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Brian Skromme - Publications

Affiliations: 
Arizona State University, Tempe, AZ, United States 
Area:
Materials Science Engineering, Optics Physics
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12 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2007 Wang Y, Losee PA, Balachandran S, Bhat IB, Chow TP, Skromme BJ, Kim JK, Schubert EF. Achieving low sheet resistance from implanted P-type layers in 4H-SiC using high temperature graphite capped annealing Materials Science Forum. 556: 567-570. DOI: 10.4028/Www.Scientific.Net/Msf.556-557.567  0.359
2006 Wang Y, Mikhov MK, Skromme B. Formation and Properties of Schottky Diodes on 4H-SiC after High Temperature Annealing with Graphite Encapsulation Materials Science Forum. 915-918. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.915  0.69
2006 Wang Y, Chen L, Mikhov MK, Samson G, Skromme B. Characterization of Stacking Fault-Induced Behavior in 4H-SiC p-i-n Diodes Materials Science Forum. 363-366. DOI: 10.4028/Www.Scientific.Net/Msf.527-529.363  0.679
2005 Bai J, Huang X, Dudley M, Wagner B, Davis RF, Wu L, Sutter E, Zhu Y, Skromme B. Intersecting basal plane and prismatic stacking fault structures and their formation mechanisms in GaN Journal of Applied Physics. 98: 63510. DOI: 10.1063/1.2039278  0.406
2005 Park K, Ding Y, Pelz JP, Mikhov MK, Wang Y, Skromme BJ. Effect of inclined quantum wells on macroscopic capacitance-voltage response of Schottky contacts: Cubic inclusions in hexagonal SiC Applied Physics Letters. 86: 222109. DOI: 10.1063/1.1935757  0.678
2005 Bai J, Dudley M, Chen L, Skromme B, Wagner B, Davis RF, Chowdhury U, Dupuis RD. Structural defects and luminescence features in heteroepitaxial GaN grown on on-axis and misoriented substrates Journal of Applied Physics. 97: 116101. DOI: 10.1063/1.1914956  0.434
2005 Wang Y, Ali GN, Mikhov MK, Vaidyanathan V, Skromme BJ, Raghothamachar B, Dudley M. Correlation between morphological defects, electron beam-induced current imaging, and the electrical properties of 4H-SiC Schottky diodes Journal of Applied Physics. 97. DOI: 10.1063/1.1829784  0.693
2004 Ding Y, Park K, Pelz JP, Palle KC, Mikhov MK, Skromme BJ, Meidia H, Mahajan S. Cubic inclusions in 4H-SiC studied with ballistic electron-emission microscopy Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 22: 1351-1355. DOI: 10.1116/1.1705644  0.695
2004 Chen L, Skromme BJ, Dalmau RF, Schlesser R, Sitar Z, Chen C, Sun W, Yang J, Khan MA, Nakarmi ML, Lin JY, Jiang HX. Band edge exciton states in AlN single crystals and epitaxial layers Applied Physics Letters. 85: 4334-4336. DOI: 10.1063/1.1818733  0.319
2004 Bai J, Dudley M, Raghothamachar B, Gouma P, Skromme BJ, Chen L, Hartlieb PJ, Michaels E, Kolis JW. Correlated structural and optical characterization of ammonothermally grown bulk GaN Applied Physics Letters. 84: 3289-3291. DOI: 10.1063/1.1715154  0.447
2000 Skromme B, Luckowski E, Moore K, Clemens S, Resnick D, Gehoski T, Ganser D. Fermi Level Pinning and Schottky Barrier Characteristics on Reactively Ion Etched 4H-SiC Materials Science Forum. 1029-1032. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1029  0.33
1995 Chen J, Zhang Y, Skromme B, Akimoto K, Pachuta SJ. Properties of the shallow O‐related acceptor level in ZnSe Journal of Applied Physics. 78: 5109-5119. DOI: 10.1063/1.360739  0.339
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