Stacey F. Bent - Publications

Affiliations: 
1998- Stanford University, Palo Alto, CA 
Area:
surface and interfacial chemistry and materials synthesis
Website:
https://cheme.stanford.edu/people/stacey-bent

222 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Closser RG, Lillethorup M, Bergsman DS, Bent SF. Growth of a Surface-Tethered, All-Carbon Backboned Fluoropolymer by Photoactivated Molecular Layer Deposition. Acs Applied Materials & Interfaces. PMID 31180195 DOI: 10.1021/acsami.9b03462  0.68
2019 Andersen SZ, Čolić V, Yang S, Schwalbe JA, Nielander AC, McEnaney JM, Enemark-Rasmussen K, Baker JG, Singh AR, Rohr BA, Statt MJ, Blair SJ, Mezzavilla S, Kibsgaard J, Vesborg PCK, ... ... Bent SF, et al. A rigorous electrochemical ammonia synthesis protocol with quantitative isotope measurements. Nature. PMID 31117118 DOI: 10.1038/s41586-019-1260-x  0.44
2018 Manzoor S, Häusele J, Bush KA, Palmstrom AF, Carpenter J, Yu ZJ, Bent SF, Mcgehee MD, Holman ZC. Optical modeling of wide-bandgap perovskite and perovskite/silicon tandem solar cells using complex refractive indices for arbitrary-bandgap perovskite absorbers. Optics Express. 26: 27441-27460. PMID 30469811 DOI: 10.1364/OE.26.027441  0.36
2018 Duyar M, Tsai C, Snider JL, Singh JA, Gallo A, Yoo JS, Medford AJ, Abild-Pedersen F, Studt F, Kibsgaard J, Bent S, Nørskov JK, Jaramillo T. Discovery of a highly active molybdenum phosphide catalyst for methanol synthesis from CO and CO2. Angewandte Chemie (International Ed. in English). PMID 30134041 DOI: 10.1002/anie.201806583  0.72
2018 Closser RG, Bergsman DS, Bent SF. Molecular Layer Deposition of a Highly Stable Silicon Oxycarbide Thin Film Using an Organic Chlorosilane and Water. Acs Applied Materials & Interfaces. PMID 29965720 DOI: 10.1021/acsami.8b06057  0.68
2018 Singh JA, Thissen NFW, Kim WH, Johnson H, Kessels WMM, Bol AA, Bent SF, Mackus AJM. Area-Selective Atomic Layer Deposition of Metal Oxides on Noble Metals through Catalytic Oxygen Activation. Chemistry of Materials : a Publication of the American Chemical Society. 30: 663-670. PMID 29503508 DOI: 10.1021/acs.chemmater.7b03818  0.4
2017 Sandoval TE, Bent SF. Adsorption of Homotrifunctional 1,2,3-Benzenetriol on a Ge(100)-2 × 1 Surface. Langmuir : the Acs Journal of Surfaces and Colloids. PMID 28574269 DOI: 10.1021/acs.langmuir.7b00872  0.84
2017 Shong B, Yoo JS, Sandoval TE, Bent SF. Formation of Germa-ketenimine on the Ge(100) Surface by Adsorption of tert-Butyl Isocyanide. Journal of the American Chemical Society. PMID 28560877 DOI: 10.1021/jacs.7b04755  1
2017 Mackus AJ, MacIsaac C, Kim WH, Bent SF. Incomplete elimination of precursor ligands during atomic layer deposition of zinc-oxide, tin-oxide, and zinc-tin-oxide. The Journal of Chemical Physics. 146: 052802. PMID 28178803 DOI: 10.1063/1.4961459  0.4
2016 Narkeviciute I, Chakthranont P, Mackus AJ, Hahn C, Pinaud BA, Bent SF, Jaramillo TF. Tandem Core-Shell Si-Ta3N5 Photoanodes for Photoelectrochemical Water Splitting. Nano Letters. 16: 7565-7572. PMID 27960454 DOI: 10.1021/acs.nanolett.6b03408  0.44
2016 Minaye Hashemi FS, Birchansky BR, Bent SF. Selective Deposition of Dielectrics: Limits and Advantages of Alkanethiol Blocking Agents on Metal-Dielectric Patterns. Acs Applied Materials & Interfaces. 8: 33264-33272. PMID 27934166 DOI: 10.1021/acsami.6b09960  0.72
2016 Yang N, Medford AJ, Liu X, Studt F, Bligaard T, Bent SF, Nørskov JK. Intrinsic Selectivity and Structure Sensitivity of Rhodium Catalysts for C2+ Oxygenate Production. Journal of the American Chemical Society. PMID 26958997 DOI: 10.1021/jacs.5b12087  1
2016 Kim WH, Minaye Hashemi FS, Mackus AJ, Singh J, Kim Y, Bobb-Semple D, Fan Y, Kaufman-Osborn T, Godet L, Bent SF. A Process for Topographically-Selective Deposition on 3D Nanostructures by Ion Implantation. Acs Nano. PMID 26950397 DOI: 10.1021/acsnano.6b00094  1
2015 Trejo O, Roelofs KE, Xu S, Logar M, Sarangi R, Nordlund D, Dadlani AL, Kravec R, Dasgupta NP, Bent SF, Prinz FB. Quantifying geometric strain at the PbS QD-TiO2 anode interface and its effect on electronic structures. Nano Letters. PMID 26554814 DOI: 10.1021/acs.nanolett.5b02373  1
2015 Shong B, Sandoval TE, Crow AM, Bent SF. Unidirectional Adsorption of Bifunctional 1,4-Phenylene Diisocyanide on the Ge(100)-2 × 1 Surface. The Journal of Physical Chemistry Letters. 6: 1037-41. PMID 26262866 DOI: 10.1021/acs.jpclett.5b00098  1
2015 Roelofs KE, Herron SM, Bent SF. Increased Quantum Dot Loading by pH Control Reduces Interfacial Recombination in Quantum-Dot-Sensitized Solar Cells. Acs Nano. 9: 8321-34. PMID 26244426 DOI: 10.1021/acsnano.5b02853  1
2015 Minaye Hashemi FS, Prasittichai C, Bent SF. Self-Correcting Process for High Quality Patterning by Atomic Layer Deposition. Acs Nano. 9: 8710-7. PMID 26181140 DOI: 10.1021/acsnano.5b03125  1
2015 Palmstrom AF, Santra PK, Bent SF. Atomic layer deposition in nanostructured photovoltaics: tuning optical, electronic and surface properties. Nanoscale. 7: 12266-83. PMID 26147328 DOI: 10.1039/c5nr02080h  1
2015 Pickrahn KL, Gorlin Y, Seitz LC, Garg A, Nordlund D, Jaramillo TF, Bent SF. Applications of ALD MnO to electrochemical water splitting. Physical Chemistry Chemical Physics : Pccp. 17: 14003-11. PMID 25946998 DOI: 10.1039/c5cp00843c  1
2015 Yee YS, Magyari-Köpe B, Nishi Y, Bent SF, Clemens BM. Deep recombination centers in C u2ZnSnS e4 revealed by screened-exchange hybrid density functional theory Physical Review B - Condensed Matter and Materials Physics. 92. DOI: 10.1103/PhysRevB.92.195201  1
2015 Hultqvist A, Li JV, Kuciauskas D, Dippo P, Contreras MA, Levi DH, Bent SF. Reducing interface recombination for Cu(In,Ga)Se2 by atomic layer deposited buffer layers Applied Physics Letters. 107. DOI: 10.1063/1.4927096  1
2015 Pickrahn KL, Garg A, Bent SF. ALD of ultrathin ternary oxide electrocatalysts for water splitting Acs Catalysis. 5: 1609-1616. DOI: 10.1021/cs501532b  1
2015 Shong B, Sandoval TE, Crow AM, Bent SF. Unidirectional adsorption of bifunctional 1,4-phenylene diisocyanide on the Ge(100)-2 × 1 surface Journal of Physical Chemistry Letters. 6: 1037-1041. DOI: 10.1021/acs.jpclett.5b00098  1
2015 Santra PK, Palmstrom AF, Tanskanen JT, Yang N, Bent SF. Improving performance in colloidal quantum dot solar cells by tuning band alignment through surface dipole moments Journal of Physical Chemistry C. 119: 2996-3005. DOI: 10.1021/acs.jpcc.5b00341  1
2015 Lee HBR, Bent SF. Formation of Continuous Pt Films on the Graphite Surface by Atomic Layer Deposition with Reactive O3 Chemistry of Materials. 27: 6802-6809. DOI: 10.1021/acs.chemmater.5b03076  1
2015 Shong B, Hellstern TR, Bent SF. Adsorption of heterobifunctional 4-nitrophenol on the Ge(100)-2×1 surface Surface Science. DOI: 10.1016/j.susc.2015.04.007  1
2015 Nardi KL, Yang N, Dickens CF, Strickler AL, Bent SF. Creating Highly Active Atomic Layer Deposited NiO Electrocatalysts for the Oxygen Evolution Reaction Advanced Energy Materials. DOI: 10.1002/aenm.201500412  1
2014 Roelofs KE, Brennan TP, Bent SF. Interface Engineering in Inorganic-Absorber Nanostructured Solar Cells. The Journal of Physical Chemistry Letters. 5: 348-60. PMID 26270710 DOI: 10.1021/jz4023656  0.36
2014 Prasittichai C, Pickrahn KL, Hashemi FS, Bergsman DS, Bent SF. Improving area-selective molecular layer deposition by selective SAM removal. Acs Applied Materials & Interfaces. 6: 17831-6. PMID 25290370 DOI: 10.1021/am504441e  1
2014 Viswanathan V, Pickrahn KL, Luntz AC, Bent SF, Nørskov JK. Nanoscale limitations in metal oxide electrocatalysts for oxygen evolution. Nano Letters. 14: 5853-7. PMID 25216362 DOI: 10.1021/nl502775u  1
2014 Kim K, Lee HB, Johnson RW, Tanskanen JT, Liu N, Kim MG, Pang C, Ahn C, Bent SF, Bao Z. Selective metal deposition at graphene line defects by atomic layer deposition. Nature Communications. 5: 4781. PMID 25179368 DOI: 10.1038/ncomms5781  0.44
2014 Geyer SM, Methaapanon R, Johnson RW, Kim WH, Van Campen DG, Metha A, Bent SF. An atomic layer deposition chamber for in situ x-ray diffraction and scattering analysis. The Review of Scientific Instruments. 85: 055116. PMID 24880424 DOI: 10.1063/1.4876484  1
2014 Shong B, Wong KT, Bent SF. Strong carbon-surface dative bond formation by tert-butyl isocyanide on the Ge(100)-2 × 1 surface. Journal of the American Chemical Society. 136: 5848-51. PMID 24725248 DOI: 10.1021/ja500742a  1
2014 Shong B, Bent SF. Ab initio simulation of 1D pattern formation of adsorbates on the Ge(100)-2 x 1 surface Materials Research Society Symposium Proceedings. 1551: 81-86. DOI: 10.1557/opl.2013.891  1
2014 Bergsman DS, Zhou H, Bent SF. Molecular layer deposition of nanoscale organic films for nanoelectronics applications Ecs Transactions. 64: 87-96. DOI: 10.1149/06409.0087ecst  1
2014 Wangperawong A, Hsu PC, Yee Y, Herron SM, Clemens BM, Cui Y, Bent SF. Bifacial solar cell with SnS absorber by vapor transport deposition Applied Physics Letters. 105. DOI: 10.1063/1.4898092  1
2014 Geyer SM, Methaapanon R, Johnson R, Brennan S, Toney MF, Clemens B, Bent S. Structural evolution of platinum thin films grown by atomic layer deposition Journal of Applied Physics. 116. DOI: 10.1063/1.4892104  1
2014 Kim K, Lee HBR, Johnson RW, Tanskanen JT, Liu N, Kim MG, Pang C, Ahn C, Bent SF, Bao Z. Selective metal deposition at graphene line defects by atomic layer deposition Nature Communications. 5. DOI: 10.1038/ncomms5781  1
2014 Roelofs KE, Brennan TP, Bent SF. Interface engineering in inorganic-absorber nanostructured solar cells Journal of Physical Chemistry Letters. 5: 348-360. DOI: 10.1021/jz4023656  1
2014 Shong B, Brogaard RY, Sandoval TE, Bent SF. Coverage-dependent adsorption of bifunctional molecules: Detailed insights into interactions between adsorbates Journal of Physical Chemistry C. 118: 23811-23820. DOI: 10.1021/jp507349k  1
2014 Shong B, Bent SF. Thermally activated reactions of nitrobenzene at the Ge(100)-2 × 1 Surface Journal of Physical Chemistry C. 118: 29224-29233. DOI: 10.1021/jp505352k  1
2014 Hashemi FSM, Prasittichai C, Bent SF. A new resist for area selective atomic and molecular layer deposition on metal-dielectric patterns Journal of Physical Chemistry C. 118: 10957-10962. DOI: 10.1021/jp502669f  1
2014 Lee HBR, Pickrahn KL, Bent SF. Effect of O3 on growth of pt by atomic layer deposition Journal of Physical Chemistry C. 118: 12325-12332. DOI: 10.1021/jp502596n  1
2014 Gür TM, Bent SF, Prinz FB. Nanostructuring materials for solar-to-hydrogen conversion Journal of Physical Chemistry C. 118: 21301-21315. DOI: 10.1021/jp500966u  1
2014 Herron SM, Tanskanen JT, Roelofs KE, Bent SF. Highly textured tin(II) sulfide thin films formed from sheetlike nanocrystal inks Chemistry of Materials. 26: 7106-7113. DOI: 10.1021/cm503666y  1
2014 Tanskanen JT, Hägglund C, Bent SF. Correlating growth characteristics in atomic layer deposition with precursor molecular structure: The case of zinc tin oxide Chemistry of Materials. 26: 2795-2802. DOI: 10.1021/cm403913r  1
2014 Prasittichai C, Pickrahn KL, Minaye Hashemi FS, Bergsman DS, Bent SF. Improving area-selective molecular layer deposition by selective SAM removal Acs Applied Materials and Interfaces. 6: 17831-17836. DOI: 10.1021/am504441e  1
2014 Mullings MN, Hägglund C, Tanskanen JT, Yee Y, Geyer S, Bent SF. Thin film characterization of zinc tin oxide deposited by thermal atomic layer deposition Thin Solid Films. 556: 186-194. DOI: 10.1016/j.tsf.2014.01.068  1
2014 Johnson RW, Hultqvist A, Bent SF. A brief review of atomic layer deposition: From fundamentals to applications Materials Today. 17: 236-246. DOI: 10.1016/j.mattod.2014.04.026  1
2014 Roelofs KE, Brennan TP, Yang TQ, Bent SF. Interface engineering in solid-state quantum dot-sensitized solar cells: Strategies to improve charge collection Nanoscale Science and Engineering Forum 2013 - Core Programming Area At the 2013 Aiche Annual Meeting: Global Challenges For Engineering a Sustainable Future. 93-94.  1
2013 Geyer SM, Methaapanon R, Shong B, Pianetta PA, Bent SF. In Vacuo Photoemission Studies of Platinum Atomic Layer Deposition Using Synchrotron Radiation. The Journal of Physical Chemistry Letters. 4: 176-9. PMID 26291229 DOI: 10.1021/jz301475z  1
2013 Wong KT, Tanskanen JT, Bent SF. Formation of stable nitrene surface species by the reaction of adsorbed phenyl isocyanate at the Ge(100)-2 × 1 surface. Langmuir : the Acs Journal of Surfaces and Colloids. 29: 15842-50. PMID 24359033 DOI: 10.1021/la4036216  1
2013 Prasittichai C, Zhou H, Bent SF. Area selective molecular layer deposition of polyurea films. Acs Applied Materials & Interfaces. 5: 13391-6. PMID 24229350 DOI: 10.1021/am4043195  1
2013 Hägglund C, Zeltzer G, Ruiz R, Thomann I, Lee HBR, Brongersma ML, Bent SF. Self-assembly based plasmonic arrays tuned by atomic layer deposition for extreme visible light absorption Nano Letters. 13: 3352-3357. PMID 23805835 DOI: 10.1021/nl401641v  1
2013 Zhou H, Blackwell JM, Lee HBR, Bent SF. Highly sensitive, patternable organic films at the nanoscale made by bottom-up assembly Acs Applied Materials and Interfaces. 5: 3691-3696. PMID 23594160 DOI: 10.1021/am4002887  1
2013 Methaapanon R, Geyer SM, Hagglund C, Pianetta PA, Bent SF. Portable atomic layer deposition reactor for in situ synchrotron photoemission studies. The Review of Scientific Instruments. 84: 015104. PMID 23387692 DOI: 10.1063/1.4773230  1
2013 Lee HB, Baeck SH, Jaramillo TF, Bent SF. Growth of Pt nanowires by atomic layer deposition on highly ordered pyrolytic graphite. Nano Letters. 13: 457-63. PMID 23317031 DOI: 10.1021/nl303803p  1
2013 Zhou H, Bent SF. Novel photoresist thin films with in-situ photoacid generator by molecular layer deposition Proceedings of Spie - the International Society For Optical Engineering. 8682. DOI: 10.1117/12.2011572  1
2013 Mullings MN, Hägglund C, Bent SF. Tin oxide atomic layer deposition from tetrakis(dimethylamino)tin and water Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4812717  1
2013 Teplyakov AV, Bent SF. Semiconductor surface functionalization for advances in electronics, energy conversion, and dynamic systems Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4810784  1
2013 Zhou H, Bent SF. Fabrication of organic interfacial layers by molecular layer deposition: Present status and future opportunities Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4804609  1
2013 Roelofs KE, Brennan TP, Trejo O, Xu J, Prinz FB, Bent SF. Effects of QD surface coverage in solid-state PbS quantum dot-sensitized solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 1080-1083. DOI: 10.1109/PVSC.2013.6744328  1
2013 Wangperawong A, Herron SM, Runser RR, Hägglund C, Tanskanen JT, Lee HBR, Clemens BM, Bent SF. Vapor transport deposition and epitaxy of orthorhombic SnS on glass and NaCl substrates Applied Physics Letters. 103. DOI: 10.1063/1.4816746  1
2013 Brennan TP, Trejo O, Roelofs KE, Xu J, Prinz FB, Bent SF. Efficiency enhancement of solid-state PbS quantum dot-sensitized solar cells with Al2O3 barrier layer Journal of Materials Chemistry A. 1: 7566-7571. DOI: 10.1039/c3ta10903h  1
2013 Zhou H, Toney MF, Bent SF. Cross-linked ultrathin polyurea films via molecular layer deposition Macromolecules. 46: 5638-5643. DOI: 10.1021/ma400998m  1
2013 Geyer SM, Methaapanon R, Shong B, Pianetta PA, Bent SF. In vacuo photoemission studies of platinum atomic layer deposition using synchrotron radiation Journal of Physical Chemistry Letters. 4: 176-179. DOI: 10.1021/jz301475z  1
2013 Wong KT, Shong B, Sun W, Bent SF. Adsorption of trimethyl phosphite at the Ge(100)-2 × 1 surface by nucleophilic reaction Journal of Physical Chemistry C. 117: 26628-26635. DOI: 10.1021/jp408538e  1
2013 Brennan TP, Tanskanen JT, Roelofs KE, To JWF, Nguyen WH, Bakke JR, Ding IK, Hardin BE, Sellinger A, McGehee MD, Bent SF. TiO2 conduction band modulation with In2O3 recombination barrier layers in solid-state dye-sensitized solar cells Journal of Physical Chemistry C. 117: 24138-24149. DOI: 10.1021/jp406789k  1
2013 Wong KT, Bent SF. Adsorption of structural and stereoisomers of cyclohexanediamine at the ge(100)-2 × 1 surface: Geometric effects in adsorption on a semiconductor surface Journal of Physical Chemistry C. 117: 19063-19073. DOI: 10.1021/jp406423n  1
2013 Tanskanen JT, Bent SF. Insights into the surface chemistry of tin oxide atomic layer deposition from quantum chemical calculations Journal of Physical Chemistry C. 117: 19056-19062. DOI: 10.1021/jp4063324  1
2013 Zhou H, Bent SF. Highly stable ultrathin carbosiloxane films by molecular layer deposition Journal of Physical Chemistry C. 117: 19967-19973. DOI: 10.1021/jp4058725  1
2013 Roelofs KE, Brennan TP, Dominguez JC, Bailie CD, Margulis GY, Hoke ET, McGehee MD, Bent SF. Effect of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state CdS quantum dot-sensitized solar cells Journal of Physical Chemistry C. 117: 5584-5592. DOI: 10.1021/jp311846r  1
2013 Shong B, Bent SF. One-dimensional pattern formation of adsorbed molecules on the Ge(100)-2 × 1 surface driven by nearest-neighbor effects Journal of Physical Chemistry C. 117: 949-955. DOI: 10.1021/jp3078503  1
2013 Brennan TP, Tanskanen JT, Bakke JR, Nguyen WH, Nordlund D, Toney MF, McGehee MD, Sellinger A, Bent SF. Dynamical orientation of large molecules on oxide surfaces and its implications for dye-sensitized solar cells Chemistry of Materials. 25: 4354-4363. DOI: 10.1021/cm402609k  1
2013 Methaapanon R, Geyer SM, Brennan S, Bent SF. Size dependent effects in nucleation of Ru and Ru oxide thin films by atomic layer deposition measured by synchrotron radiation X-ray diffraction Chemistry of Materials. 25: 3458-3463. DOI: 10.1021/cm401585k  1
2013 Prasittichai C, Zhou H, Bent SF. Area selective molecular layer deposition of polyurea films Acs Applied Materials and Interfaces. 5: 13391-13396. DOI: 10.1021/am4043195  1
2013 Kachian JS, Squires KH, Bent SF. Competing geometric and electronic effects in adsorption of phenylenediamine structural isomers on the Ge(100)-2 × 1 surface Surface Science. 615: 72-79. DOI: 10.1016/j.susc.2013.03.024  1
2013 Bakke JR, Hägglund C, Jung HJ, Sinclair R, Bent SF. Atomic layer deposition of CdO and CdxZn1-xO films Materials Chemistry and Physics. 140: 465-471. DOI: 10.1016/j.matchemphys.2013.03.038  1
2013 Shong B, Hellstern TR, Bent SF. Adsorption of heterobifunctional 4-nitrophenol on the Ge(100) surface Engineering Sciences and Fundamentals 2013 - Core Programming Area At the 2013 Aiche Annual Meeting: Global Challenges For Engineering a Sustainable Future. 2: 840.  1
2012 Brennan TP, Bakke JR, Ding IK, Hardin BE, Nguyen WH, Mondal R, Bailie CD, Margulis GY, Hoke ET, Sellinger A, McGehee MD, Bent SF. The importance of dye chemistry and TiCl4 surface treatment in the behavior of Al2O3 recombination barrier layers deposited by atomic layer deposition in solid-state dye-sensitized solar cells. Physical Chemistry Chemical Physics : Pccp. 14: 12130-40. PMID 22850593 DOI: 10.1039/c2cp42388j  0.4
2012 Bakke JR, Tanskanen JT, Hägglund C, Pakkanen TA, Bent SF. Growth characteristics, material properties, and optical properties of zinc oxysulfide films deposited by atomic layer deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 30. DOI: 10.1116/1.3664758  1
2012 Roelofs KE, Brennan TP, Dominguez JC, Bent SF. Recombination barrier layers in solid-state quantum dot-sensitized solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 3040-3043. DOI: 10.1109/PVSC.2012.6318223  1
2012 Kronawitter CX, Kapilashrami M, Bakke JR, Bent SF, Chuang CH, Pong WF, Guo J, Vayssieres L, Mao SS. TiO 2-SnO 2:F interfacial electronic structure investigated by soft x-ray absorption spectroscopy Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/PhysRevB.85.125109  1
2012 Trinh C, Bakke JR, Brennan TP, Bent SF, Navarro F, Bartynski A, Thompson ME. Power losses in bilayer inverted small molecule organic solar cells Applied Physics Letters. 101. DOI: 10.1063/1.4769440  1
2012 Methaapanon R, Geyer SM, Lee HBR, Bent SF. The low temperature atomic layer deposition of ruthenium and the effect of oxygen exposure Journal of Materials Chemistry. 22: 25154-25160. DOI: 10.1039/c2jm35332f  1
2012 Brennan TP, Bakke JR, Ding IK, Hardin BE, Nguyen WH, Mondal R, Bailie CD, Margulis GY, Hoke ET, Sellinger A, McGehee MD, Bent SF. The importance of dye chemistry and TiCl 4 surface treatment in the behavior of Al 2O 3 recombination barrier layers deposited by atomic layer deposition in solid-state dye-sensitized solar cells Physical Chemistry Chemical Physics. 14: 12130-12140. DOI: 10.1039/c2cp42388j  1
2012 Wong KT, Chopra SN, Bent SF. Dissociative adsorption of dimethyl sulfoxide at the Ge(100)-2 × 1 surface Journal of Physical Chemistry C. 116: 26422-26430. DOI: 10.1021/jp309418e  1
2012 Wong KT, Chopra SN, Bent SF. Single versus dual attachment in the adsorption of diisocyanates at the Ge(100)-2 × 1 surface Journal of Physical Chemistry C. 116: 12670-12679. DOI: 10.1021/jp302930g  1
2012 Shong B, Bent SF. Transition in the molecular orientation of phenol adsorbates on the Ge(100)-2 × 1 surface Journal of Physical Chemistry C. 116: 7925-7930. DOI: 10.1021/jp3009767  1
2012 Shong B, Wong KT, Bent SF. Reaction of hydroquinone and p-benzoquinone with the Ge(100)-2 × 1 Surface Journal of Physical Chemistry C. 116: 4705-4713. DOI: 10.1021/jp210804v  1
2012 Lee HBR, Mullings MN, Jiang X, Clemens BM, Bent SF. Nucleation-controlled growth of nanoparticles by atomic layer deposition Chemistry of Materials. 24: 4051-4059. DOI: 10.1021/cm3014978  1
2012 Lee HBR, Bent SF. Microstructure-dependent nucleation in atomic layer deposition of Pt on TiO 2 Chemistry of Materials. 24: 279-286. DOI: 10.1021/cm202764b  1
2012 Pickrahn KL, Park SW, Gorlin Y, Lee HBR, Jaramillo TF, Bent SF. Active MnO x electrocatalysts prepared by atomic layer deposition for oxygen evolution and oxygen reduction reactions Advanced Energy Materials. 2: 1269-1277. DOI: 10.1002/aenm.201200230  1
2012 Lee HBR, Bent SF. Nanopatterning by Area-Selective Atomic Layer Deposition Atomic Layer Deposition of Nanostructured Materials. 193-225. DOI: 10.1002/9783527639915.ch9  1
2012 Wong KT, Bent SF. Pericyclic Reactions of Organic Molecules at Semiconductor Surfaces Functionalization of Semiconductor Surfaces. 51-88. DOI: 10.1002/9781118199770.ch4  1
2011 Kronawitter CX, Bakke JR, Wheeler DA, Wang WC, Chang C, Antoun BR, Zhang JZ, Guo J, Bent SF, Mao SS, Vayssieres L. Electron enrichment in 3d transition metal oxide hetero-nanostructures. Nano Letters. 11: 3855-61. PMID 21834542 DOI: 10.1021/nl201944h  1
2011 Bakke JR, Pickrahn KL, Brennan TP, Bent SF. Nanoengineering and interfacial engineering of photovoltaics by atomic layer deposition Nanoscale. 3: 3482-3508. PMID 21799978 DOI: 10.1039/c1nr10349k  1
2011 Zhou H, Bent SF. Molecular layer deposition of functional thin films for advanced lithographic patterning. Acs Applied Materials & Interfaces. 3: 505-11. PMID 21302918 DOI: 10.1021/am1010805  0.72
2011 Ardalan P, Brennan TP, Lee HB, Bakke JR, Ding IK, McGehee MD, Bent SF. Effects of self-assembled monolayers on solid-state CdS quantum dot sensitized solar cells. Acs Nano. 5: 1495-504. PMID 21299223 DOI: 10.1021/nn103371v  0.4
2011 Kachian JS, Tannaci J, Wright RJ, Tilley TD, Bent SF. Disulfide passivation of the Ge(100)-2 × 1 surface. Langmuir : the Acs Journal of Surfaces and Colloids. 27: 179-86. PMID 21141841 DOI: 10.1021/la103614f  1
2011 Bent SF, Kachian JS, Rodríguez-Reyes JCF, Teplyakov AV. Tuning the reactivity of semiconductor surfaces by functionalization with amines of different basicity Proceedings of the National Academy of Sciences of the United States of America. 108: 956-960. PMID 21068370 DOI: 10.1073/pnas.1006656107  1
2011 Wangperawong A, Hgglund C, Bent SF. Optical response of 3D nano-architecture solar cells and integration with 3D device physics Proceedings of Spie - the International Society For Optical Engineering. 8111. DOI: 10.1117/12.893168  1
2011 Tanskanen JT, Bakke JR, Pakkanen TA, Bent SF. Influence of organozinc ligand design on growth and material properties of ZnS and ZnO deposited by atomic layer deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 29. DOI: 10.1116/1.3572232  1
2011 Bakke JR, Hägglund C, Jung HJ, Sinclair R, Bent SF. Graded and alloyed II-VI semiconductors for photovoltaic buffer layers grown by atomic layer deposition (ALD) Conference Record of the Ieee Photovoltaic Specialists Conference. 002691-002695. DOI: 10.1109/PVSC.2011.6186503  1
2011 Wangperawong A, Bent SF. Modeling performance of three-dimensional nanojunction photovoltaic devices Conference Record of the Ieee Photovoltaic Specialists Conference. 002679-002682. DOI: 10.1109/PVSC.2011.6186500  1
2011 Herron SM, Wangperawong A, Bent SF. Chemical bath deposition and microstructuring of tin (II) sulfide films for photovoltaics Conference Record of the Ieee Photovoltaic Specialists Conference. 000368-000371. DOI: 10.1109/PVSC.2011.6185970  1
2011 Wangperawong A, Bent SF. Three-dimensional nanojunction device models for photovoltaics Applied Physics Letters. 98. DOI: 10.1063/1.3595411  1
2011 Bakke JR, Tanskanen JT, Jung HJ, Sinclair R, Bent SF. Atomic layer deposition of CdxZn1-xS films Journal of Materials Chemistry. 21: 743-751. DOI: 10.1039/c0jm02786c  1
2011 Ardalan P, Brennan TP, Lee HBR, Bakke JR, Ding IK, McGehee MD, Bent SF. Effects of self-assembled monolayers on solid-state CdS quantum dot sensitized solar cells Acs Nano. 5: 1495-1504. DOI: 10.1021/nn103371v  1
2011 Zhou H, Bent SF. Molecular layer deposition of functional thin films for advanced lithographic patterning Acs Applied Materials and Interfaces. 3: 505-511. DOI: 10.1021/am1010805  1
2011 Wangperawong A, King JS, Herron SM, Tran BP, Pangan-Okimoto K, Bent SF. Aqueous bath process for deposition of Cu2ZnSnS4 photovoltaic absorbers Thin Solid Films. 519: 2488-2492. DOI: 10.1016/j.tsf.2010.11.040  1
2011 Kachian JS, Jung SJ, Kim S, Bent SF. Coverage dependence of glycine adsorption on the Ge(100) - 2 × 1 surface Surface Science. 605: 760-769. DOI: 10.1016/j.susc.2011.01.015  1
2011 Brennan TP, Ardalan P, Lee HBR, Bakke JR, Ding IK, McGehee MD, Bent SF. Atomic layer deposition of CDS quantum dots for solid-state quantum dot sensitized solar cells Advanced Energy Materials. 1: 1169-1175. DOI: 10.1002/aenm.201100363  1
2011 Loscutoff PW, Zhou H, Clendenning S, Bent SF. Molecular layer deposition of nanoscale organic films for copper diffusion barriers Advanced Metallization Conference (Amc). 10-11.  1
2011 Bent S. Modifying interfaces for efficient solar energy conversion Acs National Meeting Book of Abstracts 1
2010 Tanskanen JT, Bakke JR, Bent SF, Pakkanen TA. ALD growth characteristics of ZnS films deposited from organozinc and hydrogen sulfide precursors. Langmuir : the Acs Journal of Surfaces and Colloids. 26: 11899-906. PMID 20553010 DOI: 10.1021/la101128w  0.44
2010 Ardalan P, Sun Y, Pianetta P, Musgrave CB, Bent SF. Reaction mechanism, bonding, and thermal stability of 1-alkanethiols self-assembled on halogenated Ge surfaces. Langmuir : the Acs Journal of Surfaces and Colloids. 26: 8419-29. PMID 20433151 DOI: 10.1021/la904864c  1
2010 Kachian JS, Wong KT, Bent SF. Periodic trends in organic functionalization of group IV semiconductor surfaces. Accounts of Chemical Research. 43: 346-55. PMID 20041705 DOI: 10.1021/ar900251s  1
2010 Loscutoff PW, Zhou H, Clendenning SB, Bent SF. Formation of organic nanoscale laminates and blends by molecular layer deposition. Acs Nano. 4: 331-41. PMID 20000603 DOI: 10.1021/nn901013r  1
2010 Mullings MN, Lee HBR, Marchack N, Jiang X, Chen Z, Gorlin Y, Lin KP, Bent SF. Area selective atomic layer deposition by microcontact printing with a water-soluble polymer Journal of the Electrochemical Society. 157: D600-D604. DOI: 10.1149/1.3491376  1
2010 Shim JH, Jiang X, Bent SF, Prinz FB. Catalysts with Pt surface coating by atomic layer deposition for solid oxide fuel cells Journal of the Electrochemical Society. 157: B793-B797. DOI: 10.1149/1.3368787  1
2010 Jiang X, Gür TM, Prinz FB, Bent SF. Sputtered Pt-Ru alloys as catalysts for highly concentrated methanol oxidation Journal of the Electrochemical Society. 157: B314-B319. DOI: 10.1149/1.3273081  1
2010 Wangperawong A, King JS, Herron SM, Tran BP, Pangan-Okimoto K, Bent SF. A chemical bath process for depositing Cu2ZnSnS4 photovoltaic absorbers Conference Record of the Ieee Photovoltaic Specialists Conference. 1986-1989. DOI: 10.1109/PVSC.2010.5616414  1
2010 Ardalan P, Brennan TP, Bakke JR, Bent SF. Phosphonate self-assembled monolayers as organic linkers in solid-state quantum dot sensetized solar cells Conference Record of the Ieee Photovoltaic Specialists Conference. 951-954. DOI: 10.1109/PVSC.2010.5614620  1
2010 Tanskanen JT, Bakke JR, Bent SF, Pakkanen TA. ALD growth characteristics of ZnS films deposited from organozinc and hydrogen sulfide precursors Langmuir. 26: 11899-11906. DOI: 10.1021/la101128w  1
2010 Kachian JS, Bent SF. Adsorption behavior of bifunctional molecules on Ge(100)-2 × 1: Comparison of mercaptoethanol and mercaptamine Journal of Physical Chemistry C. 114: 22230-22236. DOI: 10.1021/jp1085894  1
2010 Tanskanen JT, Bakke JR, Bent SF, Pakkanen TA. Molecular level insights into atomic layer deposition of CdS by quantum chemical calculations Journal of Physical Chemistry C. 114: 16618-16624. DOI: 10.1021/jp105911p  1
2010 Loscutoff PW, Wong KT, Bent SF. Reaction of phenyl isocyanate and phenyl isothiocyanate with the Ge(100)-2 × 1 surface Journal of Physical Chemistry C. 114: 14193-14201. DOI: 10.1021/jp104388a  1
2010 Methaapanon R, Bent SF. Comparative study of titanium dioxide atomic layer deposition on silicon dioxide and hydrogen-terminated silicon Journal of Physical Chemistry C. 114: 10498-10504. DOI: 10.1021/jp1013303  1
2010 Jiang X, Gür TM, Prinz FB, Bent SF. Atomic layer deposition (ALD) Co-deposited Pt-Ru binary and Pt skin catalysts for concentrated methanol oxidation Chemistry of Materials. 22: 3024-3032. DOI: 10.1021/cm902904u  1
2010 Loscutoff PW, Lee HBR, Bent SF. Deposition of ultrathin polythiourea films by molecular layer deposition Chemistry of Materials. 22: 5563-5569. DOI: 10.1021/cm1016239  1
2010 Bakke JR, Jung HJ, Tanskanen JT, Sinclair R, Bent SF. Atomic layer deposition of CdS films Chemistry of Materials. 22: 4669-4678. DOI: 10.1021/cm100874f  1
2010 Bakke JR, King JS, Jung HJ, Sinclair R, Bent SF. Atomic layer deposition of ZnS via in situ production of H2S Thin Solid Films. 518: 5400-5408. DOI: 10.1016/j.tsf.2010.03.074  1
2010 Loscutoff PW, Wong KT, Bent SF. Reaction of tert-butyl isocyanate and tert-butyl isothiocyanate at the Ge(100)-2×1 surface Surface Science. 604: 1791-1799. DOI: 10.1016/j.susc.2010.07.007  1
2010 Loscutoff PW, Clendenning SB, Bent SF. Fabrication of organic thin films for copper diffusion barrier layers using molecular layer deposition Materials Research Society Symposium Proceedings. 1249: 189-194.  1
2010 Brennan TP, Bakke JR, Mondal R, Miller CE, Nordlund D, Toney MF, Bent SF. Characterization of recombination barrier layers in dye-sensitized solar cells 10aiche - 2010 Aiche Annual Meeting, Conference Proceedings 0.4
2010 Bakke JR, Bent SF. Deposition of ZnS and CdS for graded CIGS buffer layers using in situ production of H2S Acs National Meeting Book of Abstracts 1
2009 ter Maat J, Regeling R, Yang M, Mullings MN, Bent SF, Zuilhof H. Photochemical covalent attachment of alkene-derived monolayers onto hydroxyl-terminated silica. Langmuir : the Acs Journal of Surfaces and Colloids. 25: 11592-7. PMID 19583192 DOI: 10.1021/la901551t  1
2009 Kachian JS, Bent SF. Sulfur versus oxygen reactivity of organic molecules at the Ge(100)-2 x 1 surface. Journal of the American Chemical Society. 131: 7005-15. PMID 19413324 DOI: 10.1021/ja808066t  1
2009 Ardalan P, Musgrave CB, Bent SF. Formation of alkanethiolate self-assembled monolayers at halide-terminated Ge surfaces. Langmuir : the Acs Journal of Surfaces and Colloids. 25: 2013-25. PMID 19152272 DOI: 10.1021/la803468e  1
2009 Bakke JR, Bent SF. Formation of CdxZn1-xS films for photovoltaic buffer layers by atomic layer deposition Ecs Transactions. 25: 9-14. DOI: 10.1149/1.3205038  1
2009 Jiang X, Bent SF. Area-selective ALD with soft lithographic methods: Using self-assembled monolayers to direct film deposition Journal of Physical Chemistry C. 113: 17613-17625. DOI: 10.1021/jp905317n  1
2009 Ghosal S, Baumann TF, King JS, Kucheyev SO, WAng Y, Worsley MA, Biener J, Bent SF, Hamza AV. Controlling atomic layer deposition of tio2 in aerogels through surface functionalization Chemistry of Materials. 21: 1989-1992. DOI: 10.1021/cm900636s  1
2009 Zaharias GA, Bent SF. Growth process of polyaniline thin films formed by hot wire CVD Chemical Vapor Deposition. 15: 133-141. DOI: 10.1002/cvde.200806743  1
2009 Ardalan P, Musgrave CB, Bent SF. Effects of surface functionalization on titanium dioxide atomic layer deposition on Ge surfaces Ecs Transactions. 25: 131-139.  1
2008 Bent SF. Surface patterning: Silicon falls into line. Nature Nanotechnology. 3: 185-6. PMID 18654496 DOI: 10.1038/nnano.2008.79  1
2008 King JS, Wittstock A, Biener J, Kucheyev SO, Wang YM, Baumann TF, Giri SK, Hamza AV, Baeumer M, Bent SF. Ultralow loading Pt nanocatalysts prepared by atomic layer deposition on carbon aerogels. Nano Letters. 8: 2405-9. PMID 18636780 DOI: 10.1021/nl801299z  1
2008 Jiang X, Prinz FB, Bent SF. Pt-Ru alloys deposited by sputtering as catalysts for methanol oxidation Ecs Transactions. 16: 605-612. DOI: 10.1149/l.2981895  1
2008 Lee W, Chao C, Jiang X, Hwang J, Bent SF, Prinz FB. Oxidative removal of self-assembled monolayers for selective atomic layer deposition Ecs Transactions. 16: 173-179. DOI: 10.1149/1.2979992  1
2008 Ardalan P, Pickett ER, Harris JS, Marshall AF, Bent SF. Formation of an oxide-free GeTiO2 interface by atomic layer deposition on brominated Ge Applied Physics Letters. 92. DOI: 10.1063/1.2951608  1
2008 Jiang X, Huang H, Prinz FB, Bent SF. Application of atomic layer deposite of platinum to solid oxide fuel cells Chemistry of Materials. 20: 3897-3905. DOI: 10.1021/cm7033189  1
2008 Bent SF. Semiconductor surface chemistry Chemical Bonding At Surfaces and Interfaces. 323-395. DOI: 10.1016/B978-044452837-7.50006-X  1
2007 Bent SF. Heads or tails: which is more important in molecular self-assembly? Acs Nano. 1: 10-2. PMID 19203125 DOI: 10.1021/nn700118k  1
2007 Mehenti NZ, Fishman HA, Bent SF. A model neural interface based on functional chemical stimulation. Biomedical Microdevices. 9: 579-86. PMID 17520371 DOI: 10.1007/s10544-007-9069-z  1
2007 Lee CJ, Fishman HA, Bent SF. Spatial cues for the enhancement of retinal pigment epithelial cell function in potential transplants. Biomaterials. 28: 2192-201. PMID 17267030 DOI: 10.1016/j.biomaterials.2007.01.018  1
2007 Hong J, Porter DW, Sreenivasan R, McIntyre PC, Bent SF. ALD resist formed by vapor-deposited self-assembled monolayers. Langmuir : the Acs Journal of Surfaces and Colloids. 23: 1160-5. PMID 17241027 DOI: 10.1021/la0606401  1
2007 Lu JT, Lee CJ, Bent SF, Fishman HA, Sabelman EE. Thin collagen film scaffolds for retinal epithelial cell culture. Biomaterials. 28: 1486-94. PMID 17161864 DOI: 10.1016/j.biomaterials.2006.11.023  1
2007 Jiang X, Bent SF. Area-selective atomic layer deposition of platinum on YSZ substrates using microcontact printed SAMs Journal of the Electrochemical Society. 154: D648-D656. DOI: 10.1149/1.2789301  1
2007 Jiang X, Bent SF. Atomic layer deposition of platinum for solid oxide fuel cells Ecs Transactions. 3: 249-259. DOI: 10.1149/1.2721494  1
2007 Worsley MA, Bent SF, Fuller NCM, Tai TL, Doyle J, Rothwell M, Dalton T. Effect of radical species density and ion bombardment during ashing of extreme ultralow- κ interlevel dielectric materials Journal of Applied Physics. 101. DOI: 10.1063/1.2405123  1
2007 Keung AJ, Filler MA, Bent SF. Thermal control of amide product distributions at the Ge(100)-2×1 surface Journal of Physical Chemistry C. 111: 411-419. DOI: 10.1021/jp065278d  1
2007 Filler MA, Musgrave CB, Bent SF. Carbon-oxygen coupling in the reaction of formaldehyde on Ge(100)-2×1 Journal of Physical Chemistry C. 111: 1739-1746. DOI: 10.1021/jp064820v  1
2007 Jiang X, Chen R, Bent SF. Spatial control over atomic layer deposition using microcontact-printed resists Surface and Coatings Technology. 201: 8799-8807. DOI: 10.1016/j.surfcoat.2007.04.126  1
2006 Mehenti NZ, Tsien GS, Leng T, Fishman HA, Bent SF. A model retinal interface based on directed neuronal growth for single cell stimulation. Biomedical Microdevices. 8: 141-50. PMID 16688573 DOI: 10.1007/s10544-006-7709-3  1
2006 Loscutoff PW, Bent SF. Reactivity of the germanium surface: Chemical passivation and functionalization. Annual Review of Physical Chemistry. 57: 467-95. PMID 16599818 DOI: 10.1146/annurev.physchem.56.092503.141307  1
2006 Filler MA, Keung AJ, Porter DW, Bent SF. Formation of surface-bound acyl groups by reaction of acyl halides on ge(100)-2x1. The Journal of Physical Chemistry. B. 110: 4115-24. PMID 16509705 DOI: 10.1021/jp055685+  1
2006 Filler MA, Van Deventer JA, Keung AJ, Bent SF. Carboxylic acid chemistry at the Ge(100)-2 x 1 interface: bidentate bridging structure formation on a semiconductor surface. Journal of the American Chemical Society. 128: 770-9. PMID 16417366 DOI: 10.1021/ja0549502  1
2006 Lee CJ, Vroom JA, Fishman HA, Bent SF. Determination of human lens capsule permeability and its feasibility as a replacement for Bruch's membrane. Biomaterials. 27: 1670-8. PMID 16199085 DOI: 10.1016/j.biomaterials.2005.09.008  1
2006 Zaharias GA, Duan HL, Bent SF. Detecting free radicals during the hot wire chemical vapor deposition of amorphous silicon carbide films using single-source precursors Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 24: 542-549. DOI: 10.1116/1.2194023  1
2006 Worsley MA, Bent SF, Fuller NCM, Dalton T. Characterization of neutral species densities in dual frequency capacitively coupled photoresist ash plasmas by optical emission actinometry Journal of Applied Physics. 100. DOI: 10.1063/1.2358303  1
2006 Chen K, Bent SF. Highly stable monolayer resists for atomic layer deposition on germanium and silicon Chemistry of Materials. 18: 3733-3741. DOI: 10.1021/cm0607785  1
2006 Zaharias GA, Shi HH, Bent SF. Characterization of polyconjugated thin films synthesized by hot-wire chemical vapor deposition of aniline Thin Solid Films. 501: 341-345. DOI: 10.1016/j.tsf.2005.07.145  1
2006 Chen R, Bent SF. Chemistry for positive pattern transfer using area-selective atomic layer deposition Advanced Materials. 18: 1086-1090. DOI: 10.1002/adma.200502470  1
2006 Chen R, Porter DW, Kim H, Mcintyre PC, Bent SF. Area selective atomic layer deposition by soft lithography Materials Research Society Symposium Proceedings. 917: 161-166.  1
2005 Kim A, Filler MA, Kim S, Bent SF. Ethylenediamine on Ge(100)-2 x 1: the role of interdimer interactions. The Journal of Physical Chemistry. B. 109: 19817-22. PMID 16853562 DOI: 10.1021/jp054340o  1
2005 Kim A, Filler MA, Kim S, Bent SF. Layer-by-layer growth on Ge(100) via spontaneous urea coupling reactions. Journal of the American Chemical Society. 127: 6123-32. PMID 15839714 DOI: 10.1021/ja042751x  1
2005 Worsley MA, Bent SF, Gates SM, Fuller NCM, Volksen W, Steen M, Dalton T. Effect of plasma interactions with low-κ films as a function of porosity, plasma chemistry, and temperature Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 395-405. DOI: 10.1116/1.1861038  1
2005 Chen R, Kim H, McIntyre PC, Porter DW, Bent SF. Achieving area-selective atomic layer deposition on patterned substrates by selective surface modification Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1922076  1
2005 Chen R, Kim H, McIntyre PC, Bent SF. Investigation of self-assembled monolayer resists for hafnium dioxide atomic layer deposition Chemistry of Materials. 17: 536-544. DOI: 10.1021/cm0486666  1
2005 Duan HL, Bent SF. The influence of filament material on radical production in hot wire chemical vapor deposition of a-Si:H Thin Solid Films. 485: 126-134. DOI: 10.1016/j.tsf.2005.03.038  1
2005 Keung AJ, Filler MA, Porter DW, Bent SF. Tertiary amide chemistry at the Ge(1 0 0)-2 × 1 surface Surface Science. 599: 41-54. DOI: 10.1016/j.susc.2005.09.035  1
2005 Worsley MA, Roberts M, Bent SF, Gates SM, Shaw T, Volksen W, Miller R. Detection of open or closed porosity in low-κ dielectrics by solvent diffusion Microelectronic Engineering. 82: 113-118. DOI: 10.1016/j.mee.2005.06.007  1
2004 Mui C, Bent SF, Musgrave CB. A Density Functional Theory Study on the Effect of Ge Alloying on Hydrogen Desorption from SiGe Alloy Surfaces. The Journal of Physical Chemistry. B. 108: 6336-50. PMID 18950120 DOI: 10.1021/jp037948a  1
2004 Lee CJ, Blumenkranz MS, Fishman HA, Bent SF. Controlling cell adhesion on human tissue by soft lithography. Langmuir : the Acs Journal of Surfaces and Colloids. 20: 4155-61. PMID 15969410 DOI: 10.1021/la035467c  1
2004 Leng T, Wu P, Mehenti NZ, Bent SF, Marmor MF, Blumenkranz MS, Fishman HA. Directed retinal nerve cell growth for use in a retinal prosthesis interface. Investigative Ophthalmology & Visual Science. 45: 4132-7. PMID 15505066 DOI: 10.1167/iovs.03-1335  1
2004 Chen R, Kim H, McIntyre PC, Bent SF. Self-assembled monolayer resist for atomic layer deposition of HfO 2 and ZrO 2 high-κ gate dielectrics Applied Physics Letters. 84: 4017-4019. DOI: 10.1063/1.1751211  1
2004 Mui C, Bent SF, Musgrave CB. Quantum chemistry based statistical mechanical model of hydrogen desorption from Si(100)-2 × 1, Ge(100)-2 × 1, and SiGe alloy surfaces Journal of Physical Chemistry B. 108: 18243-18253. DOI: 10.1021/jp0379493  1
2004 Chen R, Kim H, McIntyre PC, Bent SF. Controlling area-selective atomic layer deposition of HfO 2 dielectric by self-assembled monolayers Materials Research Society Symposium Proceedings. 811: 57-62.  1
2004 Zaharias GA, Shi HH, Bent SF. Hot wire chemical vapor deposition as a novel synthetic method for electroactive organic thin films Materials Research Society Symposium Proceedings. 814: 361-366.  1
2003 Peterman MC, Mehenti NZ, Bilbao KV, Lee CJ, Leng T, Noolandi J, Bent SF, Blumenkranz MS, Fishman HA. The Artificial Synapse Chip: a flexible retinal interface based on directed retinal cell growth and neurotransmitter stimulation. Artificial Organs. 27: 975-85. PMID 14616516 DOI: 10.1046/j.1525-1594.2003.07307.x  1
2003 Peterman MC, Bloom DM, Lee C, Bent SF, Marmor MF, Blumenkranz MS, Fishman HA. Localized neurotransmitter release for use in a prototype retinal interface. Investigative Ophthalmology & Visual Science. 44: 3144-9. PMID 12824264 DOI: 10.1167/iovs.02-1097  1
2003 Filler MA, Mui C, Musgrave CB, Bent SF. Competition and selectivity in the reaction of nitriles on ge(100)-2x1. Journal of the American Chemical Society. 125: 4928-36. PMID 12696912 DOI: 10.1021/ja027887e  1
2003 Filler MA, Bent SF. The surface as molecular reagent: Organic chemistry at the semiconductor interface Progress in Surface Science. 73. DOI: 10.1016/S0079-6816(03)00035-2  1
2003 Worsley MA, Bent SF, Gates SM, Kumar K, Dalton T, Hedrick JC. The study of modified layers in SiCOH dielectrics using spectroscopic ellipsometry Materials Research Society Symposium - Proceedings. 766: 235-239.  1
2003 Mui C, Filler MA, Bent SF, Musgrave CB. Reactions of nitriles at semiconductor surfaces Journal of Physical Chemistry B. 107: 12256-12267.  1
2003 Wang GT, Mui C, Tannaci JF, Filler MA, Musgrave CB, Bent SF. Reactions of cyclic aliphatic and aromatic amines on Ge(100)-2×1 and Si(100)-2×1 Journal of Physical Chemistry B. 107: 4982-4996.  1
2002 Lee CJ, Huie P, Leng T, Peterman MC, Marmor MF, Blumenkranz MS, Bent SF, Fishman HA. Microcontact printing on human tissue for retinal cell transplantation. Archives of Ophthalmology (Chicago, Ill. : 1960). 120: 1714-8. PMID 12470147  1
2002 Wang GT, Mui C, Musgrave CB, Bent SF. Competition and selectivity of organic reactions on semiconductor surfaces: reaction of unsaturated ketones on Si(100)-2 x 1 and Ge(100)-2 x 1. Journal of the American Chemical Society. 124: 8990-9004. PMID 12137555 DOI: 10.1021/ja026330w  1
2002 Mui C, Han JH, Wang GT, Musgrave CB, Bent SF. Proton transfer reactions on semiconductor surfaces. Journal of the American Chemical Society. 124: 4027-38. PMID 11942841 DOI: 10.1021/ja0171512  1
2002 Bent SF. Attaching organic layers to semiconductor surfaces Journal of Physical Chemistry B. 106: 2830-2842. DOI: 10.1021/jp012995t  1
2002 Duan HL, Zaharias GA, Bent SF. Detecting reactive species in hot wire chemical vapor deposition Current Opinion in Solid State and Materials Science. 6: 471-477. DOI: 10.1016/S1359-0286(02)00076-1  1
2002 Bent SF. Organic functionalization of group IV semiconductor surfaces: Principles, examples, applications, and prospects Surface Science. 500: 879-903. DOI: 10.1016/S0039-6028(01)01553-9  1
2002 Duan HL, Zaharias GA, Bent SF. Effect of filament material on the decomposition of SiH4 in hot wire CVD of Si-based films Materials Research Society Symposium - Proceedings. 715: 21-30.  1
2001 Mui C, Wang GT, Bent SF, Musgrave CB. Reactions of methylamines at the Si(100)-2×1 surface Journal of Chemical Physics. 114: 10170-10180. DOI: 10.1063/1.1370056  1
2001 Duan HL, Zaharias GA, Bent SF. Probing radicals in hot wire decomposition of silane using single photon ionization Applied Physics Letters. 78: 1784-1786. DOI: 10.1063/1.1355994  1
2001 Wang GT, Mui C, Musgrave CB, Bent SF. Example of a thermodynamically controlled reaction on a semiconductor surface: Acetone on Ge(100)-2 × 1 Journal of Physical Chemistry B. 105: 12559-12565. DOI: 10.1021/jp013058o  1
2001 Russell JN, Butler JE, Wang GT, Bent SF, Hovis JS, Hamers RJ, D'Evelyn MP. π bond versus radical character of the diamond (1 0 0)-2 × 1 surface Materials Chemistry and Physics. 72: 147-151. DOI: 10.1016/S0254-0584(01)00425-4  1
2001 Duan HL, Zaharias GA, Bent SF. The effect of filament temperature on the gaseous radicals in the hot wire decomposition of silane Thin Solid Films. 395: 36-41. DOI: 10.1016/S0040-6090(01)01203-2  1
2001 Duan HL, Zaharias GA, Bent SF. Identification of growth precursors in hot wire CVD of amorphous silicon films Materials Research Society Symposium - Proceedings. 664: A311-A316.  1
2001 Wang GT, Mui C, Musgrave CB, Bent SF. Effect of a methyl-protecting group on the adsorption of pyrrolidine on Si(100)-2 × Journal of Physical Chemistry B. 105: 3295-3299.  1
2000 Wang GT, Bent SF, Russell JN, Butler JE, D'Evelyn MP. Functionalization of diamond(100) by Diels-Alder chemistry [17] Journal of the American Chemical Society. 122: 744-745. DOI: 10.1021/ja993024i  1
2000 Lee MS, Bent SF. Temperature effects in the hot wire chemical vapor deposition of amorphous hydrogenated silicon carbon alloy Journal of Applied Physics. 87: 4600-4610.  1
2000 Kong MJ, Teplyakov AV, Jagmohan J, Lyubovitsky JG, Mui C, Bent SF. Interaction of Ce cyclic hydrocarbons with a Si(100)-2×1 surface: Adsorption and hydrogenation reactions Journal of Physical Chemistry B. 104: 3000-3007.  1
2000 Mui C, Bent SF, Musgrave CB. A theoretical study of the structure and thermochemistry of 1,3-butadiene on the Ge/Si(100)-2 × 1 surface Journal of Physical Chemistry A. 104: 2457-2462.  1
1999 Duan HL, Bent SF. In situ diagnostics of methane/hydrogen plasma interactions with Si(100) Materials Research Society Symposium - Proceedings. 569: 179-184.  1
1999 Wang GT, Mui C, Musgrave CB, Bent SF. Cycloaddition of Cyclopentadiene and Dicyclopentadiene on Si(100)-2x1: Comparison of Monomer and Dimer Adsorption Journal of Physical Chemistry B. 103: 6803-6808.  1
1999 Lal P, Teplyakov AV, Noah Y, Kong MJ, Wang GT, Bent SF. Adsorption of ethylene on the Ge(100)-2×1 surface: Coverage and time-dependent behavior Journal of Chemical Physics. 110: 10545-10553.  1
1998 Lee MS, Bent SF. Spectroscopic and thermal studies of a-SiC:H film growth: Comparison of mono-, tri-, and tetramethylsilane Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 1658-1663. DOI: 10.1116/1.581138  1
1998 Teplyakov AV, Lal P, Noah YA, Bent SF. Evidence for a retro-Diels-Alder reaction on a single crystalline surface: Butadienes on Ge(100) [16] Journal of the American Chemical Society. 120: 7377-7378. DOI: 10.1021/ja980243f  1
1998 Kong MJ, Teplyakov AV, Lyubovitsky JG, Bent SF. NEXAFS studies of adsorption of benzene on Si(100)-2 x 1 Surface Science. 411: 286-293.  1
1998 Teplyakov AV, Kong MJ, Bent SF. Diels-Alder reactions of butadienes with the Si(100)-2×1 surface as a dienophile: Vibrational spectroscopy, thermal desorption and near edge x-ray absorption fine structure studies Journal of Chemical Physics. 108: 4599-4606.  1
1997 Chiang CM, Gates SM, Lee SS, Kong M, Bent SF. Etching, insertion, and abstraction reactions of atomic deuterium with amorphous silicon hydride films Journal of Physical Chemistry B. 101: 9537-9547.  1
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