Year |
Citation |
Score |
2017 |
Boffard JB, Lin CC, Wendt AE. Application of Excitation Cross-Section Measurements to Optical Plasma Diagnostics Advances in Atomic Molecular and Optical Physics. 67: 1-76. DOI: 10.1016/Bs.Aamop.2017.03.005 |
0.516 |
|
2015 |
Boffard JB, Lin CC, Wang S, Wendt AE, Culver C, Radovanov S, Persing H. Comparison of surface vacuum ultraviolet emissions with resonance level number densities. II. Rare-gas plasmas and Ar-molecular gas mixtures Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 33. DOI: 10.1116/1.4904036 |
0.43 |
|
2015 |
Boffard JB, Wang S, Lin CC, Wendt AE. Detection of fast electrons in pulsed argon inductively-coupled plasmas using the 420.1–419.8 nm emission line pair Plasma Sources Science and Technology. 24: 65005. DOI: 10.1088/0963-0252/24/6/065005 |
0.416 |
|
2014 |
Boffard JB, Lin CC, Culver C, Wang S, Wendt AE, Radovanov S, Persing H. Comparison of surface vacuum ultraviolet emissions with resonance level number densities. I. Argon plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4859376 |
0.39 |
|
2013 |
Wang S, Wendt AE, Boffard JB, Lin CC, Radovanov S, Persing H. Noninvasive, real-time measurements of plasma parameters via optical emission spectroscopy Journal of Vacuum Science and Technology. 31: 21303. DOI: 10.1116/1.4792671 |
0.424 |
|
2012 |
Boffard JB, Jung RO, Lin CC, Aneskavich LE, Wendt AE. Argon 420.1–419.8 nm emission line ratio for measuring plasma effective electron temperatures Journal of Physics D: Applied Physics. 45: 045201. DOI: 10.1088/0022-3727/45/4/045201 |
0.39 |
|
2012 |
Boffard JB, Jung RO, Lin CC, Aneskavich LE, Wendt AE. Evidence of weak plasma series resonance heating in the H-mode of neon and neon/argon inductively coupled plasmas Journal of Physics D. 45: 382001. DOI: 10.1088/0022-3727/45/38/382001 |
0.503 |
|
2011 |
Chen F, Jiang H, Kiefer AM, Clausen AM, Ting YH, Wendt AE, Ding B, Lagally MG. Fabrication of ultrahigh-density nanowires by electrochemical nanolithography. Nanoscale Research Letters. 6: 444. PMID 21745363 DOI: 10.1186/1556-276X-6-444 |
0.357 |
|
2011 |
Boffard JB, Jung RO, Lin CC, Aneskavich LE, Wendt AE. Optical diagnostics for characterization of electron energy distributions: argon inductively coupled plasmas Plasma Sources Science and Technology. 20: 055006. DOI: 10.1088/0963-0252/20/5/055006 |
0.397 |
|
2010 |
Ting YH, Liu CC, Park SM, Jiang H, Nealey PF, Wendt AE. Surface roughening of polystyrene and poly(methyl methacrylate) in Ar/O2 plasma etching Polymers. 2: 649-663. DOI: 10.3390/Polym2040649 |
0.48 |
|
2010 |
Qin XV, Ting Y, Wendt AE. Tailored ion energy distributions at an rf-biased plasma electrode Plasma Sources Science and Technology. 19: 065014. DOI: 10.1088/0963-0252/19/6/065014 |
0.655 |
|
2010 |
Boffard JB, Jung RO, Lin CC, Wendt AE. Optical emission measurements of electron energy distributions in low-pressure argon inductively coupled plasmas Plasma Sources Science and Technology. 19: 65001. DOI: 10.1088/0963-0252/19/6/065001 |
0.471 |
|
2009 |
Ding R, Klein LJ, Friesen MG, Eriksson MA, Wendt AE. Sidewall damage in plasma etching of Si/SiGe heterostructures Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 27: 836-843. DOI: 10.1116/1.3097858 |
0.403 |
|
2009 |
Boffard JB, Jung RO, Lin CC, Wendt AE. Measurement of metastable and resonance level densities in rare-gas plasmas by optical emission spectroscopy Plasma Sources Science and Technology. 18: 35017. DOI: 10.1088/0963-0252/18/3/035017 |
0.387 |
|
2009 |
Buzzi FL, Ting Y, Wendt AE. Energy distribution of bombarding ions in plasma etching of dielectrics Plasma Sources Science and Technology. 18: 025009. DOI: 10.1088/0963-0252/18/2/025009 |
0.652 |
|
2008 |
Ting YH, Park SM, Liu CC, Liu X, Himpsel FJ, Nealey PF, Wendt AE. Plasma etch removal of poly(methyl methacrylate) in block copolymer lithography Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1684-1689. DOI: 10.1116/1.2966433 |
0.349 |
|
2007 |
Silapunt R, Wendt AE, Kirmse KHR. Ion energy control at substrates during plasma etching of patterned structures Journal of Vacuum Science & Technology B. 25: 1882-1887. DOI: 10.1116/1.2803723 |
0.549 |
|
2007 |
Liu CC, Nealey PF, Ting YH, Wendt AE. Pattern transfer using poly(styrene-block-methyl methacrylate) copolymer films and reactive ion etching Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1963-1968. DOI: 10.1116/1.2801884 |
0.428 |
|
2007 |
Ding R, Klein LJ, Eriksson MA, Wendt AE. Anisotropic fluorocarbon plasma etching of Si/SiGe heterostruetures Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 404-409. DOI: 10.1116/1.2712199 |
0.374 |
|
2007 |
Patterson MM, Chu HY, Wendt AE. Arbitrary substrate voltage wave forms for manipulating energy distribution of bombarding ions during plasma processing Plasma Sources Science and Technology. 16: 257-264. DOI: 10.1088/0963-0252/16/2/007 |
0.423 |
|
2004 |
Silapunt R, Wendt AE, Kirmse K, Losey LP. Ion bombardment energy control for selective fluorocarbon plasma etching of organosilicate glass Journal of Vacuum Science & Technology B. 22: 826-831. DOI: 10.1116/1.1676641 |
0.662 |
|
2003 |
Wilson CG, Gianchandani YB, Wendt AE. High-voltage constraints for vacuum packaged microstructures Journal of Microelectromechanical Systems. 12: 835-839. DOI: 10.1109/Jmems.2003.820278 |
0.337 |
|
2003 |
Wilson CG, Gianchandani YB, Arslanbekov RR, Kolobov V, Wendt AE. Profiling and modeling of dc nitrogen microplasmas Journal of Applied Physics. 94: 2845-2851. DOI: 10.1063/1.1595143 |
0.427 |
|
2001 |
Wang SB, Wendt AE. Ion bombardment energy and SiO2/Si fluorocarbon plasma etch selectivity Journal of Vacuum Science and Technology, Part a: Vacuum, Surfaces and Films. 19: 2425-2432. DOI: 10.1116/1.1387056 |
0.581 |
|
2001 |
Wendt AE. Passive external radio frequency filter for Langmuir probes Review of Scientific Instruments. 72: 2926-2930. DOI: 10.1063/1.1376139 |
0.409 |
|
2000 |
Andrew Y, Lu Z, Snodgrass T, Teitzel G, Wendt AE. Interactions between plasmas in ionized physical vapor deposition discharges Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 18: 2137. DOI: 10.1116/1.1286360 |
0.449 |
|
2000 |
Andrew Y, Booske JH, Lu S, Snodgrass TG, Wendt AE. Reduction of effects of rarefaction in ionized physical vapour deposition discharges Plasma Sources Science and Technology. 9: 562-567. DOI: 10.1088/0963-0252/9/4/311 |
0.426 |
|
2000 |
Wang S, Wendt AE. Control of ion energy distribution at substrates during plasma processing Journal of Applied Physics. 88: 643-646. DOI: 10.1063/1.373715 |
0.559 |
|
2000 |
Andrew Y, Abraham I, Booske JH, Lu ZC, Wendt AE. Absolute densities of long lived species in an ionized physical vapor deposition copper-argon plasma Journal of Applied Physics. 88: 3208-3219. DOI: 10.1063/1.1289219 |
0.361 |
|
2000 |
Wendt AE. High-density plasma sources Thin Films. 27: 9-35. DOI: 10.1016/S1079-4050(00)80004-6 |
0.487 |
|
1999 |
Lu ZC, Foster JE, Snodgrass TG, Booske JH, Wendt AE. Measurement of electron energy distribution function in an argon/copper plasma for ionized physical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 17: 840-844. DOI: 10.1116/1.581656 |
0.55 |
|
1999 |
Foster JE, Wendt AE, Wang WW, Booske JH. Erratum: “Determination of metal vapor ion concentration in an argon/copper plasma for ionized physical vapor deposition” [J. Vac. Sci. Technol. A 16, 2198 (1998)] Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 17: 322-322. DOI: 10.1116/1.581589 |
0.479 |
|
1999 |
Wang SB, Wendt AE. Sheath thickness evaluation for collisionless or weakly collisional bounded plasmas Ieee Transactions On Plasma Science. 27: 1358-1365. DOI: 10.1109/27.799813 |
0.388 |
|
1999 |
Wang W, Foster J, Snodgrass T, Wendt AE, Booske JH. An rf sustained argon and copper plasma for ionized physical vapor deposition of copper Journal of Applied Physics. 85: 7556-7561. DOI: 10.1063/1.370554 |
0.493 |
|
1999 |
Snodgrass TG, Booske JH, Wang W, Wendt AE, Shohet JL. Gridless ionized metal flux fraction measurement tool for use in ionized physical vapor deposition studies Review of Scientific Instruments. 70: 1525-1529. DOI: 10.1063/1.1149618 |
0.456 |
|
1998 |
Foster JE, Wendt AE, Wang WW, Booske JH. Determination of metal vapor ion concentration in an argon/copper plasma for ionized physical vapor deposition Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 16: 2198-2203. DOI: 10.1116/1.581512 |
0.579 |
|
1997 |
Wang W, Foster J, Wendt AE, Booske JH, Onuoha T, Sandstrom PW, Liu HL, Gearhart SS, Hershkowitz N. Magnetic-field-enhanced rf argon plasma for ionized sputtering of copper Applied Physics Letters. 71: 1622-1624. DOI: 10.1063/1.119997 |
0.478 |
|
1996 |
Kirmse KHR, Wendt AE, Disch SB, Wu JZ, Abraham IC, Meyer JA, Breun RA, Woods RC. SiO2 to Si selectivity mechanisms in high density fluorocarbon plasma etching Journal of Vacuum Science & Technology B. 14: 710-715. DOI: 10.1116/1.588702 |
0.494 |
|
1996 |
Stittsworth JA, Wendt AE. Striations in a radio frequency planar inductively coupled plasma Ieee Transactions On Plasma Science. 24: 125-126. DOI: 10.1109/27.491744 |
0.334 |
|
1996 |
Stittsworth JA, Wendt AE. Reactor geometry and plasma uniformity in a planar inductively coupled radio frequency argon discharge Plasma Sources Science and Technology. 5: 429-435. DOI: 10.1088/0963-0252/5/3/011 |
0.402 |
|
1996 |
Meyer JA, Mau R, Wendt AE. Plasma properties determined with induction loop probes in a planar inductively coupled plasma source Journal of Applied Physics. 79: 1298-1302. DOI: 10.1063/1.361025 |
0.431 |
|
1995 |
Meyer JA, Wendt AE. Measurements of electromagnetic fields in a planar radio-frequency inductively coupled plasma source Journal of Applied Physics. 78: 90-96. DOI: 10.1063/1.360585 |
0.326 |
|
1995 |
Cielaszyk ES, Kirmse KHR, Stewart RA, Wendt AE. Mechanisms for polycrystalline silicon defect passivation by hydrogenation in an electron cyclotron resonance plasma Applied Physics Letters. 67: 3099-3101. DOI: 10.1063/1.114877 |
0.484 |
|
1994 |
Kirmse KHR, Oehrlein GS, Wendt AE, Zhang Y. Fluorocarbon high density plasmas. VIII. Study of the ion flux composition at the substrate in electron cyclotron resonance etching processes using fluorocarbon gases Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 12: 1287-1292. DOI: 10.1116/1.579310 |
0.559 |
|
1994 |
Beale DF, Wendt AE, Mahoney LJ. Spatially resolved optical emission for characterization of a planar radio frequency inductively coupled discharge Journal of Vacuum Science and Technology. 12: 2775-2779. DOI: 10.1116/1.579103 |
0.382 |
|
1994 |
Mahoney LJ, Wendt AE, Barrios E, Richards CJ, Shohet JL. Electron-density and energy distributions in a planar inductively coupled discharge Journal of Applied Physics. 76: 2041-2047. DOI: 10.1063/1.357672 |
0.483 |
|
1994 |
Kolobov VI, Beale DF, Mahoney LJ, Wendt AE. Nonlocal electron kinetics in a low‐pressure inductively coupled radio‐frequency discharge Applied Physics Letters. 65: 537-539. DOI: 10.1063/1.112290 |
0.363 |
|
1994 |
Meyer JA, Kirmse KHR, Jenq JS, Perez-Montero SY, Maynard HL, Wendt AE, Taylor JW, Hershkowitz N. Experiments with back side gas cooling using an electrostatic wafer holder in an electron cyclotron resonance etching tool Applied Physics Letters. 64: 1926-1928. DOI: 10.1063/1.111744 |
0.357 |
|
1993 |
Lai C, Breun RA, Sandstrom PW, Wendt AE, Woods RC, Hershkowitz N. Langmuir Probe Measurements of Electron Temperature and Density Scaling in Multidipoie Radio Frequency Plasmas Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 1199-1205. DOI: 10.1116/1.578493 |
0.485 |
|
1992 |
Wendt AE, Hitchon WNG. Electron heating by sheaths in radio frequency discharges Journal of Applied Physics. 71: 4718-4726. DOI: 10.1063/1.350662 |
0.423 |
|
1991 |
Friedmann JB, Shohet JL, Wendt AE. Ion-Cyclotron-Resonance Mass Spectrometry with a Microwave Plasma Source Ieee Transactions On Plasma Science. 19: 47-51. DOI: 10.1109/27.62366 |
0.433 |
|
1990 |
Wendt AE, Lieberman MA. Spatial structure of a planar magnetron discharge Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 902-907. DOI: 10.1116/1.576894 |
0.301 |
|
1988 |
Wendt AE, Lieberman MA, Meuth H. Radial current distribution at a planar magnetron cathode Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1827-1831. DOI: 10.1116/1.575263 |
0.349 |
|
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