Yuansheng Ma, Ph.D. - Publications
Affiliations: | 2006 | University of Wisconsin, Madison, Madison, WI |
Area:
Electronics and Electrical EngineeringYear | Citation | Score | |||
---|---|---|---|---|---|
2007 | Ma Y, Cheng YC, Cerrina F, Barwicz T, Smith HI. Local line edge roughness in microphotonic devices: An electron-beam lithography study Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 235-241. DOI: 10.1116/1.2426978 | 0.676 | |||
2005 | Ma Y, Cerrina F. Effect of a surface inhibition layer on line edge roughness Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1096-1101. DOI: 10.1116/1.1926292 | 0.709 | |||
2005 | Junarsa I, Stoykovich MP, Nealey PF, Ma Y, Cerrina F, Solak HH. Hydrogen silsesquioxane as a high resolution negative-tone resist for extreme ultraviolet lithography Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 138-143. DOI: 10.1116/1.1849213 | 0.648 | |||
2003 | Ma Y, Tsvid G, Cerrina F. Line edge roughness of sub-100 nm dense and isolated features: Experimental study Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 3124. DOI: 10.1116/1.1624254 | 0.716 | |||
2003 | Ma Y, Shin J, Cerrina F. Line edge roughness and photoresist percolation development model Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 112-117. DOI: 10.1116/1.1534572 | 0.65 | |||
2001 | Shin J, Han G, Ma Y, Moloni K, Cerrina F. Resist line edge roughness and aerial image contrast Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 19: 2890-2895. DOI: 10.1116/1.1418413 | 0.503 | |||
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