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Olga Kryliouk - Publications

Affiliations: 
University of Florida, Gainesville, Gainesville, FL, United States 
Area:
Chemical Engineering, Materials Science Engineering
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23 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2015 Zhang H, Jacopin G, Neplokh V, Largeau L, Julien FH, Kryliouk O, Tchernycheva M. Color control of nanowire InGaN/GaN light emitting diodes by post-growth treatment. Nanotechnology. 26: 465203. PMID 26508299 DOI: 10.1088/0957-4484/26/46/465203  0.35
2015 Tchernycheva M, Neplokh V, Zhang H, Lavenus P, Rigutti L, Bayle F, Julien FH, Babichev A, Jacopin G, Largeau L, Ciechonski R, Vescovi G, Kryliouk O. Core-shell InGaN/GaN nanowire light emitting diodes analyzed by electron beam induced current microscopy and cathodoluminescence mapping. Nanoscale. PMID 26100114 DOI: 10.1039/C5Nr00623F  0.323
2014 Tchernycheva M, Lavenus P, Zhang H, Babichev AV, Jacopin G, Shahmohammadi M, Julien FH, Ciechonski R, Vescovi G, Kryliouk O. InGaN/GaN Core–Shell Single Nanowire Light Emitting Diodes with Graphene-Based P-Contact Nano Letters. 14: 2456-2465. PMID 24742151 DOI: 10.1021/Nl5001295  0.33
2008 Won YS, Kim YS, Kryliouk O, Anderson TJ. Growth mechanism of catalyst- and template-free group III-nitride nanorods Journal of Crystal Growth. 310: 3735-3740. DOI: 10.1016/J.Jcrysgro.2008.05.045  0.444
2008 Liliental-Weber Z, Hawkridge M, Mangum J, Kryliouk O. InN nanorods and nanowires grown on different substrates Physica Status Solidi (C). 5: 1795-1798. DOI: 10.1002/Pssc.200778649  0.471
2008 Won YS, Kim YS, Kryliouk O, Anderson T. Growth mechanism of catalyst- and template-free InN nanorods Physica Status Solidi (C). 5: 1633-1638. DOI: 10.1002/Pssc.200778558  0.409
2007 Kryliouk O, Park HJ, Won YS, Anderson T, Davydov A, Levin I, Kim JH, Freitas JA. Controlled synthesis of single-crystalline InN nanorods Nanotechnology. 18: 135606. DOI: 10.1088/0957-4484/18/13/135606  0.471
2007 Kang SW, Park HJ, Won YS, Kryliouk O, Anderson T, Khokhlov D, Burbaev T. Prevention of In droplets formation by HCl addition during metal organic vapor phase epitaxy of InN Applied Physics Letters. 90: 161126. DOI: 10.1063/1.2730582  0.41
2007 Liliental-Weber Z, Park HJ, Mangum J, Anderson T, Kryliouk O. InN Nanorods Grown on Different Planes of Al2O3 Microscopy and Microanalysis. 13. DOI: 10.1017/S1431927607073771  0.441
2007 Park HJ, Kryliouk O, Anderson T, Khokhlov D, Burbaev T. Growth of InN films and nanorods by H-MOVPE Physica E-Low-Dimensional Systems & Nanostructures. 37: 142-147. DOI: 10.1016/J.Physe.2006.06.022  0.49
2007 Won YS, Varanasi VG, Kryliouk O, Anderson TJ, McElwee-White L, Perez RJ. Equilibrium analysis of zirconium carbide CVD growth Journal of Crystal Growth. 307: 302-308. DOI: 10.1016/J.Jcrysgro.2007.05.039  0.431
2007 Won YS, Kim YS, Varanasi VG, Kryliouk O, Anderson TJ, Sirimanne CT, McElwee-White L. Growth of ZrC thin films by aerosol-assisted MOCVD Journal of Crystal Growth. 304: 324-332. DOI: 10.1016/J.Jcrysgro.2006.12.071  0.433
2007 Liliental-Weber Z, Lu H, Schaff WJ, Kryliouk O, Park HJ, Mangum J, Anderson T. Comparison of structural perfection of InN layers and InN nanorods grown on the c- and r-planes of Al2O3 Physica Status Solidi (C). 4: 2469-2473. DOI: 10.1002/Pssc.200674907  0.424
2005 Park HJ, Kang SW, Kryliouk O, Anderson T. Morphological study of InN films and nanorods grown by H-MOVPE Mrs Proceedings. 892. DOI: 10.1557/Proc-0892-Ff11-09  0.493
2005 Kryliouk O, Park HJ, Wang HT, Kang BS, Anderson TJ, Ren F, Pearton SJ. Pt-coated InN nanorods for selective detection of hydrogen at room temperature Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 23: 1891. DOI: 10.1116/1.2008268  0.313
2005 Kang SW, Park HJ, Kim T, Dann T, Kryliouk O, Anderson T. The influence of interdiffusion on strain energy in the GaN–sapphire system Physica Status Solidi (C). 2: 2420-2423. DOI: 10.1002/Pssc.200461562  0.348
2005 Park HJ, Park C, Yeo S, Kang S, Mastro M, Kryliouk O, Anderson TJ. Epitaxial strain energy measurements of GaN on sapphire by Raman spectroscopy Physica Status Solidi (C). 2: 2446-2449. DOI: 10.1002/Pssc.200461513  0.362
2002 Mastro MA, Kryliouk O, Dann T, Anderson TJ, Nikolaev AE, Melnik YV, Dmitriev V. GaN Grown by Hydride - Metal Organic Vapor Phase Epitaxy (H-MOVPE) on Lattice-Matched Oxide and Silicon Substrates Materials Science Forum. 1473-1476. DOI: 10.4028/Www.Scientific.Net/Msf.389-393.1473  0.383
2002 Luo B, Johnson JW, Kryliouk O, Ren F, Pearton SJ, Chu SNG, Nikolaev AE, Melnik YV, Dmitriev VA, Anderson TJ. High breakdown M–I–M structures on bulk AlN Solid-State Electronics. 46: 573-576. DOI: 10.1016/S0038-1101(01)00299-4  0.339
1999 Kryliouk O, Reed M, Dann T, Anderson T, Chai B. Large area GaN substrates Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 66: 26-29. DOI: 10.1016/S0921-5107(99)00114-2  0.476
1999 Kryliouk O, Reed M, Dann T, Anderson T, Chai B. Growth of GaN single crystal substrates Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 59: 6-11. DOI: 10.1016/S0921-5107(98)00403-6  0.465
1999 Kryliouk O, Reed M, Mastro M, Anderson T, Chai B. GaN substrates: Growth and characterization Physica Status Solidi (a) Applied Research. 176: 407-410. DOI: 10.1002/(Sici)1521-396X(199911)176:1<407::Aid-Pssa407>3.0.Co;2-Q  0.446
1997 Burgess DR, Hotsenpiller PAM, Kryliouk O, Anderson TJ. Humidity Effects on the Electrical Properties of Epitaxial Rutile Thin Films Mrs Proceedings. 497: 225. DOI: 10.1557/Proc-497-225  0.386
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