Yih-Yin Lin, Ph.D. - Publications
Affiliations: | 2005 | University of Michigan, Ann Arbor, Ann Arbor, MI |
Area:
Electronics and Electrical EngineeringYear | Citation | Score | |||
---|---|---|---|---|---|
2009 | Wu Y, Lin Y, Huang H, Singh J. Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting Journal of Applied Physics. 105: 13117. DOI: 10.1063/1.3065274 | 0.577 | |||
2004 | Lin Y, Singh J. Theory of polarization dependent intersubband transitions in p-type SiGe/Si self-assembled quantum dots Journal of Applied Physics. 96: 1059-1063. DOI: 10.1063/1.1755848 | 0.527 | |||
2002 | Lin Y, Singh J. Self-assembled quantum dots: A study of strain energy and intersubband transitions Journal of Applied Physics. 92: 6205-6210. DOI: 10.1063/1.1515124 | 0.528 | |||
2002 | Lin Y, Singh J. Study of ferroelectric-thin-film thickness effects on metal-ferroelectric-SiO2–Si transistors Journal of Applied Physics. 91: 9297-9302. DOI: 10.1063/1.1470249 | 0.497 | |||
2001 | Lin Y, Jiang H, Singh J. A Theoretical Study of Structural Disorder and Photoluminescence Linewidth in InGaAs/GaAs Self Assembled Quantum Dots Mrs Proceedings. 707. DOI: 10.1557/Proc-707-H3.4.1 | 0.563 | |||
2001 | Lin Y, Zhang Y, Singh J. A Study of Charge Control and Gate Tunneling in a Ferroelectric-Oxide-Silicon Field Effect Transistor Mrs Proceedings. 688. DOI: 10.1557/Proc-688-C11.5.1 | 0.482 | |||
2001 | Lin YY, Zhang Y, Singh J, York R, Mishra U. Study of charge control and gate tunneling in a ferroelectric-oxide-silicon field effect transistor: Comparison with a conventional metal-oxide-silicon structure Journal of Applied Physics. 89: 1856-1860. DOI: 10.1063/1.1332425 | 0.536 | |||
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