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Jerzy Ruzyllo - Publications

Affiliations: 
Pennsylvania State University, State College, PA, United States 
Area:
Electronics and Electrical Engineering, Materials Science Engineering, Condensed Matter Physics
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51 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Sabeeh AH, Brigeman AN, Ruzyllo J. Performance of Single-Crystal Silicon Solar Cells With Mist-Deposited Nanocrystalline Quantum Dot Downshifting Films Ieee Journal of Photovoltaics. 9: 1006-1011. DOI: 10.1109/Jphotov.2019.2914439  0.306
2017 Sabeeh AH, Price JS, Ruzyllo J. Effect of lift-off conditions on micropatterning of nanocrystalline quantum dot films Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35: 61802. DOI: 10.1116/1.4989450  0.307
2017 Drummond PJ, Wali A, Barth MJ, Diehm AM, Datta S, Ruzyllo J. Photoconductance Decay Characterization of 3D Multi-Fin Silicon on SOI Substrates Ieee Electron Device Letters. 38: 1513-1515. DOI: 10.1109/Led.2017.2749205  0.414
2016 Ruzyllo J, Drummond PJ. Electrical Characterization of As-Processed Semiconductor Surfaces - Invited Paper Solid State Phenomena. 255: 299-303. DOI: 10.4028/Www.Scientific.Net/Ssp.255.299  0.384
2016 Arora A, Drummond PJ, Ruzyllo J. Electrical characterization of silicon-on-insulatorwafers using photo-conductance decay (PCD) method Ecs Journal of Solid State Science and Technology. 5: P3069-P3072. DOI: 10.1149/2.0121604Jss  0.4
2014 Ruzyllo J, Hattori T. Preface to the Focus Issue on Semiconductor Surface Cleaning and Conditioning Ecs Journal of Solid State Science and Technology. 3: Y1-Y1. DOI: 10.1149/2.021401Jss  0.383
2014 Ruzyllo J. Assessment of the Progress in Gas-Phase Processing of Silicon Surfaces Ecs Journal of Solid State Science and Technology. 3. DOI: 10.1149/2.016401Jss  0.34
2013 Ruzyllo J. The Transistor and Its Many Facets The Electrochemical Society Interface. 22: 39-39. DOI: 10.1149/2.F03131If  0.319
2013 Drummond PJ, Bhatia D, Ruzyllo J. Measurement of effective carrier lifetime at the semiconductor–dielectric interface by Photoconductive Decay (PCD) Method Solid-State Electronics. 81: 130-134. DOI: 10.1016/J.Sse.2012.11.007  0.4
2012 Pickering S, Kshirsagar A, Ruzyllo J, Xu J. Patterned mist deposition of tri-colour CdSe/ZnS quantum dot films toward RGB LED devices Opto-Electronics Review. 20. DOI: 10.2478/S11772-012-0019-9  0.323
2011 Drummond PJ, Bhatia D, Kshirsagar A, Ramani S, Ruzyllo J. Studies of photoconductance decay method for characterization of near-surface electrical properties of semiconductors Thin Solid Films. 519: 7621-7626. DOI: 10.1016/J.Tsf.2011.04.212  0.43
2011 Drummond P, Kshirsagar A, Ruzyllo J. Characterization of near-surface electrical properties of multi-crystalline silicon wafers Solid-State Electronics. 55: 29-36. DOI: 10.1016/J.Sse.2010.09.005  0.431
2009 Roman P, Torek K, Shanmugasundaram K, Mumbauer P, Vestyk D, Hammond P, Ruzyllo J. Current Advances in Anhydrous HF/Organic Solvent Processing of Semiconductor Surfaces Solid State Phenomena. 231-234. DOI: 10.4028/Www.Scientific.Net/Ssp.145-146.231  0.409
2009 Price SC, Shanmugasundaram K, Ramani S, Zhu T, Zhang F, Xu J, Mohney SE, Zhang Q, Kshirsagar A, Ruzyllo J. Studies of mist deposition for the formation of quantum dot CdSe films Semiconductor Science and Technology. 24. DOI: 10.1088/0268-1242/24/10/105024  0.323
2008 Erdamar M, Shanmugasundaram K, Roman P, Mumbauer P, Klimkiewicz M, Ruzyllo J. Deep lateral anhydrous HF/methanol etching for MEMS release processes Journal of Micro-Nanolithography Mems and Moems. 7: 33014. DOI: 10.1117/1.2959177  0.373
2008 Shanmugasundaram K, Price SC, Li W, Jiang H, Huang J, Wang QK, Yang Y, Ruzyllo J. Studies of mist deposition in the fabrication of blue organic light emitting diodes Semiconductor Science and Technology. 23. DOI: 10.1088/0268-1242/23/7/075036  0.357
2008 Zhu T, Shanmugasundaram K, Price SC, Ruzyllo J, Zhang F, Xu J, Mohney SE, Zhang Q, Wang AY. Mist fabrication of light emitting diodes with colloidal nanocrystal quantum dots Applied Physics Letters. 92. DOI: 10.1063/1.2834734  0.343
2007 Chang K, Shanmugasundaram K, Shallenberger J, Ruzyllo J. Studies of Hf(Si,O) dielectrics for metal-oxide-semiconductor applications Thin Solid Films. 515: 3802-3805. DOI: 10.1016/J.Tsf.2006.09.048  0.312
2007 Shanmugasundaram K, Brubaker M, Chang K, Mumbauer P, Roman P, Ruzyllo J. Studies of solution processed metal oxides on silicon Microelectronic Engineering. 84: 2294-2297. DOI: 10.1016/J.Mee.2007.04.098  0.383
2006 Chang K, Chang FM, Ruzyllo J. Charge trapping in HfO2 and HfSiO4 MOS gate dielectrics Solid-State Electronics. 50: 1670-1672. DOI: 10.1016/J.Sse.2006.08.010  0.375
2004 Roux VL, Machicoane G, Kerdiles S, Laffitte R, Béchu N, Vallier L, Borsoni G, Korwin-Pawlowski ML, Roman P, Wu C-, Ruzyllo J. Etching of Silicon Native Oxide Using Ultraslow Multicharged Arq + Ions Journal of the Electrochemical Society. 151. DOI: 10.1149/1.1633763  0.328
2004 Chang K, Shanmugasundaram K, Lee DO, Roman P, Wu CT, Wang J, Shallenberger J, Mumbauer P, Grant R, Ridley R, Dolny G, Ruzyllo J. Silicon surface treatments in advanced MOS gate processing Microelectronic Engineering. 72: 130-135. DOI: 10.1016/J.Mee.2003.12.028  0.466
2003 Danel A, Tsai CL, Shanmugasundaram K, Tardif F, Kamieniecki E, Ruzyllo J. Cleaning of Si Surfaces by Lamp Illumination Solid State Phenomena. 92: 195-198. DOI: 10.4028/Www.Scientific.Net/Ssp.92.195  0.428
2003 Wang J, Roman P, Kamieniecki E, Ruzyllo J. Surface charge evolution during early stage of thermal oxidation of silicon Electrochemical and Solid State Letters. 6. DOI: 10.1149/1.1563873  0.426
2003 Tsai C-, Roman P, Wu C-, Pantano C, Berry J, Kamieniecki E, Ruzyllo J. Control of Organic Contamination of Silicon Surfaces Using White Light Illumination in Ambient Air Journal of the Electrochemical Society. 150. DOI: 10.1149/1.1527053  0.4
2003 Suliman SA, Venkataraman B, Wu CT, Ridley RS, Dolny GM, Awadelkarim OO, Fonash SJ, Ruzyllo J. Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition Solid-State Electronics. 47: 899-905. DOI: 10.1016/S0038-1101(02)00442-2  0.401
2003 Wu C, Mieckowski A, Ridley R, Dolny G, Grebs T, Linn J, Ruzyllo J. Effect of nitridation on the reliability of thick gate oxides Microelectronics Reliability. 43: 43-47. DOI: 10.1016/S0026-2714(02)00122-1  0.374
2002 Jiang J, Awadelkarim OO, Lee DO, Roman P, Ruzyllo J. On the capacitance of metal/high-k dielectric material stack/silicon structures Solid-State Electronics. 46: 1991-1995. DOI: 10.1016/S0038-1101(02)00167-3  0.325
2002 Lee DO, Roman P, Wu CT, Mumbauer P, Brubaker M, Grant R, Ruzyllo J. Mist deposited high-k dielectrics for next generation MOS gates Solid-State Electronics. 46: 1671-1677. DOI: 10.1016/S0038-1101(02)00163-6  0.37
2001 Wu C-, Ridley R, Roman P, Dolny G, Grebs T, Hao J, Ruzyllo J. The Effect of Surface Treatments and Growth Conditions on Electrical Characteristics of Thick (>50 nm) Gate Oxides Journal of the Electrochemical Society. 148. DOI: 10.1149/1.1390347  0.401
2001 Lee DO, Roman P, Wu CT, Mahoney W, Horn M, Mumbauer P, Brubaker M, Grant R, Ruzyllo J. Studies of mist deposited high-k dielectrics for MOS gates Microelectronic Engineering. 59: 405-408. DOI: 10.1016/S0167-9317(01)00676-1  0.373
2001 Lukasiak L, Roman P, Jakubowski A, Ruzyllo J. Analysis of surface and interface charge interactions in silicon on insulator (SOI) substrates Solid-State Electronics. 45: 95-100. DOI: 10.1016/S0038-1101(00)00224-0  0.417
1999 Staffa J, Fakhouri S, Brubaker M, Roman P, Ruzyllo J. Effects Controlling Initiation and Termination of Gas‐Phase Cleaning Reactions Journal of the Electrochemical Society. 146: 321-326. DOI: 10.1149/1.1391607  0.362
1999 Ruzyllo J, Röhr E, Baeyens M, Mertens P, Heyns M. Fluorine in Thermal Oxides from HF Preoxidation Surface Treatments Electrochemical and Solid State Letters. 2: 336-338. DOI: 10.1149/1.1390828  0.359
1999 Brubaker M, Roman P, Staffa J, Ruzyllo J. Monitoring of Chemical Oxide Removal from Silicon Surfaces Using a Surface Photovoltage Technique Electrochemical and Solid State Letters. 1: 130-132. DOI: 10.1149/1.1390660  0.416
1999 Roman P, Lee DO, Brubaker M, Kamieniecki E, Ruzyllo J. Characterization of conductive oxides on silicon using non-contact surface charge profiling Microelectronic Engineering. 48: 181-184. DOI: 10.1016/S0167-9317(99)00366-4  0.407
1998 Ruzyllo J, Röhr E, Baeyens M, Bearda T, Mertens PW, Heyns MM. Gas-Phase Surface Processing Prior to 3.2 nm Gate Oxidation Solid State Phenomena. 85-88. DOI: 10.4028/Www.Scientific.Net/Ssp.65-66.85  0.37
1998 Ruzyllo J, Röhr E, Caymax M, Baeyens M, Conard T, Mertens P, Heyns M. Role of UV/chlorine exposure during dry surface conditioning before integrated epi deposition process Solid State Phenomena. 233-236. DOI: 10.4028/Www.Scientific.Net/Ssp.65-66.233  0.342
1998 Roman P, Brubaker M, Staffa J, Kamieniecki E, Ruzyllo J. Non-contact monitoring of electrical characteristics of silicon surface and near-surface region Characterization and Metrology For Ulsi Technology. 449: 250-254. DOI: 10.1063/1.56804  0.392
1998 Roman P, Staffa J, Fakhouri S, Brubaker M, Ruzyllo J, Torek K, Kamieniecki E. Surface dopant concentration monitoring using noncontact surface charge profiling Journal of Applied Physics. 83: 2297-2300. DOI: 10.1063/1.366972  0.374
1996 Roman P, Staffa J, Fakhouri S, Ruzyllo J, Kamieniecki E. Monitoring of Dopant Activation in Sub-Surface P-Type Si Using the Surface Charge Profiling (SCP) Method Mrs Proceedings. 448: 425. DOI: 10.1557/Proc-448-425  0.368
1996 Staffa J, Roman P, Chang K, Torek K, Ruzyllo J. Anhydrous Hf Processing as an Alternative to Hf/Water Processes Mrs Proceedings. 447: 9. DOI: 10.1557/Proc-447-9  0.331
1995 Roman P, Hwang D, Torek K, Ruzyllo J, Kamieniecki E. Monitoring Of HF/H2O Treated Silicon Surfaces Using Noncontact Surface Charge Measurements Mrs Proceedings. 386. DOI: 10.1557/Proc-386-401  0.39
1995 Staffa J, Hwang D, Luther B, Ruzyllo J, Grant R. Temperature dependence of the etch rate and selectivity of silicon nitride over silicon dioxide in remote plasma NF3/Cl2 Applied Physics Letters. 67: 1902-1904. DOI: 10.1063/1.114371  0.336
1993 Ruzyllo J. Etching of Thermal Oxides in Low Pressure Anhydrous HF∕CH[sub 3]OH Gas Mixture at Elevated Temperature Journal of the Electrochemical Society. 140: L64. DOI: 10.1149/1.2056249  0.33
1993 Beck RB, Brozek T, Ruzyllo J, Hossain SD, Tressler RE. Effect of carbon on thermal oxidation of silicon and electrical properties of SiO 2 -Si structures Journal of Electronic Materials. 22: 689-694. DOI: 10.1007/Bf02666419  0.351
1991 Marsh J, Ruzyllo J. Breakdown characteristics of oxides formed on fluorinated silicon surfaces Thin Solid Films. 202: 221-226. DOI: 10.1016/0040-6090(91)90092-C  0.394
1989 Ruzyllo J, Hoff AM, Frystak DC, Hossain SD. Electrical Evaluation of Wet and Dry Cleaning Procedures for Silicon Device Fabrication Journal of the Electrochemical Society. 136: 1474-1476. DOI: 10.1149/1.2096944  0.329
1988 Hoff AM, Ruzyllo J. Atomic oxygen and the thermal oxidation of silicon Applied Physics Letters. 52: 1264-1265. DOI: 10.1063/1.99676  0.318
1987 Ruzyllo J, Duranko GT, Hoff AM. Preoxidation UV Treatment of Silicon Wafers Journal of the Electrochemical Society. 134: 2052-2055. DOI: 10.1149/1.2100818  0.318
1987 Ruzyllo J, Hoff A, Ruggles G. Evaluation of thin oxides grown by the atomic oxygen afterglow method Journal of Electronic Materials. 16: 373-378. DOI: 10.1007/Bf02657913  0.375
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