| Year |
Citation |
Score |
| 2020 |
Vuong P, Mballo A, Sundaram S, Patriarche G, Halfaya Y, Karrakchou S, Srivastava A, Krishnan K, Sama NY, Ayari T, Gautier S, Voss PL, Salvestrini JP, Ougazzaden A. Single crystalline boron rich B(Al)N alloys grown by MOVPE Applied Physics Letters. 116: 42101. DOI: 10.1063/1.5135505 |
0.348 |
|
| 2019 |
Wu Q, Guo Y, Sundaram S, Yan J, Zhang L, Wei T, Wei X, Wang J, Ougazzaden A, Li J. Exfoliation of AlN film using two-dimensional multilayer hexagonal BN for deep-ultraviolet light-emitting diodes Applied Physics Express. 12: 15505. DOI: 10.7567/1882-0786/Aaeede |
0.367 |
|
| 2019 |
Huni WE, Karrakchou S, Halfaya Y, Arif M, Jordan MB, Puybaret R, Ayari T, Ennakrachi H, Bishop C, Gautier S, Ahaitouf A, Voss PL, Salvestrini JP, Ougazzaden A. Nanopyramid-based absorber to boost the efficiency of InGaN solar cells Solar Energy. 190: 93-103. DOI: 10.1016/J.Solener.2019.07.090 |
0.371 |
|
| 2019 |
Sundaram S, Li X, Alam S, Halfaya Y, Patriarche G, Ougazzaden A. Wafer-scale MOVPE growth and characterization of highly ordered h-BN on patterned sapphire substrates Journal of Crystal Growth. 509: 40-43. DOI: 10.1016/J.Jcrysgro.2018.12.016 |
0.388 |
|
| 2019 |
Sundaram S, Li X, Alam S, Ayari T, Halfaya Y, Patriarche G, Voss PL, Salvestrini JP, Ougazzaden A. MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substrates Journal of Crystal Growth. 507: 352-356. DOI: 10.1016/J.Jcrysgro.2018.10.060 |
0.394 |
|
| 2019 |
Ayari T, Sundaram S, Bishop C, Mballo A, Vuong P, Halfaya Y, Karrakchou S, Gautier S, Voss PL, Salvestrini JP, Ougazzaden A. Heterogeneous Integration: Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications (Adv. Mater. Technol. 10/2019) Advanced Materials and Technologies. 4: 1970057. DOI: 10.1002/Admt.201970057 |
0.332 |
|
| 2019 |
Ayari T, Sundaram S, Bishop C, Mballo A, Vuong P, Halfaya Y, Karrakchou S, Gautier S, Voss PL, Salvestrini JP, Ougazzaden A. Novel Scalable Transfer Approach for Discrete III‐Nitride Devices Using Wafer‐Scale Patterned h‐BN/Sapphire Substrate for Pick‐and‐Place Applications Advanced Materials and Technologies. 4: 1900164. DOI: 10.1002/Admt.201900164 |
0.342 |
|
| 2019 |
Sundaram S, Li X, Halfaya Y, Ayari T, Patriarche G, Bishop C, Alam S, Gautier S, Voss PL, Salvestrini JP, Ougazzaden A. Light‐Emitting Diodes: Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride (Adv. Mater. Interfaces 16/2019) Advanced Materials Interfaces. 6: 1970102. DOI: 10.1002/Admi.201970102 |
0.391 |
|
| 2019 |
Sundaram S, Li X, Halfaya Y, Ayari T, Patriarche G, Bishop C, Alam S, Gautier S, Voss PL, Salvestrini JP, Ougazzaden A. Large‐Area van der Waals Epitaxial Growth of Vertical III‐Nitride Nanodevice Structures on Layered Boron Nitride Advanced Materials Interfaces. 6: 1900207. DOI: 10.1002/Admi.201900207 |
0.406 |
|
| 2018 |
Shim J, Bae SH, Kong W, Lee D, Qiao K, Nezich D, Park YJ, Zhao R, Sundaram S, Li X, Yeon H, Choi C, Kum H, Yue R, Zhou G, ... ... Ougazzaden A, et al. Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials. Science (New York, N.Y.). PMID 30309906 DOI: 10.1126/Science.Aat8126 |
0.322 |
|
| 2018 |
Munson CE, Gaimard Q, Merghem K, Sundaram S, Rogers DJ, Sanoit Jd, Voss PL, Ramdane A, Salvestrini JP, Ougazzaden A. Modeling, design, fabrication and experimentation of a GaN-based, 63Ni betavoltaic battery Journal of Physics D. 51: 35101. DOI: 10.1088/1361-6463/Aa9E41 |
0.353 |
|
| 2018 |
Ayari T, Sundaram S, Li X, Alam S, Bishop C, Huni WE, Jordan MB, Halfaya Y, Gautier S, Voss PL, Salvestrini JP, Ougazzaden A. Heterogeneous Integration of Thin-Film InGaN-Based Solar Cells on Foreign Substrates with Enhanced Performance Acs Photonics. 5: 3003-3008. DOI: 10.1021/Acsphotonics.8B00663 |
0.356 |
|
| 2017 |
Li X, Jordan MB, Ayari T, Sundaram S, El Gmili Y, Alam S, Alam M, Patriarche G, Voss PL, Paul Salvestrini J, Ougazzaden A. Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE. Scientific Reports. 7: 786. PMID 28400555 DOI: 10.1038/S41598-017-00865-7 |
0.432 |
|
| 2017 |
Puybaret R, Rogers D, El Gmili Y, Sundaram S, Jordan M, Li X, Patriarche G, Teherani F, Sandana E, Bove P, Voss P, McClintock R, Razeghi M, Ferguson I, Salvestrini JP, ... Ougazzaden A, et al. Nanoselective area growth of defect-free thick indium-rich InGaN nanostructures on sacrificial ZnO templates. Nanotechnology. PMID 28358724 DOI: 10.1088/1361-6528/Aa6A43 |
0.433 |
|
| 2017 |
Gmili YE, Bonanno P, Sundaram S, Li X, Puybaret R, Patriarche G, Pradalier C, Decobert J, Voss P, Salvestrini J, Ougazzaden A. Mask effect in nano-selective- area-growth by MOCVD on thickness enhancement, indium incorporation, and emission of InGaN nanostructures on AlN-buffered Si(111) substrates Optical Materials Express. 7: 376-385. DOI: 10.1364/Ome.7.000376 |
0.373 |
|
| 2017 |
Alam S, Sundaram S, Li X, Gmili YE, Elouneg-Jamroz M, Robin IC, Patriarche G, Salvestrini J, Voss PL, Ougazzaden A. Emission wavelength red-shift by using “semi-bulk” InGaN buffer layer in InGaN/InGaN multiple-quantum-well Superlattices and Microstructures. 112: 279-286. DOI: 10.1016/J.Spmi.2017.09.032 |
0.408 |
|
| 2017 |
Alam S, Sundaram S, Elouneg-Jamroz M, Li X, Gmili YE, Robin IC, Voss PL, Salvestrini J, Ougazzaden A. InGaN/InGaN multiple-quantum-well grown on InGaN/GaN semi-bulk buffer for blue to cyan emission with improved optical emission and efficiency droop Superlattices and Microstructures. 104: 291-297. DOI: 10.1016/J.Spmi.2017.02.036 |
0.39 |
|
| 2017 |
Amor S, Ahaitouf A, Ahaitouf A, Salvestrini JP, Ougazzaden A. Evidence of minority carrier traps contribution in deep level transient spectroscopy measurement in n–GaN Schottky diode Superlattices and Microstructures. 101: 529-536. DOI: 10.1016/J.Spmi.2016.11.011 |
0.316 |
|
| 2017 |
Arif M, Elhuni W, Streque J, Sundaram S, Belahsene S, El Gmili Y, Jordan M, Li X, Patriarche G, Slaoui A, Migan A, Abderrahim R, Djebbour Z, Voss PL, Salvestrini JP, ... Ougazzaden A, et al. Improving InGaN heterojunction solar cells efficiency using a semibulk absorber Solar Energy Materials and Solar Cells. 159: 405-411. DOI: 10.1016/J.Solmat.2016.09.030 |
0.333 |
|
| 2017 |
El-Huni W, Migan-Dubois A, Djebbour Z, Voss PL, Salvestrini J, Ougazzaden A. Optimization of semibulk InGaN-based solar cell using realistic modeling Solar Energy. 157: 687-691. DOI: 10.1016/J.Solener.2017.08.074 |
0.378 |
|
| 2017 |
Alam S, Sundaram S, li X, Jamroz ME, Gmili YE, Robin IC, Voss PL, Salvestrini J, Ougazzaden A. Influence of barrier layer indium on efficiency and wavelength of InGaN multiple quantum well (MQW) with and without semi-bulk InGaN buffer for blue to green regime emission Physica Status Solidi (a). 214: 1600868. DOI: 10.1002/Pssa.201600868 |
0.39 |
|
| 2017 |
Alam S, Sundaram S, Haas H, Li X, Gmili YE, Jamroz ME, Robin IC, Voss PL, Salvestrini J, Ougazzaden A. Investigation of p‐contact performance for indium rich InGaN based light emitting diodes and solar cells Physica Status Solidi (a). 214: 1600496. DOI: 10.1002/Pssa.201600496 |
0.375 |
|
| 2016 |
Sundaram S, Li X, El Gmili Y, Bonanno PL, Puybaret R, Pradalier C, Pantzas K, Patriarche G, Voss PL, Salvestrini JP, Ougazzaden A. Single-crystal nanopyramidal BGaN by nanoselective area growth on AlN/Si(111) and GaN templates. Nanotechnology. 27: 115602. PMID 26878255 DOI: 10.1088/0957-4484/27/11/115602 |
0.374 |
|
| 2016 |
Bishop C, Halfaya Y, Soltani A, Sundaram S, Li X, Streque J, El Gmili Y, Voss PL, Salvestrini JP, Ougazzaden A. Experimental Study and Device Design of NO, NO2, and NH3 Gas Detection for a Wide Dynamic and Large Temperature Range Using Pt/AlGaN/GaN HEMT Ieee Sensors Journal. 16: 6828-6838. DOI: 10.1109/Jsen.2016.2593050 |
0.302 |
|
| 2016 |
Rajan A, Rogers DJ, Ton-That C, Zhu L, Phillips MR, Sundaram S, Gautier S, Moudakir T, El-Gmili Y, Ougazzaden A, Sandana VE, Teherani FH, Bove P, Prior KA, Djebbour Z, et al. Wafer-scale epitaxial lift-off of optoelectronic grade GaN from a GaN substrate using a sacrificial ZnO interlayer Journal of Physics D: Applied Physics. 49. DOI: 10.1088/0022-3727/49/31/315105 |
0.426 |
|
| 2016 |
Arif M, Salvestrini JP, Streque J, Jordan MB, El Gmili Y, Sundaram S, Li X, Patriarche G, Voss PL, Ougazzaden A. Role of V-pits in the performance improvement of InGaN solar cells Applied Physics Letters. 109. DOI: 10.1063/1.4963817 |
0.33 |
|
| 2016 |
Ayari T, Sundaram S, Li X, El Gmili Y, Voss PL, Salvestrini JP, Ougazzaden A. Wafer-scale controlled exfoliation of metal organic vapor phase epitaxy grown InGaN/GaN multi quantum well structures using low-tack two-dimensional layered h-BN Applied Physics Letters. 108. DOI: 10.1063/1.4948260 |
0.45 |
|
| 2016 |
Puybaret R, Patriarche G, Jordan MB, Sundaram S, Gmili YE, Salvestrini JP, Voss PL, De Heer WA, Berger C, Ougazzaden A. Nanoselective area growth of GaN by metalorganic vapor phase epitaxy on 4H-SiC using epitaxial graphene as a mask Applied Physics Letters. 108. DOI: 10.1063/1.4943205 |
0.371 |
|
| 2016 |
Li X, Sundaram S, El Gmili Y, Ayari T, Puybaret R, Patriarche G, Voss PL, Salvestrini JP, Ougazzaden A. Large-area two-dimensional layered hexagonal boron nitride grown on sapphire by metalorganic vapor phase epitaxy Crystal Growth and Design. 16: 3409-3415. DOI: 10.1021/Acs.Cgd.6B00398 |
0.418 |
|
| 2016 |
Pantzas K, Rogers DJ, Bove P, Sandana VE, Teherani FH, El Gmili Y, Molinari M, Patriarche G, Largeau L, Mauguin O, Suresh S, Voss PL, Razeghi M, Ougazzaden A. Chemical lift-off and direct wafer bonding of GaN/InGaN P-I-N structures grown on ZnO Journal of Crystal Growth. 435: 105-109. DOI: 10.1016/J.Jcrysgro.2015.11.007 |
0.421 |
|
| 2016 |
El-Huni W, Migan A, Djebbour Z, Salvestrini J, Ougazzaden A. High‐efficiency indium gallium nitride/Si tandem photovoltaic solar cells modeling using indium gallium nitride semibulk material: monolithic integration versus 4‐terminal tandem cells Progress in Photovoltaics. 24: 1436-1447. DOI: 10.1002/Pip.2807 |
0.313 |
|
| 2015 |
Li X, Sundaram S, Disseix P, Le Gac G, Bouchoule S, Patriarche G, Réveret F, Leymarie J, El Gmili Y, Moudakir T, Genty F, Salvestrini JP, Dupuis RD, Voss PL, Ougazzaden A. AlGaN-based MQWs grown on a thick relaxed AlGaN buffer on AlN templates emitting at 285 nm Optical Materials Express. 5: 380-392. DOI: 10.1364/Ome.5.000380 |
0.424 |
|
| 2015 |
Rogers DJ, Sundaram S, El Gmili Y, Teherani FH, Bove P, Sandana V, Voss PL, Ougazzaden A, Rajan A, Prior KA, McClintock R, Razeghi M. Scale-up of the chemical lift-off of (In)GaN-based p-i-n junctions from sapphire substrates using sacrificial ZnO template layers Proceedings of Spie - the International Society For Optical Engineering. 9364. DOI: 10.1117/12.2175897 |
0.453 |
|
| 2015 |
Puybaret R, Hankinson J, Palmer J, Bouvier C, Ougazzaden A, Voss PL, Berger C, De Heer WA. Scalable control of graphene growth on 4H-SiC C-face using decomposing silicon nitride masks Journal of Physics D: Applied Physics. 48. DOI: 10.1088/0022-3727/48/15/152001 |
0.328 |
|
| 2015 |
Sundaram S, El Gmili Y, Puybaret R, Li X, Bonanno PL, Pantzas K, Patriarche G, Voss PL, Salvestrini JP, Ougazzaden A. Nanoselective area growth and characterization of dislocation-free InGaN nanopyramids on AlN buffered Si(111) templates Applied Physics Letters. 107. DOI: 10.1063/1.4931132 |
0.424 |
|
| 2015 |
Munson CE, Arif M, Streque J, Belahsene S, Martinez A, Ramdane A, El Gmili Y, Salvestrini JP, Voss PL, Ougazzaden A. Model of Ni-63 battery with realistic PIN structure Journal of Applied Physics. 118. DOI: 10.1063/1.4930870 |
0.343 |
|
| 2015 |
Bishop C, Salvestrini JP, Halfaya Y, Sundaram S, El Gmili Y, Pradere L, Marteau JY, Assouar MB, Voss PL, Ougazzaden A. Highly sensitive detection of NO2 gas using BGaN/GaN superlattice-based double Schottky junction sensors Applied Physics Letters. 106: 1DUMMUY. DOI: 10.1063/1.4922803 |
0.346 |
|
| 2015 |
Pantzas K, Patriarche G, Troadec D, Kociak M, Cherkashin N, Hÿtch M, Barjon J, Tanguy C, Rivera T, Suresh S, Ougazzaden A. Role of compositional fluctuations and their suppression on the strain and luminescence of InGaN alloys Journal of Applied Physics. 117: 55705. DOI: 10.1063/1.4907210 |
0.383 |
|
| 2015 |
Li X, Le Gac G, Bouchoule S, El Gmili Y, Patriarche G, Sundaram S, Disseix P, Réveret F, Leymarie J, Streque J, Genty F, Salvestrini JP, Dupuis RD, Li XH, Voss PL, ... Ougazzaden A, et al. Structural and optical investigations of AlGaN MQWs grown on a relaxed AlGaN buffer on AlN templates for emission at 280 nm Journal of Crystal Growth. 432: 37-44. DOI: 10.1016/J.Jcrysgro.2015.09.013 |
0.393 |
|
| 2015 |
Li X, Sundaram S, El Gmili Y, Genty F, Bouchoule S, Patriache G, Disseix P, Réveret F, Leymarie J, Salvestrini JP, Dupuis RD, Voss PL, Ougazzaden A. MOVPE grown periodic AlN/BAlN heterostructure with high boron content Journal of Crystal Growth. 414: 119-122. DOI: 10.1016/J.Jcrysgro.2014.09.030 |
0.376 |
|
| 2015 |
Sundaram S, Puybaret R, Li X, El Gmili Y, Streque J, Panztas K, Orsal G, Patriarche G, Voss PL, Salvestrini JP, Ougazzaden A. High quality thick InGaN nanostructures grown by nanoselective area growth for new generation photovoltaic devices Physica Status Solidi (a) Applications and Materials Science. 212: 740-744. DOI: 10.1002/Pssa.201400278 |
0.403 |
|
| 2015 |
Li X, Sundaram S, Gmili YE, Moudakir T, Genty F, Bouchoule S, Patriarche G, Dupuis RD, Voss PL, Salvestrini JP, Ougazzaden A. BAlN thin layers for deep UV applications Physica Status Solidi (a) Applications and Materials Science. 212: 745-750. DOI: 10.1002/Pssa.201400199 |
0.415 |
|
| 2014 |
Orsal G, Gmili YE, Fressengeas N, Streque J, Djerboub R, Moudakir T, Sundaram S, Ougazzaden A, Salvestrini JP. Bandgap energy bowing parameter of strained and relaxed InGaN layers Optical Materials Express. 4: 1030-1041. DOI: 10.1364/Ome.4.001030 |
0.334 |
|
| 2014 |
Rajan A, Sundaram S, El Gmili Y, Voss PL, Pantzas K, Moudakir T, Ougazzaden A, Rogers DJ, Hosseini Teherani F, Sandana VE, Bove P, Prior K, McClintock R, Razeghi M. Novel method for reclaim/reuse of bulk GaN substrates using sacrificial ZnO release layers Proceedings of Spie - the International Society For Optical Engineering. 8987. DOI: 10.1117/12.2043704 |
0.432 |
|
| 2014 |
Sundaram S, Puybaret R, Gmili YE, Li X, Bonanno PL, Pantzas K, Orsal G, Troadec D, Cai Z-, Patriarche G, Voss PL, Salvestrini JP, Ougazzaden A. Nanoscale selective area growth of thick, dense, uniform, In-rich, InGaN nanostructure arrays on GaN/sapphire template Journal of Applied Physics. 116: 163105. DOI: 10.1063/1.4900531 |
0.425 |
|
| 2014 |
Soltani A, Rousseau M, Gerbedoen JC, Mattalah M, Bonanno PL, Telia A, Bourzgui N, Patriarche G, Ougazzaden A, Benmoussa A. High performance TiN gate contact on AlGaN/GaN transistor using a mechanically strain induced P-doping Applied Physics Letters. 104. DOI: 10.1063/1.4882415 |
0.405 |
|
| 2014 |
Rogers DJ, Sandana VE, Gautier S, Moudakir T, Abid M, Ougazzaden A, Teherani FH, Bove P, Molinari M, Troyon M, Peres M, Soares MJ, Neves AJ, Monteiro T, McGrouther D, et al. Core-shell GaN-ZnO moth-eye nanostructure arrays grown on a-SiO2/Si (111) as a basis for improved InGaN-based photovoltaics and LEDs Photonics and Nanostructures - Fundamentals and Applications. DOI: 10.1016/J.Photonics.2015.03.003 |
0.433 |
|
| 2013 |
Gmili YE, Orsal G, Pantzas K, Ahaitouf A, Moudakir T, Gautier S, Patriarche G, Troadec D, Salvestrini JP, Ougazzaden A. Characteristics of the surface microstructures in thick InGaN layers on GaN Optical Materials Express. 3: 1111-1118. DOI: 10.1364/Ome.3.001111 |
0.354 |
|
| 2013 |
Rogers DJ, Bove P, Teherani FH, Pantzas K, Moudakir T, Orsal G, Patriarche G, Gautier S, Ougazzaden A, Sandana VE, McClintock R, Razeghi M. Comparison of chemical and laser lift-off for the transfer of InGaN-based p-i-n junctions from sapphire to glass substrates Proceedings of Spie - the International Society For Optical Engineering. 8626. DOI: 10.1117/12.2010046 |
0.395 |
|
| 2013 |
Dickerson JR, Pantzas K, Ougazzaden A, Voss PL. Polarization-Induced Electric Fields Make Robust n-GaN/i-InGaN/p-GaN Solar Cells Ieee Electron Device Letters. 34: 363-365. DOI: 10.1109/Led.2012.2237376 |
0.388 |
|
| 2013 |
Moudakir T, Genty F, Kunzer M, Borner P, Passow T, Suresh S, Patriarche G, Kohler K, Pletschen W, Wagner J, Ougazzaden A. Design, Fabrication, and Characterization of Near-Milliwatt-Power RCLEDs Emitting at 390 nm Ieee Photonics Journal. 5: 8400709-8400709. DOI: 10.1109/Jphot.2013.2287558 |
0.446 |
|
| 2013 |
Bonanno PL, Gautier S, Gmili YE, Moudakir T, Sirenko AA, Kazimirov A, Cai ZH, Martin J, Goh WH, Martinez A, Ramdane A, Le Gratiet L, Maloufi N, Assouar MB, Ougazzaden A. Nondestructive mapping of chemical composition and structural qualities of group III-nitride nanowires using submicron beam synchrotron-based X-ray diffraction Thin Solid Films. 541: 46-50. DOI: 10.1016/J.Tsf.2012.12.099 |
0.325 |
|
| 2013 |
Gorge V, Migan-Dubois A, Djebbour Z, Pantzas K, Gautier S, Moudakir T, Suresh S, Ougazzaden A. Theoretical analysis of the influence of defect parameters on photovoltaic performances of composition graded InGaN solar cells Materials Science and Engineering B-Advanced Functional Solid-State Materials. 178: 142-148. DOI: 10.1016/J.Mseb.2012.10.033 |
0.349 |
|
| 2013 |
Moudakir T, Gautier S, Suresh S, Abid M, Gmili YE, Patriarche G, Pantzas K, Troadec D, Jacquet J, Genty F, Voss PL, Ougazzaden A. Suppression of crack generation in AlGaN/GaN distributed Bragg reflectors grown by MOVPE Journal of Crystal Growth. 370: 12-15. DOI: 10.1016/J.Jcrysgro.2012.09.061 |
0.362 |
|
| 2013 |
Gautier S, Moudakir T, Patriarche G, Rogers DJ, Sandana VE, Téherani FH, Bove P, El Gmili Y, Pantzas K, Sundaram S, Troadec D, Voss PL, Razeghi M, Ougazzaden A. Structural and compositional characterization of MOVPE GaN thin films transferred from sapphire to glass substrates using chemical lift-off and room temperature direct wafer bonding and GaN wafer scale MOVPE growth on ZnO-buffered sapphire Journal of Crystal Growth. 370: 63-67. DOI: 10.1016/J.Jcrysgro.2012.08.048 |
0.406 |
|
| 2013 |
Pantzas K, Gmili YE, Dickerson J, Gautier S, Largeau L, Mauguin O, Patriarche G, Suresh S, Moudakir T, Bishop C, Ahaitouf A, Rivera T, Tanguy C, Voss PL, Ougazzaden A. Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE Journal of Crystal Growth. 370: 57-62. DOI: 10.1016/J.Jcrysgro.2012.08.041 |
0.42 |
|
| 2013 |
Gmili YE, Orsal G, Pantzas K, Moudakir T, Sundaram S, Patriarche G, Hester J, Ahaitouf A, Salvestrini JP, Ougazzaden A. Multilayered InGaN/GaN structure vs. single InGaN layer for solar cell applications: A comparative study Acta Materialia. 61: 6587-6596. DOI: 10.1016/J.Actamat.2013.07.041 |
0.435 |
|
| 2013 |
Dickerson J, Pantzas K, Moudakir T, Ougazzaden A, Voss PL. Modeling of polarization effects on n-GaN/i-InGaN/p-Gan solar cells with ultrathin GaN interlayers Optical and Quantum Electronics. 45: 681-686. DOI: 10.1007/S11082-013-9665-5 |
0.362 |
|
| 2013 |
Sandana VE, Rogers DJ, Teherani FH, Bove P, Molinari M, Troyon M, Largeteau A, Demazeau G, Scott C, Orsal G, Drouhin HJ, Ougazzaden A, Razeghi M. Growth of "moth-eye" ZnO nanostructures on Si(111), c-Al2O3, ZnO and steel substrates by pulsed laser deposition Physica Status Solidi (C) Current Topics in Solid State Physics. 10: 1317-1321. DOI: 10.1002/Pssc.201200975 |
0.384 |
|
| 2012 |
Pantzas K, Patriarche G, Troadec D, Gautier S, Moudakir T, Suresh S, Largeau L, Mauguin O, Voss PL, Ougazzaden A. Nanometer-scale, quantitative composition mappings of InGaN layers from a combination of scanning transmission electron microscopy and energy dispersive x-ray spectroscopy. Nanotechnology. 23: 455707. PMID 23089619 DOI: 10.1088/0957-4484/23/45/455707 |
0.312 |
|
| 2012 |
Rogers DJ, Ougazzaden A, Sandana VE, Moudakir T, Ahaitouf A, Teherani FH, Gautier S, Goubert L, Davidson IA, Prior KA, McClintock RP, Bove P, Drouhin HJ, Razeghi M. Novel process for direct bonding of GaN onto glass substrates using sacrificial ZnO template layers to chemically lift-off GaN from c-sapphire Proceedings of Spie - the International Society For Optical Engineering. 8263. DOI: 10.1117/12.916013 |
0.401 |
|
| 2012 |
Salvestrini JP, Ahaitouf A, Srour H, Gautier S, Moudakir T, Assouar B, Ougazzaden A. Tuning of internal gain, dark current and cutoff wavelength of UV photodetectors using quasi-alloy of BGaN-GaN and BGaN-AlN superlattices Proceedings of Spie. 8268. DOI: 10.1117/12.914800 |
0.417 |
|
| 2012 |
Ravindran V, Boucherit M, Soltani A, Gautier S, Moudakir T, Dickerson J, Voss PL, Di Forte-Poisson MA, De Jaeger JC, Ougazzaden A. Dual-purpose BGaN layers on performance of nitride-based high electron mobility transistors Applied Physics Letters. 100. DOI: 10.1063/1.4729154 |
0.381 |
|
| 2012 |
Abid M, Moudakir T, Orsal G, Gautier S, En Naciri A, Djebbour Z, Ryou JH, Patriarche G, Largeau L, Kim HJ, Lochner Z, Pantzas K, Alamarguy D, Jomard F, Dupuis RD, ... ... Ougazzaden A, et al. Distributed Bragg reflectors based on diluted boron-based BAlN alloys for deep ultraviolet optoelectronic applications Applied Physics Letters. 100. DOI: 10.1063/1.3679703 |
0.387 |
|
| 2012 |
Dickerson JR, Ravindran V, Moudakir T, Gautier S, Voss PL, Ougazzaden A. A study of BGaN back-barriers for AlGaN/GaN HEMTs Epj Applied Physics. 60. DOI: 10.1051/Epjap/2012120265 |
0.342 |
|
| 2012 |
Ahaitouf A, Srour H, Hamady SOS, Fressengeas N, Ougazzaden A, Salvestrini JP. Interface state effects in GaN Schottky diodes Thin Solid Films. 522: 345-351. DOI: 10.1016/J.Tsf.2012.08.029 |
0.308 |
|
| 2012 |
Pantzas K, Patriarche G, Orsal G, Gautier S, Moudakir T, Abid M, Gorge V, Djebbour Z, Voss PL, Ougazzaden A. Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials Physica Status Solidi (a). 209: 25-28. DOI: 10.1002/Pssa.201100154 |
0.367 |
|
| 2011 |
Gautier S, Abid M, Moudakir T, Orsal G, En Naciri A, Pantzas K, Jomard F, Voss PL, Rogers DJ, Teherani FH, Ougazzaden A. Application of dilute boron B(Al,In,Ga)N alloys for UV light sources Proceedings of Spie - the International Society For Optical Engineering. 7940. DOI: 10.1117/12.884524 |
0.39 |
|
| 2011 |
Srour H, Salvestrini J, Ahaitouf A, Gautier S, Moudakir T, Assouar B, Abarkan M, Hamady SOS, Ougazzaden A. Solar blind metal-semiconductor-metal ultraviolet photodetectors using quasi-alloy of BGaN/GaN superlattices Applied Physics Letters. 99: 221101. DOI: 10.1063/1.3662974 |
0.375 |
|
| 2011 |
Gorge V, Djebbour Z, Migan-Dubois A, Pareige C, Longeaud C, Pantzas K, Moudakir T, Gautier S, Orsal G, Voss PL, Ougazzaden A. Link between crystal quality and electrical properties of metalorganic vapour phase epitaxy InxGa1−xN thin films Applied Physics Letters. 99: 62113. DOI: 10.1063/1.3624598 |
0.319 |
|
| 2011 |
Abid M, Moudakir T, Djebbour Z, Orsal G, Gautier S, Naciri AE, Migan-Dubois A, Ougazzaden A. Blue–violet boron-based Distributed Bragg Reflectors for VCSEL application Journal of Crystal Growth. 315: 283-287. DOI: 10.1016/J.Jcrysgro.2010.09.008 |
0.433 |
|
| 2011 |
Goh WH, Patriarche G, Bonanno PL, Gautier S, Moudakir T, Abid M, Orsal G, Sirenko AA, Cai Z-, Martinez A, Ramdane A, Gratiet LL, Troadec D, Soltani A, Ougazzaden A. Structural and optical properties of nanodots, nanowires, and multi-quantum wells of III-nitride grown by MOVPE nano-selective area growth Journal of Crystal Growth. 315: 160-163. DOI: 10.1016/J.Jcrysgro.2010.08.053 |
0.41 |
|
| 2011 |
Gautier S, Patriarche G, Moudakir T, Abid M, Orsal G, Pantzas K, Troadec D, Soltani A, Largeau L, Mauguin O, Ougazzaden A. Deep structural analysis of novel BGaN material layers grown by MOVPE Journal of Crystal Growth. 315: 288-291. DOI: 10.1016/J.Jcrysgro.2010.08.042 |
0.347 |
|
| 2010 |
Barkad HA, Soltani A, Mattalah M, Gerbedoen JC, Rousseau M, De Jaeger JC, BenMoussa A, Mortet V, Haenen K, Benbakhti B, Moreau M, Dupuis R, Ougazzaden A. Design, fabrication and physical analysis of TiN/AlN deep UV photodiodes Journal of Physics D: Applied Physics. 43. DOI: 10.1088/0022-3727/43/46/465104 |
0.389 |
|
| 2010 |
Bonanno PL, Gautier S, Sirenko AA, Kazimirov A, Cai Z-, Goh WH, Martin J, Martinez A, Moudakir T, Maloufi N, Assouar MB, Ramdane A, Gratiet LL, Ougazzaden A. Submicron beam X-ray diffraction of nanoheteroepitaxily grown GaN: Experimental challenges and calibration procedures Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 268: 320-324. DOI: 10.1016/J.Nimb.2009.09.016 |
0.32 |
|
| 2010 |
Gautier S, Orsal G, Moudakir T, Maloufi N, Jomard F, Alnot M, Djebbour Z, Sirenko AA, Abid M, Pantzas K, Ferguson IT, Voss PL, Ougazzaden A. Metal-organic vapour phase epitaxy of BInGaN quaternary alloys and characterization of boron content Journal of Crystal Growth. 312: 641-644. DOI: 10.1016/J.Jcrysgro.2009.11.040 |
0.386 |
|
| 2009 |
Rogers DJ, Teherani FH, Moudakir T, Gautier S, Jomard F, Molinari M, Troyon M, McGrouther D, Chapman JN, Razeghi M, Ougazzaden A. Microstructural compositional, and optical characterization of GaN grown by metal organic vapor phase epitaxy on ZnO epilayers Journal of Vacuum Science & Technology B. 27: 1655-1657. DOI: 10.1116/1.3137967 |
0.427 |
|
| 2009 |
Baghdadli T, Hamady SOS, Gautier S, Moudakir T, Benyoucef B, Ougazzaden A. Electrical and structural characterizations of BGaN thin films grown by metal‐organic vapor‐phase epitaxy Physica Status Solidi (C). 6. DOI: 10.1002/Pssc.200880896 |
0.357 |
|
| 2009 |
Goh WH, Martin J, Ould-Saad S, Gautier S, Sirenko AA, Martinez A, Gratiet LL, Ramdane A, Maloufi N, Ougazzaden A. Selective growth of GaN nanodots and nanostripes on 6H‐SiC substrates by metal organic vapor phase epitaxy Physica Status Solidi (C). 6. DOI: 10.1002/Pssc.200880770 |
0.397 |
|
| 2008 |
Ougazzaden A, Gautier S, Moudakir T, Djebbour Z, Lochner Z, Choi S, Kim HJ, Ryou JH, Dupuis RD, Sirenko AA. Bandgap bowing in BGaN thin films Applied Physics Letters. 93. DOI: 10.1063/1.2977588 |
0.362 |
|
| 2008 |
Moudakir T, Orsal G, Maloufi N, Sirenko AA, Gautier S, Bouchaour M, Saad SO, Salvestrini JP, Ougazzaden A. Structural and morphological studies of GaN thin films grown on different oriented LiNbO3 substrates by MOVPE European Physical Journal-Applied Physics. 43: 295-299. DOI: 10.1051/Epjap:2008144 |
0.419 |
|
| 2008 |
Martin J, Martinez A, Goh WH, Gautier S, Dupuis N, Le Gratiet L, Decobert J, Ramdane A, Maloufi N, Ougazzaden A. New approach of Nano-Selective Area Growth (NSAG) for a precise control of GaN nanodots grown by MOVPE Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 147: 114-117. DOI: 10.1016/J.Mseb.2007.08.007 |
0.41 |
|
| 2008 |
Gautier S, Aggerstam T, Pinos A, Marcinkevičius S, Liu K, Shur M, O’Malley SM, Sirenko AA, Djebbour Z, Migan-Dubois A, Moudakir T, Ougazzaden A. AlGaN/AlN multiple quantum wells grown by MOVPE on AlN templates using nitrogen as a carrier gas Journal of Crystal Growth. 310: 4927-4931. DOI: 10.1016/J.Jcrysgro.2008.08.040 |
0.352 |
|
| 2008 |
Orsal G, Maloufi N, Gautier S, Alnot M, Sirenko AA, Bouchaour M, Ougazzaden A. Effect of boron incorporation on growth behavior of BGaN/GaN by MOVPE Journal of Crystal Growth. 310: 5058-5062. DOI: 10.1016/J.Jcrysgro.2008.08.024 |
0.337 |
|
| 2008 |
Zaidi T, Fenwick WE, Melton A, Li N, Gupta S, Yu H, Ougazzaden A, Ferguson I. Effects of N doping on ZnO thin films grown by MOVPE Journal of Crystal Growth. 310: 5011-5015. DOI: 10.1016/J.Jcrysgro.2008.07.124 |
0.327 |
|
| 2008 |
Gupta S, Fenwick WE, Melton A, Zaidi T, Yu H, Rengarajan V, Nause J, Ougazzaden A, Ferguson IT. MOVPE growth of transition-metal-doped GaN and ZnO for spintronic applications Journal of Crystal Growth. 310: 5032-5038. DOI: 10.1016/J.Jcrysgro.2008.07.046 |
0.333 |
|
| 2008 |
Ould Saad Hamady S, Dupuis N, Décobert J, Ougazzaden A. Micro-Raman for compositions characterization of selective area growth of AlxGayIn1-x- yAs materials by metal-organic vapor-phase epitaxy Journal of Crystal Growth. 310: 4741-4746. DOI: 10.1016/J.Jcrysgro.2008.06.080 |
0.331 |
|
| 2008 |
Ougazzaden A, Rogers DJ, Teherani FH, Moudakir T, Gautier S, Aggerstam T, Saad SO, Martin J, Djebbour Z, Durand O, Garry G, Lusson A, McGrouther D, Chapman JN. Growth of GaN by metal organic vapor phase epitaxy on ZnO-buffered c-sapphire substrates Journal of Crystal Growth. 310: 944-947. DOI: 10.1016/J.Jcrysgro.2007.11.137 |
0.439 |
|
| 2008 |
Hamady SOS, Baghdadli T, Gautier S, Bouchaour M, Martin J, Ougazzaden A. Raman scattering study of BxGa1―xN growth on AlN template substrate Physica Status Solidi (C). 5: 3051-3053. DOI: 10.1002/Pssc.200779186 |
0.34 |
|
| 2008 |
Ougazzaden A, Moudakir T, Aggerstam T, Orsal G, Salvestrini JP, Gautier S, Sirenko AA. GaN thin films on z‐ and x ‐cut LiNbO3 substrates by MOVPE Physica Status Solidi (C). 5: 1565-1567. DOI: 10.1002/Pssc.200778490 |
0.359 |
|
| 2007 |
Rogers DJ, Teherani FH, Ougazzaden A, Gautier S, Divay L, Lusson A, Durand O, Wyczisk F, Garry G, Monteiro T, Correira MR, Peres M, Neves A, McGrouther D, Chapman JN, et al. Use of ZnO thin films as sacrificial templates for metal organic vapor phase epitaxy and chemical lift-off of GaN Applied Physics Letters. 91: 71120-71120. DOI: 10.1063/1.2770655 |
0.41 |
|
| 2007 |
Ougazzaden A, Gautier S, Sartel C, Maloufi N, Martin J, Jomard F. BGaN materials on GaN/sapphire substrate by MOVPE using N2 carrier gas Journal of Crystal Growth. 298: 316-319. DOI: 10.1016/J.Jcrysgro.2006.10.072 |
0.408 |
|
| 2007 |
Gautier S, Sartel C, Ould-Saad S, Martin J, Sirenko A, Ougazzaden A. GaN materials growth by MOVPE in a new-design reactor using DMHy and NH3 Journal of Crystal Growth. 298: 428-432. DOI: 10.1016/J.Jcrysgro.2006.10.064 |
0.379 |
|
| 2007 |
Décobert J, Dupuis N, Lagrée PY, Lagay N, Ramdane A, Ougazzaden A, Poingt F, Cuisin C, Kazmierski C. Modeling and characterization of AlGaInAs and related materials using selective area growth by metal-organic vapor-phase epitaxy Journal of Crystal Growth. 298: 28-31. DOI: 10.1016/J.Jcrysgro.2006.10.005 |
0.397 |
|
| 2006 |
Sartel C, Gautier S, Hamady SOS, Maloufi N, Martin J, Sirenko A, Ougazzaden A. Low temperature homoepitaxy of GaN by LP-MOVPE using Dimethylhydrazine and nitrogen Superlattices and Microstructures. 40: 476-482. DOI: 10.1016/J.Spmi.2006.09.026 |
0.359 |
|
| 2006 |
Gautier S, Sartel C, Hamady SOS, Maloufi N, Martin J, Jomard F, Ougazzaden A. MOVPE Growth Study of BxGa(1-x)N on GaN Template Substrate Superlattices and Microstructures. 40: 233-238. DOI: 10.1016/J.Spmi.2006.09.021 |
0.417 |
|
| 2005 |
Sirenko AA, Kazimirov A, Huang R, Bilderback DH, O’Malley S, Gupta V, Bacher K, Ketelsen LJP, Ougazzaden A. Microbeam high-resolution x-ray diffraction in strained InGaAlAs-based multiple quantum well laser structures grown selectively on masked InP substrates Journal of Applied Physics. 97: 063512. DOI: 10.1063/1.1862769 |
0.418 |
|
| 2002 |
Mason B, Ougazzaden A, Lentz CW, Glogovsky KG, Reynolds CL, Przybylek GJ, Leibenguth RE, Kercher TL, Boardman JW, Rader MT, Geary JM, Walters FS, Peticolas LJ, Freund JM, Chu SNG, et al. 40-Gb/s tandem electroabsorption modulator Ieee Photonics Technology Letters. 14: 27-29. DOI: 10.1109/68.974150 |
0.309 |
|
| 2000 |
Talneau A, Slempkes S, Ougazzaden A. Accuracy on emitted wavelengths in DFB laser arrays resulting from the longitudinal mode selection mechanism Ieee Journal of Selected Topics in Quantum Electronics. 6: 191-196. DOI: 10.1109/2944.826888 |
0.322 |
|
| 1999 |
Dumont H, Auvray L, Dazord J, Monteil Y, Bouix J, Ougazzaden A. Growth mode and effect of carrier gas on In0.53Ga0.47As/InP surface morphology grown with trimethylarsine and arsine Applied Surface Science. 150: 161-170. DOI: 10.1016/S0169-4332(99)00241-X |
0.364 |
|
| 1997 |
Debaisieux G, Guemmouri M, Chelles S, Ougazzaden A, Herve-Gruyer G, Filoche M, Martin J-. Gain modeling of strained InGaAsP based MQW optical amplifiers Ieee Photonics Technology Letters. 9: 1475-1477. DOI: 10.1109/68.634713 |
0.308 |
|
| 1997 |
Talneau A, Slempkes S, Ougazzaden A. Constant output power and low linewidth in a simple wide-tuning DFB laser with multiwavelength grating Ieee Journal of Selected Topics in Quantum Electronics. 3: 628-631. DOI: 10.1109/2944.605714 |
0.339 |
|
| 1997 |
Delorme F, Alibert G, Boulet P, Grosmaire S, Slempkes S, Ougazzaden A. High reliability of high-power and widely tunable 1.55-μm distributed Bragg reflector lasers for WDM applications Ieee Journal of Selected Topics in Quantum Electronics. 3: 607-614. DOI: 10.1109/2944.605712 |
0.348 |
|
| 1997 |
Alibert G, Delorme F, Grosmaire S, Slempkes S, Ougazzaden A, Nakajima H. A new tunable laser using a single electroabsorption tuning super structure grating for subnanosecond switching applications Ieee Journal of Selected Topics in Quantum Electronics. 3: 598-606. DOI: 10.1109/2944.605711 |
0.368 |
|
| 1997 |
Bouchoule S, Kazmierski C, Mathoorasing D, Ougazzaden A, Marzin J-. Barrier strain influence on the high-speed properties of compressively strained InGaAsP multiquantum-well laser structures Ieee Journal of Selected Topics in Quantum Electronics. 3: 330-335. DOI: 10.1109/2944.605675 |
0.329 |
|
| 1997 |
Ougazzaden A, Bellego YL, Rao EVK, Juhel M, Leprince L, Patriarche G. Metal organic vapor phase epitaxy growth of GaAsN on GaAs using dimethylhydrazine and tertiarybutylarsine Applied Physics Letters. 70: 2861-2863. DOI: 10.1063/1.119025 |
0.419 |
|
| 1996 |
Delorme F, Grosmaire S, Alibert G, Slempkes S, Ougazzaden A. Simple multiwavelength device fabrication technique using a single-grating holographic exposure Ieee Photonics Technology Letters. 8: 867-869. DOI: 10.1109/68.502253 |
0.364 |
|
| 1996 |
Ramdane A, Devaux F, Souli N, Delprat D, Ougazzaden A. Monolithic integration of multiple-quantum-well lasers and modulators for high-speed transmission Ieee Journal of Selected Topics in Quantum Electronics. 2: 326-335. DOI: 10.1109/2944.577388 |
0.331 |
|
| 1996 |
Delprat D, Ramdane A, Ougazzaden A, Carre M. Very simple approach for high performance tunable laser realisation Electronics Letters. 32: 2079-2080. DOI: 10.1049/El:19961397 |
0.327 |
|
| 1996 |
Talneau A, Charil J, Ougazzaden A. Superimposed Bragg gratings on semiconductor material Electronics Letters. 32: 1884-1885. DOI: 10.1049/El:19961269 |
0.326 |
|
| 1996 |
Bouadma N, Ougazzaden A, Kamoun M, Kazmierski C, Silvestre L. 1.3 /spl mu/m InGaP/InAsP MQW lasers with large spot-size and low loss fibre chip coupling fabricated by a standard buried heterostructure process Electronics Letters. 32: 1582-1583. DOI: 10.1049/El:19961086 |
0.347 |
|
| 1995 |
Talneau A, Chandouineau JP, Charil J, Ougazzaden A. Suppression of fringe diffraction in localized holographic exposure for DFB laser arrays Ieee Photonics Technology Letters. 7: 721-723. DOI: 10.1109/68.393185 |
0.313 |
|
| 1995 |
Souli N, Devaux F, Ramdane A, Krauz P, Ougazzaden A, Huet F, Carre M, Sorel Y, Kerdiles JF, Henry M, Aubin G, Jeanney E, Montallant T, Moulu J, Nortier B, et al. 20 Gbit/s high-performance integrated MQW TANDEM modulators and amplifier for soliton generation and coding Ieee Photonics Technology Letters. 7: 629-631. DOI: 10.1109/68.388746 |
0.316 |
|
| 1995 |
Allovon M, Fouchet S, Harmand J-, Ougazzaden A, Rose B, Gloukhian A, Devaux F. Monolithic integration on InP of a Wannier Stark modulator with a strained MQW DFB 1.55-μm laser Ieee Photonics Technology Letters. 7: 185-187. DOI: 10.1109/68.345917 |
0.375 |
|
| 1995 |
Kazmierski C, Robein D, Mathoorasing D, Ougazzaden A, Filoche M. 1.5-μm DFB lasers with new current-induced gain gratings Ieee Journal of Selected Topics in Quantum Electronics. 1: 371-374. DOI: 10.1109/2944.401217 |
0.325 |
|
| 1995 |
Devaux F, Chelles S, Ougazzaden A, Mircea A, Harmand JC. Electroabsorption modulators for high-bit-rate optical communications: a comparison of strained InGaAs/InAIAs and InGaAsP/InGaAsP MQW Semiconductor Science and Technology. 10: 887-901. DOI: 10.1088/0268-1242/10/7/001 |
0.323 |
|
| 1995 |
Barrau J, Issanchou O, Brousseau M, Mircea A, Ougazzaden A. Optical gain evaluation in GaInAsP quantum‐well lasers: A comparison of the different growth techniques Journal of Applied Physics. 77: 821-826. DOI: 10.1063/1.359005 |
0.318 |
|
| 1995 |
Ougazzaden A, Sigogne D, Mircea A, Rao EVK, Ramdane A, Silvestre L. Atmospheric pressure MOVPE growth of high performance polarisation insensitive strain compensated MQW InGaAsP/InGaAs optical amplifier Electronics Letters. 31: 1242-1244. DOI: 10.1049/El:19950827 |
0.368 |
|
| 1994 |
Ponchet A, Rocher A, Ougazzaden A, Mircea A. Self‐induced laterally modulated GaInP/InAsP structure grown by metal‐organic vapor‐phase epitaxy Journal of Applied Physics. 75: 7881-7883. DOI: 10.1063/1.356573 |
0.37 |
|
| 1994 |
Ramdane A, Ougazzaden A, Devaux F, Delorme F, Schneider M, Landreau J. Very simple approach for high performance DFB laser-electroabsorption modulator monolithic integration Electronics Letters. 30: 1980-1981. DOI: 10.1049/El:19941324 |
0.341 |
|
| 1994 |
Souli N, Devaux F, Ramdane A, Krauz P, Ougazzaden A, Huet F, Carre M. 10 Gbit/s high performance MQW tandem modulator for soliton generation and coding Electronics Letters. 30: 1706-1707. DOI: 10.1049/El:19941132 |
0.321 |
|
| 1994 |
Devaux F, Bordes P, Ougazzaden A, Carre M, Huet F. Experimental optimisation of MQW electroabsorption modulators with up to 40 GHz bandwidths Electronics Letters. 30: 1347-1348. DOI: 10.1049/El:19940849 |
0.314 |
|
| 1994 |
Mircea A, Ougazzaden A, Bouadma N, Devaux F, Marzin J-, Ramdane A, Barrau J, Ponchet A. Strained multi-quantum well heterostructures for lasers, modulators and integrated optical devices at 1.3–1.55 μm Materials Science and Engineering B-Advanced Functional Solid-State Materials. 28: 279-284. DOI: 10.1016/0921-5107(94)90064-7 |
0.364 |
|
| 1993 |
Devaux F, Dorgeuille F, Ougazzaden A, Huet F, Carre M, Carenco A, Henry M, Sorel Y, Kerdiles J-, Jeanney E. 20 Gbit/s operation of a high-efficiency InGaAsP/InGaAsP MQW electroabsorption modulator with 1.2-V drive voltage Ieee Photonics Technology Letters. 5: 1288-1290. DOI: 10.1109/68.250046 |
0.313 |
|
| 1993 |
Soulière V, Abraham P, Sacilotti M, Berthet MP, Bouix J, Monteil Y, Pougnet AM, Mellet R, Ougazzaden A, Mircéa A. A new organoindium precursor for electronic materials Materials Science and Engineering B-Advanced Functional Solid-State Materials. 17: 34-40. DOI: 10.1016/0921-5107(93)90078-2 |
0.324 |
|
| 1992 |
Devaux F, Bigan E, Ougazzaden A, Pierre B, Huet F, Carre M, Carenco A. Ingaasp/ingaasp multiple-quantum-well modulator with improved saturation intensity and bandwidth over 20 ghz Ieee Photonics Technology Letters. 4: 720-723. DOI: 10.1109/68.145250 |
0.342 |
|
| 1992 |
Devaux F, Bigan E, Ougazzaden A, Huet F, Carre M, Carenco A. High-speed InGaAsP/InGaAsP MQW electroabsorption modulator with high optical power handling capacity Electronics Letters. 28: 2157-2159. DOI: 10.1049/El:19921385 |
0.318 |
|
| 1992 |
Talneau A, Charil J, Ougazzaden A, Bouley JC. High power operation of phase-shifted DFB lasers with amplitude modulated coupling coefficient Electronics Letters. 28: 1395-1396. DOI: 10.1049/El:19920887 |
0.315 |
|
| 1992 |
Ougazzaden A, Mircea A, Mellet R, Primot G, Kazmierski C. 1.55 mu m multiquantum-well lasers with record performance obtained by atmospheric pressure MOVPE using organometallic phosphorus precursor Electronics Letters. 28: 1078-1080. DOI: 10.1049/El:19920682 |
0.327 |
|
| 1992 |
Mircea A, Ougazzaden A, Primot G, Kazmierski C. Highly thermally stable, high-performance InGaAsP: InGaAsP multi-quantum-well structures for optical devices by atmospheric pressure MOVPE Journal of Crystal Growth. 124: 737-740. DOI: 10.1016/0022-0248(92)90544-S |
0.37 |
|
| 1992 |
Soulière V, Abraham P, Bouix J, Berthet MP, Monteil Y, Pougnet AM, Mellet R, Ougazzaden A, Mircea A. Use of high purity trimethylindium-trimethylamine adduct in MOVPE of InP Journal of Crystal Growth. 124: 93-98. DOI: 10.1016/0022-0248(92)90443-M |
0.332 |
|
| 1991 |
Kazmierski C, Ougazzaden A, Blez M, Robein D, Landreau J, Sermage B, Bouley JC, Mircea A. High static performance GaInAs-GaInAsP SCH MQW 1.5 mu m wavelength buried ridge stripe lasers Ieee Journal of Quantum Electronics. 27: 1794-1797. DOI: 10.1109/3.90006 |
0.394 |
|
| 1991 |
Bigan E, Ougazzaden A, Huet F, Carre M, Carenco A, Mircea A. Efficient electroabsorption in InGaAsP/InGaAsP MQW optical waveguide Electronics Letters. 27: 1607-1609. DOI: 10.1049/El:19911006 |
0.324 |
|
| 1991 |
Ougazzaden A, Mellet R, Gao Y, Kazmierski C, Robein D, Mircea A. State of the art 1.3 mu m lasers by atmospheric pressure MOVPE using tertiary butylphosphine Electronics Letters. 27: 1005-1006. DOI: 10.1049/El:19910626 |
0.363 |
|
| 1991 |
Ougazzaden A, Mellet R, Mircéa A, Affonso A. Large-area metal-organic vapour phase epitaxy for optoelectronic integrated circuits and photonics Materials Science and Engineering B-Advanced Functional Solid-State Materials. 9: 69-76. DOI: 10.1016/0921-5107(91)90151-K |
0.355 |
|
| 1991 |
Ougazzaden A, Ganière J-, Gao Y, Rao EVK, Sermage B, Kazmierski C, Mircea A. Low threshold 1.5 μm SCH-MQW lasers by atmospheric pressure MOVPE and direct comparison of low versus atmospheric pressure MOVPE laser growths Journal of Crystal Growth. 107: 761-766. DOI: 10.1016/0022-0248(91)90554-I |
0.349 |
|
| 1990 |
Izrael A, Sermage B, Marzin JY, Ougazzaden A, Azoulay R, Etrillard J, Thierry‐Mieg V, Henry L. Microfabrication and optical study of reactive ion etched InGaAsP/InP and GaAs/GaAlAs quantum wires Applied Physics Letters. 56: 830-832. DOI: 10.1063/1.102676 |
0.36 |
|
| 1988 |
Mircea A, Ougazzaden A, Dasté P, Gao Y, Kazmierski C, Bouley J-, Carenco A. Extremely uniform, reproducible growth of device quality InGaAsP:InP heterostructures in the T-shaped reactor at atmospheric pressure Journal of Crystal Growth. 93: 235-241. DOI: 10.1016/0022-0248(88)90533-7 |
0.401 |
|
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