Stephen J. Pearton - Publications

Affiliations: 
University of Florida, Gainesville, Gainesville, FL, United States 
Area:
Materials Science Engineering, Polymer Chemistry
Website:
https://mse.ufl.edu/people/mse-faculty/stephen-pearton/

15 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2018 Lee G, Pearton SJ, Ren F, Kim J. Two-dimensionally layered p-black phosphorus/n-MoS/p-black phosphorus Heterojunctions. Acs Applied Materials & Interfaces. PMID 29485269 DOI: 10.1021/acsami.7b19334  0.64
2017 Yang G, Jang S, Ren F, Pearton SJ, Kim J. Influence of high-energy proton irradiation on β-Ga2O3 nanobelt field-effect transistors. Acs Applied Materials & Interfaces. PMID 29083157 DOI: 10.1021/acsami.7b13881  0.64
2015 Morrow WK, Pearton SJ, Ren F. Review of Graphene as a Solid State Diffusion Barrier. Small (Weinheim An Der Bergstrasse, Germany). PMID 26523843 DOI: 10.1002/smll.201501120  0.56
2014 Park JC, Kim KW, Gila BP, Lambers ES, Norton DP, Pearton SJ, Ren F, Kim JK, Cho H. Measurement of band offsets in Y2O3/InGaZnO4 heterojunctions. Journal of Nanoscience and Nanotechnology. 14: 8445-8. PMID 25958543  0.64
2014 Yang G, Jung Y, Cuervo CV, Ren F, Pearton SJ, Kim J. GaN-based light-emitting diodes on graphene-coated flexible substrates. Optics Express. 22: A812-7. PMID 24922388  0.64
2014 Kim JK, Kim KW, Douglas EA, Gila BP, Craciun V, Lambers ES, Norton DP, Ren F, Pearton SJ, Cho H. Band offsets in YSZ/InGaZnO4 heterostructure system. Journal of Nanoscience and Nanotechnology. 14: 3925-7. PMID 24734665  0.64
2013 Kim BJ, Yang G, Kim HY, Baik KH, Mastro MA, Hite JK, Eddy CR, Ren F, Pearton SJ, Kim J. GaN-based ultraviolet light-emitting diodes with AuCl₃-doped graphene electrodes. Optics Express. 21: 29025-30. PMID 24514418  0.64
2013 Park H, Baik KH, Kim J, Ren F, Pearton SJ. A facile method for highly uniform GaN-based nanorod light-emitting diodes with InGaN/GaN multi-quantum-wells. Optics Express. 21: 12908-13. PMID 23736510  0.64
2013 Yang G, Lee C, Kim J, Ren F, Pearton SJ. Flexible graphene-based chemical sensors on paper substrates. Physical Chemistry Chemical Physics : Pccp. 15: 1798-801. PMID 23262787 DOI: 10.1039/c2cp43717a  0.64
2010 Chu BH, Kang BS, Hung SC, Chen KH, Ren F, Sciullo A, Gila BP, Pearton SJ. Aluminum gallium nitride (GaN)/GaN high electron mobility transistor-based sensors for glucose detection in exhaled breath condensate. Journal of Diabetes Science and Technology. 4: 171-9. PMID 20167182  0.64
2009 Anderson T, Ren F, Pearton S, Kang BS, Wang HT, Chang CY, Lin J. Advances in Hydrogen, Carbon Dioxide, and Hydrocarbon Gas Sensor Technology Using GaN and ZnO-Based Devices. Sensors (Basel, Switzerland). 9: 4669-94. PMID 22408548 DOI: 10.3390/s90604669  0.56
2007 Pearton SJ, Lele T, Tseng Y, Ren F. Penetrating living cells using semiconductor nanowires. Trends in Biotechnology. 25: 481-2. PMID 17935806 DOI: 10.1016/j.tibtech.2007.07.011  0.64
2007 Pearton SJ, Norton DP, Ren F. The promise and perils of wide-bandgap semiconductor nanowires for sensing, electronic, and photonic applications. Small (Weinheim An Der Bergstrasse, Germany). 3: 1144-50. PMID 17520589 DOI: 10.1002/smll.200700042  0.64
2005 Sippel-Oakley J, Wang HT, Kang BS, Wu Z, Ren F, Rinzler AG, Pearton SJ. Carbon nanotube films for room temperature hydrogen sensing. Nanotechnology. 16: 2218-21. PMID 20817998 DOI: 10.1088/0957-4484/16/10/040  0.56
2001 Theodoropoulou N, Lee KP, Overberg ME, Chu SN, Hebard AF, Abernathy CR, Pearton SJ, Wilson RG. Nanoscale magnetic regions formed in GaN implanted with Mn. Journal of Nanoscience and Nanotechnology. 1: 101-6. PMID 12914038 DOI: 10.1166/jnn.2001.004  0.56
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