| Year |
Citation |
Score |
| 2007 |
Herrera-Gomez A, Woicik JC, Kendelewicz T, Miyano KE, Spicer WE. X-ray standing wave analysis of overlayer-induced substrate relaxation: The clean and Bi-covered (110) GaP surface Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.165318 |
0.384 |
|
| 2005 |
Sun Y, Liu Z, MacHuca F, Pianetta P, Spicer WE. Optimized cleaning method for producing device quality InP(100) surfaces Journal of Applied Physics. 97. DOI: 10.1063/1.1935745 |
0.467 |
|
| 2004 |
Liu Z, Machuca F, Pianetta P, Spicer WE, Pease RFW. Electron scattering study within the depletion region of the GaN(0001) and the GaAs(100) surface Applied Physics Letters. 85: 1541-1543. DOI: 10.1063/1.1785865 |
0.469 |
|
| 2003 |
Liu Z, Sun Y, Machuca F, Pianetta P, Spicer WE, Pease RFW. Optimization and characterization of III-V surface cleaning Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1953-1958. DOI: 10.1116/1.1593644 |
0.515 |
|
| 2003 |
Machuca F, Liu Z, Sun Y, Pianetta P, Spicer WE, Pease RFW. Oxygen species in Cs/O activated gallium nitride (GaN) negative electron affinity photocathodes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 1863-1869. DOI: 10.1116/1.1589512 |
0.462 |
|
| 2003 |
Sun Y, Liu Z, Machuca F, Pianetta P, Spicer WE. Preparation of clean InP(100) surfaces studied by synchrotron radiation photoemission Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21: 219-225. DOI: 10.1116/1.1532738 |
0.501 |
|
| 2003 |
Liu Z, Sun Y, Machuca F, Pianetta P, Spicer WE, Pease RFW. Preparation of clean GaAs(100) studied by synchrotron radiation photoemission Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 21: 212-218. DOI: 10.1116/1.1532737 |
0.475 |
|
| 2002 |
Machuca F, Liu Z, Sun Y, Pianetta P, Spicer WE, Pease RFW. Role of oxygen in semiconductor negative electron affinity photocathodes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2721-2725. DOI: 10.1116/1.1521742 |
0.449 |
|
| 2002 |
Machuca F, Liu Z, Sun Y, Pianetta P, Spicer WE, Pease RFW. Simple method for cleaning gallium nitride (0001) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 20: 1784-1786. DOI: 10.1116/1.1503782 |
0.477 |
|
| 2001 |
Herrera-Gómez A, Aguirre-Tostado FS, Sun Y, Pianetta P, Yu Z, Marshall D, Droopad R, Spicer WE. Photoemission from the Sr/Si(001) interface Journal of Applied Physics. 90: 6070-6072. DOI: 10.1063/1.1415758 |
0.402 |
|
| 1999 |
Herrera-Gómez A, Rousseau PM, Woicik JC, Kendelewicz T, Plummer J, Spicer WE. Lattice compression of Si crystals and crystallographic position of As impurities measured with x-ray standing wave spectroscopy Journal of Applied Physics. 85: 1429-1437. DOI: 10.1063/1.369274 |
0.336 |
|
| 1999 |
Vergara G, Herrera-Gómez A, Spicer WE. Calculated electron energy distribution of negative electron affinity cathodes Surface Science. 436: 83-90. DOI: 10.1016/S0039-6028(99)00612-3 |
0.407 |
|
| 1998 |
Spicer WE. The electronic structure of crystalline solids and photoemission spectroscopy: From Einstein to high temperature superconductors Journal of Physics and Chemistry of Solids. 59: 527-552. DOI: 10.1016/S0022-3697(97)90206-6 |
0.362 |
|
| 1996 |
Marshall DS, Dessau DS, Loeser AG, Park CH, Matsuura AY, Eckstein JN, Bozovic I, Fournier P, Kapitulnik A, Spicer WE, Shen Z. Unconventional electronic structure evolution with hole doping in Bi2Sr2CaCu2O8+ delta : Angle-resolved photoemission results. Physical Review Letters. 76: 4841-4844. PMID 10061394 DOI: 10.1103/Physrevlett.76.4841 |
0.69 |
|
| 1995 |
Shen ZX, Spicer WE, King DM, Dessau DS, Wells BO. Photoemission studies of high-tc superconductors: the superconducting gap. Science (New York, N.Y.). 267: 343-50. PMID 17837480 DOI: 10.1126/Science.267.5196.343 |
0.772 |
|
| 1995 |
Marshall DS, Dessau DS, King DM, Park C, Matsuura AY, Shen Z, Spicer WE, Eckstein JN, Bozovic I. Angle-resolved photoemission spectroscopy study of Bi2Sr2CaCu2O8+ delta thin films. Physical Review. B, Condensed Matter. 52: 12548-12551. PMID 9980411 DOI: 10.1103/Physrevb.52.12548 |
0.622 |
|
| 1994 |
King DM, Shen Z, Dessau DS, Marshall DS, Park CH, Spicer WE, Peng JL, Li ZY, Greene RL. Observation of a saddle-point singularity in Bi2(Sr0.97Pr0.03)2CuO6+ delta and its implications for normal and superconducting state properties. Physical Review Letters. 73: 3298-3301. PMID 10057341 DOI: 10.1103/Physrevlett.73.3298 |
0.642 |
|
| 1994 |
Herrera-Gómez A, Kendelewicz T, Woicik JC, Miyano KE, Pianetta P, Southworth S, Cowan PL, Karlin A, Spicer WE. Geometrical structure of the Bi/GaP (110) interface: An x-ray standing wave triangulation study of a nonideal system Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 12: 2473-2477. DOI: 10.1116/1.579196 |
0.352 |
|
| 1994 |
Green AM, Kim C, Spicer WE, Cao R, Pianetta P. CaF2 overlayers to preserve the ideal termination of Sb/GaAs(110) overlayers to preserve the ideal termination of Sb/GaAs(110) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 12: 1158-1169. DOI: 10.1116/1.579184 |
0.381 |
|
| 1994 |
Kendelewicz T, Woicik JC, Miyano KE, Yoshikawa SA, Spicer WE, Panetta P. Structural study of monolayers of Sb on Ge(111) with different surface reconstructions Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 12: 1843-1847. DOI: 10.1116/1.579015 |
0.385 |
|
| 1994 |
Loeser AG, Shen ZX, Dessau DS, Spicer WE. Photoemission studies of the BiSrCaCuO valence band Journal of Electron Spectroscopy and Related Phenomena. 66: 359-385. DOI: 10.1016/0368-2048(93)01858-C |
0.739 |
|
| 1993 |
Woicik JC, Kendelewicz T, Herrera-Gomez A, Miyano KE, Cowan PL, Bouldin CE, Pianetta P, Spicer WE. In/Si(111)- sqrt 3 x sqrt 3 interface: An unrelaxed T4 geometry. Physical Review Letters. 71: 1204-1207. PMID 10055476 DOI: 10.1103/Physrevlett.71.1204 |
0.341 |
|
| 1993 |
Dessau DS, Shen Z, King DM, Marshall DS, Lombardo LW, Dickinson PH, Loeser AG, DiCarlo J, Park C, Kapitulnik A, Spicer WE. Key features in the measured band structure of Bi2Sr2CaCu2O8+ delta : Flat bands at EF and Fermi surface nesting. Physical Review Letters. 71: 2781-2784. PMID 10054774 DOI: 10.1103/Physrevlett.71.2781 |
0.694 |
|
| 1993 |
King DM, Shen Z, Dessau DS, Wells BO, Spicer WE, Arko AJ, Marshall DS, DiCarlo J, Loeser AG, Park CH, Ratner ER, Peng JL, Li ZY, Greene RL. Fermi surface and electronic structure of Nd2-xCexCuO4- delta. Physical Review Letters. 70: 3159-3162. PMID 10053790 DOI: 10.1103/Physrevlett.70.3159 |
0.77 |
|
| 1993 |
Shen Z, Dessau DS, Wells BO, King DM, Spicer WE, Arko AJ, Marshall D, Lombardo LW, Kapitulnik A, Dickinson P, Doniach S, DiCarlo J, Loeser T, Park CH. Anomalously large gap anisotropy in the a-b plane of Bi2Sr2CaCu2O8+ delta. Physical Review Letters. 70: 1553-1556. PMID 10053321 DOI: 10.1103/Physrevlett.70.1553 |
0.767 |
|
| 1993 |
Ratner ER, Shen Z, Dessau DS, Wells BO, Marshall DS, King DM, Spicer WE, Peng JL, Li ZY, Greene RL. Photoemission study of single-crystal Bi2Sr1.9Pr0.1CuO6+ delta. Physical Review. B, Condensed Matter. 48: 10482-10486. PMID 10007325 DOI: 10.1103/Physrevb.48.10482 |
0.655 |
|
| 1993 |
Miyano KE, Woicik JC, Kendelewicz T, Spicer WE, Richter M, Pianetta P. Surface extended x-ray-absorption fine-structure study of the (1 monolayer Sb)/GaP(110) interface. Physical Review. B, Condensed Matter. 47: 6444-6449. PMID 10004610 DOI: 10.1103/Physrevb.47.6444 |
0.384 |
|
| 1993 |
Dessau DS, Shen ZX, King DM, Wells BO, Marshall DS, Lombardo LW, Dickinson PH, Dicarlo J, Park CH, Loeser AG, Kapitulnik A, Spicer WE, Arko AJ. High energy resolution arpes measurements of the normal and superconducting states of Bi2Sr2CaCu2O8+δ Materials Research Society Symposium Proceedings. 307: 187-192. DOI: 10.1557/Proc-307-187 |
0.708 |
|
| 1993 |
Kendelewicz T, Woicik JC, Miyano KE, Herrera‐Gomez A, Cowan PL, Pianetta P, Spicer WE. Structure of Sb monolayers on Ge(111)2×1: A combined study using core‐level photoemission, x‐ray standing waves, and surface extended x‐ray absorption fine structure Journal of Vacuum Science & Technology B. 11: 1449-1454. DOI: 10.1116/1.586958 |
0.39 |
|
| 1993 |
Woicik JC, Kendelewicz T, Herrera-Gomez A, Andrews AB, Kim BS, Cowan PL, Miyano KE, Bouldin CE, Karlin BA, Herman GS, Erskine JL, Pianetta P, Spicer WE. Adatom location on the Si(111) 7×7 and Si(111) √3× √3-In surfaces by the x-ray standing wave and photoemission techniques Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 11: 2359-2363. DOI: 10.1116/1.578333 |
0.352 |
|
| 1993 |
Spicer WE. Chapter 10 Defects in Metal/III/V Heterostructures Semiconductors and Semimetals. 38: 449-491. DOI: 10.1016/S0080-8784(08)62806-9 |
0.369 |
|
| 1992 |
Wells BO, Shen ZX, Dessau DS, Spicer WE. Wells et al. reply. Physical Review Letters. 68: 417. PMID 10045890 |
0.573 |
|
| 1992 |
Wells BO, Shen ZX, Dessau DS, Spicer WE, Mitzi DB, Lombardo L, Kapitulnik A, Arko AJ. Evidence for k-dependent, in-plane anisotropy of the superconducting gap in Bi2Sr2CaCu2O8+ delta. Physical Review. B, Condensed Matter. 46: 11830-11834. PMID 10003078 |
0.595 |
|
| 1992 |
Woicik JC, Kendelewicz T, Miyano KE, Richter M, Bouldin CE, Pianetta P, Spicer WE. Extended x-ray-absorption fine-structure determination of bond-length conservation at the clean InP(110) surface. Physical Review. B, Condensed Matter. 46: 9869-9872. PMID 10002816 DOI: 10.1103/Physrevb.46.9869 |
0.347 |
|
| 1992 |
Kendelewicz T, Woicik JC, Miyano KE, Herrera-Gomez A, Cowan PL, Karlin BA, Bouldin CE, Pianetta P, Spicer WE. X-ray standing-wave study of monolayers of Sb on GaAs(110). Physical Review. B, Condensed Matter. 46: 7276-7279. PMID 10002452 DOI: 10.1103/Physrevb.46.7276 |
0.315 |
|
| 1992 |
Miyano KE, Kendelewicz T, Woicik JC, Cowan PL, Bouldin CE, Karlin BA, Pianetta P, Spicer WE. Structural characterization of the (1 monolayer Sb)/GaP(110) interface using x-ray standing waves. Physical Review. B, Condensed Matter. 46: 6869-6874. PMID 10002389 DOI: 10.1103/Physrevb.46.6869 |
0.302 |
|
| 1992 |
Dessau DS, Shen Z, Wells BO, King DM, Spicer WE, Arko AJ, Lombardo LW, Mitzi DB, Kapitulnik A. Nature of the high-binding-energy dip in the low-temperature photoemission spectra of Bi2Sr2CaCu2O8+ delta. Physical Review. B, Condensed Matter. 45: 5095-5098. PMID 10002168 DOI: 10.1103/Physrevb.45.5095 |
0.676 |
|
| 1992 |
Yamada M, Wahi AK, Kendelewicz T, Spicer WE. Fermi-level pinning on ideally terminated InP(110) surfaces. Physical Review. B, Condensed Matter. 45: 3600-3605. PMID 10001940 DOI: 10.1103/Physrevb.45.3600 |
0.356 |
|
| 1992 |
Yamada M, Green AM, Herrera-Gomez A, Kendelewicz T, Spicer WE. Photoemission study of interfacial chemistry at metal-InP(110) interfaces with Sb interlayers. Physical Review. B, Condensed Matter. 45: 13531-13537. PMID 10001441 DOI: 10.1103/Physrevb.45.13531 |
0.333 |
|
| 1992 |
Spindt CJ, Yamada M, Meissner PL, Miyano KE, Kendelewicz T, Herrera-Gomez A, Spicer WE, Arko AJ. Electronic structure and Schottky-barrier formation on GaAs (100) surfaces prepared by thermal desorption of a protective arsenic coating. Physical Review. B, Condensed Matter. 45: 11108-11119. PMID 10001031 DOI: 10.1103/Physrevb.45.11108 |
0.476 |
|
| 1992 |
Lin XW, Liliental-Weber Z, Swider W, McCants T, Newman N, Spicer WE, Washburn J, Weber ER. Electrical and Structural Properties of Ti Contacts on an Atomically Clean N-Type GaAs Surface Mrs Proceedings. 281. DOI: 10.1557/Proc-281-665 |
0.591 |
|
| 1992 |
Green AM, Yamada M, Kendelewicz T, Herrera-Gomez A, Spicer WE. In overlayers on Sb passivated GaAs Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 10: 1918-1922. DOI: 10.1116/1.586158 |
0.345 |
|
| 1992 |
Herrera-Gómez A, Meissner PL, Bravman JC, Spicer WE. Limits on the use of tunneling to describe the Pd-Ge ohmic contact to GaAs Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 1029-1034. DOI: 10.1116/1.578197 |
0.305 |
|
| 1992 |
Woicik JC, Kendelewicz T, Cowan PL, Richter M, Karlin BA, Bouldin CE, Miyano KE, Pianetta P, Spicer WE. Extended x-ray absorption fine structure and x-ray standing wave study of the clean lnP(110) surface relaxation Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 2041-2045. DOI: 10.1116/1.578021 |
0.34 |
|
| 1992 |
Green AM, Yamada M, Wahi AK, Kendelewicz T, Spicer WE. Modification of Schottky barrier heights at lnP(110) interfaces using Sb interlayers Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 10: 1954-1958. DOI: 10.1116/1.578009 |
0.434 |
|
| 1992 |
Yamada M, Spindt CJ, Miyano KE, Meissner PL, Herrera-Gomez A, Kendelewicz T, Spicer WE. Effects of annealing InP(110) surfaces on Schottky barrier heights at Pd/InP(110) interfaces Journal of Applied Physics. 71: 314-317. DOI: 10.1063/1.350708 |
0.394 |
|
| 1992 |
Yamada M, Wahi AK, Kendelewicz T, Spicer WE. Schottky barrier formation on InP(110) passivated with one monolayer of Sb Applied Surface Science. 56: 325-329. DOI: 10.1016/0169-4332(92)90251-R |
0.448 |
|
| 1991 |
Dessau DS, Wells BO, Shen Z, Spicer WE, Arko AJ, List RS, Mitzi DB, Kapitulnik A. Anomalous spectral weight transfer at the superconducting transition of Bi2Sr2CaCu2O8+ delta. Physical Review Letters. 66: 2160-2163. PMID 10043406 DOI: 10.1103/Physrevlett.66.2160 |
0.643 |
|
| 1991 |
Woicik JC, Kendelewicz T, Miyano KE, Cowan PL, Bouldin CE, Karlin BA, Pianetta P, Spicer WE. Determination of the Sb/Si(111) interfacial structure by back-reflection x-ray standing waves and surface extended x-ray-absorption fine structure. Physical Review. B, Condensed Matter. 44: 3475-3478. PMID 9999972 DOI: 10.1103/Physrevb.44.3475 |
0.368 |
|
| 1991 |
Wells BO, Shen Z, Dessau DS, Spicer WE. Reply to "Anomalous enhancement of Bi2Sr2CaCu2O8 Fermi-level states near the O 2s threshold" Physical Review. B, Condensed Matter. 44: 882-883. PMID 9999204 DOI: 10.1103/Physrevb.44.882 |
0.653 |
|
| 1991 |
Woicik JC, Kendelewicz T, Miyano KE, Bouldin CE, Meissner PL, Pianetta P, Spicer WE. Local bonding structure of Sb on Si(111) by surface extended x-ray-absorption fine structure and photoemission. Physical Review. B, Condensed Matter. 43: 4331-4339. PMID 9997786 DOI: 10.1103/Physrevb.43.4331 |
0.398 |
|
| 1991 |
Parmigiani F, Shen ZX, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. O 1s core levels in Bi2Sr2CaCu2O8+ delta single crystals. Physical Review. B, Condensed Matter. 43: 3085-3090. PMID 9997612 DOI: 10.1103/Physrevb.43.3085 |
0.638 |
|
| 1991 |
Miyano KE, King DM, Spindt CJ, Kendelewicz T, Cao R, Yu Z, Lindau I, Spicer WE. Potential-barrier measurements at clustered metal-semiconductor interfaces. Physical Review. B, Condensed Matter. 43: 11806-11814. PMID 9996953 DOI: 10.1103/Physrevb.43.11806 |
0.648 |
|
| 1991 |
Yamada M, Green AM, Herrera-Gomez A, Kendelewicz T, Spicer WE. Annealing out of thermal process-induced defects at inp(110) surfaces—a novel method Japanese Journal of Applied Physics. 30: L1982-L1984. DOI: 10.1143/Jjap.30.L1982 |
0.416 |
|
| 1991 |
Miyano KE, Cao R, Spindt CJ, Kendelewicz T, Lindau I, Spicer WE. Band bending at low-temperature metal/III-V semiconductor interfaces: The overshoot phenomenon Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2100-2107. DOI: 10.1116/1.585782 |
0.661 |
|
| 1991 |
Spindt CJ, Yamada M, Meissner PL, Miyano KE, Herrera A, Spicer WE, Arko AJ. Au and AI Schottky barrier formation on GaAs (100) surfaces prepared by thermal desorption of a protective arsenic coating Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2090-2094. DOI: 10.1116/1.585780 |
0.415 |
|
| 1991 |
Kendelewicz T, Woicik JC, Miyano KE, Cowan PL, Karlin BA, Bouldin CE, Pianetta P, Spicer WE. Synchrotron x-ray standing-wave study of Sb on GaAs(110) and InP(110) Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2290-2293. DOI: 10.1116/1.585735 |
0.315 |
|
| 1991 |
Kendelewicz T, Mivano KE, Meissner PL, Cao R, Spicer WE. Photoemission study of the annealed pd/gaas(110) interface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 9: 990-993. DOI: 10.1116/1.577562 |
0.374 |
|
| 1991 |
Richter M, Woicik JC, Pianetta P, Miyano KE, Bouldin CE, Spicer WE, Lindau I, Kendelewicz T. Surface extended x-ray adsorption fine structure studies of the Si(001) 2X1-Sb interface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 9: 1951-1955. DOI: 10.1116/1.577433 |
0.657 |
|
| 1991 |
Dessau DS, Shen ZX, Wells BO, Spicer WE, List RS, Arko AJ, Bartlett RJ, Olson CG, Mitzi DB, Eom CB, Kapitulnik A, Gebaiie TH. The gold/high temperature superconductor interface; metallicity of the near surface region and a search for the proximity effect Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 9: 383-389. DOI: 10.1116/1.577418 |
0.758 |
|
| 1991 |
Richter M, Woicik JC, Nogami J, Pianetta P, Miyano KE, Baski AA, Kendelewicz T, Bouldin CE, Spicer WE, Quate CF, Lindau I. Erratum: ``Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si(001)2×1-Sb'' [Phys. Rev. Lett. 65, 3417 (1990)] Physical Review Letters. 66: 2836. DOI: 10.1103/Physrevlett.66.2836 |
0.641 |
|
| 1991 |
Parmigiani F, Shen ZX, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. O 1s core levels in Bi2Sr2CaCu2O8+ single crystals Physical Review B. 43: 3085-3090. DOI: 10.1103/PhysRevB.43.3085 |
0.53 |
|
| 1991 |
Miyano KE, King DM, Spindt CJ, Kendelewicz T, Cao R, Yu Z, Lindau I, Spicer WE. Potential-barrier measurements at clustered metal-semiconductor interfaces Physical Review B. 43: 11806-11814. DOI: 10.1103/PhysRevB.43.11806 |
0.56 |
|
| 1991 |
Yamada M, Green AM, Herrera-Gomez A, Kendelewicz T, Spicer WE. Thermal stability of Schottky barriers at Au and Ag/InP(110) interfaces with Sb interlayers Applied Physics Letters. 59: 3121-3123. DOI: 10.1063/1.105758 |
0.374 |
|
| 1991 |
Yamada M, Wahi AK, Meissner PL, Herrera A, Kendelewicz T, Spicer WE. One monolayer of Sb or Bi used as a buffer layer preventing oxidation of InP Applied Physics Letters. 58: 1413-1415. DOI: 10.1063/1.105183 |
0.373 |
|
| 1991 |
Yamada M, Wahi AK, Meissner PL, Herrera-Gomez A, Kendelewicz T, Spicer WE. Effect of annealing Sb/InP(110) interfaces and Schottky barrier formation of Ag on annealed Sb/InP(110) surfaces Applied Physics Letters. 58: 2243-2245. DOI: 10.1063/1.104939 |
0.439 |
|
| 1991 |
Yamada M, Wahi AK, Kendelewicz T, Spicer WE. Large Schottky barrier heights on n-InP-A novel approach Applied Physics Letters. 58: 2701-2703. DOI: 10.1063/1.104788 |
0.434 |
|
| 1991 |
Dessau DS, Wells BO, Shen ZX, Spicer WE, Arko AJ, List RS, Olson CG, Eom CB, Mitzi DB, Kapitulnik A, Geballe TH. Search for a proximity effect induced gap in gold/high Tc junctions Applied Physics Letters. 58: 1332-1334. DOI: 10.1063/1.104301 |
0.726 |
|
| 1991 |
Dessau DS, Shen ZX, Wells BO, Spicer WE, Arko AJ. Spectral weight changes at the superconducting transition of Bi2Sr2CaCu2O8+δ Journal of Physics and Chemistry of Solids. 52: 1401-1409. DOI: 10.1016/0022-3697(91)90119-K |
0.714 |
|
| 1990 |
Richter M, Woicik JC, Nogami J, Pianetta P, Miyano KE, Baski AA, Kendelewicz T, Bouldin CE, Spicer WE, Quate CF, Lindau I. Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si(001)2 x 1-Sb. Physical Review Letters. 65: 3417-3420. PMID 10042866 DOI: 10.1103/Physrevlett.65.3417 |
0.656 |
|
| 1990 |
Wells BO, Shen Z, Dessau DS, Spicer WE, Olson CG, Mitzi DB, Kapitulnik A, List RS, Arko A. Angle-resolved-photoemission study of Bi2Sr2CaCu2O8+ delta : Metallicity of the Bi-O plane. Physical Review Letters. 65: 3056-3059. PMID 10042768 DOI: 10.1103/Physrevlett.65.3056 |
0.697 |
|
| 1990 |
Shen Z, Shih CK, Jepsen O, Spicer WE, Lindau I, Allen JW. Aspects of the correlation effects, antiferromagnetic order, and translational symmetry of the electronic structure of NiO and CoO. Physical Review Letters. 64: 2442-2445. PMID 10041713 DOI: 10.1103/Physrevlett.64.2442 |
0.687 |
|
| 1990 |
Wells BO, Shen Z, Harrison WA, Spicer WE. Reply to the "Comment on 'Valence-band states in Bi2(Ca,Sr,La)3Cu2O8.' " Physical Review. B, Condensed Matter. 42: 4785. PMID 9996020 DOI: 10.1103/Physrevb.42.4785 |
0.464 |
|
| 1990 |
Miyano KE, Kendelewicz T, Cao R, Spindt CJ, Lindau I, Spicer WE, Woicik JC. Morphology and barrier-height development of Bi/InP(110) interfaces. Physical Review. B, Condensed Matter. 42: 3017-3023. PMID 9995794 DOI: 10.1103/Physrevb.42.3017 |
0.591 |
|
| 1990 |
Shen Z, Allen JW, Lindberg PA, Dessau DS, Wells BO, Borg A, Ellis W, Kang JS, Oh S, Lindau I, Spicer WE. Photoemission study of CoO. Physical Review. B, Condensed Matter. 42: 1817-1828. PMID 9995615 DOI: 10.1103/Physrevb.42.1817 |
0.776 |
|
| 1990 |
Shen Z, List RS, Dessau DS, Parmigiani F, Arko AJ, Bartlett R, Wells BO, Lindau I, Spicer WE. Photoemission study of CuO and Cu2O single crystals. Physical Review. B, Condensed Matter. 42: 8081-8085. PMID 9994977 DOI: 10.1103/Physrevb.42.8081 |
0.754 |
|
| 1990 |
Yeh J, Spicer WE, Lindau I, Sun J, Char K, Missert N, Kapitulnik A, Geballe TH, Beasley MR. Variation of Cu-O charge-transfer energies in YBa2Cu3O7-x thin films studied by photoemission spectroscopy. Physical Review. B, Condensed Matter. 42: 8044-8048. PMID 9994972 DOI: 10.1103/Physrevb.42.8044 |
0.573 |
|
| 1990 |
Gunnarsson O, Allen JW, Jepsen O, Fujiwara T, Andersen OK, Olsen CG, Maple MB, Kang J, Liu LZ, Park J, Anderson RO, Ellis WP, Liu R, Markert JT, Dalichaouch Y, ... ... Spicer WE, et al. Polarized resonance photoemission for Nd2CuO4. Physical Review. B, Condensed Matter. 41: 4811-4814. PMID 9994326 DOI: 10.1103/Physrevb.41.4811 |
0.737 |
|
| 1990 |
Miyano KE, Cao R, Kendelewicz T, Wahi AK, Lindau I, Spicer WE. Reaction and barrier formation at metal-GaP(110) interfaces. Physical Review. B, Condensed Matter. 41: 1076-1089. PMID 9993804 DOI: 10.1103/Physrevb.41.1076 |
0.613 |
|
| 1990 |
Meissner PL, Bravman JC, Kendelewicz T, Miyano K, Spicer WE, Woicik JC, Bouldin C. Investigation of Thin Pd-Ge Layer Formation Using Synchrotron Vacuum Ultraviolet Photoemission Spectroscopy Mrs Proceedings. 181: 265. DOI: 10.1557/Proc-181-265 |
0.334 |
|
| 1990 |
Spindt CJ, Cao R, Miyano KE, Lindau I, Spicer WE, Pao Y‐. Morphological study of Ag, In, Sb, and Bi overlayers on GaAs(100) Journal of Vacuum Science & Technology B. 8: 974-979. DOI: 10.1116/1.584951 |
0.628 |
|
| 1990 |
Spicer WE, Liliental-Weber Z, Newman N, Weber ER, Spindt CJ. “Pinning” and Fermi level movement at GaAs surfaces and interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 2084-2089. DOI: 10.1116/1.577007 |
0.596 |
|
| 1990 |
Wahi AK, Carey GP, Miyano K, Chiang TT, Lindau I, Spicer WE. Interfacial chemistry of metals on CdTe and ZnTe (110) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 1152-1158. DOI: 10.1116/1.576978 |
0.644 |
|
| 1990 |
Wahi AK, Miyano K, Carey GP, Chiang TT, Lindau I, Spicer WE. Band bending at Al, In, Ag, and Pt interfaces with CdTe and ZnTe (110) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 1926-1933. DOI: 10.1116/1.576784 |
0.646 |
|
| 1990 |
Cao R, Miyano K, Lindau I, Spicer WE. Investigation of In contacts on atomically clean GaAs(110) surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 8: 3460-3465. DOI: 10.1116/1.576532 |
0.644 |
|
| 1990 |
Richter M, Woicik JC, Nogami J, Pianetta P, Miyano KE, Baski AA, Kendelewicz T, Bouldin CE, Spicer WE, Quate CF, Lindau I. Surface extended-x-ray-absorption fine structure and scanning tunneling microscopy of Si(001)2×1-Sb Physical Review Letters. 65: 3417-3420. DOI: 10.1103/PhysRevLett.65.3417 |
0.603 |
|
| 1990 |
Shen ZX, Shih CK, Jepsen O, Spicer WE, Lindau I, Allen JW. Aspects of the correlation effects, antiferromagnetic order, and translational symmetry of the electronic structure of NiO and CoO Physical Review Letters. 64: 2442-2445. DOI: 10.1103/PhysRevLett.64.2442 |
0.551 |
|
| 1990 |
Shen ZX, List RS, Dessau DS, Parmigiani F, Arko AJ, Bartlett R, Wells BO, Lindau I, Spicer WE. Photoemission study of CuO and Cu2O single crystals Physical Review B. 42: 8081-8085. DOI: 10.1103/PhysRevB.42.8081 |
0.519 |
|
| 1990 |
Yeh JJ, Spicer WE, Lindau I, Sun JZ, Char K, Missert N, Kapitulnik A, Geballe TH, Beasley MR. Variation of Cu-O charge-transfer energies in YBa2Cu3O7-x thin films studied by photoemission spectroscopy Physical Review B. 42: 8044-8048. DOI: 10.1103/PhysRevB.42.8044 |
0.564 |
|
| 1990 |
Miyano KE, Kendelewicz T, Cao R, Spindt CJ, Lindau I, Spicer WE, Woicik JC. Morphology and barrier-height development of Bi/InP(110) interfaces Physical Review B. 42: 3017-3023. DOI: 10.1103/PhysRevB.42.3017 |
0.566 |
|
| 1990 |
Shen ZX, Allen JW, Lindberg PAP, Dessau DS, Wells BO, Borg A, Ellis W, Kang JS, Oh SJ, Lindau I, Spicer WE. Photoemission study of CoO Physical Review B. 42: 1817-1828. DOI: 10.1103/PhysRevB.42.1817 |
0.581 |
|
| 1990 |
Gunnarsson O, Allen JW, Jepsen O, Fujiwara T, Andersen OK, Olsen CG, Maple MB, Kang JS, Liu LZ, Park JH, Anderson RO, Ellis WP, Liu R, Markert JT, Dalichaouch Y, ... ... Spicer WE, et al. Polarized resonance photoemission for Nd2CuO4 Physical Review B. 41: 4811-4814. DOI: 10.1103/PhysRevB.41.4811 |
0.499 |
|
| 1990 |
Miyano KE, Cao R, Kendelewicz T, Wahi AK, Lindau I, Spicer WE. Reaction and barrier formation at metal-GaP(110) interfaces Physical Review B. 41: 1076-1089. DOI: 10.1103/PhysRevB.41.1076 |
0.577 |
|
| 1990 |
Kendelewicz T, Miyano K, Cao R, Pianetta P, Lindau I, Spicer WE, Woicik JC. Semiconductor surface core level shifts by use of selected overlayers Physica Scripta. 41: 1034-1036. DOI: 10.1088/0031-8949/41/6/072 |
0.646 |
|
| 1990 |
Miyano KE, Cao R, Kendelewicz T, Wahi AK, Lindau I, Spicer WE. Photoemission spectroscopy of ordered overlayers on GaP (110) Physica Scripta. 41: 973-978. DOI: 10.1088/0031-8949/41/6/058 |
0.674 |
|
| 1990 |
Cao R, Miyano K, Kendelewicz T, Lindau I, Spicer WE. On the aspects of GaAs initial stage band bending Physica Scripta. 41: 887-891. DOI: 10.1088/0031-8949/41/6/038 |
0.419 |
|
| 1990 |
Lindberg PAP, Wells BO, Shen ZX, Dessau DS, Lindau I, Spicer WE, Mitzi DB, Kapitulnik A. Interaction of overlayers of Al and Rb with single-crystalline surfaces of Bi2Sr2CaCu2O8 Journal of Applied Physics. 67: 2667-2670. DOI: 10.1063/1.345480 |
0.795 |
|
| 1990 |
Dessau DS, Shen ZX, Wells BO, Spicer WE, List RS, Arko AJ, Bartlett RJ, Fisk Z, Cheong SW, Mitzi DB, Kapitulnik A, Schirber JE. Electronic structure of the gold/Bi2Sr2CaCu 2O8 and gold/EuBa2Cu3O 7-δ interfaces as studied by photoemission spectroscopy Applied Physics Letters. 57: 307-309. DOI: 10.1063/1.104219 |
0.76 |
|
| 1990 |
Cao R, Miyano K, Lindau I, Spicer WE. Investigation of interface states and fermi level pinning mechanisms with metals on InP(110) surfaces Journal of Electron Spectroscopy and Related Phenomena. 51: 581-589. DOI: 10.1016/0368-2048(90)80182-A |
0.678 |
|
| 1990 |
Lindberg PAP, Shen ZX, Spicer WE, Lindau I. Photoemission studies of high-temperature superconductors Surface Science Reports. 11: 1-137. DOI: 10.1016/0167-5729(90)90002-U |
0.637 |
|
| 1989 |
Wells BO, Lindberg PA, Shen Z, Dessau DS, Spicer WE, Lindau I, Mitzi DB, Kapitulnik A. Valence-band states in Bi2(Ca,Sr,La)3Cu2O8. Physical Review. B, Condensed Matter. 40: 5259-5262. PMID 9992545 DOI: 10.1103/Physrevb.40.5259 |
0.805 |
|
| 1989 |
Lindberg PA, Shen Z, Dessau DS, Wells BO, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. Energy dispersions of single-crystalline Bi2.0Sr1.8Ca0.8La0.3Cu2.1O8+ delta superconductors determined using angle-resolved photoelectron spectroscopy. Physical Review. B, Condensed Matter. 40: 5169-5171. PMID 9992520 DOI: 10.1103/Physrevb.40.5169 |
0.766 |
|
| 1989 |
Lindberg PA, Shen Z, Wells BO, Dessau DS, Ellis WP, Borg A, Kang J, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. Photoemission study of absorption mechanisms in Bi2.0Sr1.8Ca0.8La0.3Cu2.1O8+ delta, BaBiO3, and Nd1.85Ce0.15CuO4. Physical Review. B, Condensed Matter. 40: 8840-8843. PMID 9991366 DOI: 10.1103/Physrevb.40.8840 |
0.751 |
|
| 1989 |
Lindberg PA, Shen Z, Wells BO, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. Electronic structure of clean and Ag-covered single-crystalline Bi2Sr2CuO6. Physical Review. B, Condensed Matter. 40: 8769-8773. PMID 9991354 DOI: 10.1103/Physrevb.40.8769 |
0.676 |
|
| 1989 |
Shen Z, Lindberg PA, Wells BO, Dessau DS, Borg A, Lindau I, Spicer WE, Ellis WP, Kwei GH, Ott KC, Kang J, Allen JW. Photoemission study of monoclinic BaBiO3. Physical Review. B, Condensed Matter. 40: 6912-6918. PMID 9991069 DOI: 10.1103/Physrevb.40.6912 |
0.772 |
|
| 1989 |
Lindberg PA, Lindau I, Spicer WE. Quantitative analysis of x-ray photoemission spectra applied to Bi2Sr2CaCu2O8 high-temperature superconductors. Physical Review. B, Condensed Matter. 40: 6822-6827. PMID 9991056 DOI: 10.1103/Physrevb.40.6822 |
0.617 |
|
| 1989 |
Dessau DS, Shen Z, Lindberg PA, Wells BO, Borg A, Lindau I, Spicer WE, Waszczak JV, Schneemeyer LF. Electronic structure of Pb2Sr2PrCu3O8 as studied by resonant photoemission spectroscopy. Physical Review. B, Condensed Matter. 40: 6726-6730. PMID 9991045 DOI: 10.1103/Physrevb.40.6726 |
0.796 |
|
| 1989 |
Shen Z, Lindberg PA, Dessau DS, Lindau I, Spicer WE, Mitzi DB, Bozovic I, Kapitulnik A. Photoelectron energy-loss study of the Bi2CaSr2Cu2O8 superconductor. Physical Review. B, Condensed Matter. 39: 4295-4298. PMID 9948769 DOI: 10.1103/Physrevb.39.4295 |
0.766 |
|
| 1989 |
Lindberg PA, Shen Z, Wells BO, Dessau DS, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. Reaction of Rb and oxygen overlayers with single-crystalline Bi2Sr2CaCu2O8+ delta superconductors. Physical Review. B, Condensed Matter. 39: 2890-2893. PMID 9948571 DOI: 10.1103/Physrevb.39.2890 |
0.737 |
|
| 1989 |
Cao R, Miyano K, Kendelewicz T, Lindau I, Spicer WE. Metallization and Fermi-level movement at the Cs/GaAs(110) interfaces. Physical Review. B, Condensed Matter. 39: 12655-12663. PMID 9948134 DOI: 10.1103/Physrevb.39.12655 |
0.668 |
|
| 1989 |
Cao R, Miyano K, Kendelewicz T, Lindau I, Spicer WE. Duality in Fermi-level pinning at Cu/InP(110) and Ag/InP(110) interfaces. Physical Review. B, Condensed Matter. 39: 11146-11149. PMID 9947932 DOI: 10.1103/Physrevb.39.11146 |
0.615 |
|
| 1989 |
Shen Z, Lindberg PA, Soukiassian P, Eom CB, Lindau I, Spicer WE, Geballe TH. Nature of the states near the Fermi level of the layered superconductors of Bi2Ca1Sr2Cu2O8 and Bi2Sr2CuO6. Physical Review. B, Condensed Matter. 39: 823-826. PMID 9947242 DOI: 10.1103/Physrevb.39.823 |
0.656 |
|
| 1989 |
Newman N, Spicer WE, Weber ER, Liliental-Weber Z. Electrical Study of Metal/Gaas Interfaces Mrs Proceedings. 148: 117. DOI: 10.1557/Proc-148-117 |
0.538 |
|
| 1989 |
Kendelewicz T, Miyano K, Cao R, Lindau I, Spicer WE. Abrupt interfaces on InP(110): Cases of Sb and Sn Journal of Vacuum Science & Technology B. 7: 991-996. DOI: 10.1116/1.584592 |
0.652 |
|
| 1989 |
Chiang TT, Wahi AK, Lindau I, Spicer WE. Annealing Ag on GaAs: Interplay between cluster formation and Fermi level unpinning Journal of Vacuum Science & Technology B. 7: 958-963. DOI: 10.1116/1.584587 |
0.612 |
|
| 1989 |
Cao R, Miyano K, Kendelewicz T, Lindau I, Spicer WE. Low‐temperature alkali metal/III–V interfaces: A study of metallization and Fermi level movement Journal of Vacuum Science & Technology B. 7: 919-924. DOI: 10.1116/1.584581 |
0.645 |
|
| 1989 |
Wahi AK, Carey GP, Chiang TT, Lindau I, Spicer WE. CdTe and ZnTe metal interface formation and Fermi-level pinning Journal of Vacuum Science and Technology. 7: 494-498. DOI: 10.1116/1.576209 |
0.641 |
|
| 1989 |
Carey GP, Wahi AK, Friedman DJ, McCants CE, Spicer WE. Fermi‐level movement at metal/HgCdTe contacts formed at low temperature Journal of Vacuum Science and Technology. 7: 483-488. DOI: 10.1116/1.576207 |
0.397 |
|
| 1989 |
Cao R, Miyano K, Lindau I, Spicer WE. Metal cluster formation on GaAs(110): A temperature dependence study Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 7: 1975-1982. DOI: 10.1116/1.575996 |
0.621 |
|
| 1989 |
Cao R, Miyano K, Lindau I, Spicer WE. Fermi-level pinning at the interfaces of Sb, Sn, and Ge on GaAs(110) surfaces Journal of Vacuum Science and Technology. 7: 738-743. DOI: 10.1116/1.575876 |
0.659 |
|
| 1989 |
Miyano KE, Cao R, Kendelewicz T, Lindau I, Spicer WE. Temperature control of morphology and barrier formation at the In/GaAs(110) interface Journal of Vacuum Science and Technology. 7: 731-737. DOI: 10.1116/1.575875 |
0.641 |
|
| 1989 |
Kendelewicz T, Cao R, Miyano K, Lindau I, Spicer WE. Unique band bending at the Sb/InP(110) interface Journal of Vacuum Science and Technology. 7: 765-769. DOI: 10.1116/1.575836 |
0.654 |
|
| 1989 |
Kendelewicz T, Cao R, Miyano K, Lindau I, Spicer WE. Resonant photoemission from the Ni–GaAs(110) interface Journal of Vacuum Science and Technology. 7: 749-752. DOI: 10.1116/1.575833 |
0.605 |
|
| 1989 |
Cao R, Miyano K, Lindau I, Spicer WE. Evidence for two pinning mechanisms with noble metals on InP(110) Journal of Vacuum Science and Technology. 7: 861-864. DOI: 10.1116/1.575811 |
0.666 |
|
| 1989 |
Lindberg PAP, Shen ZX, Wells BO, Dessau DS, Ellis WP, Borg A, Kang JS, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. Photoemission study of absorption mechanisms in Bi2.0Sr1.8Ca0.8La0.3Cu2. 1O8+, BaBiO3, and Nd1.85Ce0.15CuO4 Physical Review B. 40: 8840-8843. DOI: 10.1103/PhysRevB.40.8840 |
0.554 |
|
| 1989 |
Lindberg PAP, Shen ZX, Dessau DS, Wells BO, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. Energy dispersions of single-crystalline Bi2.0Sr1.8Ca0.8La0.3Cu2.1O8+ superconductors determined using angle-resolved photoelectron spectroscopy Physical Review B. 40: 5169-5171. DOI: 10.1103/PhysRevB.40.5169 |
0.568 |
|
| 1989 |
Lindberg PAP, Shen ZX, Wells BO, Dessau DS, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. Reaction of Rb and oxygen overlayers with single-crystalline Bi2Sr2CaCu2O8+ superconductors Physical Review B. 39: 2890-2893. DOI: 10.1103/PhysRevB.39.2890 |
0.545 |
|
| 1989 |
Leon RP, Newman N, Liliental-Weber Z, Weber ER, Washburn J, Spicer WE. Mechanism for nearly ohmic behavior in annealed Au/n-GaAs Schottky diodes Journal of Applied Physics. 66: 711-715. DOI: 10.1063/1.343543 |
0.548 |
|
| 1989 |
Lindberg PAP, Shen ZX, Wells BO, Dessau DS, Borg A, Lindau I, Spicer WE, Mitzi DB, Kapitulnik A. Spectroscopic evidence of two-dimensional character of the 90 K Bi 2(Sr,La,Ca)3Cu2O8 superconductors Applied Physics Letters. 55: 1141-1143. DOI: 10.1063/1.101889 |
0.794 |
|
| 1989 |
Spindt CJ, Liu D, Miyano K, Meissner PL, Chiang TT, Kendelewicz T, Lindau I, Spicer WE. Vacuum ultraviolet photoelectron spectroscopy of (NH4) 2S-treated GaAs (100) surfaces Applied Physics Letters. 55: 861-863. DOI: 10.1063/1.101780 |
0.668 |
|
| 1989 |
Liliental-Weber Z, Newman N, Washburn J, Weber ER, Spicer WE. Influence of interfacial contamination on the structure and barrier height of Cr/GaAs Schottky contacts Applied Physics Letters. 54: 356-358. DOI: 10.1063/1.100968 |
0.57 |
|
| 1989 |
Spindt CJ, Besser RS, Cao R, Miyano K, Helms CR, Spicer WE. Photoemission study of the band bending and chemistry of sodium sulfide on GaAs (100) Applied Physics Letters. 54: 1148-1150. DOI: 10.1063/1.100744 |
0.416 |
|
| 1989 |
Cao R, Miyano K, Kendelewicz T, Lindau I, Spicer WE. Fermi level movement at the Cs/GaAs (110) interfaces Applied Physics Letters. 54: 1250-1252. DOI: 10.1063/1.100730 |
0.661 |
|
| 1989 |
Lindberg PAP, Shen ZX, Dessau DS, Wells BO, Borg A, Ellis W, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. The electronic structure of Bi2.0Sr1.8La0.3Ca0.8Cu2.1O8+δ superconductors studied using ultraviolet and X-ray photoelectron spectroscopy Physica C: Superconductivity and Its Applications. 159: 649-653. DOI: 10.1016/0921-4534(89)91299-9 |
0.804 |
|
| 1989 |
Dessau DS, Chen ZX, Lindberg PAP, Wells BO, Borg A, Lindau I, Spicer WE, Waszczak JV, Schneemeyer LF. The electronic structure of Pb2Sr2PrCu3O8 as studied by resonant photoemission spectroscopy Physica C: Superconductivity and Its Applications. 162: 1373-1374. DOI: 10.1016/0921-4534(89)90739-9 |
0.728 |
|
| 1989 |
Lindberg PAP, Shen ZX, Dessau DS, Wells BO, Borg A, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. Electronic structure of single crystalline Bi2(Sr,Ca,La)3Cu2O8 Physica C: Superconductivity and Its Applications. 162: 1313-1314. DOI: 10.1016/0921-4534(89)90709-0 |
0.788 |
|
| 1989 |
Shen ZX, Lindberg PAP, Shih CK, Spicer WE, Lindau I. Angle-resolved photoemission study of NiO and CoO Physica C: Superconductivity and Its Applications. 162: 1311-1312. DOI: 10.1016/0921-4534(89)90708-9 |
0.64 |
|
| 1989 |
Spicer WE, Cao R, Miyano K, Kendelewicz T, Lindau I, Weber E, Liliental-Weber Z, Newman N. From synchrotron radiation to I-V measurements of GaAs schottky barrier formation Applied Surface Science. 41: 1-16. DOI: 10.1016/0169-4332(89)90026-3 |
0.727 |
|
| 1989 |
Kendelewicz T, Miyano K, Cao R, Woicik JC, Lindau I, Spicer WE. Surface core level shifts on InP(110). Use of Sb overlayers Surface Science. 220: L726-L732. DOI: 10.1016/0167-2584(89)90710-X |
0.651 |
|
| 1989 |
Cao R, Miyano K, Lindau I, Spicer WE. Use of temperature to study the nature of interface states and Fermi level pinning with metals on GaAs(110) Thin Solid Films. 181: 43-55. DOI: 10.1016/0040-6090(89)90471-9 |
0.676 |
|
| 1989 |
Kendelewicz T, Miyano K, Cao R, Woicik JC, Lindau I, Spicer WE. Surface core level shifts on InP(110) Surface Science. 220. DOI: 10.1016/0039-6028(89)90226-4 |
0.632 |
|
| 1989 |
Lindberg PAP, Shen ZX, Lindau I, Spicer WE, Mitzi DB, Kapitulnik A. Photoemission study of the electronic structure (Pr0.2La0.8)(Ba1.875La0.125)Cu3O7-gd Solid State Communications. 72: 575-578. DOI: 10.1016/0038-1098(89)91036-3 |
0.638 |
|
| 1989 |
Cao R, Miyano K, Lindau I, Spicer WE. Temperature effects on morphology, reaction, and fermi level movement at Ga/InP(110) interface Solid State Communications. 70: 7-10. DOI: 10.1016/0038-1098(89)90456-0 |
0.629 |
|
| 1989 |
Lindberg PAP, Shen ZX, Hwang J, Shih CK, Lindau I, Spicer WE, Mitzi DB, Kapitulnik A. Electronic structure of the La1 + xBa2 - xCu3O7 + δ system studied by photoelectron spectroscopy Solid State Communications. 69: 27-31. DOI: 10.1016/0038-1098(89)90020-3 |
0.658 |
|
| 1989 |
Kang JS, Allen JW, Shen ZX, Ellis WP, Yeh JJ, Lee BW, Maple MB, Spicer WE, Lindau I. Electronic structure of the quenched superconductivity materials Y1-xPrxBa2Cu3O7-δ Journal of the Less-Common Metals. 148: 121-132. DOI: 10.1016/0022-5088(89)90018-0 |
0.619 |
|
| 1988 |
Bertness KA, Yeh J, Friedman DJ, Mahowald PH, Wahi AK, Kendelewicz T, Lindau I, Spicer WE. Growth structure of chemisorbed oxygen on GaAs(110) and InP(110) surfaces. Physical Review. B, Condensed Matter. 38: 5406-5421. PMID 9946979 DOI: 10.1103/Physrevb.38.5406 |
0.661 |
|
| 1988 |
Shen Z, Lindberg PA, Wells BO, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. Valence-band and core-level photoemission study of single-crystal Bi2CaSr2Cu2O8 superconductors. Physical Review. B, Condensed Matter. 38: 11820-11823. PMID 9946074 DOI: 10.1103/Physrevb.38.11820 |
0.717 |
|
| 1988 |
Kendelewicz T, Soukiassian P, Bakshi MH, Hurych Z, Lindau I, Spicer WE. Soft-x-ray photoemission study of chemisorption and Fermi-level pinning at the Cs/GaAs(110) and K/GaAs(110) interfaces. Physical Review. B, Condensed Matter. 38: 7568-7575. PMID 9945484 DOI: 10.1103/Physrevb.38.7568 |
0.613 |
|
| 1988 |
Shen Z, Lindberg PA, Lindau I, Spicer WE, Eom CB, Geballe TH. Electronic structure of Bi-Ca-Sr-Cu-O superconductors studied by photoelectron spectroscopy. Physical Review. B, Condensed Matter. 38: 7152-7155. PMID 9945426 DOI: 10.1103/Physrevb.38.7152 |
0.693 |
|
| 1988 |
Friedman DJ, Lindau I, Spicer WE. Noble-metal-CdTe interface formation. Physical Review. B, Condensed Matter. 37: 731-739. PMID 9944565 DOI: 10.1103/Physrevb.37.731 |
0.647 |
|
| 1988 |
Kendelewicz T, Soukiassian P, List RS, Woicik JC, Pianetta P, Lindau I, Spicer WE. Bonding at the K/Si(100) 2 x 1 interface: A surface extended x-ray-absorption fine-structure study. Physical Review. B, Condensed Matter. 37: 7115-7117. PMID 9943990 DOI: 10.1103/Physrevb.37.7115 |
0.624 |
|
| 1988 |
Cao R, Miyano K, Kendelewicz T, Lindau I, Spicer WE. Interaction of Thin Ga Overlayer with InP(110): a Photoemission Study Mrs Proceedings. 143. DOI: 10.1557/Proc-143-103 |
0.567 |
|
| 1988 |
Kendelewicz T, Soukiassian P, Bakshi MH, Hurych Z, Lindau I, Spicer WE. Soft x‐ray core level photoemission study of the Cs/InP interface formation Journal of Vacuum Science & Technology B. 6: 1331-1335. DOI: 10.1116/1.584259 |
0.391 |
|
| 1988 |
Spicer WE. The advanced unified defect model for Schottky barrier formation Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 6: 1245. DOI: 10.1116/1.584244 |
0.385 |
|
| 1988 |
Chiang TT, Spindt CJ, Spicer WE, Lindau I, Browning R. Reversibility of Fermi level pinning Journal of Vacuum Science & Technology B. 6: 1409-1415. DOI: 10.1116/1.584231 |
0.662 |
|
| 1988 |
Miyano KE, Cao R, Kendelewicz T, Spindt CJ, Mahowald PH, Lindau I, Spicer WE. A substrate doping variation study of the pinning states at metal/GaAs(110) interfaces Journal of Vacuum Science & Technology B. 6: 1403-1408. DOI: 10.1116/1.584230 |
0.653 |
|
| 1988 |
Mccants CE, Kendelewicz T, Mahowald PH, Bertness KA, Williams MD, Newman N, Lindau I, Spicer WE. Chemical and electrical properties at the annealed Ti/GaAsf 110) interface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1466-1472. DOI: 10.1116/1.575727 |
0.743 |
|
| 1988 |
Shih CK, Wahi AK, Lindau I, Spicer WE. Summary Abstract: Natural band lineups in II—VI compound semiconductors and their alloys: A study using core level photoemission measurement in the alloy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 2640-2642. DOI: 10.1116/1.575523 |
0.603 |
|
| 1988 |
Carey GP, Friedman DJ, Wahi AK, Shih CK, Spicer WE. Use of low temperature to reduce intermixing at metal:HgCdTe contacts Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 2736-2740. DOI: 10.1116/1.575497 |
0.397 |
|
| 1988 |
List RS, Kendelewicz T, Williams MD, Mccants CE, Lindau I, Spicer WE. Chemical reactions at the Si/GaAs(110) and Si/lnP(110) interfaces: Effects on valence-band discontinuity measurements Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1543-1547. DOI: 10.1116/1.575359 |
0.648 |
|
| 1988 |
Cao R, Miyano K, Kendelewicz T, Lindau I, Spicer WE. Summary Abstract: Temperature effects at the Sb/GaAs(110) interface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1571-1572. DOI: 10.1116/1.575327 |
0.616 |
|
| 1988 |
Kendelewicz T, Soukiassian P, Bakshi MH, Hurych Z, Lindau I, Spicer WE. Summary Abstract: Adsorption of Cs on the GaAs(110) surface Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 1569-1570. DOI: 10.1116/1.575326 |
0.617 |
|
| 1988 |
Kendelewicz T, Woicik JC, List RS, Soukiassian P, Pate BB, Pianetta P, Lindau L, Spicer WE. Summary Abstract: Bonding at the K/Si(100)2 x 1 interface: A surface extended x-ray absorption fine-structure study Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 6: 879-880. DOI: 10.1116/1.575063 |
0.345 |
|
| 1988 |
Shen ZX, Lindberg PAP, Wells BO, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. Valence-band and core-level photoemission study of single-crystal Bi2CaSr2Cu2 O8 superconductors Physical Review B. 38: 11820-11823. DOI: 10.1103/PhysRevB.38.11820 |
0.577 |
|
| 1988 |
Friedman DJ, Lindau I, Spicer WE. Noble-metal CdTe interface formation Physical Review B. 37: 731-739. DOI: 10.1103/PhysRevB.37.731 |
0.576 |
|
| 1988 |
Kendelewicz T, Soukiassian P, List RS, Woicik JC, Pianetta P, Lindau I, Spicer WE. Bonding at the K/Si(100) 2×1 interface: A surface extended x-ray-absorption fine-structure study Physical Review B. 37: 7115-7117. DOI: 10.1103/PhysRevB.37.7115 |
0.605 |
|
| 1988 |
Miret A, Newman N, Weber ER, Liliental-Weber Z, Washburn J, Spicer WE. Aging of Schottky diodes formed on air-exposed and atomically clean GaAs surfaces: An electrical study Journal of Applied Physics. 63: 2006-2010. DOI: 10.1063/1.341178 |
0.538 |
|
| 1988 |
Lindberg PAP, Soukiassian P, Shen ZX, Shah SI, Eom CB, Lindau I, Spicer WE, Geballe TH. Electronic structure of ceramics and thin-film samples of high T c Bi2Sr2CaCu2O8+δ superconductors: Effects of Ar+ sputtering, O2 exposure, and Rb deposition Applied Physics Letters. 53: 1970-1972. DOI: 10.1063/1.100672 |
0.633 |
|
| 1988 |
Lindberg PAP, Shen ZX, Lindau I, Spicer WE, Eom CB, Geballe TH. Photoemission study of the surface electronic structure of Bi-Ca-Sr-Cu-O superconductors modified by Ne sputtering, Ag deposition, and heat treatment Applied Physics Letters. 53: 529-531. DOI: 10.1063/1.100626 |
0.667 |
|
| 1988 |
Lindberg PAP, Shen ZX, Wells BO, Mitzi DB, Lindau I, Spicer WE, Kapitulnik A. Surface structure of Bi2Sr2CaCu2O 8+δ high-temperature superconductors studied using low-energy electron diffraction Applied Physics Letters. 53: 2563-2565. DOI: 10.1063/1.100532 |
0.63 |
|
| 1988 |
Cao R, Miyano K, Lindau I, Spicer WE. Unusual low-temperature behavior of Fermi level movement at the Sb/GaAs interface Applied Physics Letters. 53: 137-139. DOI: 10.1063/1.100417 |
0.646 |
|
| 1988 |
Newman N, Liliental-Weber Z, Weber ER, Washburn J, Spicer WE. Schottky barrier instabilities due to contamination Applied Physics Letters. 53: 145-147. DOI: 10.1063/1.100351 |
0.585 |
|
| 1988 |
Cao R, Miyano K, Kendelewicz T, Lindau I, Spicer WE. Lack of temperature dependence of Fermi level pinning at the Cu/InP(110) interface: A comparison with Cu/GaAs and other systems Applied Physics Letters. 53: 210-212. DOI: 10.1063/1.100133 |
0.631 |
|
| 1988 |
Spicer WE, Kendelewicz T, Newman N, Cao R, McCants C, Miyano K, Lindau I, Liliental-Weber Z, Weber ER. The advanced unified defect model and its applications Applied Surface Science. 33: 1009-1029. DOI: 10.1016/0169-4332(88)90411-4 |
0.732 |
|
| 1988 |
Cao R, Miyano K, Kendelewicz T, Lindau I, Spicer WE. Photoemission investigation of Sb/GaAs(110) interfaces Surface Science. 206: 413-425. DOI: 10.1016/0039-6028(88)90144-6 |
0.672 |
|
| 1988 |
Bertness KA, Mahowald PH, McCants CE, Wahi AK, Kendelewicz T, Lindau I, Spicer WE. Photoenhancement mechanism for oxygen chemisorption on GaAs(110) using visible light Applied Physics a Solids and Surfaces. 47: 219-228. DOI: 10.1007/Bf00615927 |
0.637 |
|
| 1987 |
Doniach S, Chin KK, Lindau I, Spicer WE. Microscopic metal clusters and Schottky barrier formation. Physical Review Letters. 58: 591-594. PMID 10034980 DOI: 10.1103/Physrevlett.58.591 |
0.614 |
|
| 1987 |
Shih CK, Spicer WE. Determination of a natural valence-band offset: The case of HgTe-CdTe. Physical Review Letters. 58: 2594-2597. PMID 10034792 DOI: 10.1103/Physrevlett.58.2594 |
0.367 |
|
| 1987 |
Shen Zx, Allen JW, Yeh JJ, Kang J, Ellis W, Spicer W, Lindau I, Maple MB, Dalichaouch YD, Torikachvili MS, Sun JZ. Anderson Hamiltonian description of the experimental electronic structure and magnetic interactions of copper oxide superconductors. Physical Review. B, Condensed Matter. 36: 8414-8428. PMID 9942659 DOI: 10.1103/Physrevb.36.8414 |
0.698 |
|
| 1987 |
Chin KK, Cao R, Kendelewicz T, Miyano K, Yeh J, Lindau I, Spicer WE. Physical nature of the InP near-surface defect acceptor and donor states. Physical Review. B, Condensed Matter. 36: 5914-5919. PMID 9942269 DOI: 10.1103/Physrevb.36.5914 |
0.651 |
|
| 1987 |
Friedman DJ, Carey GP, Lindau I, Spicer WE. Overlayer-cation reaction at the Pt/Hg1-xCdxTe interface. Physical Review. B, Condensed Matter. 35: 1188-1195. PMID 9941526 DOI: 10.1103/Physrevb.35.1188 |
0.581 |
|
| 1987 |
Newman N, van Schilfgaarde M, Spicer WE. Electrical study of Schottky-barrier heights on atomically clean p-type InP(110) surfaces. Physical Review. B, Condensed Matter. 35: 6298-6304. PMID 9940862 DOI: 10.1103/Physrevb.35.6298 |
0.548 |
|
| 1987 |
Petro WG, Kendelewicz T, Lindau I, Spicer WE. Erratum: Au-GaAs(110) interface: Photoemission studies of the effects of temperature Physical Review. B, Condensed Matter. 35: 5891. PMID 9940809 |
0.588 |
|
| 1987 |
Shen Z, Allen JW, Yeh JJ, Kang J, Ellis W, Spicer WE, Lindau I, Sun JZ, Geballe TH, Maple MB, Dalichaouch YD, Torikachvei MS. Photoemission Study of the Electronic Structure of Copper Oxide Superconductors Mrs Proceedings. 99. DOI: 10.1557/Proc-99-349 |
0.63 |
|
| 1987 |
Liliental-Weber Z, Miret-Goutier A, Newman N, Jou C, Spicer W, Washburn J, Weber E. The Influence of Current Stressing on the Structure of Ag Contacts to GaAs Mrs Proceedings. 102. DOI: 10.1557/Proc-102-241 |
0.534 |
|
| 1987 |
List RS, Woicik JC, Lindau I, Spicer WE. The Si/GaAs (110) heterojunction: Strain, disorder, and valence‐band discontinuity Journal of Vacuum Science & Technology B. 5: 1279-1283. DOI: 10.1116/1.583819 |
0.355 |
|
| 1987 |
Mahowald PH, Kendelewicz T, Bertness KA, McCants CE, Williams MD, Spicer WE. Valence‐band discontinuity at the Ge/InP(110) interface Journal of Vacuum Science & Technology B. 5: 1258-1262. DOI: 10.1116/1.583815 |
0.433 |
|
| 1987 |
Chin KK, Miyano K, Cao R, Kendelewicz T, Yeh J, Lindau I, Spicer WE. Summary Abstract: Chemical reaction at the In on GaAs (110) interface: A synchrotron radiation photoemission study Journal of Vacuum Science & Technology B. 5: 1080-1082. DOI: 10.1116/1.583732 |
0.6 |
|
| 1987 |
McCants CE, Kendelewicz T, Bertness KA, Mahowald PH, Williams MD, List RS, Lindau I, Spicer WE. Chemical and electronic properties of the Pt/GaAs(110) interface Journal of Vacuum Science & Technology B. 5: 1068-1074. DOI: 10.1116/1.583730 |
0.384 |
|
| 1987 |
Kendelewicz T, Mahowald PH, McCants CE, Bartness KA, Lindau I, Spicer WE. Chemical reaction and Schottky barrier formation at the Ti/InP(110) and Sn/InP(110) interfaces: Reactive versus nonreactive cases Journal of Vacuum Science & Technology B. 5: 1033-1038. DOI: 10.1116/1.583723 |
0.671 |
|
| 1987 |
Carey GP, Wahi AK, Stahie CM, Silberman JA, Spicer WE, Wilson JA. Photoemission study of Cd loss and its effect on the electronic structure of etched Hg1-xCdxTe surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 3203-3206. DOI: 10.1116/1.574838 |
0.373 |
|
| 1987 |
Carey GP, Friedman DJ, Lindau I, Spicer WE. Photoemission studies of the room-temperature si/hg1-xcdxte, si/hgte, and si/cdte interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 3198-3202. DOI: 10.1116/1.574837 |
0.641 |
|
| 1987 |
Friedman DJ, Carey GP, Lindau I, Spicer WE. Systematics of metal contacts to Hg1_xCdxTe Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 3190-3192. DOI: 10.1116/1.574835 |
0.632 |
|
| 1987 |
List RS, Woicik J, Mahowald PH, Lindau I, Spicer WE. The Si/GaAs(110) heterojunction discontinuity: Amorphous versus crystalline overlayers Journal of Vacuum Science and Technology. 5: 1459-1463. DOI: 10.1116/1.574621 |
0.649 |
|
| 1987 |
Nogami J, Friedman J, Kendelewicz T, Lindau I, Spicer WE. Summary Abstract: Binding energy shifts from alloying at metal/ll-VI compound semiconductor interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 1530-1532. DOI: 10.1116/1.574599 |
0.612 |
|
| 1987 |
Coulman D, Newman N, Reid GA, Liliental-Weber Z, Weber ER, Spicer WE. A chemical and structural investigation of schottky and ohmic au/gaas contacts Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 5: 1521-1525. DOI: 10.1116/1.574595 |
0.573 |
|
| 1987 |
Doniach S, Chin KK, Lindau I, Spicer WE. Erratum: Microscopic metal clusters and schottky-barrier formation Physical Review Letters. 58: 2153. DOI: 10.1103/Physrevlett.58.2153 |
0.587 |
|
| 1987 |
Hwang J, Pianetta P, Shih CK, Spicer WE, Pao YC, Harris JS. Determination of the natural valence-band offset in the In xGa1-xAs system Applied Physics Letters. 51: 1632-1633. DOI: 10.1063/1.98578 |
0.314 |
|
| 1987 |
Eglash SJ, Newman N, Pan S, Mo D, Shenai K, Spicer WE, Ponce FA, Collins DM. Engineered Schottky barrier diodes for the modification and control of Schottky barrier heights Journal of Applied Physics. 61: 5159-5169. DOI: 10.1063/1.338290 |
0.58 |
|
| 1987 |
Bertness KA, Chiang TT, McCants CE, Mahowald PH, Wahi AK, Kendelewicz T, Lindau I, Spicer WE. Comparative uptake kinetics of N2O and O2 chemisorption on GaAs(110) Surface Science. 185: 544-558. DOI: 10.1016/S0039-6028(87)80176-0 |
0.639 |
|
| 1987 |
Cao R, Miyano K, Kendelewicz T, Chin KK, Lindau I, Spicer WE. Kinetics study of initial stage band bending at metal GaAs(110) interfaces Journal of Vacuum Science & Technology B. 5: 998-1002. DOI: 10.1007/978-94-009-0657-0_31 |
0.659 |
|
| 1986 |
Newman N, van Schilfgaarde M, Kendelewicz T, Williams MD, Spicer WE. Erratum: Electrical study of Schottky barriers on atomically clean GaAs(110) surfaces Physical Review. B, Condensed Matter. 34: 1329. PMID 9949103 DOI: 10.1103/Physrevb.34.1329.2 |
0.34 |
|
| 1986 |
Friedman DJ, Carey GP, Lindau I, Spicer WE. Effect of different cation-anion bond strengths on metal-ternary-semiconductor interface formation: Cu/Hg0.75Cd0.25Te and Cu/CdTe. Physical Review. B, Condensed Matter. 34: 5329-5342. PMID 9940365 DOI: 10.1103/Physrevb.34.5329 |
0.613 |
|
| 1986 |
Tabe M, Chiang TT, Lindau I, Spicer WE. Initial stage of thermal oxidation of the Si(111)-(7 x 7) surface. Physical Review. B, Condensed Matter. 34: 2706-2717. PMID 9939966 |
0.582 |
|
| 1986 |
Nogami J, Kendelewicz T, Lindau I, Spicer WE. Binding-energy shifts from alloying at metal-compound-semiconductor interfaces. Physical Review. B, Condensed Matter. 34: 669-674. PMID 9939672 DOI: 10.1103/Physrevb.34.669 |
0.632 |
|
| 1986 |
Kendelewicz T, List RS, Williams MD, Bertness KA, Lindau I, Spicer WE. Soft-x-ray photoemission study of Co-n-type InP(110) interface. Physical Review. B, Condensed Matter. 34: 558-562. PMID 9939662 DOI: 10.1103/Physrevb.34.558 |
0.665 |
|
| 1986 |
Petro WG, Kendelewicz T, Lindau I, Spicer WE. Au-GaAs(110) interface: Photoemission studies of the effects of temperature. Physical Review. B, Condensed Matter. 34: 7089-7106. PMID 9939362 DOI: 10.1103/Physrevb.34.7089 |
0.626 |
|
| 1986 |
Newman N, van Schilfgaarde M, Kendelwicz T, Williams MD, Spicer WE. Electrical study of Schottky barriers on atomically clean GaAs(110) surfaces. Physical Review. B, Condensed Matter. 33: 1146-1159. PMID 9938380 DOI: 10.1103/Physrevb.33.1146 |
0.558 |
|
| 1986 |
Liliental-Weber Z, Weber ER, Newman N, Spicer WE, Gronsky R, Washburn J. Observation of Stoichiometry Changes Beneath Metal Contacts on GaAs Materials Science Forum. 1223-1228. DOI: 10.4028/Www.Scientific.Net/Msf.10-12.1223 |
0.582 |
|
| 1986 |
Chin KK, Cao R, Kendelewicz T, Miyano K, Yeh JJ, Doniach S, Lindau I, Spicer WE. Photoemission Study of the Physical Nature of the InP Near-Surface Defect States Mrs Proceedings. 77. DOI: 10.1557/Proc-77-429 |
0.662 |
|
| 1986 |
Chin KK, Cao R, Kendelewicz T, Miyano K, Williams MD, Doniach S, Lindau I, Spicer WE. Transition from Schottky Limit to Bardeen Limit in the Schottky Barrier Formation of al on n- and p-GaAs(110) Interfaces Mrs Proceedings. 77. DOI: 10.1557/Proc-77-297 |
0.419 |
|
| 1986 |
Bertness KA, McCants CE, Chiang TT, Mahowald PH, Wahi AK, Kendelewicz T, Lindau I, Spicer WE. Comparison of Low Intensity Laser Enhancement of Oxygen Chemisorption on GaAs Using O 2 and N 2 O Mrs Proceedings. 75: 575. DOI: 10.1557/Proc-75-575 |
0.631 |
|
| 1986 |
Bertness KA, Friedman DJ, Mahowald PH, Yeh JJ, Wahi AK, Lindau I, Spicer WE. Oxygen chemisorption on GaAs(110): Surface or subsurface growth? Journal of Vacuum Science & Technology B. 4: 1102-1108. DOI: 10.1116/1.583550 |
0.645 |
|
| 1986 |
Friedman DJ, Carey GP, Lindau I, Spicer WE, Wilson JA. Role of Hg bonding in metal/Hg1−xCdxTe interface formation Journal of Vacuum Science & Technology B. 4: 980-985. DOI: 10.1116/1.583501 |
0.656 |
|
| 1986 |
Kendelewicz T, List RS, Bertness KA, Williams MD, Lindau I, Spicer WE. Photoemission study of the reactive Pd/InP(110) interface Journal of Vacuum Science & Technology B. 4: 959-965. DOI: 10.1116/1.583498 |
0.624 |
|
| 1986 |
Mahowald PH, List RS, Spicer WE, Woicik J, Pianetta P. Erratum: Heterojunction band discontinuity at the Si–Ge interface [J. Vac. Sci. Technol. B 3, 1252 (1985)] Journal of Vacuum Science & Technology B. 4: 45-45. DOI: 10.1116/1.583350 |
0.311 |
|
| 1986 |
Shih CK, Friedman DJ, Bertness KA, Lindau I, Spicer WE, Wilson JA. Electron beam induced hg desorption and the electronic structure of the hg depleted surface of hg1-x cdx te Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 1997-2001. DOI: 10.1116/1.574015 |
0.634 |
|
| 1986 |
Friedman DJ, Carey GP, Shih CK, Lindau I, Spicer WE, Wilson JA. The Ag/(Hg, Cd)Te and Al/(Hg, Cd)Te interfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 4: 1977-1982. DOI: 10.1116/1.574011 |
0.601 |
|
| 1986 |
Nogami J, Williams MD, Kendelewicz T, Lindau I, Spicer WE. Chemical reaction and anion trapping at the Yb/GaAs(110) interface Journal of Vacuum Science and Technology. 4: 808-813. DOI: 10.1116/1.573780 |
0.648 |
|
| 1986 |
Chin KK, Kendelewicz T, McCants C, Cao R, Miyano K, Lindau I, Spicer WE. Kinetic study of Schottky barrier formation of In on GaAs(110) surface Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 4: 969-972. DOI: 10.1116/1.573767 |
0.668 |
|
| 1986 |
List RS, Mahowald PH, Woicik J, Spicer WE. The Si/GaAs(110) heterojunction Journal of Vacuum Science and Technology. 4: 1391-1395. DOI: 10.1116/1.573577 |
0.346 |
|
| 1986 |
Bertness KA, Kendelewicz T, List RS, Williams MD, Lindau I, Spicer WE. Fermi level pinning during oxidation of atomically clean n‐InP(110) Journal of Vacuum Science and Technology. 4: 1424-1426. DOI: 10.1116/1.573525 |
0.637 |
|
| 1986 |
Nogami J, Kendelewicz T, Lindau I, Spicer WE. Binding-energy shifts from alloying at metalcompound-semiconductor interfaces Physical Review B. 34: 669-674. DOI: 10.1103/PhysRevB.34.669 |
0.558 |
|
| 1986 |
Kendelewicz T, List RS, Williams MD, Bertness KA, Lindau I, Spicer WE. Soft-x-ray photoemission study of Con-type InP(110) interface Physical Review B. 34: 558-562. DOI: 10.1103/PhysRevB.34.558 |
0.547 |
|
| 1986 |
Friedman DJ, Carey GP, Lindau I, Spicer WE. Effect of different cation-anion bond strengths on metalternary- semiconductor interface formation: Cu/Hg0.75Cd0.25Te and Cu/CdTe Physical Review B. 34: 5329-5342. DOI: 10.1103/PhysRevB.34.5329 |
0.561 |
|
| 1986 |
Tabe M, Chiang TT, Lindau I, Spicer WE. Initial stage of thermal oxidation of the Si(111)-(7×7) surface Physical Review B. 34: 2706-2717. DOI: 10.1103/PhysRevB.34.2706 |
0.581 |
|
| 1986 |
Liliental-Weber Z, Washburn J, Newman N, Spicer WE, Weber ER. Morphology of Au/GaAs interfaces Applied Physics Letters. 49: 1514-1516. DOI: 10.1063/1.97318 |
0.61 |
|
| 1986 |
Friedman DJ, Carey GP, Shih CK, Lindau I, Spicer WE, Wilson JA. Diffusion of Ag and Hg at the Ag/(Hg, Cd)Te interface Applied Physics Letters. 48: 44-46. DOI: 10.1063/1.96756 |
0.597 |
|
| 1986 |
Kendelewicz T, Williams MD, Chin KK, McCants CE, List RS, Lindau I, Spicer WE. Temperature-dependent pinning at the Al/n-GaAs(110) interface Applied Physics Letters. 48: 919-921. DOI: 10.1063/1.96658 |
0.625 |
|
| 1986 |
Spicer WE, Kendelewicz T, Newman N, Chin KK, Lindau I. The mechanisms of Schottky barrier pinning in III-V semiconductors: Criteria developed from microscopic (atomic level) and macroscopic experiments Surface Science. 168: 240-259. DOI: 10.1016/0039-6028(86)90855-1 |
0.711 |
|
| 1986 |
Williams MD, Nogami J, Kendelewicz T, List RS, Bertness KA, Lindau I, Spicer WE. Yb/GaAs (110): The pinning behavior of the rare earth GaAs interface Solid State Communications. 58: 15-18. DOI: 10.1016/0038-1098(86)90877-X |
0.661 |
|
| 1985 |
Kendelewicz T, Williams MD, Petro WG, Lindau I, Spicer WE. Interfacial chemistry and Schottky-barrier formation of the Ni/InP(110) and Ni/GaAs(110) interfaces. Physical Review. B, Condensed Matter. 32: 3758-3765. PMID 9937525 DOI: 10.1103/Physrevb.32.3758 |
0.618 |
|
| 1985 |
Chin KK, Pan SH, Mo D, Mahowald P, Newman N, Lindau I, Spicer WE. Electronic structure and Schottky-barrier formation of Ag on n-type GaAs(110). Physical Review. B, Condensed Matter. 32: 918-923. PMID 9937100 DOI: 10.1103/Physrevb.32.918 |
0.686 |
|
| 1985 |
Kendelewicz T, Williams MD, Petro WG, Lindau I, Spicer WE. Growth, chemical interaction, and Schottky-barrier formation of column-III metal overlayers on InP(110). Physical Review. B, Condensed Matter. 31: 6503-6513. PMID 9935530 DOI: 10.1103/Physrevb.31.6503 |
0.6 |
|
| 1985 |
Newman N, van Schilfgaarde M, Kendelewicz T, Spicer WE. Electrical Study of Schottky Barriers on Cleaved InP and GaAs (110) Surfaces Mrs Proceedings. 54. DOI: 10.1557/Proc-54-433 |
0.563 |
|
| 1985 |
Chin KK, Cao R, Miyano K, McCants CE, Lindau I, Spicer WE. An Investigation Of The Cause Of Initial Band Bending Of A Cleaved Clean n-GaAs(llO) Surface Mrs Proceedings. 54. DOI: 10.1557/Proc-54-341 |
0.679 |
|
| 1985 |
Mahowald PH, List RS, Spicer WE, Woicik J, Pianetta P. Heterojunction band discontinuity at the Si–Ge(111) interface Journal of Vacuum Science & Technology B. 3: 1252-1255. DOI: 10.1116/1.583050 |
0.42 |
|
| 1985 |
Spicer WE. Experimental results examining various models of Schottky barrier formation on GaAs Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 3: 1178. DOI: 10.1116/1.583035 |
0.365 |
|
| 1985 |
Newman N, Chin KK, Petro WG, Kendelewicz T, Williams MD, McCants CE, Spicer WE. Annealing of intimate Ag, Al, and Au-GaAs Schottky barriers Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 3: 996-1001. DOI: 10.1116/1.573374 |
0.585 |
|
| 1985 |
Williams MD, Kendelewicz T, Newman N, Lindau I, Spicer WE. Summary Abstract: Ni and Pd Schottky barriers on GaAs(110) Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 3: 977-978. DOI: 10.1116/1.573368 |
0.669 |
|
| 1985 |
List RS, Kendelewicz T, Williams MD, Lindau I, Spicer WE. The reactive Cr/InP and Mn/InP interfaces Journal of Vacuum Science and Technology. 3: 1002-1006. DOI: 10.1116/1.573238 |
0.626 |
|
| 1985 |
Carey GP, Cole S, Yamashita T, Silberman JA, Spicer WE, Wilson JA. TEM investigation of the differences in ion milling induced damage of Hg1-xCdxTe and CdTe heterojunctions Journal of Vacuum Science and Technology. 3: 255-258. DOI: 10.1116/1.573212 |
0.307 |
|
| 1985 |
Silberman JA, Laser D, Shih C, Friedman DJ, Lindau I, Spicer WE, Wilson JA. Angle‐resolved photoemission spectroscopy of Hg1−xCdxTe Journal of Vacuum Science and Technology. 3: 233-237. DOI: 10.1116/1.573209 |
0.782 |
|
| 1985 |
Silberman JA, Laser D, Lindau I, Spicer WE, Wilson JA. Comparative study of activated oxygen uptake on HgTe, Hg0.69Cd0.31Te, and CdTe Journal of Vacuum Science and Technology. 3: 222-225. DOI: 10.1116/1.573206 |
0.596 |
|
| 1985 |
Cole S, Carey GP, Silberman JA, Spicer WE, Wilson JA. Surface and bulk structural defects in Hg1−xCdxTe Journal of Vacuum Science and Technology. 3: 206-211. DOI: 10.1116/1.573203 |
0.369 |
|
| 1985 |
Sher A, Chen AB, Spicer WE, Shih C. Effects influencing the structural integrity of semiconductors and their alloys Journal of Vacuum Science and Technology. 3: 105-111. DOI: 10.1116/1.573177 |
0.691 |
|
| 1985 |
Jupiter PJ, Viescas AJ, Carbone C, Lindau I, Spicer WE. Changes in O2 and CO surface chemistry with increasing carbon concentration on W(100) Journal of Vacuum Science and Technology. 3: 1517-1520. DOI: 10.1116/1.573154 |
0.637 |
|
| 1985 |
Bertness KA, Petro WG, Silberman JA, Friedman DJ, Spicer WE. Optically enhanced low temperature oxygen chemisorption on GaAs(110) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 3: 1464-1467. DOI: 10.1116/1.572762 |
0.325 |
|
| 1985 |
Newman N, Kendelewicz T, Bowman L, Spicer WE. Electrical study of Schottky barrier heights on atomically clean and air‐exposedn‐InP(110) surfaces Applied Physics Letters. 46: 1176-1178. DOI: 10.1063/1.95749 |
0.614 |
|
| 1985 |
Skeath P, Su CY, Lindau I, Spicer WE. Comparative study of Fermi energy pinning and adatom bond character: Antimony versus the column 3 elements (Al, Ga, In) on GaAs (110) and GaSb (110) Journal of Applied Physics. 57: 5089-5092. DOI: 10.1063/1.335293 |
0.674 |
|
| 1985 |
Newman N, Petro WG, Kendelewicz T, Pan SH, Eglash SJ, Spicer WE. Annealing of intimate Au-GaAs Schottky barriers: Thick and ultrathin metal films Journal of Applied Physics. 57: 1247-1251. DOI: 10.1063/1.334521 |
0.555 |
|
| 1985 |
Spicer WE, Eglash SJ. Fundamental Studies of Interfaces: The Unified Defect Model and Its Application to GaAs Integrated Circuits Vlsi Electronics Microstructure Science. 10: 79-117. DOI: 10.1016/B978-0-12-234110-6.50008-9 |
0.365 |
|
| 1985 |
Lindau I, Kendelewicz T, Newman N, List R, Williams M, Spicer W. Electronic properties of metal/III–V semiconductor interfaces Surface Science. 162: 591-604. DOI: 10.1016/0039-6028(85)90953-7 |
0.728 |
|
| 1985 |
Stefan PM, Shek ML, Spicer WE. Photoemission studies of W(100)-(5 × 1)C, 65 ⩽ hν ⩽ 200 eV and a comparison with WC(0001) Surface Science. 149: 423-448. DOI: 10.1016/0039-6028(85)90073-1 |
0.355 |
|
| 1985 |
Newman N, Kendelewicz T, Thomson D, Pan SH, Eglash SJ, Spicer WE. Schottky barriers on atomically clean cleaved GaAs Solid-State Electronics. 28: 307-312. DOI: 10.1016/0038-1101(85)90011-5 |
0.597 |
|
| 1984 |
Spicer WE, Pan S, Mo D, Newman N, Mahowald P, Kendelewicz T, Eglash S. Metallic and atomic approximations at the Schottky barrier interfaces Journal of Vacuum Science & Technology B. 2: 476-480. DOI: 10.1116/1.582898 |
0.562 |
|
| 1984 |
Kendelewicz T, Petro WG, Lindau I, Spicer WE. Systematics of interfacial chemical reactions on InP(110) Journal of Vacuum Science & Technology B. 2: 453-458. DOI: 10.1116/1.582894 |
0.661 |
|
| 1984 |
Silberman JA, Laser D, Lindau I, Spicer WE, Wilson JA. Summary Abstract: Activated oxygen uptake on HgTe, CdTe, and Hg0.69Cd0.31Te Journal of Vacuum Science & Technology B. 2: 589-590. DOI: 10.1116/1.582849 |
0.565 |
|
| 1984 |
Kendelewicz T, Petro WG, Lindau I, Spicer WE. Summary Abstract: Unusual interfacial kinetics and Schottky barrier formation of thallium on the GaAs(110) surface Journal of Vacuum Science & Technology B. 2: 582-583. DOI: 10.1116/1.582842 |
0.649 |
|
| 1984 |
Petro WG, Kendelewicz T, Babalola IA, Lindau I, Spicer WE. Noble metal interactions with the InP(110) surface Journal of Vacuum Science and Technology. 2: 835-838. DOI: 10.1116/1.572518 |
0.661 |
|
| 1984 |
Pate BB, Oshima M, Silberman JA, Rossi G, Lindau I, Spicer WE. Carbon 1s studies of diamond(111): Surface shifts, hydrogenation, and electron escape lengths Journal of Vacuum Science and Technology. 2: 957-960. DOI: 10.1116/1.572490 |
0.712 |
|
| 1984 |
Kendelewicz T, Petro WG, Lindau I, Spicer WE. The interaction of Pd with the InP(110) surface Journal of Vacuum Science and Technology. 2: 542-545. DOI: 10.1116/1.572441 |
0.653 |
|
| 1984 |
Kendelewicz T, Petro WG, Lindau I, Spicer WE. Interaction of Al overlayers with the InP(110) surface Physical Review B. 30: 5800-5810. DOI: 10.1103/Physrevb.30.5800 |
0.649 |
|
| 1984 |
Kendelewicz T, List RS, Williams MD, Lindau I, Spicer WE. Absence of core-exciton-induced resonant photoemission from InP(110) Physical Review B. 30: 2263-2265. DOI: 10.1103/Physrevb.30.2263 |
0.577 |
|
| 1984 |
Babalola IA, Petro WG, Kendelewicz T, Lindau I, Spicer WE. Ag-InP(110) interface: Photoemission studies of interfacial reactions and Schottky-barrier formation Physical Review B. 29: 6614-6622. DOI: 10.1103/Physrevb.29.6614 |
0.633 |
|
| 1984 |
Stefan PM, Shek ML, Lindau I, Spicer WE, Johansson LI, Herman F, Kasowski RV, Brogen G. Photoemission study of WC(0001) Physical Review B. 29: 5423-5444. DOI: 10.1103/Physrevb.29.5423 |
0.603 |
|
| 1984 |
Kendelewicz T, Petro WG, Lindau I, Spicer WE. Chemical reactions at the noble and near‐noble metal/InP interfaces: Comparison to Si and GaAs Applied Physics Letters. 44: 1066-1068. DOI: 10.1063/1.94645 |
0.641 |
|
| 1984 |
Kendelewicz T, Petro WG, Pan SH, Williams MD, Lindau I, Spicer WE. Fermi energy pinning behavior and chemical reactivity of the Pd/GaAs (110) interface Applied Physics Letters. 44: 113-115. DOI: 10.1063/1.94568 |
0.64 |
|
| 1984 |
Williams MD, Petro WG, Kendelewicz T, Pan SH, Lindau I, Spicer WE. An exploratory study of the reactive Ni-GaAs (1 1 0) interface Solid State Communications. 51: 819-822. DOI: 10.1016/0038-1098(84)90475-7 |
0.686 |
|
| 1983 |
Eglash SJ, Pan S, Mo D, Spicer WE, Collins DM. Modified Schottky Barrier Heights by Interfacial Doped Layers: MBE Al on GaAs Japanese Journal of Applied Physics. 22: 431-435. DOI: 10.7567/Jjaps.22S1.431 |
0.364 |
|
| 1983 |
Pan SH, Kendelewicz T, Petru WG, Williams MD, Lindau I, Spicer WE. Photoemission Studies Of The CU-GaAs(ll0) Interface Formation * Mrs Proceedings. 25. DOI: 10.1557/Proc-25-335 |
0.648 |
|
| 1983 |
Petro WG, Kendelewicz T, Babalola IA, Lindau I, Spicer WE. Photoemission Studies of the Ag/InP(110) Interface: Interfacial Reactions and Schottky Barrier Formation Mrs Proceedings. 25: 329. DOI: 10.1557/Proc-25-329 |
0.605 |
|
| 1983 |
Kendelewicz T, Petro WG, Williams MD, Pan SH, Lindau I, Spicer WE. Chemical Reaction at the Ni/Inp (110) and Ni/GaAs (110) Interfaces * Mrs Proceedings. 25: 323. DOI: 10.1557/Proc-25-323 |
0.598 |
|
| 1983 |
Kendelewicz T, Petro WG, Babalola IA, Silberman JA, Lindau I, Spicer WE. Room temperature exchange reaction at the Al–InP(110) interface: Soft x‐ray photoemission studies Journal of Vacuum Science & Technology B. 1: 623-627. DOI: 10.1116/1.582611 |
0.645 |
|
| 1983 |
Lü ZM, Petro WG, Mahowald PH, Oshima M, Lindau I, Spicer WE. The effect of surface oxygen on the intermixing and Schottky barrier at GaAs(110)–Au interfaces Journal of Vacuum Science & Technology B. 1: 598-601. DOI: 10.1116/1.582605 |
0.655 |
|
| 1983 |
Pan SH, Mo D, Petro WG, Lindau I, Spicer WE. Schottky barrier formation and intermixing of noble metals on GaAs(110) Journal of Vacuum Science & Technology B. 1: 593-597. DOI: 10.1116/1.582604 |
0.648 |
|
| 1983 |
Kendelewicz T, Rossi G, Petro WG, Babalola IA, Lindau I, Spicer WE. Similarities in chemical intermixing at the Cu/InP and Cu/Si interfaces Journal of Vacuum Science & Technology B. 1: 564-569. DOI: 10.1116/1.582599 |
0.731 |
|
| 1983 |
Silberman JA, Laser D, Lindau I, Spicer WE, Wilson JA. Initial stages of oxide formation on HgCdTe exposed to activated oxygen Journal of Vacuum Science and Technology. 1: 1706-1711. DOI: 10.1116/1.572262 |
0.634 |
|
| 1983 |
Casselman TN, Sher A, Silberman J, Spicer WE, Chen A‐. On the determination of the energy band offsets in Hg1−xCdxTe heterojunctions Journal of Vacuum Science and Technology. 1: 1692-1695. DOI: 10.1116/1.572259 |
0.326 |
|
| 1983 |
Wilson JA, Cotton VA, Silberman J, Laser D, Spicer WE, Morgen P. (HgCd)Te–SiO2 interface structure Journal of Vacuum Science and Technology. 1: 1719-1722. DOI: 10.1116/1.572215 |
0.388 |
|
| 1983 |
Spicer WE, Silberman JA, Lindau I, Chen A‐, Sher A, Wilson JA. Band gap variation and lattice, surface, and interface ‘‘instabilities’’ in Hg1−xCdxTe and related compounds Journal of Vacuum Science and Technology. 1: 1735-1743. DOI: 10.1116/1.572206 |
0.675 |
|
| 1983 |
Rossi G, Kendelewicz T, Lindau I, Spicer WE. The Si(111)/Cu interface studied with surface sensitive techniques Journal of Vacuum Science and Technology. 1: 987-990. DOI: 10.1116/1.572019 |
0.726 |
|
| 1983 |
Babalola IA, Petro WG, Kendelewicz T, Lindau I, Spicer WE. Photoemission studies of the Au–InP(110) interface Journal of Vacuum Science and Technology. 1: 762-765. DOI: 10.1116/1.571995 |
0.667 |
|
| 1983 |
Petro WG, Babalola IA, Kendelewicz T, Lindau I, Spicer WE. Photoemission studies of the effect of temperature on the Au–GaAs(110) interface Journal of Vacuum Science and Technology. 1: 1181-1184. DOI: 10.1116/1.571893 |
0.664 |
|
| 1983 |
Skeath P, Lindau I, Su CY, Spicer WE. Chemical bonding, adatom-adatom interaction, and replacement reaction of column-3 metals on GaAs(110) Physical Review B. 28: 7051-7067. DOI: 10.1103/Physrevb.28.7051 |
0.6 |
|
| 1983 |
Kendelewicz T, Petro WG, Lindau I, Spicer WE. Evidence of palladium phosphide formation at the Pd/InP(110) interface Physical Review B. 28: 3618-3621. DOI: 10.1103/Physrevb.28.3618 |
0.574 |
|
| 1983 |
Shek ML, Stefan PM, Lindau I, Spicer WE. CO chemisorption on Cu adlayers on Pt(111) Physical Review B. 27: 7301-7312. DOI: 10.1103/Physrevb.27.7301 |
0.585 |
|
| 1983 |
Shek ML, Stefan PM, Lindau I, Spicer WE. Electronic structure of different Pt-Cu surfaces Physical Review B. 27: 7288-7300. DOI: 10.1103/Physrevb.27.7288 |
0.638 |
|
| 1983 |
Shek ML, Stefan PM, Lindau I, Spicer WE. Photoemission study of the adsorption of Cu on Pt(111) Physical Review B. 27: 7277-7287. DOI: 10.1103/Physrevb.27.7277 |
0.626 |
|
| 1983 |
Skeath P, Su CY, Harrison WA, Lindau I, Spicer WE. Bonding of antimony on GaAs(110): A prototypical system for adsorption of column-V elements on III-V compounds Physical Review B. 27: 6246-6262. DOI: 10.1103/Physrevb.27.6246 |
0.658 |
|
| 1983 |
Kendelewicz T, Petro WG, Babalola IA, Silberman JA, Lindau I, Spicer WE. Photoemission studies of the Cu-InP(110) interface Physical Review B. 27: 3366-3373. DOI: 10.1103/Physrevb.27.3366 |
0.611 |
|
| 1983 |
Weissman-Wenocur DL, Stefan PM, Pate BB, Shek ML, Lindau I, Spicer WE. Photoemission study of Au overlayers on Pd(111) and the formation of a Pd-Au(111) alloy surface Physical Review B. 27: 3308-3317. DOI: 10.1103/Physrevb.27.3308 |
0.588 |
|
| 1983 |
Raccah PM, Lee U, Silberman JA, Spicer WE, Wilson JA. Evidence of stress‐mediated Hg migration in Hg1−xCdxTe Applied Physics Letters. 42: 374-376. DOI: 10.1063/1.93944 |
0.335 |
|
| 1983 |
Rossi G, Abbati I, Braicovich L, Lindau I, Spicer WE, Pennino Ud, Nannarone S. Exploiting photon energy dependence in photoemission from Si(111)-Mo interface Physica B-Condensed Matter. 117: 794-797. DOI: 10.1016/0378-4363(83)90656-3 |
0.712 |
|
| 1983 |
Pate BB, Waclawski BJ, Stefan PM, Binns C, Ohta T, Hecht MH, Jupiter PJ, Shek ML, Pierce DT, Swanson N, Celotta RJ, Rossi G, Lindau I, Spicer WE. The diamond (111) surface: A dilemma resolved Physica B+C. 117: 783-785. DOI: 10.1016/0378-4363(83)90652-6 |
0.734 |
|
| 1983 |
Spicer WE, Silberman JA, Morgen P, Lindau I, Wilson JA, Sher A. Unusual behavior of Hgl−xCdxTe and its explanation☆ Physica B-Condensed Matter. 60-62. DOI: 10.1016/0378-4363(83)90440-0 |
0.594 |
|
| 1983 |
Su CY, Lindau I, Chye PW, Oh S-, Spicer WE. Photoemission studies of clean and oxidized Cs Journal of Electron Spectroscopy and Related Phenomena. 31: 221-259. DOI: 10.1016/0368-2048(83)85073-7 |
0.618 |
|
| 1983 |
Bachrach RZ, Swartz LE, Hagstrom SB, Lindau I, Hecht MH, Spicer WE. SSRL beam line wunder: Design and planning Nuclear Instruments and Methods in Physics Research. 208: 105-112. DOI: 10.1016/0167-5087(83)91109-2 |
0.569 |
|
| 1983 |
Shek ML, Stefan PM, Lindau I, Spicer WE. CO chemisorption on PtCu surfaces Surface Science Letters. 134. DOI: 10.1016/0167-2584(83)90724-7 |
0.623 |
|
| 1983 |
Shek ML, Stefan PM, Lindau I, Spicer WE. CO chemisorption on PtCu surfaces: III. CO on PtCu(111) Surface Science. 134: 438-448. DOI: 10.1016/0039-6028(83)90433-8 |
0.652 |
|
| 1983 |
Shek ML, Stefan PM, Lindau I, Spicer WE. Co chemisorption on PtCu surfaces II. (1 × 1)-CO/Pt0.98Cu0.02(110) Surface Science. 134: 427-437. DOI: 10.1016/0039-6028(83)90432-6 |
0.637 |
|
| 1983 |
Shek ML, Stefan PM, Lindau I, Spicer WE. CO chemisorption on PtCu surfaces. I: CO on (1×3) Pt0.98Cu0.02(110) Surface Science. 134: 399-426. DOI: 10.1016/0039-6028(83)90431-4 |
0.644 |
|
| 1983 |
Ling DT, Miller JN, Weissman DL, Pianetta P, Stefan PM, Lindau I, Spicer WE. An angle-resolved photoemission study of the chemisorption of chalcogens on Cu(100) III. Cu(100) + p(2 x 2)S Surface Science. 124: 175-187. DOI: 10.1016/0039-6028(83)90343-6 |
0.664 |
|
| 1983 |
Weissman-Wenocur DL, Shek ML, Stefan PM, Lindau I, Spicer WE. The temperature dependence of the interaction of oxygen with Pd(111); A study by photoemission and auger spectroscopy Surface Science. 127: 513-525. DOI: 10.1016/0039-6028(83)90044-4 |
0.619 |
|
| 1983 |
Oshima M, Pate BB, Lu ZM, Jupiter PJ, Lindau I, Spicer WE. Photoemission studies of a clean and oxidized niobium-aluminum alloy using synchrotron radiation Solid State Communications. 46: 815-818. DOI: 10.1016/0038-1098(83)90009-1 |
0.615 |
|
| 1982 |
Shek ML, Stefan PM, Weissman‐Wenocur DL, Pate BB, Lindau I, Spicer WE. Erratum: Surface segregation and surface electronic structure of PtCu alloys: Dependence on atomic coordination [J. Vac. Sci. Technol. 18, 533 (1981)] Journal of Vacuum Science and Technology. 21: 709-709. DOI: 10.1116/1.571818 |
0.638 |
|
| 1982 |
Rossi G, Abbati I, Braicovich L, Lindau I, Spicer WE. Summary Abstract: The Si(111)/Mo interface as studied with synchrotron radiation photoemission and Auger electron spectroscopies Journal of Vacuum Science and Technology. 21: 617-618. DOI: 10.1116/1.571798 |
0.709 |
|
| 1982 |
Petro WG, Babalola IA, Skeath P, Su CY, Hino I, Lindau I, Spicer WE. High Schottky barriers on and thermally induced processes at the Au– GaAs(110) interface Journal of Vacuum Science and Technology. 21: 585-589. DOI: 10.1116/1.571791 |
0.677 |
|
| 1982 |
Pate BB, Hecht MH, Binns C, Lindau I, Spicer WE. Photoemission and photon‐stimulated ion desorption studies of diamond(111): Hydrogen Journal of Vacuum Science and Technology. 21: 364-367. DOI: 10.1116/1.571781 |
0.629 |
|
| 1982 |
Ling DT, Miller JN, Pianetta P, Weissman DL, Lindau I, Spicer WE. Angle‐resolved photoemission studies of oxide formation on Cu(100) Journal of Vacuum Science and Technology. 21: 47-49. DOI: 10.1116/1.571734 |
0.626 |
|
| 1982 |
Morgen P, Silberman JA, Lindau I, Spicer WE, Wilson JA. AES sputter profiles of anodic oxide films on (Hg,Cd)Te Journal of Vacuum Science and Technology. 21: 161-163. DOI: 10.1116/1.571703 |
0.598 |
|
| 1982 |
Silberman JA, Morgen P, Lindau I, Spicer WE, Wilson JA. Room temperature stability of cleaved Hg1−xCdxTe Journal of Vacuum Science and Technology. 21: 154-156. DOI: 10.1116/1.571701 |
0.628 |
|
| 1982 |
Spicer WE, Silberman JA, Morgen P, Lindau I, Wilson JA. Surface And Interfaces Of Hgcdte. What Can We Learn From 3-5'S? What Is Unique With Hgcdte? Journal of Vacuum Science and Technology. 21: 149-153. DOI: 10.1116/1.571699 |
0.649 |
|
| 1982 |
Silberman JA, Morgen P, Lindau I, Spicer WE, Wilson JA. UPS study of the electronic structure of Hg1−xCdx Te: Breakdown of the virtual crystal approximation Journal of Vacuum Science and Technology. 21: 142-145. DOI: 10.1116/1.571697 |
0.653 |
|
| 1982 |
Silberman JA, Morgen P, Lindau I, Spicer WE, Chen A‐, Sher A, Wilson JA. Summary Abstract: Cation bonds in Hg1−xCdxTe Journal of Vacuum Science and Technology. 21: 467-468. DOI: 10.1116/1.571680 |
0.564 |
|
| 1982 |
Abbati I, Rossi G, Calliari L, Braicovich L, Lindau I, Spicer WE. Interaction of oxygen with silicon d‐metal interfaces: A photoemission investigation Journal of Vacuum Science and Technology. 21: 409-412. DOI: 10.1116/1.571666 |
0.718 |
|
| 1982 |
Petro WG, Hino I, Eglash S, Lindau I, Su CY, Spicer WE. Effect of low‐intensity laser radiation during oxidation of the GaAs(110) surface Journal of Vacuum Science and Technology. 21: 405-408. DOI: 10.1116/1.571665 |
0.629 |
|
| 1982 |
Skeath P, Su CY, Lindau I, Spicer WE. Summary Abstract: Structure of ordered Sb overlayers on GaAs(110) Journal of Vacuum Science and Technology. 20: 779-780. DOI: 10.1116/1.571458 |
0.594 |
|
| 1982 |
Stefan PM, Shek ML, Lindau I, Spicer WE, Herman F, Johansson LI, Brogren G. Summary Abstract: Angle‐resolved photoemission results from WC(0001) Journal of Vacuum Science and Technology. 20: 622-623. DOI: 10.1116/1.571407 |
0.59 |
|
| 1982 |
Shek ML, Stefan PM, Lindau I, Spicer WE. Summary Abstract: Metal core level shifts induced by CO chemisorption Journal of Vacuum Science and Technology. 20: 879-880. DOI: 10.1116/1.571374 |
0.604 |
|
| 1982 |
Spicer WE, Silberman JA, Morgen J, Lindau I, Wilson JA, Chen A, Sher A. Dominance of Atomic States in a Solid: Selective Breakdown of the Virtual Crystal Approximation in a Semiconductor Alloy,Hg1−xCdxTe Physical Review Letters. 49: 948-951. DOI: 10.1103/Physrevlett.49.948 |
0.589 |
|
| 1982 |
Su CY, Lindau I, Chye PW, Skeath PR, Spicer WE. Photoemission studies of the interaction of oxygen with GaAs(110) Physical Review B. 25: 4045-4068. DOI: 10.1103/Physrevb.25.4045 |
0.6 |
|
| 1982 |
Rossi G, Abbati I, Braicovich L, Lindau I, Spicer WE. Si(111)-Pt interface at room temperature: A synchrotron radiation photoemission study Physical Review B. 25: 3627-3636. DOI: 10.1103/Physrevb.25.3627 |
0.697 |
|
| 1982 |
Rossi G, Abbati I, Braicovich L, Lindau I, Spicer WE. Ge-Ag interface at room temperature: An energy-dependent photoemission study Physical Review B. 25: 3619-3626. DOI: 10.1103/Physrevb.25.3619 |
0.696 |
|
| 1982 |
Bisi O, Calandra C, Braicovich L, Abbati I, Rossi G, Lindau I, Spicer WE. Electronic properties of metal-rich Au-Si compounds and interfaces Journal of Physics C: Solid State Physics. 15: 4707-4716. DOI: 10.1088/0022-3719/15/22/016 |
0.725 |
|
| 1982 |
Miller JN, Lindau I, Stefan PM, Weissman DL, Shek ML, Spicer WE. Photoemission studies of clean and oxidized Nb and Nb3Sn Journal of Applied Physics. 53: 3267-3271. DOI: 10.1063/1.331030 |
0.66 |
|
| 1982 |
Rossi G, Abbati I, Lindau I, Spicer WE. Intermixing at the early stage of the Si(111)/Ag interface growth Applications of Surface Science. 11: 348-354. DOI: 10.1016/0378-5963(82)90081-2 |
0.709 |
|
| 1982 |
Chen DS, Lindau I, Hecht MH, Viescas AJ, Nogami J, Spicer WE. Surface studies of the tungsten dispenser cathode Applications of Surface Science. 13: 321-328. DOI: 10.1016/0378-5963(82)90001-0 |
0.634 |
|
| 1982 |
Miller JN, Lindau I, Spicer WE. A photoemission study of clean and oxidized Nb3Sn Physics Letters A. 88: 97-99. DOI: 10.1016/0375-9601(82)90601-6 |
0.613 |
|
| 1982 |
Shek ML, Stefan PM, Weissman-Wenocur DL, Pate BB, Lindau I, Spicer WE, Sundaram VS. Surface segregation and surface electronic interactions in PtCu Surface Science Letters. 115. DOI: 10.1016/0167-2584(82)90533-3 |
0.66 |
|
| 1982 |
Shek ML, Stefan PM, Binns C, Lindau I, Spicer WE. Chemisorption-induced Pt 4f surface core level shifts Surface Science. 115. DOI: 10.1016/0167-2584(82)90532-1 |
0.639 |
|
| 1982 |
Eglash S, Spicer WE, Lindau I. Reply to “surface photovoltage measurements and Fermi level pinning: comments on ‘development and confirmation of the unified model for Schottky barrier formation and MOS interface states on III-V compounds’” Thin Solid Films. 89. DOI: 10.1016/0040-6090(82)90329-7 |
0.619 |
|
| 1982 |
Spicer WE, Eglash S, Lindau I, Su CY, Skeath PR. Development and confirmation of the unified model for Schottky barrier formation and MOS interface states on III-V compounds Thin Solid Films. 89: 447-460. DOI: 10.1016/0040-6090(82)90325-X |
0.705 |
|
| 1982 |
Shek ML, Stefan PM, Weissman-Wenocur DL, Pate BB, Lindau I, Spicer WE, Sundaram VS. Surface science lettersSurface segregation and surface electronic interactions in PtCu Surface Science. 115. DOI: 10.1016/0039-6028(82)90656-2 |
0.66 |
|
| 1982 |
Shek ML, Stefan PM, Binns C, Lindau I, Spicer WE. Surface science lettersChemisorption-induced Pt 4f surface core level shifts Surface Science. 115. DOI: 10.1016/0039-6028(82)90655-0 |
0.642 |
|
| 1982 |
Rossi G, Caliari L, Abbati I, Braicovich L, Lindau I, Spicer WE. Photoemission investigation on the oxidation of Si(111)Ag interfaces and its relation to the interface structure Surface Science. 116. DOI: 10.1016/0039-6028(82)90422-8 |
0.719 |
|
| 1982 |
Su CY, Lindau I, Skeath PR, Hino I, Spicer WE. Photoemission studies of As and its room-temperature oxidation Surface Science Letters. 118: 257-266. DOI: 10.1016/0039-6028(82)90027-9 |
0.621 |
|
| 1982 |
Su CY, Skeath PR, Lindau I, Spicer WE. Photoemission studies of room-temperature oxidized Ga surfaces☆ Surface Science. 118: 248-256. DOI: 10.1016/0039-6028(82)90026-7 |
0.629 |
|
| 1982 |
Binns C, Norris C, Lindau I, Shek ML, Pate B, Stefan PM, Spicer WE. Magnetic behaviour of ultra-thin iron overlayers on palladium (111) Solid State Communications. 43: 853-855. DOI: 10.1016/0038-1098(82)90854-7 |
0.58 |
|
| 1982 |
Skeath P, Su CY, Lindau I, Spicer WE. Experimental determination of the bonding of column 3 and 5 elements on GaAs Journal of Crystal Growth. 56: 505-510. DOI: 10.1016/0022-0248(82)90472-9 |
0.608 |
|
| 1982 |
Morgen P, Silberman JA, Lindau I, Spicer WE, Wilson JA. Oxidation of Hg 1−x Cd x Te studied with surface sensitive techniques Journal of Electronic Materials. 11: 597-610. DOI: 10.1007/Bf02672386 |
0.637 |
|
| 1981 |
Skeath P, Lindau I, Su CY, Spicer WE. Models of column III and V elements on GaAs (110): Application to MBE Journal of Vacuum Science and Technology. 19: 556-560. DOI: 10.1116/1.571125 |
0.606 |
|
| 1981 |
Abbati I, Rossi G, Lindau I, Spicer WE. Exploiting energy‐dependent photoemission in Si d‐metal interfaces: The Si(111)–Pd case Journal of Vacuum Science and Technology. 19: 636-640. DOI: 10.1116/1.571077 |
0.7 |
|
| 1981 |
Pate BB, Stefan PM, Binns C, Jupiter PJ, Shek ML, Lindau I, Spicer WE. Formation of surface states on the (111) surface of diamond Journal of Vacuum Science and Technology. 19: 349-354. DOI: 10.1116/1.571062 |
0.67 |
|
| 1981 |
Su CY, Skeath PR, Lindau I, Spicer WE. Possible oxygen chemisorption configurations on the Si(lll) 2×1 surface Journal of Vacuum Science and Technology. 19: 481-486. DOI: 10.1116/1.571043 |
0.672 |
|
| 1981 |
Su CY, Skeath PR, Lindau I, Spicer WE. Oxidation of Si(111), 7×7 and 2×1: A comparison Journal of Vacuum Science and Technology. 18: 843-846. DOI: 10.1116/1.570974 |
0.65 |
|
| 1981 |
Shek ML, Stefan PM, Weissman‐Wenocur DL, Pate BB, Lindau I, Spicer WE. Surface segregation and surface electronic structure of PtCu alloys: Dependence on atomic coordination Journal of Vacuum Science and Technology. 18: 533-536. DOI: 10.1116/1.570805 |
0.648 |
|
| 1981 |
Miller JN, Ling DT, Stefan PM, Weissman DL, Shek ML, Lindau I, Spicer WE. Synchrotron radiation studies of CO and H 2 O adsorbed on Pt Physical Review B. 24: 1917-1926. DOI: 10.1103/Physrevb.24.1917 |
0.575 |
|
| 1981 |
Miller JN, Lindau I, Spicer WE. Absence of band-gap surface states on clean amorphous silicon Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 43: 273-282. DOI: 10.1080/13642818108221898 |
0.674 |
|
| 1981 |
Skeath P, Su CY, Hino I, Lindau I, Spicer WE. New Fermi energy pinning behavior of Au on GaAs (110) suggesting increased Schottky‐barrier heights on n‐type GaAs Applied Physics Letters. 39: 349-351. DOI: 10.1063/1.92718 |
0.668 |
|
| 1981 |
Abbati I, Rossi G, Braicovich L, Lindau I, Spicer WE, Michelis BD. Pd2Si surfaces thermally enriched in silicon: Evidence of new Si:Pd bonds Journal of Applied Physics. 52: 6994-6996. DOI: 10.1063/1.328665 |
0.707 |
|
| 1981 |
Abbati I, Rossi G, Braicovich L, Lindau I, Spicer WE. Reactive germanium/transition metal interfaces investigated with synchrotron radiation photoemission: Ge/Ni and Ge/Pd Applications of Surface Science. 9: 243-249. DOI: 10.1016/0378-5963(81)90040-4 |
0.723 |
|
| 1981 |
Spicer WE, Lindau I, Skeath PR, Su CY. The unified model for Schottky barrier formation and MOS interface states in 3–5 compounds☆ Applications of Surface Science. 9: 83-91. DOI: 10.1016/0378-5963(81)90027-1 |
0.665 |
|
| 1981 |
Su CY, Skeath PR, Lindau I, Spicer WE. The nature of the 7×7 reconstruction of Si(111): As revealed by changes in oxygen sorption from 2 × 1 to 7×7☆ Surface Science Letters. 107. DOI: 10.1016/0167-2584(81)90242-5 |
0.628 |
|
| 1981 |
Rossi G, Abbati I, Braicovich L, Lindau I, Spicer WE. Chemical reaction at the Ge(111)-Ag and Si(111)-Ag interfaces for small Ag coverages Surface Science Letters. 112. DOI: 10.1016/0167-2584(81)90027-X |
0.686 |
|
| 1981 |
Miller JN, Lindau I, Spicer WE. Photoemission of adsorbed CO and H2O on Pt: Valence band studies Surface Science. 111: 595-608. DOI: 10.1016/0039-6028(81)90411-8 |
0.645 |
|
| 1981 |
Rossi G, Abbati I, Braicovich L, Lindau I, Spicer WE. Surface science lettersChemical reaction at the Ge(111)-Ag and Si(111)-Ag interfaces for small Ag coverages Surface Science. 112. DOI: 10.1016/0039-6028(81)90325-3 |
0.537 |
|
| 1981 |
Rossi G, Abbati I, Braicovich L, Lindau I, Spicer WE. Nature of the valence states in silicon transition metal interfaces Solid State Communications. 39: 195-198. DOI: 10.1016/0038-1098(81)90655-4 |
0.722 |
|
| 1981 |
Skeath P, Su CY, Lindau I, Spicer WE. Bonding of column 3 and 5 atoms on GaAs (110) Solid State Communications. 40: 873-876. DOI: 10.1016/0038-1098(81)90174-5 |
0.628 |
|
| 1980 |
Ling D, Lindau I, Miller J, Spicer W. Surface Composition of Copper-Nickel Alloys Astm Special Technical Publications. 66-80. DOI: 10.1520/Stp38653S |
0.638 |
|
| 1980 |
Su CY, Lindau I, Skeath PR, Chye PW, Spicer WE. Oxygen adsorption on the GaAs(110) surface Journal of Vacuum Science and Technology. 17: 936-941. DOI: 10.1116/1.570620 |
0.645 |
|
| 1980 |
Abbati I, Braicovich L, Franciosi A, Lindau I, Skeath PR, Su CY, Spicer WE. Photoemission investigation of the temperature effect on Si–Au interfaces Journal of Vacuum Science and Technology. 17: 930-935. DOI: 10.1116/1.570619 |
0.655 |
|
| 1980 |
Miller JN, Schwarz SA, Lindau I, Spicer WE, Michelis BD, Abbati I, Braicovich L. Si–Pd and Si–Pt interfaces Journal of Vacuum Science and Technology. 17: 920-923. DOI: 10.1116/1.570617 |
0.637 |
|
| 1980 |
Skeath P, Su CY, Lindau I, Spicer WE. Column III and V elements on GaAs (110): Bonding and adatom‐adatom interaction Journal of Vacuum Science and Technology. 17: 874-879. DOI: 10.1116/1.570608 |
0.655 |
|
| 1980 |
Pate BB, Spicer WE, Ohta T, Lindau I. Electronic structure of the diamond (111) 1×1 surface: Valence‐band structure, band bending, and band gap states Journal of Vacuum Science and Technology. 17: 1087-1093. DOI: 10.1116/1.570596 |
0.684 |
|
| 1980 |
Spicer WE, Lindau I, Skeath P, Su CY. Unified defect model and beyond Journal of Vacuum Science and Technology. 17: 1019-1027. DOI: 10.1116/1.570583 |
0.67 |
|
| 1980 |
Braicovich L, Abbati I, Miller JN, Lindau I, Schwarz S, Skeath PR, Su CY, Spicer WE. Systematics on the electron states of silicon d‐metal interfaces Journal of Vacuum Science and Technology. 17: 1005-1008. DOI: 10.1116/1.570581 |
0.632 |
|
| 1980 |
Spicer WE, Chye PW, Skeath PR, Su CY, Lindau I. Erratum: New and unified model for Schottky barrier and III–V insulator interface states formation [J. Vac. Sci. Technol. 16, 1422 (1979)] Journal of Vacuum Science and Technology. 17: 666-666. DOI: 10.1116/1.570540 |
0.607 |
|
| 1980 |
Skeath P, Lindau I, Su CY, Chye PW, Spicer WE. Bonding of Al and Ga to GaAs(110) Journal of Vacuum Science and Technology. 17: 511-516. DOI: 10.1116/1.570497 |
0.649 |
|
| 1980 |
Spicer WE, Lindau I, Skeath P, Su CY, Chye P. Unified Mechanism for Schottky-Barrier Formation and III-V Oxide Interface States Physical Review Letters. 44: 420-423. DOI: 10.1103/Physrevlett.44.420 |
0.599 |
|
| 1980 |
Braicovich L, Rossi G, Powell RA, Spicer WE. Oxidation of cadmium: An ultraviolet-photoemission and electron-energy-loss investigation Physical Review B. 21: 3539-3544. DOI: 10.1103/Physrevb.21.3539 |
0.589 |
|
| 1980 |
Ling DT, Miller JN, Stefan PM, Lindau I, Spicer WE. Direct transition and matrix element effects in the ultraviolet-photoemission-spectroscopy spectra of Cu-Ni (110) Physical Review B. 21: 1417-1420. DOI: 10.1103/Physrevb.21.1417 |
0.602 |
|
| 1980 |
Miller JN, Ling DT, Shek ML, Weissman DL, Stefan PM, Lindau I, Spicer WE. Photoemission studies of clean and oxygen-covered Pt 6(111) × (100)☆ Surface Science Letters. 94: 16-28. DOI: 10.1016/0167-2584(80)90331-X |
0.639 |
|
| 1980 |
Ling DT, Miller JN, Weissman DL, Pianetta P, Johansson LI, Lindau I, Spicer WE. An angle-resolved photoemission study of the chemisorption of chalcogens on Cu(100): I. The clean surface Surface Science Letters. 92: 350-364. DOI: 10.1016/0167-2584(80)90079-1 |
0.677 |
|
| 1980 |
Lindau I, Skeath PR, Su CY, Spicer WE. The interaction of thin Au and Al overlayers with the GaAs(110) surface Surface Science. 99: 192-201. DOI: 10.1016/0039-6028(80)90589-0 |
0.671 |
|
| 1980 |
Weissman DL, Shek ML, Spicer WE. Photoemission spectra and thermal desorption characteristics of two states of oxygen on Pd Surface Science. 92. DOI: 10.1016/0039-6028(80)90204-6 |
0.366 |
|
| 1980 |
Ling DT, Miller JN, Weissman DL, Pianetta P, Stefan PM, Lindau I, Spicer WE. An angle-resolved photoemission study of the chemisorption of chalcogens on Cu(100) Surface Science Letters. 92: 350-364. DOI: 10.1016/0039-6028(80)90130-2 |
0.591 |
|
| 1980 |
Ling DT, Spicer WE. UPS and TDS studies of the adsorption of CO and H2 on Cu Ni Surface Science. 94: 403-423. DOI: 10.1016/0039-6028(80)90015-1 |
0.335 |
|
| 1979 |
Skeath P, Su CY, Chye PW, Pianetta P, Lindau I, Spicer WE. Comparative studies of oxygen adsorption on GaAs(110) surfaces with ultrathin aluminum and cesium overlayers Journal of Vacuum Science and Technology. 16: 1439-1442. DOI: 10.1116/1.570217 |
0.675 |
|
| 1979 |
Spicer WE, Chye PW, Skeath PR, Su CY, Lindau I. New and unified model for Schottky barrier and III–V insulator interface states formation Journal of Vacuum Science and Technology. 16: 1422-1433. DOI: 10.1116/1.570215 |
0.696 |
|
| 1979 |
Chye PW, Su CY, Lindau I, Skeath P, Spicer WE. Oxidation of ordered and disordered GaAs(110) Journal of Vacuum Science and Technology. 16: 1191-1194. DOI: 10.1116/1.570188 |
0.635 |
|
| 1979 |
Skeath P, Lindau I, Chye PW, Su CY, Spicer WE. Investigation of the mechanism for Schottky barrier formation by group III metals on GaAs(110) Journal of Vacuum Science and Technology. 16: 1143-1148. DOI: 10.1116/1.570178 |
0.661 |
|
| 1979 |
Stefan PM, Helms CR, Perino SC, Spicer WE. UPS Studies of H2, O2, and CO adsorption on ordered carbon overlayers on W(100) Journal of Vacuum Science and Technology. 16: 577-580. DOI: 10.1116/1.570002 |
0.323 |
|
| 1979 |
Braicovich L, Garner CM, Skeath PR, Su CY, Chye PW, Lindau I, Spicer WE. Photoemission studies of the silicon-gold interface Physical Review B. 20: 5131-5141. DOI: 10.1103/Physrevb.20.5131 |
0.668 |
|
| 1979 |
Garner CM, Lindau I, Su CY, Pianetta P, Spicer WE. Electron-spectroscopic studies of the early stages of the oxidation of Si Physical Review B. 19: 3944-3956. DOI: 10.1103/Physrevb.19.3944 |
0.671 |
|
| 1979 |
Johannessen JS, Spicer WE, Strausser YE. LVV Spectra of Si, SiO2 and Si3N4 Physica Scripta. 19: 355-359. DOI: 10.1088/0031-8949/19/4/012 |
0.328 |
|
| 1979 |
Helms CR, Johnson NM, Schwarz SA, Spicer WE. Studies of the effect of oxidation time and temperature on the Si‐SiO2 interface using Auger sputter profiling Journal of Applied Physics. 50: 7007-7014. DOI: 10.1063/1.325858 |
0.348 |
|
| 1979 |
Lindau I, Spicer WE. Photoelectron spectroscopy in the energy region 30 to 800 eV using synchrotron radiation Journal of Electron Spectroscopy and Related Phenomena. 15: 295-306. DOI: 10.1016/0368-2048(79)87047-4 |
0.673 |
|
| 1979 |
Lindau I, Spicer WE, Pianetta P, Chye PW, Garner CM. Ad-atom interactions with III-V semiconductor surfaces Journal of Electron Spectroscopy and Related Phenomena. 15: 197-200. DOI: 10.1016/0368-2048(79)87032-2 |
0.685 |
|
| 1979 |
Skeath P, Lindau I, Pianetta P, Chye PW, Su CY, Spicer WE. Photoemission study of the interaction of Al with a GaAs (110) surface Journal of Electron Spectroscopy and Related Phenomena. 17: 259-265. DOI: 10.1016/0368-2048(79)80016-X |
0.645 |
|
| 1979 |
Spicer WE, Lindau I, Pianetta P, Chye PW, Garner CM. Fundamental studies of III-V surfaces and the (III-V)-oxide interface Thin Solid Films. 56: 1-18. DOI: 10.1016/0040-6090(79)90048-8 |
0.66 |
|
| 1979 |
Kahn A, Kanani D, Mark P, Chye PW, Su CY, Lindau I, Spicer WE. Order-disorder effects in GaAs(110)-oxygen interaction: A LEED-ups analysis Surface Science. 87: 325-332. DOI: 10.1016/0039-6028(79)90532-6 |
0.631 |
|
| 1979 |
Su CY, Chye PW, Pianetta P, Lindau I, Spicer WE. Oxygen adsorption on Cs covered GaAs(110) surfaces Surface Science. 86: 894-899. DOI: 10.1016/0039-6028(79)90472-2 |
0.638 |
|
| 1979 |
Spicer WE, Chye PW, Garner CM, Lindau I, Pianetta P. The surface electronic structure of 3-5 compounds and the mechanism of Fermi level pinning by oxygen (passivation) and metals (Schottky barriers) Surface Science. 86: 763-788. DOI: 10.1016/0039-6028(79)90458-8 |
0.699 |
|
| 1979 |
Chye PW, Su CY, Lindau I, Garner CM, Pianetta P, Spicer WE. Photoemission studies of the initial stages of oxidation of GaSb and InP Surface Science. 88: 439-460. DOI: 10.1016/0039-6028(79)90085-2 |
0.641 |
|
| 1978 |
Pianetta P, Lindau I, Spicer WE. The Use of Soft X-Ray Photoemission Spectroscopy to Study the Adsorption of Oxygen on the (110) Surface of Gallium Arsenide and Gallium Antimonide Astm Special Technical Publications. 105-123. DOI: 10.1520/Stp25603S |
0.67 |
|
| 1978 |
Schwarz SA, Helms CR, Spicer WE, Taylor NJ. Abstract: Auger–sputter profiling study of phosphorus pileup at the Si–SiO2 interface Journal of Vacuum Science and Technology. 15: 1519-1519. DOI: 10.1116/1.569778 |
0.301 |
|
| 1978 |
Garner CM, Shen YD, Su CY, Pearson GL, Spicer WE. Auger profiling studies of LPE n‐AlxGa1−xAs–n‐GaAs heterojunctions and the absence of rectification Journal of Vacuum Science and Technology. 15: 1480-1482. DOI: 10.1116/1.569770 |
0.374 |
|
| 1978 |
Lindau I, Chye PW, Garner CM, Pianetta P, Su CY, Spicer WE. New phenomena in Schottky barrier formation on III–V compounds Journal of Vacuum Science and Technology. 15: 1332-1339. DOI: 10.1116/1.569761 |
0.689 |
|
| 1978 |
Garner CM, Lindau I, Su CY, Pianetta P, Spicer WE. Abstract: Bonding states of oxygen on silicon Journal of Vacuum Science and Technology. 15: 1290-1291. DOI: 10.1116/1.569755 |
0.601 |
|
| 1978 |
Skeath P, Saperstein WA, Pianetta P, Lindau I, Spicer WE, Mark P. UPS and LEED studies of GaAs (110) and (111) As surfaces Journal of Vacuum Science and Technology. 15: 1219-1222. DOI: 10.1116/1.569696 |
0.651 |
|
| 1978 |
Ling DT, Miller JN, Pianetta PA, Weissman DL, Lindau I, Spicer WE. Abstract: Adsorption of oxygen on Cu(100)−A study by angularly resolved ultraviolet photoemission spectroscopy (ARUPS) Journal of Vacuum Science and Technology. 15: 495-496. DOI: 10.1116/1.569605 |
0.615 |
|
| 1978 |
Schwarz SA, Helms CR, Spicer WE, Taylor NJ. High resolution Auger sputter profiling study of the effect of phosphorus pileup on the Si–SiO2 interface morphology Journal of Vacuum Science and Technology. 15: 227-230. DOI: 10.1116/1.569485 |
0.388 |
|
| 1978 |
Garner CM, Lindau I, Su CY, Pianetta P, Miller JN, Spicer WE. New phenomenon in the absorption of oxygen on silicon Physical Review Letters. 40: 403-406. DOI: 10.1103/Physrevlett.40.403 |
0.648 |
|
| 1978 |
Chye PW, Lindau I, Pianetta P, Garner CM, Su CY, Spicer WE. Photoemission study of Au Schottky-barrier formation on GaSb, GaAs, and InP using synchrotron radiation Physical Review B. 18: 5545-5559. DOI: 10.1103/Physrevb.18.5545 |
0.659 |
|
| 1978 |
Pianetta P, Lindau I, Garner CM, Spicer WE. Chemisorption and oxidation studies of the (110) surfaces of GaAs, GaSb, and InP Physical Review B. 18: 2792-2806. DOI: 10.1103/Physrevb.18.2792 |
0.662 |
|
| 1978 |
Chye PW, Lindau I, Pianetta P, Garner CM, Spicer WE. Evidence for a new type of metal-semiconductor interaction on GaSb Physical Review B. 17: 2682-2684. DOI: 10.1103/Physrevb.17.2682 |
0.645 |
|
| 1978 |
Spicer WE, Lindau I, Su CY, Chye PW, Pianetta P. Core-level photoemission of the Cs-O adlayer of NEA GaAs cathodes Applied Physics Letters. 33: 934-935. DOI: 10.1063/1.90223 |
0.636 |
|
| 1978 |
Johannessen JS, Spicer WE, Gibbons JF, Plummer JD, Taylor NJ. Observation of phosphorus pile‐up at the SiO2‐Si interface Journal of Applied Physics. 49: 4453-4458. DOI: 10.1063/1.325502 |
0.322 |
|
| 1978 |
Lindau I, Pianetta P, Spicer WE, Gregory PE, Garner CM, Chye PW. Oxygen adsorption and the surface electronic structure of GaAs (110) Journal of Electron Spectroscopy and Related Phenomena. 13: 155-160. DOI: 10.1016/0368-2048(78)85023-3 |
0.654 |
|
| 1978 |
Pianetta P, Lindau I, Gregory PE, Garner CM, Spicer WE. Valence band studies of clean and oxygen exposed GaAs(100) surfaces Surface Science. 72: 298-320. DOI: 10.1016/0039-6028(78)90297-2 |
0.67 |
|
| 1978 |
Miller JN, Ling DT, Lindau I, Collins DM, Spicer WE. Comments on UPS studies of oxygen chemisorbed on group VIII transition metal surfaces Surface Science. 77. DOI: 10.1016/0039-6028(78)90149-8 |
0.628 |
|
| 1978 |
Ling DT, Miller JN, Lindau I, Spicer WE, Stefan PM. Oscillations in the compositional depth profile of Cu/Ni alloys: A study by UPS Surface Science. 74: 612-620. DOI: 10.1016/0039-6028(78)90017-1 |
0.645 |
|
| 1978 |
Helms CR, Spicer WE, Johnson NM. New studies of the Si-SiO2 interface using auger sputter profiling Solid State Communications. 25: 673-676. DOI: 10.1016/0038-1098(78)90787-1 |
0.358 |
|
| 1977 |
Garner CM, Shen YD, Kim JS, Pearson GL, Spicer WE, Harris JS, Edwall DD, Sahai R. Auger depth profiling of Au–AlxGa1−xAs interfaces and LPE AlxGa1−xAs–GaAs heterojunctions Journal of Vacuum Science and Technology. 14: 985-988. DOI: 10.1116/1.569408 |
0.344 |
|
| 1977 |
Chye PW, Pianetta P, Lindau I, Spicer WE. Oxygen sorption and excitonic effects on GaAs surfaces Journal of Vacuum Science and Technology. 14: 917-919. DOI: 10.1116/1.569328 |
0.664 |
|
| 1977 |
Spicer WE, Pianetta P, Lindau I, Chye PW. Surface and interface states on GaAs(110): Effects of atomic and electronic rearrangements Journal of Vacuum Science and Technology. 14: 885-893. DOI: 10.1116/1.569323 |
0.689 |
|
| 1977 |
Garner CM, Lindau I, Miller JN, Pianetta P, Spicer WE. Photoemission studies of the surface states and oxidation of group IV semiconductors Journal of Vacuum Science and Technology. 14: 372-375. DOI: 10.1116/1.569210 |
0.67 |
|
| 1977 |
Halms CR, Garner CM, Miller J, Lindau I, Schwarz S, Spicer WE. IVa-6 studies of Si/SiO 2 interfaces by Auger sputter profiling and photoelectron spectroscopy using synchrotron radiation Ieee Transactions On Electron Devices. 24: 1208-1208. DOI: 10.1109/T-Ed.1977.18955 |
0.331 |
|
| 1977 |
Johannessen JS, Helms CR, Spicer WE, Strausser YE. Auger depth profiling of MNOS structures by ion sputtering Ieee Transactions On Electron Devices. 24: 547-551. DOI: 10.1109/T-Ed.1977.18776 |
0.301 |
|
| 1977 |
Miller JN, Ling DT, Lindau I, Stefan PM, Spicer WE. Differential Relaxation Effects and Multielectron Excitation for Molecularly Chemisorbed CO on Platinum Physical Review Letters. 38: 1419-1422. DOI: 10.1103/Physrevlett.38.1419 |
0.655 |
|
| 1977 |
Pianetta P, Lindau I, Garner CM, Spicer WE. Reply to "oxidation properties of GaAs (110) surfaces" by R. Ludeke Physical Review B. 16: 5600-5602. DOI: 10.1103/Physrevb.16.5600 |
0.669 |
|
| 1977 |
Chye PW, Sukegawa T, Babalola IA, Sunami H, Gregory P, Spicer WE. Surface and interface states of GaSb: A photoemission study Physical Review B. 15: 2118-2126. DOI: 10.1103/Physrevb.15.2118 |
0.446 |
|
| 1977 |
Yu KY, Helms CR, Spicer WE, Chye PW. Photoemission studies of the surface and bulk electronic structure of the Cu-Ni alloys Physical Review B. 15: 1629-1639. DOI: 10.1103/Physrevb.15.1629 |
0.354 |
|
| 1977 |
Spicer WE, Lindau I, Miller JN, Ling DT, Pianetta P, Chye PW, Garner CM. Studies of surface electronic structure and surface chemistry using synchrotron radiation Physica Scripta. 16: 388-397. DOI: 10.1088/0031-8949/16/5-6/037 |
0.678 |
|
| 1977 |
Chye PW, Lindau I, Pianetta P, Garner CM, Spicer WE. Do the Au 5d-bands narrow at the surface: Comparison with Au alloys Physics Letters A. 63: 387-389. DOI: 10.1016/0375-9601(77)90941-0 |
0.655 |
|
| 1977 |
Lindau I, Pianetta P, Garner CM, Chye PW, Gregory PE, Spicer WE. Photoemission studies of the electronic structure of III-V semiconductor surfaces Surface Science. 63: 45-55. DOI: 10.1016/0039-6028(77)90325-9 |
0.69 |
|
| 1977 |
Collins DM, Spicer WE. The adsorption of CO, O2, and H2 on Pt: II. Ultraviolet photoelectron spectroscopy studies☆ Surface Science. 69: 114-132. DOI: 10.1016/0039-6028(77)90164-9 |
0.347 |
|
| 1977 |
Collins DM, Spicer WE. The adsorption of CO, O2, and H2 on Pt: I. Thermal desorption spectroscopy studies☆ Surface Science. 69: 85-113. DOI: 10.1016/0039-6028(77)90163-7 |
0.353 |
|
| 1977 |
Mark P, Pianetta P, Lindau I, Spicer WE. A comparison of LEED intensity data from chemically polished and cleaved GaAs(110) surfaces Surface Science. 69: 735-740. DOI: 10.1016/0039-6028(77)90151-0 |
0.624 |
|
| 1976 |
Johannessen JS, Spicer WE, Strausser YE. Auger depth profiling of interfaces in MOS and MNOS structures Journal of Vacuum Science and Technology. 13: 849-855. DOI: 10.1116/1.569002 |
0.366 |
|
| 1976 |
Spicer WE, Lindau I, Gregory PE, Garner CM, Pianetta P, Chye PW. Synchrotron radiation studies of electronic structure and surface chemistry of GaAs, GaSb, and InP Journal of Vacuum Science and Technology. 13: 780-785. DOI: 10.1116/1.568989 |
0.664 |
|
| 1976 |
Yu KY, Spicer WE, Lindau I, Pianetta P, Lin SF. Relationship of heat of chemisorption to π‐ and σ‐level shifts as measured by photoemission Journal of Vacuum Science and Technology. 13: 277-279. DOI: 10.1116/1.568869 |
0.585 |
|
| 1976 |
Lindau I, Pianetta P, Yu KY, Spicer WE. Photoemission from some metals and semiconductors in the energy range 5–350 eV Journal of Vacuum Science and Technology. 13: 269-272. DOI: 10.1116/1.568866 |
0.667 |
|
| 1976 |
Spicer WE, Chye PW, Gregory PE, Sukegawa T, Babalola IA. Photoemission studies of surface and interface states on III–V compounds Journal of Vacuum Science and Technology. 13: 233-240. DOI: 10.1116/1.568858 |
0.413 |
|
| 1976 |
Pianetta P, Lindau I, Garner CM, Spicer WE. Oxidation properties of GaAs (110) surfaces Physical Review Letters. 37: 1166-1169. DOI: 10.1103/Physrevlett.37.1166 |
0.648 |
|
| 1976 |
Gregory PE, Spicer WE. Photoemission study of surface states of the (110) GaAs surface Physical Review B. 13: 725-738. DOI: 10.1103/Physrevb.13.725 |
0.408 |
|
| 1976 |
Lindau I, Pianetta P, Yu KY, Spicer WE. Photoemission of gold in the energy range 30-300 eV using synchrotron radiation Physical Review B. 13: 492-495. DOI: 10.1103/Physrevb.13.492 |
0.637 |
|
| 1976 |
Chye PW, Babalola IA, Sukegawa T, Spicer WE. Photoemission studies of surface states and Schottky-barrier formation on Inp Physical Review B. 13: 4439-4446. DOI: 10.1103/Physrevb.13.4439 |
0.368 |
|
| 1976 |
Taylor NJ, Johannessen JS, Spicer WE. Crater‐edge profiling in interface analysis employing ion‐beam etching and AES Applied Physics Letters. 29: 497-499. DOI: 10.1063/1.89136 |
0.329 |
|
| 1976 |
Johannessen JS, Spicer WE, Strausser YE. An Auger analysis of the SiO2‐Si interface Journal of Applied Physics. 47: 3028-3037. DOI: 10.1063/1.323047 |
0.364 |
|
| 1976 |
Gregory PE, Spicer WE. Ultraviolet photoemission study of cesium oxide films on GaAs Journal of Applied Physics. 47: 510-517. DOI: 10.1063/1.322652 |
0.361 |
|
| 1976 |
Helms CR, Spicer WE. The importance of the surface density of states in the photoemission spectra of the alkali and alkaline earth metals Physics Letters A. 57: 369-371. DOI: 10.1016/0375-9601(76)90614-9 |
0.418 |
|
| 1976 |
Lindau I, Pianetta P, Spicer WE. The energy dependence of the 4d photoionization cross-section of In and Sb Physics Letters A. 57: 225-226. DOI: 10.1016/0375-9601(76)90044-X |
0.593 |
|
| 1976 |
Lindau I, Pianetta P, Yu KY, Spicer WE. Determination of the escape depth of photoemitted electrons in gold in the energy range 25–75 eV by use of synchrotron radiation Journal of Electron Spectroscopy and Related Phenomena. 8: 487-491. DOI: 10.1016/0368-2048(76)80036-9 |
0.605 |
|
| 1976 |
Powell RA, Spicer WE. Photoemission study of oxygen chemisorption on tin Surface Science. 55: 681-689. DOI: 10.1016/0039-6028(76)90264-8 |
0.365 |
|
| 1976 |
Collins DM, Lee JB, Spicer WE. A photoemission and thermal desorption study of carbon monoxide and oxygen adsorbed on platinum Surface Science. 55: 389-402. DOI: 10.1016/0039-6028(76)90247-8 |
0.326 |
|
| 1976 |
Gregory PE, Spicer WE. Photoemission study of the adsorption of O2, CO and H2 on GaAs(110) Surface Science. 54: 229-258. DOI: 10.1016/0039-6028(76)90223-5 |
0.394 |
|
| 1976 |
Yu KY, Spicer WE, Lindau I, Pianetta P, Lin SF. UPS studies of the bonding of H2, O2, CO, C2H4 and C2H2 on Fe and Cu☆ Surface Science. 57: 157-183. DOI: 10.1016/0039-6028(76)90175-8 |
0.624 |
|
| 1976 |
Yu KY, Helms CR, Spicer WE. The effect of surface composition on the surface electronic structure of the CuNi alloys: A study by UPS Solid State Communications. 18: 1365-1368. DOI: 10.1016/0038-1098(76)90979-0 |
0.38 |
|
| 1976 |
Yu KY, Ling DT, Spicer WE. “Long” and “short” range electronic effects in the bonding of CO and H2 on CuNi alloy☆ Solid State Communications. 20: 751-754. DOI: 10.1016/0038-1098(76)90287-8 |
0.322 |
|
| 1975 |
Doniach S, Lindau I, Spicer WE, Winick H. Synchrotron radiation as a new tool within photon‐beam technology Journal of Vacuum Science and Technology. 12: 1123-1127. DOI: 10.1116/1.568473 |
0.578 |
|
| 1975 |
Chye PW, Babalola IA, Sukegawa T, Spicer WE. Gallium antimonide surface states and Schottky-barrier pinning Physical Review Letters. 35: 1602-1604. DOI: 10.1103/Physrevlett.35.1602 |
0.413 |
|
| 1975 |
Pianetta P, Lindau I, Garner C, Spicer WE. Determination of the Oxygen Binding Site on GaAs(110) Using Soft-X-Ray-Photoemission Spectroscopy Physical Review Letters. 35: 1356-1359. DOI: 10.1103/Physrevlett.35.1356 |
0.647 |
|
| 1975 |
Gregory PE, Spicer WE. Photoemission studies of the GaAs-Cs interface Physical Review B. 12: 2370-2381. DOI: 10.1103/Physrevb.12.2370 |
0.332 |
|
| 1975 |
Johannessen JS, Spicer WE, Strausser YE. Phase separation in silicon oxides as seen by Auger electron spectroscopy Applied Physics Letters. 27: 452-454. DOI: 10.1063/1.88523 |
0.323 |
|
| 1975 |
Spicer WE, Gregory PE, Chye PW, Babalola IA, Sukegawa T. Photoemission study of the formation of Schottky barriers Applied Physics Letters. 27: 617-620. DOI: 10.1063/1.88309 |
0.402 |
|
| 1975 |
Gregory PE, Chye P, Sunami H, Spicer WE. The oxidation of Cs—uv photoemission studies Journal of Applied Physics. 46: 3525-3529. DOI: 10.1063/1.322080 |
0.334 |
|
| 1975 |
Lindau I, Pianetta P, Yu K, Spicer WE. The intrinsic linewidth of the 4f levels in gold as determined by photoemission Physics Letters A. 54: 47-48. DOI: 10.1016/0375-9601(75)90601-5 |
0.616 |
|
| 1975 |
Yu KY, McMenamin JC, Spicer WE. UPS measurements of molecular energy level of condensed gases Surface Science. 50: 149-156. DOI: 10.1016/0039-6028(75)90179-X |
0.329 |
|
| 1974 |
Helms CR, Spicer WE. Verification of the Metal-Rich Surface Model for the Oxidation of Sr, by Auger-Electron Spectroscopy Physical Review Letters. 32: 228-232. DOI: 10.1103/Physrevlett.32.228 |
0.369 |
|
| 1974 |
Lindau I, Spicer WE. Ultraviolet-photoemission studies of niobium Physical Review B. 10: 2262-2270. DOI: 10.1103/Physrevb.10.2262 |
0.649 |
|
| 1974 |
Gregory PE, Spicer WE, Ciraci S, Harrison WA. Surface state band on GaAs (110) face Applied Physics Letters. 25: 511-514. DOI: 10.1063/1.1655570 |
0.388 |
|
| 1974 |
Lindau I, Pianetta P, Doniach S, Spicer WE. X-ray photoemission spectroscopy Nature. 250: 214-215. DOI: 10.1038/250214A0 |
0.59 |
|
| 1974 |
Lindau I, Spicer WE. The probing depth in photoemission and auger-electron spectroscopy Journal of Electron Spectroscopy and Related Phenomena. 3: 409-413. DOI: 10.1016/0368-2048(74)80024-1 |
0.614 |
|
| 1973 |
Powell RA, Spicer WE, Fisher GB, Gregory P. Photoemission Studies of Cesium Telluride Physical Review B. 8: 3987-3995. DOI: 10.1103/Physrevb.8.3987 |
0.361 |
|
| 1972 |
Helms CR, Spicer WE. Photoemission Studies of the Oxidation of Strontium Physical Review Letters. 28: 565-569. DOI: 10.1103/Physrevlett.28.565 |
0.37 |
|
| 1972 |
Powell RA, Spicer WE, Mcmenamin JC. Photoemission studies of wurtzite zinc oxide. Physical Review B. 6: 3056-3065. DOI: 10.1103/Physrevb.6.3056 |
0.377 |
|
| 1972 |
Pierce DT, Spicer WE. Electronic Structure of Amorphous Si from Photoemission and Optical Studies Physical Review B. 5: 3017-3029. DOI: 10.1103/Physrevb.5.3017 |
0.311 |
|
| 1972 |
Pierce DT, Spicer WE. Photoemission Studies of Rhodium Physical Review B. 5: 2125-2130. DOI: 10.1103/Physrevb.5.2125 |
0.324 |
|
| 1972 |
Pierce DT, Ribbing CG, Spicer WE. Photoemission investigation of amorphous Si and Ge Journal of Non-Crystalline Solids. 959-964. DOI: 10.1016/0022-3093(72)90253-0 |
0.372 |
|
| 1972 |
Spicer WE, Donovan TM, Fischer JE. The case for sharp band edges in amorphous Ge and Si Journal of Non-Crystalline Solids. 122-127. DOI: 10.1016/0022-3093(72)90124-X |
0.361 |
|
| 1971 |
Endriz JG, Spicer WE. Experimental Evidence for the Surface Photoelectric Effect in Aluminum Physical Review Letters. 27: 570-573. DOI: 10.1103/Physrevlett.27.570 |
0.335 |
|
| 1971 |
Ribbing CG, Pierce DT, Spicer WE. Photoemission Investigation of Amorphous Germanium Physical Review B. 4: 4417-4424. DOI: 10.1103/Physrevb.4.4417 |
0.324 |
|
| 1971 |
Donovan TM, Fischer JE, Matsuzaki J, Spicer WE. Detailed Study of the Γ 15 Conduction-Band Minimum in Germanium by Photoemission and Transverse Electroreflectance Physical Review B. 3: 4292-4298. DOI: 10.1103/Physrevb.3.4292 |
0.346 |
|
| 1970 |
Pierce DT, Spicer WE. Photoemission Studies of Ferromagnetic and Paramagnetic Nickel Physical Review Letters. 25: 581-584. DOI: 10.1103/Physrevlett.25.581 |
0.338 |
|
| 1970 |
Endriz JG, Spicer WE. Reflectance Studies of Ba, Sr, Eu, and Yb Physical Review B. 2: 1466-1492. DOI: 10.1103/Physrevb.2.1466 |
0.351 |
|
| 1970 |
Krolikowski WF, Spicer WE. Photoemission studies of the noble metals. II - Gold Physical Review B. 1: 478-487. DOI: 10.1103/Physrevb.1.478 |
0.356 |
|
| 1969 |
Smith NV, Spicer WE. Photoemission Observation of Surface-Plasmon Excitation in the Alkali Metals Physical Review Letters. 23: 769-772. DOI: 10.1103/Physrevlett.23.769 |
0.359 |
|
| 1969 |
Smith NV, Spicer WE. A direct transition calculation of photoemission from the d bands in copper Optics Communications. 1: 157-160. DOI: 10.1016/0030-4018(69)90053-4 |
0.349 |
|
| 1968 |
Shay JL, Spicer WE. Photoemission Study of the Electronic Structure of Wurtzite CdSe and CdS Physical Review. 175: 1232-1232. DOI: 10.1103/Physrev.175.1232 |
0.367 |
|
| 1968 |
James LW, Eden RC, Moll JL, Spicer WE. Location of the L1 and X3 minima in GaAs as determined by photoemission studies Physical Review. 174: 909-910. DOI: 10.1103/Physrev.174.909 |
0.342 |
|
| 1968 |
Yu AYC, Spicer WE. Photoemission Studies of the Electronic Structure of Cobalt Physical Review. 167: 674-686. DOI: 10.1103/Physrev.167.674 |
0.347 |
|
| 1967 |
Herman F, Shay JL, Spicer WE. Photoemission Study of the Electronic Structure of CdTe Physical Review Letters. 18: 649-654. DOI: 10.1103/Physrevlett.18.649 |
0.323 |
|
| 1967 |
Eden RC, Moll JL, Spicer WE. Experimental evidence for optical population of the X minima in GaAs Physical Review Letters. 18: 597-599. DOI: 10.1103/Physrevlett.18.597 |
0.385 |
|
| 1967 |
Blodgett AJ, Spicer WE. Experimental Determination of the Optical Density of States in Iron Physical Review. 158: 514-523. DOI: 10.1103/Physrev.158.514 |
0.318 |
|
| 1965 |
Vilms J, Spicer WE. Quantum Efficiency and Radiative Lifetime in p‐Type Gallium Arsenide Journal of Applied Physics. 36: 2815-2821. DOI: 10.1063/1.1714587 |
0.318 |
|
| 1964 |
Wooten F, Spicer WE. Surface effects, band bending, and photoemission in semiconducting films of Cs3Sb Surface Science. 1: 367-377. DOI: 10.1016/0039-6028(64)90004-4 |
0.319 |
|
| 1964 |
Spicer WE, Kindig NB. Photoemissive investigation of the band structure of CdS Solid State Communications. 2: 13-16. DOI: 10.1016/0038-1098(64)90354-0 |
0.337 |
|
| 1963 |
Stuart RN, Wooten F, Spicer WE. Mean Free Path of Hot Electrons and Holes in Metals Physical Review Letters. 10: 119-119. DOI: 10.1103/Physrevlett.10.7 |
0.326 |
|
| 1960 |
Spicer WE. Photoemission and Related Properties of the Alkali‐Antimonides Journal of Applied Physics. 31: 2077-2084. DOI: 10.1063/1.1735505 |
0.361 |
|
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