| Year |
Citation |
Score |
| 2014 |
Yilmazoglu O, Evtukh A, Al-Daffaie S, Biethan J, Pavlidis D, Litovchenko V, Hartnagel HL. Electron field emission from nanostructured semiconductors under photo illumination Turkish Journal of Physics. 38: 543-562. DOI: 10.3906/Fiz-1407-1 |
0.355 |
|
| 2012 |
Jin C, Pavlidis D, Considine L. DC and High-Frequency Characteristics of GaN Schottky Varactors for Frequency Multiplication Ieice Transactions On Electronics. 95: 1348-1353. DOI: 10.1587/Transele.E95.C.1348 |
0.325 |
|
| 2012 |
Yilmazoglu O, Considine L, Joshi R, Mimura H, Pavlidis D, Hartnagel HL, Schneider JJ, Evtukh A, Semenenko M, Litovchenko V. Monochromatic electron-emission from planar AlN/GaN multilayers with carbon nanotube gate electrode Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 30: 042203. DOI: 10.1116/1.4732117 |
0.345 |
|
| 2012 |
Evtukh A, Yilmazoglu O, Litovchenko V, Ievtukh V, Hartnagel HL, Pavlidis D. GaN surface electron field emission efficiency enhancement by low-energy photon illumination Journal of Vacuum Science & Technology B. 30: 22206. DOI: 10.1116/1.3692253 |
0.308 |
|
| 2011 |
Stolz A, Cho E, Dogheche E, Androussi Y, Troadec D, Pavlidis D, Decoster D. Optical waveguide loss minimized into gallium nitride based structures grown by metal organic vapor phase epitaxy Applied Physics Letters. 98: 161903. DOI: 10.1063/1.3582055 |
0.373 |
|
| 2008 |
Seo S, Ghose K, Zhao GY, Pavlidis D. AIN/GaN metal insulator semiconductor field effect transistor on sapphire substrate Ieice Transactions On Electronics. 994-1000. DOI: 10.1093/Ietele/E91-C.7.994 |
0.471 |
|
| 2008 |
Sigmund J, Lampin J, Ivannikov V, Sydlo C, Feiginov M, Pavlidis D, Meissner P, Hartnagel HL. Low-Temperature Grown GaAsSb with Sub-Picosecond Photocarrier Lifetime for Continuous-Wave Terahertz Measurements Ieice Transactions On Electronics. 91: 1058-1062. DOI: 10.1093/Ietele/E91-C.7.1058 |
0.35 |
|
| 2008 |
Seo S, Zhao GY, Pavlidis D. Power characteristics of AIN/GaN MISFETs on sapphire substrate Electronics Letters. 44: 244-245. DOI: 10.1049/El:20083261 |
0.437 |
|
| 2006 |
Sigmund J, Pavlidis D, Hartnagel HL, Benker N, Fuess H. Nonstoichiometric growth and cluster formation in low temperature grown GaAsSb for terahertz-applications Journal of Vacuum Science & Technology B. 24: 1556-1558. DOI: 10.1116/1.2190677 |
0.307 |
|
| 2006 |
Cho E, Pavlidis D, Zhao G, Hubbard SM, Schwank J. Improvement of CO sensitivity in GaN-based gas sensors Ieice Transactions On Electronics. 1047-1051. DOI: 10.1093/Ietele/E89-C.7.1047 |
0.623 |
|
| 2006 |
Yilmazoglu O, Mutamba K, Pavlidis D, Mbarga MR. Strain Sensitivity of AlGaN/GaN HEMT Structures for Sensing Applications Ieice Transactions On Electronics. 89: 1037-1041. DOI: 10.1093/Ietele/E89-C.7.1037 |
0.356 |
|
| 2006 |
JW, Zhu X, Pavlidis D. Low-power InP/GaAsSb/InP DHBT cascode transimpedance amplifier with GBP/P/sub dc/ of 7.2 GHz/mW Electronics Letters. 42: 25-27. DOI: 10.1049/El:20062800 |
0.364 |
|
| 2006 |
Valizadeh P, Alekseev E, Pavlidis D, Yun F, Morkoç H. Anomalous effects of temperature and UV illumination on the operation of AlGaN/GaN MODFET Solid-State Electronics. 50: 282-286. DOI: 10.1016/J.Sse.2005.12.006 |
0.772 |
|
| 2005 |
Valizadeh P, Pavlidis D. Effects of RF and DC stress on AlGaN/GaN MODFETs: a low-frequency noise-based investigation Ieee Transactions On Device and Materials Reliability. 5: 555-563. DOI: 10.1109/Tdmr.2005.853515 |
0.748 |
|
| 2005 |
Seo S, Pavlidis D, Moon JS. Wideband balanced AlGaN/GaN HEMT MMIC low noise amplifier Electronics Letters. 41: 909-911. DOI: 10.1049/El:20051461 |
0.388 |
|
| 2005 |
Valizadeh P, Pavlidis D, Shiojima K, Makimura T, Shigekawa N. Low frequency noise of AlGaN/GaN MODFETs: A comparative study of surface, barrier and heterointerface effects Solid-State Electronics. 49: 1352-1360. DOI: 10.1016/J.Sse.2005.05.009 |
0.735 |
|
| 2005 |
Hubbard SM, Zhao G, Pavlidis D, Sutton W, Cho E. High-resistivity GaN buffer templates and their optimization for GaN-based HFETs Journal of Crystal Growth. 284: 297-305. DOI: 10.1016/J.Jcrysgro.2005.06.022 |
0.655 |
|
| 2004 |
Hubbard SM, Zhao G, Pavlidis D, Cho E, Sutton W. Optimization of GaN Channel Conductivity in AlGaN/GaN HFET Structures Grown by MOVPE Mrs Proceedings. 831. DOI: 10.1557/Proc-831-E11.11 |
0.615 |
|
| 2004 |
Zhao G, Hubbard S, Pavlidis D. Yellow Luminescence Centers of GaN Japanese Journal of Applied Physics. 43: 2471-2472. DOI: 10.1143/Jjap.43.2471 |
0.657 |
|
| 2004 |
Litvinov VI, Manasson A, Pavlidis D. Short-period intrinsic Stark GaN∕AlGaN superlattice as a Bloch oscillator Applied Physics Letters. 85: 600-602. DOI: 10.1063/1.1773913 |
0.345 |
|
| 2003 |
Syrbu NN, Tiginyanu IM, Ursaki VV, Zalamai VV, Popa V, Hubbard SM, Pavlidis D. Free excitons in strained MOCVD-grown GaN layers Mrs Internet Journal of Nitride Semiconductor Research. 8. DOI: 10.1557/S1092578300000442 |
0.628 |
|
| 2003 |
Hsu SSH, Pavlidis D. A comparison of low-frequency noise characteristics and noise sources in NPN and PNP InP-based heterojunction bipolar transistors Ieee Transactions On Electron Devices. 50: 1974-1982. DOI: 10.1109/Ted.2003.815367 |
0.319 |
|
| 2003 |
Ursaki VV, Tiginyanu IM, Syrbu NN, Zalamai VV, Hubbard SM, Pavlidis D. Sharp variations in the temperature dependence of optical reflectivity from AlN/GaN heterostructures Semiconductor Science and Technology. 18. DOI: 10.1088/0268-1242/18/2/101 |
0.6 |
|
| 2003 |
Ursaki VV, Tiginyanu IM, Zalamai VV, Hubbard SM, Pavlidis D. Optical characterization of AlN/GaN heterostructures Journal of Applied Physics. 94: 4813-4818. DOI: 10.1063/1.1609048 |
0.648 |
|
| 2003 |
Tiginyanu IM, Ursaki VV, Zalamai VV, Langa S, Hubbard SM, Pavlidis D, Föll H. Luminescence of GaN nanocolumns obtained by photon-assisted anodic etching Applied Physics Letters. 83: 1551-1553. DOI: 10.1063/1.1605231 |
0.653 |
|
| 2003 |
Ursaki VV, Tiginyanu IM, Ricci PC, Anedda A, Hubbard SM, Pavlidis D. Persistent photoconductivity and optical quenching of photocurrent in GaN layers under dual excitation Journal of Applied Physics. 94: 3875-3882. DOI: 10.1063/1.1604950 |
0.618 |
|
| 2003 |
Yilmazoglu O, Pavlidis D, Litvin YM, Hubbard SM, Tiginyanu IM, Mutamba K, Hartnagel HL, Litovchenko VG, Evtukh AA. Field emission from quantum size GaN structures Applied Surface Science. 220: 46-50. DOI: 10.1016/S0169-4332(03)00750-5 |
0.634 |
|
| 2002 |
Cui D, Hsu SSH, Pavlidis D. DC and high frequency characterization of metalorganic chemical vapor deposition (MOCVD) grown InP/InGaAs PNP heterojunction bipolar transistor Japanese Journal of Applied Physics. 41: 1143-1149. DOI: 10.1143/Jjap.41.1143 |
0.678 |
|
| 2002 |
Cui D, Pavlidis D, Sawdai D, Chin P, Block T. Technology and first electrical characteristics of complementary NPN and PNP InAlAs/InGaAs heterojunction bipolar transistors Japanese Journal of Applied Physics. 41: 1124-1130. DOI: 10.1143/Jjap.41.1124 |
0.659 |
|
| 2002 |
Matulionis A, Liberis J, Ardaravičius L, Smart J, Pavlidis D, Hubbard S, Eastman LF. Hot-phonon limited electron energy relaxation in AlN/GaN International Journal of High Speed Electronics and Systems. 12: 459-468. DOI: 10.1142/S0129156402001381 |
0.63 |
|
| 2002 |
Hsu SSH, Pavlidis D, Sawdai D. Low-frequency noise characteristics of p-n-p InAlAs/InGaAs HBTs Ieee Electron Device Letters. 23: 688-690. DOI: 10.1109/Led.2002.805756 |
0.333 |
|
| 2002 |
Cui D, Pavlidis D, Hsu SSH, Sawdai D, Chin P, Block T. First demonstration of monolithic InP-based HBT amplifier with PNP active load Ieee Electron Device Letters. 23: 114-117. DOI: 10.1109/55.988809 |
0.649 |
|
| 2002 |
Cui D, Pavlidis D, Hsu SSH, Eisenbach A. Comparison of DC and high-frequency performance of zinc-doped and carbon-doped InP/InGaAs HBTs grown by metalorganic chemical vapor deposition Ieee Transactions On Electron Devices. 49: 725-732. DOI: 10.1109/16.998577 |
0.368 |
|
| 2002 |
Cui D, Hubbard SM, Pavlidis D, Eisenbach A, Chelli C. Impact of doping and MOCVD conditions on minority carrier lifetime of zinc- and carbon-doped InGaAs and its applications to zinc- and carbon-doped InP/InGaAs heterostructure bipolar transistors Semiconductor Science and Technology. 17: 503-509. DOI: 10.1088/0268-1242/17/6/301 |
0.742 |
|
| 2002 |
Hubbard SM, Pavlidis D, Valiaev V, Stevens-Kalceff MA, Tiginyanu IM. Electrical characterization and cathodoluminescence microanalysis of AlN/GaN heterostructures Materials Science and Engineering B-Advanced Functional Solid-State Materials. 91: 336-340. DOI: 10.1016/S0921-5107(01)01045-5 |
0.655 |
|
| 2002 |
Cui D, Hsu S, Pavlidis D, Chin P, Block T. A Ka-band monolithic low phase noise coplanar waveguide oscillator using InAlAs/InGaAs HBT Solid-State Electronics. 46: 249-253. DOI: 10.1016/S0038-1101(01)00293-3 |
0.647 |
|
| 2002 |
Hubbard SM, Pavlidis D, Valiaev V, Eisenbach A. Metal-organic vapor phase epitaxy growth and characterization of AIN/GaN heterostructures Journal of Electronic Materials. 31: 395-401. DOI: 10.1007/S11664-002-0090-Y |
0.65 |
|
| 2002 |
Matulionis A, Liberis J, Ardaravičius L, Ramonas M, Zubkute T, Matulioniene I, Eastman LF, Shealy JR, Smart J, Pavlidis D, Hubbard S. Fast and ultrafast processes in AlGaN/GaN channels Physica Status Solidi (B) Basic Research. 234: 826-829. DOI: 10.1002/1521-3951(200212)234:3<826::Aid-Pssb826>3.0.Co;2-4 |
0.627 |
|
| 2001 |
Park J, Pavlidis D, Mohammadi S, Guyaux J-, Garcia J-. Improved emitter transit time using AlGaAs-GaInP composite emitter in GaInP/GaAs heterojunction bipolar transistors Ieee Transactions On Electron Devices. 48: 1297-1303. DOI: 10.1109/16.930642 |
0.529 |
|
| 2001 |
Tiginyanu IM, Sarua A, Irmer G, Monecke J, Hubbard SM, Pavlidis D, Valiaev V. Fröhlich modes in GaN columnar nanostructures Physical Review B. 64: 233317. DOI: 10.1103/Physrevb.64.233317 |
0.613 |
|
| 2000 |
Mohammadi S, Park J-, Pavlidis D, Guyaux J-, Garcia JC. Design optimization and characterization of high-gain GaInP/GaAs HBT distributed amplifiers for high-bit-rate telecommunication Ieee Transactions On Microwave Theory and Techniques. 48: 1038-1044. DOI: 10.1109/22.904742 |
0.528 |
|
| 2000 |
Alekseev E, Pavlidis D, Nguyen NX, Nguyen C, Grider DE. Power performance and scalability of AlGaN/GaN power MODFETs Ieee Transactions On Microwave Theory and Techniques. 48: 1694-1700. DOI: 10.1109/22.873897 |
0.724 |
|
| 2000 |
Mohammadi S, Pavlidis D, Bayraktaroglu B. Relation between low-frequency noise and long-term reliability of single AlGaAs/GaAs power HBTs Ieee Transactions On Electron Devices. 47: 677-686. DOI: 10.1109/16.830979 |
0.396 |
|
| 2000 |
Hashizume T, Alekseev E, Pavlidis D, Boutros KS, Redwing J. Capacitance–voltage characterization of AlN/GaN metal–insulator–semiconductor structures grown on sapphire substrate by metalorganic chemical vapor deposition Journal of Applied Physics. 88: 1983-1986. DOI: 10.1063/1.1303722 |
0.733 |
|
| 2000 |
Alekseev E, Pavlidis D. Microwave potential of GaN-based Gunn devices Electronics Letters. 36: 176-178. DOI: 10.1049/El:20000200 |
0.741 |
|
| 2000 |
Mohammadi S, Hubbard S, Chelli C, Pavlidis D, Bayraktaroglu B. Photo-luminescence and transmission electron microscope studies of low- and high-reliability AlGaAs/GaAs HBTs Solid-State Electronics. 44: 739-746. DOI: 10.1016/S0038-1101(99)00292-0 |
0.666 |
|
| 2000 |
Alekseev E, Pavlidis D. DC and high-frequency performance of AlGaN/GaN Heterojunction Bipolar Transistors Solid-State Electronics. 44: 245-252. DOI: 10.1016/S0038-1101(99)00230-0 |
0.756 |
|
| 2000 |
Park J, Mohammadi S, Pavlidis D, Dua C, Guyaux J, Garcia J. Monolithic broadband transimpedance amplifiers and their high frequency small and large signal characteristics using CBE-based GaInP/GaAs HBT technology Solid-State Electronics. 44: 2059-2067. DOI: 10.1016/S0038-1101(00)00074-5 |
0.547 |
|
| 2000 |
Park J, Mohammadi S, Pavlidis D. Impact of Ni/Ge/Au/Ti/Au and Ti/Pt/Au collector metal on GaInP/GaAs HBT characteristics Solid-State Electronics. 44: 1847-1852. DOI: 10.1016/S0038-1101(00)00030-7 |
0.5 |
|
| 2000 |
Alekseev E, Pavlidis D. Large-signal microwave performance of GaN-based NDR diode oscillators Solid-State Electronics. 44: 941-947. DOI: 10.1016/S0038-1101(00)00011-3 |
0.762 |
|
| 1999 |
Krawczyk S, Bejar M, Khoukh A, Blanchet R, Sermage B, Cui D, Pavlidis D. New Scanning Photoluminescence Technique for Quantitative Mapping the Surface Recombination Velocity in InP and Related Materials Japanese Journal of Applied Physics. 38: 992-995. DOI: 10.1143/Jjap.38.992 |
0.59 |
|
| 1999 |
Ziegler V, Berg M, Tobler H, Woelk C, Deufel R, Trasser A, Schumacher H, Alekseev E, Pavlidis D, Dickmann J. Low-Power Consumption InGaAs PIN Diode Switches for V-band Applications. Japanese Journal of Applied Physics. 38: 1208-1210. DOI: 10.1143/Jjap.38.1208 |
0.726 |
|
| 1999 |
Pavlidis D, Sawdai D, Cui D. NPN-PNP InP HBT technology and applications to low power wireless systems Proceedings of Spie. 3861: 11-20. DOI: 10.1117/12.373015 |
0.607 |
|
| 1999 |
Sawdai D, Yang K, Hsu SS-, Pavlidis D, Haddad GI. Power performance of InP-based single and double heterojunction bipolar transistors Ieee Transactions On Microwave Theory and Techniques. 47: 1449-1456. DOI: 10.1109/22.780393 |
0.338 |
|
| 1999 |
Alekseev E, Eisenbach A, Pavlidis D. Low interface state density AlN/GaN MISFETs Electronics Letters. 35: 2145-2146. DOI: 10.1049/El:19991407 |
0.728 |
|
| 1999 |
Sawdai D, Pavlidis D. InP-based complementary HBT amplifiers for use in communication systems Solid-State Electronics. 43: 1507-1512. DOI: 10.1016/S0038-1101(99)00096-9 |
0.386 |
|
| 1999 |
Hsu SSH, Bayraktaroglu B, Pavlidis D. Comparison of conventional and thermally-stable cascode (TSC) AlGaAs/GaAs HBTs for microwave power applications Solid-State Electronics. 43: 1429-1436. DOI: 10.1016/S0038-1101(99)00085-4 |
0.34 |
|
| 1999 |
Pavlidis D. Reliability characteristics of GaAs and InP-based heterojunction bipolar transistors ☆ Microelectronics Reliability. 39: 1801-1808. DOI: 10.1016/S0026-2714(99)00188-2 |
0.39 |
|
| 1998 |
Morkoç H, Cingolani R, Lambrecht W, Gil B, Jiang H, Lin J, Pavlidis D, Shenai K. Material Properties of GaN in the Context of Electron Devices Mrs Proceedings. 537. DOI: 10.1557/S1092578300002209 |
0.375 |
|
| 1998 |
Marsh P, Pavlidis D, Hong K. InGaAs-Schottky contacts made by in situ plated and evaporated Pt-an analysis based on DC and noise characteristics Ieee Transactions On Electron Devices. 45: 349-360. DOI: 10.1109/16.658666 |
0.388 |
|
| 1998 |
Bru-Chevallier C, Baltagi Y, Guillot G, Hong K, Pavlidis D. Application of photoreflectance spectroscopy to the study of interface roughness in InGaAs/InAlAs heterointerfaces Journal of Applied Physics. 84: 5291-5295. DOI: 10.1063/1.368816 |
0.382 |
|
| 1998 |
Cao J, Pavlidis D, Park Y, Singh J, Eisenbach A. Improved quality GaN by growth on compliant silicon-on-insulator substrates using metalorganic chemical vapor deposition Journal of Applied Physics. 83: 3829-3834. DOI: 10.1063/1.366613 |
0.355 |
|
| 1998 |
Garcia JC, Dua C, Mohammadi S, Park JW, Pavlidis D. Growth chacteristics of hydride-free chemical beam epitaxy and application to GaInP/GaAs heterojunction bipolar transistors Journal of Electronic Materials. 27: 442-445. DOI: 10.1007/S11664-998-0175-3 |
0.437 |
|
| 1997 |
Philippe A, Bru-Chevallier C, Guillot G, Cao J, Pavlidis D, Eisenbach A. Photoluminescence Characteristics of GaN Layers Grown on Soi Substrates and Relation to Material Properties Mrs Proceedings. 482: 307. DOI: 10.1557/Proc-482-307 |
0.43 |
|
| 1997 |
Cao J, Pavlidis D, Eisenbach A, Philippe A, Bru-Chevallier C, Guillot G. Photoluminescence properties of GaN grown on compliant silicon-on-insulator substrates Applied Physics Letters. 71: 3880-3882. DOI: 10.1063/1.120532 |
0.386 |
|
| 1997 |
Horna J, Pavlidis D, Park Y, Hartnagel HL. Scanning tunneling microscopy characterization of metalorganic chemical vapor deposition grown GaN Materials Science and Engineering B-Advanced Functional Solid-State Materials. 44: 414-418. DOI: 10.1016/S0921-5107(96)01791-6 |
0.397 |
|
| 1997 |
Pavlidis D, Alekseev E, Hong K, Cui D. InP-based millimeter-wave PIN diodes for switching and phase-shifting application Solid-State Electronics. 41: 1635-1639. DOI: 10.1016/S0038-1101(97)00170-6 |
0.766 |
|
| 1997 |
Wang K, Pavlidis D, Cao J. Effect of in situ thermal cycle annealing on GaN film properties grown on (001) and (111) GaAs, and sapphire substrates Journal of Electronic Materials. 26: 1-6. DOI: 10.1007/S11664-997-0123-7 |
0.354 |
|
| 1996 |
Samelis A, Pavlidis D, Chandrasekhar S, Lunardi LM, Rios J. Large-signal characteristics of InP-based heterojunction bipolar transistors and optoelectronic cascode transimpedance amplifiers Ieee Transactions On Electron Devices. 43: 2053-2061. DOI: 10.1109/16.544374 |
0.376 |
|
| 1996 |
Kwon Y, Pavlidis D, Hein K, Brock T. Striped-channel InAlAs/InGaAs HEMTs with shallow-grating structures Ieee Transactions On Electron Devices. 43: 2046-2052. DOI: 10.1109/16.544373 |
0.327 |
|
| 1996 |
Kwon Y, Pavlidis D. Delay time analysis of submicron InP-based HEMT's Ieee Transactions On Electron Devices. 43: 228-237. DOI: 10.1109/16.481722 |
0.302 |
|
| 1996 |
Wang K, Pavlidis D, Singh J. Initial stages of GaN/GaAs(100) growth by metalorganic chemical vapor deposition Journal of Applied Physics. 80: 1823-1829. DOI: 10.1063/1.362994 |
0.323 |
|
| 1995 |
Tutt MN, Pavlidis D, Khatibzadeh A, Bayraktaroglu B. The role of baseband noise and its upconversion in HBT oscillator phase noise Ieee Transactions On Microwave Theory and Techniques. 43: 1461-1471. DOI: 10.1109/22.392903 |
0.313 |
|
| 1995 |
Kwon Y, Pavlidis D, Brock TL, Streit DC. Experimental and theoretical characteristics of high performance pseudomorphic double heterojunction InAlAs/In/sub 0.7/Ga/sub 0.3/As/InAlAs HEMT's Ieee Transactions On Electron Devices. 42: 1017-1025. DOI: 10.1109/16.387231 |
0.401 |
|
| 1995 |
Tutt MN, Pavlidis D, Khatibzadeh A, Bayraktaroglu B. Low frequency noise characteristics of self-aligned AlGaAs/GaAs power heterojunction bipolar transistors Ieee Transactions On Electron Devices. 42: 219-230. DOI: 10.1109/16.370076 |
0.328 |
|
| 1995 |
Hong CH, Pavlidis D, Brown SW, Rand SC. Photoluminescence investigation of GaN films grown by metalorganic chemical vapor deposition on (100) GaAs Journal of Applied Physics. 77: 1705-1709. DOI: 10.1063/1.358862 |
0.353 |
|
| 1995 |
Hong CH, Pavlidis D, Hong K, Wang K. Phase-controlled metal-organic chemical vapor deposition epitaxial growth of GaN on GaAs(100) using NH3 Materials Science and Engineering B-Advanced Functional Solid-State Materials. 32: 69-74. DOI: 10.1016/0921-5107(94)01149-4 |
0.346 |
|
| 1995 |
Pavlidis D, Hong K, Hein K, Kwon Y. Material and device properties of MOCVD grown {InAlAs}/{InGaAs} HEMTs Solid-State Electronics. 38: 1697-1701. DOI: 10.1016/0038-1101(95)00045-U |
0.433 |
|
| 1995 |
Hong CH, Wang K, Pavlidis D. Epitaxial growth of cubic GaN on (111) GaAs by metalorganic chemical vapor deposition Journal of Electronic Materials. 24: 213-218. DOI: 10.1007/Bf02659677 |
0.391 |
|
| 1994 |
Brown SW, Rand SC, Hong C, Pavlidis D. Raman Scattering and X-Ray Diffraction Studies of Gallium Nitride Films Grown on (100) Gallium Arsenide Mrs Proceedings. 339. DOI: 10.1557/Proc-339-503 |
0.341 |
|
| 1994 |
Kwon Y, Pavlidis D, Marsh P, Brock T, Streit DC. A 100-GHz monolithic cascode InAlAs/InGaAs HEMT oscillator Ieee Microwave and Guided Wave Letters. 4: 135-137. DOI: 10.1109/75.289518 |
0.391 |
|
| 1994 |
Ng GI, Pavlidis D, Samelis A, Pehlke D, Garcia JC, Hirtz JP. A comparative study of GaInP/GaAs heterojunction bipolar transistors grown by CBE using TBA/TBP and AsH/sub 3//PH/sub 3/ sources Ieee Electron Device Letters. 15: 380-382. DOI: 10.1109/55.320974 |
0.345 |
|
| 1994 |
Hong K, Marsh PF, Ng G, Pavlidis D, Hong C. Optimization of MOVPE grown In/sub x/Al/sub 1-x/As/In/sub 0.53/Ga/sub 0.47/As planar heteroepitaxial Schottky diodes for terahertz applications Ieee Transactions On Electron Devices. 41: 1489-1497. DOI: 10.1109/16.310098 |
0.383 |
|
| 1994 |
Costa D, Tutt MN, Khatibzadeh A, Pavlidis D. Tradeoff between 1/f noise and microwave performance in AlGaAs/GaAs heterojunction bipolar transistors Ieee Transactions On Electron Devices. 41: 1347-1350. DOI: 10.1109/16.297728 |
0.357 |
|
| 1994 |
Chan YJ, Pavlidis D. Trap Studies in GalnP/GaAs and AlGaAs/GaAs HEMT’s by Means of Low-Frequency Noise and Transconductance Dispersion Characterizations Ieee Transactions On Electron Devices. 41: 637-642. DOI: 10.1109/16.285009 |
0.39 |
|
| 1994 |
Jakumeit J, Tutt M, Pavlidis D. Quantum state transfer in double‐quantum‐well devices Journal of Applied Physics. 76: 7428-7436. DOI: 10.1063/1.357969 |
0.354 |
|
| 1994 |
Wang K, Singh J, Pavlidis D. Theoretical study of GaN growth: A Monte Carlo approach Journal of Applied Physics. 76: 3502-3510. DOI: 10.1063/1.357479 |
0.324 |
|
| 1993 |
Ducroquet F, Guillot G, Hong K, Hong CH, Pavlidis D, Gauneau M. Deep Level Characterization of LP-MOCVD Grown Al 0.48 In 0.52 As Mrs Proceedings. 325: 235. DOI: 10.1557/Proc-325-235 |
0.35 |
|
| 1993 |
Chau H, Pavlidis D, Brock T. Reactive ion etching‐induced damage studies and application to self‐aligned InP/InGaAs heterojunction bipolar transistor technology Journal of Vacuum Science & Technology B. 11: 187-194. DOI: 10.1116/1.586702 |
0.316 |
|
| 1993 |
Gutierrez-Aitken AL, Bhattcharya P, Chen YC, Pavlidis D, Brock T. High-performance monolithic pin-MODFET transimpedance photoreceiver Ieee Photonics Technology Letters. 5: 913-915. DOI: 10.1109/68.238252 |
0.366 |
|
| 1993 |
Kwon Y, Pavlidis D, Brock TL, Streit DC. A D-band monolithic fundamental oscillator using InP-based HEMT's Ieee Transactions On Microwave Theory and Techniques. 41: 2336-2344. DOI: 10.1109/22.260726 |
0.417 |
|
| 1993 |
Kwon Y, Pavlidis D, Marsh P, Ng G-, Brock TL. Experimental characteristics and performance analysis of monolithic InP-based HEMT mixers at W-band Ieee Transactions On Microwave Theory and Techniques. 41: 1-8. DOI: 10.1109/22.210222 |
0.374 |
|
| 1993 |
Chau H-, Pavlidis D, Hu J, Tomizawa K. Breakdown-speed considerations in InP/InGaAs single- and double-heterostructure bipolar transistors Ieee Transactions On Electron Devices. 40: 2-8. DOI: 10.1109/16.249416 |
0.39 |
|
| 1993 |
Kuo J, Chan Y, Pavlidis D. Modulation‐doped In0.48Al0.52P/In0.2Ga0.8As field‐effect transistors Applied Physics Letters. 62: 1105-1107. DOI: 10.1063/1.108756 |
0.427 |
|
| 1993 |
Pavlidis D. Material related issues and their characterization with a view to III-V heterojunction device optimization Materials Science and Engineering B-Advanced Functional Solid-State Materials. 20: 1-8. DOI: 10.1016/0921-5107(93)90386-2 |
0.376 |
|
| 1993 |
Munns GO, Sherwin ME, Kwon Y, Brock T, Chen WL, Pavlidis D, Haddad GI. Parametric investigation of InGaAs/InAlAs HEMTs grown by CBE Journal of Crystal Growth. 127: 25-28. DOI: 10.1016/0022-0248(93)90570-M |
0.477 |
|
| 1992 |
Samelis A, Pavlidis D. Mechanisms determining third order intermodulation distortion in AlGaAs/GaAs heterojunction bipolar transistors Ieee Transactions On Microwave Theory and Techniques. 40: 2374-2380. DOI: 10.1109/22.179904 |
0.335 |
|
| 1992 |
Pehlke DR, Pavlidis D. Evaluation of the factors determining HBT high-frequency performance by direct analysis of S-parameter data Ieee Transactions On Microwave Theory and Techniques. 40: 2367-2373. DOI: 10.1109/22.179903 |
0.333 |
|
| 1992 |
Chau H-, Hu J, Pavlidis D, Tomizawa K. Breakdown-speed considerations in AlGaAs/GaAs heterojunction bipolar transistors with special collector designs Ieee Transactions On Electron Devices. 39: 2711-2719. DOI: 10.1109/16.168753 |
0.317 |
|
| 1992 |
Hu J, Pavlidis D, Tomizawa K. Monte Carlo studies of the effect of emitter junction grading on the electron transport in InAlAs/InGaAs heterojunction bipolar transistors Ieee Transactions On Electron Devices. 39: 1273-1281. DOI: 10.1109/16.137304 |
0.345 |
|
| 1992 |
Ng GI, Pavlidis D, Tutt M, Weiss RM, Marsh P. Low-frequency noise characteristics of lattice-matched (x=0.53) and strained (x>0.53) In/sub 0.52/Al/sub 0.48/As/InxGa/sub 1-/xAs HEMT's Ieee Transactions On Electron Devices. 39: 523-532. DOI: 10.1109/16.123473 |
0.314 |
|
| 1992 |
Chan Y-, Pavlidis D. Single and dual p-doped channel In/sub 0.52/Al/sub 0.48/ As/In/sub x/Ga/sub 1-x/As (x=0.53, 0.65) FET's and the role of doping Ieee Transactions On Electron Devices. 39: 466-472. DOI: 10.1109/16.123464 |
0.352 |
|
| 1992 |
Chau H, Pavlidis D. A physics‐based fitting and extrapolation method for measured impact ionization coefficients in III‐V semiconductors Journal of Applied Physics. 72: 531-538. DOI: 10.1063/1.351884 |
0.334 |
|
| 1992 |
Munns GO, Sherwin ME, Brock T, Haddad GI, Kwon Y, Ng GI, Pavlidis D. InAlAs/InGaAs/InP sub-micron HEMTs grown by CBE Journal of Crystal Growth. 120: 184-188. DOI: 10.1016/0022-0248(92)90388-Y |
0.425 |
|
| 1991 |
Chan Y-, Pavlidis D, Ng G-. The influence of gate-feeder/mesa-edge contacting on sidegating effects in In/sub 0.52/Al/sub 0.48/ As/In/sub 0.53/Ga/sub 0.47/As heterostructure FET's Ieee Electron Device Letters. 12: 360-362. DOI: 10.1109/55.103607 |
0.344 |
|
| 1991 |
Zebda Y, Lai R, Bhattacharya P, Pavlidis D, Berger P, Brock T. Monolithically integrated InP-based front-end photoreceivers Ieee Transactions On Electron Devices. 38: 1324-1333. DOI: 10.1109/16.81623 |
0.381 |
|
| 1991 |
Ng GI, Pavlidis D. Frequency-Dependent Characteristics and Trap Studies of Lattice-Matched (x = 0.53) and Strained (x > 0.53) In<inf>0.52</inf>A1<inf>0.48</inf>As/In<inf>x</inf>Ga<inf>1-x</inf>, As HEMT’s Ieee Transactions On Electron Devices. 38: 862-870. DOI: 10.1109/16.75216 |
0.318 |
|
| 1991 |
Chau H-, Pavlidis D, Tomizawa K. Theoretical analysis of HEMT breakdown dependence on device design parameters Ieee Transactions On Electron Devices. 38: 213-221. DOI: 10.1109/16.69897 |
0.396 |
|
| 1991 |
Hong K, Pavlidis D. Self-consistent analysis of lattice-matched and pseudomorphic quantum-well emission transistors Journal of Applied Physics. 69: 2662-2666. DOI: 10.1063/1.348660 |
0.4 |
|
| 1991 |
Lai R, Bhattacharya PK, Pavlidis D, Brock T. Monolithically integrated planar front-end photoreceivers with 0.25 mu m gate pseudomorphic In/sub 0.60/Ga/sub 0.40/As/In/sub 0.52/Al/sub 0.48/As/InP modulation-doped field-effect transistors Electronics Letters. 27: 364-366. DOI: 10.1049/El:19910230 |
0.391 |
|
| 1990 |
Chan Y, Pavlidis D, Razeghi M, Omnes F. Ga/sub 0.51/In/sub 0.49/P/GaAs HEMT's exhibiting good electrical performance at cryogenic temperatures Ieee Transactions On Electron Devices. 37: 2141-2147. DOI: 10.1109/16.59902 |
0.449 |
|
| 1990 |
Tomizawa K, Pavlidis D. Transport equation approach for heterojunction bipolar transistors Ieee Transactions On Electron Devices. 37: 519-529. DOI: 10.1109/16.47753 |
0.34 |
|
| 1990 |
Razeghi M, Omnes F, Defour M, Maurel P, Hu J, Wolk E, Pavlidis D. High performance GaAs/GaInP heterostructure bipolar transistors grown by low-pressure metal-organic chemical vapour deposition Semiconductor Science and Technology. 5: 278-280. DOI: 10.1088/0268-1242/5/3/017 |
0.392 |
|
| 1990 |
Razeghi M, Omnes F, Defour M, Maurel P, Bove P, Chan YJ, Pavlidis D. The first fabrication of n- and p-type Ga0.49In0.51P/Ga(In)As lattice matched and strained HIGFET structures grown by MOCVD Semiconductor Science and Technology. 5: 274-277. DOI: 10.1088/0268-1242/5/3/016 |
0.363 |
|
| 1990 |
Pamulapati J, Lai R, Ng GI, Chen YC, Berger PR, Bhattacharya PK, Singh J, Pavlidis D. The relation of the performance characteristics of pseudomorphic In0.53+xGa0.47−xAs/In0.52Al0.48As (0≤x≤0.32) modulation‐doped field‐effect transistors to molecular‐beam epitaxial growth modes Journal of Applied Physics. 68: 347-350. DOI: 10.1063/1.347140 |
0.376 |
|
| 1990 |
Zebda Y, Bhattacharya PK, Pavlidis D, Harrang JP. Performance characteristics of In0.6Ga0.4As/In0.52Al0.48As modulation‐doped field‐effect transistor monolithically integrated with In0.53Ga0.47As p‐i‐n photodiodes Journal of Applied Physics. 68: 1918-1920. DOI: 10.1063/1.346584 |
0.309 |
|
| 1990 |
Kwon Y, Pavlidis D, Tutt M, Ng GI, Lai R, Brock T. W-band monolithic oscillator using InAlAs/InGaAs HEMT Electronics Letters. 26: 1425-1426. DOI: 10.1049/El:19900914 |
0.361 |
|
| 1990 |
Weiss M, Ng GI, Pavlidis D. New generation MMIC amplifier using InGaAs/InAlAs HEMTs Electronics Letters. 26: 264-266. DOI: 10.1049/El:19900176 |
0.336 |
|
| 1989 |
Hu J, Tomizawa K, Pavlidis D. Monte Carlo approach to transient analysis of HBTs with different collector designs Ieee Electron Device Letters. 10: 55-57. DOI: 10.1109/55.32427 |
0.328 |
|
| 1989 |
Ng GI, Pavlidis D, Tutt M, Oh J-, Bhattacharya PK. Improved strained HEMT characteristics using double-heterojunction In/sub 0.65/Ga/sub 0.35/As/In/sub 0.52/Al/sub 0.48/As design Ieee Electron Device Letters. 10: 114-116. DOI: 10.1109/55.31686 |
0.365 |
|
| 1989 |
Chau H-, Pavlidis D, Cazaux J-, Graffeuil J. Studies of the DC, low-frequency, and microwave characteristics of uniform and step-doped GaAs/AlGaAs HEMTs Ieee Transactions On Electron Devices. 36: 2288-2298. DOI: 10.1109/16.40913 |
0.428 |
|
| 1989 |
Hu J, Tomizawa K, Pavlidis D. Transient Monte Carlo analysis and application to heterojunction bipolar transistor switching Ieee Transactions On Electron Devices. 36: 2138-2145. DOI: 10.1109/16.40893 |
0.351 |
|
| 1988 |
Ng GI, Hong W-, Pavlidis D, Tutt M, Bhattacharya PK. Characteristics of strained In/sub 0.65/Ga/sub 0.35/As/In/sub 0/./sub 52/Al/sub 0/./sub 48/As HEMT with optimized transport parameters Ieee Electron Device Letters. 9: 439-441. DOI: 10.1109/55.6938 |
0.316 |
|
| 1988 |
Zebda Y, Lipa R, Tutt M, Pavlidis D, Bhattacharya PK, Pamulapati J, Oh JE. Theoretical and experimental studies of monolithically integrated pseudomorphic InGaAs/AlGaAs MODFET-APD photoreceivers Ieee Transactions On Electron Devices. 35: 2435. DOI: 10.1109/16.8848 |
0.418 |
|
| 1988 |
Cazaux J-, Ng G-, Pavlidis D, Chau H-. An analytical approach to the capacitance-voltage characteristics of double-heterojunction HEMTs Ieee Transactions On Electron Devices. 35: 1223-1231. DOI: 10.1109/16.2541 |
0.39 |
|
| 1988 |
Pataut G, Pavlidis D. X-band varactor tuned monolithic GaAs FET oscillators† International Journal of Electronics. 64: 731-751. DOI: 10.1080/00207218808962847 |
0.419 |
|
| 1988 |
Ng GI, Pavlidis D, Quillec M, Chan YJ, Jaffe MD, Singh J. Study of the consequence of excess indium in the active channel of InGaAs/InAlAs high electron mobility transistors on device properties Applied Physics Letters. 52: 728-730. DOI: 10.1063/1.99361 |
0.348 |
|
| 1988 |
Hong W‐, Ng GI, Bhattacharya PK, Pavlidis D, Willing S, Das B. Low‐ and high‐field transport properties of pseudomorphic InxGa1−xAs/In0.52Al0.48As (0.53≤x≤0.65) modulation‐doped heterostructures Journal of Applied Physics. 64: 1945-1949. DOI: 10.1063/1.341748 |
0.32 |
|
| Show low-probability matches. |
