Year |
Citation |
Score |
2021 |
Walter TN, Oliver N, Mohney SE. Electron beam evaporated Au islands as a nanoscale etch mask on few-layer MoS and fabrication of top-edge hybrid contacts for field-effect transistors. Nanotechnology. 32: 025203. PMID 33055368 DOI: 10.1088/1361-6528/abbb4a |
0.394 |
|
2020 |
Schauble K, Zakhidov D, Yalon E, Deshmukh S, Grady RW, Cooley KA, McClellan CJ, Vaziri S, Passarello D, Mohney SE, Toney MF, Sood AK, Salleo A, Pop E. Uncovering the Effects of Metal Contacts on Monolayer MoS. Acs Nano. PMID 32905703 DOI: 10.1021/Acsnano.0C03515 |
0.346 |
|
2020 |
Kim D, Du R, Yu SY, Yin YW, Dong S, Li Q, Mohney SE, Li X, Tadigadapa S. Enhanced thermoelectric efficiency in nanocrystalline bismuth telluride nanotubes. Nanotechnology. PMID 32470964 DOI: 10.1088/1361-6528/Ab97D2 |
0.715 |
|
2020 |
Chen W, Talreja D, Eichfeld D, Mahale P, Nova NN, Cheng HY, Russell JL, Yu SY, Poilvert N, Mahan G, Mohney SE, Crespi VH, Mallouk TE, Badding JV, Foley B, et al. Achieving Minimal Heat Conductivity by Ballistic Confinement in Phononic Metalattices. Acs Nano. PMID 32223186 DOI: 10.1021/Acsnano.9B09487 |
0.722 |
|
2020 |
Molina A, Shallenberger JR, Mohney SE. Vapor phase passivation of (100) germanium surfaces with HBr Journal of Vacuum Science & Technology A. 38: 023208. DOI: 10.1116/1.5141941 |
0.779 |
|
2020 |
Chen Y, Liu Y, Moradifar P, Glaid AJ, Russell JL, Mahale P, Yu S, Culp TE, Kumar M, Gomez ED, Mohney SE, Mallouk TE, Alem N, Badding JV, Liu Y. Quantum transport in three-dimensional metalattices of platinum featuring an unprecedentedly large surface area to volume ratio Physical Review Materials. 4. DOI: 10.1103/Physrevmaterials.4.035201 |
0.724 |
|
2020 |
Walter TN, Cooley KA, Domask AC, Mohney SE. Nickel diffusion into MoS2 and the effect of annealing on contact resistance Materials Science in Semiconductor Processing. 107: 104850. DOI: 10.1016/J.Mssp.2019.104850 |
0.819 |
|
2019 |
Cooley KA, Alsaadi R, Gurunathan RL, Domask AC, Kerstetter L, Saidi WA, Mohney SE. Room-temperature epitaxy of metal thin films on tungsten diselenide Journal of Crystal Growth. 505: 44-51. DOI: 10.1016/J.Jcrysgro.2018.09.040 |
0.801 |
|
2018 |
Simchi H, Cooley KA, Ding Z, Molina A, Mohney SE. Novel Sn-based Contact Structure for GeTe Phase Change Materials. Acs Applied Materials & Interfaces. PMID 29668246 DOI: 10.1021/Acsami.8B02933 |
0.823 |
|
2018 |
Ji X, Cheng HY, Grede AJ, Molina A, Talreja D, Mohney SE, Giebink NC, Badding JV, Gopalan V. Conformal coating of amorphous silicon and germanium by high pressure chemical vapor deposition for photovoltaic fabrics Apl Materials. 6: 046105. DOI: 10.1063/1.5020814 |
0.79 |
|
2018 |
Domask AC, Cooley KA, Kabius B, Abraham M, Mohney SE. Room Temperature van der Waals Epitaxy of Metal Thin Films on Molybdenum Disulfide Crystal Growth & Design. 18: 3494-3501. DOI: 10.1021/Acs.Cgd.8B00257 |
0.794 |
|
2017 |
Liu Y, Kempinger S, He R, Day T, Moradifar P, Yu SY, Russell J, Torres V, Xu P, Mallouk TE, Mohney S, Alem N, Samarth N, Badding JV. Confined Chemical Fluid Deposition of Ferromagnetic Metalattices. Nano Letters. PMID 29236505 DOI: 10.1021/Acs.Nanolett.7B04633 |
0.721 |
|
2017 |
Abraham M, Mohney SE. Annealed Ag contacts to MoS2 field-effect transistors Journal of Applied Physics. 122: 115306. DOI: 10.1063/1.4991961 |
0.562 |
|
2017 |
Aldosari HM, Cooley KA, Yu S, Kragh-Buetow KC, Mohney SE. Thermal stability of low-resistance Au Ohmic contacts to GeTe Thin Solid Films. 621: 145-150. DOI: 10.1016/J.Tsf.2016.11.038 |
0.779 |
|
2017 |
Ji X, Page RL, Chaudhuri S, Liu W, Yu S, Mohney SE, Badding JV, Gopalan V. Optoelectronic Fibers: Single-Crystal Germanium Core Optoelectronic Fibers (Advanced Optical Materials 1/2017) Advanced Optical Materials. 5. DOI: 10.1002/Adom.201770004 |
0.688 |
|
2016 |
Aldosari HM, Simchi H, Ding Z, Cooley KA, Yu SY, Mohney SE. Impact of Premetallization Surface Preparation on Nickel-based Ohmic Contacts to Germanium Telluride: An X-ray Photoelectron Spectroscopic Study. Acs Applied Materials & Interfaces. 8: 34802-34809. PMID 27998133 DOI: 10.1021/Acsami.6B07412 |
0.779 |
|
2016 |
Ji X, Lei S, Yu S, Cheng HY, Liu W, Poilvert N, Xiong Y, Dabo I, Mohney SE, Badding JV, Gopalan V. Single-Crystal Silicon Optical Fiber by Direct Laser Crystallization Acs Photonics. 4: 85-92. DOI: 10.1021/Acsphotonics.6B00584 |
0.717 |
|
2016 |
Ji X, Page RL, Chaudhuri S, Liu W, Yu SY, Mohney SE, Badding JV, Gopalan V. Single-Crystal Germanium Core Optoelectronic Fibers Advanced Optical Materials. DOI: 10.1002/Adom.201600592 |
0.689 |
|
2015 |
Kragh-Buetow KC, Okojie RS, Lukco D, Mohney SE. Characterization of tungsten-nickel simultaneous Ohmic contacts to p- and n-type 4H-SiC Semiconductor Science and Technology. 30. DOI: 10.1088/0268-1242/30/10/105019 |
0.803 |
|
2014 |
Choi WH, You G, Abraham M, Yu SY, Liu J, Wang L, Xu J, Mohney SE. Sidewall passivation for InGaN/GaN nanopillar light emitting diodes Journal of Applied Physics. 116. DOI: 10.1063/1.4885455 |
0.762 |
|
2014 |
Agrawal A, Lin J, Barth M, White R, Zheng B, Chopra S, Gupta S, Wang K, Gelatos J, Mohney SE, Datta S. Fermi level depinning and contact resistivity reduction using a reduced titania interlayer in n-silicon metal-insulator-semiconductor ohmic contacts Applied Physics Letters. 104. DOI: 10.1063/1.4868302 |
0.744 |
|
2014 |
Raghavan AS, Palmer TA, Kragh-Buetow KC, Domask AC, Reutzel EW, Mohney SE, Debroy T. Employing microsecond pulses to form laser-fired contacts in photovoltaic devices Progress in Photovoltaics: Research and Applications. DOI: 10.1002/Pip.2523 |
0.776 |
|
2013 |
Yearsley JD, Lin JC, Mohney SE. Reduction of ohmic contact resistance of solid phase regrowth contacts to n-ingaas using a sulfur pretreatment Ieee Electron Device Letters. 34: 1184-1186. DOI: 10.1109/Led.2013.2274526 |
0.722 |
|
2012 |
Eichfeld CM, Gerstl SS, Prosa T, Ke Y, Redwing JM, Mohney SE. Local electrode atom probe analysis of silicon nanowires grown with an aluminum catalyst. Nanotechnology. 23: 215205. PMID 22552162 DOI: 10.1088/0957-4484/23/21/215205 |
0.767 |
|
2012 |
Abraham M, Weng X, Hyuck Choi W, Downey BP, Mohney SE. Extreme sensitivity of contact resistance to variations in the interfacial composition of Ti/Al-based contacts to N-face GaN/AlGaN heterostructures Applied Physics Letters. 101. DOI: 10.1063/1.4770365 |
0.753 |
|
2012 |
Yearsley JD, Lin JC, Hwang E, Datta S, Mohney SE. Ultra low-resistance palladium silicide Ohmic contacts to lightly doped n-InGaAs Journal of Applied Physics. 112. DOI: 10.1063/1.4748178 |
0.725 |
|
2012 |
Brom JE, Ke Y, Du R, Won D, Weng X, Andre K, Gagnon JC, Mohney SE, Li Q, Chen K, Xi XX, Redwing JM. Structural and electrical properties of epitaxial Bi 2Se 3 thin films grown by hybrid physical-chemical vapor deposition Applied Physics Letters. 100. DOI: 10.1063/1.4704680 |
0.747 |
|
2012 |
Dellas NS, Schuh CJ, Mohney SE. Silicide formation in contacts to Si nanowires Journal of Materials Science. 47: 6189-6205. DOI: 10.1007/S10853-012-6549-1 |
0.801 |
|
2011 |
Tan Z, Zhang Y, Xie C, Su H, Liu J, Zhang C, Dellas N, Mohney SE, Wang Y, Wang J, Xu J. Near-band-edge electroluminescence from heavy-metal-free colloidal quantum dots. Advanced Materials (Deerfield Beach, Fla.). 23: 3553-8. PMID 21732559 DOI: 10.1002/Adma.201100719 |
0.75 |
|
2011 |
Gao S, Zhang C, Liu Y, Su H, Wei L, Huang T, Dellas N, Shang S, Mohney SE, Wang J, Xu J. Lasing from colloidal InP/ZnS quantum dots. Optics Express. 19: 5528-35. PMID 21445191 DOI: 10.1364/Oe.19.005528 |
0.756 |
|
2011 |
Zhang Y, Xie C, Su H, Liu J, Pickering S, Wang Y, Yu WW, Wang J, Wang Y, Hahm JI, Dellas N, Mohney SE, Xu J. Employing heavy metal-free colloidal quantum dots in solution-processed white light-emitting diodes. Nano Letters. 11: 329-32. PMID 21188964 DOI: 10.1021/Nl1021442 |
0.752 |
|
2011 |
Eichfeld SM, Shen H, Eichfeld CM, Mohney SE, Dickey EC, Redwing JM. Gas phase equilibrium limitations on the vapor-liquid-solid growth of epitaxial silicon nanowires using SiCl4 Journal of Materials Research. 26: 2207-2214. DOI: 10.1557/Jmr.2011.144 |
0.767 |
|
2011 |
Ye G, Shi K, Burke R, Redwing JM, Mohney SE. Ti/Al ohmic contacts to n-type GaN nanowires Journal of Nanomaterials. 2011. DOI: 10.1155/2011/876287 |
0.332 |
|
2011 |
Downey BP, Flemish JR, Mohney SE. Investigation of polarity effects on the degradation of Pd/Ti/Pt ohmic contacts to p-type SiC under current stress Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 29. DOI: 10.1116/1.3659730 |
0.689 |
|
2011 |
Redwing JM, Ke Y, Wang X, Eichfeld C, Weng X, Kendrick CE, Mohney SE, Mayer TS. Vapor-liquid-solid growth and characterization of al-catalyzed Si nanowires 2011 International Semiconductor Device Research Symposium, Isdrs 2011. DOI: 10.1109/ISDRS.2011.6135144 |
0.79 |
|
2011 |
Downey BP, Mohney SE, Flemish JR. Improved stability of Pd/Ti contacts to p-type SiC under continuous DC and pulsed DC current stress Journal of Electronic Materials. 40: 406-412. DOI: 10.1007/S11664-010-1482-Z |
0.664 |
|
2010 |
Downey BP, Datta S, Mohney SE. Numerical study of reduced contact resistance via nanoscale topography at metal/semiconductor interfaces Semiconductor Science and Technology. 25. DOI: 10.1088/0268-1242/25/1/015010 |
0.711 |
|
2010 |
Dellas NS, Minassian S, Redwing JM, Mohney SE. Formation of nickel germanide contacts to Ge nanowires Applied Physics Letters. 97. DOI: 10.1063/1.3533808 |
0.798 |
|
2010 |
Dellas NS, Liang J, Cooley BJ, Samarth N, Mohney SE. Electron microscopy of GaAs/MnAs core/shell nanowires Applied Physics Letters. 97. DOI: 10.1063/1.3481066 |
0.774 |
|
2010 |
Sarpatwari K, Dellas NS, Awadelkarim OO, Mohney SE. Extracting the Schottky barrier height from axial contacts to semiconductor nanowires Solid-State Electronics. 54: 689-695. DOI: 10.1016/J.Sse.2010.03.006 |
0.801 |
|
2010 |
Downey BP, Mohney SE, Clark TE, Flemish JR. Reliability of aluminum-bearing ohmic contacts to SiC under high current density Microelectronics Reliability. 50: 1967-1972. DOI: 10.1016/J.Microrel.2010.07.007 |
0.687 |
|
2009 |
Ke Y, Weng X, Redwing JM, Eichfeld CM, Swisher TR, Mohney SE, Habib YM. Fabrication and electrical properties of si nanowires synthesized by Al catalyzed vapor-liquid-solid growth. Nano Letters. 9: 4494-9. PMID 19904918 DOI: 10.1021/Nl902808R |
0.783 |
|
2009 |
Cooley BJ, Clark TE, Liu BZ, Eichfeld CM, Dickey EC, Mohney SE, Crooker SA, Samarth N. Growth of magneto-optically active (Zn,Mn)Se nanowires. Nano Letters. 9: 3142-6. PMID 19736970 DOI: 10.1021/Nl901272Q |
0.758 |
|
2009 |
Mohammad AM, Abdullah AM, El-Anadouli BE, Mohney SE. Template-assisted growth of rhodium nanowire contacts to silicon nanowires International Journal of Nanomanufacturing. 4: 146-158. DOI: 10.1504/Ijnm.2009.028121 |
0.317 |
|
2009 |
Dormaier R, Zhang Q, Chou YC, Lange MD, Yang JM, Oki A, Mohney SE. Pd/Ru/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 27: 2145-2152. DOI: 10.1116/1.3204983 |
0.79 |
|
2009 |
Dellas NS, Liu BZ, Eichfeld SM, Eichfeld CM, Mayer TS, Mohney SE. Orientation dependence of nickel silicide formation in contacts to silicon nanowires Journal of Applied Physics. 105. DOI: 10.1063/1.3115453 |
0.796 |
|
2009 |
Dormaier R, Zhang Q, Liu B, Chou YC, Lange MD, Yang JM, Oki AK, Mohney SE. Thermal stability of Pd/Pt/Au Ohmic contacts to InAlSb/InAs heterostructures for high electron mobility transistors Journal of Applied Physics. 105. DOI: 10.1063/1.3068378 |
0.801 |
|
2009 |
Downey BP, Flemish JR, Liu BZ, Clark TE, Mohney SE. Current-induced degradation of nickel ohmic contacts to SiC Journal of Electronic Materials. 38: 563-568. DOI: 10.1007/S11664-008-0612-3 |
0.699 |
|
2008 |
Dellas NS, Meinert K, Mohney SE. Laser-enhanced electroless plating of silver seed layers for selective electroless copper deposition Journal of Laser Applications. 20: 218-223. DOI: 10.2351/1.2995767 |
0.762 |
|
2008 |
Lysczek EM, Mohney SE. Selective deposition of ohmic contacts to p-InGaAs by electroless plating Journal of the Electrochemical Society. 155. DOI: 10.1149/1.2958297 |
0.363 |
|
2008 |
Miller MA, Mohney SE. High and low temperature behavior of Ohmic contacts to AlGaN/GaN heterostructures with a thin GaN cap Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1883-1886. DOI: 10.1116/1.3006018 |
0.347 |
|
2008 |
Woodruff SM, Dellas NS, Liu BZ, Eichfeld SM, Mayer TS, Redwing JM, Mohney SE. Nickel and nickel silicide Schottky barrier contacts to n -type silicon nanowires Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 26: 1592-1596. DOI: 10.1116/1.2939256 |
0.811 |
|
2007 |
Eichfeld CM, Wood C, Liu B, Eichfeld SM, Redwing JM, Mohney SE. Selective plating for junction delineation in silicon nanowires. Nano Letters. 7: 2642-4. PMID 17696558 DOI: 10.1021/Nl0710248 |
0.769 |
|
2007 |
Liu B, Wang Y, Dilts S, Mayer TS, Mohney SE. Silicidation of silicon nanowires by platinum. Nano Letters. 7: 818-24. PMID 17295545 DOI: 10.1021/nl062393r |
0.311 |
|
2007 |
Eichfeld SM, Ho TT, Eichfeld CM, Cranmer A, Mohney SE, Mayer TS, Redwing JM. Resistivity measurements of intentionally and unintentionally template-grown doped silicon nanowire arrays Nanotechnology. 18. DOI: 10.1088/0957-4484/18/31/315201 |
0.306 |
|
2006 |
Mohney SE, Wang SH, Lysczek EM, Robinson JA. Ohmic contacts to p-type III-V semiconductors for the base of heterojunction bipolar transistors Ecs Transactions. 3: 47-56. DOI: 10.1149/1.2357195 |
0.303 |
|
2006 |
Wang SH, Lysczek EM, Liu B, Robinson JA, Mohney SE. Shallow and thermally stable ohmic contacts to p-InAsP Journal of the Electrochemical Society. 153. DOI: 10.1149/1.2184928 |
0.353 |
|
2006 |
Lysczek EM, Robinson JA, Mohney SE. Ohmic contacts to p-type InAs Materials Science and Engineering B: Solid-State Materials For Advanced Technology. 134: 44-48. DOI: 10.1016/j.mseb.2006.07.016 |
0.336 |
|
2005 |
Dilts SM, Mohmmad A, Lew KK, Redwing JM, Mohney SE. Fabrication and electrical characterization of silicon nanowire arrays Materials Research Society Symposium Proceedings. 832: 287-292. DOI: 10.1557/Proc-832-F9.10 |
0.351 |
|
2005 |
Redwing JM, Dilts SM, Lew KK, Cranmer A, Mohney SE. High density group iv semiconductor nanowire arrays fabricated in nanoporous alumina templates Proceedings of Spie - the International Society For Optical Engineering. 6003. DOI: 10.1117/12.632745 |
0.317 |
|
2005 |
Wang SH, Robinson JA, Mohney SE, Bennett BR. Shallow and thermally stable Pt/W/Au Ohmic contacts to p-type InGaSb Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 23: 293-297. DOI: 10.1116/1.1865119 |
0.338 |
|
2005 |
Readinger ED, Robinson JA, Mohney SE, Therrien R. Thermal stability of metallizations on GaN/AlxGa 1-xN/GaN heterostructures Semiconductor Science and Technology. 20: 389-397. DOI: 10.1088/0268-1242/20/5/011 |
0.337 |
|
2005 |
Wang SH, Lysczek EM, Liu B, Mohney SE, Xu Z, Nagarajan R, Edgar JH. CrPt Ohmic contacts to B 12 As 2 Applied Physics Letters. 87. DOI: 10.1063/1.2001760 |
0.361 |
|
2005 |
Robinson JA, Mohney SE. A low-resistance, thermally stable Ohmic contact to n-GaSb Journal of Applied Physics. 98. DOI: 10.1063/1.1989429 |
0.366 |
|
2005 |
Eichfeld CM, Horsey MA, Mohney SE, Adedeji AV, Williams JR. Ta-Ru-N diffusion barriers for high-temperature contacts to p-type SiC Thin Solid Films. 485: 207-211. DOI: 10.1016/j.tsf.2005.04.005 |
0.783 |
|
2005 |
Mohney SE, Wang Y, Cabassi MA, Lew KK, Dey S, Redwing JM, Mayer TS. Measuring the specific contact resistance of contacts to semiconductor nanowires Solid-State Electronics. 49: 227-232. DOI: 10.1016/J.Sse.2004.08.006 |
0.665 |
|
2005 |
Bogart TE, Dey S, Lew KK, Mohney SE, Redwing JM. Diameter-controlled synthesis of silicon nanowires using nanoporous alumina membranes Advanced Materials. 17: 114-117. DOI: 10.1002/Adma.200400373 |
0.568 |
|
2004 |
Hull BA, Mohney SE, Chowdhury U, Dupuis RD. Compositional shift in Al[sub x]Ga[sub 1−x]N beneath annealed metal contacts Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 22: 654. DOI: 10.1116/1.1676683 |
0.66 |
|
2004 |
Hull BA, Mohney SE, Chowdhury U, Dupuis RD. Ohmic contacts to p-type Al 0.45Ga 0.55N Journal of Applied Physics. 96: 7325-7331. DOI: 10.1063/1.1814169 |
0.672 |
|
2003 |
Mohammad AM, Dey S, Lew KK, Redwing JM, Mohney SE. Fabrication of Cobalt Silicide Nanowire Contacts to Silicon Nanowires Journal of the Electrochemical Society. 150. DOI: 10.1149/1.1598966 |
0.629 |
|
2003 |
Wang SH, Mohney SE, Hull BA, Bennett BR. Design of a shallow thermally stable ohmic contact to p-type InGaSb Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 21: 633. DOI: 10.1116/1.1545731 |
0.684 |
|
2003 |
Lysczek EM, Mohney SE, Wittberg TN. Shallow ohmic contacts to p-type InAs Electronics Letters. 39: 1866-1868. DOI: 10.1049/el:20031154 |
0.357 |
|
2002 |
Hull BA, Mohney SE, Chowdhury U, Dupuis RD, Gotthold D, Birkhahn R, Pophristic M. Contacts to High Aluminum Fraction p-type Aluminum Gallium Nitride Mrs Proceedings. 743. DOI: 10.1557/Proc-743-L12.2 |
0.661 |
|
2002 |
Wang SH, Mohney SE, Birkhahn R. Environmental and thermal aging of Au/Ni/p-GaN ohmic contacts annealed in air Journal of Applied Physics. 91: 3711-3716. DOI: 10.1063/1.1448885 |
0.327 |
|
2002 |
Mohney SE, Hull BA, Lin JY, Crofton J. Morphological study of the Al-Ti ohmic contact to p-type SiC Solid-State Electronics. 46: 689-693. DOI: 10.1016/S0038-1101(01)00327-6 |
0.7 |
|
2001 |
Schweitz KO, Pribicko TG, Mohney SE, Isaacs-Smith TF, Williams J, Pophristic M, Gotthold D, Birkhahn R, Ferguson I. The Influence of Contact Composition, Pretreatment, and Annealing Gas on the Ohmic Behavior of Ti/Al-Based Ohmic Contacts to n-Al0.4Ga0.6N Mrs Proceedings. 680. DOI: 10.1557/Proc-680-E6.2 |
0.331 |
|
2001 |
Wang PK, Schweitz KO, Pribicko TG, Mohney SE, Pophristic M, Gotthold D. Ohmic contacts to n-type AlGaN and nitride HEMT epilayers 2001 International Semiconductor Device Research Symposium, Isdrs 2001 - Proceedings. 199-200. DOI: 10.1109/ISDRS.2001.984474 |
0.326 |
|
2001 |
Readinger ED, Luther BP, Mohney SE, Piner EL. Environmental aging of Schottky contacts to n-AlGaN Journal of Applied Physics. 89: 7983-7987. DOI: 10.1063/1.1370367 |
0.301 |
|
2000 |
Kwak JS, Mohney SE, Lin JY, Kern R. Low resistance Al/Ti/n-GaN ohmic contacts with improved surface morphology and thermal stability Semiconductor Science and Technology. 15: 756-760. DOI: 10.1088/0268-1242/15/7/316 |
0.323 |
|
2000 |
Hull BA, Mohney SE, Venugopalan HS, Ramer JC. Influence of oxygen on the activation of p-type GaN Applied Physics Letters. 76: 2271-2273. DOI: 10.1063/1.126318 |
0.586 |
|
1999 |
Ren Y, Micovic M, Cai WZ, Mohney S, Lord SM, Miller DL, Mayer TS. Effect of in situ annealing on highly-mismatched In0.75Ga0.25As on InP grown using molecular beam epitaxy Journal of Electronic Materials. 28: 887-893. DOI: 10.1007/S11664-999-0215-7 |
0.373 |
|
1998 |
Luther BP, Mohney SE, Jackson TN. Titanium and titanium nitride contacts to n-type gallium nitride Semiconductor Science and Technology. 13: 1322-1327. DOI: 10.1088/0268-1242/13/11/017 |
0.365 |
|
1998 |
DeLucca JM, Venugopalan HS, Mohney SE, Karlicek RF. Ohmic contacts formed by electrodeposition and physical vapor deposition on p-GaN Applied Physics Letters. 73: 3402-3404. DOI: 10.1063/1.122756 |
0.372 |
|
1998 |
Oder TN, Williams JR, Bozack MJ, Iyer V, Mohney SE, Crofton J. High temperature stability of chromium boride ohmic contacts to p-type 6H-SiC Journal of Electronic Materials. 27: 324-329. DOI: 10.1007/S11664-998-0409-4 |
0.353 |
|
1996 |
Luther BP, Mohney SE, Jackson TN, Asif Khan M, Chen Q, Yang JW. Investigation of Aluminum and Titanium/Aluminum Contacts to n-Type Gallium Nitride Mrs Proceedings. 449. DOI: 10.1557/PROC-449-1097 |
0.328 |
|
1996 |
Delucca JM, Mohney SE. Approaches to High Temperature Contacts to Silicon Carbide Mrs Proceedings. 423. DOI: 10.1557/PROC-423-137 |
0.315 |
|
1995 |
Mohney S, Luther B, Jackson T, Khan M. Metallurgical Study of Contacts to Gallium Nitride Mrs Proceedings. 395. DOI: 10.1557/PROC-395-843 |
0.307 |
|
1989 |
Guckel H, Sniegowski JJ, Christenson TR, Mohney S, Kelly TF. Fabrication of micromechanical devices from polysilicon films with smooth surfaces Sensors and Actuators. 20: 117-122. DOI: 10.1016/0250-6874(89)87109-4 |
0.359 |
|
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