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Konstantinos P. Giapis - Publications

Affiliations: 
California Institute of Technology, Pasadena, CA 
Area:
Chemical Engineering, Fluid and Plasma Physics, Materials Science Engineering
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55 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Yao Y, Shushkov P, Miller TF, Giapis KP. Direct dioxygen evolution in collisions of carbon dioxide with surfaces. Nature Communications. 10: 2294. PMID 31127109 DOI: 10.1038/S41467-019-10342-6  0.336
2017 Yao Y, Giapis KP. Intramolecular water-splitting reaction in single collisions of water ions with surfaces. Chemical Science. 8: 2852-2858. PMID 28553523 DOI: 10.1039/C6Sc05065D  0.325
2016 Yao Y, Giapis KP. Dynamic nitroxyl formation in the ammonia oxidation on platinum via Eley-Rideal reactions. Physical Chemistry Chemical Physics : Pccp. PMID 27759137 DOI: 10.1039/C6Cp06533C  0.317
2016 Yao Y, Giapis KP. Direct Hydrogenation of Dinitrogen and Dioxygen via Eley-Rideal Reactions. Angewandte Chemie (International Ed. in English). PMID 27534611 DOI: 10.1002/Anie.201604899  0.302
2016 Giapis K, Yao Y. Tuning Charge Transfer in Ion-Surface Collisions at Hyperthermal Energies. Chemphyschem : a European Journal of Chemical Physics and Physical Chemistry. PMID 26879471 DOI: 10.1002/Cphc.201600045  0.394
2013 Brunelli NA, Neidholdt EL, Giapis KP, Flagan RC, Beauchamp JL. Continuous flow ion mobility separation with mass spectrometric detection using a nano-radial differential mobility analyzer at low flow rates. Analytical Chemistry. 85: 4335-41. PMID 23544674 DOI: 10.1021/Ac3032417  0.333
2012 Zhang X, Hu M, Giapis KP, Poulikakos D. Schemes for and Mechanisms of Reduction in Thermal Conductivity in Nanostructured Thermoelectrics Journal of Heat Transfer. 134. DOI: 10.1115/1.4006750  0.331
2011 Hu M, Giapis KP, Poulikakos D. Interfacial mixing during annealing of zinc oxide nanoparticle junctions Applied Physics Letters. 98: 211904. DOI: 10.1063/1.3593487  0.302
2009 Gordon MJ, Qin X, Kutana A, Giapis KP. Gas-surface chemical reactions at high collision energies? Journal of the American Chemical Society. 131: 1927-30. PMID 19191705 DOI: 10.1021/Ja807672N  0.532
2009 Brunelli NA, Flagan RC, Giapis KP. Radial Differential Mobility Analyzer for One Nanometer Particle Classification Aerosol Science and Technology. 43: 53-59. DOI: 10.1080/02786820802464302  0.324
2009 Narui Y, Ceres DM, Chen J, Giapis KP, Collier CP. High aspect ratio silicon dioxide-coated single-walled carbon nanotube scanning probe nanoelectrodes Journal of Physical Chemistry C. 113: 6815-6820. DOI: 10.1021/Jp901080E  0.34
2006 Mace J, Gordon MJ, Giapis KP. Evidence of simultaneous double-electron promotion in F+ collisions with surfaces. Physical Review Letters. 97: 257603. PMID 17280394 DOI: 10.1103/Physrevlett.97.257603  0.499
2006 Kutana A, Gordon M, Giapis K. Neutralization of hyperthermal Ne+ on metal surfaces Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions With Materials and Atoms. 248: 16-20. DOI: 10.1016/J.Nimb.2006.03.187  0.58
2005 Sankaran RM, Holunga D, Flagan RC, Giapis KP. Synthesis of blue luminescent si nanoparticles using atmospheric-pressure microdischarges. Nano Letters. 5: 537-41. PMID 15755110 DOI: 10.1021/Nl0480060  0.693
2005 Gordon MJ, Mace J, Giapis KP. Charge-exchange mechanisms at the threshold for inelasticity inNe+collisions with surfaces Physical Review A. 72. DOI: 10.1103/Physreva.72.012904  0.372
2005 Gordon MJ, Giapis KP. Low-energy ion beamline scattering apparatus for surface science investigations Review of Scientific Instruments. 76: 083302. DOI: 10.1063/1.1994987  0.581
2003 Sankaran RM, Giapis KP. High-pressure micro-discharges in etching and deposition applications Journal of Physics D: Applied Physics. 36: 2914-2921. DOI: 10.1088/0022-3727/36/23/008  0.352
2002 Sankaran RM, Giapis KP. Hollow cathode sustained plasma microjets: Characterization and application to diamond deposition Journal of Applied Physics. 92: 2406-2411. DOI: 10.1063/1.1497719  0.34
2002 Giapis KP, Hwang GS, Joubert O. The role of mask charging in profile evolution and gate oxide degradation Microelectronic Engineering. 61: 835-847. DOI: 10.1016/S0167-9317(02)00459-8  0.585
2001 Sankaran RM, Giapis KP. Maskless etching of silicon using patterned microdischarges Applied Physics Letters. 79: 593-595. DOI: 10.1063/1.1388867  0.354
2000 Giapis K, Hwang G. Plasma interactions with high aspect ratio patterned surfaces: ion transport, scattering, and the role of charging Thin Solid Films. 374: 175-180. DOI: 10.1016/S0040-6090(00)01149-4  0.576
1999 Hwang GS, Giapis KP. Role of film conformality in charging damage during plasma-assisted interlevel dielectric deposition Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 17: 999. DOI: 10.1116/1.590683  0.565
1999 Hwang G, Giapis K. Pattern-dependent charging in plasmas Ieee Transactions On Plasma Science. 27: 102-103. DOI: 10.1109/27.763065  0.574
1999 Hwang GS, Giapis KP. Charging damage during residual metal overetching Applied Physics Letters. 74: 932-934. DOI: 10.1063/1.123413  0.587
1998 Hwang GS, Giapis KP. Mechanism of Charging Reduction in Pulsed Plasma Etching Japanese Journal of Applied Physics. 37: 2291-2301. DOI: 10.1143/Jjap.37.2291  0.593
1998 Giapis KP, Hwang GS. Pattern-Dependent Charging and the Role of Electron Tunneling Japanese Journal of Applied Physics. 37: 2281-2290. DOI: 10.1143/Jjap.37.2281  0.59
1998 Hwang GS, Giapis KP. The influence of surface currents on pattern-dependent charging and notching Journal of Applied Physics. 84: 683-689. DOI: 10.1063/1.368123  0.582
1998 Hwang GS, Giapis KP. Modeling of charging damage during interlevel oxide deposition in high-density plasmas Journal of Applied Physics. 84: 154-160. DOI: 10.1063/1.368012  0.564
1997 Hwang GS, Giapis KP. The Role of the Substrate on Pattern‐Dependent Charging Journal of the Electrochemical Society. 144: L320-L322. DOI: 10.1149/1.1838146  0.556
1997 Hwang GS, Giapis KP. On the Origin of Charging Damage during Etching of Antenna Structures Journal of the Electrochemical Society. 144: L285-L287. DOI: 10.1149/1.1838011  0.554
1997 Hwang GS, Giapis KP. Pattern-Dependent Charging in Plasmas: Electron Temperature Effects Physical Review Letters. 79: 845-848. DOI: 10.1103/Physrevlett.79.845  0.585
1997 Hwang GS, Giapis KP. The influence of mask thickness on charging damage during overetching Journal of Applied Physics. 82: 572-577. DOI: 10.1063/1.365617  0.587
1997 Hwang GS, Giapis KP. Aspect-ratio-dependent charging in high-density plasmas Journal of Applied Physics. 82: 566-571. DOI: 10.1063/1.365616  0.59
1997 Hwang GS, Giapis KP. The influence of electron temperature on pattern-dependent charging during etching in high-density plasmas Journal of Applied Physics. 81: 3433-3439. DOI: 10.1063/1.365039  0.6
1997 Hwang GS, Giapis KP. How tunneling currents reduce plasma-induced charging Applied Physics Letters. 71: 2928-2930. DOI: 10.1063/1.120218  0.588
1997 Hwang GS, Giapis KP. Simulation of current transients through ultrathin gate oxides during plasma etching Applied Physics Letters. 71: 1945-1947. DOI: 10.1063/1.119989  0.559
1997 Hwang GS, Giapis KP. Ion mass effect in plasma-induced charging Applied Physics Letters. 71: 1942-1944. DOI: 10.1063/1.119988  0.544
1997 Hwang GS, Giapis KP. Aspect ratio independent etching of dielectrics Applied Physics Letters. 71: 458-460. DOI: 10.1063/1.119578  0.585
1997 Hwang GS, Giapis KP. Prediction of multiple-feature effects in plasma etching Applied Physics Letters. 70: 2377-2379. DOI: 10.1063/1.118878  0.51
1997 Minton TK, Giapis KP, Moore T. Inelastic scattering dynamics of hyperthermal fluorine atoms on a fluorinated silicon surface Journal of Physical Chemistry A. 101: 6549-6555. DOI: 10.1021/Jp970767M  0.324
1996 Hwang GS, Anderson CM, Gordon J, Moore TA, Minton TK, Giapis KP. Gas-Surface Dynamics and Profile Evolution during Etching of Silicon. Physical Review Letters. 77: 3049-3052. PMID 10062118 DOI: 10.1103/Physrevlett.77.3049  0.521
1995 Giapis KP, Moore TA, Minton TK. Hyperthermal neutral beam etching Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 13: 959-965. DOI: 10.1116/1.579658  0.349
1994 Skromme B, Liu W, Jensen K, Giapis K. Effects of C incorporation on the luminescence properties of ZnSe grown by metalorganic chemical vapor deposition Journal of Crystal Growth. 138: 338-345. DOI: 10.1016/0022-0248(94)90830-3  0.369
1993 Giapis KP, Sadeghi N, Margot J, Gottscho RA, Lee TCJ. Limits to ion energy control in high density glow discharges: Measurement of absolute metastable ion concentrations Journal of Applied Physics. 73: 7188-7194. DOI: 10.1063/1.352391  0.406
1991 Giapis KP, Gottscho RA, Clark LA, Kruskal JB, Lambert D, Kornblit A, Sinatore D. Use of light scattering in characterizing reactively ion etched profiles Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 9: 664-668. DOI: 10.1116/1.577386  0.32
1991 Patnaik S, Jensen KF, Giapis KP. MOVPE of ZnSe using organometallic allyl selenium precursors Journal of Crystal Growth. 107: 390-395. DOI: 10.1016/0022-0248(91)90492-N  0.33
1990 Gottscho RA, Preppernau BL, Pearton SJ, Emerson AB, Giapis KP. Real‐time monitoring of low‐temperature hydrogen plasma passivation of GaAs Journal of Applied Physics. 68: 440-445. DOI: 10.1063/1.346813  0.327
1990 Giapis KP, Scheller GR, Gottscho RA, Hobson WS, Lee YH. Microscopic and macroscopic uniformity control in plasma etching Applied Physics Letters. 57: 983-985. DOI: 10.1063/1.103532  0.359
1990 Giapis KP, Jensen KF. Effect of operating conditions and precursors on optoelectronic properties of OMVPE grown ZnSe Journal of Crystal Growth. 101: 111-117. DOI: 10.1016/0022-0248(90)90947-J  0.332
1990 Giapis KP, Lu D, Jensen KF, Potts JE. Temperature variations in electrical and photoluminescence properties of ZnSe grown by MOCVD Journal of Crystal Growth. 104: 291-296. DOI: 10.1016/0022-0248(90)90129-9  0.369
1990 Giapis KP, Lu D, Fotiadis DI, Jensen KF. A new reactor system for MOCVD of ZaSe: Modelling and experimental results for growth from dimethylzinc and diethylselenide Journal of Crystal Growth. 104: 629-640. DOI: 10.1016/0022-0248(90)90006-7  0.337
1990 Giapis KP, Jensen KF, Potts JE, Pachuta SJ. Investigation of carbon incorporation in znse: Effects on morphology, electrical, and photoluminescence properties Journal of Electronic Materials. 19: 453-462. DOI: 10.1007/BF02658006  0.376
1989 Giapis KP, Jensen KF, Potts JE, Pachuta SJ. Carbon incorporation in ZnSe grown by metalorganic chemical vapor deposition Applied Physics Letters. 55: 463-465. DOI: 10.1063/1.101853  0.452
1989 Giapis KP, Lu D, Jensen KF. High quality epitaxial ZnSe and the relationship between electron mobility and photoluminescence characteristics Applied Physics Letters. 54: 353-355. DOI: 10.1063/1.100967  0.464
1988 Giapis KP, Da-Cheng L, Jensen KF. Effects of the Selenium Precursor on the Growth of ZnSe by Metalorganic Chemical Vapor Deposition Mrs Proceedings. 131. DOI: 10.1557/PROC-131-63  0.402
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