0219477502000968 |
0.548 |
|
| 2002 |
Rumyantsev SL, Pala N, Shur MS, Gaska R, Levinshtein ME, Ivanov PA, Asif Khan M, Simin G, Hu X, Yang J. Concentration dependence of the 1/f noise in AlGaN/GaN heterostructure field effect transistors Semiconductor Science and Technology. 17: 476-479. DOI: 10.1088/0268-1242/17/5/312 |
0.526 |
|
| 2002 |
Rumyantsev SL, Deng Y, Borovitskaya E, Dmitriev A, Knap W, Pala N, Shur MS, Levinshtein ME, Khan MA, Simin G, Yang J, Hu X. Low-frequency noise in GaN/AlGaN heterostructure field-effect transistors at cryogenic temperatures Journal of Applied Physics. 92: 4726-4730. DOI: 10.1063/1.1508432 |
0.41 |
|
| 2002 |
Pala N, Rumyantsev SL, Shur MS, Hu X, Tarakji A, Gaska R, Asif Khan M, Simin G, Yang J. Transient response of highly doped thin channel GaN metal-semiconductor and metal-oxide-semiconductor field effect transistors Solid-State Electronics. 46: 711-714. DOI: 10.1016/S0038-1101(01)00302-1 |
0.545 |
|
| 2001 |
Rumyantsev SL, Pala N, Shur MS, Levinshtein ME, Ivanov PA, Khan MA, Simin G, Yang J, Hu X, Tarakji A, Gaska R. Low-Frequency Noise in AlGaN/GaN Heterostructure Field Effect Transistors and Metal Oxide Semiconductor Heterostructure Field Effect Transistors Fluctuation and Noise Letters. 1. DOI: 10.1142/S0219477501000469 |
0.42 |
|
| 2001 |
Rumyantsev SL, Pala N, Shur MS, Borovitskaya E, Dmitriev AP, Levinshtein ME, Gaska R, Khan MA, Yang J, Hu X, Simin G. Generation-recombination noise in GaN/AlGaN heterostructure field effect transistors Ieee Transactions On Electron Devices. 48: 530-533. DOI: 10.1109/16.906447 |
0.576 |
|
| 2001 |
Rumyantsev SL, Pala N, Shur MS, Gaska R, Levinshtein ME, Adivarahan V, Yang J, Simin G, Khan MA. Low-frequency noise in Al0.4Ga0.6N-based Schottky barrier photodetectors Applied Physics Letters. 79: 866-868. DOI: 10.1063/1.1385191 |
0.557 |
|
| 2001 |
Rumyantsev SL, Pala N, Shur MS, Gaska R, Levinshtein ME, Asif Khan M, Simin G, Hu X, Yang J. Low frequency noise in GaN metal semiconductor and metal oxide semiconductor field effect transistors Journal of Applied Physics. 90: 310-314. DOI: 10.1063/1.1372364 |
0.579 |
|
| 2001 |
Gaska R, Shur MS, Hu X, Yang JW, Tarakji A, Simin G, Khan A, Deng J, Werner T, Rumyantsev S, Pala N. Highly doped thin-channel GaN-metal-semiconductor field-effect transistors Applied Physics Letters. 78: 769-771. DOI: 10.1063/1.1344577 |
0.413 |
|
| 2001 |
Rumyantsev SL, Pala N, Shur MS, Gaska R, Levinshtein ME, Khan MA, Simin G, Hu X, Yang J. Thin n-GaN films with low level of 1/f noise Electronics Letters. 37: 720-721. DOI: 10.1049/El:20010468 |
0.543 |
|
| 2000 |
Pala N, Gaska R, Shur M, Yang JW, Khan MA. Low-Frequency Noise in SiO2 /AlGaN/GaN Heterostructures on SiC and Sapphire Substrates Mrs Internet Journal of Nitride Semiconductor Research. 5: 612-618. DOI: 10.1557/S109257830000483X |
0.569 |
|
| 2000 |
Rumyantsev SL, Pala N, Shur MS, Gaska R, Levinshtein ME, Khan MA, Simin G, Hu X, Yang J. Effect of gate leakage current on noise properties of AlGaN/GaN field effect transistors Journal of Applied Physics. 88: 6726-6730. DOI: 10.1063/1.1321790 |
0.574 |
|
| 2000 |
Adivarahan V, Simin G, Yang JW, Lunev A, Khan MA, Pala N, Shur M, Gaska R. SiO 2 -Passivated Lateral-Geometry GaN Transparent Schottky-Barrier Detectors Applied Physics Letters. 77: 863-865. DOI: 10.1063/1.1306647 |
0.588 |
|
| 2000 |
Pala N, Lü JQ, Shur MS. Low frequency noise in GaAs heterodimensional junction field effect transistors Electronics Letters. 36: 675-677. DOI: 10.1049/El:20000498 |
0.421 |
|
| 2000 |
Pala N, Gaska R, Rumyantsev S, Shur MS, Asif Khan M, Hu X, Simin G, Yang J. Low-frequency noise in AlGaN/GaN MOSHFETs Electronics Letters. 36: 268-270. DOI: 10.1049/El:20000171 |
0.599 |
|
| 2000 |
Pala N, Gaska R, Shur M, Yang JW, Khan MA. Low-frequency noise in SiO2/AlGaN/GaN heterostructures on SiC and sapphire substrates Mrs Internet Journal of Nitride Semiconductor Research. 5. |
0.348 |
|
| 2000 |
Rumyantsev SL, Pala N, Shur MS, Levinshtein ME, Gaska R, Hu X, Yang J, Simin G, Asif Khan M. Low frequency noise in GaN-based transistors Proceedings of the Ieee Cornell Conference On Advanced Concepts in High Speed Semiconductor Devices and Circuits. 257-264. |
0.327 |
|
| 2000 |
Adivarahan V, Simin G, Yang JW, Lunev A, Asif Khan M, Pala N, Shur M, Gaska R. SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors Applied Physics Letters. 77: 863-865. |
0.314 |
|
| 1999 |
Pala N, Gaska R, Shur M, Yang JW, Khan MA. Low-Frequency Noise in SiO2/AlGaN/GaN Heterostructures on SiC and Sapphire Substrates Mrs Proceedings. 595. DOI: 10.1557/Proc-595-F99W11.9 |
0.605 |
|
| 1999 |
Lü JQ, Pala N, Shur M, Hurt MJ, Peatman WCB. High temperature performance of ion implanted hetero-dimensional JFETs Electronics Letters. 35: 845-846. DOI: 10.1049/El:19990562 |
0.301 |
|
| Show low-probability matches. |