| Year |
Citation |
Score |
| 2021 |
Olorunsola O, Ojo S, Abernathy G, Zhou Y, Amoah S, Grant PC, Dou W, Margetis J, Tolle J, Kuchuk A, Du W, Li B, Zhang YH, Yu SF. Investigation of SiGeSn/GeSn/SiGeSn single quantum well with enhanced well emission. Nanotechnology. PMID 34763328 DOI: 10.1088/1361-6528/ac38e4 |
0.577 |
|
| 2020 |
Tsai C, Zhang Y, Ju Z, Zhang Y. Study of vertical hole transport in InAs/InAsSb type-II superlattices by steady-state and time-resolved photoluminescence spectroscopy Applied Physics Letters. 116: 201108. DOI: 10.1063/1.5144888 |
0.354 |
|
| 2020 |
Zhang F, Castaneda JF, Chen S, Wu W, DiNezza MJ, Lassise M, Nie W, Mohite A, Liu Y, Liu S, Friedman D, Liu H, Chen Q, Zhang YH, Huang J, Zhang Y, et al. Comparative studies of optoelectrical properties of prominent PV materials: Halide perovskite, CdTe, and GaAs Materials Today. 36: 18-29. DOI: 10.1016/J.Mattod.2020.01.001 |
0.353 |
|
| 2019 |
Kern K, Heitmann D, Grambow P, Zhang YH, Ploog K. Collective excitations in antidots. Physical Review Letters. 66: 1618-1621. PMID 10043256 DOI: 10.1103/Physrevlett.66.1618 |
0.314 |
|
| 2019 |
Campbell CM, Tsai C, Ding J, Zhang Y. Epitaxial Lift Off of II-VI Thin Films Using Water-Soluble MgTe Ieee Journal of Photovoltaics. 9: 1834-1838. DOI: 10.1109/Jphotov.2019.2928469 |
0.329 |
|
| 2019 |
Niaz IA, Miah MAR, Yan L, Yu Y, He Z, Zhang Y, Zhang AC, Zhou J, Zhang Y, Lo Y. Modeling Gain Mechanisms in Amorphous Silicon Due to Efficient Carrier Multiplication and Trap-Induced Junction Modulation Journal of Lightwave Technology. 37: 5056-5066. DOI: 10.1109/Jlt.2019.2927622 |
0.326 |
|
| 2019 |
Tran H, Pham T, Margetis J, Zhou Y, Dou W, Grant PC, Grant JM, Al-Kabi S, Sun G, Soref RA, Tolle J, Zhang Y, Du W, Li B, Mortazavi M, et al. Si-Based GeSn Photodetectors toward Mid-Infrared Imaging Applications Acs Photonics. 6: 2807-2815. DOI: 10.1021/Acsphotonics.9B00845 |
0.542 |
|
| 2019 |
He Z, Campbell CM, Lassise MB, Lin Z, Becker JJ, Zhang Y. Monolithically integrated CdTe/InSb visible/midwave-infrared two-color photodetectors Infrared Physics & Technology. 97: 58-62. DOI: 10.1016/J.Infrared.2018.11.031 |
0.336 |
|
| 2018 |
Wang X, Campbell C, Zhang Y, Nemanich RJ. Band alignment at the CdTe/InSb (001) heterointerface Journal of Vacuum Science and Technology. 36: 31101. DOI: 10.1116/1.5022799 |
0.379 |
|
| 2018 |
Lassise MB, Wang P, Tracy BD, Chen G, Smith DJ, Zhang Y. Growth of II-VI/III-V heterovalent quantum structures Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 36. DOI: 10.1116/1.5017972 |
0.432 |
|
| 2018 |
Becker JJ, Campbell CM, Tsai C, Zhao Y, Lassise M, Zhao X, Boccard M, Holman ZC, Zhang Y. Monocrystalline 1.7-eV-Bandgap MgCdTe Solar Cell With 11.2% Efficiency Ieee Journal of Photovoltaics. 8: 581-586. DOI: 10.1109/Jphotov.2017.2769105 |
0.387 |
|
| 2018 |
Swanson DE, Reich C, Abbas A, Shimpi T, Liu H, Ponce FA, Walls JM, Zhang Y, Metzger WK, Sampath WS, Holman ZC. CdCl2 passivation of polycrystalline CdMgTe and CdZnTe absorbers for tandem photovoltaic cells Journal of Applied Physics. 123: 203101. DOI: 10.1063/1.5023811 |
0.375 |
|
| 2018 |
Liao M, Campbell C, Tsai CY, Zhang Y, Goorsky M. Strain Analysis of CdTe on InSb Epitaxial Structures Using X-ray-Based Reciprocal Space Measurements and Dynamical Diffraction Simulations Journal of Electronic Materials. 47: 5666-5670. DOI: 10.1007/S11664-018-6566-1 |
0.366 |
|
| 2017 |
Becker JJ, Boccard M, Campbell CM, Zhao Y, Lassise M, Holman ZC, Zhang Y. Loss Analysis of Monocrystalline CdTe Solar Cells With 20% Active-Area Efficiency Ieee Journal of Photovoltaics. 7: 900-905. DOI: 10.1109/Jphotov.2017.2685438 |
0.306 |
|
| 2017 |
Zhao X, Liu S, Campbell CM, Yuan Z, Lassise MB, Zhang Y. Ultralow Interface Recombination Velocity (∼1 cm/s) at CdTe/MgxCd ${}_{1\hbox{-}}$xTe Heterointerface Ieee Journal of Photovoltaics. 7: 913-918. DOI: 10.1109/Jphotov.2017.2666553 |
0.365 |
|
| 2017 |
Becker JJ, Campbell CM, Zhao Y, Boccard M, Mohanty D, Lassise M, Suarez E, Bhat I, Holman ZC, Zhang Y. Monocrystalline CdTe/MgCdTe Double-Heterostructure Solar Cells With ZnTe Hole Contacts Ieee Journal of Photovoltaics. 7: 307-312. DOI: 10.1109/Jphotov.2016.2626139 |
0.368 |
|
| 2017 |
Liu H, Zhang Y, Steenbergen EH, Liu S, Lin Z, Zhang Y, Kim J, Ji MH, Detchprohm T, Dupuis RD, Kim JK, Hawkins SD, Klem JF. Raman Scattering Study of Lattice Vibrations in the Type-II Superlattice InAs/InAs1-xSbx Physical Review Applied. 8: 34028. DOI: 10.1103/Physrevapplied.8.034028 |
0.302 |
|
| 2017 |
Tracy BD, Smith DJ, Lassise M, Zhang Y. Heterovalent ZnTe/GaSb and ZnSe/GaAs Grown by Molecular Beam Epitaxy Microscopy and Microanalysis. 23: 1472-1473. DOI: 10.1017/S1431927617008029 |
0.335 |
|
| 2016 |
Zhao XH, Liu S, Zhao Y, Campbell CM, Lassise MB, Kuo YS, Zhang YH. Electrical and Optical Properties of n-Type Indium-Doped CdTe/Mg 0.46Cd 0.54Te Double Heterostructures Ieee Journal of Photovoltaics. DOI: 10.1109/Jphotov.2016.2514742 |
0.369 |
|
| 2016 |
He ZY, Campbell CM, Lassise MB, Lin ZY, Becker JJ, Zhao Y, Boccard M, Holman Z, Zhang YH. CdTe nBn photodetectors with ZnTe barrier layer grown on InSb substrates Applied Physics Letters. 109. DOI: 10.1063/1.4963135 |
0.402 |
|
| 2016 |
Lu J, Luna E, Aoki T, Steenbergen EH, Zhang YH, Smith DJ. Evaluation of antimony segregation in InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy Journal of Applied Physics. 119. DOI: 10.1063/1.4942844 |
0.374 |
|
| 2016 |
Steenbergen EH, Massengale JA, Ariyawansa G, Zhang Y. Evidence of carrier localization in photoluminescence spectroscopy studies of mid-wavelength infrared InAs/InAs1−xSbx type-II superlattices Journal of Luminescence. 178: 451-456. DOI: 10.1016/J.Jlumin.2016.06.020 |
0.361 |
|
| 2016 |
Lu J, DiNezza MJ, Zhao XH, Liu S, Zhang YH, Kovacs A, Dunin-Borkowski RE, Smith DJ. Towards defect-free epitaxial CdTe and MgCdTe layers grown on InSb (001) substrates Journal of Crystal Growth. 439: 99-103. DOI: 10.1016/J.Jcrysgro.2016.01.015 |
0.409 |
|
| 2015 |
Gan Z, DiNezza M, Zhang YH, Smith DJ, McCartney MR. Determination of Mean Inner Potential and Inelastic Mean Free Path of ZnTe Using Off-Axis Electron Holography and Dynamical Effects Affecting Phase Determination. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 1-7. PMID 26611637 DOI: 10.1017/S1431927615015378 |
0.303 |
|
| 2015 |
Steenbergen EH, Lin ZY, Elhamri S, Mitchel WC, Zhang Y, Kaspi R. Effects of AlSb interfaces on InAs/InAsSb type-II infrared superlattice material properties Proceedings of Spie. 9451: 945114. DOI: 10.1117/12.2177696 |
0.428 |
|
| 2015 |
Lin ZY, Fan J, Liu S, Zhang Y. Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices Proceedings of Spie. 9451. DOI: 10.1117/12.2177526 |
0.388 |
|
| 2015 |
Liu S, Zhao X, Campbell CM, DiNezza MJ, Zhao Y, Zhang Y. Minority carrier lifetime of lattice-matched CdZnTe alloy grown on InSb substrates using molecular beam epitaxy Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 33: 11207. DOI: 10.1116/1.4905289 |
0.426 |
|
| 2015 |
Liu S, Yang W, Becker J, Kuo YS, Zhang YH. Non-Lambertian Reflective Back Scattering and Its Impact on Device Performance of Ultrathin GaAs Single-Junction Solar Cells Ieee Journal of Photovoltaics. 5: 832-839. DOI: 10.1109/Jphotov.2015.2400332 |
0.357 |
|
| 2015 |
Webster PT, Riordan NA, Liu S, Steenbergen EH, Synowicki RA, Zhang YH, Johnson SR. Measurement of InAsSb bandgap energy and InAs/InAsSb band edge positions using spectroscopic ellipsometry and photoluminescence spectroscopy Journal of Applied Physics. 118. DOI: 10.1063/1.4939293 |
0.401 |
|
| 2015 |
Lin ZY, Liu S, Steenbergen EH, Zhang YH. Influence of carrier localization on minority carrier lifetime in InAs/InAsSb type-II superlattices Applied Physics Letters. 107. DOI: 10.1063/1.4936109 |
0.379 |
|
| 2015 |
Shen XM, He ZY, Liu S, Lin ZY, Zhang YH, Smith DJ, McCartney MR. An indirect method of studying band alignments in nBn photodetectors using off-axis electron holography Applied Physics Letters. 107. DOI: 10.1063/1.4931938 |
0.367 |
|
| 2015 |
Liu S, Zhao XH, Campbell CM, Lassise MB, Zhao Y, Zhang YH. Carrier lifetimes and interface recombination velocities in CdTe/MgxCd1-xTe double heterostructures with different Mg compositions grown by molecular beam epitaxy Applied Physics Letters. 107. DOI: 10.1063/1.4927757 |
0.364 |
|
| 2015 |
Prins AD, Lewis MK, Bushell ZL, Sweeney SJ, Liu S, Zhang YH. Evidence for a defect level above the conduction band edge of InAs/InAsSb type-II superlattices for applications in efficient infrared photodetectors Applied Physics Letters. 106. DOI: 10.1063/1.4919549 |
0.33 |
|
| 2015 |
Webster PT, Riordan NA, Liu S, Steenbergen EH, Synowicki RA, Zhang YH, Johnson SR. Absorption properties of type-II InAs/InAsSb superlattices measured by spectroscopic ellipsometry Applied Physics Letters. 106. DOI: 10.1063/1.4908255 |
0.393 |
|
| 2015 |
Seyedmohammadi S, DiNezza MJ, Liu S, King P, LeBlanc EG, Zhao XH, Campbell C, Myers TH, Zhang YH, Malik RJ. Molecular beam epitaxial re-growth of CdTe, CdTe/CdMgTe and CdTe/CdZnTe double heterostructures on CdTe/InSb(100) substrates with As cap Journal of Crystal Growth. DOI: 10.1016/J.Jcrysgro.2015.02.055 |
0.399 |
|
| 2015 |
Lu J, Webster PT, Liu S, Zhang YH, Johnson SR, Smith DJ. Investigation of MBE-grown InAs1-xBix alloys and Bi-mediated type-II superlattices by transmission electron microscopy Journal of Crystal Growth. 425: 250-254. DOI: 10.1016/J.Jcrysgro.2015.02.012 |
0.357 |
|
| 2014 |
Alberi K, Fluegel B, DiNezza MJ, Liu S, Zhang Y, Mascarenhas A. Probing carrier lifetimes at dislocations in epitaxial CdTe Applied Physics Express. 7: 065503. DOI: 10.7567/Apex.7.065503 |
0.344 |
|
| 2014 |
Zhao XH, Dinezza MJ, Liu S, Lin S, Zhao Y, Zhang Y. Time-resolved and excitation-dependent photoluminescence study of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy Journal of Vacuum Science & Technology B. 32: 40601. DOI: 10.1116/1.4878317 |
0.407 |
|
| 2014 |
Webster PT, Riordan NA, Gogineni C, Liu S, Lu J, Zhao XH, Smith DJ, Zhang YH, Johnson SR. Molecular beam epitaxy using bismuth as a constituent in InAs and a surfactant in InAs/InAsSb superlattices Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 32. DOI: 10.1116/1.4868111 |
0.441 |
|
| 2014 |
Zhao XH, Dinezza MJ, Liu S, Campbell CM, Zhao Y, Zhang Y. Determination of CdTe bulk carrier lifetime and interface recombination velocity of CdTe/MgCdTe double heterostructures grown by molecular beam epitaxy Applied Physics Letters. 105: 252101. DOI: 10.1063/1.4904993 |
0.413 |
|
| 2014 |
Yang W, Becker J, Liu S, Kuo YS, Li JJ, Landini B, Campman K, Zhang Y. Ultra-thin GaAs single-junction solar cells integrated with a reflective back scattering layer Journal of Applied Physics. 115: 203105. DOI: 10.1063/1.4878156 |
0.357 |
|
| 2013 |
Steenbergen EH, Massengale JA, Cowan VM, Lin Z, Zhang Y, Morath CP. Proton radiation effects on the photoluminescence of infrared InAs/InAsSb superlattices Proceedings of Spie. 8876: 887609. DOI: 10.1117/12.2026872 |
0.304 |
|
| 2013 |
Cellek OO, He Z, Lin Z, Kim HS, Liu S, Zhang Y. InAs/InAsSb type-II superlattice infrared nBn photodetectors and their potential for operation at high temperatures Proceedings of Spie. 8631. DOI: 10.1117/12.2007612 |
0.361 |
|
| 2013 |
Fan J, Liu X, Ouyang L, Pimpinella RE, Dobrowolska M, Furdyna JK, Smith DJ, Zhang YH. Molecular beam epitaxial growth of high-reflectivity and broad-bandwidth ZnTe/GaSb distributed Bragg reflectors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 31. DOI: 10.1116/1.4793475 |
0.41 |
|
| 2013 |
DiNezza MJ, Zhao XH, Liu S, Kirk AP, Zhang Y. Growth, steady-state, and time-resolved photoluminescence study of CdTe/MgCdTe double heterostructures on InSb substrates using molecular beam epitaxy Applied Physics Letters. 103: 193901. DOI: 10.1063/1.4828984 |
0.43 |
|
| 2013 |
Mahalingam K, Steenbergen EH, Brown GJ, Zhang YH. Quantitative analysis of strain distribution in InAs/InAs 1-xSbx superlattices Applied Physics Letters. 103. DOI: 10.1063/1.4817969 |
0.332 |
|
| 2013 |
Liu S, Li H, Cellek OO, Ding D, Shen X, Lin Z, Steenbergen EH, Fan J, He Z, Lu J, Johnson SR, Smith DJ, Zhang Y. Impact of substrate temperature on the structural and optical properties of strain-balanced InAs/InAsSb type-II superlattices grown by molecular beam epitaxy Applied Physics Letters. 102: 071903. DOI: 10.1063/1.4793231 |
0.423 |
|
| 2013 |
Hossain N, Hild K, Jin SR, Yu SQ, Johnson SR, Ding D, Zhang YH, Sweeney SJ. The influence of growth conditions on carrier recombination mechanisms in 1.3 μm GaAsSb/GaAs quantum well lasers Applied Physics Letters. 102. DOI: 10.1063/1.4789859 |
0.383 |
|
| 2013 |
Shen X, Li H, Liu S, Smith DJ, Zhang Y. Study of InAs/InAsSb type-II superlattices using high-resolution x-ray diffraction and cross-sectional electron microscopy Journal of Crystal Growth. 381: 1-5. DOI: 10.1016/J.Jcrysgro.2013.06.021 |
0.37 |
|
| 2013 |
Fan J, Ouyang L, Liu X, Furdyna JK, Smith DJ, Zhang YH. GaSb/ZnTe double-heterostructures grown using molecular beam epitaxy Journal of Crystal Growth. 371: 122-125. DOI: 10.1016/J.Jcrysgro.2013.02.023 |
0.43 |
|
| 2013 |
Li H, Liu S, Cellek OO, Ding D, Shen X, Steenbergen EH, Fan J, Lin Z, He Z, Zhang Q, Webster PT, Johnson SR, Ouyang L, Smith DJ, Zhang Y. A calibration method for group V fluxes and impact of V/III flux ratio on the growth of InAs/InAsSb type-II superlattices by molecular beam epitaxy Journal of Crystal Growth. 378: 145-149. DOI: 10.1016/J.Jcrysgro.2012.12.144 |
0.405 |
|
| 2013 |
Lim SH, Li JJ, Steenbergen EH, Zhang Y. Luminescence coupling effects on multijunction solar cell external quantum efficiency measurement Progress in Photovoltaics. 21: 344-350. DOI: 10.1002/Pip.1215 |
0.327 |
|
| 2012 |
Steenbergen EH, Connelly BC, Metcalfe GD, Shen H, Wraback M, Lubyshev D, Qiu Y, Fastenau JM, Liu AWK, Elhamri S, Cellek OO, Zhang YH. Temperature-dependent minority carrier lifetimes of InAs/InAs 1-xSbx type-II superlattices Proceedings of Spie - the International Society For Optical Engineering. 8512. DOI: 10.1117/12.930949 |
0.367 |
|
| 2012 |
Cellek OO, Li H, Shen X, Lin Z, Steenbergen EH, Ding D, Liu S, Zhang Q, Kim HS, Fan J, DiNezza MJ, Dettlaff WHG, Webster PT, He Z, Li J, ... ... Zhang Y, et al. InAs/InAsSb Type-II superlattice: a promising material for mid-wavelength and long-wavelength infrared applications Proceedings of Spie. 8353. DOI: 10.1117/12.925076 |
0.387 |
|
| 2012 |
Cellek OO, Kim HS, Reno JL, Zhang Y. NIR/LWIR dual-band infrared photodetector with optical addressing Proceedings of Spie. 8353. DOI: 10.1117/12.920862 |
0.329 |
|
| 2012 |
Li JJ, Lim SH, Zhang Y. A novel method to eliminate the measurement artifacts of external quantum efficiency of multi-junction solar cells caused by the shunt effect Proceedings of Spie. 8256: 825616. DOI: 10.1117/12.912790 |
0.303 |
|
| 2012 |
Ouyang L, Steenbergen EH, Cellek OO, Zhang Y, Smith DJ. Structural properties of InAs/InAs 1-x Sb x type-II superlattices Proceedings of Spie. 8268: 826830. DOI: 10.1117/12.912276 |
0.425 |
|
| 2012 |
Liu S, Ding D, Johnson SR, Zhang Y. Optimal optical designs for planar GaAs single-junction solar cells with textured and reflective surfaces Proceedings of Spie. 8256. DOI: 10.1117/12.909841 |
0.336 |
|
| 2012 |
Cellek OO, Zhang Y. Optically addressed multiband photodetector for infrared imaging applications Proceedings of Spie. 8268. DOI: 10.1117/12.909063 |
0.312 |
|
| 2012 |
Steenbergen EH, Cellek OO, Lubyshev D, Qiu Y, Fastenau JM, Liu AWK, Zhang Y. Study of the valence band offsets between InAs and InAs 1-x Sb x alloys Proceedings of Spie. 8268. DOI: 10.1117/12.907101 |
0.323 |
|
| 2012 |
Fan J, Ouyang L, Liu X, Ding D, Furdyna JK, Smith DJ, Zhang YH. Influence of temperature ramp on the materials properties of GaSb grown on ZnTe using molecular beam epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3681280 |
0.421 |
|
| 2012 |
Steenbergen EH, Nunna K, Ouyang L, Ullrich B, Huffaker DL, Smith DJ, Zhang YH. Strain-balanced InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy on GaSb substrates Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3672028 |
0.371 |
|
| 2012 |
Ouyang L, Steenbergen EH, Zhang YH, Nunna K, Huffaker DL, Smith DJ. Structural properties of InAs/InAs1-xSbx type-II superlattices grown by molecular beam epitaxy Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3672026 |
0.419 |
|
| 2012 |
Liu X, Smith DJ, Cao H, Chen YP, Fan J, Zhang YH, Pimpinella RE, Dobrowolska M, Furdyna JK. Characterization of Bi2Te3 and Bi2Se 3 topological insulators grown by MBE on (001) GaAs substrates Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 30. DOI: 10.1116/1.3668082 |
0.362 |
|
| 2012 |
Kim HS, Cellek OO, Lin ZY, He ZY, Zhao XH, Liu S, Li H, Zhang Y. Long-wave infrared nBn photodetectors based on InAs/InAsSb type-II superlattices Applied Physics Letters. 101: 161114. DOI: 10.1063/1.4760260 |
0.331 |
|
| 2012 |
Fan J, Liu X, Furdyna JK, Zhang YH. ZnTe/GaSb distributed Bragg reflectors grown on GaSb for mid-wave infrared optoelectronic applications Applied Physics Letters. 101. DOI: 10.1063/1.4753819 |
0.378 |
|
| 2012 |
Li JJ, Yin L, Johnson SR, Skromme BJ, Wang S, Liu X, Ding D, Ning CZ, Furdyna JK, Zhang YH. Photoluminescence studies of type-II CdSe/CdTe superlattices Applied Physics Letters. 101. DOI: 10.1063/1.4745199 |
0.397 |
|
| 2012 |
Blume G, Hild K, Marko IP, Hosea TJC, Yu SQ, Chaparro SA, Samal N, Johnson S, Zhang Y, Sweeney SJ. Cavity mode gain alignment in GaAsSb-based near-infrared vertical cavity lasers studied by spectroscopy and device measurements Journal of Applied Physics. 112: 33108. DOI: 10.1063/1.4744985 |
0.411 |
|
| 2012 |
Cellek OO, Reno JL, Zhang Y. Optically addressed near and long-wave infrared multiband photodetectors Applied Physics Letters. 100: 241103. DOI: 10.1063/1.4729004 |
0.396 |
|
| 2012 |
Li JJ, Liu X, Liu S, Wang S, Smith DJ, Ding D, Johnson SR, Furdyna JK, Zhang YH. CdSe/CdTe type-II superlattices grown on GaSb (001) substrates by molecular beam epitaxy Applied Physics Letters. 100. DOI: 10.1063/1.3697676 |
0.436 |
|
| 2012 |
Dinezza MJ, Zhang Q, Ding D, Fan J, Liu X, Furdyna JK, Zhang YH. Aluminum diffusion in ZnTe films grown on GaSb substrates for n-type doping Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 1720-1723. DOI: 10.1002/Pssc.201100769 |
0.373 |
|
| 2012 |
Zhang Q, Liu X, Dinezza MJ, Fan J, Ding D, Furdyna JK, Zhang YH. Influence of Te/Zn flux ratio on aluminium doped ZnTe grown by MBE on GaSb substrates Physica Status Solidi (C) Current Topics in Solid State Physics. 9: 1724-1727. DOI: 10.1002/Pssc.201100764 |
0.372 |
|
| 2011 |
Wu S-, Yu S-, Ding D, Johnson SR, Zhang Y. Ultrahigh luminescence extraction via the monolithic integration of a light emitting active region with a semiconductor hemisphere Journal of Vacuum Science & Technology. B. Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29: 31213. DOI: 10.1116/1.3592190 |
0.311 |
|
| 2011 |
Steenbergen EH, Connelly BC, Metcalfe GD, Shen H, Wraback M, Lubyshev D, Qiu Y, Fastenau JM, Liu AWK, Elhamri S, Cellek OO, Zhang YH. Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb Applied Physics Letters. 99. DOI: 10.1063/1.3671398 |
0.384 |
|
| 2011 |
Ding D, Johnson SR, Yu S-, Wu S-, Zhang Y. A semi-analytical model for semiconductor solar cells Journal of Applied Physics. 110: 123104. DOI: 10.1063/1.3671061 |
0.335 |
|
| 2011 |
Liu X, Smith DJ, Fan J, Zhang YH, Cao H, Chen YP, Leiner J, Kirby BJ, Dobrowolska M, Furdyna JK. Structural properties of Bi2Te3 and Bi 2Se3 topological insulators grown by molecular beam epitaxy on GaAs(001) substrates Applied Physics Letters. 99. DOI: 10.1063/1.3655995 |
0.391 |
|
| 2011 |
Hild K, Marko IP, Johnson SR, Yu SQ, Zhang YH, Sweeney SJ. Influence of de-tuning and non-radiative recombination on the temperature dependence of 1.3 m GaAsSb/GaAs vertical cavity surface emitting lasers Applied Physics Letters. 99. DOI: 10.1063/1.3625938 |
0.351 |
|
| 2011 |
Steenbergen EH, Huang Y, Ryou JH, Ouyang L, Li JJ, Smith DJ, Dupuis RD, Zhang YH. Structural and optical characterization of type-II InAs/InAs 1-xSbx superlattices grown by metalorganic chemical vapor deposition Applied Physics Letters. 99. DOI: 10.1063/1.3625429 |
0.418 |
|
| 2011 |
Fan J, Ouyang L, Liu X, Ding D, Furdyna JK, Smith DJ, Zhang YH. Growth and material properties of ZnTe on GaAs, InP, InAs and GaSb (0 0 1) substrates for electronic and optoelectronic device applications Journal of Crystal Growth. 323: 127-131. DOI: 10.1016/J.Jcrysgro.2010.11.164 |
0.424 |
|
| 2011 |
Huang Y, Ryou JH, Dupuis RD, D'costa VR, Steenbergen EH, Fan J, Zhang YH, Petschke A, Mandl M, Chuang SL. Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength infrared photodetectors Journal of Crystal Growth. 314: 92-96. DOI: 10.1016/J.Jcrysgro.2010.11.003 |
0.348 |
|
| 2011 |
Scott RC, Leedy KD, Bayraktaroglu B, Look DC, Smith DJ, Ding D, Lu X, Zhang YH. Influence of substrate temperature and post-deposition annealing on material properties of Ga-doped ZnO prepared by pulsed laser deposition Journal of Electronic Materials. 40: 419-428. DOI: 10.1007/S11664-010-1396-9 |
0.336 |
|
| 2010 |
Chung S, Johnson SR, Ding D, Zhang Y, Smith DJ, McCartney MR. Quantitative dopant profiling of p-n junction in InGaAs∕AlGaAs light-emitting diode using off-axis electron holography Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 28: C1D11-C1D14. DOI: 10.1116/1.3244575 |
0.36 |
|
| 2010 |
Hossain N, Hild K, Jin S, Sweeney SJ, Yu SQ, Johnson SR, Ding D, Zhang YH. Role of growth temperature on the physical characteristics of GaAsSb/GaAs QW lasers 2010 23rd Annual Meeting of the Ieee Photonics Society, Photinics 2010. 59-60. DOI: 10.1109/Photonics.2010.5698756 |
0.602 |
|
| 2010 |
Scott RC, Leedy KD, Bayraktaroglu B, Look DC, Zhang YH. Highly conductive ZnO grown by pulsed laser deposition in pure Ar Applied Physics Letters. 97. DOI: 10.1063/1.3481372 |
0.342 |
|
| 2009 |
Chung S, Johnson SR, Ding D, Zhang Y, Smith DJ, McCartney MR. Quantitative Analysis of Dopant Distribution and Activation Across p-n Junctions in AlGaAs/GaAs Light-Emitting Diodes Using Off-Axis Electron Holography Ieee Transactions On Electron Devices. 56: 1919-1923. DOI: 10.1109/Ted.2009.2025914 |
0.375 |
|
| 2009 |
Chung S, Johnson SR, Zhang Y, Smith DJ, McCartney MR. Off-axis electron holographic potential mapping across AlGaAs/AlAs/GaAs heterostructures Journal of Applied Physics. 105: 014910. DOI: 10.1063/1.3062449 |
0.368 |
|
| 2009 |
Wang S, Ding D, Liu X, Zhang XB, Smith DJ, Furdyna JK, Zhang YH. MBE growth of II-VI materials on GaSb substrates for photovoltaic applications Journal of Crystal Growth. 311: 2116-2119. DOI: 10.1016/J.Jcrysgro.2008.09.189 |
0.422 |
|
| 2009 |
Zhang X, Wang S, Ding D, Liu X, Tan JH, Furdyna JK, Zhang YH, Smith DJ. Structural characterization of integrated II-VI and III-V heterostructures for solar cell applications Journal of Electronic Materials. 38: 1558-1562. DOI: 10.1007/S11664-009-0746-Y |
0.388 |
|
| 2009 |
Horst S, Chatterjee S, Hantke K, Klar PJ, Nemeth I, Stolz W, Volz K, Bückers C, Thränhardt A, Koch SW, Rühle W, Johnson S, Wang JB, Zhang Y. Ga(AsSb)/GaAs/(AlGa)As heterostructures: additional hole‐confinement due to quantum islands Physica Status Solidi (C). 6: 411-414. DOI: 10.1002/Pssc.200880338 |
0.402 |
|
| 2008 |
Tawara T, Kamada H, Zhang Y, Tanabe T, Cade NI, Ding D, Johnson S, Gotoh H, Kuramochi E, Notomi M, Sogawa T. Quality factor control and lasing characteristics of InAs/InGaAs quantum dots embedded in photonic-crystal nanocavities. Optics Express. 16: 5199-5205. PMID 18542622 DOI: 10.1364/Oe.16.005199 |
0.364 |
|
| 2008 |
Horst S, Chatterjee S, Hantke K, Klar PJ, Nemeth I, Stolz W, Volz K, Bückers C, Thränhardt A, Koch SW, Rühle W, Johnson S, Wang JB, Zhang Y. Hole confinement in quantum islands in Ga(AsSb)/GaAs/(AlGa)As heterostructures Applied Physics Letters. 92: 161101. DOI: 10.1063/1.2913767 |
0.423 |
|
| 2008 |
Liu JP, Ryou JH, Yoo D, Zhang Y, Limb J, Horne CA, Shen SC, Dupuis RD, Hanser AD, Preble EA, Evans KR. III-nitride heterostructure field-effect transistors grown on semi-insulating GaN substrate without regrowth interface charge Applied Physics Letters. 92. DOI: 10.1063/1.2906372 |
0.344 |
|
| 2007 |
Kadushkin VI, Sadof'ev YG, Bird JP, Johnson SR, Zhang YH. Resonance modulation of the intersubband electron-electron interaction in an AlSb(δ-Te)/InAs/AsSb(δ-Te) quantum well by magnetic field Semiconductors. 41: 327-334. DOI: 10.1134/S1063782607030165 |
0.328 |
|
| 2007 |
Heeg B, Wang JB, Johnson SR, Buckner BD, Zhang YH. Thermally assisted electroluminescence: A viable means to generate electricity from solar or waste heat? Proceedings of Spie - the International Society For Optical Engineering. 6461. DOI: 10.1117/12.708233 |
0.343 |
|
| 2007 |
Yu SQ, Ding D, Wang JB, Samal N, Jin X, Cao Y, Johnson S, Zhang Y. High performance GaAsSb∕GaAs quantum well lasers Journal of Vacuum Science & Technology B. 25: 1658-1663. DOI: 10.1116/1.2781531 |
0.404 |
|
| 2007 |
Johnson SR, Ding D, Wang J-, Yu S-, Zhang Y. Excitation dependent photoluminescence measurements of the nonradiative lifetime and quantum efficiency in GaAs Journal of Vacuum Science & Technology B. 25: 1077-1082. DOI: 10.1116/1.2720864 |
0.416 |
|
| 2007 |
Bückers C, Blume G, Thränhardt A, Schlichenmaier C, Klar PJ, Weiser G, Koch SW, Hader J, Moloney JV, Hosea TJC, Sweeney SJ, Wang JB, Johnson S, Zhang Y. Microscopic electroabsorption line shape analysis for Ga(AsSb)∕GaAs heterostructures Journal of Applied Physics. 101: 33118. DOI: 10.1063/1.2433715 |
0.351 |
|
| 2007 |
Wang Y, Djie HS, Ooi BS, Rotella P, Dowd P, Aimez V, Cao Y, Zhang Y. Interdiffusion effect on quantum-well structures grown on GaSb substrate Thin Solid Films. 515: 4352-4355. DOI: 10.1016/J.Tsf.2006.07.099 |
0.387 |
|
| 2007 |
Yu S, Wang J, Ding D, Johnson S, Vasileska D, Zhang Y. Impact of electronic density of states on electroluminescence refrigeration Solid-State Electronics. 51: 1387-1390. DOI: 10.1016/J.Sse.2007.06.015 |
0.339 |
|
| 2007 |
Borkovska L, Korsunska N, Kladko V, Kryshtab T, Kushnirenko V, Slobodyan M, Yefanov O, Venger Y, Johnson S, Sadofyev Y, Zhang Y. Investigation of defect structure of InGaNAsSb/GaAs quantum wells Materials Science and Engineering: C. 27: 1038-1042. DOI: 10.1016/J.Msec.2006.06.005 |
0.421 |
|
| 2007 |
Wang JB, Zhang Y. Increased power conversion efficiency through photon recycling in quantum well lasers Physica Status Solidi (C). 4: 1601-1604. DOI: 10.1002/Pssc.200674287 |
0.374 |
|
| 2007 |
Wang JB, Ding D, Johnson S, Yu SQ, Zhang Y. Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by molecular beam epitaxy Physica Status Solidi B-Basic Solid State Physics. 244: 2740-2751. DOI: 10.1002/Pssb.200675612 |
0.422 |
|
| 2007 |
Hild K, Sweeney SJ, Marko IP, Jin SR, Johnson SR, Chaparro SA, Yu S, Zhang YH. Temperature and pressure dependence of carrier recombination processes in GaAsSb/GaAs quantum well lasers Physica Status Solidi (B) Basic Research. 244: 197-202. DOI: 10.1002/Pssb.200672571 |
0.596 |
|
| 2006 |
Yu SQ, Jin X, Johnson S, Zhang Y. Gain saturation and carrier distribution effects in molecular beam epitaxy grown GaAsSb∕GaAs quantum well lasers Journal of Vacuum Science & Technology B. 24: 1617-1621. DOI: 10.1116/1.2192534 |
0.416 |
|
| 2006 |
Hild K, Sweeney SJ, Wright S, Lock DA, Jin SR, Marko IP, Johnson S, Chaparro SA, Yu SQ, Zhang Y. Carrier recombination in 1.3 mu m GaAsSb/GaAs quantum well lasers Applied Physics Letters. 89: 173509. DOI: 10.1063/1.2369649 |
0.397 |
|
| 2006 |
Kabir NA, Yoon Y, Knab JR, Chen JY, Markelz AG, Reno JL, Sadofyev Y, Johnson S, Zhang YH, Bird JP. Terahertz transmission characteristics of high-mobility GaAs and InAs two-dimensional-electron-gas systems Applied Physics Letters. 89. DOI: 10.1063/1.2357605 |
0.322 |
|
| 2006 |
Wang JB, Johnson S, Ding D, Yu SQ, Zhang Y. Influence of photon recycling on semiconductor luminescence refrigeration Journal of Applied Physics. 100: 43502. DOI: 10.1063/1.2219323 |
0.338 |
|
| 2006 |
Borkovska L, Yefanov O, Gudymenko O, Johnson S, Kladko V, Korsunska N, Kryshtab T, Sadofyev Y, Zhang Y. Effect of growth temperature on the luminescent and structural properties of InGaAsSbN/GaAs quantum wells for 1.3 μm telecom application Thin Solid Films. 515: 786-789. DOI: 10.1016/J.Tsf.2005.12.194 |
0.444 |
|
| 2005 |
Sadofyev YG, Ramamoorthy A, Bird JP, Johnson SR, Zhang YH. Unusual persistent photoconductivity in the InAs/AlSb quantum well Fizika I Tekhnika Poluprovodnikov. 39: 106-111. DOI: 10.1134/1.1852654 |
0.373 |
|
| 2005 |
Aleshkin VY, Gavrilenko VI, Ikonnikov AV, Sadofyev YG, Bird JP, Johnson S, Zhang Y. Cyclotron resonance in doped and undoped InAs/AlSb heterostructures with quantum wells Semiconductors. 39: 62-66. DOI: 10.1134/1.1852647 |
0.37 |
|
| 2005 |
Aleshkin VY, Gavrilenko VI, Gaponova DM, Ikonnikov AV, Marem'yanin KV, Morozov SV, Sadofyev YG, Johnson S, Zhang Y. Spectra of persistent photoconductivity in InAs/AlSb quantum-well heterostructures Semiconductors. 39: 22-26. DOI: 10.1134/1.1852637 |
0.378 |
|
| 2005 |
Sadofyev YG, Ramamoorthy A, Bird JP, Johnson SR, Zhang YH. Large negative persistent photoconductivity in InAs/AlSb quantum wells Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1926407 |
0.409 |
|
| 2005 |
Shan W, Walukiewicz W, Ager JW, Yu KM, Zhang Y, Mao SS, Kling R, Kirchner C, Waag A. Pressure-dependent photoluminescence study of ZnO nanowires Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1901827 |
0.304 |
|
| 2005 |
Sadofyev YG, Ramamoorthy A, Bird JP, Johnson SR, Zhang YH. Infrared light-induced beating of Shubnikov-de Haas oscillations in MBE grown InAs/AlSb quantum wells Journal of Crystal Growth. 278: 661-665. DOI: 10.1016/J.Jcrysgro.2004.12.123 |
0.355 |
|
| 2004 |
Johnson SR, Sadofyev YG, Ding D, Cao Y, Chaparro SA, Franzreb K, Zhang Y. Sb-mediated growth of n- and p-type AlGaAs by molecular beam epitaxy Journal of Vacuum Science & Technology B. 22: 1436-1440. DOI: 10.1116/1.1705579 |
0.342 |
|
| 2004 |
Wang JB, Johnson SR, Chaparro SA, Ding D, Cao Y, Sadofyev YG, Zhang YH, Gupta JA, Guo CZ. Band edge alignment of pseudomorphic GaAs1-ySby on GaAs Physical Review B - Condensed Matter and Materials Physics. 70: 1-8. DOI: 10.1103/Physrevb.70.195339 |
0.374 |
|
| 2004 |
Sadofyev YG, Johnson SR, Chaparro SA, Cao Y, Ding D, Wang J-, Franzreb K, Zhang Y. Sb-mediated growth of Si-doped AlGaAs by molecular-beam epitaxy Applied Physics Letters. 84: 3546-3548. DOI: 10.1063/1.1715153 |
0.367 |
|
| 2004 |
Jiang DS, Bian LF, Liang XG, Chang K, Sun BQ, Johnson S, Zhang YH. Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells Journal of Crystal Growth. 268: 336-341. DOI: 10.1016/J.Jcrysgro.2004.04.051 |
0.414 |
|
| 2003 |
Zheng XH, Jiang DS, Johnson S, Zhang Y. Structural and optical properties of strain-compensated GaAsSb/GaAs quantum wells with high Sb composition Applied Physics Letters. 83: 4149-4151. DOI: 10.1063/1.1628395 |
0.438 |
|
| 2003 |
Luo XD, Huang JS, Xu ZY, Yang CL, Liu J, Ge WK, Zhang Y, Mascarenhas A, Xin HP, Tu CW. Alloy states in dilute GaAs1−xNx alloys (x<1%) Applied Physics Letters. 82: 1697-1699. DOI: 10.1063/1.1560872 |
0.335 |
|
| 2003 |
Johnson S, Guo CZ, Chaparro S, Sadofyev YG, Wang J, Cao Y, Samal N, Xu J, Yu SQ, Ding D, Zhang Y. GaAsSb/GaAs band alignment evaluation for long-wave photonic applications Journal of Crystal Growth. 251: 521-525. DOI: 10.1016/S0022-0248(02)02294-7 |
0.35 |
|
| 2002 |
Canonico M, Poweleit C, Menendez J, Debernardi A, Johnson S, Zhang Y. Anomalous LO phonon lifetime in AlAs. Physical Review Letters. 88: 215502-215502. PMID 12059485 DOI: 10.1103/Physrevlett.88.215502 |
0.341 |
|
| 2002 |
Leon R, Ibáñez J, Marcinkevičius S, Siegert J, Paskova T, Monemar B, Chaparro S, Navarro C, Johnson S, Zhang Y. Defect states in red-emitting InxAl1-xAs quantum dots Physical Review B. 66: 85331. DOI: 10.1103/Physrevb.66.085331 |
0.368 |
|
| 2002 |
Sadofyev YG, Ramamoorthy A, Naser B, Bird JP, Johnson SR, Zhang YH. Large g-factor enhancement in high-mobility InAs/AlSb quantum wells Applied Physics Letters. 81: 1833-1835. DOI: 10.1063/1.1504882 |
0.394 |
|
| 2002 |
Leon R, Chaparro S, Johnson S, Navarro C, Jin X, Zhang Y, Siegert J, Marcinkevičius S, Liao XZ, Zou J. Dislocation-induced spatial ordering of InAs quantum dots: Effects on optical properties Journal of Applied Physics. 91: 5826-5830. DOI: 10.1063/1.1467963 |
0.385 |
|
| 2001 |
Johnson S, Chaparro S, Wang J, Samal N, Cao Y, Chen ZB, Navarro C, Xu J, Yu SQ, Smith D, Guo CZ, Dowd P, Braun W, Zhang Y. GaAs-substrate-based long-wave active materials with type-II band alignments Journal of Vacuum Science & Technology B. 19: 1501-1504. DOI: 10.1116/1.1386380 |
0.416 |
|
| 2001 |
Ibáñez J, Leon R, Vu DT, Chaparro S, Johnson S, Navarro C, Zhang Y. Tunneling carrier escape from InAs self-assembled quantum dots Applied Physics Letters. 79: 2013-2015. DOI: 10.1063/1.1402642 |
0.386 |
|
| 2000 |
Johnson S, Dowd P, Braun W, Koelle U, Ryu CM, Beaudoin M, Guo CZ, Zhang Y. Long wavelength pseudomorphic InGaPAsSb type-I and type-II active layers grown on GaAs Journal of Vacuum Science & Technology B. 18: 1545-1548. DOI: 10.1116/1.591423 |
0.425 |
|
| 2000 |
Kozhevnikov M, Narayanamurti V, Reddy CV, Xin HP, Tu CW, Mascarenhas A, Zhang Y. Evolution ofGaAs1−xNxconduction states and giantAu/GaAs1−xNxSchottky barrier reduction studied by ballistic electron emission spectroscopy Physical Review B. 61: R7861-R7864. DOI: 10.1103/Physrevb.61.R7861 |
0.314 |
|
| 2000 |
Braun W, Dowd P, Guo CZ, Chen SL, Ryu CM, Koelle U, Johnson S, Zhang Y, Tomm JW, Elsässer T, Smith D. Strained InGaAs/GaPAsSb heterostructures grown on GaAs (001) for optoelectronic applications in the 1100–1550 nm range Journal of Applied Physics. 88: 3004-3014. DOI: 10.1063/1.1287233 |
0.479 |
|
| 2000 |
Leon R, Swift GM, Magness B, Taylor WA, Tang YS, Wang KL, Dowd P, Zhang Y. Changes in luminescence emission induced by proton irradiation: InGaAs/GaAs quantum wells and quantum dots Applied Physics Letters. 76: 2074-2076. DOI: 10.1063/1.126259 |
0.355 |
|
| 1999 |
Beaudoin M, Johnson SR, Boonzaayer MD, Zhang Y, Johs B. Use of spectroscopic ellipsometry for feedback control during the growth of thin AlAs layers Journal of Vacuum Science & Technology B. 17: 1233-1236. DOI: 10.1116/1.590728 |
0.355 |
|
| 1999 |
Braun W, Möller H, Johnson SR, Zhang Y. Reflection high-energy electron diffraction oscillations on rotating substrates Journal of Vacuum Science & Technology B. 17: 474-476. DOI: 10.1116/1.590579 |
0.34 |
|
| 1999 |
Dowd P, Braun W, Smith DJ, Ryu CM, Guo C-, Chen SL, Koelle U, Johnson SR, Zhang Y. Long wavelength (1.3 and 1.5 μm) photoluminescence from InGaAs/GaPAsSb quantum wells grown on GaAs Applied Physics Letters. 75: 1267-1269. DOI: 10.1063/1.124663 |
0.427 |
|
| 1999 |
Kozhevnikov M, Narayanamurti V, Mascarenhas A, Zhang Y, Olson JM, Smith DL. Ordering-induced band structure effects in GaInP2 studied by ballistic electron emission microscopy Applied Physics Letters. 75: 1128-1130. DOI: 10.1063/1.124618 |
0.334 |
|
| 1999 |
Braun W, Möller H, Zhang Y. Accurate growth rate determination on rotating substrates using electron diffraction dynamics Applied Physics Letters. 74: 138-140. DOI: 10.1063/1.122975 |
0.316 |
|
| 1999 |
Beaudoin M, Kelkar P, Boonzaayer MD, Braun W, Dowd P, Johnson S, Koelle U, Ryu CM, Zhang Y. Growth of resonant-cavity enhanced photodetectors by MBE with in situ feedback control using spectroscopic ellipsometry Journal of Crystal Growth. 201: 990-993. DOI: 10.1016/S0022-0248(98)01511-5 |
0.346 |
|
| 1999 |
Braun W, Möller H, Zhang Y. Phase-locked substrate rotation: new applications for RHEED in MBE growth Journal of Crystal Growth. 201: 50-55. DOI: 10.1016/S0022-0248(98)01277-9 |
0.337 |
|
| 1998 |
Braun W, Möller H, Zhang Y. Reflection high-energy electron diffraction during substrate rotation: A new dimension for in situ characterization Journal of Vacuum Science & Technology B. 16: 1507-1510. DOI: 10.1116/1.589976 |
0.303 |
|
| 1998 |
Johnson SR, Kuo C, Boonzaayer M, Braun W, Koelle U, Zhang Y, Roth J. In situ temperature control of molecular beam epitaxy growth using band-edge thermometry Journal of Vacuum Science & Technology B. 16: 1502-1506. DOI: 10.1116/1.589975 |
0.361 |
|
| 1996 |
Le HQ, Turner GW, Ochoa JR, Manfra MJ, Cook CC, Zhang Y. Broad wavelength tunability of grating‐coupled external cavity midinfrared semiconductor lasers Applied Physics Letters. 69: 2804-2806. DOI: 10.1063/1.116849 |
0.313 |
|
| 1995 |
Chen J, Zhang Y, Skromme B, Akimoto K, Pachuta SJ. Properties of the shallow O‐related acceptor level in ZnSe Journal of Applied Physics. 78: 5109-5119. DOI: 10.1063/1.360739 |
0.388 |
|
| 1995 |
Carlino E, Giannini C, Tapfer L, Catalano M, Tournié E, Zhang Y, Ploog KH. Structural characterization of lattice matched AlxIn1−xAs/InP and GayIn1−yAs/InP heterostructures by transmission electron microscopy and high‐resolution x‐ray diffraction Journal of Applied Physics. 78: 2403-2410. DOI: 10.1063/1.360162 |
0.397 |
|
| 1995 |
Skromme B, Zhang Y, Smith D, Sivananthan S. Growth and characterization of pseudomorphic single crystal zinc blende MnS Applied Physics Letters. 67: 2690-2692. DOI: 10.1063/1.114294 |
0.407 |
|
| 1995 |
Zhang Y. Continuous Wave Operation Of Inas/Inasxsb1-X Midinfrared Lasers Applied Physics Letters. 66: 118-120. DOI: 10.1063/1.113535 |
0.402 |
|
| 1994 |
Zhang Y, Chow DH. Improved crystalline quality of AlAsxSb1−x grown on InAs by modulated molecular‐beam epitaxy Applied Physics Letters. 65: 3239-3241. DOI: 10.1063/1.112424 |
0.422 |
|
| 1994 |
Zhang Y, Liu W, Skromme B, Cheng H, Shibli S, Tamargo M. Systematic investigation of shallow acceptor levels in ZnSe Journal of Crystal Growth. 138: 310-317. DOI: 10.1016/0022-0248(94)90827-3 |
0.307 |
|
| 1993 |
Zhang Y, Skromme BJ, Shibli SM, Tamargo MC. Properties of the As-related shallow acceptor level in heteroepitaxial ZnSe grown by molecular-beam epitaxy. Physical Review. B, Condensed Matter. 48: 10885-10892. PMID 10007388 DOI: 10.1103/Physrevb.48.10885 |
0.396 |
|
| 1993 |
Zhang Y, Skromme BJ, Cheng H. Band-to-acceptor transitions in the low-temperature-luminescence spectrum of Li-doped p-type ZnSe grown by molecular-beam epitaxy. Physical Review. B, Condensed Matter. 47: 2107-2121. PMID 10006250 DOI: 10.1103/Physrevb.47.2107 |
0.389 |
|
| 1993 |
Giannini C, Tapfer L, Tournié E, Zhang Y, Ploog KH. Analysis of epitaxial GaxIn1−xAs/InP and AlyIn1−yAs/InP interface region by high resolution x‐ray diffraction Applied Physics Letters. 62: 149-151. DOI: 10.1063/1.109354 |
0.351 |
|
| 1993 |
Chang Y, Tan I, Zhang Y, Merz J, Hu E, Frova A, Emiliani V. Luminescence efficiency of near‐surface quantum wells before and after ion‐gun hydrogenation Applied Physics Letters. 62: 2697-2699. DOI: 10.1063/1.109235 |
0.369 |
|
| 1993 |
Rinaldi R, Cingolani R, Ferrara M, Zhang Y, Ploog K. Momentum conservation in the luminescence of modulation-doped Ga x In1-x As-Al y In1-y As quantum wells Il Nuovo Cimento D. 15: 675-687. DOI: 10.1007/Bf02482402 |
0.382 |
|
| 1992 |
Zhang Y, Skromme BJ, Turco-Sandroff FS. Effects of thermal strain on the optical properties of heteroepitaxial ZnTe. Physical Review. B, Condensed Matter. 46: 3872-3885. PMID 10004114 DOI: 10.1103/Physrevb.46.3872 |
0.368 |
|
| 1992 |
Zhang Y, Ploog K. Optical spectroscopy of the two-dimensional electron gas in GaxIn1-xAs/AlyIn1-yAs single quantum wells. Physical Review B. 45: 14069-14075. PMID 10001526 DOI: 10.1103/Physrevb.45.14069 |
0.419 |
|
| 1992 |
Hummel SG, Zou Y, Beyler CA, Grodzinski P, Dapkus PD, McManus JV, Zhang Y, Skromme BJ, Lee WI. Characteristics of GaAs, AlGaAs, and InGaAs materials grown by metalorganic chemical vapor deposition using an on-demand hydride gas generator Applied Physics Letters. 60: 1483-1485. DOI: 10.1063/1.107278 |
0.407 |
|
| 1992 |
Jiang DS, Zhang Y, Abraham C, Syassen K, Xia JB, Ploog K. A study of resonant Raman scattering in GaInAs/AlInAs multiple quantum wells Superlattices and Microstructures. 12: 273-277. DOI: 10.1016/0749-6036(92)90351-5 |
0.364 |
|
| 1992 |
Heitmann D, Kern K, Demel T, Grambow P, Ploog K, Zhang Y. Spectroscopy of quantum dots and antidots Surface Science. 267: 245-252. DOI: 10.1016/0039-6028(92)91130-4 |
0.367 |
|
| 1991 |
Tournié E, Zhang Y, Pulsford NJ, Ploog K. Structural and optical properties of Al0.48In0.52As layers grown on InP by molecular beam epitaxy: Influence of the substrate temperature and of a buffer layer Journal of Applied Physics. 70: 7362-7369. DOI: 10.1063/1.349730 |
0.396 |
|
| 1991 |
Moro C, Ferrara M, Cingolani R, Zhang Y, Ploog K. Free-carrier plasma and optical amplification in undoped and modulation-doped Ga0.47In0.53As/Al0.48In0.52As multiple-quantum-well structures Journal of Applied Physics. 70: 3821-3828. DOI: 10.1063/1.349186 |
0.375 |
|
| 1991 |
Turco-Sandroff FS, Brasil MJSP, Nahory RE, Martin RJ, Zhang Y, Skromme B. Arsenic‐doped P‐type ZnTe grown by molecular beam epitaxy Applied Physics Letters. 59: 688-690. DOI: 10.1063/1.105366 |
0.388 |
|
| 1991 |
Kern K, Demel T, Heitmann D, Grambow P, Zhang Y, Ploog K. Quantum dots in In.47Ga.53AsInAlAsInP heterostructures Superlattices and Microstructures. 9: 11-14. DOI: 10.1016/0749-6036(91)90083-4 |
0.381 |
|
| 1991 |
Tournié E, Zhang Y, Ploog K. High-quality Al0.48In0.52As grown by molecular beam epitaxy at high InP-substrate temperature Materials Letters. 11: 343-347. DOI: 10.1016/0167-577X(91)90130-X |
0.41 |
|
| 1990 |
Zhang Y, Tapfer L, Ploog K. Erratum: High electron mobility in modulation-doped GaxIn 1-xAs/AIyIn1-xAs heterostructures with highly strained AlInAs grown by molecular beam epitaxy (Semiconductor Science and Technology (1990) 5 (590-595)) Semiconductor Science and Technology. 5: 529. DOI: 10.1088/0268-1242/5/7/529 |
0.343 |
|
| 1990 |
Zhang Y, Tapfer L, Ploog K. High electron mobility in modulation-doped GaxIn1-xAs/AlyIn1-yAs heterostructures with highly strained AlInAs grown by molecular beam epitaxy Semiconductor Science and Technology. 5: 590-595. DOI: 10.1088/0268-1242/5/6/023 |
0.404 |
|
| 1990 |
Cingolani R, Stolz W, Zhang Y, Ploog K. Radiative recombination processes and fermi edge singularity in modulation doped n-type GaInAs/AlInAs multiple quantum wells Journal of Luminescence. 46: 147-154. DOI: 10.1016/0022-2313(90)90015-4 |
0.371 |
|
| 1989 |
Cingolani R, Tapfer L, Zhang Y, Muralidharan R, Ploog K, Tejedor C. Spectroscopic investigation of the electronic states in narrow coupled GaAs/AlAs quantum wells with indirect band structure. Physical Review B. 40: 8319-8326. PMID 9991290 DOI: 10.1103/Physrevb.40.8319 |
0.301 |
|
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