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Seiyon Kim, Ph.D. - Publications

Affiliations: 
2005 University of Illinois, Urbana-Champaign, Urbana-Champaign, IL 
Area:
Electronics and Electrical Engineering
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23 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2006 Sun Y, Kim HS, Menard E, Kim S, Adesida I, Rogers JA. Printed arrays of aligned GaAs wires for flexible transistors, diodes, and circuits on plastic substrates. Small (Weinheim An Der Bergstrasse, Germany). 2: 1330-4. PMID 17192982 DOI: 10.1002/Smll.200500528  0.538
2006 Jang J, Kim S, Adesida I. Enhancement-Mode High Electron Mobility Transistors Lattice-Matched to InP Substrates Utilizing Ti/Pt/Au Metallization Japanese Journal of Applied Physics. 45: 3349-3354. DOI: 10.1143/Jjap.45.3349  0.603
2006 Kim S, Adesida I. 0.15-$muhboxm$-Gate InAlAs/InGaAs/InP E-HEMTs Utilizing Ir/Ti/Pt/Au Gate Structure Ieee Electron Device Letters. 27: 873-876. DOI: 10.1109/Led.2006.883563  0.618
2006 Zhao W, Kim S, Zhang J, Adesida I. Thermally stable Ge/Ag/Ni Ohmic contact for InAlAs/InGaAs/InP HEMTs Ieee Electron Device Letters. 27: 4-6. DOI: 10.1109/Led.2005.860381  0.381
2006 Sun Y, Menard E, Rogers JA, Kim HS, Kim S, Chen G, Adesida I, Dettmer R, Cortez R, Tewksbury A. Gigahertz operation in flexible transistors on plastic substrates Applied Physics Letters. 88. DOI: 10.1063/1.2198832  0.546
2006 Jang J, Kim S, Adesida I. Fabrication and characterization of In0.52Al0.48As/In0.53Ga0.47As E/D-HEMTs on InP substrates Solid-State Electronics. 50: 758-762. DOI: 10.1016/J.Sse.2006.04.029  0.539
2005 Kim S, Adesida I, Hwang H. Measurements of thermally induced nanometer-scale diffusion depth of Pt∕Ti∕Pt∕Au gate metallization on InAlAs∕InGaAs high-electron-mobility transistors Applied Physics Letters. 87: 232102. DOI: 10.1063/1.2137687  0.556
2005 Sun Y, Kim S, Adesida I, Rogers JA. Bendable GaAs metal-semiconductor field-effect transistors formed with printed GaAs wire arrays on plastic substrates Applied Physics Letters. 87: 083501. DOI: 10.1063/1.2032609  0.58
2005 Kim S, Jang J, Adesida I. Enhancement-mode In0.52Al0.48As∕In0.53Ga0.47As∕InP HEMT utilising Ir∕Ti∕Pt∕Au gate Electronics Letters. 41: 871. DOI: 10.1049/El:20051504  0.593
2005 Kim S, Cueva G, Adesida I. Iridium Schottky contact on In0.52Al0.48As Electronics Letters. 41: 665. DOI: 10.1049/El:20051022  0.521
2004 Jang J, Kim S, Adesida I. Electrical characteristics of Ir∕Au and Pd∕Ir∕Au ohmic contacts on p-InGaAs Electronics Letters. 40: 77. DOI: 10.1049/El:20040058  0.525
1999 Kim S, Rhee SJ, Li X, Coleman JJ, Bishop SG. Annealing studies of photoluminescences spectra from multiple Er 3+ centers in Er-implanted GaN Journal of Electronic Materials. 28: 266-274. DOI: 10.1007/S11664-999-0026-X  0.33
1998 Sengupta DK, Kim S, Kuo HC, Curtis AP, Hsieh KC, Bishop SG, Feng M, Stillman GE, Gunapala SD, Bandara SV, Chang YC, Liu HC. Bandgap Shifting of an Ultra-Thin InGaAs/InP Quantum Well Infrared Photodetector via Rapid Thermal Annealing Mrs Proceedings. 525. DOI: 10.1557/Proc-525-385  0.352
1998 Kim S, Rhee SJ, Li X, Coleman JJ, Bishop SG. Photoluminescence and photoluminescence excitation spectroscopy of multipleNd3+sites in Nd-implanted GaN Physical Review B. 57: 14588-14591. DOI: 10.1103/Physrevb.57.14588  0.308
1998 Rhee SJ, Kim S, Reuter EE, Bishop SG, Molnar RJ. Photoluminescence excitation spectroscopy of free-to-bound transitions in undoped GaN grown by hydride vapor phase epitaxy Applied Physics Letters. 73: 2636-2638. DOI: 10.1063/1.122537  0.323
1998 Li X, Kim S, Reuter EE, Bishop SG, Coleman JJ. The incorporation of arsenic in GaN by metalorganic chemical vapor deposition Applied Physics Letters. 72: 1990-1992. DOI: 10.1063/1.121242  0.357
1998 Kim S, Rhee SJ, Li X, Coleman JJ, Bishop SG, Klein PB. Excitation mechanisms of multiple Er 3+ sites in Er-implanted GaN Journal of Electronic Materials. 27: 246-254. DOI: 10.1007/S11664-998-0395-6  0.325
1997 Sengupta DK, Gunapala SD, Bandara SV, Pool F, Liu JK, McKelvey M, Luong E, Torezan J, Mumulo J, Hong W, Gill J, Stillman GE, Curtis AP, Kim S, Chou LJ, et al. Monolithically Integrated Dual-Band Quantum Well Infrared Photodetector Mrs Proceedings. 484. DOI: 10.1557/Proc-484-205  0.35
1997 Kim S, Rhee SJ, Turnbull DA, Li X, Coleman JJ, Bishop SG. Site-Selective Photoluminescence Excitation and Photoluminescence Spectroscopy of Er-Implanted Wurtzite GaN Mrs Proceedings. 468. DOI: 10.1557/Proc-468-131  0.315
1997 Kim S, Rhee SJ, Turnbull DA, Li X, Coleman JJ, Bishop SG, Klein PB. Trap-mediated excitation of Er3+ photoluminescence in Er-implanted GaN Applied Physics Letters. 71: 2662-2664. DOI: 10.1063/1.120171  0.306
1997 Kim S, Rhee SJ, Turnbull DA, Reuter EE, Li X, Coleman JJ, Bishop SG. Observation of multiple Er3+ sites in Er-implanted GaN by site-selective photoluminescence excitation spectroscopy Applied Physics Letters. 71: 231-233. DOI: 10.1063/1.119507  0.317
1997 Myoung JM, Shim KH, Gluschenkov O, Kim C, Kim K, Kim S, Bishop SG. Effect of growth temperature on the properties of p-type GaN grown by plasma-assisted molecular beam epitaxy Journal of Crystal Growth. 182: 241-246. DOI: 10.1016/S0022-0248(97)00380-1  0.314
1996 Myoung JM, Shim KH, Kim C, Gluschenkov O, Kim K, Kim S, Turnbull DA, Bishop SG. Optical characteristics of p-type GaN films grown by plasma-assisted molecular beam epitaxy Applied Physics Letters. 69: 2722-2724. DOI: 10.1063/1.117690  0.3
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