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Tian Feng, Ph.D. - Publications

Affiliations: 
2011 Graduate School - New Brunswick Rutgers University, New Brunswick, New Brunswick, NJ, United States 
Area:
Materials Science Engineering, Nanoscience
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7 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2011 Goncharova LV, Dalponte M, Feng T, Gustafsson T, Garfunkel E, Lysaght PS, Bersuker G. Diffusion and interface growth in hafnium oxide and silicate ultrathin films on Si(001) Physical Review B - Condensed Matter and Materials Physics. 83. DOI: 10.1103/Physrevb.83.115329  0.597
2011 Bansal N, Kim YS, Edrey E, Brahlek M, Horibe Y, Iida K, Tanimura M, Li GH, Feng T, Lee HD, Gustafsson T, Andrei E, Oh S. Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface Thin Solid Films. 520: 224-229. DOI: 10.1016/J.Tsf.2011.07.033  0.565
2010 Zhu X, Lee HD, Feng T, Ahyi AC, Mastrogiovanni D, Wan A, Garfunkel E, Williams JR, Gustafsson T, Feldman LC. Structure and stoichiometry of (0001) 4H-SiC/oxide interface Applied Physics Letters. 97. DOI: 10.1063/1.3481672  0.547
2010 Chambers SA, Engelhard MH, Shutthanandan V, Zhu Z, Droubay TC, Qiao L, Sushko PV, Feng T, Lee HD, Gustafsson T, Garfunkel E, Shah AB, Zuo JM, Ramasse QM. Instability, intermixing and electronic structure at the epitaxial LaAlO3SrTiO3(001) heterojunction Surface Science Reports. 65: 317-352. DOI: 10.1016/J.Surfrep.2010.09.001  0.533
2010 Lee HD, Feng T, Yu L, Mastrogiovanni D, Wan A, Garfunkel E, Gustafsson T. ALD growth of Al2O3 on GaAs: Oxide reduction, interface structure and CV performance Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 260-263. DOI: 10.1002/Pssc.200982425  0.609
2009 Dalponte M, Adam MC, Boudinov HI, Goncharova LV, Feng T, Garfunkel E, Gustafsson T. Effect of excess vacancy concentration on As and Sb doping in Si Journal of Physics D: Applied Physics. 42. DOI: 10.1088/0022-3727/42/16/165106  0.542
2009 Lee HD, Feng T, Yu L, Mastrogiovanni D, Wan A, Gustafsson T, Garfunkel E. Reduction of native oxides on GaAs during atomic layer growth of Al 2O3 Applied Physics Letters. 94. DOI: 10.1063/1.3148723  0.59
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