| Year |
Citation |
Score |
| 2020 |
Abouzaid O, Mehdi H, Martin M, Moeyaert J, Salem B, David S, Souifi A, Chauvin N, Hartmann JM, Ilahi B, Morris D, Ahaitouf A, Ahaitouf A, Baron T. O-Band Emitting InAs Quantum Dots Grown By MOCVD On A 300 mm Ge-Buffered Si (001) Substrate. Nanomaterials (Basel, Switzerland). 10. PMID 33297597 DOI: 10.3390/nano10122450 |
0.416 |
|
| 2017 |
Émond N, Torriss B, Morris D, Chaker M. Natural metamaterial behavior across the phase transition for WxV1−xO2 films revealed by terahertz spectroscopy Acta Materialia. 140: 20-30. DOI: 10.1016/J.Actamat.2017.08.029 |
0.342 |
|
| 2016 |
Ilahi B, Zribi J, Guillotte M, Arès R, Aimez V, Morris D. Tunable Emission Wavelength Stacked InAs/GaAs Quantum Dots by Chemical Beam Epitaxy for Optical Coherence Tomography. Materials (Basel, Switzerland). 9. PMID 28773633 DOI: 10.3390/Ma9070511 |
0.552 |
|
| 2016 |
Aziziyan MR, Hassen WM, Morris D, Frost EH, Dubowski JJ. Photonic biosensor based on photocorrosion of GaAs/AlGaAs quantum heterostructures for detection of Legionella pneumophila. Biointerphases. 11: 019301. PMID 26903310 DOI: 10.1116/1.4941983 |
0.439 |
|
| 2016 |
Zribi J, Morris D, Ilahi B, Aldhubaib A, Aimez V, Ares R. In-situheight engineering of InGaAs / GaAs quantum dots by chemical beam epitaxy Journal of Nanophotonics. 10: 033502. DOI: 10.1117/1.Jnp.10.033502 |
0.563 |
|
| 2016 |
Petrov B, Fekecs A, Sarra-Bournet C, Ares R, Morris D. Terahertz Emitters and Detectors Made on High-Resistivity InGaAsP:Fe Photoconductors Ieee Transactions On Terahertz Science and Technology. 6: 747-753. DOI: 10.1109/Tthz.2016.2591830 |
0.363 |
|
| 2016 |
Zribi J, Ilahi B, Paquette B, Jaouad A, Theriault O, Hinzer K, Cheriton R, Patriarche G, Fafard S, Aimez V, Ares R, Morris D. Effect of Dot-Height Truncation on the Device Performance of Multilayer InAs/GaAs Quantum Dot Solar Cells Ieee Journal of Photovoltaics. DOI: 10.1109/Jphotov.2016.2514708 |
0.571 |
|
| 2016 |
Ilahi B, Nasr O, Paquette B, Hadj Alouane MH, Chauvin N, Salem B, Sfaxi L, Bru-Chevalier C, Morris D, Ares R, Aimez V, Maaref H. Thermally activated inter-dots carriers' transfer in InAs QDs with InGaAs underlying layer: Origin and dependence on the post-growth intermixing Journal of Alloys and Compounds. 656: 132-137. DOI: 10.1016/J.Jallcom.2015.09.231 |
0.581 |
|
| 2015 |
Fekecs A, Chicoine M, Ilahi B, SpringThorpe AJ, Schiettekatte F, Morris D, Charette PG, Arès R. Critical process temperatures for resistive InGaAsP/InP heterostructures heavily implanted by Fe or Ga ions Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 359: 99-106. DOI: 10.1016/J.Nimb.2015.07.045 |
0.326 |
|
| 2015 |
Fekecs A, Korinek A, Chicoine M, Ilahi B, Schiettekatte F, Morris D, Arès R. Microstructural evolution of a recrystallized Fe‐implanted InGaAsP/InP heterostructure (Phys. Status Solidi A 9∕2015) Physica Status Solidi (a). 212. DOI: 10.1002/Pssa.201570458 |
0.32 |
|
| 2015 |
Fekecs A, Korinek A, Chicoine M, Ilahi B, Schiettekatte F, Morris D, Arès R. Microstructural evolution of a recrystallized Fe-implanted InGaAsP/InP heterostructure Physica Status Solidi (a) Applications and Materials Science. 212: 1888-1896. DOI: 10.1002/Pssa.201532006 |
0.345 |
|
| 2014 |
Beaudoin A, Salem B, Baron T, Gentile P, Morris D. Impact of n -type doping on the carrier dynamics of silicon nanowires studied using optical-pump terahertz-probe spectroscopy Physical Review B - Condensed Matter and Materials Physics. 89. DOI: 10.1103/Physrevb.89.115316 |
0.309 |
|
| 2014 |
Alouane MHH, Helali A, Morris D, Maaref H, Aimez V, Salem B, Gendry M, Ilahi B. Carriers' localization and thermal redistribution in post growth voluntarily tuned quantum dashes' size/composition distribution Journal of Luminescence. 145: 595-599. DOI: 10.1016/J.Jlumin.2013.08.010 |
0.458 |
|
| 2013 |
Schicho S, Jaouad A, Sellmer C, Morris D, Aimez V, Arès R. Black germanium produced by inductively coupled plasma etching Materials Letters. 94: 86-88. DOI: 10.1016/J.Matlet.2012.12.014 |
0.441 |
|
| 2013 |
Zribi J, Ilahi B, Morris D, Aimez V, Arès R. Chemical beam epitaxy growth and optimization of InAs/GaAs quantum dot multilayers Journal of Crystal Growth. 384: 21-26. DOI: 10.1016/J.Jcrysgro.2013.08.008 |
0.507 |
|
| 2012 |
Alouane MH, Ilahi B, Maaref H, Salem B, Aimez V, Morris D, Gendry M. Temperature dependent photoluminescence properties of InAs/InP quantum dashes subjected to low energy phosphorous ion implantation and subsequent annealing. Journal of Nanoscience and Nanotechnology. 11: 9251-5. PMID 22400332 DOI: 10.1166/Jnn.2011.4298 |
0.463 |
|
| 2012 |
Roy-Guay D, Pioro-Ladrière M, Morris D, Tallaire A, Achard J, Drouin D. Cathodoluminescence And Photoluminescence Of Nv Centers International Journal of Nanoscience. 11: 1240016. DOI: 10.1142/S0219581X12400169 |
0.363 |
|
| 2012 |
Zribi J, Morris D, Arès R. Formation and morphological evolution of InAs quantum dots grown by chemical beam epitaxy Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 51207. DOI: 10.1116/1.4746072 |
0.561 |
|
| 2011 |
Farhi G, Morris D, Charlebois SA, Raskin JP. The impact of etched trenches geometry and dielectric material on the electrical behaviour of silicon-on-insulator self-switching diodes. Nanotechnology. 22: 435203. PMID 21969278 DOI: 10.1088/0957-4484/22/43/435203 |
0.303 |
|
| 2011 |
Fekecs A, Bernier M, Morris D, Chicoine M, Schiettekatte F, Charette P, Arès R. Fabrication of high resistivity cold-implanted InGaAsP photoconductors for efficient pulsed terahertz devices Optical Materials Express. 1: 1165-1177. DOI: 10.1364/Ome.1.001165 |
0.36 |
|
| 2010 |
Savard S, Allard JF, Bernier M, Petersen JC, Dodge JS, Fournier P, Morris D. Photoexcited carrier relaxation dynamics and terahertz response of photoconductive antennas made on proton bombarded GaAs materials Journal of Applied Physics. 108. DOI: 10.1063/1.3524539 |
0.364 |
|
| 2010 |
Hadj Alouane MH, Ilahi B, Maaref H, Salem B, Aimez V, Morris D, Turala A, Regreny P, Gendry M. Impact of ion-implantation-induced band gap engineering on the temperature-dependent photoluminescence properties of InAs/InP quantum dashes Journal of Applied Physics. 108: 024317. DOI: 10.1063/1.3460646 |
0.454 |
|
| 2010 |
Zaâboub Z, Ilahi B, Salem B, Aimez V, Morris D, Sfaxi L, Maaref H. Persistence of In/Ga intermixing beyond the emission energy blueshift saturation of proton-implanted InAs/GaAs quantum dots Journal of Applied Physics. 107: 124306. DOI: 10.1063/1.3436594 |
0.525 |
|
| 2009 |
Mir Y, van Lier JE, Allard JF, Morris D, Houde D. Two-photon absorption cross section of excited phthalocyanines by a femtosecond Ti-sapphire laser. Photochemical & Photobiological Sciences : Official Journal of the European Photochemistry Association and the European Society For Photobiology. 8: 391-5. PMID 19255681 DOI: 10.1039/B805909H |
0.326 |
|
| 2009 |
Dupuy E, Morris D, Pauc N, Aimez V, Gendry M, Drouin D. Carrier transport properties in the vicinity of single self-assembled quantum dots determined by low-voltage cathodoluminescence imaging Applied Physics Letters. 94. DOI: 10.1063/1.3072613 |
0.49 |
|
| 2009 |
Ilahi B, Zaâboub Z, Salem B, Morris D, Aimez V, Sfaxi L, Maaref H. Intermixing of InAs/GaAs quantum dots by proton implantation and rapid thermal annealing Materials Science in Semiconductor Processing. 12: 71-74. DOI: 10.1016/J.Mssp.2009.07.005 |
0.485 |
|
| 2008 |
Zaâboub Z, Ilahi B, Sfaxi L, Maaref H, Salem B, Aimez V, Morris D. Inhomogeneous broadening and alloy intermixing in low proton dose implanted InAs/GaAs self-assembled quantum dots Nanotechnology. 19: 285715-285715. PMID 21828749 DOI: 10.1088/0957-4484/19/28/285715 |
0.533 |
|
| 2008 |
Zaâboub Z, Ilahi B, Sfaxi L, Maaref H, Salem B, Aimez V, Morris D. Optical investigation of phosphorous-ion-implantation induced InAs/GaAs quantum dots' intermixing Physics Letters A. 372: 4714-4717. DOI: 10.1016/J.Physleta.2008.05.008 |
0.439 |
|
| 2006 |
Salem B, Morris D, Salissou Y, Aimez V, Charlebois S, Chicoine M, Schiettekatte F. Terahertz emission properties of arsenic and oxygen ion-implanted GaAs based photoconductive pulsed sources Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 24: 774-777. DOI: 10.1116/1.2183284 |
0.356 |
|
| 2006 |
Ilahi B, Salem B, Aimez V, Sfaxi L, Maaref H, Morris D. Post-growth engineering of InAs/GaAs quantum dots’ band-gap using proton implantation and annealing Nanotechnology. 17: 3707-3709. DOI: 10.1088/0957-4484/17/15/015 |
0.478 |
|
| 2006 |
Salem B, Morris D, Aimez V, Beauvais J, Houde D. Improved characteristics of a terahertz set-up built with an emitter and a detector made on proton-bombarded GaAs photoconductive materials Semiconductor Science and Technology. 21: 283-286. DOI: 10.1088/0268-1242/21/3/012 |
0.367 |
|
| 2005 |
Salem B, Morris D, Aimez V, Beerens J, Beauvais J, Houde D. Pulsed photoconductive antenna terahertz sources made on ion-implanted GaAs substrates Journal of Physics Condensed Matter. 17: 7327-7333. DOI: 10.1088/0953-8984/17/46/016 |
0.322 |
|
| 2005 |
Salem B, Aimez V, Morris D, Turala A, Regreny P, Gendry M. Band gap tuning of InAs∕InP quantum sticks using low-energy ion-implantation-induced intermixing Applied Physics Letters. 87: 241115. DOI: 10.1063/1.2142330 |
0.419 |
|
| 2005 |
Barba D, Salem B, Morris D, Aimez V, Beauvais J, Chicoine M, Schiettekatte F. Ion channeling effects on quantum well intermixing in phosphorus-implanted InGaAsP∕InGaAs∕InP Journal of Applied Physics. 98: 054904. DOI: 10.1063/1.2033143 |
0.473 |
|
| 2002 |
Ménard S, Beerens J, Morris D, Aimez V, Beauvais J, Fafard S. Magneto–photoluminescence study of intermixed self-assembled InAs/GaAs quantum dots Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 20: 1501. DOI: 10.1116/1.1495504 |
0.605 |
|
| 2002 |
Aimez V, Beauvais J, Beerens J, Morris D, Lim HS, Ooi B. Low-energy ion-implantation-induced quantum-well intermixing Ieee Journal of Selected Topics in Quantum Electronics. 8: 870-879. DOI: 10.1109/Jstqe.2002.800846 |
0.433 |
|
| 2000 |
Perret N, Morris D, Franchomme-Fossé L, Côté R, Fafard S, Aimez V, Beauvais J. Origin of the inhomogenous broadening and alloy intermixing in InAs/GaAs self-assembled quantum dots Physical Review B. 62: 5092-5099. DOI: 10.1103/Physrevb.62.5092 |
0.72 |
|
| 2000 |
Lobo C, Perret N, Morris D, Zou J, Cockayne DJH, Johnston MB, Gal M, Leon R. Carrier capture and relaxation in Stranski-Krastanow In x Ga 1 − x As / GaAs ( 311 ) B quantum dots Physical Review B. 62: 2737-2742. DOI: 10.1103/Physrevb.62.2737 |
0.716 |
|
| 1999 |
Güçlü AD, Rejeb C, Maciejko R, Morris D, Champagne A. Photoluminescence study of carrier dynamics and recombination in a strained InGaAsP/InP multiple-quantum-well structure Journal of Applied Physics. 86: 3391-3397. DOI: 10.1063/1.371219 |
0.519 |
|
| 1999 |
Morris D, Perret N, Fafard S. Carrier energy relaxation by means of Auger processes in InAs/GaAs self-assembled quantum dots Applied Physics Letters. 75: 3593-3595. DOI: 10.1063/1.125398 |
0.716 |
|
| 1996 |
Xu ZZ, Morris D. Electron–electron inter-subband scattering in GaAs quantum wells Canadian Journal of Physics. 74: 252-255. DOI: 10.1139/P96-869 |
0.494 |
|
| 1994 |
Deveaud B, Morris D, Regreny A, Planet R, Gerard JM, Barros MRX, Becker P. Ultrafast relaxation of photoexcited carriers in quantum wells and superlattices Semiconductor Science and Technology. 9: 722-726. DOI: 10.1088/0268-1242/9/5S/087 |
0.553 |
|
| 1994 |
Deveaud B, Morris D, Regreny A, Barros MRX, Becker P, Gérard JM. Quantum-mechanical versus semiclassical capture and transport properties in quantum well laser structures Optical and Quantum Electronics. 26. DOI: 10.1007/Bf00326655 |
0.468 |
|
| 1994 |
Morris D, Houde D, Deveaud B, Regreny A. Ultrafast dynamics of intersubband relaxation in GaAs quantum wells: hot carrier and phonon populations effects Superlattices and Microstructures. 15: 309-312. DOI: 10.1006/Spmi.1994.1059 |
0.471 |
|
| 1993 |
Barros MRX, Becker PC, Morris D, Deveaud B, Regreny A, Beisser F. Ultrafast optical evidence for resonant electron capture in quantum wells. Physical Review B. 47: 10951-10954. PMID 10005226 DOI: 10.1103/Physrevb.47.10951 |
0.526 |
|
| 1993 |
Deveaud B, Chomette A, Morris D, Regreny A. Carrier capture in quantum wells Solid State Communications. 85: 367-371. DOI: 10.1016/0038-1098(93)90034-K |
0.507 |
|
| 1992 |
Morris D, Sun Q, Lacelle C, Roth AP, Brebner JL, Simard-Normandin M, Rajan K. Structure property anisotropy in lattice-mismatched single heterostructures Journal of Applied Physics. 71: 2321-2327. DOI: 10.1063/1.351105 |
0.366 |
|
| 1992 |
Roth AP, Morris D, Sun Q, Lacelle C, Wasilewski Z, Maigné P, Bensaoula A. Anisotropy in InGaAs/GaAs heterostructures grown by low-pressure MOVPE and CBE Journal of Crystal Growth. 120: 212-217. DOI: 10.1016/0022-0248(92)90393-W |
0.367 |
|
| 1991 |
Leonelli R, Morris D, Brebner JL, Jiaqi D, Roth AP, Lacelle C. Time-resolved photoluminescence study of InGaAs–GaAs single heterostructures Canadian Journal of Physics. 69: 456-460. DOI: 10.1139/P91-075 |
0.421 |
|
| 1991 |
Hetherington DW, Hinrichsen PF, Masut RA, Morris D, Roth AP. Channeling and photoluminescence measurements of heteroepitaxial layers of InxGa1−xAs Canadian Journal of Physics. 69: 378-385. DOI: 10.1139/P91-063 |
0.337 |
|
| 1991 |
Sun Q, Lacelle C, Morris D, Buchanan M, Marshall P, Chow-Chong P, Roth AP. Effects of substrate misorientation on anisotropic electron transport in InGaAs/GaAs heterostructures Applied Physics Letters. 59: 1359-1361. DOI: 10.1063/1.105308 |
0.356 |
|
| 1990 |
Roth AP, Lacelle C, Morris D, Longeart M. Magneto-photoluminescence of a quasi 2-D electron-hole gas in InGaAs GaAs strained quantum wells Superlattices and Microstructures. 8: 239-244. DOI: 10.1016/0749-6036(90)90100-L |
0.49 |
|
| 1990 |
Morris D, Lacelle C, Roth AP, Maigne P, Brebner JL. Optical and structural characterization of InGaAs/GaAs superlattices with increasing number of periods Surface Science. 228: 347-350. DOI: 10.1016/0039-6028(90)90325-3 |
0.409 |
|
| 1989 |
Sun Q, Morris D, Lacelle C, Roth AP. Anisotropic Transport in InGaAs/GaAs Heterostructures Grown by Movpe Mrs Proceedings. 160: 783. DOI: 10.1557/Proc-160-783 |
0.375 |
|
| 1989 |
Roth P, Sacilotti MA, Masut RA, Morris D, Young J, Lacelle C, Fortin E, Brebner JL. The effects of substrate orientation on the optical properties of InGaAs epitaxial layers grown by low-pressure metal organic vapour-phase epitaxy Canadian Journal of Physics. 67: 330-338. DOI: 10.1139/P89-058 |
0.443 |
|
| 1988 |
Pan SH, Shen H, Hang Z, Pollak FH, Zhuang W, Xu Q, Roth AP, Masut RA, Lacelle C, Morris D. Photoreflectance study of narrow-well strained-layer InxGa1-xAs/GaAs coupled multiple-quantum-well structures. Physical Review. B, Condensed Matter. 38: 3375-3382. PMID 9946680 DOI: 10.1103/Physrevb.38.3375 |
0.485 |
|
| 1988 |
Morris D, Roth AP, Masut RA, Lacelle C, Brebner JL. Photoluminescence study of strain relaxation in Ga1-xIn xAs/GaAs single heterostructures Journal of Applied Physics. 64: 4135-4140. DOI: 10.1063/1.341324 |
0.455 |
|
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