Year |
Citation |
Score |
2009 |
Wang X, Ren X, Kahen K, Hahn MA, Rajeswaran M, Maccagnano-Zacher S, Silcox J, Cragg GE, Efros AL, Krauss TD. Non-blinking semiconductor nanocrystals. Nature. 459: 686-9. PMID 19430463 DOI: 10.1038/Nature08072 |
0.302 |
|
2009 |
Andre Mkhoyan K, Contryman AW, Silcox J, Stewart DA, Eda G, Mattevi C, Miller S, Chhowalla M. Atomic and electronic structure of graphene-oxide. Nano Letters. 9: 1058-63. PMID 19199476 DOI: 10.1021/Nl8034256 |
0.375 |
|
2008 |
Yu Z, Hahn MA, Maccagnano-Zacher SE, Calcines J, Krauss TD, Alldredge ES, Silcox J. Small-angle rotation in individual colloidal CdSe quantum rods. Acs Nano. 2: 1179-88. PMID 19206335 DOI: 10.1021/Nn700323V |
0.653 |
|
2008 |
Silcox J. Microscopy: Spot the atom. Nature. 454: 283-4. PMID 18633403 DOI: 10.1038/454283A |
0.313 |
|
2008 |
Ozatay O, Gowtham PG, Tan KW, Read JC, Mkhoyan KA, Thomas MG, Fuchs GD, Braganca PM, Ryan EM, Thadani KV, Silcox J, Ralph DC, Buhrman RA. Sidewall oxide effects on spin-torque- and magnetic-field-induced reversal characteristics of thin-film nanomagnets. Nature Materials. 7: 567-73. PMID 18536721 DOI: 10.1038/Nmat2204 |
0.643 |
|
2008 |
Mkhoyan KA, Maccagnano-Zacher SE, Kirkland EJ, Silcox J. Effects of amorphous layers on ADF-STEM imaging. Ultramicroscopy. 108: 791-803. PMID 18374489 DOI: 10.1016/J.Ultramic.2008.01.007 |
0.712 |
|
2008 |
Muller DA, Kourkoutis LF, Murfitt M, Song JH, Hwang HY, Silcox J, Dellby N, Krivanek OL. Atomic-scale chemical imaging of composition and bonding by aberration-corrected microscopy. Science (New York, N.Y.). 319: 1073-6. PMID 18292338 DOI: 10.1126/Science.1148820 |
0.666 |
|
2008 |
Mkhoyan KA, Maccagnano-Zacher SE, Thomas MG, Silcox J. Critical role of inelastic interactions in quantitative electron microscopy. Physical Review Letters. 100: 025503. PMID 18232885 DOI: 10.1017/S1431927608085954 |
0.705 |
|
2008 |
Maccagnano-Zacher SE, Mkhoyan KA, Kirkland EJ, Silcox J. Effects of tilt on high-resolution ADF-STEM imaging. Ultramicroscopy. 108: 718-26. PMID 18160220 DOI: 10.1016/J.Ultramic.2007.11.003 |
0.71 |
|
2008 |
Yu Z, Muller DA, Silcox J. Effects of specimen tilt in ADF-STEM imaging of a-Si/c-Si interfaces. Ultramicroscopy. 108: 494-501. PMID 17920197 DOI: 10.1016/J.Ultramic.2007.08.007 |
0.695 |
|
2008 |
Maccagnano-Zacher S, Mkhoyan A, Silcox J. High-resolution electron imaging of amorphous layers with aberration-corrected probes Microscopy and Microanalysis. 14: 940-941. DOI: 10.1017/S1431927608088120 |
0.406 |
|
2008 |
Muller D, Kourkoutis L, Murfitt M, Song J, Hwang H, Silcox J, Dellby N, Krivanek O. Atomic-Scale Chemical Imaging of Composition and Bonding by Aberration-Corrected Microscopy Microscopy and Microanalysis. 14: 132-133. DOI: 10.1017/S1431927608087448 |
0.623 |
|
2007 |
Mkhoyan KA, Babinec T, Maccagnano SE, Kirkland EJ, Silcox J. Separation of bulk and surface-losses in low-loss EELS measurements in STEM. Ultramicroscopy. 107: 345-55. PMID 17074441 DOI: 10.1017/S1431927606063045 |
0.672 |
|
2007 |
Maccagnano-Zacher S, Mkhoyan A, Silcox J. Reduction of Contrast in ADF-STEM Images Due To Amorphous Layer Mrs Proceedings. 1026. DOI: 10.1557/Proc-1026-C16-02 |
0.378 |
|
2007 |
Maccagnano S, Mkhoyan A, Kirkland E, Silcox J. Effect of Amorphous Layers on ADF-STEM Imaging using Aberration-Corrected Probes Microscopy and Microanalysis. 13: 1202-1203. DOI: 10.1017/S1431927607073552 |
0.345 |
|
2007 |
Mkhoyan A, Batson P, Cha J, Schaff W, Silcox J. Direct Determination of Local Lattice Polarity in Crystals Microscopy and Microanalysis. 13: 1188-1189. DOI: 10.1017/S1431927607073539 |
0.641 |
|
2007 |
Mkhoyan A, Silcox J, McGuire M, DiSalvo F. Radiolytic Purification of CaO by Electron Beams Microscopy and Microanalysis. 13: 1268-1269. DOI: 10.1017/S1431927607073370 |
0.345 |
|
2006 |
Mkhoyan KA, Silcox J, Ellison A, Ast D, Dieckmann R. Full recovery of electron damage in glass at ambient temperatures. Physical Review Letters. 96: 205506. PMID 16803186 DOI: 10.1103/Physrevlett.96.205506 |
0.704 |
|
2006 |
Mkhoyan KA, Batson PE, Cha J, Schaff WJ, Silcox J. Direct determination of local lattice polarity in crystals. Science (New York, N.Y.). 312: 1354. PMID 16741114 DOI: 10.1126/Science.1124511 |
0.758 |
|
2006 |
Mkhoyan KA, Silcox J, McGuire MA, Disalvo FJ. Radiolytic purification of CaO by electron beams Philosophical Magazine. 86: 2907-2917. DOI: 10.1080/14786430600658025 |
0.708 |
|
2006 |
Ozatay O, Mkhoyan KA, Thomas MG, Fuchs GD, Silcox J, Buhrman RA. Analytical electron microscopy study of growth mechanism for smoothing of metallic multilayer thin films Applied Physics Letters. 89. DOI: 10.1063/1.2358958 |
0.706 |
|
2006 |
Silcox J, Mkhoyan KA. A STEM study of glass Microscopy and Microanalysis. 12: 1334-1335. DOI: 10.1017/S1431927606063896 |
0.642 |
|
2006 |
Maccagnano S, Mkhoyan KA, Calcines J, Krauss TD, Silcox J. Electron damage of CdSe quantum rods Microscopy and Microanalysis. 12: 498-499. DOI: 10.1017/S1431927606062301 |
0.695 |
|
2005 |
Yu Z, Guo L, Du H, Krauss T, Silcox J. Shell distribution on colloidal CdSe/ZnS quantum dots. Nano Letters. 5: 565-70. PMID 15826088 DOI: 10.1021/Nl048245N |
0.638 |
|
2005 |
Yu Z, Hahn MA, Calcines J, Krauss TD, Silcox J. Study of the internal structure of individual CdSe quantum rods using electron nanodiffraction Applied Physics Letters. 86: 013101-1-013101-3. DOI: 10.1063/1.1843278 |
0.655 |
|
2005 |
Yu Z, Quo L, Du H, Krauss T, Silcox J. Shell distribution on colloidal CdSe/ZnS quantum dots Nano Letters. 5: 565-570. DOI: 10.1021/nl048245n |
0.55 |
|
2005 |
Maccagnano S, Mkhoyan KA, Calcines J, Krauss TD, Silcox J. Shape of CdSe Quantum Rods using Quantitative ADF STEM Imaging Microscopy and Microanalysis. 11. DOI: 10.1017/S1431927605503726 |
0.683 |
|
2004 |
Krishnan R, Hahn MA, Yu Z, Silcox J, Fauchet PM, Krauss TD. Polarization surface-charge density of single semiconductor quantum rods. Physical Review Letters. 92: 216803. PMID 15245305 DOI: 10.1103/Physrevlett.92.216803 |
0.597 |
|
2004 |
Yu Z, Guo L, Du H, Krauss T, Silcox J. Characterization of shell material on colloidal CdSe/ZnS quantum dots Materials Research Society Symposium Proceedings. 818: 177-182. DOI: 10.1557/Proc-818-M6.8.1 |
0.591 |
|
2004 |
Jiang N, Qiu J, Silcox J. Effects of high-energy electron irradiation on heavy-metal fluoride glass Journal of Applied Physics. 96: 6230-6233. DOI: 10.1063/1.1814812 |
0.35 |
|
2004 |
Mkhoyan KA, Kirkland EJ, Silcox J, Alldredge ES. Atomic level scanning transmission electron microscopy characterization of GaN/AlN quantum wells Journal of Applied Physics. 96: 738-746. DOI: 10.1063/1.1756222 |
0.731 |
|
2004 |
Yu Z, Muller DA, Silcox J. Study of strain fields at a-Si/c-Si interface Journal of Applied Physics. 95: 3362-3371. DOI: 10.1063/1.1649463 |
0.686 |
|
2004 |
Mkhoyan KA, Silcox J, Yu Z, Schaff WJ, Eastman LF. Formation of a quasi-two-dimensional electron gas in GaN/AlxGa1-xN heterostructures with diffuse interfaces Journal of Applied Physics. 95: 1843-1848. DOI: 10.1063/1.1641148 |
0.776 |
|
2004 |
Yu Z, Silcox J. Channeling of Sub–angstrom Probes Along Isolated Atomic Columns Microscopy and Microanalysis. 10: 570-571. DOI: 10.1017/S143192760488485X |
0.571 |
|
2004 |
Jiang N, Silcox J. High-energy electron irradiation and b coordination in Na 2O-B2O3-SiO2 glass Journal of Non-Crystalline Solids. 342: 12-17. DOI: 10.1016/J.Jnoncrysol.2004.07.001 |
0.361 |
|
2003 |
Yu Z, Batson PE, Silcox J. Artifacts in aberration-corrected ADF-STEM imaging. Ultramicroscopy. 96: 275-84. PMID 12871794 DOI: 10.1016/S0304-3991(03)00093-7 |
0.768 |
|
2003 |
Jiang N, Qiu J, Ellison A, Silcox J. Fundamentals of high-energy electron-irradiation-induced modifications of silicate glasses Physical Review B. 68: 64207. DOI: 10.1103/Physrevb.68.064207 |
0.326 |
|
2003 |
Mkhoyan KA, Silcox J, Wu H, Schaff WJ, Eastman LF. Nonuniformities in GaN/AlN quantum wells Applied Physics Letters. 83: 2668-2670. DOI: 10.1063/1.1614439 |
0.715 |
|
2003 |
Jiang N, Hembree GG, Spence JCH, Qiu J, Garcia de Abajo FJ, Silcox J. Nanoring formation by direct-write inorganic electron-beam lithography Applied Physics Letters. 83: 551-553. DOI: 10.1063/1.1592895 |
0.405 |
|
2003 |
Mkhoyan KA, Silcox J, Alldredge ES, Ashcroft NW, Lu H, Schaff WJ, Eastman LF. Measuring electronic structure of wurtzite InN using electron energy loss spectroscopy Applied Physics Letters. 82: 1407-1409. DOI: 10.1063/1.1559660 |
0.694 |
|
2003 |
Mkhoyan KA, Silcox J. Electron-beam-induced damage in wurtzite InN Applied Physics Letters. 82: 859-861. DOI: 10.1063/1.1543642 |
0.697 |
|
2003 |
Yu Z, Muller DA, Silcox J. Relative contrast in a-Si and c-Si in ADF-STEM imaging Microscopy and Microanalysis. 9: 848-849. DOI: 10.1017/S1431927603444243 |
0.658 |
|
2003 |
Mkhoyan KA, Wu H, Schaff WJ, Eastman LF, Silcox J. Measuring non-uniformities in GaN/AIN quantum wells Microscopy and Microanalysis. 9: 816-817. DOI: 10.1017/S1431927603444085 |
0.664 |
|
2003 |
Yu Z, Hahn M, Krauss T, Silcox J. STEM observations of twisting in colloidal CdSe quantum rods Microscopy and Microanalysis. 9: 362-363. DOI: 10.1017/S1431927603441810 |
0.605 |
|
2002 |
Wu H, Schaff WJ, Koley G, Furis M, Cartwright AN, Mkhoyan KA, Silcox J, Henderson W, Doolittle WA, Osinsky AV. Molecular Beam Epitaxial Growth of AlN/GaN Multiple Quantum Wells Mrs Proceedings. 743: 375-380. DOI: 10.1557/Proc-743-L6.2 |
0.697 |
|
2002 |
Jiang N, Silcox J. Electron irradiation induced phase decomposition in alkaline earth multi-component oxide glass Journal of Applied Physics. 92: 2310-2316. DOI: 10.1063/1.1496148 |
0.341 |
|
2002 |
Jiang N, Qiu J, Gaeta AL, Silcox J. Nanoscale modification of optical properties in Ge-doped SiO2 glass by electron-beam irradiation Applied Physics Letters. 80: 2005-2007. DOI: 10.1063/1.1454211 |
0.373 |
|
2002 |
Jiang N, Eustis TJ, Cai J, Ponce F, Spence J, Silcox J. Polarity determination by atomic location by channeling-enhanced microanalysis Applied Physics Letters. 80: 389-391. DOI: 10.1063/1.1433919 |
0.776 |
|
2002 |
Silcox J. The Emergence of Aberration Correctors for Electron Lenses Microscopy Today. 10: 8-9. DOI: 10.1017/S1551929500057977 |
0.352 |
|
2002 |
Mkhoyan KA, Silcox J. Electron beam induced damage in wurtzite InN Microscopy and Microanalysis. 8: 628-629. DOI: 10.1017/S1431927602106088 |
0.688 |
|
2002 |
Yu Z, Silcox J. Observation of Non-uniformities in Calcium Aluminosilicate Glass using EELS Microscopy and Microanalysis. 8: 604-605. DOI: 10.1017/S1431927602105964 |
0.552 |
|
2002 |
Mkhoyan KA, Alldredge ES, Ashcroft NW, Silcox J. EELS measurements on wurtzite InN Microscopy and Microanalysis. 8: 570-571. DOI: 10.1017/S1431927602105794 |
0.637 |
|
2002 |
Silcox J. The Emergence of Aberration Correctors for Electron Lenses Microscopy and Microanalysis. 8: 2-3. DOI: 10.1017/S1431927602101449 |
0.352 |
|
2001 |
Muller DA, Edwards B, Kirkland EJ, Silcox J. Simulation of thermal diffuse scattering including a detailed phonon dispersion curve. Ultramicroscopy. 86: 371-80. PMID 11281157 DOI: 10.1016/S0304-3991(00)00128-5 |
0.506 |
|
2001 |
Plisch MJ, Chang JL, Silcox J, Buhrman RA. Atomic-scale characterization of a Co/AlOx/Co magnetic tunnel junction by scanning transmission electron microscopy Applied Physics Letters. 79: 391-393. DOI: 10.1063/1.1383569 |
0.364 |
|
2001 |
Mkhoyan KA, Alldredge ES, Silcox J, Ashcroft NW. Determination of the Width of the GaN/AlxGa1-xN Heterointerface Using EELS Microscopy and Microanalysis. 7: 216-217. DOI: 10.1017/S143192760002715X |
0.661 |
|
2000 |
Eustis TJ, Silcox J, Murphy MJ, Schaff WJ. Evidence From EELS of Oxygen in the Nucleation Layer of a MBE Grown III-N HEMT Mrs Internet Journal of Nitride Semiconductor Research. 5: 188-194. DOI: 10.1557/S1092578300004269 |
0.755 |
|
2000 |
Jiang N, Silcox J. Observations of reaction zones at chromium/oxide glass interfaces Journal of Applied Physics. 87: 3768-3776. DOI: 10.1063/1.372412 |
0.315 |
|
2000 |
Lee JL, Silcox J. Annular dark-field image simulation of the YBa2Cu3O(7-δ)/BaF2 interface Ultramicroscopy. 84: 65-74. DOI: 10.1016/S0304-3991(00)00020-6 |
0.369 |
|
1999 |
Eustis TJ, Silcox J, Murphy MJ, Schaff WJ. Evidence from EELS of Oxygen in the Nucleation Layer of a MBE grown III-N HEMT Mrs Proceedings. 595. DOI: 10.1557/Proc-595-F99W3.31 |
0.755 |
|
1999 |
Vanfleet R, Muller D, Gossmann H, Citrin P, Silcox J. Atomic-Scale Imaging of Dopant Atom Distributions Within Silicon δ-Doped Layers Mrs Proceedings. 589. DOI: 10.1557/Proc-589-173 |
0.489 |
|
1999 |
Murphy MJ, Chu K, Wu H, Yeo W, Schaff WJ, Ambacher O, Eastman LF, Eustis TJ, Silcox J, Dimitrov R, Stutzmann M. High-frequency AlGaN/GaN polarization-induced high electron mobility transistors grown by plasma-assisted molecular-beam epitaxy Applied Physics Letters. 75: 3653-3655. DOI: 10.1063/1.125418 |
0.775 |
|
1999 |
Vanfleet RR, Muller D, Gossmann H-, Silcox J. Antimony Delta Doping by Scanning Transmission Electron Microscopy and Electron Energy Loss Spectroscopy Microscopy and Microanalysis. 5: 614-615. DOI: 10.1017/S1431927600016391 |
0.529 |
|
1998 |
Muller DA, Shashkov DA, Benedek R, Yang LH, Silcox J, Seidman DN. Atomic-Scale Studies of the Electronic Structure of Ceramic/Metal Interfaces:{222}MgO/Cu Materials Science Forum. 99-102. DOI: 10.4028/Www.Scientific.Net/Msf.294-296.99 |
0.527 |
|
1998 |
Muller DA, Shashkov DA, Benedek R, Yang LH, Silcox J, Seidman DN. Atomic Scale Observations of Metal-Induced Gap States at{222}MgO/Cu Interfaces Physical Review Letters. 80: 4741-4744. DOI: 10.1103/Physrevlett.80.4741 |
0.494 |
|
1998 |
Muller DA, Batson PE, Silcox J. Measurement and models of electron-energy-loss spectroscopy core-level shifts in nickel aluminum intermetallics Physical Review B. 58: 11970-11981. DOI: 10.1103/Physrevb.58.11970 |
0.497 |
|
1998 |
Muller DA, Singh DJ, Silcox J. Connections between the electron-energy-loss spectra, the local electronic structure, and the physical properties of a material: A study of nickel aluminum alloys Physical Review B. 57: 8181-8202. DOI: 10.1103/Physrevb.57.8181 |
0.525 |
|
1998 |
Vanfleet RR, Silcox J. Prospects For Imaging of Single Dopant Atoms in Silicon by ADF Stem Microscopy and Microanalysis. 4: 646-647. DOI: 10.1017/S1431927600023357 |
0.334 |
|
1998 |
Silcox J. Core-loss EELS Current Opinion in Solid State and Materials Science. 3: 336-342. DOI: 10.1016/S1359-0286(98)80042-9 |
0.41 |
|
1997 |
Benedek R, Shashkov DA, Seidman DN, Muller DA, Silcox J, Chisholm MF, Yang LH. Atomic Structure of a Polar Ceramic/Metal Interface: {222}MgO/Cu Mrs Proceedings. 492. DOI: 10.1557/Proc-492-103 |
0.527 |
|
1997 |
Subramanian S, Muller DA, Silcox J, Sass SL. Chemistry, bonding and fracture of grain boundaries in Ni3Si Acta Materialia. 45: 3565-3571. DOI: 10.1557/Proc-460-647 |
0.461 |
|
1997 |
Lipovskii A, Kolobkova E, Petrikov V, Kang I, Olkhovets A, Krauss T, Thomas M, Silcox J, Wise F, Shen Q, Kycia S. Synthesis and characterization of PbSe quantum dots in phosphate glass Applied Physics Letters. 71: 3406-3408. DOI: 10.1063/1.120349 |
0.336 |
|
1997 |
Müller DA, Edwards B, Kirkland EJ, Silcox J. Detailed Calculations of Thermal Diffuse Scattering Microscopy and Microanalysis. 3: 1153-1154. DOI: 10.1017/S1431927600012654 |
0.393 |
|
1997 |
Müller DA, Shashkov DA, Benedek R, Yang LH, Seidman DN, Silcox J. Chemistry and Bonding at {222}Mgo/Cu Heterophase Interfaces Microscopy and Microanalysis. 3: 647-648. DOI: 10.1017/S1431927600010126 |
0.4 |
|
1997 |
Subramanian S, Muller DA, Silcox J, Sass SL. The role of chemistry in controlling the bonding and fracture properties of grain boundaries in L12 intermetallic compounds Materials Science and Engineering A. 239: 297-308. DOI: 10.1016/S0921-5093(97)00597-2 |
0.441 |
|
1996 |
Muller DA, Subramanian S, Batson PE, Silcox J, Sass SL. Structure, chemistry and bonding at grain boundaries in Ni3Al - I. The role of boron in ductilizing grain boundaries Acta Materialia. 44: 1637-1645. DOI: 10.1016/1359-6454(95)00267-7 |
0.471 |
|
1996 |
Subramanian S, Muller DA, Silcox J, Sass SL. Structure, chemistry and bonding at grain boundaries in Ni3Al - II. The structure of small angle boundaries, Ni-enrichment and its influence on bonding, structure, energy and properties Acta Materialia. 44: 1647-1655. DOI: 10.1016/1359-6454(95)00266-9 |
0.503 |
|
1995 |
Muller DA, Subramanian S, Batson PE, Sass SL, Silcox J. Near atomic scale studies of electronic structure at grain boundaries in Ni3Al. Physical Review Letters. 75: 4744-4747. PMID 10059986 DOI: 10.1103/Physrevlett.75.4744 |
0.471 |
|
1995 |
Muller DA, Subramanian S, Sass SL, Silcox J, Batson PE. Local electronic structure and cohesion of grain boundaries in Ni3Al Materials Research Society Symposium - Proceedings. 364: 743-748. DOI: 10.1557/Proc-364-743 |
0.473 |
|
1995 |
Muller DA, Silcox J. Radiation damage of Ni3Al by 100 keV electrons Philosophical Magazine A. 71: 1375-1387. DOI: 10.1080/01418619508244380 |
0.487 |
|
1995 |
Subramanian S, Muller DA, Batson PE, Silcox J, Sass SL. The structure, bonding and chemistry of grain boundaries in Ni3Al Materials Science and Engineering A. 192: 936-944. DOI: 10.1016/0921-5093(94)03324-2 |
0.483 |
|
1995 |
Muller D, Silcox J. Delocalization in inelastic scattering Ultramicroscopy. 59: 195-213. DOI: 10.1016/0304-3991(95)00029-Z |
0.5 |
|
1995 |
Hillyard S, Silcox J. Detector geometry, thermal diffuse scattering and strain effects in ADF STEM imaging Ultramicroscopy. 58: 6-17. DOI: 10.1016/0304-3991(94)00173-K |
0.367 |
|
1994 |
Lee T, Silcox J. Electron beam irradiated effects of SiO{sub 2} in STEM Mrs Proceedings. 373. DOI: 10.1557/Proc-373-335 |
0.409 |
|
1994 |
Subramanian S, Muller DA, Silcox J, Sass SL. Ni-Enrichment and its Influence on the Structure Chemistry and Bonding of Grain Boundaries in Ni3Al Mrs Proceedings. 364. DOI: 10.1557/Proc-364-333 |
0.507 |
|
1994 |
Muller DA, Tzou Y, Raj R, Silcox J. Electronic Structure and Bonding at Interfaces Between cvd Diamond and Silicon Mrs Proceedings. 332. DOI: 10.1557/Proc-332-163 |
0.53 |
|
1994 |
Muller DA, Batson PE, Subramanian S, Sass SL, Silcox J. Experimental measurement of the local electronic structure of grain boundaries in Ni3Al Materials Research Society Symposium - Proceedings. 319: 299-304. DOI: 10.1557/Proc-319-299 |
0.482 |
|
1993 |
Lee T, Soave RJ, Shacham-Diamand YY, Silcox J. Nanometer-Scale Oxide Particles in Gesi Films Grown by Wet Oxidation Mrs Proceedings. 321. DOI: 10.1557/Proc-321-615 |
0.308 |
|
1993 |
Zeng X, Lee T, Silcox J, Thompson MO. Interface Stability During Solid Phase Epitaxy Of Strained GexS1-x Films on Si (100) Mrs Proceedings. 321. DOI: 10.1557/Proc-321-503 |
0.304 |
|
1993 |
Muller DA, Tzou Y, Raj R, Silcox J. Mapping sp2 and sp3 states of carbon at sub-nanometre spatial resolution Nature. 366: 725-727. DOI: 10.1038/366725A0 |
0.451 |
|
1993 |
Hillyard S, Loane RF, Silcox J. Annular dark-field imaging: Resolution and thickness effects Ultramicroscopy. 49: 14-25. DOI: 10.1016/0304-3991(93)90209-G |
0.378 |
|
1993 |
Hillyard S, Silcox J. Thickness effects in ADF STEM zone axis images Ultramicroscopy. 52: 325-334. DOI: 10.1016/0304-3991(93)90043-W |
0.418 |
|
1992 |
Hallen HD, Fernandez A, Huang T, Silcox J, Buhrman RA. Scattering and spectral shape in ballistic-electron-emission microscopy of NiSi2-Si(111) and Au-Si samples. Physical Review. B, Condensed Matter. 46: 7256-7259. PMID 10002447 DOI: 10.1103/Physrevb.46.7256 |
0.357 |
|
1992 |
Silcox J, Xu P, Loane RF. Resolution limits in annular dark field STEM Ultramicroscopy. 47: 173-186. DOI: 10.1016/0304-3991(92)90194-O |
0.361 |
|
1992 |
Wong K, Kirkland E, Xu P, Loane R, Silcox J. Measurement of spherical aberration in STEM Ultramicroscopy. 40: 139-150. DOI: 10.1016/0304-3991(92)90055-O |
0.362 |
|
1992 |
Loane RF, Xu P, Silcox J. Incoherent imaging of zone axis crystals with ADF STEM Ultramicroscopy. 40: 121-138. DOI: 10.1016/0304-3991(92)90054-N |
0.34 |
|
1991 |
Fernandez A, Hallen HD, Huang T, Buhrman RA, Silcox J. Elastic scattering in ballistic-electron-emission microscopy studies of the epitaxial NiSi2/Si(111) interface. Physical Review. B, Condensed Matter. 44: 3428-3431. PMID 9999960 DOI: 10.1103/Physrevb.44.3428 |
0.39 |
|
1991 |
Loane RF, Xu P, Silcox J. Thermal vibrations in convergent-beam electron diffraction Acta Crystallographica Section a Foundations of Crystallography. 47: 267-278. DOI: 10.1107/S0108767391000375 |
0.366 |
|
1991 |
Xu P, Loane RF, Silcox J. Energy-filtered convergent-beam electron diffraction in STEM Ultramicroscopy. 38: 127-133. DOI: 10.1016/0304-3991(91)90113-K |
0.378 |
|
1990 |
Xu P, Miller P, Silcox J. The Nucleation and Epitaxial Growth of Au and Ag on Thin Silicon Studied With a Scanning Transmission Electron Microscope Mrs Proceedings. 202: 19. DOI: 10.1557/Proc-202-19 |
0.358 |
|
1990 |
Shin DH, Silcox J, Russek SE, Lathrop DK, Moeckly B, Buhrman RA. Clean grain boundaries and weak links in high Tc superconducting YBa2Cu3O7-x thin films Applied Physics Letters. 57: 508-510. DOI: 10.1063/1.104242 |
0.317 |
|
1990 |
Fernandez A, Hallen HD, Huang T, Buhrman RA, Silcox J. Ballistic electron studies and modification of the Au/Si interface Applied Physics Letters. 57: 2826-2828. DOI: 10.1063/1.103754 |
0.364 |
|
1990 |
XU P, Kirkland EJ, Silcox J, Keyse R. High-resolution imaging of silicon (111) using a 100 keV STEM Ultramicroscopy. 32: 93-102. DOI: 10.1016/0304-3991(90)90027-J |
0.355 |
|
1989 |
Shin DH, Kirkland EJ, Silcox J. Annular dark field electron microscope images with better than 2 Å resolution at 100 kV Applied Physics Letters. 55: 2456-2458. DOI: 10.1063/1.102297 |
0.377 |
|
1988 |
Loane RF, Kirkland EJ, Silcox J. Visibility of single heavy atoms on thin crystalline silicon in simulated annular dark-field STEM images Acta Crystallographica Section a Foundations of Crystallography. 44: 912-927. DOI: 10.1107/S0108767388006403 |
0.397 |
|
1987 |
Kirkland EJ, Loane RF, Silcox J. Simulation of annular dark field stem images using a modified multislice method Ultramicroscopy. 23: 77-96. DOI: 10.1016/0304-3991(87)90229-4 |
0.385 |
|
1979 |
Chen CH, Silcox J. Calculations of the electron-energy-loss probability in thin uniaxial crystals at oblique incidence Physical Review B. 20: 3605-3614. DOI: 10.1103/Physrevb.20.3605 |
0.361 |
|
1975 |
Chen CH, Silcox J, Vincent R. Electron-energy losses in silicon: Bulk and surface plasmons and Čerenkov radiation Physical Review B. 12: 64-71. DOI: 10.1103/Physrevb.12.64 |
0.34 |
|
1968 |
Srivastava ON, Silcox J. Dislocation climb in gadolinium due to thermal diffusion Philosophical Magazine. 18: 503-518. DOI: 10.1080/14786436808227456 |
0.335 |
|
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