R. Stanley Williams - Publications

Affiliations: 
Hewlett-Packard 
 Chemistry University of California, Los Angeles, Los Angeles, CA 
Area:
Information & Quantum Systems
Website:
http://www.hpl.hp.com/people/stan_williams/

142 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2016 Diaz Leon JJ, Fryauf DM, Cormia RD, Zhang MM, Samuels K, Williams RS, Kobayashi NP. Reflectometry-ellipsometry reveals thickness, growth rate and phase composition in oxidation of copper. Acs Applied Materials & Interfaces. PMID 27505052 DOI: 10.1021/acsami.6b06626  0.36
2016 Merced-Grafals EJ, Dávila N, Ge N, Williams RS, Strachan JP. Repeatable, accurate, and high speed multi-level programming of memristor 1T1R arrays for power efficient analog computing applications. Nanotechnology. 27: 365202. PMID 27479054 DOI: 10.1088/0957-4484/27/36/365202  0.48
2016 Kumar S, Graves CE, Strachan JP, Grafals EM, Kilcoyne AL, Tyliszczak T, Weker JN, Nishi Y, Williams RS. Memristors: Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors (Adv. Mater. 14/2016). Advanced Materials (Deerfield Beach, Fla.). 28: 2771. PMID 27062166 DOI: 10.1002/adma.201670096  0.48
2016 Yi W, Savel'ev SE, Medeiros-Ribeiro G, Miao F, Zhang MX, Yang JJ, Bratkovsky AM, Williams RS. Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors. Nature Communications. 7: 11142. PMID 27041485 DOI: 10.1038/ncomms11142  0.4
2016 Kumar S, Graves CE, Strachan JP, Grafals EM, Kilcoyne AL, Tyliszczak T, Weker JN, Nishi Y, Williams RS. Direct Observation of Localized Radial Oxygen Migration in Functioning Tantalum Oxide Memristors. Advanced Materials (Deerfield Beach, Fla.). PMID 26833926 DOI: 10.1002/adma.201505435  0.44
2016 Kim KM, Yang JJ, Strachan JP, Grafals EM, Ge N, Melendez ND, Li Z, Williams RS. Voltage divider effect for the improvement of variability and endurance of TaOx memristor. Scientific Reports. 6: 20085. PMID 26830763 DOI: 10.1038/srep20085  0.44
2016 Kumar S, Strachan JP, Kilcoyne ALD, Tyliszczak T, Pickett MD, Santori C, Gibson G, Williams RS. The phase transition in VO2 probed using x-ray, visible and infrared radiations Applied Physics Letters. 108. DOI: 10.1063/1.4939746  0.44
2015 Choi BJ, Zhang J, Norris K, Gibson G, Kim KM, Jackson W, Zhang MM, Li Z, Yang JJ, Williams RS. Trilayer Tunnel Selectors for Memristor Memory Cells. Advanced Materials (Deerfield Beach, Fla.). PMID 26584142 DOI: 10.1002/adma.201503604  0.44
2015 Xu H, Zhang H, Yang W, Yadav R, Morrison AC, Qian M, Devidas M, Liu Y, Perez-Andreu V, Zhao X, Gastier-Foster JM, Lupo PJ, Neale G, Raetz E, Larsen E, ... ... Williams R, et al. Inherited coding variants at the CDKN2A locus influence susceptibility to acute lymphoblastic leukaemia in children. Nature Communications. 6: 7553. PMID 26104880 DOI: 10.1038/ncomms8553  0.56
2015 Kumar S, Graves CE, Strachan JP, Kilcoyne ALD, Tyliszczak T, Nishi Y, Williams RS. In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors Journal of Applied Physics. 118. DOI: 10.1063/1.4926477  0.72
2015 Barcelo SJ, Wu W, Li X, Li Z, Williams RS. Nanoimprint lithography of plasmonic platforms for SERS applications Applied Physics a: Materials Science and Processing. DOI: 10.1007/s00339-015-9073-8  0.72
2015 Xia Q, Wu W, Jung GY, Pi S, Lin P, Chen Y, Li X, Li Z, Wang SY, Williams RS. Nanoimprint lithography enables memristor crossbars and hybrid circuits Applied Physics a: Materials Science and Processing. DOI: 10.1007/s00339-015-9038-y  0.72
2014 Kumar S, Strachan JP, Pickett MD, Bratkovsky A, Nishi Y, Williams RS. Sequential electronic and structural transitions in VO2 observed using X-ray absorption spectromicroscopy. Advanced Materials (Deerfield Beach, Fla.). 26: 7505-9. PMID 25319233 DOI: 10.1002/adma.201402404  0.72
2014 Kim WG, Lee HM, Kim BY, Jung KH, Seong TG, Kim S, Jung HC, Kim HJ, Yoo JH, Lee HD, Kim SG, Chung S, Lee KJ, Lee JH, Kim HS, ... ... Williams RS, et al. NbO2-based low power and cost effective 1S1R switching for high density cross point ReRAM Application Digest of Technical Papers - Symposium On Vlsi Technology. DOI: 10.1109/VLSIT.2014.6894405  0.72
2014 Choi BJ, Ge N, Yang JJ, Zhang MX, Williams RS, Norris KJ, Kobayashi NP. New materials for memristive switching Proceedings - Ieee International Symposium On Circuits and Systems. 2808-2811. DOI: 10.1109/ISCAS.2014.6865757  0.72
2014 Ge N, Zhang MX, Zhang L, Yang JJ, Li Z, Williams RS. Electrode-material dependent switching in TaOxmemristors Semiconductor Science and Technology. 29. DOI: 10.1088/0268-1242/29/10/104003  0.72
2014 Goldfarb I, Williams RS. Conduction centers in a Ta2O5-δ Fermi glass Applied Physics a: Materials Science and Processing. 114: 287-289. DOI: 10.1007/s00339-013-8162-9  0.72
2014 Williams RS, Pickett MD. The art and science of constructing a memristor model Memristors and Memristive Systems. 2147483647: 93-104. DOI: 10.1007/978-1-4614-9068-5_3  0.72
2014 Williams RS. How we found the missing memristor Memristors and Memristive Systems. 2147483647: 3-16. DOI: 10.1007/978-1-4614-9068-5_1  0.72
2013 Strachan JP, Yang JJ, Montoro LA, Ospina CA, Ramirez AJ, Kilcoyne AL, Medeiros-Ribeiro G, Williams RS. Characterization of electroforming-free titanium dioxide memristors. Beilstein Journal of Nanotechnology. 4: 467-73. PMID 23946916 DOI: 10.3762/bjnano.4.55  0.72
2013 Kumar S, Pickett MD, Strachan JP, Gibson G, Nishi Y, Williams RS. Local temperature redistribution and structural transition during joule-heating-driven conductance switching in VO2. Advanced Materials (Deerfield Beach, Fla.). 25: 6128-32. PMID 23868142 DOI: 10.1002/adma.201302046  0.72
2013 Choi BJ, Torrezan AC, Norris KJ, Miao F, Strachan JP, Zhang MX, Ohlberg DA, Kobayashi NP, Yang JJ, Williams RS. Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch. Nano Letters. 13: 3213-7. PMID 23746124 DOI: 10.1021/nl401283q  0.72
2013 Pickett MD, Medeiros-Ribeiro G, Williams RS. A scalable neuristor built with Mott memristors. Nature Materials. 12: 114-7. PMID 23241533 DOI: 10.1038/nmat3510  0.72
2013 Yang JJ, Choi BJ, Zhang MX, Torrezan AC, Strachan JP, Williams RS. Memristive devices for computing: Mechanisms, applications and challenges Hp Laboratories Technical Report. DOI: 10.1149/05809.0009ecst  0.72
2013 Yang JJ, Williams RS. Memristive devices in computing system: Promises and challenges Acm Journal On Emerging Technologies in Computing Systems. 9. DOI: 10.1145/2463585.2463587  0.72
2013 Williams RS, Pickett MD, Strachan JP. Physics-based memristor models Proceedings - Ieee International Symposium On Circuits and Systems. 217-220. DOI: 10.1109/ISCAS.2013.6571821  0.72
2013 Han JW, Choi BJ, Yang JJ, Moon DI, Choi YK, Williams RS, Meyyappan M. A replacement of high-k process for CMOS transistor by atomic layer deposition Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/8/082003  0.72
2013 Goldfarb I, Ohlberg DAA, Strachan JP, Pickett MD, Yang JJ, Medeiros-Ribeiro G, Williams RS. Band offsets in transition-metal oxide heterostructures Journal of Physics D: Applied Physics. 46. DOI: 10.1088/0022-3727/46/29/295303  0.72
2013 Huang Z, Li WD, Santori C, Acosta VM, Faraon A, Ishikawa T, Wu W, Winston D, Williams RS, Beausoleil RG. Diamond nitrogen-vacancy centers created by scanning focused helium ion beam and annealing Applied Physics Letters. 103. DOI: 10.1063/1.4819339  0.72
2013 Nickel JH, Strachan JP, Pickett MD, Schamp CT, Yang JJ, Graham JA, Williams RS. Memristor structures for high scalability: Non-linear and symmetric devices utilizing fabrication friendly materials and processes Microelectronic Engineering. 103: 66-69. DOI: 10.1016/j.mee.2012.09.007  0.72
2013 Huang Z, Li Wd, Santori C, Acosta VM, Faraon A, Williams RS, Beausoleil RG. Diamond nitrogen-vacancy center creation with helium- ion microscope Cleo: Qels_fundamental Science, Cleo:Qels Fs 2013. JTh2A.78.  0.72
2013 Huang Z, Li WD, Santori C, Acosta VM, Faraon A, Williams RS, Beausolei RG. Diamond nitrogen-vacancy center creation with helium-ion microscope Cleo: Science and Innovations, Cleo_si 2013. JTh2A.78.  0.72
2013 Huang Z, Li WD, Santori C, Acosta VM, Faraon A, Williams RS, Beausoleil RG. Nitrogen-vacancy center creation with helium-ion microscope 2013 Conference On Lasers and Electro-Optics, Cleo 2013 0.72
2012 Kim A, Barcelo SJ, Williams RS, Li Z. Melamine sensing in milk products by using surface enhanced Raman scattering. Analytical Chemistry. 84: 9303-9. PMID 23043560 DOI: 10.1021/ac302025q  0.72
2012 Miao F, Yi W, Goldfarb I, Yang JJ, Zhang MX, Pickett MD, Strachan JP, Medeiros-Ribeiro G, Williams RS. Continuous electrical tuning of the chemical composition of TaO(x)-based memristors. Acs Nano. 6: 2312-8. PMID 22324891 DOI: 10.1021/nn2044577  0.72
2012 Lim MA, Kim DH, Park CO, Lee YW, Han SW, Li Z, Williams RS, Park I. A new route toward ultrasensitive, flexible chemical sensors: metal nanotubes by wet-chemical synthesis along sacrificial nanowire templates. Acs Nano. 6: 598-608. PMID 22148522 DOI: 10.1021/nn204009m  0.72
2012 Lee HD, Kim SG, Cho K, Hwang H, Choi H, Lee J, Lee SH, Lee HJ, Suh J, Chung SO, Kim YS, Kim KS, Nam WS, Cheong JT, Kim JT, ... ... Williams RS, et al. Integration of 4F2 selector-less crossbar array 2Mb ReRAM based on transition metal oxides for high density memory applications Digest of Technical Papers - Symposium On Vlsi Technology. 151-152. DOI: 10.1109/VLSIT.2012.6242506  0.72
2012 Roozeboom CL, Sim JY, Wickeraad D, Dura B, Smith WS, Hopcroft MA, Hartwell PG, Williams RS, Pruitt BL. Multi-functional integrated sensors for the environment Proceedings of the Ieee International Conference On Micro Electro Mechanical Systems (Mems). 144-147. DOI: 10.1109/MEMSYS.2012.6170114  0.72
2012 Ribeiro GM, Yang JJ, Nickel J, Torrezan A, Strachan JP, Williams RS. Designing memristors: Physics, materials science and engineering Iscas 2012 - 2012 Ieee International Symposium On Circuits and Systems. 2513-2516. DOI: 10.1109/ISCAS.2012.6271813  0.72
2012 Yang JJ, Zhang MX, Miao F, Strachan JP, Torrezan AC, Pickett MD, Yi W, Choi BJ, Nickel JH, Medeiros-Ribeiro G, Williams RS. Oxide based memristive devices Icsict 2012 - 2012 Ieee 11th International Conference On Solid-State and Integrated Circuit Technology, Proceedings. DOI: 10.1109/ICSICT.2012.6467661  0.72
2012 Qureshi MS, Yi W, Medeiros-Ribeiro G, Williams RS. AC sense technique for memristor crossbar Electronics Letters. 48: 757-758. DOI: 10.1049/el.2012.1017  0.72
2012 Leite MS, Kamins TI, Williams RS, Medeiros-Ribeiro G. Intermixing during ripening in Ge-Si incoherent epitaxial nanocrystals Journal of Physical Chemistry C. 116: 901-907. DOI: 10.1021/jp2092016  0.72
2012 Choi BJ, Yang JJ, Zhang MX, Norris KJ, Ohlberg DAA, Kobayashi NP, Medeiros-Ribeiro G, Williams RS. Nitride memristors Applied Physics a: Materials Science and Processing. 109: 1-4. DOI: 10.1007/s00339-012-7052-x  0.72
2012 Goldfarb I, Miao F, Yang JJ, Yi W, Strachan JP, Zhang MX, Pickett MD, Medeiros-Ribeiro G, Williams RS. Electronic structure and transport measurements of amorphous transition-metal oxides: Observation of Fermi glass behavior Applied Physics a: Materials Science and Processing. 107: 1-11. DOI: 10.1007/s00339-012-6856-z  0.72
2012 Wu W, Walmsley RG, Li WD, Li X, Williams RS. Nanoimprint lithography with ≤60 nm overlay precision Applied Physics a: Materials Science and Processing. 106: 767-772. DOI: 10.1007/s00339-012-6775-z  0.72
2012 Kelly T, Kuno H, Pickett MD, Boehm H, Davis A, Golab W, Graefe G, Harizopoulos S, Joisha P, Karp A, Muralimanohar N, Perner F, Medeiros-Ribeiro G, Seroussi G, Simitsis A, ... ... Williams RS, et al. Sidestep: Co-designed shiftable memory & software Hp Laboratories Technical Report 0.72
2011 Strachan JP, Torrezan AC, Medeiros-Ribeiro G, Williams RS. Measuring the switching dynamics and energy efficiency of tantalum oxide memristors. Nanotechnology. 22: 505402. PMID 22108243 DOI: 10.1088/0957-4484/22/50/505402  0.72
2011 Torrezan AC, Strachan JP, Medeiros-Ribeiro G, Williams RS. Sub-nanosecond switching of a tantalum oxide memristor. Nanotechnology. 22: 485203. PMID 22071289 DOI: 10.1088/0957-4484/22/48/485203  0.72
2011 Miao F, Strachan JP, Yang JJ, Zhang MX, Goldfarb I, Torrezan AC, Eschbach P, Kelley RD, Medeiros-Ribeiro G, Williams RS. Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor. Advanced Materials (Deerfield Beach, Fla.). 23: 5633-40. PMID 22065427 DOI: 10.1002/adma.201103379  0.72
2011 Jin CY, Li Z, Williams RS, Lee KC, Park I. Localized temperature and chemical reaction control in nanoscale space by nanowire array. Nano Letters. 11: 4818-25. PMID 21967343 DOI: 10.1021/nl2026585  0.72
2011 Ou FS, Hu M, Naumov I, Kim A, Wu W, Bratkovsky AM, Li X, Williams RS, Li Z. Hot-spot engineering in polygonal nanofinger assemblies for surface enhanced Raman spectroscopy. Nano Letters. 11: 2538-42. PMID 21604751 DOI: 10.1021/nl201212n  0.72
2011 Xia Q, Pickett MD, Yang JJ, Zhang MX, Borghetti J, Li X, Wu W, Medeiros-Ribeiro G, Williams RS. Impact of geometry on the performance of memristive nanodevices. Nanotechnology. 22: 254026. PMID 21572201 DOI: 10.1088/0957-4484/22/25/254026  0.36
2011 Savel'ev SE, Alexandrov AS, Bratkovsky AM, Williams RS. Molecular dynamics simulations of oxide memory resistors (memristors). Nanotechnology. 22: 254011. PMID 21572187 DOI: 10.1088/0957-4484/22/25/254011  0.4
2011 Strachan JP, Strukov DB, Borghetti J, Yang JJ, Medeiros-Ribeiro G, Williams RS. The switching location of a bipolar memristor: chemical, thermal and structural mapping. Nanotechnology. 22: 254015. PMID 21572186 DOI: 10.1088/0957-4484/22/25/254015  0.36
2011 Kim A, Ou FS, Ohlberg DA, Hu M, Williams RS, Li Z. Study of molecular trapping inside gold nanofinger arrays on surface-enhanced Raman substrates. Journal of the American Chemical Society. 133: 8234-9. PMID 21520938 DOI: 10.1021/ja200247x  0.72
2011 Pickett MD, Borghetti J, Yang JJ, Medeiros-Ribeiro G, Williams RS. Coexistence of memristance and negative differential resistance in a nanoscale metal-oxide-metal system. Advanced Materials (Deerfield Beach, Fla.). 23: 1730-3. PMID 21491505 DOI: 10.1002/adma.201004497  0.72
2011 Medeiros-Ribeiro G, Perner F, Carter R, Abdalla H, Pickett MD, Williams RS. Lognormal switching times for titanium dioxide bipolar memristors: origin and resolution. Nanotechnology. 22: 095702. PMID 21258143 DOI: 10.1088/0957-4484/22/9/095702  0.72
2011 Strachan JP, Medeiros-Ribeiro G, Yang JJ, Zhang MX, Miao F, Goldfarb I, Holt M, Rose V, Williams RS. Spectromicroscopy of tantalum oxide memristors Applied Physics Letters. 98. DOI: 10.1063/1.3599589  0.72
2011 Yang JJ, Kobayashi NP, Strachan JP, Zhang MX, Ohlberg DAA, Pickett MD, Li Z, Medeiros-Ribeiro G, Williams RS. Dopant control by atomic layer deposition in oxide films for memristive switches Chemistry of Materials. 23: 123-125. DOI: 10.1021/cm1020959  0.72
2011 Hu M, Fattal D, Li J, Li X, Li Z, Williams RS. Optical properties of sub-wavelength dielectric gratings and their application for surface-enhanced Raman scattering Applied Physics a: Materials Science and Processing. 105: 261-266. DOI: 10.1007/s00339-011-6613-8  0.72
2011 Strukov DB, Williams RS. An ionic bottle for high-speed, long-retention memristive devices Applied Physics a: Materials Science and Processing. 102: 1033-1036. DOI: 10.1007/s00339-011-6321-4  0.72
2011 Miao F, Ohlberg DAA, Williams RS, Lau CN. Characterization of quantum conducting channels in metal/molecule/metal devices using pressure-modulated conductance microscopy Applied Physics a: Materials Science and Processing. 102: 943-948. DOI: 10.1007/s00339-011-6298-z  0.72
2011 Savel'ev SE, Alexandrov AS, Bratkovsky AM, Williams RS. Molecular dynamics simulations of oxide memristors: Thermal effects Applied Physics a: Materials Science and Processing. 102: 891-895. DOI: 10.1007/s00339-011-6293-4  0.72
2011 Yi W, Perner F, Qureshi MS, Abdalla H, Pickett MD, Yang JJ, Zhang MXM, Medeiros-Ribeiro G, Williams RS. Feedback write scheme for memristive switching devices Applied Physics a: Materials Science and Processing. 102: 973-982. DOI: 10.1007/s00339-011-6279-2  0.72
2011 Strukov DB, Williams RS. Intrinsic constrains on thermally-assisted memristive switching Applied Physics a: Materials Science and Processing. 102: 851-855. DOI: 10.1007/s00339-011-6269-4  0.72
2011 Yang JJ, Strachan JP, Miao F, Zhang MX, Pickett MD, Yi W, Ohlberg DAA, Medeiros-Ribeiro G, Williams RS. Metal/TiO2 interfaces for memristive switches Applied Physics a: Materials Science and Processing. 102: 785-789. DOI: 10.1007/s00339-011-6265-8  0.72
2011 Xia Q, Pickett MD, Yang JJ, Li X, Wu W, Medeiros-Ribeiro G, Williams RS. Two- and three-terminal resistive switches: Nanometer-scale memristors and memistors Advanced Functional Materials. 21: 2660-2665. DOI: 10.1002/adfm.201100180  0.72
2011 Kim A, Ou FS, Ohlberg DAA, Hu M, Williams RS, Li Z. Study of molecular trapping by gold nanofinger arrays on surface-enhanced raman substrates Hp Laboratories Technical Report 0.72
2010 Hu M, Ou FS, Wu W, Naumov I, Li X, Bratkovsky AM, Williams RS, Li Z. Gold nanofingers for molecule trapping and detection. Journal of the American Chemical Society. 132: 12820-2. PMID 20795668 DOI: 10.1021/ja105248h  0.72
2010 Yang JJ, Strachan JP, Xia Q, Ohlberg DA, Kuekes PJ, Kelley RD, Stickle WF, Stewart DR, Medeiros-Ribeiro G, Williams RS. Diffusion of adhesion layer metals controls nanoscale memristive switching. Advanced Materials (Deerfield Beach, Fla.). 22: 4034-8. PMID 20677188 DOI: 10.1002/adma.201000663  0.36
2010 Xia Q, Yang JJ, Wu W, Li X, Williams RS. Self-aligned memristor cross-point arrays fabricated with one nanoimprint lithography step. Nano Letters. 10: 2909-14. PMID 20590084 DOI: 10.1021/nl1017157  0.72
2010 Strachan JP, Pickett MD, Yang JJ, Aloni S, David Kilcoyne AL, Medeiros-Ribeiro G, Stanley Williams R. Direct identification of the conducting channels in a functioning memristive device. Advanced Materials (Deerfield Beach, Fla.). 22: 3573-7. PMID 20512814 DOI: 10.1002/adma.201000186  0.72
2010 Wu W, Hu M, Ou FS, Li Z, Williams RS. Cones fabricated by 3D nanoimprint lithography for highly sensitive surface enhanced Raman spectroscopy. Nanotechnology. 21: 255502. PMID 20508315 DOI: 10.1088/0957-4484/21/25/255502  0.72
2010 Robinett W, Pickett M, Borghetti J, Xia Q, Snider GS, Medeiros-Ribeiro G, Williams RS. A memristor-based nonvolatile latch circuit. Nanotechnology. 21: 235203. PMID 20472941 DOI: 10.1088/0957-4484/21/23/235203  0.72
2010 Lai Q, Zhang L, Li Z, Stickle WF, Williams RS, Chen Y. Ionic/electronic hybrid materials integrated in a synaptic transistor with signal processing and learning functions. Advanced Materials (Deerfield Beach, Fla.). 22: 2448-53. PMID 20446309 DOI: 10.1002/adma.201000282  0.72
2010 Borghetti J, Snider GS, Kuekes PJ, Yang JJ, Stewart DR, Williams RS. 'Memristive' switches enable 'stateful' logic operations via material implication. Nature. 464: 873-6. PMID 20376145 DOI: 10.1038/nature08940  0.72
2010 Park I, Li Z, Pisano AP, Williams RS. Top-down fabricated silicon nanowire sensors for real-time chemical detection. Nanotechnology. 21: 015501. PMID 19946164 DOI: 10.1088/0957-4484/21/1/015501  0.72
2010 Williams R. Reply to - "On the discovery of a polarity-dependent memory switch and/or memristor (memory resistor)" Iete Technical Review (Institution of Electronics and Telecommunication Engineers, India). 27: 181-182. DOI: 10.4103/0256-4602.60171  0.72
2010 Wu W, Hu M, Ou FS, Williams RS, Li Z. Rational engineering of highly sensitive SERS substrate based on nanocone structures Proceedings of Spie - the International Society For Optical Engineering. 7673. DOI: 10.1117/12.849959  0.72
2010 Tong WM, Yang JJ, Kuekes PJ, Stewart DR, Williams RS, DeIonno E, King EE, Witczak SC, Looper MD, Osborn JV. Radiation hardness of TiO2 memristive junctions Ieee Transactions On Nuclear Science. 57: 1640-1643. DOI: 10.1109/TNS.2010.2045768  0.72
2010 Strukov DB, Stewart DR, Borghetti J, Li X, Pickett M, Medeiros Ribeiro G, Robinett W, Snider G, Strachan JP, Wu W, Xia Q, Yang JJ, Williams RS. Hybrid CMOS/memristor circuits Iscas 2010 - 2010 Ieee International Symposium On Circuits and Systems: Nano-Bio Circuit Fabrics and Systems. 1967-1970. DOI: 10.1109/ISCAS.2010.5537020  0.72
2010 Islam MS, Johns C, Do L, Ohlberg DAA, Wang SY, Williams RS. Memristors based on an organic monolayer of molecules and a thin film of solid electrolytes Icece 2010 - 6th International Conference On Electrical and Computer Engineering. 761-764. DOI: 10.1109/ICELCE.2010.5700804  0.72
2010 Yang JJ, Zhang MX, Strachan JP, Miao F, Pickett MD, Kelley RD, Medeiros-Ribeiro G, Williams RS. High switching endurance in TaOx memristive devices Applied Physics Letters. 97. DOI: 10.1063/1.3524521  0.72
2010 Maitani MM, Allara DL, Ohlberg DAA, Li Z, Williams RS, Stewart DR. High integrity metal/organic device interfaces via low temperature buffer layer assisted metal atom nucleation Applied Physics Letters. 96. DOI: 10.1063/1.3377044  0.72
2010 Chaturvedi P, Wu W, Logeeswaran VJ, Yu Z, Islam MS, Wang SY, Williams RS, Fang NX. A smooth optical superlens Applied Physics Letters. 96. DOI: 10.1063/1.3293448  0.72
2009 Strukov DB, Williams RS. Four-dimensional address topology for circuits with stacked multilayer crossbar arrays. Proceedings of the National Academy of Sciences of the United States of America. 106: 20155-8. PMID 19918072 DOI: 10.1073/pnas.0906949106  0.72
2009 Xia Q, Robinett W, Cumbie MW, Banerjee N, Cardinali TJ, Yang JJ, Wu W, Li X, Tong WM, Strukov DB, Snider GS, Medeiros-Ribeiro G, Williams RS. Memristor-CMOS hybrid integrated circuits for reconfigurable logic. Nano Letters. 9: 3640-5. PMID 19722537 DOI: 10.1021/nl901874j  0.72
2009 Jiang D, Li X, Williams R, Patel S, Men L, Wang Y, Zhou F. Ternary complexes of iron, amyloid-beta, and nitrilotriacetic acid: binding affinities, redox properties, and relevance to iron-induced oxidative stress in Alzheimer's disease. Biochemistry. 48: 7939-47. PMID 19601593 DOI: 10.1021/bi900907a  0.72
2009 Li J, Thylen L, Bratkovsky A, Wang SY, Williams RS. Optical magnetic plasma in artificial flowers. Optics Express. 17: 10800-5. PMID 19550479 DOI: 10.1364/OE.17.010800  0.72
2009 Tang J, Li Z, Xia Q, Williams RS. Fractal structure formation from Ag nanoparticle films on insulating substrates. Langmuir : the Acs Journal of Surfaces and Colloids. 25: 7222-5. PMID 19496573 DOI: 10.1021/la9010532  0.72
2009 Joshua Yang J, Miao F, Pickett MD, Ohlberg DA, Stewart DR, Lau CN, Williams RS. The mechanism of electroforming of metal oxide memristive switches. Nanotechnology. 20: 215201. PMID 19423925 DOI: 10.1088/0957-4484/20/21/215201  0.72
2009 Li Z, Gu Y, Wang L, Ge H, Wu W, Xia Q, Yuan C, Chen Y, Cui B, Williams RS. Hybrid nanoimprint-soft lithography with sub-15 nm resolution. Nano Letters. 9: 2306-10. PMID 19422192 DOI: 10.1021/nl9004892  0.72
2009 Roth RM, Robinett W, Kuekes PJ, Williams RS. Defect-tolerant demultiplexer circuits based on threshold logic and coding. Nanotechnology. 20: 135201. PMID 19420487 DOI: 10.1088/0957-4484/20/13/135201  0.72
2009 Maitani MM, Ohlberg DA, Li Z, Allara DL, Stewart DR, Williams RS. Study of SERS chemical enhancement factors using buffer layer assisted growth of metal nanoparticles on self-assembled monolayers. Journal of the American Chemical Society. 131: 6310-1. PMID 19371083 DOI: 10.1021/ja809347y  0.72
2009 Borghetti J, Li Z, Straznicky J, Li X, Ohlberg DA, Wu W, Stewart DR, Williams RS. A hybrid nanomemristor/transistor logic circuit capable of self-programming. Proceedings of the National Academy of Sciences of the United States of America. 106: 1699-703. PMID 19171903 DOI: 10.1073/pnas.0806642106  0.64
2009 Logeeswaran Vj, Kobayashi NP, Islam MS, Wu W, Chaturvedi P, Fang NX, Wang SY, Williams RS. Ultrasmooth silver thin films deposited with a germanium nucleation layer. Nano Letters. 9: 178-82. PMID 19105737 DOI: 10.1021/nl8027476  0.72
2009 Hu M, Tang J, Ou FS, Kuo HP, Wang SY, Li Z, Williams RS. Metal coated si nanograss as highly sensitive SERS sensors Proceedings of Spie - the International Society For Optical Engineering. 7312. DOI: 10.1117/12.818992  0.72
2009 Xia Q, Tong WM, Wu W, Yang JJ, Li X, Robinett W, Cardinali T, Cumbie M, Ellenson JE, Kuekes P, Williams RS. On the integration of memristors with CMOS using nanoimprint lithography Proceedings of Spie - the International Society For Optical Engineering. 7271. DOI: 10.1117/12.814327  0.72
2009 Morecroft D, Yang JKW, Schuster S, Berggren KK, Xia Q, Wu W, Williams RS. Sub- 15 nm nanoimprint molds and pattern transfer Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2837-2840. DOI: 10.1116/1.3264670  0.72
2009 Yang JJ, Xiang H, Ji C, Stickle WF, Stewart DR, Ohlberg DAA, Williams RS, Chang YA. Origin of inverse tunneling magnetoresistance in a symmetric junction revealed by delaminating the buried electronic interface Applied Physics Letters. 95. DOI: 10.1063/1.3272684  0.72
2009 Lai Q, Zhang L, Li Z, Stickle WF, Williams RS, Chen Y. Analog memory capacitor based on field-configurable ion-doped polymers Applied Physics Letters. 95. DOI: 10.1063/1.3268433  0.72
2009 Borghetti J, Strukov DB, Pickett MD, Yang JJ, Stewart DR, Williams RS. Electrical transport and thermometry of electroformed titanium dioxide memristive switches Journal of Applied Physics. 106. DOI: 10.1063/1.3264621  0.72
2009 Pickett MD, Strukov DB, Borghetti JL, Yang JJ, Snider GS, Stewart DR, Williams RS. Switching dynamics in titanium dioxide memristive devices Journal of Applied Physics. 106. DOI: 10.1063/1.3236506  0.72
2009 Miao F, Yang JJ, Strachan JP, Stewart D, Williams RS, Lau CN. Force modulation of tunnel gaps in metal oxide memristive nanoswitches Applied Physics Letters. 95. DOI: 10.1063/1.3227651  0.72
2009 Strukov DB, Snider GS, Stewart DR, Williams RS. The missing memristor found (Nature (2008) 453 (80-83)) Nature. 459: 1154. DOI: 10.1038/nature08166  0.72
2009 Causey RA, Doerner R, Fraser H, Kolasinski RD, Smugeresky J, Umstadter K, Williams R. Defects in tungsten responsible for molecular hydrogen isotope retention after exposure to low energy plasmas Journal of Nuclear Materials. 390: 717-720. DOI: 10.1016/j.jnucmat.2009.01.300  0.72
2009 Tang J, Ou FS, Kuo HP, Hu M, Stickle WF, Li Z, Williams RS. Silver-coated Si nanograss as highly sensitive surface-enhanced Raman spectroscopy substrates Applied Physics a: Materials Science and Processing. 96: 793-797. DOI: 10.1007/s00339-009-5305-0  0.72
2009 Wu W, Ponizovskaya E, Kim E, Cho D, Bratkovsky A, Yu Z, Xia Q, Li X, Shen YR, Wang SY, Williams RS. Geometrical dependence of optical negative index meta-materials at 1.55 μm Applied Physics a: Materials Science and Processing. 95: 1119-1122. DOI: 10.1007/s00339-009-5139-9  0.72
2009 Kobayashi NP, Mathai S, Li X, Logeeswaran VJ, Islam MS, Lohn A, Onishi T, Straznicky J, Wang SY, Williams RS. Ensembles of indium phosphide nanowires: Physical properties and functional devices integrated on non-single crystal platforms Applied Physics a: Materials Science and Processing. 95: 1005-1013. DOI: 10.1007/s00339-009-5110-9  0.72
2009 Yang JJ, Borghetti J, Murphy D, Stewart DR, Williams RS. A family of electronically reconfigurable nanodevices Advanced Materials. 21: 3754-3758+3721. DOI: 10.1002/adma.200900822  0.72
2008 Tang J, Ponizovskaya EV, Bratkovsky AM, Stewart DR, Li Z, Williams RS. Metallic nanocrystals near ultrasmooth metallic films for surface-enhanced Raman scattering application. Nanotechnology. 19: 415702. PMID 21832653 DOI: 10.1088/0957-4484/19/41/415702  0.64
2008 Li Z, Pickett MD, Stewart D, Ohlberg DA, Li X, Wu W, Robinett W, Williams RS. Experimental demonstration of a defect-tolerant nanocrossbar demultiplexer. Nanotechnology. 19: 165203. PMID 21825637 DOI: 10.1088/0957-4484/19/16/165203  0.72
2008 Wu W, Tong WM, Bartman J, Chen Y, Walmsley R, Yu Z, Xia Q, Park I, Picciotto C, Gao J, Wang SY, Morecroft D, Yang J, Berggren KK, Williams RS. Sub-10 nm nanoimprint lithography by wafer bowing. Nano Letters. 8: 3865-9. PMID 18837563 DOI: 10.1021/nl802295n  0.72
2008 Miao F, Ohlberg D, Stewart DR, Williams RS, Lau CN. Quantum conductance oscillations in metal/molecule/metal switches at room temperature. Physical Review Letters. 101: 016802. PMID 18764137 DOI: 10.1103/PhysRevLett.101.016802  0.72
2008 Yang JJ, Pickett MD, Li X, Ohlberg DA, Stewart DR, Williams RS. Memristive switching mechanism for metal/oxide/metal nanodevices. Nature Nanotechnology. 3: 429-33. PMID 18654568 DOI: 10.1038/nnano.2008.160  0.72
2008 Leite MS, Malachias A, Kycia SW, Kamins TI, Williams RS, Medeiros-Ribeiro G. Evolution of thermodynamic potentials in closed and open nanocrystalline systems: Ge-Si:Si(001) islands. Physical Review Letters. 100: 226101. PMID 18643432 DOI: 10.1103/PhysRevLett.100.226101  0.4
2008 Strukov DB, Snider GS, Stewart DR, Williams RS. The missing memristor found. Nature. 453: 80-3. PMID 18451858 DOI: 10.1038/nature06932  0.72
2008 Blackstock JJ, Donley CL, Stickle WF, Ohlberg DA, Yang JJ, Stewart DR, Williams RS. Oxide and carbide formation at titanium/organic monolayer interfaces. Journal of the American Chemical Society. 130: 4041-7. PMID 18318537 DOI: 10.1021/ja710448e  0.72
2008 Lai Q, Li Z, Zhang L, Li X, Stickle WF, Zhu Z, Gu Z, Kamins TI, Williams RS, Chen Y. An organic/Si nanowire hybrid field configurable transistor. Nano Letters. 8: 876-80. PMID 18266332 DOI: 10.1021/nl073112y  0.6
2007 Park I, Li Z, Pisano AP, Williams RS. Selective surface functionalization of silicon nanowires via nanoscale joule heating. Nano Letters. 7: 3106-11. PMID 17894518 DOI: 10.1021/nl071637k  0.72
2007 Donley CL, Blackstock JJ, Stickle WF, Stewart DR, Williams RS. In-situ infrared spectroscopy of buried organic monolayers: influence of the substrate on titanium reactivity with a Langmuir-Blodgett film. Langmuir : the Acs Journal of Surfaces and Colloids. 23: 7620-5. PMID 17559236 DOI: 10.1021/la062960q  0.72
2007 Leite MS, Medeiros-Ribeiro G, Kamins TI, Williams RS. Alloying mechanisms for epitaxial nanocrystals. Physical Review Letters. 98: 165901. PMID 17501431 DOI: 10.1103/PhysRevLett.98.165901  0.4
2007 Li Z, Tong WM, Stickle WF, Neiman DL, Williams RS, Hunter LL, Talin AA, Li D, Brueck SR. Plasma-induced formation of Ag nanodots for ultra-high-enhancement surface-enhanced Raman scattering substrates. Langmuir : the Acs Journal of Surfaces and Colloids. 23: 5135-8. PMID 17385901 DOI: 10.1021/la063688n  0.72
2007 Medeiros-Ribeiro G, Williams RS. Thermodynamics of coherently-strained GexSi1-x nanocrystals on Si(001): alloy composition and island formation. Nano Letters. 7: 223-6. PMID 17253759 DOI: 10.1021/nl062530k  0.4
2007 Park I, Li Z, Li X, Pisano AP, Williams RS. Towards the silicon nanowire-based sensor for intracellular biochemical detection. Biosensors & Bioelectronics. 22: 2065-70. PMID 17056246 DOI: 10.1016/j.bios.2006.09.017  0.72
2006 You JP, Choi JH, Kim S, Li X, Williams RS, Ragan R. Regular arrays of monodisperse platinum/erbium disilicide core-shell nanowires and nanoparticles on Si(001) via a self-assembled template. Nano Letters. 6: 1858-62. PMID 16967991 DOI: 10.1021/nl060640l  0.72
2006 Lee S, Park J, Ragan R, Kim S, Lee Z, Lim do K, Ohlberg DA, Williams RS. Self-assembled monolayers on Pt(111): molecular packing structure and strain effects observed by scanning tunneling microscopy. Journal of the American Chemical Society. 128: 5745-50. PMID 16637642 DOI: 10.1021/ja058037c  0.72
2006 Jung GY, Johnston-Halperin E, Wu W, Yu Z, Wang SY, Tong WM, Li Z, Green JE, Sheriff BA, Boukai A, Bunimovich Y, Heath JR, Williams RS. Circuit fabrication at 17 nm half-pitch by nanoimprint lithography. Nano Letters. 6: 351-4. PMID 16522021 DOI: 10.1021/nl052110f  0.72
2005 Kuekes PJ, Snider GS, Williams RS. Crossbar nanocomputers. Scientific American. 293: 72-8, 80. PMID 16318029  0.72
2005 Jung GY, Li Z, Wu W, Ganapathiappan S, Li X, Olynick DL, Wang SY, Tong WM, Williams RS. Improved pattern transfer in nanoimprint lithography at 30 nm half-pitch by substrate-surface functionalization. Langmuir : the Acs Journal of Surfaces and Colloids. 21: 6127-30. PMID 15982008 DOI: 10.1021/la050021c  0.6
2005 Ge H, Wu W, Li Z, Jung GY, Olynick D, Chen Y, Liddle JA, Wang SY, Williams RS. Cross-linked polymer replica of a nanoimprint mold at 30 nm half-pitch. Nano Letters. 5: 179-82. PMID 15792435 DOI: 10.1021/nl048618k  0.52
2005 Jung GY, Li Z, Wu W, Chen Y, Olynick DL, Wang SY, Tong WM, Williams RS. Vapor-phase self-assembled monolayer for improved mold release in nanoimprint lithography. Langmuir : the Acs Journal of Surfaces and Colloids. 21: 1158-61. PMID 15697253 DOI: 10.1021/la0476938  0.52
2004 Heath JR, Stoddart JF, Williams RS. More on molecular electronics. Science (New York, N.Y.). 303: 1136-7; author reply. PMID 14976295 DOI: 10.1126/science.303.5661.1136c  0.72
2003 Zhou X, Wang X, Dougherty ER. Missing-value estimation using linear and non-linear regression with Bayesian gene selection. Bioinformatics (Oxford, England). 19: 2302-7. PMID 14630659  0.48
2003 Malachias A, Kycia S, Medeiros-Ribeiro G, Magalhães-Paniago R, Kamins TI, Williams RS. 3D composition of epitaxial nanocrystals by anomalous X-ray diffraction: observation of a Si-rich core in Ge domes on Si(100). Physical Review Letters. 91: 176101. PMID 14611360 DOI: 10.1103/PhysRevLett.91.176101  0.4
2003 Rudd RE, Briggs GA, Sutton AP, Medeiros-Ribeiro G, Williams RS. Equilibrium model of bimodal distributions of epitaxial island growth. Physical Review Letters. 90: 146101. PMID 12731931 DOI: 10.1103/PhysRevLett.90.146101  0.4
1987 Kim S, Hsu LS, Williams RS. Semiempirical band structure of PtGa2. Physical Review. B, Condensed Matter. 36: 3099-3103. PMID 9943219  0.96
1987 Kim S, Williams RS. Semiempirical band structure and partial density of states of CuCl. Physical Review. B, Condensed Matter. 35: 2823-2826. PMID 9941760  0.96
1986 Yarmoff JA, Cyr DM, Huang JH, Kim S, Williams RS. Impact-collision ion-scattering spectroscopy of Cu(110) and Cu(110)-(2 x 1)-O using 5-keV 6Li+ Physical Review. B, Condensed Matter. 33: 3856-3868. PMID 9938801  0.96
1985 Nelson JG, Gignac WJ, Kim S, Lince JR, Williams RS. Angle-resolved photoemission study of AuGa2 and AuIn2 intermetallic compounds. Physical Review. B, Condensed Matter. 31: 3469-3476. PMID 9936237 DOI: 10.1103/PhysRevB.31.3469  0.72
1985 Kim S, Nelson JG, Williams RS. Mixed-basis band-structure interpolation scheme applied to the fluorite-structure compounds NiSi2, AuAl2, AuGa2, and AuIn2. Physical Review. B, Condensed Matter. 31: 3460-3468. PMID 9936236 DOI: 10.1103/PhysRevB.31.3460  0.72
1985 Davis RF, Williams RS, Kevan SD, Wehner PS, Shirley DA. Angle-resolved photoemission studies of the valence-band structure of stepped crystal surfaces: Cu(S)- Physical Review. B, Condensed Matter. 31: 1997-2004. PMID 9936004  0.4
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