Stephen J. Pearton - Publications

Affiliations: 
University of Florida, Gainesville, Gainesville, FL, United States 
Area:
Materials Science Engineering, Polymer Chemistry
Website:
https://mse.ufl.edu/people/mse-faculty/stephen-pearton/

309 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Shan SS, Lu SY, Yang YP, Lin SP, Carey P, Xian M, Ren F, Pearton S, Chang CW, Lin J, Liao YT. A Two-electrode, Double-pulsed Sensor Readout Circuit for Cardiac Troponin I Measurement. Ieee Transactions On Biomedical Circuits and Systems. PMID 33035161 DOI: 10.1109/TBCAS.2020.3029912  0.76
2019 Lu SY, Shan SS, Yang J, Chang CW, Ren F, Lin J, Pearton S, Liao YT. A Reconfigurable, Pulse-shaping Potentiometric Readout System for Bio-Sensing Transistors. Conference Proceedings : ... Annual International Conference of the Ieee Engineering in Medicine and Biology Society. Ieee Engineering in Medicine and Biology Society. Annual Conference. 2019: 5761-5764. PMID 31947161 DOI: 10.1109/EMBC.2019.8857404  0.76
2018 Lee G, Pearton SJ, Ren F, Kim J. Two-dimensionally layered p-black phosphorus/n-MoS/p-black phosphorus Heterojunctions. Acs Applied Materials & Interfaces. PMID 29485269 DOI: 10.1021/acsami.7b19334  0.76
2017 Yang G, Jang S, Ren F, Pearton SJ, Kim J. Influence of high-energy proton irradiation on β-Ga2O3 nanobelt field-effect transistors. Acs Applied Materials & Interfaces. PMID 29083157 DOI: 10.1021/acsami.7b13881  0.76
2016 Pearton SJ, Ren F, Patrick E, Law ME, Polyakov AY. Review - Ionizing radiation damage effects on GaN devices Ecs Journal of Solid State Science and Technology. 5: Q35-Q60. DOI: 10.1149/2.0251602jss  0.96
2016 Ahn S, Kim BJ, Lin YH, Ren F, Pearton SJ, Yang G, Kim J, Kravchenko II. Effect of proton irradiation dose on InAlN/GaN metal-oxide semiconductor high electron mobility transistors with Al2O3 gate oxide Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4959786  0.96
2016 Lim W, Kum H, Choi YJ, Sim SH, Yeon JH, Kim JS, Seong HK, Cha NG, Kim YI, Park YS, Yoo G, Pearton SJ. SiO2 nanohole arrays with high aspect ratio for InGaN/GaN nanorod-based phosphor-free white light-emitting-diodes Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 34. DOI: 10.1116/1.4959027  0.96
2016 Morrow WK, Lee C, Denbaars SP, Ren F, Pearton SJ. Role of graphene interlayers in mitigating degradation of Ni/Au ohmic contact morphology on p-type GaN Vacuum. 128: 34-38. DOI: 10.1016/j.vacuum.2016.03.004  0.96
2015 Morrow WK, Pearton SJ, Ren F. Review of Graphene as a Solid State Diffusion Barrier. Small (Weinheim An Der Bergstrasse, Germany). PMID 26523843 DOI: 10.1002/smll.201501120  0.96
2015 Hwang YH, Ahn S, Dong C, Zhu W, Kim BJ, Ren F, Lind AG, Jones KS, Pearton SJ, Kravchenko II. Effect of buffer oxide etchant (BOE) on Ti/Al/Ni/Au ohmic contacts for AlGaN/GaN based HEMT Ecs Transactions. 69: 111-118. DOI: 10.1149/06914.0111ecst  0.44
2015 Hwang YH, Kang TS, Ren F, Pearton SJ. A novel approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors with a backside Cu via Ecs Transactions. 66: 223-230. DOI: 10.1149/06601.0223ecst  0.44
2015 Hwang YH, Zhu W, Dong C, Ahn S, Ren F, Kravchenko II, Smith DJ, Pearton SJ. A novel backside gate structure to improve device performance Ecs Transactions. 66: 185-190. DOI: 10.1149/06601.0185ecst  0.96
2015 Patrick EE, Choudhury M, Ren F, Pearton SJ, Law ME. Simulation of radiation effects in AlGaN/GaN HEMTs Ecs Transactions. 66: 21-31. DOI: 10.1149/06601.0021ecst  0.96
2015 Ren F, Hwang YH, Pearton SJ, Patrick E, Law ME. Enhancement of AlGaN/GaN high-electron mobility transistor off-state drain breakdown voltage via backside proton irradiation Proceedings of Spie - the International Society For Optical Engineering. 9363. DOI: 10.1117/12.2076676  0.96
2015 Kang TS, Ren F, Gila BP, Pearton SJ, Patrick E, Cheney DJ, Law M, Zhang ML. Investigation of traps in AlGaN/GaN high electron mobility transistors by sub-bandgap optical pumping Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4931790  0.36
2015 Hays DC, Gila BP, Pearton SJ, Kim BJ, Ren F, Jang TS. Band offsets in Sc2O3/ZnO heterostructures deposited by RF magnetron sputtering Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4931035  0.96
2015 Ahn S, Dong C, Zhu W, Kim BJ, Hwang YH, Ren F, Pearton SJ, Yang G, Kim J, Patrick E, Tracy B, Smith DJ, Kravchenko II. Effect of proton irradiation energy on AlGaN/GaN metal-oxide semiconductor high electron mobility transistors Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4928730  0.44
2015 Hwang YH, Dong C, Hsieh YL, Zhu W, Ahn S, Ren F, Pearton SJ, Kravchenko II. Improvement of drain breakdown voltage with a back-side gate on AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 33. DOI: 10.1116/1.4922022  0.76
2015 Kim BJ, Hwang YH, Ahn S, Zhu W, Dong C, Lu L, Ren F, Holzworth MR, Jones KS, Pearton SJ, Smith DJ, Kim J, Zhang ML. Recovery in dc and rf performance of off-state step-stressed AlGaN/GaN high electron mobility transistors with thermal annealing Applied Physics Letters. 106. DOI: 10.1063/1.4918530  0.96
2015 Hays DC, Gila BP, Pearton SJ, Ren F. ZrSiOx/IGZO heterojunctions band offsets determined by X-ray photoelectron spectroscopy Vacuum. 122: 195-200. DOI: 10.1016/j.vacuum.2015.09.029  0.96
2015 Pearton SJ, Hwang YS, Ren F. Radiation Effects in GaN-Based High Electron Mobility Transistors Jom. DOI: 10.1007/s11837-015-1359-y  0.76
2014 Park JC, Kim KW, Gila BP, Lambers ES, Norton DP, Pearton SJ, Ren F, Kim JK, Cho H. Measurement of band offsets in Y2O3/InGaZnO4 heterojunctions. Journal of Nanoscience and Nanotechnology. 14: 8445-8. PMID 25958543 DOI: 10.1166/JNN.2014.9935  0.76
2014 Yang G, Jung Y, Cuervo CV, Ren F, Pearton SJ, Kim J. GaN-based light-emitting diodes on graphene-coated flexible substrates. Optics Express. 22: A812-7. PMID 24922388  0.76
2014 Kim JK, Kim KW, Douglas EA, Gila BP, Craciun V, Lambers ES, Norton DP, Ren F, Pearton SJ, Cho H. Band offsets in YSZ/InGaZnO4 heterostructure system. Journal of Nanoscience and Nanotechnology. 14: 3925-7. PMID 24734665 DOI: 10.1166/JNN.2014.7939  0.76
2014 Hwang YH, Hsieh YL, Lei L, Li S, Ren F, Pearton SJ, Yadav A, Schwarz C, Shatkhin M, Wang L, Flitsiyan E, Chernyak L, Baca AG, Allerman AA, Sanchez CA, et al. Effect of gamma irradiation on DC performance of circular-shaped AlGaN/GaN high electron mobility transistors Ecs Transactions. 61: 205-210. DOI: 10.1149/06104.0205ecst  0.96
2014 Xi YY, Hwang YH, Hsieh YL, Li S, Ren F, Pearton SJ, Patrick E, Law ME, Yang G, Kim HY, Kim J, Baca AG, Allerman AA, Sanchez C. Effect of proton irradiation on DC performance and reliability of circular-shaped AlGaN/GaN high electron mobility transistors Ecs Transactions. 61: 179-185. DOI: 10.1149/06104.0179ecst  0.96
2014 Yadav A, Schwarz C, Shatkhin M, Wang L, Flitsiyan E, Chernyak L, Lu L, Hwang YH, Ren F, Pearton SJ, Lubomirsky I. Effect of annealing on electronic carrier transport properties of gamma- Irradiated AlGaN/GaN high electron mobility transistors Ecs Transactions. 61: 171-177. DOI: 10.1149/06104.0171ecst  0.96
2014 Kang TS, Cheney DJ, Gila BP, Ren F, Pearton SJ. Investigation of traps in AlGaN/GaN HEMTs by sub-bandgap optical pumping under DC and gate-lag measurement Ecs Transactions. 61: 153-158. DOI: 10.1149/06104.0153ecst  0.96
2014 Hwang YH, Kang TS, Ren F, Pearton SJ. Novel approach to improve heat dissipation of AlGaN/GaN high electron mobility transistors with a Cu filled via under device active area Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4896593  0.44
2014 Hwang YH, Ahn S, Chen D, Ren F, Gila BP, Hays D, Pearton SJ, Lo CF, Johnson JW. High breakdown voltage in AlN/GaN metal-insulator-semiconductor high-electron-mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32. DOI: 10.1116/1.4891966  0.96
2014 Hwang YH, Hsieh YL, Lei L, Li S, Ren F, Pearton SJ, Yadav A, Schwarz C, Shatkhin M, Wang L, Flitsiyan E, Chernyak L, Baca AG, Allerman AA, Sanchez CA, et al. Effect of low dose γ-irradiation on DC performance of circular AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 32. DOI: 10.1116/1.4868632  0.44
2013 Kim BJ, Yang G, Kim HY, Baik KH, Mastro MA, Hite JK, Eddy CR, Ren F, Pearton SJ, Kim J. GaN-based ultraviolet light-emitting diodes with AuCl₃-doped graphene electrodes. Optics Express. 21: 29025-30. PMID 24514418  0.76
2013 Park H, Baik KH, Kim J, Ren F, Pearton SJ. A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells. Optics Express. 21: 12908-13. PMID 23736510  0.76
2013 Yang G, Lee C, Kim J, Ren F, Pearton SJ. Flexible graphene-based chemical sensors on paper substrates. Physical Chemistry Chemical Physics : Pccp. 15: 1798-801. PMID 23262787 DOI: 10.1039/c2cp43717a  0.76
2013 Kim BJ, Yang G, Kim HY, Baik KH, Mastro MA, Hite JK, Eddy CR, Ren F, Pearton SJ, Kim J. GaN-based ultraviolet light-emitting diodes with AuCl3-doped graphene electrodes Optics Express. 21: 29025-29030. DOI: 10.1364/OE.21.029025  0.96
2013 Hwang YS, Liu L, Ren F, Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Kolin NG, Boiko VM, Vereyovkin SS, Ermakov VS, Lo CF, Laboutin O, Cao Y, Johnson JW, ... ... Pearton SJ, et al. Effect of electron irradiation on AlGaN/GaN and InAlN/GaN heterojunctions Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4795210  0.96
2013 Liu L, Lo CF, Xi Y, Wang Y, Ren F, Pearton SJ, Kim HY, Kim J, Fitch RC, Walker DE, Chabak KD, Gillespie JK, Tetlak SE, Via GD, Crespo A, et al. Dependence on proton energy of degradation of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4788904  0.96
2013 Liu L, Lo CF, Xi Y, Ren F, Pearton SJ, Laboutin O, Cao Y, Johnson JW, Kravchenko II. Effect of buffer structures on AlGaN/GaN high electron mobility transistor reliability Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4773060  0.96
2013 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Pearton SJ, Ren F, Lui L, Johnson JW, Kargin NI, Ryzhuk RV. Deep centers and persistent photocapacitance in AlGaN/GaN high electron mobility transistor structures grown on Si substrates Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4773057  0.96
2013 Cheney DJ, Douglas EA, Liu L, Lo CF, Xi YY, Gila BP, Ren F, Horton D, Law ME, Smith DJ, Pearton SJ. Reliability studies of AlGaN/GaN high electron mobility transistors Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/7/074019  0.96
2013 Hung SC, Woon WY, Lan SM, Ren F, Pearton SJ. Characteristics of carbon monoxide sensors made by polar and nonpolar zinc oxide nanowires gated AlGaN/GaN high electron mobility transistor Applied Physics Letters. 103. DOI: 10.1063/1.4818671  0.96
2013 Schwarz C, Yadav A, Shatkhin M, Flitsiyan E, Chernyak L, Kasiyan V, Liu L, Xi YY, Ren F, Pearton SJ, Lo CF, Johnson JW, Danilova E. Gamma irradiation impact on electronic carrier transport in AlGaN/GaN high electron mobility transistors Applied Physics Letters. 102. DOI: 10.1063/1.4792240  0.96
2013 Lo CF, Xi Y, Liu L, Pearton SJ, Doré S, Hsu CH, Dabiran AM, Chow PP, Ren F. Effect of temperature on CO sensing response in air ambient by using zno nanorod-gated AlGaN/GaN high electron mobility transistors Sensors and Actuators, B: Chemical. 176: 708-712. DOI: 10.1016/j.snb.2012.10.051  0.96
2012 Heo YW, Pearton SJ, Norton DP. Size-dependent electrical conductivity of indium zinc oxide deposited by RF magnetron sputtering. Journal of Nanoscience and Nanotechnology. 12: 3264-7. PMID 22849102 DOI: 10.1166/JNN.2012.5635  0.64
2012 Cheney DJ, Douglas EA, Liu L, Lo CF, Gila BP, Ren F, Pearton SJ. Degradation mechanisms for GaN and GaAs high speed transistors Materials. 5: 2498-2520. DOI: 10.3390/ma5122498  0.96
2012 Cheney D, Deist R, Gila B, Ren F, Whiting P, Navales J, Douglas E, Pearton S. Determination of AlGaN/GaN HEMT reliability using optical pumping as a characterization method Materials Research Society Symposium Proceedings. 1432: 143-149. DOI: 10.1557/opl.2012.1138  0.96
2012 Chu BH, Chin BD, Baik KH, Stephen JP, Ren F, Jang S. Improved organic light emitting diodes using cryogenic lif/al deposition Japanese Journal of Applied Physics. 51. DOI: 10.1143/JJAP.51.09MH04  0.48
2012 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Pearton SJ, Ren F, Liu L, Johnson JW, Lim W, Kolin NG, Veryovkin SS, Ermakov VS. Comparison of neutron irradiation effects in AlGaN/AlN/GaN, AlGaN/GaN, and InAlN/GaN heterojunctions Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4766727  0.96
2012 Lo CF, Liu L, Ren F, Pearton SJ, Gila BP, Kim HY, Kim J, Laboutin O, Cao Y, Johnson JW, Kravchenko II. Proton irradiation energy dependence of dc and rf characteristics on InAlN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.4729285  0.96
2012 Lo CF, Liu L, Chu BH, Ren F, Pearton SJ, Doré S, Hsu CH, Kim J, Dabiran AM, Chow PP. Carbon monoxide detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors in different temperature environments Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3672010  0.96
2012 Lo CF, Liu L, Kang TS, Ren F, Laboutin O, Cao Y, Johnson JW, Polyakov AY, Smirnov NB, Govorkov AV, Belogorokhov IA, Belogorokhov AI, Pearton SJ. Effect of buffer layer structure on electrical and structural properties of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3671020  0.96
2012 Kang TS, Wang XT, Lo CF, Ren F, Pearton SJ, Laboutin O, Cao Y, Johnson JW, Kim J. Simulation and experimental study of ArF 193 nm laser lift-off AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3664283  0.96
2012 Cheney D, Deist R, Navales J, Gila B, Ren F, Pearton S. Determination of the reliability of AlGaN/GaN HEMTs through trap detection using optical pumping Technical Digest - Ieee Compound Semiconductor Integrated Circuit Symposium, Csic. DOI: 10.1109/CSICS.2012.6340104  0.96
2012 Kim BJ, Lee C, Mastro MA, Hite JK, Eddy CR, Ren F, Pearton SJ, Kim J. Buried graphene electrodes on GaN-based ultra-violet light-emitting diodes Applied Physics Letters. 101. DOI: 10.1063/1.4733981  0.96
2012 Jung Y, Wang X, Kim J, Hyun Kim S, Ren F, Pearton SJ. GaN-based light-emitting diodes on origami substrates Applied Physics Letters. 100. DOI: 10.1063/1.4726123  0.96
2012 Cheney DJ, Deist R, Gila B, Navales J, Ren F, Pearton SJ. Trap detection in electrically stressed AlGaN/GaN HEMTs using optical pumping Microelectronics Reliability. 52: 2884-2888. DOI: 10.1016/j.microrel.2012.08.018  0.96
2012 Whiting PG, Rudawski NG, Holzworth MR, Pearton SJ, Jones KS, Liu L, Kang TS, Ren F. Under-gate defect formation in Ni-gate AlGaN/GaN high electron mobility transistors Microelectronics Reliability. 52: 2542-2546. DOI: 10.1016/j.microrel.2012.05.015  0.96
2012 Douglas EA, Chang CY, Gila BP, Holzworth MR, Jones KS, Liu L, Kim J, Jang S, Via GD, Ren F, Pearton SJ. Investigation of the effect of temperature during off-state degradation of AlGaN/GaN High Electron Mobility Transistors Microelectronics Reliability. 52: 23-28. DOI: 10.1016/j.microrel.2011.09.018  0.96
2012 Hung ST, Chang CJ, Hsu CH, Chu BH, Lo CF, Hsu CC, Pearton SJ, Holzworth MR, Whiting PG, Rudawski NG, Jones KS, Dabiran A, Chow P, Ren F. SnO 2 functionalized AlGaN/GaN high electron mobility transistor for hydrogen sensing applications International Journal of Hydrogen Energy. 37: 13783-13788. DOI: 10.1016/j.ijhydene.2012.03.124  0.96
2011 Lo CF, Liu L, Ren F, Kim HY, Kim J, Pearton SJ, Laboutin O, Cao Y, Johnson JW, Kravchenko II. Effects of proton irradiation on dc characteristics of InAlN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3644480  0.96
2011 Lo CF, Ren F, Pearton SJ, Polyakov AY, Smirnov NB, Govorkov AV, Belogorokhov IA, Belogorokhov AI, Reznik VY, Johnson JW. Deep traps and thermal measurements on AlGaN/GaN on Si transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3605304  0.96
2011 Lo CF, Kang TS, Liu L, Ren F, Pearton SJ, Kim J, Jang S, Laboutin O, Cao Y, Johnson JW. Effects of silicon nitride passivation on isolation-blocking voltage in algan/gan high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3593002  0.96
2011 Chang CY, Douglas EA, Kim J, Lu L, Lo CF, Chu BH, Cheney DJ, Gila BP, Ren F, Via GD, Cullen DA, Zhou L, Smith DJ, Jang S, Pearton SJ. Electric-field-driven degradation in off-state step-stressed AlGaN/GaN high-electron mobility transistors Ieee Transactions On Device and Materials Reliability. 11: 187-193. DOI: 10.1109/TDMR.2010.2103314  0.96
2011 Lo CF, Chu BH, Pearton SJ, Dabiran A, Chow PP, Doré S, Hung SC, Chen CW, Ren F. Effect of temperature on CO detection sensitivity of ZnO nanorod-gated AlGaN/GaN high electron mobility transistors Applied Physics Letters. 99. DOI: 10.1063/1.3647561  0.96
2011 Johnson JL, Behnam A, An Y, Pearton SJ, Ural A. Experimental study of graphitic nanoribbon films for ammonia sensing Journal of Applied Physics. 109. DOI: 10.1063/1.3597635  0.96
2011 Holzworth MR, Rudawski NG, Pearton SJ, Jones KS, Lu L, Kang TS, Ren F, Johnson JW. Characterization of the gate oxide of an AlGaN/GaN high electron mobility transistor Applied Physics Letters. 98. DOI: 10.1063/1.3569715  0.96
2011 Douglas EA, Chang CY, Cheney DJ, Gila BP, Lo CF, Lu L, Holzworth R, Whiting P, Jones K, Via GD, Kim J, Jang S, Ren F, Pearton SJ. AlGaN/GaN high electron mobility transistor degradation under on- and off-state stress Microelectronics Reliability. 51: 207-211. DOI: 10.1016/j.microrel.2010.09.024  0.96
2011 Chu BH, Chang CY, Kroll K, Denslow N, Wang YL, Pearton SJ, Lin J, Dabiran AM, Wowchak AM, Cui B, Chow PP, Johnson JW, Rajagopal P, Roberts JC, Piner EL, et al. Detection of vitellogenin, an endocrine disrupter biomarker, using AlGaN/GaN high electron mobility transistors Physica Status Solidi (C) Current Topics in Solid State Physics. 8: 2486-2488. DOI: 10.1002/pssc.201001171  0.96
2010 Chu BH, Kang BS, Hung SC, Chen KH, Ren F, Sciullo A, Gila BP, Pearton SJ. Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate. Journal of Diabetes Science and Technology. 4: 171-9. PMID 20167182  0.76
2010 Chu BH, Wang YL, Wang HT, Chang CY, Lo CF, Pearton SJ, Papadi G, Coleman JK, Sheppard BJ, Dungen CF, Kroll K, Denslow N, Dabiran A, Chow PP, Johnson JW, et al. AlGaN/GaN high electron mobility transistor based sensors for environmental and bio-applications Nanoscience and Nanotechnology Letters. 2: 120-128. DOI: 10.1166/nnl.2010.1068  0.96
2010 Chu BH, Wang YL, Chen KH, Chang CY, Lo CF, Pearton SJ, Papadi G, Coleman JK, Sheppard BJ, Dungen CF, Kroll K, Denslow N, Dabiran A, Chow PP, Johnson JW, et al. AlGaN/GaN high-electron mobility transistor-based sensors for environmental and bio-applications Proceedings of Spie - the International Society For Optical Engineering. 7679. DOI: 10.1117/12.844995  0.96
2010 Chang CY, Anderson T, Hite J, Lu L, Lo CF, Chu BH, Cheney DJ, Douglas EA, Gila BP, Ren F, Via GD, Whiting P, Holzworth R, Jones KS, Jang S, ... Pearton SJ, et al. Reverse gate bias-induced degradation of AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 1044-1047. DOI: 10.1116/1.3491038  0.96
2010 Wang YL, Chang CY, Lim W, Pearton SJ, Norton DP, Chu BH, Lo CF, Ren F, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Oxygen gas sensing at low temperature using indium zinc oxide-gated AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 376-379. DOI: 10.1116/1.3368467  0.96
2010 Chu BH, Lin HW, Gwo S, Wang YL, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Ren F. Chloride ion detection by InN gated AlGaN/GaN high electron mobility transistors Materials Research Society Symposium Proceedings. 1202: 27-33. DOI: 10.1116/1.3271253  0.96
2010 Lo CF, Kang TS, Liu L, Chang CY, Pearton SJ, Kravchenko II, Laboutin O, Johnson JW, Ren F. Isolation blocking voltage of nitrogen ion-implanted AlGaN/GaN high electron mobility transistor structure Applied Physics Letters. 97. DOI: 10.1063/1.3533381  0.96
2010 Sung SY, Choi JH, Han UB, Lee KC, Lee JH, Kim JJ, Lim W, Pearton SJ, Norton DP, Heo YW. Effects of ambient atmosphere on the transfer characteristics and gate-bias stress stability of amorphous indium-gallium-zinc oxide thin-film transistors Applied Physics Letters. 96. DOI: 10.1063/1.3357431  0.96
2010 Lim W, Douglas EA, Norton DP, Pearton SJ, Ren F, Heo YW, Son SY, Yuh JH. Low-voltage indium gallium zinc oxide thin film transistors on paper substrates Applied Physics Letters. 96. DOI: 10.1063/1.3309753  0.96
2010 Chen CW, Pan CJ, Tsao FC, Liu YL, Kuo CW, Kuo CH, Chi GC, Chen PH, Lai WC, Hsueh TH, Tun CJ, Chang CY, Pearton SJ, Ren F. Catalyst-free ZnO nanowires grown on a-plane GaN Vacuum. 84: 803-806. DOI: 10.1016/j.vacuum.2009.10.043  0.76
2009 Anderson T, Ren F, Pearton S, Kang BS, Wang HT, Chang CY, Lin J. Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices. Sensors (Basel, Switzerland). 9: 4669-94. PMID 22408548 DOI: 10.3390/s90604669  0.96
2009 Chu BH, Chang CY, Leu LC, Norton D, Lee J, Lele T, Jiang P, Tseng Y, Pearton SJ, Gupte A, Keselowsky B, Ren F. Hydrothermally grown ZnO nanorods as cell adhesion control coating for implant devices Ecs Transactions. 19: 147-157. DOI: 10.1149/1.3120696  0.96
2009 Wang YL, Chu BH, Chen KH, Chang CY, Lele TP, Tseng Y, Pearton SJ, Ramage J, Hooten D, Dabirand A, Chow PP, Ren F. Real-time detection of botulinum toxin with AlGaN/GaN high electron mobility transistors Ecs Transactions. 19: 123-128. DOI: 10.1149/1.3120693  0.76
2009 Chu BH, Kang BS, Chang CY, Ren F, Goh A, Sciullo A, Wu W, Lin J, Gila BP, Pearton SJ, Johnson JW, Piner EL, Linthicum KJ. AlGaN/GaN high electron mobility transistors integrated into wireless detection system for glucose and pH in exhaled breath condensate Ecs Transactions. 19: 85-97. DOI: 10.1149/1.3120690  0.96
2009 Chen KH, Kang BS, Wang HT, Lele TP, Ren F, Wang YL, Chang CY, Pearton SJ, Dennis DM, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. c-erbB-2 sensing using AlGaN/GaN high electron mobility transistors for breast cancer detection Ecs Transactions. 19: 57-63. DOI: 10.1149/1.3120686  0.96
2009 Hung SC, Chu BH, Lo CF, Hicks B, Wang YL, Chang CY, Pearton SJ, Johnson JW, Rajagopa P, Roberts JC, Piner EL, Linthicum KJ, Chi GC, Ren F. Detection of Cl-ions with AlGaN/GaN high electron mobility transistors Ecs Transactions. 19: 31-37. DOI: 10.1149/1.3120683  0.96
2009 Lan YL, Lin HC, Liu HH, Lee GY, Ren F, Pearton SJ, Chang MN, Chyi JI. Improved surface morphology and edge definition for ohmic contacts to AlGaN/GaN heterostructures Proceedings of Spie - the International Society For Optical Engineering. 7216. DOI: 10.1117/12.810165  0.96
2009 Chen KH, Ren F, Pais A, Xie H, Gila BP, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Cu-plated through-wafer vias for AlGaN/GaN high electron mobility transistors on Si Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2166-2169. DOI: 10.1116/1.3212931  0.96
2009 Lim W, Douglas EA, Lee J, Jang J, Craciun V, Norton DP, Pearton SJ, Ren F, Son SY, Yuh JH, Shen H, Chang W. Transparent dual-gate InGaZnO thin film transistors: Or gate operation Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2128-2131. DOI: 10.1116/1.3196787  0.96
2009 Wang YL, Chu BH, Chen KH, Chang CY, Lele TP, Papadi G, Coleman JK, Sheppard BJ, Dungen CF, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, et al. Fast detection of a protozoan pathogen, Perkinsus marinus, using AlGaN/GaN high electron mobility transistors Applied Physics Letters. 94. DOI: 10.1063/1.3153130  0.96
2009 Chen JY, Pan CJ, Tsao FC, Kuo CH, Chi GC, Pong BJ, Chang CY, Norton DP, Pearton SJ. Characterization of ZnO nanowires grown on Si (100) with and without Au catalyst Vacuum. 83: 1076-1079. DOI: 10.1016/j.vacuum.2009.02.001  0.64
2008 Pearton SJ, Kang BS, Gila BP, Norton DP, Kryliouk O, Ren F, Heo YW, Chang CY, Chi GC, Wang WM, Chen LC. GaN, ZnO and InN nanowires and devices. Journal of Nanoscience and Nanotechnology. 8: 99-110. PMID 18468056 DOI: 10.1166/JNN.2008.N01  0.76
2008 Yu X, Li C, Low ZN, Lin J, Anderson TJ, Wang HT, Ren F, Wang YL, Chang CY, Pearton SJ, Hsu CH, Osinsky A, Dabiran A, Chow P, Balaban C, et al. Wireless hydrogen sensor network using AlGaN/GaN high electron mobility transistor differential diode sensors Ecs Transactions. 16: 127-137. DOI: 10.1149/1.2983168  0.96
2008 Kim HY, Kim J, Yun SP, Kim KR, Anderson TJ, Ren F, Pearton SJ. AlGaN/GaN high electron mobility transistors irradiated with 17 MeV protons Journal of the Electrochemical Society. 155: H513-H515. DOI: 10.1149/1.2917256  0.96
2008 Wang YL, Lim W, Covert LN, Anderson TJ, Lin J, Pearton SJ, Norton DP, Ren F. Room temperature deposited enhancement mode and depletion mode indium znic oxide thin film transistors Ecs Transactions. 13: 159-164. DOI: 10.1149/1.2913090  0.96
2008 Kang BS, Wang HT, FRen, Chancellor TJ, Lele TP, Tseng Y, Pearton SJ, Morey TE, Dennis DM, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Dabiran A, et al. AlGaN/GaN HEMT and ZnO nanorod based sensors for chemical and bio-applications Ecs Transactions. 13: 53-63. DOI: 10.1149/1.2913080  0.76
2008 Voss LF, Ip K, Pearton SJ, Shul RJ, Overberg ME, Baca AG, Sanchez C, Stevens J, Martinez M, Armendariz MG, Wouters GA. SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 487-494. DOI: 10.1116/1.2837849  0.96
2008 Ivill M, Pearton SJ, Rawal S, Leu L, Sadik P, Das R, Hebard AF, Chisholm M, Budai JD, Norton DP. Structure and magnetism of cobalt-doped ZnO thin films New Journal of Physics. 10. DOI: 10.1088/1367-2630/10/6/065002  0.96
2008 Wang YL, Chu BH, Chen KH, Chang CY, Lele TP, Tseng Y, Pearton SJ, Ramage J, Hooten D, Dabiran A, Chow PP, Ren F. Botulinum toxin detection using AlGaNGaN high electron mobility transistors Applied Physics Letters. 93. DOI: 10.1063/1.3056612  0.76
2008 Chu BH, Leu LC, Chang CY, Lugo F, Norton D, Lele T, Keselowsky B, Pearton SJ, Ren F. Conformable coating of SiO2 on hydrothermally grown ZnO nanorods Applied Physics Letters. 93. DOI: 10.1063/1.3033407  0.96
2008 Lim W, Wright JS, Gila BP, Johnson JL, Ural A, Anderson T, Ren F, Pearton SJ. Room temperature hydrogen detection using Pd-coated GaN nanowires Applied Physics Letters. 93. DOI: 10.1063/1.2975173  0.96
2008 Chen KH, Kang BS, Wang HT, Lele TP, Ren F, Wang YL, Chang CY, Pearton SJ, Dennis DM, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. C-erbB-2 sensing using AlGaNGaN high electron mobility transistors for breast cancer detection Applied Physics Letters. 92. DOI: 10.1063/1.2926656  0.76
2008 Yu X, Li C, Low ZN, Lin J, Anderson TJ, Wang HT, Ren F, Wang YL, Chang CY, Pearton SJ, Hsu CH, Osinsky A, Dabiran A, Chow P, Balaban C, et al. Wireless hydrogen sensor network using AlGaN/GaN high electron mobility transistor differential diode sensors Sensors and Actuators, B: Chemical. 135: 188-194. DOI: 10.1016/j.snb.2008.08.005  0.96
2008 Chen KH, Wang HW, Kang BS, Chang CY, Wang YL, Lele TP, Ren F, Pearton SJ, Dabiran A, Osinsky A, Chow PP. Low Hg(II) ion concentration electrical detection with AlGaN/GaN high electron mobility transistors Sensors and Actuators, B: Chemical. 134: 386-389. DOI: 10.1016/j.snb.2008.05.012  0.76
2008 Voss LF, Stafford L, Hlad M, Gila BP, Abernathy CR, Pearton SJ, Ren F, Kravchenko I. High temperature Ohmic contacts to p-type GaN for use in light emitting applications Physica Status Solidi (C) Current Topics in Solid State Physics. 5: 2241-2243. DOI: 10.1002/pssc.200778644  0.96
2007 Pearton SJ, Lele T, Tseng Y, Ren F. Penetrating living cells using semiconductor nanowires. Trends in Biotechnology. 25: 481-2. PMID 17935806 DOI: 10.1016/j.tibtech.2007.07.011  0.76
2007 Pearton SJ, Norton DP, Ren F. The promise and perils of wide-bandgap semiconductor nanowires for sensing, electronic, and photonic applications. Small (Weinheim An Der Bergstrasse, Germany). 3: 1144-50. PMID 17520589 DOI: 10.1002/smll.200700042  0.76
2007 Wang HT, Kang BS, Chancellor TF, Lele TP, Tseng Y, Ren F, Pearton SJ, Johnson WJ, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Rapid electrical detection of Hg(II) ions with AlGaN/GaN high electron mobility transistors Ecs Transactions. 11: 83-89. DOI: 10.1149/1.2783860  0.76
2007 Wang HT, Kang BS, Chancellor TF, Lele TP, Tseng Y, Ren F, Pearton SJ, Dabiran A, Osinsky A, Chow PP. Selective detection of Hg(II) ions from Cu(II) and Pb(II) using AlGaNGaN high electron mobility transistors Electrochemical and Solid-State Letters. 10: 150-153. DOI: 10.1149/1.2778997  0.76
2007 Kang BS, Wang HT, Lele TP, Tseng Y, Ren F, Pearton SJ, Johnson JW, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Prostate specific antigen detection using AlGaNGaN high electron mobility transistors Applied Physics Letters. 91. DOI: 10.1063/1.2772192  0.76
2007 Wang HT, Kang BS, Chancellor TF, Lele TP, Tseng Y, Ren F, Pearton SJ, Johnson WJ, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Fast electrical detection of Hg(II) ions with AlGaN/GaN high electron mobility transistors Applied Physics Letters. 91. DOI: 10.1063/1.2764554  0.76
2007 Voss LF, Stafford L, Khanna R, Gila BP, Abernathy CR, Pearton SJ, Ren F, Kravchenko II. Ohmic contacts to p -type GaN based on TaN, TiN, and ZrN Applied Physics Letters. 90. DOI: 10.1063/1.2742572  0.96
2007 Jun J, Chou B, Lin J, Phipps A, Shengwen X, Ngo K, Johnson D, Kasyap A, Nishida T, Wang HT, Kang BS, Ren F, Tien LC, Sadik PW, Norton DP, ... ... Pearton SJ, et al. A hydrogen leakage detection system using self-powered wireless hydrogen sensor nodes Solid-State Electronics. 51: 1018-1022. DOI: 10.1016/j.sse.2007.05.019  0.76
2007 Wright JS, Khanna R, Voss LF, Stafford L, Gila BP, Norton DP, Pearton SJ, Wang HT, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Shen H, LaRoche JR, et al. Effect of cryogenic temperature deposition on Au contacts to bulk, single-crystal n-type ZnO Applied Surface Science. 253: 3766-3772. DOI: 10.1016/j.apsusc.2006.07.090  0.76
2007 Voss LF, Stafford L, Khanna R, Gila BP, Abernathy CR, Pearton SJ, Ren F, Kravchenko II. Thermal stability of nitride-based diffusion barriers for ohmic contacts to n-GaN Journal of Electronic Materials. 36: 1662-1668. DOI: 10.1007/s11664-007-0277-3  0.96
2007 Pearton SJ, Norton DP, Ivill MP, Hebard AF, Zavada JM, Chen WM, Buyanova IA. Ferromagnetism in transition-metal doped ZnO Journal of Electronic Materials. 36: 462-471. DOI: 10.1007/s11664-006-0034-z  0.96
2007 Bang J, Kim K, Mok S, Ren F, Pearton SJ, Baik KH, Kim SH, Kim J, Shin K. Simple fabrication of nanoporous films on ZnO for enhanced light emission Physica Status Solidi (a) Applications and Materials Science. 204: 3417-3422. DOI: 10.1002/pssa.200723127  0.96
2007 Pearton SJ, Norton DP, Ivill MP, Hebard AF, Chen WM, Buyanova IA, Zavada JM. Transition metal doped ZnO for spintronics Materials Research Society Symposium Proceedings. 999: 43-54.  0.96
2006 Chen JJ, Jang S, Anderson TJ, Ren F, Li YJ, Kim HS, Rawal S, Gila BP, Norton DP, Pearton SJ, Osinsky A, Dong JW, Chu SNG. Fabrication process of ZnO-based LEDs Ecs Transactions. 2: 153-172. DOI: 10.1149/1.2204888  0.96
2006 Anderson T, Ren F, Pearton SJ, Mastro MA, Holm RT, Henry RL, Eddy CR, Lee JY, Lee KY, Kim J. Laser ablation of via holes in GaN and AlGaN/GaN high electron mobility transistor structures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 24: 2246-2249. DOI: 10.1116/1.2335435  0.96
2006 Nishida T, Lin J, Ngo K, Ren F, Norton D, Pearton S, Cattafesta L, Sheplak M, Jun J, Kasyap A, Johnson D, Phipps A. Wireless hydrogen sensor self-powered using ambient vibration and light American Society of Mechanical Engineers, Aerospace Division (Publication) Ad. DOI: 10.1115/IMECE2006-14644  0.96
2006 Zavada JM, Nepal N, Lin JY, Jiang HX, Brown E, Hömmerich U, Hite J, Thaler GT, Abernathy CR, Pearton SJ, Gwilliam R. Ultraviolet photoluminescence from Gd-implanted AlN epilayers Applied Physics Letters. 89. DOI: 10.1063/1.2357552  0.96
2006 Wang HT, Jang S, Anderson T, Chen JJ, Kang BS, Ren F, Voss LF, Stafford L, Khanna R, Gila BP, Pearton SJ, Shen H, LaRoche JR, Smith KV. Increased Schottky barrier heights for Au on n- And p-type GaN using cryogenic metal deposition Applied Physics Letters. 89. DOI: 10.1063/1.2356698  0.76
2006 Kang BS, Pearton SJ, Chen JJ, Ren F, Johnson JW, Therrien RJ, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ. Electrical detection of deoxyribonucleic acid hybridization with AlGaN/GaN high electron mobility transistors Materials Research Society Symposium Proceedings. 955: 88-93. DOI: 10.1063/1.2354491  0.96
2006 Lopatiuk-Tirpak O, Schoenfeld WV, Chernyak L, Xiu FX, Liu JL, Jang S, Ren F, Pearton SJ, Osinsky A, Chow P. Carrier concentration dependence of acceptor activation energy in p-type ZnO Applied Physics Letters. 88. DOI: 10.1063/1.2206700  0.96
2005 Sippel-Oakley J, Wang HT, Kang BS, Wu Z, Ren F, Rinzler AG, Pearton SJ. Carbon nanotube films for room temperature hydrogen sensing. Nanotechnology. 16: 2218-21. PMID 20817998 DOI: 10.1088/0957-4484/16/10/040  0.96
2005 Kao CJ, Kwon YW, Heo YW, Norton DP, Pearton SJ, Ren F, Chi GC. Comparison of ZnO metal-oxide-semiconductor field effect transistor and metal-semiconductor field effect transistor structures grown on sapphire by pulsed laser deposition Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1024-1028. DOI: 10.1116/1.1924613  0.96
2005 Polyakov AY, Smirnov NB, Govorkov AV, Kozhukhova EA, Heo YW, Ivill MP, Ip K, Norton DP, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Steiner T. Properties of Mn- and Co-doped bulk ZnO crystals Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 274-279. DOI: 10.1116/1.1856476  0.96
2005 Tien LC, Sadik PW, Norton DP, Voss LF, Pearton SJ, Wang HT, Kang BS, Ren F, Jun J, Lin J. Hydrogen sensing at room temperature with Pt-coated ZnO thin films and nanorods Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2136070  0.76
2005 Khanna R, Han SY, Pearton SJ, Schoenfeld D, Schoenfeld WV, Ren F. High dose Co-60 gamma irradiation of InGaN quantum well light-emitting diodes Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2132085  0.96
2005 Wang HT, Kang BS, Ren F, Fitch RC, Gillespie JK, Moser N, Jessen G, Jenkins T, Dettmer R, Via D, Crespo A, Gila BP, Abernathy CR, Pearton SJ. Comparison of gate and drain current detection of hydrogen at room temperature with AlGaN/GaN high electron mobility transistors Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2117617  0.96
2005 Kang BS, Kim J, Jang S, Ren F, Johnson JW, Therrien RJ, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Chu SNG, Baik K, Gila BP, Abernathy CR, Pearton SJ. Capacitance pressure sensor based on GaN high-electron-mobility transistor-on-Si membrane Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1952568  0.96
2005 Polyakov AY, Smirnov NB, Govorkov AV, Shlensky AA, McGuire K, Harley E, McNeil LE, Khanna R, Pearton SJ, Zavada JM. Properties and annealing stability of Fe doped semi-insulating GaN structures Physica Status Solidi C: Conferences. 2: 2476-2479. DOI: 10.1002/pssc.200461267  0.96
2004 Moser N, Fitch RC, Crespo A, Gillespie JK, Jessen GH, Via GD, Luo B, Ren F, Gila BP, Abernathy CR, Pearton SJ. Dramatic Improvements in AlGaN/GaN HEMT device isolation characteristics after UV-ozone pretreatment Journal of the Electrochemical Society. 151: G915-G918. DOI: 10.1149/1.1803561  0.96
2004 Kang BS, Kim S, La Roche JR, Ren F, Fitch RC, Gillespie JK, Moser N, Jenkins I, Sewell J, Via D, Crespo A, Dabiran AM, Chow PP, Osinsky A, Pearton SJ. Annealing temperature stability of Ir and Ni-based Ohmic contacts on AlGaN/GaN high electron mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 22: 2635-2639. DOI: 10.1116/1.1814111  0.96
2004 Pearton SJ, Abernathy CR, Thaler GT, Frazier RM, Norton DP, Ren F, Park YD, Zavada JM, Buyanova IA, Chen WM, Hebard AF. Wide bandgap GaN-based semiconductors for spintronics Journal of Physics Condensed Matter. 16. DOI: 10.1088/0953-8984/16/7/R03  0.96
2004 Hebard AF, Rairigh RP, Kelly JG, Pearton SJ, Abernathy CR, Chu SNG, Wilson RG. Mining for high Tc ferromagnetism in ion-implanted dilute magnetic semiconductors Journal of Physics D: Applied Physics. 37: 511-517. DOI: 10.1088/0022-3727/37/4/001  0.96
2004 Kang BS, Kim S, Ren F, Johnson JW, Therrien RJ, Rajagopal P, Roberts JC, Piner EL, Linthicum KJ, Chu SNG, Baik K, Gila BP, Abernathy CR, Pearton SJ. Pressure-induced changes in the conductivity of AlGaN/GaN high-electron mobility-transistor membranes Applied Physics Letters. 85: 2962-2964. DOI: 10.1063/1.1800282  0.96
2004 Fitch RC, Gillespie JK, Moser N, Jenkins T, Sewell J, Via D, Crespo A, Dabiran AM, Chow PP, Osinsky A, La Roche JR, Ren F, Pearton SJ. Properties of Ir-based Ohmic contacts to AlGaN/GaN high electron mobility transistors Applied Physics Letters. 84: 1495-1497. DOI: 10.1063/1.1651649  0.96
2004 Kim J, Ren F, Chung GY, MacMillan MF, Baca AG, Briggs RD, Schoenfeld D, Pearton SJ. Comparison of stability of WSi x/SiC and Ni/SiC Schottky rectifiers to high dose gamma-ray irradiation Applied Physics Letters. 84: 371-373. DOI: 10.1063/1.1642271  0.96
2004 Mastro MA, Tsvetkov D, Soukhoveev V, Usikov A, Dmitriev V, Luo B, Ren F, Baik KH, Pearton SJ. RF performance of HVPE-grown AlGaN/GaN HEMTs Solid-State Electronics. 48: 179-182. DOI: 10.1016/S0038-1101(03)00107-2  0.96
2004 Kang BS, Louche G, Duran RS, Gnanou Y, Pearton SJ, Ren F. Gateless AlGaN/GaN HEMT response to block co-polymers Proceedings - Electrochemical Society. 2: 39-45. DOI: 10.1016/j.sse.2003.10.002  0.96
2003 Overberg ME, Baik KH, Thaler GT, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Tang W, Stavola M, Zavada JM. Hydrogenation Effects on Magnetic Properties of GaMnP Electrochemical and Solid-State Letters. 6. DOI: 10.1149/1.1612725  0.96
2003 Luo B, Kim J, Ren F, Baca AG, Briggs RD, Gila BP, Onstine AH, Allums KK, Abernathy CR, Pearton SJ, Dwivedi R, Fogarty TN, Wilkins R. Effect of high-energy proton irradiation on DC characteristics and current collapse in MgO and Sc2O3 passivated AlGaN/GaN HEMTs Electrochemical and Solid-State Letters. 6. DOI: 10.1149/1.1540791  0.96
2003 Baik KH, Frazier RM, Thaler GT, Abernathy CR, Pearton SJ, Kelly J, Rairigh R, Hebard AF, Tang W, Stavola M, Zavada JM. Effects of hydrogen incorporation in GaMnN Applied Physics Letters. 83: 5458-5460. DOI: 10.1063/1.1637151  0.96
2003 Moser NA, Gillespie JK, Via GD, Crespo A, Yannuzzi MJ, Jessen GH, Fitch RC, Luo B, Ren F, Gila BP, Onstine AH, Abernathy CR, Pearton SJ. Effects of surface treatments on isolation currents in AlGaN/GaN high-electron-mobility transistors Applied Physics Letters. 83: 4178-4180. DOI: 10.1063/1.1628394  0.96
2003 Frazier RM, Thaler GT, Abernathy CR, Pearton SJ, Nakarmi ML, Nam KB, Lin JY, Jiang HX, Kelly J, Rairigh R, Hebard AF, Zavada JM, Wilson RG. Transition metal ion implantation into AlGaN Journal of Applied Physics. 94: 4956-4960. DOI: 10.1063/1.1613375  0.96
2003 Frazier RM, Stapleton J, Thaler GT, Abernathy CR, Pearton SJ, Rairigh R, Kelly J, Hebard AF, Nakarmi ML, Nam KB, Lin JY, Jiang HX, Zavada JM, Wilson RG. Properties of Co-, Cr-, or Mn-implanted AlN Journal of Applied Physics. 94: 1592-1596. DOI: 10.1063/1.1586987  0.96
2003 Overberg ME, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Rairigh R, Kelly J, Theodoropoulou NA, Hebard AF, Wilson RG, Zavada JM. Ferromagnetic semiconductors based upon AlGaP Journal of Applied Physics. 93: 7861-7863. DOI: 10.1063/1.1556247  0.96
2003 Pearton SJ, Abernathy CR, Overberg ME, Thaler GT, Norton DP, Theodoropoulou N, Hebard AF, Park YD, Ren F, Kim J, Boatner LA. Wide band gap ferromagnetic semiconductors and oxides Journal of Applied Physics. 93: 1-13. DOI: 10.1063/1.1517164  0.96
2003 Lee JS, Khim ZG, Park YD, Norton DP, Theodoropoulou NA, Hebard AF, Budai JD, Boatner LA, Pearton SJ, Wilson RG. Magnetic properties of Co- and Mn-implanted BaTiO3, SrTiO 3 and KTaO3 Solid-State Electronics. 47: 2225-2230. DOI: 10.1016/S0038-1101(03)00202-8  0.96
2003 Gillespie JK, Fitch RC, Moser N, Jenkins T, Sewell J, Via D, Crespo A, Dabiran AM, Chow PP, Osinsky A, Mastro MA, Tsvetkov D, Soukhoveev V, Usikov A, Dmitriev V, ... ... Pearton SJ, et al. Uniformity of dc and rf performance of MBE-grown AlGaN/GaN HEMTS on HVPE-grown buffers Solid-State Electronics. 47: 1859-1862. DOI: 10.1016/S0038-1101(03)00140-0  0.96
2003 Overberg ME, Thaler GT, Frazier RM, Rairigh R, Kelly J, Abernathy CR, Pearton SJ, Hebard AF, Wilson RG, Zavada JM. Ferromagnetism in Mn- and Cr-implanted AlGaP Solid-State Electronics. 47: 1549-1552. DOI: 10.1016/S0038-1101(03)00098-4  0.96
2003 Nigam S, Kim J, Luo B, Ren F, Chung GY, Shenai K, Neudeck PG, Pearton SJ, Williams JR. Role of device area, mesa length and metal overlap distance on breakdown voltage of 4H-SiC p-i-n rectifiers Solid-State Electronics. 47: 1461-1464. DOI: 10.1016/S0038-1101(03)00072-8  0.96
2003 Kim J, Ren F, Baca AG, Briggs RD, Pearton SJ. High temperature thermal stability of Au/Ti/WSix Schottky contacts on n-type 4H-SiC Solid-State Electronics. 47: 1345-1350. DOI: 10.1016/S0038-1101(03)00069-8  0.96
2003 Nigam S, Kim J, Luo B, Ren F, Chung GY, Pearton SJ, Williams JR, Shenai K, Neudeck P. Effect of contact geometry on 4H-SiC rectifiers with junction termination extension Solid-State Electronics. 47: 57-60. DOI: 10.1016/S0038-1101(02)00273-3  0.96
2003 Nigam S, Kim J, Luo B, Ren F, Chung GY, Pearton SJ, Williams JR, Shenai K, Neudeck P. Influence of edge termination geometry on performance of 4H-SiC p-i-n rectifiers Solid-State Electronics. 47: 61-64. DOI: 10.1016/S0038-1101(02)00272-1  0.96
2003 Pearton SJ, Abernathy CR, Thaler GT, Frazier R, Ren F, Hebard AF, Park YD, Norton DP, Tang W, Stavola M, Zavada JM, Wilson RG. Effects of defects and doping on wide band gap ferromagnetic semiconductors Physica B: Condensed Matter. 340: 39-47. DOI: 10.1016/j.physb.2003.09.003  0.96
2003 Pearton SJ, Overberg ME, Thaler GT, Abernathy CR, Kim J, Ren F, Theodoropoulou N, Hebard AF, Park YD. Room temperature ferromagnetism in GaMnN and GaMnP Physica Status Solidi (a) Applied Research. 195: 222-227. DOI: 10.1002/pssa.200306283  0.96
2003 Overberg ME, Thaler GT, Frazier RM, Abernathy CR, Pearton SJ, Rairigh R, Kelly J, Theodoropoulou NA, Hebard AF, Wilson RG, Zavada JM. Magnetic properties of Mn-implanted AlGaP alloys Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 2093-2097.  0.96
2003 Pearton SJ, Abernathy CR, Thaler GT, Frazier R, Norton DP, Kelly J, Rairigh R, Hebard AF, Park YD, Zavada JM. Wide bandgap materials for semiconductor spintronics Materials Research Society Symposium - Proceedings. 799: 287-298.  0.96
2002 Johnson JW, Ren F, Pearton SJ, Baca AG, Han J, Dabiran AM, Chow PP. Performance of AlGaN/GaN high electron mobility transistors at nanoscale gate lengths. Journal of Nanoscience and Nanotechnology. 2: 325-32. PMID 12908259 DOI: 10.1166/JNN.2002.092  0.76
2002 Theodoropoulou N, Hebard AF, Overberg ME, Abernathy CR, Pearton SJ, Chu SN, Wilson RG. Unconventional carrier-mediated ferromagnetism above room temperature in ion-implanted (Ga, Mn)P:C. Physical Review Letters. 89: 107203. PMID 12225220 DOI: 10.1103/PhysRevLett.89.107203  0.96
2002 Overberg ME, Gila BP, Thaler GT, Abernathy CR, Pearton SJ, Theodoropoulou NA, McCarthy KT, Arnason SB, Hebard AF, Chu SNG, Wilson RG, Zavada JM, Park YD. Room temperature magnetism in GaMnP produced by both ion implantation and molecular-beam epitaxy Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 969-973. DOI: 10.1116/1.1477424  0.96
2002 Pearton SJ, Overberg ME, Thaler G, Abernathy CR, Theodoropoulou N, Hebard AF, Chu SNG, Wilson RG, Zavada JM, Polyakov AY, Osinsky AV, Norris PE, Chow PP, Wowchack AM, Van Hove JM, et al. Characterization of high dose Mn, Fe, and Ni implantation into p-GaN Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 20: 721-724. DOI: 10.1116/1.1465449  0.96
2002 Theodoropoulou N, Hebard AF, Chu SNG, Overberg ME, Abernathy CR, Pearton SJ, Wilson RG, Zavada JM, Park YD. Magnetic and structural properties of Fe, Ni, and Mn-implanted SiC Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 20: 579-582. DOI: 10.1116/1.1465447  0.96
2002 Theodoropoulou N, Hebard AF, Chu SNG, Overberg ME, Abernathy CR, Pearton SJ, Wilson RG, Zavada JM. Use of ion implantation to facilitate the discovery and characterization of ferromagnetic semiconductors Journal of Applied Physics. 91: 7499-7501. DOI: 10.1063/1.1452750  0.96
2002 Frei MR, Chiu TY, Abernathy CR, Ren F, Fullowan TR, Lothian J, Pearton SJ, Tseng B, Montgomery RK, Smith PR. Degradation of GaAs/AlGaAs heterojunction bipolar transistors with ion-implant isolation Solid-State Electronics. 46: 1301-1305. DOI: 10.1016/S0038-1101(02)00079-5  0.96
2002 Baca AG, Monier C, Chang PC, Briggs RD, Armendariz MG, Pearton SJ. Orientation and dielectric overlayer effects in InGaP/GaAs heterojunction bipolar transistors Solid-State Electronics. 46: 797-801. DOI: 10.1016/S0038-1101(02)00005-9  0.96
2002 Johnson JW, Han J, Baca AG, Briggs RD, Shul RJ, Wendt JR, Monier C, Ren F, Luo B, Chu SNG, Tsvetkov D, Dmitriev V, Pearton SJ. Comparison of AlGaN/GaN high electron mobility transistors grown on AlN/SiC templates or sapphire Solid-State Electronics. 46: 513-523. DOI: 10.1016/S0038-1101(01)00284-2  0.96
2002 Overberg ME, Thaler GT, Frazier RM, Gila BP, Abernathy CR, Pearton SJ, Theodoropoulou NA, Arnason SB, Hebard AF, Park YD. Ferromagnetic and paramagnetic semiconductors based upon GaN, AlGaN, and GaP Materials Research Society Symposium - Proceedings. 690: 9-14.  0.96
2002 Pearton SJ, Lee KP, Overberg ME, Abernathy CR, Theodoropoulou N, Hebard AF, Wilson RG, Chu SNG, Zavada J. Magnetism in SiC implanted with high doses of Fe and Mn Journal of Electronic Materials. 31: 336-339.  0.96
2002 Lee KP, Pearton SJ, Overberg ME, Abernathy CR, Wilson RG, Chu SNG, Theodoropolou N, Hebard AF, Zavada JM. Magnetic effects of direct ion implantation of Mn and Fe into p-GaN Journal of Electronic Materials. 31: 411-415.  0.96
2001 Theodoropoulou N, Lee KP, Overberg ME, Chu SN, Hebard AF, Abernathy CR, Pearton SJ, Wilson RG. Nanoscale magnetic regions formed in GaN implanted with Mn. Journal of Nanoscience and Nanotechnology. 1: 101-6. PMID 12914038 DOI: 10.1166/jnn.2001.004  0.96
2001 Theodoropoulou N, Hebard AF, Chu SNG, Overberg ME, Abernathy CR, Pearton SJ, Wilson RG, Zavada JM. Characterization of high dose Fe implantation into p-GaN Applied Physics Letters. 79: 3452-3454. DOI: 10.1063/1.1420406  0.96
2001 Theodoropoulou N, Hebard AF, Overberg ME, Abernathy CR, Pearton SJ, Chu SNG, Wilson RG. Magnetic and structural properties of Mn-implanted GaN Applied Physics Letters. 78: 3475-3477. DOI: 10.1063/1.1376659  0.96
2001 Johnson JW, Baca AG, Briggs RD, Shul RJ, Wendt JR, Monier C, Ren F, Pearton SJ, Dabiran AM, Wowchack AM, Polley CJ, Chow PP. Effect of gate length on DC performance of AlGaN/GaN HEMTs grown by MBE Solid-State Electronics. 45: 1979-1985. DOI: 10.1016/S0038-1101(01)00255-6  0.96
2001 Luo B, Johnson JW, Schoenfeld D, Pearton SJ, Ren F. Study of radiation induced resistance mechanisms in GaAs MESFET and TLM structures Solid-State Electronics. 45: 1149-1152. DOI: 10.1016/S0038-1101(01)00064-8  0.96
2001 Theodoropoulou N, Overberg ME, Chu SNG, Hebard AF, Abernathy CR, Wilson RG, Zavada JM, Lee KP, Pearton SJ. Magnetic properties of Mn and Fe-implanted p-GaN Physica Status Solidi (B) Basic Research. 228: 337-340. DOI: 10.1002/1521-3951(200111)228:1<337::AID-PSSB337>3.0.CO;2-J  0.96
2001 Overberg ME, Abernathy CR, Pearton SJ, Sharifi F, Hebard AF, Theodoropoulou N, Von Molnar S, Anane M, Xiong P. Epitaxial growth of dilute magnetic semiconductors: GaMnN and GaMnP Materials Research Society Symposium - Proceedings. 674.  0.96
2000 Cao XA, Dang GT, Zhang AP, Ren F, Abernathy CR, Pearton SJ, Van Hove JM, Klaassen JJ, Polley CJ, Wowchack AM, Chow PP, King DJ, Chu SNG. Common-base operation of GaN bipolar junction transistors Electrochemical and Solid-State Letters. 3: 333-334. DOI: 10.1149/1.1391140  0.96
2000 Cao XA, Dang GT, Zhang AP, Ren F, Van Hove JM, Klaassen JJ, Polley CJ, Wowchak AM, Chow PP, King DJ, Abernathy CR, Pearton SJ. High current, common-base GaN/AlGaN heterojunction bipolar transistors Electrochemical and Solid-State Letters. 3: 144-146. DOI: 10.1149/1.1390983  0.96
2000 Lee JW, Devre MW, Reelfs BH, Johnson D, Sasserath JN, Clayton F, Hays D, Pearton SJ. Advanced selective dry etching of GaAs/AlGaAs in high density inductively coupled plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 18: 1220-1224. DOI: 10.1116/1.582329  0.96
2000 Zhang AP, Dang GT, Ren F, Van Hove JM, Klaassen JJ, Chow PP, Cao XA, Pearton SJ. Effect of N2 discharge treatment on AlGaN/GaN high electron mobility transistor ohmic contacts using inductively coupled plasma Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 18: 1149-1152. DOI: 10.1116/1.582315  0.96
2000 Zavada JM, Thaik M, Hömmerich U, MacKenzie JD, Abernathy CR, Pearton SJ, Wilson RG. Luminescence characteristics of Er-doped GaN semiconductor thin films Journal of Alloys and Compounds. 300: 207-213. DOI: 10.1016/S0925-8388(99)00724-0  0.96
2000 Cao XA, Van Hove JM, Klaassen JJ, Polley CJ, Wowchack AM, Chow PP, King DJ, Ren F, Dang G, Zhang AP, Abernathy CR, Pearton SJ. High temperature characteristics of GaN-based heterojunction bipolar transistors and bipolar junction transistors Solid-State Electronics. 44: 649-654. DOI: 10.1016/S0038-1101(99)00291-9  0.96
2000 Hickman R, Van Hove JM, Chow PP, Klaassen JJ, Wowchak AM, Polley CJ, King DJ, Ren F, Abernathy CR, Pearton SJ, Jung KB, Cho H, La Roche JR. GaN PN junction issues and developments Solid-State Electronics. 44: 377-381. DOI: 10.1016/S0038-1101(99)00245-2  0.96
2000 Ren F, Han J, Hickman R, Van Hove JM, Chow PP, Klaassen JJ, Laroche JR, Jung KB, Cho H, Cao XA, Donovan SM, Kopf RF, Wilson RG, Baca AG, Shul RJ, ... ... Pearton SJ, et al. GaN/AlGaN HBT fabrication Solid-State Electronics. 44: 239-244. DOI: 10.1016/S0038-1101(99)00229-4  0.96
2000 Dang G, Luo B, Zhang AP, Cao XA, Ren F, Pearton SJ, Cho H, Hobson WS, Lopata J, Van Hove JM, Klaassen JJ, Polley CJ, Wowchack AM, Chow PP, King DJ. npn AlGaN/GaN heterojunction bipolar transistors and GaN bipolar junction transistors with regrown C-doped GaAs in the base regions Solid-State Electronics. 44: 2097-2100. DOI: 10.1016/S0038-1101(00)00112-X  0.96
2000 Cao XA, Van Hove JM, Klaassen JJ, Polley CJ, Wowchak AM, Chow PP, King DJ, Zhang AP, Dang G, Monier C, Pearton SJ, Ren F. Simulation of GaN/AlGaN heterojunction bipolar transistors: Part II - pnp structures Solid-State Electronics. 44: 1261-1265. DOI: 10.1016/S0038-1101(00)00026-5  0.96
1999 Cho H, Hahn YB, Hays DC, Abernathy CR, Donovan SM, MacKenzie JD, Pearton SJ, Han J, Shul RJ. III-nitride dry etching: Comparison of inductively coupled plasma chemistries Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 2202-2208. DOI: 10.1116/1.582037  0.96
1999 Hahn YB, Hays DC, Cho H, Jung KB, Abernathy CR, Donovan SM, Pearton SJ, Han J, Shul RJ. Comparison of ICl- and IBr-based plasma chemistries for inductively coupled plasma etching of GaN, InN and AlN Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 60: 95-100. DOI: 10.1016/S0921-5107(99)00036-7  0.96
1999 Cho H, Hong J, Maeda T, Donovan SM, Abernathy CR, Pearton SJ, Shul RJ. Novel plasma chemistries for highly selective dry etching of InxGaN1-x: BI3 and BBr3 Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 59: 340-344. DOI: 10.1016/S0921-5107(98)00379-1  0.96
1999 Jung KB, Hong J, Childress JR, Pearton SJ, Sharifi F, Jenson M, Hurst AT. Plasma etching of NiFe/Cu and NiMnSb/Al2O3 multilayers for sub-micron pattern definition Journal of Magnetism and Magnetic Materials. 198: 204-206. DOI: 10.1016/S0304-8853(98)01074-9  0.6
1998 Jung KB, Lambers ES, Childress JR, Pearton SJ, Jenson M, Hurst AT. Development of electron cyclotron resonance and inductively coupled plasma high density plasma etching for patterning of NiFe and NiFeCo Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 1697-1701. DOI: 10.1116/1.581287  0.6
1998 Cho H, Vartuli CB, Donovan SM, Abernathy CR, Pearton SJ, Shul RJ, Constantine C. Comparison of inductively coupled plasma Cl2 and Cl 4/H2 etching of III-nitrides Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 1631-1635. DOI: 10.1116/1.581132  0.96
1998 Pearton SJ, Abernathy CR, MacKenzie JD, Hömmerich U, Zavada JM, Wilson RG, Schwartz RN. Effect of atomic hydrogen on Er luminescence from AIN Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 1627-1630. DOI: 10.1116/1.581131  0.96
1997 Zheng JF, Stavola M, Abernathy CR, Pearton SJ. Growth induced alignment of the first neighbor shell of CAs in AlxGa1-xAs Materials Research Society Symposium - Proceedings. 442: 387-398. DOI: 10.1557/PROC-442-387  0.96
1997 Lee JW, Abernathy CR, Pearton SJ, Constantine C, Shu RJ, Hobson WS. Etching of Ga-based III-V semiconductors in inductively coupled Ar and CH4/H2-based plasma chemistries Plasma Sources Science and Technology. 6: 499-507. DOI: 10.1088/0963-0252/6/4/007  0.96
1997 Ren F, Lee JW, Abernathy CR, Pearton SJ, Shul RJ, Constantine C, Barratt C. Hydrogenation effects during high-density plasma processing of GaAs MESFETS Semiconductor Science and Technology. 12: 1154-1160. DOI: 10.1088/0268-1242/12/9/015  0.96
1997 Hong J, Lee JW, MacKenzie JD, Donovan SM, Abernathy CR, Pearton SJ, Zolper JC. Comparison of GaN, InN and AIN powders for susceptor-based rapid annealing of group III nitride materials Semiconductor Science and Technology. 12: 1310-1318. DOI: 10.1088/0268-1242/12/10/020  0.96
1997 Pearton SJ, Bendi S, Jones KS, Krishnamoorthy V, Wilson RG, Ren F, Karlicek RF, Stall RA. Reactivation of acceptors and trapping of hydrogen in GaN/InGaN double heterostructures Materials Research Society Symposium - Proceedings. 449: 993-998.  0.96
1997 MacKenzie JD, Abernathy CR, Pearton SJ, Hömmerich U, Wu X, Schwartz RN, Wilson RG, Zavada JM. Er doping of III-nitrides during growth by metalorganic molecular beam epitaxy Journal of Crystal Growth. 175: 84-88.  0.96
1997 Wu X, Hömmerich U, MacKenzie JD, Abernathy CR, Pearton SJ, Wilson RG, Schwartz RN, Zavada JM. Photoluminescence study of Er-doped AlN Journal of Luminescence. 72: 284-286.  0.96
1996 Pearton SJ, Abernathy CR. Carbon implantation in Alx Ga1-x As Materials Research Society Symposium - Proceedings. 396: 789-794. DOI: 10.1557/PROC-396-789  0.96
1996 Zolper JC, Wilson RG, Pearton SJ, Stall RA. Ca and O ion implantation doping of GaN Applied Physics Letters. 68: 1945-1947. DOI: 10.1063/1.115634  0.96
1996 Vartuli CB, Abernathy CR, Pearton SJ, Zolper JC, Howard AJ. C implantation and surface degradation of InGaP Journal of Electronic Materials. 25: 1640-1644.  0.96
1996 Santana CJ, Abernathy CR, Pearton SJ, Jones KS. Initial growth stages of AlxGa1-xP on epitaxial silicon Journal of Crystal Growth. 164: 248-255.  0.96
1996 MacKenzie JD, Abernathy CR, Pearton SJ, Hömmerich U, Wu X, Schwartz RN, Wilson RG, Zavada JM. Er doping of AIN during growth by metalorganic molecular beam epitaxy Applied Physics Letters. 69: 2083-2085.  0.96
1995 Lee JW, Hobson WS, Wu CS, Pearton SJ, Ren F, Abernathy CR. Wet Chemical Etching of A10.51n0.5P Journal of the Electrochemical Society. 142. DOI: 10.1149/1.2044249  0.96
1995 Ren F, Abernathy CR, Pearton SJ, Lothian JR. Use of Ti in ohmic metal contacts to p-GaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 293-296. DOI: 10.1116/1.588368  0.96
1995 Constantine C, Shul RJ, Sullivan CT, Snipes MB, McClellan GB, Hafich M, Fuller CT, Mileham JR, Pearton SJ. Etching of GaAs/AlGaAs rib waveguide structures using BCl3/Cl2/N2Ar electron cyclotron resonance Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 2025-2030. DOI: 10.1116/1.588128  0.96
1995 Yuan C, Salagaj T, Gurary A, Thompson AG, Kroll W, Stall RA, Hwang CY, Schurman M, Li Y, Mayo WE, Lu Y, Krishnankutty S, Shmagin IK, Kolbas RM, Pearton SJ. Investigation of n- and p-type doping of GaN during epitaxial growth in a mass production scale multiwafer-rotating-disk reactor Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 2075-2080. DOI: 10.1116/1.588080  0.96
1995 Pearton SJ, Abernathy CR, Lee JW, Ren F, Wu CS. Comparison of H+ and He+ implant isolation of GaAs-based heterojunction bipolar transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 13: 15-18. DOI: 10.1116/1.587975  0.96
1995 Pearton SJ, Abernathy CR, Ren F. High density, low temperature dry etching in GaAs and inp device technology Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 849-852. DOI: 10.1116/1.579840  0.96
1995 Wilson RG, Pearton SJ, Zavada JM, Abernathy CR. Outdiffusion of deuterium from GaN, AIN, and InN Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 719-723. DOI: 10.1116/1.579814  0.96
1995 Pearton SJ, Abernathy CR. Carbon implantation in AlxGa1-xAs Applied Physics Letters. 1793. DOI: 10.1063/1.116015  0.96
1995 Lee JW, Pearton SJ, Zolper JC, Stall RA. Hydrogen passivation of Ca acceptors in GaN Applied Physics Letters. 2102. DOI: 10.1063/1.115598  0.96
1995 Zolper JC, Pearton SJ, Abernathy CR, Vartuli CB. Nitrogen and fluorine ion implantation in InxGa1-xN Applied Physics Letters. 66: 3042. DOI: 10.1063/1.114271  0.96
1995 Lee JW, Pearton SJ, MacKenzie JD, Abernathy CR. Hydrogenation of InN and InGaN Electronics Letters. 31: 1512-1514. DOI: 10.1049/el:19951027  0.96
1995 Shul RJ, Sullivan CT, Snipes MB, McClellan GB, Hafich M, Fuller CT, Constantine C, Lee JW, Pearton SJ. Attenuation losses in electron cyclotron resonance plasma etched AlGaAs waveguides Solid State Electronics. 38: 2047. DOI: 10.1016/0038-1101(95)00034-Q  0.96
1995 Ren F, Buckley DN, Lee KM, Pearton SJ, Bartynski RA, Constantine C, Hobson WS, Hamm RA, Chao PC. Effect of ECR plasma on the luminescence efficiency of InGaAs and InP Solid State Electronics. 38: 2011-2015. DOI: 10.1016/0038-1101(95)00033-P  0.96
1995 Wilson RG, Vartuli CB, Abernathy CR, Pearton SJ, Zavada JM. Implantation and redistribution of dopants and isolation species in GaN and related compounds Solid State Electronics. 38: 1329-1333. DOI: 10.1016/0038-1101(94)00251-A  0.96
1995 Zolper JC, Pearton SJ, Abernathy CR, Vartuli CB. High resistivity InAlN by nitrogen or oxygen implantation Materials Research Society Symposium - Proceedings. 378: 485-490.  0.96
1995 MacKenzie JD, Abernathy CR, Pearton SJ, Chu SNG. Annealing behavior of AlxGa1-xAs:C grown by metalorganic molecular beam epitaxy Applied Physics Letters. 1397.  0.96
1995 Wilson RG, Pearton SJ, Abernathy CR, Zavada JM. Thermal stability of implanted dopants in GaN Applied Physics Letters. 2238.  0.96
1995 Abernathy CR, MacKenzie JD, Pearton SJ, Hobson WS. CCl4 doping of GaN grown by metalorganic molecular beam epitaxy Applied Physics Letters. 1969.  0.96
1995 Mackenzie JD, Abernathy CR, Pearton SJ, Wilson RG. AlN grown by metalorganic molecular beam epitaxy Materials Research Society Symposium - Proceedings. 363: 213-218.  0.96
1994 Abernathy CR, Ren F, Pearton SJ, Hobson WS, Wisk PW. Comparison of intrinsic and extrinsic carbon doping sources for GaAs and AlGaAs grown by metalorganic molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 12: 1186-1190. DOI: 10.1116/1.579293  0.96
1994 Pearton SJ, Ren F, Abernathy CR, Lothian JR. Fabrication of GaN nanostructures by a sidewall-etchback process Semiconductor Science and Technology. 9: 338-340. DOI: 10.1088/0268-1242/9/3/015  0.96
1994 Pearton SJ, Abernathy CR, Ren F, Lothian JR. Ar+-ion milling characteristics of III-V nitrides Journal of Applied Physics. 76: 1210-1215. DOI: 10.1063/1.357849  0.96
1994 Bylsma RB, Hobson WS, Lopata J, Zydzik GJ, Geva M, Asom MT, Pearton SJ, Thomas PM, Bridenbaugh PM, Washington MA, Roccasecca DD, Wilt DP. Carbon-doped impurity induced layer disorder 0.98 μm lasers Journal of Applied Physics. 76: 590-592. DOI: 10.1063/1.357048  0.96
1994 Ren F, Abernathy CR, Pearton SJ, Wisk PW. Thermal stability of Ti/Pt/Au nonalloyed ohmic contacts on InN Applied Physics Letters. 64: 1508-1510. DOI: 10.1063/1.111874  0.96
1994 Pearton SJ, Ren F, Abernathy CR. Low temperature electron cyclotron resonance plasma etching of GaAs, AlGaAs, and GaSb in Cl2/Ar Applied Physics Letters. 64: 1673-1675. DOI: 10.1063/1.111827  0.96
1994 Pearton SJ, Abernathy CR, Ren F. Low bias electron cyclotron resonance plasma etching of GaN, AlN, and InN Applied Physics Letters. 64: 2294-2296. DOI: 10.1063/1.111648  0.96
1994 Zavada JM, Wilson RG, Abernathy CR, Pearton SJ. Hydrogenation of GaN, AlN, and InN Applied Physics Letters. 64: 2724-2726. DOI: 10.1063/1.111455  0.96
1994 Pearton SJ, Abernathy CR, Ren F. Dry patterning of InGaN and InAlN Applied Physics Letters. 64: 3643-3645. DOI: 10.1063/1.111230  0.96
1994 Pearton SJ, Abernathy CR, Vartuli CB. ECR plasma etching of GaN, AlN and InN using iodine or bromine chemistries Electronics Letters. 30: 1985-1986. DOI: 10.1049/el:19941350  0.96
1994 Ren F, Abernathy CR, Pearton SJ, Wisk PW. InP-based single heterojunction bipolar transistors with improved breakdown characteristics Electronics Letters. 30: 1184-1185. DOI: 10.1049/el:19940757  0.96
1994 Pearton SJ, Abernathy CR, Ren F. Electrical passivation in hydrogen plasma exposed GaN Electronics Letters. 30: 527-528. DOI: 10.1049/el:19940327  0.96
1994 Pearton SJ, Ren F, Abernathy CR, Constantine C. Optical emission end point detection for via hole etching in InP and GaAs power device structures Materials Science and Engineering B. 23: 36-40. DOI: 10.1016/0921-5107(94)90275-5  0.96
1994 Pearton SJ, Chakrabarti UK, Ren F, Abernathy CR, Katz A, Hobson WS, Constantine C. New dry-etch chemistries for III-V semiconductors Materials Science and Engineering B. 25: 179-185. DOI: 10.1016/0921-5107(94)90222-4  0.96
1994 Pearton SJ, Ren F, Abernathy CR. Temperature-dependent dry etching characteristics of III-V semiconductors in HBr- and HI-based discharges Plasma Chemistry and Plasma Processing. 14: 131-150. DOI: 10.1007/BF01465743  0.96
1994 Pearton SJ, Hobson WS, Ren F, Abernathy CR, Constantine C. Dry etched mesas for buried heterostructure InGaAsP/InP lasers using electron cyclotron resonance Cl2/CH4/H2/Ar discharges Journal of Materials Science Materials in Electronics. 5: 185-190. DOI: 10.1007/BF01198952  0.96
1994 Pearton SJ, Abernathy CR, Ren F. Selective area processing of InGaAsP Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 194-197.  0.96
1994 Ren F, Abernathy CR, Pearton SJ, Wisk PW. Thermal stability of Ti/Pt/Au non-alloyed ohmic contacts on InN Materials Research Society Symposium - Proceedings. 337: 421-427.  0.96
1994 Pearton SJ, Abernathy CR, Ren F, Lothian JR. Ion milling and reactive ion etching of III-V nitrides Materials Research Society Symposium - Proceedings. 339: 179-184.  0.96
1994 Abernathy CR, Ren F, Pearton SJ. Implant isolation and dry etching of InN Conference Proceedings - International Conference On Indium Phosphide and Related Materials. 387-390.  0.96
1994 Pearton SJ, Ren F, Abernathy CR, Constantine C. Optical emission end-point detection for via hole etching in InP and GaAs power device structures Materials Research Society Symposium Proceedings. 324: 341-346.  0.96
1994 Pearton SJ, Abernathy CR, Wisk PW, Ren F. Ion beam processing of InGaAsP Materials Research Society Symposium Proceedings. 316: 319-324.  0.96
1994 Cheng YM, Stavola M, Abernathy CR, Pearton SJ. Oriented carbon pair defects stabilized by hydrogen in as-grown GaAs epitaxial layers Materials Research Society Symposium Proceedings. 325: 273-278.  0.96
1993 Katz A, Feingold A, El-Roy A, Moriya N, Pearton SJ, Rusby A, Kovalchick J, Abernathy CR, Geva M, Lane E. Rapid thermal low-pressure metalorganic chemical vapour deposition of local diffused W(Zn) contacts Semiconductor Science and Technology. 8: 1445-1450. DOI: 10.1088/0268-1242/8/7/040  0.96
1993 Katz A, Feingold A, Nakahara S, Pearton SJ, Lane E, Jones K. Microstructural study of very low resistivity TiNx films formed by rapid thermal low-pressure metalorganic chemical vapour deposition onto InP Semiconductor Science and Technology. 8: 450-458. DOI: 10.1088/0268-1242/8/3/026  0.96
1993 Pearton SJ, Abernathy CR, Ren F, Lothian JR, Wisk PW, Katz A, Constantine C. Dry etching of thin-film InN, AlN and GaN Semiconductor Science and Technology. 8: 310-312. DOI: 10.1088/0268-1242/8/2/026  0.96
1993 Pearton SJ, Ren F, Abernathy CR. Enhanced etch rates of tri-level resist stacks in microwave discharges Semiconductor Science and Technology. 8: 1905-1907. DOI: 10.1088/0268-1242/8/10/020  0.96
1993 Pearton SJ, Ren F, Abernathy CR. Low bias dry etching of tungsten and dielectric layers on GaAs Semiconductor Science and Technology. 8: 1897-1903. DOI: 10.1088/0268-1242/8/10/019  0.96
1993 Pearton SJ, Abernathy CR, Wisk PW, Ren F. Ion implantation and dry etching characteristics of InGaAsP (λ=1.3 μm) Journal of Applied Physics. 74: 1610-1615. DOI: 10.1063/1.354809  0.96
1993 Borenstein JT, Corbett JW, Pearton SJ. Kinetic model for hydrogen reactions in boron-doped silicon Journal of Applied Physics. 73: 2751-2754. DOI: 10.1063/1.353049  0.96
1993 Katz A, Feingold A, Pearton SJ, Moriya N, Baiocchi CJ, Geva M. Low-temperature rapid thermal low pressure metalorganic chemical vapor deposition of Zn-doped InP layers using tertiarybutylphosphine Applied Physics Letters. 63: 2546-2548. DOI: 10.1063/1.110428  0.96
1993 Katz A, Feingold A, Moriya N, Pearton SJ, Geva M, Baiocchi FA, Luther LC, Lane E. Rapid thermal low pressure metalorganic chemical vapor deposition of In0.53Ga0.47As films using tertiarybutylarsine Applied Physics Letters. 63: 2679-2681. DOI: 10.1063/1.110418  0.96
1993 Katz A, Feingold A, Moriya N, Nakahara S, Abernathy CR, Pearton SJ, El-Roy A, Geva M, Baiocchi FA, Luther LC, Lane E. Growth of InP epitaxial layers by rapid thermal low pressure metalorganic chemical vapor deposition, using tertiarybutylphosphine Applied Physics Letters. 63: 2958-2960. DOI: 10.1063/1.110285  0.96
1993 Abernathy CR, Wisk PW, Pearton SJ, Ren F. Mg doping of InP and InGaAs grown by metalorganic molecular beam epitaxy using bis-cyclopentadienyl magnesium Applied Physics Letters. 62: 258-260. DOI: 10.1063/1.108982  0.96
1993 Chakrabarti UK, Pearton SJ, Hobson WS, Abernathy CR. Characteristics of vinyl iodide microwave plasma etching of GaAs/AlGaAs and InP/InGaAs heterostructures Plasma Chemistry and Plasma Processing. 13: 333-350. DOI: 10.1007/BF01466048  0.96
1992 Katz A, Feingold A, Pearton SJ, Chakrabart UK, Lee KM. Fast thermal kinetic growth of silicon dioxide films on InP by rapid thermal low-pressure chemical vapour deposition Semiconductor Science and Technology. 7: 583-594. DOI: 10.1088/0268-1242/7/4/025  0.96
1992 Katz A, Feingold A, Pearton SJ. Formation of TiNx ohmic contacts to InGaAs/InP by means of a load-locked integrated process Semiconductor Science and Technology. 7: 436-439. DOI: 10.1088/0268-1242/7/3/029  0.96
1992 Katz A, Feingold A, El-Roy A, Pearton SJ, Lane E, Nakahara S, Geva M. Rapid thermal low-pressure chemical vapour deposition of tungsten films onto InP using WF6 and H2 Semiconductor Science and Technology. 7: 1325-1331. DOI: 10.1088/0268-1242/7/11/006  0.96
1992 Katz A, Feingold A, Nakahara S, Pearton SJ, Lane E, Geva M, Stevie FA, Jones K. The influence of ammonia on rapid-thermal low-pressure metalorganic chemical vapor deposited TiNx films from tetrakis (dimethylamido) titanium precursor onto InP Journal of Applied Physics. 71: 993-1000. DOI: 10.1063/1.351271  0.96
1992 Constantine C, Barratt C, Pearton SJ, Ren F, Lothian JR. Smooth, low-bias plasma etching of InP in microwave Cl2/CH 4/H2 mixtures Applied Physics Letters. 61: 2899-2901. DOI: 10.1063/1.108042  0.96
1992 Katz A, Feingold A, Nakahara S, Pearton SJ, Lane E. Low resistance tungsten films on GaAs deposited by means of rapid thermal low pressure chemical vapor deposition Applied Physics Letters. 61: 525-527. DOI: 10.1063/1.107876  0.96
1992 Pearton SJ, Hobson WS, Abernathy CR. Dissociation energies of acceptor-hydrogen complexes in InP Applied Physics Letters. 61: 1588-1590. DOI: 10.1063/1.107505  0.96
1992 Ren F, Abernathy CR, Pearton SJ. Novel carbon-doped p-channel GaAs MESFET grown by MOMBE Materials Science and Engineering B. 13: 305-307. DOI: 10.1016/0921-5107(92)90133-T  0.96
1992 Pearton SJ, Katz A, Feingold A, Ren F, Fullowan TR, Lothian JR, Abernathy CR. Self-aligned, metal-masked dry etch processing of III-V electronic and photonic devices Materials Science and Engineering B. 15: 82-91. DOI: 10.1016/0921-5107(92)90036-9  0.96
1992 Abernathy CR, Ren F, Pearton SJ, Song J. Dopant incorporation in GaAs and AlGaAs grown by MOMBE for high speed devices Journal of Electronic Materials. 21: 323-327. DOI: 10.1007/BF02660461  0.96
1991 Pearton SJ, Chakrabarti UK, Perley AP, Constantine C, Johnson D. Degradation-free electron cyclotron resonance plasma etching of InP Semiconductor Science and Technology. 6: 929-933. DOI: 10.1088/0268-1242/6/9/016  0.96
1991 Pearton SJ, Katz A, Feingold A. Hybrid electron cyclotron resonance-RF plasma etching of TiNx thin films grown by low pressure rapid thermal metalorganic chemical vapour deposition Semiconductor Science and Technology. 6: 830-832. DOI: 10.1088/0268-1242/6/8/022  0.96
1991 Pearton SJ, Abernathy CR, Ren F, Fullowan TR. Dry etching and implant isolation characteristics of AlxGa1-xAs grown by metal organic molecular beam epitaxy Semiconductor Science and Technology. 6: 1042-1047. DOI: 10.1088/0268-1242/6/11/002  0.96
1991 Ren F, Abernathy CR, Pearton SJ. Novel carbon-doped p-channel GaAs metal-semiconductor field-effect transistor grown by metalorganic molecular beam epitaxy Journal of Applied Physics. 70: 2885-2886. DOI: 10.1063/1.349357  0.96
1991 Katz A, Feingold A, Pearton SJ, Nakahara S, Ellington M, Chakrabarti UK, Geva M, Lane E. Properties of titanium nitride thin films deposited by rapid-thermal-low- pressure-metalorganic-chemical-vapor-deposition technique using tetrakis (dimethylamido) titanium precursor Journal of Applied Physics. 70: 3666-3677. DOI: 10.1063/1.349214  0.96
1991 Katz A, Feingold A, Nakahara S, Pearton SJ, Geva M, Lane E, Jones KS. Rapid thermal processing of WSix contacts to inp in low-pressure n2:h2 and tertiarybutylphosphine ambients Journal of Applied Physics. 69: 7664-7673. DOI: 10.1063/1.347539  0.96
1991 Hobson WS, Ren F, Schnoes ML, Sputz SK, Harris TD, Pearton SJ, Abernathy CR, Jones KS. GaAs/AlGaAs quantum well and modulation-doped heterostructures grown by organometallic vapor phase epitaxy using trimethylamine alane Applied Physics Letters. 59: 1975-1977. DOI: 10.1063/1.106154  0.96
1991 Pearton SJ, Abernathy CR, Lopata J. Thermal stability of dopant-hydrogen pairs in GaAs Applied Physics Letters. 59: 3571-3573. DOI: 10.1063/1.105635  0.96
1991 Katz A, Feingold A, Pearton SJ, Chakrabarti UK. Rapid thermal low-pressure chemical vapor deposition of SiOx films onto InP Applied Physics Letters. 59: 579-581. DOI: 10.1063/1.105392  0.96
1991 Hobson WS, Harris TD, Abernathy CR, Pearton SJ. High quality AlxGa1-xAs grown by organometallic vapor phase epitaxy using trimethylamine alane as the aluminum precursor Applied Physics Letters. 58: 77-79. DOI: 10.1063/1.104450  0.96
1991 Pearton SJ, Corbett JW, Borenstein JT. Hydrogen diffusion in crystalline semiconductors Physica B: Physics of Condensed Matter. 170: 85-97. DOI: 10.1016/0921-4526(91)90109-R  0.96
1991 Pearton SJ, Chakrabarti UK, Hobson WS, Constantine C, Johnson D. Low damage dry etching of III-V compound semiconductors using electron cyclotron resonance discharges Nuclear Inst. and Methods in Physics Research, B. 59: 1015-1018. DOI: 10.1016/0168-583X(91)95754-2  0.96
1991 Abernathy CR, Pearton SJ, Bohling DA, Muhr GT. The role of aluminum and hydrogen in impurity contamination of AlGaAs grown by MOMBE Journal of Crystal Growth. 111: 574-577. DOI: 10.1016/0022-0248(91)91042-9  0.96
1991 Bohling DA, Muhr GT, Abernathy CR, Jordan AS, Pearton SJ, Hobson WS. The search for all-hydride MOMBE: examination of trimethylamine alane, trimethylamine gallane, and arsine Journal of Crystal Growth. 107: 1068-1069. DOI: 10.1016/0022-0248(91)90613-A  0.96
1991 Abernathy CR, Pearton SJ, Baiocchi FA, Ambrose T, Jordan AS, Bohling DA, Muhr GT. Effect of source chemistry and growth parameters on AlGaAs grown by metalorganic molecular beam epitaxy Journal of Crystal Growth. 110: 457-471. DOI: 10.1016/0022-0248(91)90283-B  0.96
1991 Abernathy CR, Pearton SJ, Ha NT. Sn doping of GaAs and AlGaAs grown by metalorganic molecular beam epitaxy Journal of Crystal Growth. 108: 827-830. DOI: 10.1016/0022-0248(91)90264-6  0.96
1991 Abernathy CR, Jordan AS, Pearton SJ, Ren F, Baiocchi F, Bohling DA, Muhr GT. The feasibility of using trimethylamine alane as an Al precursor for MOMBE Journal of Crystal Growth. 109: 31-36. DOI: 10.1016/0022-0248(91)90154-W  0.96
1991 Abernathy CR, Pearton SJ, Ren F, Song J. Sn doping of GaAs and AlGaAs by MOMBE using tetraethyltin Journal of Crystal Growth. 113: 412-416. DOI: 10.1016/0022-0248(91)90075-G  0.96
1990 Pearton SJ, Chakrabarti UK, Perley AP, Jones KS. Ion milling damage in InP and GaAs Journal of Applied Physics. 68: 2760-2768. DOI: 10.1063/1.346453  0.96
1990 Abernathy CR, Jordan AS, Pearton SJ, Hobson WS, Bohling DA, Muhr GT. Growth of high quality AlGaAs by metalorganic molecular beam epitaxy using trimethylamine alane Applied Physics Letters. 56: 2654-2656. DOI: 10.1063/1.102866  0.96
1990 Tavendale AJ, Pearton SJ, Williams AA. Evidence for the existence of a negatively charged hydrogen species in plasma-treated n-type Si Applied Physics Letters. 56: 949-951. DOI: 10.1063/1.102633  0.96
1990 Katz A, Abernathy CR, Pearton SJ. Pt/Ti ohmic contacts to ultrahigh carbon-doped p-GaAs formed by rapid thermal processing Applied Physics Letters. 56: 1028-1030. DOI: 10.1063/1.102605  0.96
1990 Aitchison BJ, Haegel NM, Abernathy CR, Pearton SJ. Enhanced hot-electron photoluminescence from heavily carbon-doped GaAs Applied Physics Letters. 56: 1154-1156. DOI: 10.1063/1.102548  0.96
1990 Hobson WS, Pearton SJ, Jordan AS. Redistribution of Zn in GaAs-AlGaAs heterojunction bipolar transistor structures Applied Physics Letters. 56: 1251-1253. DOI: 10.1063/1.102528  0.96
1990 Tavendale AJ, Pearton SJ, Williams AA, Alexiev D. Injection and drift of a positively charged hydrogen species in p-type GaAs Applied Physics Letters. 56: 1457-1459. DOI: 10.1063/1.102497  0.96
1990 Pearton SJ, Chakrabarti UK, Kinsella AP, Johnson D, Constantine C. Electron cyclotron resonance plasma etching of InP in CH4/H 2/Ar Applied Physics Letters. 56: 1424-1426. DOI: 10.1063/1.102487  0.96
1990 Abernathy CR, Pearton SJ, Ren F, Hobson WS, Fullowan TR, Katz A, Jordan AS, Kovalchick J. Carbon doping of III-V compounds grown by MOMBE Journal of Crystal Growth. 105: 375-382. DOI: 10.1016/0022-0248(90)90389-3  0.96
1989 Gray ML, Parsey JM, Ahrens RE, Pearton SJ, Short KT, Sargent L, Blakemore JS. Characterization of n-type regions in GaAs formed by silicon fluoride molecular ion implantations Journal of Applied Physics. 66: 4176-4180. DOI: 10.1063/1.344002  0.96
1989 Pearton SJ, Hobson WS, Jones KS. Etch rates and surface chemistry of GaAs and AlGaAs reactively ion etched in C2H6/H2 Journal of Applied Physics. 66: 5009-5017. DOI: 10.1063/1.343773  0.96
1989 Pearton SJ, Chakrabarti UK, Abernathy CR, Hobson WS. Carbon implantation in InP Applied Physics Letters. 55: 2014-2016. DOI: 10.1063/1.102276  0.96
1989 Pearton SJ, Abernathy CR. Carbon in GaAs: Implantation and isolation characteristics Applied Physics Letters. 55: 678-680. DOI: 10.1063/1.101820  0.96
1989 Hobson WS, Pearton SJ, Swaminathan V, Jordan AS, Kanber H, Kao YJ, Haegel NM. Role of vanadium in organometallic vapor phase epitaxy grown GaAs Applied Physics Letters. 54: 1772-1774. DOI: 10.1063/1.101287  0.96
1989 McCluskey FP, Pfeiffer L, West KW, Lopata J, Schnoes ML, Harris TD, Pearton SJ, Dautremont-Smith WC. Depth dependence of silicon donor passivation and reactivation in hydrogenated GaAs Applied Physics Letters. 54: 1769-1771. DOI: 10.1063/1.101286  0.96
1988 Gray ML, Parsey JM, Pearton SJ, Short KT, Ahrens RE, Sargent L, Blakemore JS. The role of crystal-growth properties on silicon implant activation processes for GaAs Journal of Applied Physics. 64: 1464-1467. DOI: 10.1063/1.341818  0.96
1988 Swaminathan V, Caruso R, Pearton SJ. Photoluminescence from annealed semi-insulating GaAs crystals: The 1.360-eV band Journal of Applied Physics. 63: 2164-2167. DOI: 10.1063/1.341078  0.96
1987 Abernathy CR, Kinsella AP, Jordan AS, Caruso R, Pearton SJ, Temkin H, Wade H. Growth and characterization of low defect GaAs by vertical gradient freeze Journal of Crystal Growth. 85: 106-115. DOI: 10.1016/0022-0248(87)90210-7  0.96
1986 Tavendale AJ, Williams AA, Pearton SJ. Hydrogen injection and neutralization of boron acceptors in silicon boiled in water Applied Physics Letters. 48: 590-592. DOI: 10.1063/1.96476  0.96
1983 Pearton SJ, Kahn JM. Dislocations in germanium: Effects of plasma hydrogenation Physica Status Solidi (a). 78: K65-K69. DOI: 10.1002/pssa.2210780156  0.96
Show low-probability matches.