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Jayhoon Chung, Ph.D. - Publications

Affiliations: 
2006 University of Texas at Austin, Austin, Texas, U.S.A. 
Area:
Materials Science Engineering
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14 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2012 Xie S, Chung J, Purcell B, Ko KS, Vartuli C, Lian G, Clark F. Electron Tomography of Stacked Contact/Via Structures Microscopy and Microanalysis. 18: 1798-1799. DOI: 10.1017/S1431927612010847  0.344
2011 Diercks D, Lian G, Chung J, Kaufman M. Comparison of convergent beam electron diffraction and geometric phase analysis for strain measurement in a strained silicon device Journal of Microscopy. 241: 195-199. PMID 21118218 DOI: 10.1111/J.1365-2818.2010.03423.X  0.549
2010 Choi YS, Lian G, Vartuli C, Olubuyide O, Chung J, Riley D, Baldwin G. Layout Variation Effects in Advanced MOSFETs: STI-Induced Embedded SiGe Strain Relaxation and Dual-Stress-Liner Boundary Proximity Effect Ieee Transactions On Electron Devices. 57: 2886-2891. DOI: 10.1109/Ted.2010.2066567  0.439
2010 Chung J, Lian G, Rabenberg L. Practical and Reproducible Mapping of Strains in Si Devices Using Geometric Phase Analysis of Annular Dark-Field Images From Scanning Transmission Electron Microscopy Ieee Electron Device Letters. 31: 854-856. DOI: 10.1109/Led.2010.2049562  0.568
2010 Diercks D, Lian G, Chung J, Kaufman M. Direct Comparison of Convergent Beam Electron Diffraction and Geometric Phase Analysis for Local Strain Measurement Microscopy and Microanalysis. 16: 742-743. DOI: 10.1017/S143192761005645X  0.499
2010 Chung J, Lian G, Rabenberg L. Local Lattice Strain Measurement using Geometric Phase Analysis of Annular Dark Field Images from Scanning Transmission Electron Microscopy Microscopy and Microanalysis. 16: 1476-1477. DOI: 10.1017/S1431927610056369  0.684
2010 Vartuli C, Lian G, Choi Y, Chung J. Strain Profiles in Si Channel of PMOS Devices Affected by Shallow-Trench Isolation Strain Relaxation In Embedded SiGe Microscopy and Microanalysis. 16: 1924-1925. DOI: 10.1017/S1431927610054577  0.446
2008 Chung J, Rabenberg L. Effects of strain gradients on strain measurements using geometrical phase analysis in the transmission electron microscope. Ultramicroscopy. 108: 1595-602. PMID 18635317 DOI: 10.1016/j.ultramic.2008.05.010  0.685
2008 Chung J, Lian G, Rabenberg L. Local strain measurement in a strain-engineered complementary metal-oxide-semiconductor device by geometrical phase analysis in the transmission electron microscope Applied Physics Letters. 93: 081909. DOI: 10.1063/1.2970050  0.682
2008 Lian G, Vartuli C, Chung J. Challenging analysis for the gate stack and strained channel of the advanced CMOS Microscopy and Microanalysis. 14: 384-385. DOI: 10.1017/S1431927608082421  0.39
2008 Chung J, Lian G, Vartuli C, Rajagopalan S, Rabenberg LK. Local Strain Measurement by Geometrical Phase Analysis in the Transmission Electron Microscope Applied to Strain-Engineered CMOS Devices Microscopy and Microanalysis. 14: 388-389. DOI: 10.1017/S1431927608082196  0.546
2007 Chung J, Rabenberg L. Measurement of incomplete strain relaxation in a silicon heteroepitaxial film by geometrical phase analysis in the transmission electron microscope Applied Physics Letters. 91: 231902. DOI: 10.1063/1.2821843  0.676
2006 Chung J, Rabenberg L. Two-dimensional imaging of the potential distribution within a core/shell nanowire by electron holography Journal of Materials Research. 21: 1215-1220. DOI: 10.1557/JMR.2006.0142  0.621
2006 Chung J, Rabenberg L. Mapping of electrostatic potentials within core-shell nanowires by electron holography Applied Physics Letters. 88: 013106. DOI: 10.1063/1.2159560  0.621
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