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Weifeng Zhao, Ph.D. - Publications

Affiliations: 
2006 University of Illinois, Urbana-Champaign, Urbana-Champaign, IL 
Area:
Electronics and Electrical Engineering, Materials Science Engineering
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11 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2007 Choi W, Zhao W, Bae J, Adesida I, Yu B, Lee YL, Jang J. Micro-Racetrack Notch Filters Based on InGaAsP/InP High Mesa Optical Waveguides Japanese Journal of Applied Physics. 46: 2434-2439. DOI: 10.1143/Jjap.46.2434  0.541
2006 Choi WS, Jang JH, Yu BA, Lee YL, Zhao W, Bae JW, Adesida I. Low loss high mesa optical waveguides based on InGaAsP/InP heterostructures. Journal of Nanoscience and Nanotechnology. 6: 3562-6. PMID 17252812  0.571
2006 Zhao W, Mohammed FM, Adesida I. Application of the Ag-Based Ohmic Contact to the Realization of Thermally-Stable InAlAs/InGaAs/InP High Electron Mobility Transistors Japanese Journal of Applied Physics. 45: 7632-7636. DOI: 10.1143/Jjap.45.7632  0.661
2006 Wang L, Zhao W, Adesida I. Correlating the Schottky barrier height with the interfacial reactions of Ir gates for InAlAs∕InGaAs high electron mobility transistors Applied Physics Letters. 89: 211910. DOI: 10.1063/1.2393005  0.56
2006 Zhao W, Wang L, Adesida I. Electrical and structural investigations of Ag-based Ohmic contacts for InAlAs∕InGaAs∕InP high electron mobility transistors Applied Physics Letters. 89: 072105. DOI: 10.1063/1.2337102  0.579
2006 Wang L, Zhao W, Adesida I. Analytical XTEM Study of Ir/InAlAs Interfacial Reaction for InP-based High Electron Mobility Transistors (HEMTs) Gate Technology Microscopy and Microanalysis. 12: 718-719. DOI: 10.1017/S1431927606068553  0.525
2005 Zhao W, Bae JW, Adesida I, Jang JH. Effect of mask thickness on the nanoscale sidewall roughness and optical scattering losses of deep-etched InP∕InGaAsP high mesa waveguides Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 2041. DOI: 10.1116/1.2050659  0.484
2005 Zhao W, Adesida I. High temperature annealed Ge∕Ag∕Ni ohmic contact for InAlAs∕InGaAs HEMTs Electronics Letters. 41: 664. DOI: 10.1049/EL:20051106  0.465
2004 Jang JH, Zhao W, Bae JW, Adesida I, Lepore A, Kwakernaak M, Abeles JH. Study of the evolution of nanoscale roughness from the line edge of exposed resist to the sidewall of deep-etched InP∕InGaAsP heterostructures Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 2538. DOI: 10.1116/1.1800331  0.605
2003 Bae JW, Zhao W, Jang JH, Adesida I, Lepore A, Kwakernaak M, Abeles JH. Characterization of sidewall roughness of InP/InGaAsP etched using inductively coupled plasma for low loss optical waveguide applications Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 2888. DOI: 10.1116/1.1625956  0.618
2003 Jang JH, Zhao W, Bae JW, Selvanathan D, Rommel SL, Adesida I, Lepore A, Kwakernaak M, Abeles JH. Direct measurement of nanoscale sidewall roughness of optical waveguides using an atomic force microscope Applied Physics Letters. 83: 4116-4118. DOI: 10.1063/1.1627480  0.64
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