Jamal Ghabboun, Ph.D. - Publications

Affiliations: 
2004 Weizmann Institute of Science, Rehovot, Israel 
Area:
Electronics and Electrical Engineering, Materials Science Engineering

15 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2014 Livshits GI, Ghabboun J, Borovok N, Kotlyar AB, Porath D. Comparative electrostatic force microscopy of tetra- and intra-molecular G4-DNA. Advanced Materials (Deerfield Beach, Fla.). 26: 4981-5. PMID 24899584 DOI: 10.1002/Adma.201401010  0.341
2014 Livshits GI, Ghabboun J, Borovok N, Kotlyar AB, Porath D. DNA: Comparative Electrostatic Force Microscopy of Tetra- and Intra-Molecular G4-DNA (Adv. Mater. 29/2014) Advanced Materials. 26: 5067-5067. DOI: 10.1002/Adma.201470200  0.303
2010 Sowwan M, Abul Haj M, Faroun M, Hawash Z, Ghabboun J, Rida A, Karmi A, Sultan W, Husseini GA. Growth of 2,2-Biimidazole-Based Nanorods on Mica Substrate Journal of Nanomaterials. 2010: 1-7. DOI: 10.1155/2010/706920  0.324
2008 Borovok N, Iram N, Zikich D, Ghabboun J, Livshits GI, Porath D, Kotlyar AB. Assembling of G-strands into novel tetra-molecular parallel G4-DNA nanostructures using avidin-biotin recognition. Nucleic Acids Research. 36: 5050-60. PMID 18663013 DOI: 10.1093/Nar/Gkn459  0.379
2008 Borovok N, Molotsky T, Ghabboun J, Porath D, Kotlyar A. Efficient procedure of preparation and properties of long uniform G4-DNA nanowires. Analytical Biochemistry. 374: 71-8. PMID 17996714 DOI: 10.1016/J.Ab.2007.10.017  0.305
2008 Bardavid Y, Ghabboun J, Porath D, Kotylar AB, Yitzchaik S. Formation of polyaniline layer on DNA by electrochemical polymerization Polymer. 49: 2217-2222. DOI: 10.1016/J.Polymer.2008.03.014  0.361
2007 Borovok N, Molotsky T, Ghabboun J, Cohen H, Porath D, Kotlyar A. Poly(dG)-poly(dC) DNA appears shorter than poly(dA)-poly(dT) and possibly adopts an A-related conformation on a mica surface under ambient conditions. Febs Letters. 581: 5843-6. PMID 18053809 DOI: 10.1016/J.Febslet.2007.11.058  0.323
2007 Ghabboun J, Sowwan M, Cohen H, Molotsky T, Borovok N, Dwir B, Kapon E, Kotlyar A, Porath D. Specific and efficient adsorption of phosphorothioated DNA on Au-based surfaces and electrodes Applied Physics Letters. 91: 173101. DOI: 10.1063/1.2800383  0.348
2005 Haick H, Ghabboun J, Niitsoo O, Cohen H, Cahen D, Vilan A, Hwang J, Wan A, Amy F, Kahn A. Effect of molecular binding to a semiconductor on metal/molecule/semiconductor junction behavior. The Journal of Physical Chemistry. B. 109: 9622-30. PMID 16852158 DOI: 10.1021/Jp0504470  0.535
2005 Haick H, Ghabboun J, Cahen D. Pd versus Au as evaporated metal contacts to molecules Applied Physics Letters. 86: 042113. DOI: 10.1063/1.1854742  0.514
2004 Haick H, Ambrico M, Ghabboun J, Ligonzo T, Cahen D. Contacting organic molecules by metal evaporation Physical Chemistry Chemical Physics. 6: 4538. DOI: 10.1039/B411490F  0.534
2003 Gershevitz O, Sukenik CN, Ghabboun J, Cahen D. Molecular monolayer-mediated control over semiconductor surfaces: evidence for molecular depolarization of silane monolayers on Si/SiO(x). Journal of the American Chemical Society. 125: 4730-1. PMID 12696890 DOI: 10.1021/Ja029529H  0.513
2002 Selzer Y, Salomon A, Ghabboun J, Cahen D. Voltage-driven changes in molecular dipoles yield negative differential resistance at room temperature. Angewandte Chemie (International Ed. in English). 41: 827-30. PMID 12491350 DOI: 10.1002/1521-3757(20020301)114:5<855::Aid-Ange855>3.0.Co;2-#  0.539
2001 Wu DG, Ghabboun J, Martin JML, Cahen D. Tuning of Au/n-GaAs Diodes with Highly Conjugated Molecules The Journal of Physical Chemistry B. 105: 12011-12018. DOI: 10.1021/Jp012708L  0.527
2001 Chernyak L, Ghabboun J, Lyahovitskaya V, Cahen D. Electric field-induced fabrication of microscopic Si-based optoelectronic devices for 1.55 and 1.16 μm IR electroluminescence Materials Science and Engineering: B. 81: 113-115. DOI: 10.1016/S0921-5107(00)00678-4  0.425
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