R. Stanley Williams - Publications

Affiliations: 
1980 Bell Laboratories, Murray Hill, NJ, United States 
 1980-1995 Chemistry University of California, Los Angeles, Los Angeles, CA 
 1995-2018 Hewlett-Packard 
 2018- Electrical and Computer Engineering Texas A & M University, College Station, TX, United States 
Area:
nanotechnology, computing, cognition
Website:
https://cesg.tamu.edu/people-2/faculty/r-stanley-williams/

179 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Goswami S, Deb D, Tempez A, Chaigneau M, Rath SP, Lal M, Ariando, Williams RS, Goswami S, Venkatesan T. Nanometer-Scale Uniform Conductance Switching in Molecular Memristors. Advanced Materials (Deerfield Beach, Fla.). e2004370. PMID 32893411 DOI: 10.1002/Adma.202004370  0.309
2020 Goswami S, Rath SP, Thompson D, Hedström S, Annamalai M, Pramanick R, Ilic BR, Sarkar S, Hooda S, Nijhuis CA, Martin J, Williams RS, Goswami S, Venkatesan T. Charge disproportionate molecular redox for discrete memristive and memcapacitive switching. Nature Nanotechnology. PMID 32203436 DOI: 10.1038/S41565-020-0653-1  0.329
2020 Goswami S, Thompson D, Williams RS, Goswami S, Venkatesan T. Colossal current and voltage tunability in an organic memristor via electrode engineering Applied Materials Today. 19: 100626. DOI: 10.1016/J.Apmt.2020.100626  0.313
2019 Bohaichuk SM, Kumar S, Pitner G, McClellan CJ, Jeong J, Samant MG, Wong HP, Parkin SSP, Williams RS, Pop E. Fast Spiking of a Mott VO2-Carbon Nanotube Composite Device. Nano Letters. PMID 31433663 DOI: 10.1021/Acs.Nanolett.9B01554  0.315
2019 Medeiros-Ribeiro G, Bratkovski AM, Kamins TI, Ohlberg DAA, Williams RS. Shape transition of germanium nanocrystals on a silicon (001) surface from pyramids to domes Science (New York, N.Y.). 279: 353-5. PMID 9430580 DOI: 10.1126/Science.279.5349.353  0.336
2018 Kumar S, Williams RS. Separation of current density and electric field domains caused by nonlinear electronic instabilities. Nature Communications. 9: 2030. PMID 29795115 DOI: 10.1038/S41467-018-04452-W  0.315
2017 Kumar S, Wang Z, Davila N, Kumari N, Norris KJ, Huang X, Strachan JP, Vine D, Kilcoyne ALD, Nishi Y, Williams RS. Physical origins of current and temperature controlled negative differential resistances in NbO2. Nature Communications. 8: 658. PMID 28939848 DOI: 10.1038/S41467-017-00773-4  0.302
2017 La Torre C, Kindsmüller A, Wouters DJ, Graves CE, Gibson GA, Strachan JP, Williams RS, Waser R, Menzel S. Volatile HRS asymmetry and subloops in resistive switching oxides. Nanoscale. PMID 28920125 DOI: 10.1039/C7Nr04896C  0.31
2017 Graves CE, Dávila N, Merced-Grafals EJ, Lam S, Strachan JP, Williams RS. Temperature and field-dependent transport measurements in continuously tunable tantalum oxide memristors expose the dominant state variable Applied Physics Letters. 110: 123501. DOI: 10.1063/1.4978757  0.308
2016 Kumar S, Wang Z, Huang X, Kumari N, Davila N, Strachan JP, Vine D, Kilcoyne AL, Nishi Y, Williams RS. Conduction Channel Formation and Dissolution Due to Oxygen Thermophoresis/Diffusion in Hafnium Oxide Memristors. Acs Nano. PMID 27957851 DOI: 10.1021/Acsnano.6B06275  0.332
2016 Zhang J, Norris KJ, Gibson G, Zhao D, Samuels K, Zhang MM, Yang JJ, Park J, Sinclair R, Jeon Y, Li Z, Williams RS. Thermally induced crystallization in NbO2 thin films. Scientific Reports. 6: 34294. PMID 27682633 DOI: 10.1038/Srep34294  0.395
2016 Diaz Leon JJ, Fryauf DM, Cormia RD, Zhang MM, Samuels K, Williams RS, Kobayashi NP. Reflectometry-ellipsometry reveals thickness, growth rate and phase composition in oxidation of copper. Acs Applied Materials & Interfaces. PMID 27505052 DOI: 10.1021/Acsami.6B06626  0.329
2016 Yi W, Savel'ev SE, Medeiros-Ribeiro G, Miao F, Zhang MX, Yang JJ, Bratkovsky AM, Williams RS. Quantized conductance coincides with state instability and excess noise in tantalum oxide memristors. Nature Communications. 7: 11142. PMID 27041485 DOI: 10.1038/Ncomms11142  0.524
2016 Choi BJ, Torrezan AC, Strachan JP, Kotula PG, Lohn AJ, Marinella MJ, Li Z, Williams RS, Yang JJ. High-Speed and Low-Energy Nitride Memristors Advanced Functional Materials. 26: 5290-5296. DOI: 10.1002/Adfm.201600680  0.329
2015 Kumar S, Graves CE, Strachan JP, Kilcoyne ALD, Tyliszczak T, Nishi Y, Williams RS. In-operando synchronous time-multiplexed O K-edge x-ray absorption spectromicroscopy of functioning tantalum oxide memristors Journal of Applied Physics. 118. DOI: 10.1063/1.4926477  0.324
2015 Barcelo SJ, Wu W, Li X, Li Z, Williams RS. Nanoimprint lithography of plasmonic platforms for SERS applications Applied Physics a: Materials Science and Processing. DOI: 10.1007/S00339-015-9073-8  0.301
2015 Xia Q, Wu W, Jung GY, Pi S, Lin P, Chen Y, Li X, Li Z, Wang SY, Williams RS. Nanoimprint lithography enables memristor crossbars and hybrid circuits Applied Physics a: Materials Science and Processing. DOI: 10.1007/S00339-015-9038-Y  0.312
2013 Strachan JP, Yang JJ, Montoro LA, Ospina CA, Ramirez AJ, Kilcoyne AL, Medeiros-Ribeiro G, Williams RS. Characterization of electroforming-free titanium dioxide memristors. Beilstein Journal of Nanotechnology. 4: 467-73. PMID 23946916 DOI: 10.3762/Bjnano.4.55  0.357
2013 Choi BJ, Torrezan AC, Norris KJ, Miao F, Strachan JP, Zhang MX, Ohlberg DA, Kobayashi NP, Yang JJ, Williams RS. Electrical performance and scalability of Pt dispersed SiO2 nanometallic resistance switch. Nano Letters. 13: 3213-7. PMID 23746124 DOI: 10.1021/Nl401283Q  0.562
2013 Pickett MD, Medeiros-Ribeiro G, Williams RS. A scalable neuristor built with Mott memristors. Nature Materials. 12: 114-7. PMID 23241533 DOI: 10.1038/Nmat3510  0.346
2013 Han JW, Choi BJ, Yang JJ, Moon DI, Choi YK, Williams RS, Meyyappan M. A replacement of high-k process for CMOS transistor by atomic layer deposition Semiconductor Science and Technology. 28. DOI: 10.1088/0268-1242/28/8/082003  0.307
2013 Nickel JH, Strachan JP, Pickett MD, Schamp CT, Yang JJ, Graham JA, Williams RS. Memristor structures for high scalability: Non-linear and symmetric devices utilizing fabrication friendly materials and processes Microelectronic Engineering. 103: 66-69. DOI: 10.1016/J.Mee.2012.09.007  0.311
2012 Pickett MD, Williams RS. Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices. Nanotechnology. 23: 215202. PMID 22551985 DOI: 10.1088/0957-4484/23/21/215202  0.324
2012 Miao F, Yi W, Goldfarb I, Yang JJ, Zhang MX, Pickett MD, Strachan JP, Medeiros-Ribeiro G, Williams RS. Continuous electrical tuning of the chemical composition of TaO(x)-based memristors. Acs Nano. 6: 2312-8. PMID 22324891 DOI: 10.1021/Nn2044577  0.554
2012 Yang JJ, Zhang MX, Miao F, Strachan JP, Torrezan AC, Pickett MD, Yi W, Choi BJ, Nickel JH, Medeiros-Ribeiro G, Williams RS. Oxide based memristive devices Icsict 2012 - 2012 Ieee 11th International Conference On Solid-State and Integrated Circuit Technology, Proceedings. DOI: 10.1109/ICSICT.2012.6467661  0.473
2012 Leite MS, Kamins TI, Williams RS, Medeiros-Ribeiro G. Intermixing during ripening in Ge-Si incoherent epitaxial nanocrystals Journal of Physical Chemistry C. 116: 901-907. DOI: 10.1021/Jp2092016  0.304
2012 Goldfarb I, Miao F, Yang JJ, Yi W, Strachan JP, Zhang MX, Pickett MD, Medeiros-Ribeiro G, Williams RS. Electronic structure and transport measurements of amorphous transition-metal oxides: Observation of Fermi glass behavior Applied Physics a: Materials Science and Processing. 107: 1-11. DOI: 10.1007/S00339-012-6856-Z  0.584
2011 Torrezan AC, Strachan JP, Medeiros-Ribeiro G, Williams RS. Sub-nanosecond switching of a tantalum oxide memristor. Nanotechnology. 22: 485203. PMID 22071289 DOI: 10.1088/0957-4484/22/48/485203  0.304
2011 Miao F, Strachan JP, Yang JJ, Zhang MX, Goldfarb I, Torrezan AC, Eschbach P, Kelley RD, Medeiros-Ribeiro G, Williams RS. Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor. Advanced Materials (Deerfield Beach, Fla.). 23: 5633-40. PMID 22065427 DOI: 10.1002/Adma.201103379  0.534
2011 Ou FS, Hu M, Naumov I, Kim A, Wu W, Bratkovsky AM, Li X, Williams RS, Li Z. Hot-spot engineering in polygonal nanofinger assemblies for surface enhanced Raman spectroscopy. Nano Letters. 11: 2538-42. PMID 21604751 DOI: 10.1021/Nl201212N  0.312
2011 Xia Q, Pickett MD, Yang JJ, Zhang MX, Borghetti J, Li X, Wu W, Medeiros-Ribeiro G, Williams RS. Impact of geometry on the performance of memristive nanodevices. Nanotechnology. 22: 254026. PMID 21572201 DOI: 10.1088/0957-4484/22/25/254026  0.312
2011 Savel'ev SE, Alexandrov AS, Bratkovsky AM, Williams RS. Molecular dynamics simulations of oxide memory resistors (memristors). Nanotechnology. 22: 254011. PMID 21572187 DOI: 10.1088/0957-4484/22/25/254011  0.302
2011 Strachan JP, Strukov DB, Borghetti J, Yang JJ, Medeiros-Ribeiro G, Williams RS. The switching location of a bipolar memristor: chemical, thermal and structural mapping. Nanotechnology. 22: 254015. PMID 21572186 DOI: 10.1088/0957-4484/22/25/254015  0.333
2011 Kim A, Ou FS, Ohlberg DA, Hu M, Williams RS, Li Z. Study of molecular trapping inside gold nanofinger arrays on surface-enhanced Raman substrates. Journal of the American Chemical Society. 133: 8234-9. PMID 21520938 DOI: 10.1021/Ja200247X  0.311
2011 Strachan JP, Medeiros-Ribeiro G, Yang JJ, Zhang MX, Miao F, Goldfarb I, Holt M, Rose V, Williams RS. Spectromicroscopy of tantalum oxide memristors Applied Physics Letters. 98. DOI: 10.1063/1.3599589  0.551
2011 Yang JJ, Kobayashi NP, Strachan JP, Zhang MX, Ohlberg DAA, Pickett MD, Li Z, Medeiros-Ribeiro G, Williams RS. Dopant control by atomic layer deposition in oxide films for memristive switches Chemistry of Materials. 23: 123-125. DOI: 10.1021/Cm1020959  0.343
2011 Strukov DB, Williams RS. An ionic bottle for high-speed, long-retention memristive devices Applied Physics a: Materials Science and Processing. 102: 1033-1036. DOI: 10.1007/S00339-011-6321-4  0.331
2011 Miao F, Ohlberg DAA, Williams RS, Lau CN. Characterization of quantum conducting channels in metal/molecule/metal devices using pressure-modulated conductance microscopy Applied Physics a: Materials Science and Processing. 102: 943-948. DOI: 10.1007/S00339-011-6298-Z  0.558
2011 Yi W, Perner F, Qureshi MS, Abdalla H, Pickett MD, Yang JJ, Zhang MXM, Medeiros-Ribeiro G, Williams RS. Feedback write scheme for memristive switching devices Applied Physics a: Materials Science and Processing. 102: 973-982. DOI: 10.1007/S00339-011-6279-2  0.321
2011 Yang JJ, Strachan JP, Miao F, Zhang MX, Pickett MD, Yi W, Ohlberg DAA, Medeiros-Ribeiro G, Williams RS. Metal/TiO2 interfaces for memristive switches Applied Physics a: Materials Science and Processing. 102: 785-789. DOI: 10.1007/S00339-011-6265-8  0.572
2010 Xia Q, Yang JJ, Wu W, Li X, Williams RS. Self-aligned memristor cross-point arrays fabricated with one nanoimprint lithography step. Nano Letters. 10: 2909-14. PMID 20590084 DOI: 10.1021/Nl1017157  0.319
2010 Wu W, Hu M, Ou FS, Li Z, Williams RS. Cones fabricated by 3D nanoimprint lithography for highly sensitive surface enhanced Raman spectroscopy. Nanotechnology. 21: 255502. PMID 20508315 DOI: 10.1088/0957-4484/21/25/255502  0.323
2010 Borghetti J, Snider GS, Kuekes PJ, Yang JJ, Stewart DR, Williams RS. 'Memristive' switches enable 'stateful' logic operations via material implication. Nature. 464: 873-6. PMID 20376145 DOI: 10.1038/Nature08940  0.313
2010 Wu W, Hu M, Ou FS, Williams RS, Li Z. Rational engineering of highly sensitive SERS substrate based on nanocone structures Proceedings of Spie - the International Society For Optical Engineering. 7673. DOI: 10.1117/12.849959  0.337
2010 Yang JJ, Miao F, Pickett MD, Ohlberg DAA, Stewart DR, Lau CN, Williams RS. Corrigendum on 'The mechanism of electroforming of metal oxide memristive switches' Nanotechnology. 21: 339803-339803. DOI: 10.1088/0957-4484/21/33/339803  0.532
2010 Yang JJ, Zhang MX, Strachan JP, Miao F, Pickett MD, Kelley RD, Medeiros-Ribeiro G, Williams RS. High switching endurance in TaOx memristive devices Applied Physics Letters. 97. DOI: 10.1063/1.3524521  0.563
2010 Maitani MM, Allara DL, Ohlberg DAA, Li Z, Williams RS, Stewart DR. High integrity metal/organic device interfaces via low temperature buffer layer assisted metal atom nucleation Applied Physics Letters. 96. DOI: 10.1063/1.3377044  0.349
2009 Strukov DB, Williams RS. Four-dimensional address topology for circuits with stacked multilayer crossbar arrays. Proceedings of the National Academy of Sciences of the United States of America. 106: 20155-8. PMID 19918072 DOI: 10.1073/Pnas.0906949106  0.331
2009 Xia Q, Robinett W, Cumbie MW, Banerjee N, Cardinali TJ, Yang JJ, Wu W, Li X, Tong WM, Strukov DB, Snider GS, Medeiros-Ribeiro G, Williams RS. Memristor-CMOS hybrid integrated circuits for reconfigurable logic. Nano Letters. 9: 3640-5. PMID 19722537 DOI: 10.1021/Nl901874J  0.331
2009 Tang J, Li Z, Xia Q, Williams RS. Fractal structure formation from Ag nanoparticle films on insulating substrates. Langmuir : the Acs Journal of Surfaces and Colloids. 25: 7222-5. PMID 19496573 DOI: 10.1021/La9010532  0.361
2009 Joshua Yang J, Miao F, Pickett MD, Ohlberg DA, Stewart DR, Lau CN, Williams RS. The mechanism of electroforming of metal oxide memristive switches. Nanotechnology. 20: 215201. PMID 19423925 DOI: 10.1088/0957-4484/20/21/215201  0.717
2009 Maitani MM, Ohlberg DA, Li Z, Allara DL, Stewart DR, Williams RS. Study of SERS chemical enhancement factors using buffer layer assisted growth of metal nanoparticles on self-assembled monolayers. Journal of the American Chemical Society. 131: 6310-1. PMID 19371083 DOI: 10.1021/Ja809347Y  0.334
2009 Strukov DB, Borghetti JL, Williams RS. Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior. Small (Weinheim An Der Bergstrasse, Germany). 5: 1058-63. PMID 19226597 DOI: 10.1002/Smll.200801323  0.325
2009 Borghetti J, Li Z, Straznicky J, Li X, Ohlberg DA, Wu W, Stewart DR, Williams RS. A hybrid nanomemristor/transistor logic circuit capable of self-programming. Proceedings of the National Academy of Sciences of the United States of America. 106: 1699-703. PMID 19171903 DOI: 10.1073/Pnas.0806642106  0.321
2009 Logeeswaran Vj, Kobayashi NP, Islam MS, Wu W, Chaturvedi P, Fang NX, Wang SY, Williams RS. Ultrasmooth silver thin films deposited with a germanium nucleation layer. Nano Letters. 9: 178-82. PMID 19105737 DOI: 10.1021/Nl8027476  0.346
2009 Hu M, Tang J, Ou FS, Kuo HP, Wang SY, Li Z, Williams RS. Metal coated si nanograss as highly sensitive SERS sensors Proceedings of Spie - the International Society For Optical Engineering. 7312. DOI: 10.1117/12.818992  0.326
2009 Yang JJ, Xiang H, Ji C, Stickle WF, Stewart DR, Ohlberg DAA, Williams RS, Chang YA. Origin of inverse tunneling magnetoresistance in a symmetric junction revealed by delaminating the buried electronic interface Applied Physics Letters. 95. DOI: 10.1063/1.3272684  0.326
2009 Borghetti J, Strukov DB, Pickett MD, Yang JJ, Stewart DR, Williams RS. Electrical transport and thermometry of electroformed titanium dioxide memristive switches Journal of Applied Physics. 106. DOI: 10.1063/1.3264621  0.332
2009 Pickett MD, Strukov DB, Borghetti JL, Yang JJ, Snider GS, Stewart DR, Williams RS. Switching dynamics in titanium dioxide memristive devices Journal of Applied Physics. 106. DOI: 10.1063/1.3236506  0.338
2009 Miao F, Yang JJ, Strachan JP, Stewart D, Williams RS, Lau CN. Force modulation of tunnel gaps in metal oxide memristive nanoswitches Applied Physics Letters. 95. DOI: 10.1063/1.3227651  0.578
2009 Tang J, Ou FS, Kuo HP, Hu M, Stickle WF, Li Z, Williams RS. Silver-coated Si nanograss as highly sensitive surface-enhanced Raman spectroscopy substrates Applied Physics a: Materials Science and Processing. 96: 793-797. DOI: 10.1007/S00339-009-5305-0  0.363
2009 Kobayashi NP, Mathai S, Li X, Logeeswaran VJ, Islam MS, Lohn A, Onishi T, Straznicky J, Wang SY, Williams RS. Ensembles of indium phosphide nanowires: Physical properties and functional devices integrated on non-single crystal platforms Applied Physics a: Materials Science and Processing. 95: 1005-1013. DOI: 10.1007/S00339-009-5110-9  0.32
2009 Strukov DB, Williams RS. Exponential ionic drift: Fast switching and low volatility of thin-film memristors Applied Physics a: Materials Science and Processing. 94: 515-519. DOI: 10.1007/S00339-008-4975-3  0.317
2008 Tang J, Ponizovskaya EV, Bratkovsky AM, Stewart DR, Li Z, Williams RS. Metallic nanocrystals near ultrasmooth metallic films for surface-enhanced Raman scattering application. Nanotechnology. 19: 415702. PMID 21832653 DOI: 10.1088/0957-4484/19/41/415702  0.345
2008 Li Z, Pickett MD, Stewart D, Ohlberg DA, Li X, Wu W, Robinett W, Williams RS. Experimental demonstration of a defect-tolerant nanocrossbar demultiplexer. Nanotechnology. 19: 165203. PMID 21825637 DOI: 10.1088/0957-4484/19/16/165203  0.311
2008 Miao F, Ohlberg D, Stewart DR, Williams RS, Lau CN. Quantum conductance oscillations in metal/molecule/metal switches at room temperature. Physical Review Letters. 101: 016802. PMID 18764137 DOI: 10.1103/Physrevlett.101.016802  0.708
2008 Yang JJ, Pickett MD, Li X, Ohlberg DA, Stewart DR, Williams RS. Memristive switching mechanism for metal/oxide/metal nanodevices. Nature Nanotechnology. 3: 429-33. PMID 18654568 DOI: 10.1038/Nnano.2008.160  0.359
2008 Leite MS, Malachias A, Kycia SW, Kamins TI, Williams RS, Medeiros-Ribeiro G. Evolution of thermodynamic potentials in closed and open nanocrystalline systems: Ge-Si:Si(001) islands. Physical Review Letters. 100: 226101. PMID 18643432 DOI: 10.1103/Physrevlett.100.226101  0.317
2008 Strukov DB, Snider GS, Stewart DR, Williams RS. The missing memristor found. Nature. 453: 80-3. PMID 18451858 DOI: 10.1038/Nature06932  0.315
2008 Blackstock JJ, Donley CL, Stickle WF, Ohlberg DA, Yang JJ, Stewart DR, Williams RS. Oxide and carbide formation at titanium/organic monolayer interfaces. Journal of the American Chemical Society. 130: 4041-7. PMID 18318537 DOI: 10.1021/Ja710448E  0.37
2008 Lai Q, Li Z, Zhang L, Li X, Stickle WF, Zhu Z, Gu Z, Kamins TI, Williams RS, Chen Y. An organic/Si nanowire hybrid field configurable transistor. Nano Letters. 8: 876-80. PMID 18266332 DOI: 10.1021/Nl073112Y  0.338
2008 Li Z, Li X, Ohlberg DAA, Straznicky J, Wu W, Yu Z, Borghetti J, Tong W, Stewart D, Williams RS. Fabrication and test of nano crossbar switches/MOSFET hybrid circuits by imprinting lithography Proceedings of Spie. 6921: 692108. DOI: 10.1117/12.774144  0.35
2008 Kobayashi NP, Williams RS. Two-stage atomic layer deposition of aluminum oxide on alkanethiolate self-assembled monolayers using n-propanol and water as oxygen sources Chemistry of Materials. 20: 5356-5360. DOI: 10.1021/Cm702848Y  0.306
2007 Park I, Li Z, Pisano AP, Williams RS. Selective surface functionalization of silicon nanowires via nanoscale joule heating. Nano Letters. 7: 3106-11. PMID 17894518 DOI: 10.1021/Nl071637K  0.332
2007 Donley CL, Blackstock JJ, Stickle WF, Stewart DR, Williams RS. In-situ infrared spectroscopy of buried organic monolayers: influence of the substrate on titanium reactivity with a Langmuir-Blodgett film. Langmuir : the Acs Journal of Surfaces and Colloids. 23: 7620-5. PMID 17559236 DOI: 10.1021/La062960Q  0.347
2007 Vj L, Chan M, Islam MS, Horsley DA, Wu W, Wang SY, Williams RS. Surface Deformation of Metal Films Under Controlled Pressure for Generating Ultra-flat Metal Surfaces Mrs Proceedings. 990. DOI: 10.1557/Proc-0990-B08-22  0.308
2007 Kobayashi NP, Wang SY, Santori C, Williams RS. Indium phosphide nanoneedles on non-single crystalline semiconductor surfaces Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 46: 6346-6351. DOI: 10.1143/Jjap.46.6346  0.368
2007 Lim DK, Lee D, Lee H, Bae SS, Choi J, Kim S, Ji C, Ragan R, Ohlberg DAA, Chang YA, Williams RS. Structure and electronic properties of self-assembled Pt silicide nanowires on Si(100) Nanotechnology. 18. DOI: 10.1088/0957-4484/18/9/095706  0.566
2007 Stewart DR, Gibson G, Jung GY, Wu W, Straznicky J, Tong W, Li Z, Williams RS. Direct-write programming of nanoscale demultiplexer arrays Nanotechnology. 18: 415201. DOI: 10.1088/0957-4484/18/41/415201  0.333
2007 Snider GS, Williams RS. Nano/CMOS architectures using a field-programmable nanowire interconnect Nanotechnology. 18. DOI: 10.1088/0957-4484/18/3/035204  0.321
2007 Blackstock JJ, Stickle WF, Donley CL, Stewart DR, Williams RS. Internal structure of a molecular junction device: Chemical reduction of PtO2 by Ti evaporation onto an interceding organic monolayer Journal of Physical Chemistry C. 111: 16-20. DOI: 10.1021/Jp066266V  0.361
2007 Kobayashi NP, Donley CL, Wang SY, Williams RS. Atomic layer deposition of aluminum oxide on hydrophobic and hydrophilic surfaces Journal of Crystal Growth. 299: 218-222. DOI: 10.1016/J.Jcrysgro.2006.11.224  0.342
2007 Vanfleet RR, Basile DP, Kamins TI, Silcox J, Williams RS. Silicon-germanium interdiffusion and interfaces in self-assembled quantum dots Applied Physics a: Materials Science and Processing. 86: 1-9. DOI: 10.1007/S00339-006-3724-8  0.339
2006 You JP, Choi JH, Kim S, Li X, Williams RS, Ragan R. Regular arrays of monodisperse platinum/erbium disilicide core-shell nanowires and nanoparticles on Si(001) via a self-assembled template. Nano Letters. 6: 1858-62. PMID 16967991 DOI: 10.1021/Nl060640L  0.536
2006 Lee S, Park J, Ragan R, Kim S, Lee Z, Lim do K, Ohlberg DA, Williams RS. Self-assembled monolayers on Pt(111): molecular packing structure and strain effects observed by scanning tunneling microscopy. Journal of the American Chemical Society. 128: 5745-50. PMID 16637642 DOI: 10.1021/Ja058037C  0.486
2006 Jung GY, Johnston-Halperin E, Wu W, Yu Z, Wang SY, Tong WM, Li Z, Green JE, Sheriff BA, Boukai A, Bunimovich Y, Heath JR, Williams RS. Circuit fabrication at 17 nm half-pitch by nanoimprint lithography. Nano Letters. 6: 351-4. PMID 16522021 DOI: 10.1021/Nl052110F  0.325
2006 Johns C, Kimukin I, Islam MS, Ohlberg DAA, Donley C, Stewart DR, Wang S, Williams RS. A Novel Non-destructive Interfacing Technique for Molecular Scale Switching Junctions Mrs Proceedings. 938. DOI: 10.1557/Proc-0938-N08-01  0.333
2006 Kimukin I, Islam MS, Williams RS. Surface depletion thickness of p-doped silicon nanowires grown using metal-catalysed chemical vapour deposition Nanotechnology. 17. DOI: 10.1088/0957-4484/17/11/S03  0.374
2006 Yasseri AA, Sharma S, Kamins TI, Li Z, Williams RS. Growth and use of metal nanocrystal assemblies on high-density silicon nanowires formed by chemical vapor deposition Applied Physics a: Materials Science and Processing. 82: 659-664. DOI: 10.1007/S00339-005-3446-3  0.376
2005 Jung GY, Li Z, Wu W, Ganapathiappan S, Li X, Olynick DL, Wang SY, Tong WM, Williams RS. Improved pattern transfer in nanoimprint lithography at 30 nm half-pitch by substrate-surface functionalization. Langmuir : the Acs Journal of Surfaces and Colloids. 21: 6127-30. PMID 15982008 DOI: 10.1021/La050021C  0.308
2005 Young G, Wu W, Lee H, Wang SY, Tong WM, Williams RS. Fabrication of Multi-bit Crossbar Circuits at Sub-50 nm Half-pitch by Using UV-based Nanoimprint Lithography Journal of Photopolymer Science and Technology. 18: 565-570. DOI: 10.2494/Photopolymer.18.565  0.337
2005 Sharma S, Kamins TI, Islam MS, Williams RS, Marshall AF. Structural characteristics and connection mechanism of gold-catalyzed bridging silicon nanowires Journal of Crystal Growth. 280: 562-568. DOI: 10.1016/J.Jcrysgro.2005.04.039  0.36
2005 Islam MS, Sharma S, Kamins TI, Williams RS. A novel interconnection technique for manufacturing nanowire devices Applied Physics A. 80: 1133-1140. DOI: 10.1007/S00339-004-3177-X  0.365
2005 Wu W, Jung G-, Olynick DL, Straznicky J, Li Z, Li X, Ohlberg DAA, Chen Y, Wang S-, Liddle JA, Tong WM, Williams RS. One-kilobit cross-bar molecular memory circuits at 30-nm half-pitch fabricated by nanoimprint lithography Applied Physics A. 80: 1173-1178. DOI: 10.1007/S00339-004-3176-Y  0.307
2005 Lau C, Stewart D, Bockrath M, Williams RS. Scanned probe imaging of nanoscale conducting channels in Pt/alkanoic acid monolayer/Ti devices Applied Physics A. 80: 1373-1378. DOI: 10.1007/S00339-004-3171-3  0.337
2005 Islam MS, Jung GY, Ha T, Stewart DR, Chen Y, Wang SY, Williams RS. Ultra-smooth platinum surfaces for nanoscale devices fabricated using chemical mechanical polishing Applied Physics A. 80: 1385-1389. DOI: 10.1007/S00339-004-3170-4  0.36
2005 Richter CA, Stewart DR, Ohlberg DAA, Williams RS. Electrical characterization of Al/AlOx/molecule/Ti/Al devices Applied Physics a: Materials Science and Processing. 80: 1355-1362. DOI: 10.1007/S00339-004-3169-X  0.309
2005 Ragan R, Kim S, Li X, Williams RS. Platinum passivation of self-assembled erbium disilicide nanowire arrays on Si(001) Applied Physics a: Materials Science and Processing. 80: 1339-1342. DOI: 10.1007/S00339-004-3162-4  0.564
2005 Ohlberg D, Blackstock JJ, Ragan R, Kim S, Williams RS. Optimization of in-vacuo template-stripped Pt surfaces via UHV STM Applied Physics a: Materials Science and Processing. 80: 1327-1334. DOI: 10.1007/S00339-004-3161-5  0.569
2005 Lee D, Lim DK, Bae SS, Kim S, Ragan R, Ohlberg DAA, Chen Y, Williams RS. Unidirectional hexagonal rare-earth disilicide nanowires on vicinal Si(100)-2×1 Applied Physics a: Materials Science and Processing. 80: 1311-1313. DOI: 10.1007/S00339-004-3158-0  0.567
2005 Kamins TI, Williams RS, Ohlberg DAA. Annealing of chemically vapor deposited nanoscale Ti-Si islands on Si Applied Physics A. 80: 1279-1286. DOI: 10.1007/S00339-004-3156-2  0.318
2005 Sharma S, Kamins TI, Williams RS. Synthesis of thin silicon nanowires using gold-catalyzed chemical vapor deposition Applied Physics A. 80: 1225-1229. DOI: 10.1007/S00339-004-3155-3  0.36
2005 Ji C, Ragan R, Kim S, Chang YA, Chen Y, Ohlberg DAA, Williams RS. Surface Reconstruction of Pt/Si(001) Applied Physics a: Materials Science and Processing. 80: 1301-1304. DOI: 10.1007/S00339-004-3150-8  0.534
2004 Islam MS, Sharma S, Kamins TI, Williams RS. Ultrahigh-density silicon nanobridges formed between two vertical silicon surfaces Nanotechnology. 15. DOI: 10.1088/0957-4484/15/5/L01  0.379
2004 Kamins TI, Ohlberg DAA, Williams RS. Deposition and structure of chemically vapor deposited nanoscale Ti-Si islands on Si Journal of Applied Physics. 96: 5195-5201. DOI: 10.1063/1.1789626  0.321
2004 Kamins TI, Medeiros-Ribeiro G, Ohlberg DAA, Williams RS. Annealing of phosphorus-doped Ge islands on Si(001) Journal of Applied Physics. 95: 1562-1567. DOI: 10.1063/1.1635994  0.32
2004 Kamins TI, Li X, Williams RS, Liu X. Growth and Structure of Chemically Vapor Deposited Ge Nanowires on Si Substrates Nano Letters. 4: 503-506. DOI: 10.1021/Nl035166N  0.364
2004 Lau CN, Stewart DR, Williams RS, Bockrath M. Direct Observation of Nanoscale Switching Centers in Metal/Molecule/Metal Structures Nano Letters. 4: 569-572. DOI: 10.1021/Nl035117A  0.337
2004 Stewart DR, Ohlberg DAA, Beck PA, Chen Y, Williams RS, Jeppesen JO, Nielsen KA, Stoddart JF. Molecule-Independent Electrical Switching in Pt/Organic Monolayer/Ti Devices Nano Letters. 4: 133-136. DOI: 10.1021/Nl034795U  0.318
2004 Ragan R, Ohlberg D, Blackstock JJ, Kim S, Williams RS. Atomic surface structure of UHV-prepared template-stripped platinum and single-crystal platinum(111) Journal of Physical Chemistry B. 108: 20187-20192. DOI: 10.1021/Jp0466789  0.567
2004 Li Z, Kamins TI, Li X, Williams RS. Chlorination of Si surfaces with gaseous hydrogen chloride at elevated temperatures Surface Science. 554. DOI: 10.1016/J.Susc.2004.01.057  0.336
2004 Sharma S, Kamins TI, Williams RS. Diameter control of Ti-catalyzed silicon nanowires Journal of Crystal Growth. 267: 613-618. DOI: 10.1016/J.Jcrysgro.2004.04.042  0.337
2003 Malachias A, Kycia S, Medeiros-Ribeiro G, Magalhães-Paniago R, Kamins TI, Williams RS. 3D composition of epitaxial nanocrystals by anomalous X-ray diffraction: observation of a Si-rich core in Ge domes on Si(100). Physical Review Letters. 91: 176101. PMID 14611360 DOI: 10.1103/Physrevlett.91.176101  0.316
2003 Rudd RE, Briggs GA, Sutton AP, Medeiros-Ribeiro G, Williams RS. Equilibrium model of bimodal distributions of epitaxial island growth. Physical Review Letters. 90: 146101. PMID 12731931 DOI: 10.1103/Physrevlett.90.146101  0.315
2003 Chang S, Li Z, Lau CN, Larade B, Williams RS. Investigation of a model molecular-electronic rectifier with an evaporated Ti-metal top contact Applied Physics Letters. 83: 3198-3200. DOI: 10.1063/1.1616989  0.364
2003 Kamins TI, Medeiros-Ribeiro G, Ohlberg DAA, Williams RS. Influence of phosphine on Ge/Si(001) island growth by chemical vapor deposition Journal of Applied Physics. 94: 4215-4224. DOI: 10.1063/1.1604957  0.333
2003 Kamins TI, Li X, Williams RS. Thermal stability of Ti-catalyzed Si nanowires Applied Physics Letters. 82: 263-265. DOI: 10.1063/1.1534616  0.346
2003 Li Z, Chang S, Williams RS. Self-Assembly of Alkanethiol Molecules onto Platinum and Platinum Oxide Surfaces Langmuir. 19: 6744-6749. DOI: 10.1021/La034245B  0.341
2003 Li Z, Beck P, Ohlberg DAA, Stewart DR, Williams RS. Surface properties of platinum thin films as a function of plasma treatment conditions Surface Science. 529: 410-418. DOI: 10.1016/S0039-6028(03)00015-3  0.305
2003 Ragan R, Chen Y, Ohlberg DAA, Medeiros-Ribeiro G, Williams RS. Ordered arrays of rare-earth silicide nanowires on Si(0 0 1) Journal of Crystal Growth. 251: 657-661. DOI: 10.1016/S0022-0248(02)02292-3  0.32
2002 Chen Y, Ohlberg DAA, Williams RS. Nanowires of four epitaxial hexagonal silicides grown on Si(001) Journal of Applied Physics. 91: 3213-3218. DOI: 10.1063/1.1428807  0.326
2002 Kamins TI, Williams RS, Hesjedal T, Harris JS. Chemically vapor deposited Si nanowires nucleated by self-assembled Ti islands on patterned and unpatterned Si substrates Physica E-Low-Dimensional Systems & Nanostructures. 13: 995-998. DOI: 10.1016/S1386-9477(02)00287-4  0.337
2002 Kamins TI, Medeiros-Ribeiro G, Ohlberg DAA, Williams RS. Effect of phosphorus on island formation Physica E-Low-Dimensional Systems & Nanostructures. 13: 974-977. DOI: 10.1016/S1386-9477(02)00248-5  0.306
2001 Kamins TI, Ohlberg DAA, Williams RS. Effect of phosphorus on Ge/Si(001) island formation Applied Physics Letters. 78: 2220-2222. DOI: 10.1063/1.1361096  0.323
2000 Williams RS, Medeiros-Ribeiro G, Kamins TI, Ohlberg DAA. Thermodynamics of the size and shape of nanocrystals: epitaxial Ge on Si(001). Annual Review of Physical Chemistry. 51: 527-551. PMID 11031292 DOI: 10.1146/Annurev.Physchem.51.1.527  0.314
2000 Henstrom WL, Liu C, Gibson JM, Kamins TI, Williams RS. Dome-to-pyramid shape transition in Ge/Si islands due to strain relaxation by interdiffusion Applied Physics Letters. 77: 1623-1625. DOI: 10.1063/1.1309027  0.308
2000 Chen Y, Ohlberg DAA, Medeiros-Ribeiro G, Chang YA, Williams RS. Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001) Applied Physics Letters. 76: 4004-4006. DOI: 10.1063/1.126848  0.323
2000 Kamins TI, Williams RS, Chen Y, Chang Y-, Chang YA. Chemical vapor deposition of Si nanowires nucleated by TiSi2 islands on Si Applied Physics Letters. 76: 562-564. DOI: 10.1063/1.125852  0.343
2000 Briggs GAD, Basile DP, Medeiros-Ribeiro G, Kamins TI, Ohlberg DAA, Williams RS. The incommensurate nature of epitaxial titanium disilicide islands on Si(001) Surface Science. 457: 147-156. DOI: 10.1016/S0039-6028(00)00347-2  0.336
1999 Kamins TI, Williams RS, Basile DP. Self-aligning of self-assembled Ge islands on Si(001) Nanotechnology. 10: 117-121. DOI: 10.1088/0957-4484/10/2/302  0.324
1999 Kamins TI, Medeiros-Ribeiro G, Ohlberg DAA, Williams RS. Evolution of Ge islands on Si(001) during annealing Journal of Applied Physics. 85: 1159-1171. DOI: 10.1063/1.369255  0.319
1999 Medeiros-Ribeiro G, Ohlberg DAA, Bowler DR, Tanner RE, Briggs GAD, Williams RS. Titanium disilicide nanostructures: two phases and their surfaces Surface Science. 431: 116-127. DOI: 10.1016/S0039-6028(99)00434-3  0.326
1998 Ren JZ, Rose GA, Williams RS, Booth CH, Shuh DK. Atomic structure and phase transitions in disordered Ti1−xGaxN thin films grown by pulsed laser deposition Journal of Applied Physics. 83: 7613-7617. DOI: 10.1063/1.367877  0.326
1998 Kamins TI, Briggs GAD, Williams RS. Influence of HCl on the chemical vapor deposition and etching of Ge islands on Si(001) Applied Physics Letters. 73: 1862-1864. DOI: 10.1063/1.122307  0.329
1998 Kamins TI, Medeiros-Ribeiro G, Ohlberg DAA, Williams RS. Dome-to-pyramid transition induced by alloying of Ge islands on Si(001) Applied Physics A. 67: 727-730. DOI: 10.1007/S003390050845  0.305
1997 Kamins TI, Williams RS. Lithographic positioning of self-assembled Ge islands on Si(001) Applied Physics Letters. 71: 1201-1203. DOI: 10.1063/1.119625  0.308
1997 Feiler D, Williams RS, Talin AA, Yoon H, Goorsky MS. Pulsed laser deposition of epitaxial AlN, GaN, and InN thin films on sapphire(0001) Journal of Crystal Growth. 171: 12-20. DOI: 10.1016/S0022-0248(96)00284-9  0.307
1996 Morgan BA, Ring KM, Kavanagh KL, Talin AA, Williams RS, Yasuda T, Yasui T, Segawa Y. Au/ZnSe contacts characterized by ballistic electron emission microscopy Journal of Applied Physics. 79: 1532-1535. DOI: 10.1063/1.360996  0.304
1995 Ohlberg DAA, Rose G, Ren J, Williams RS. Low Temperature Film Growth by Supersonic Jets of CBr 4 Mrs Proceedings. 388. DOI: 10.1557/Proc-388-233  0.307
1995 Siebentritt S, Treece RE, Williams RS. Properties of silicon‐tin alloys prepared by pulsed laser deposition Journal of Applied Physics. 78: 3915-3919. DOI: 10.1063/1.359909  0.32
1995 Ngo TT, Williams RS. Kinetic routes to the growth of monodisperse islands Applied Physics Letters. 66: 1906-1908. DOI: 10.1063/1.113317  0.306
1994 Talin AA, Ngo T, Williams RS, Morgan BA, Ring KM, Kavanagh KL. Lateral Variation in the Schottky Barrier Height and Observation of Critical Lengths at Au/PtSi/(100)Si and Au/(100)GaAs Diodes Mrs Proceedings. 337. DOI: 10.1557/Proc-337-319  0.356
1993 Talin AA, Ohlberg DAA, Williams RS, Sullivan P, Koutselas I, Williams B, Kavanagh KL. Time dependent ballistic electron emission microscopy studies of a Au/(100)GaAs interface with a native oxide diffusion barrier Applied Physics Letters. 62: 2965-2967. DOI: 10.1063/1.109158  0.315
1993 Maury F, Talin AA, Kaesz HD, Williams RS. Epitaxial growth of cobalt-gallium on gallium arsenide by organometallic chemical vapor deposition Chemistry of Materials. 5: 84-89. DOI: 10.1021/Cm00025A017  0.301
1993 Ngo T, Brandt L, Williams RS, Kaesz HD. Scanning tunneling microscopy study of platinum deposited on graphite by metalorganic chemical vapor deposition Surface Science. 291: 411-417. DOI: 10.1016/0039-6028(93)90458-V  0.32
1992 Yuan H, Williams RS. The Growth and Characterization of Germanium-Carbon Alloy Thin Films Mrs Proceedings. 270: 91. DOI: 10.1557/Proc-270-91  0.311
1992 Charatan RM, Williams RS. Initial stages of the formation of the Au/GaAs(001) interface: A low‐energy ion scattering study Journal of Applied Physics. 72: 5226-5232. DOI: 10.1063/1.352355  0.344
1992 Cohan JS, Yuan H, Williams RS, Zink JI. Laser-assisted organometallic chemical vapor deposition of films of rhodium and iridium Applied Physics Letters. 60: 1402-1403. DOI: 10.1063/1.107304  0.303
1992 Tong WM, Snyder EJ, Williams RS, Yanase A, Segawa Y, Anderson MS. Atomic force microscope studies of CuCl island formation on CaF2(111) substrates Surface Science. 277. DOI: 10.1016/0167-2584(92)90135-R  0.318
1991 Snyder EJ, Anderson MS, Tong WM, Williams RS, Anz SJ, Alvarez MM, Rubin Y, Diederich FN, Whetten RL. Atomic Force Microscope Studies of Fullerene Films: Highly Stable C60 fcc (311) Free Surfaces. Science (New York, N.Y.). 253: 171-3. PMID 17779132 DOI: 10.1126/Science.253.5016.171  0.332
1991 Baugh DA, Talin AA, Williams RS, Kuo TC, Wang KL. Phase stability versus the lattice mismatch of (100)Co1-xGax thin films on (100)GaAs Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 9: 2154-2157. DOI: 10.1116/1.585756  0.432
1990 Kim YK, Baugh DA, Shuh DK, Williams RS, Sadwick LP, Wang KL. Structural and chemical stability of thin films of Pt-Ga intermetallic compounds of GaAs (001) Journal of Materials Research. 5: 2139-2151. DOI: 10.1557/Jmr.1990.2139  0.685
1990 Williams RS, Daley RS, Huang JH, Charatan RM. Initial stages of metal/semiconductor interface formation: Au and Ag on Si(111) Applied Surface Science. 41: 70-74. DOI: 10.1016/0169-4332(89)90035-4  0.357
1990 Daley RS, Charatan RM, Williams RS. An investigation of the Si(111)−(√3 × √3)R30°−Ag surface by Li+ impact collision ion scattering spectroscopy Surface Science. 240: 136-150. DOI: 10.1016/0039-6028(90)90737-S  0.343
1989 Shuh DK, Kim YK, Williams RS. A bolt‐on deposition source for ultrahigh vacuum growth of intermetallic compound films Journal of Vacuum Science and Technology. 7: 2813-2814. DOI: 10.1116/1.576186  0.306
1989 Chen YJ, Kaesz HD, Kim YK, Müller HJ, Williams RS, Xue Z. Chemical vapor deposition of CoGa and PtGa2 thin films from mixed-metalorganometallic compounds Applied Physics Letters. 55: 2760-2762. DOI: 10.1063/1.102370  0.321
1988 Huang JH, Williams RS. Surface-structure analysis of Au overlayers on Si by impact-collision ion-scattering spectroscopy: √3×√3 and 6×6 Si(111)/Au Physical Review B. 38: 4022-4032. PMID 9946777 DOI: 10.1103/Physrevb.38.4022  0.325
1988 Sadwick LP, Wang KL, Shuh DK, Kim YK, Williams RS. Thermodynamically Stable Conducting Films of Intermetallic PtGa2 on Gallium Arsenide Mrs Proceedings. 144: 595. DOI: 10.1557/Proc-144-595  0.452
1988 Kaesz HD, Williams RS, Hicks RF, Chen YA, Xue Z, Xu D, Shuh DK, Thridandamt H. Low-Temperature Organometallic Chemical Vapor Deposition of Transition Metals Mrs Proceedings. 131. DOI: 10.1557/Proc-131-395  0.345
1988 Williams RS, Shuh DK, Segawa Y. Growth and luminescence spectroscopy of a CuCl quantum well structure Journal of Vacuum Science and Technology. 6: 1950-1952. DOI: 10.1116/1.575212  0.33
1988 Huang JH, Williams RS. The atomic structures of the Si(111)‐√3×√3‐ and ‐6×6‐Au surfaces studied by low‐energy ion scattering Journal of Vacuum Science and Technology. 6: 689-691. DOI: 10.1116/1.575154  0.32
1988 Koplitz LV, Shuh DK, Chen Y, Williams RS, Zink JI. Laser‐driven chemical vapor deposition of platinum at atmospheric pressure and room temperature fromCpPt(CH3)3 Applied Physics Letters. 53: 1705-1707. DOI: 10.1063/1.100472  0.317
1988 Huang JH, Williams RS. Surface structure of Si(111)-5 × 1-Au characterized by impact collision ion scattering spectroscopy Surface Science. 204: 445-454. DOI: 10.1016/0039-6028(88)90225-7  0.338
1988 Kim S, Williams R. Mixed-basis band structure interpolation scheme applied to the rocksalt structure compounds TiC, TIN and TiO Journal of Physics and Chemistry of Solids. 49: 1307-1315. DOI: 10.1016/0022-3697(88)90213-2  0.506
1987 Kim S, Williams RS. Semiempirical band structure and partial density of states of CuCl. Physical Review. B, Condensed Matter. 35: 2823-2826. PMID 9941760 DOI: 10.1103/Physrevb.35.2823  0.503
1987 Huang JH, Daley RS, Shuh DK, Williams RS. Surface structure of epitaxial Nisi2 grown on Si(001) determined by low energy ion scattering techniques Surface Science. 186: 115-137. DOI: 10.1016/S0039-6028(87)80038-9  0.348
1986 Huang JH, Williams RS. Surface Structure Investigation of Epitaxial Nickel Silicides on Si(001) Mrs Proceedings. 77: 767. DOI: 10.1557/Proc-77-767  0.331
1986 Kim S, Williams RS. Summary Abstract: Analysis of chemical bonding in TiC, TiN, and TiO using second‐principles band structures from photoemission data Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 4: 1603-1603. DOI: 10.1116/1.573518  0.507
1986 Lince JR, Williams RS. Comparison of chemically inert and reactive metal-compound-semiconductor interfaces: AuGa2 and gold on GaSb(001) Thin Solid Films. 137: 251-265. DOI: 10.1016/0040-6090(86)90027-1  0.354
1986 Huang JH, Williams RS. Ion scattering study of the surface structure of epitaxial NiSi2 on Si(001) Solid State Communications. 60: 689-692. DOI: 10.1016/0038-1098(86)90422-9  0.33
1985 Nelson JG, Gignac WJ, Kim S, Lince JR, Williams RS. Angle-resolved photoemission study of AuGa2 and AuIn2 intermetallic compounds. Physical Review. B, Condensed Matter. 31: 3469-3476. PMID 9936237 DOI: 10.1103/Physrevb.31.3469  0.471
1985 Kim S, Nelson JG, Williams RS. Mixed-basis band-structure interpolation scheme applied to the fluorite-structure compounds NiSi2, AuAl2, AuGa2, and AuIn2. Physical Review. B, Condensed Matter. 31: 3460-3468. PMID 9936236 DOI: 10.1103/Physrevb.31.3460  0.443
1985 Davis RF, Williams RS, Kevan SD, Wehner PS, Shirley DA. Angle-resolved photoemission studies of the valence-band structure of stepped crystal surfaces: Cu(S)- Physical Review. B, Condensed Matter. 31: 1997-2004. PMID 9936004  0.457
1985 Lince JR, Williams RS. AuGa2 on GaSb(001): An epitaxial, thermodynamically stabilized metal/III–V compound semiconductor interface Journal of Vacuum Science & Technology B. 3: 1217-1220. DOI: 10.1116/1.583043  0.349
1985 Davis RF, Williams RS, Kevan SD, Wehner PS, Shirley DA. Angle-resolved photoemission studies of the valence-band structure of stepped crystal surfaces: Cu(S)-[3(111)×(100)] Physical Review B. 31: 1997-2004. DOI: 10.1103/PhysRevB.31.1997  0.462
1984 Nelson JG, Lince JR, Gignac WJ, Williams RS. Characterization of the Surface net and Electronic Structure of AuGa2(001) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 2: 534-537. DOI: 10.1116/1.572439  0.31
1983 Lince JR, Nelson JG, Williams RS. Epitaxial growth of Ag films on Ge(001) Journal of Vacuum Science & Technology B. 1: 553-557. DOI: 10.1116/1.582597  0.336
1983 Nelson JG, Gignac WJ, Williams RS, Robey SW, Tobin JG, Shirley DA. Angle-resolved photoelectron spectroscopy investigation of intrinsic surface states on the Ge(001)-(2 × 1) reconstructed surface Physical Review B. 27: 3924-3926. DOI: 10.1103/Physrevb.27.3924  0.558
1982 Williams RS. Low energy Ar ion bombardment damage of Si, GaAs, and InP surfaces Solid State Communications. 41: 153-156. DOI: 10.1016/0038-1098(82)91056-0  0.309
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