| Year |
Citation |
Score |
| 2019 |
Zhang J, Niu G, Cai W, Wang W, Imura K. Intermodulation Linearity Characteristics of 14-nm RF FinFETs Ieee Transactions On Electron Devices. 66: 2520-2526. DOI: 10.1109/Ted.2019.2912516 |
0.396 |
|
| 2018 |
Zhang H, Niu G, Liang Q, Imura K. Extraction of Drain Current Thermal Noise in a 28 nm High-
${k}$
/Metal Gate RF CMOS Technology Ieee Transactions On Electron Devices. 65: 2393-2399. DOI: 10.1109/Ted.2018.2820698 |
0.354 |
|
| 2016 |
Li Y, Niu G. A CCCS-Based Approach to Modeling of Thermal Coupling Ieee Transactions On Electron Devices. 63: 1791-1794. DOI: 10.1109/Ted.2016.2535360 |
0.318 |
|
| 2015 |
Li Z, Niu G, Liang Q, Imura K. Intermodulation linearity in high-k/metal gate 28 nm RF CMOS transistors Electronics. 4: 614-622. DOI: 10.3390/Electronics4030614 |
0.352 |
|
| 2015 |
Niu G, Ma R, Luo L, Cressler JD. Wide temperature range SiGe HBT noise parameter modeling and LNA design for extreme environment Electronics International Journal of Numerical Modelling: Electronic Networks, Devices and Fields. 28: 675-683. DOI: 10.1002/Jnm.2055 |
0.333 |
|
| 2014 |
Jia X, Niu G. Impact of Correlated RF Noise on SiGe HBT Noise Parameters and LNA Design Implications Ieee Transactions On Electron Devices. 61: 2324-2331. DOI: 10.1109/Ted.2014.2324031 |
0.328 |
|
| 2013 |
Xia K, Niu G. Effect of boundary conditions on thermal noise of intrinsic terminal currents in bipolar transistors pertinent to quasi-ballistic transport Ieee Transactions On Electron Devices. 60: 4226-4233. DOI: 10.1109/Ted.2013.2287878 |
0.356 |
|
| 2012 |
Xia K, Niu G, Xu Z. A New Approach to Implementing High-Frequency Correlated Noise for Bipolar Transistor Compact Modeling Ieee Transactions On Electron Devices. 59: 302-308. DOI: 10.1109/Ted.2011.2174795 |
0.613 |
|
| 2010 |
Xu Z, Niu G, Luo L, Cressler JD, Alles ML, Reed R, Mantooth HA, Holmes J, Marshall PW. Charge collection and SEU in SiGe HBT current mode logic operating at cryogenic temperatures Ieee Transactions On Nuclear Science. 57: 3206-3211. DOI: 10.1109/Tns.2010.2085050 |
0.391 |
|
| 2010 |
Turowski M, Pellish JA, Moen KA, Raman A, Cressler JD, Reed RA, Niu G. Reconciling 3-D mixed-mode simulations and measured single-event transients in SiGe HBTs Ieee Transactions On Nuclear Science. 57: 3342-3348. DOI: 10.1109/Tns.2010.2076835 |
0.356 |
|
| 2010 |
Xia K, Niu G. Modeling the input non-quasi-static effect in small signal equivalent circuit based on charge partitioning for bipolar transistors and its impact on RF noise modeling Solid-State Electronics. 54: 1566-1571. DOI: 10.1016/J.Sse.2010.08.002 |
0.395 |
|
| 2009 |
Zhang T, Wei X, Niu G, Cressler JD, Marshall PW, Reed RA. A Mechanism Versus SEU Impact Analysis of Collector Charge Collection in SiGe HBT Current Mode Logic Ieee Transactions On Nuclear Science. 56: 3071-3077. DOI: 10.1109/Tns.2009.2032911 |
0.665 |
|
| 2009 |
Wei X, Niu G, Li Y, Yang M, Taylor SS. Modeling and Characterization of Intermodulation Linearity on a 90-nm RF CMOS Technology Ieee Transactions On Microwave Theory and Techniques. 57: 965-971. DOI: 10.1109/Tmtt.2009.2014448 |
0.675 |
|
| 2009 |
Xia K, Niu G. Discussions and extension of van Vliet's noise model for high speed bipolar transistors Solid-State Electronics. 53: 349-354. DOI: 10.1016/J.Sse.2009.01.010 |
0.351 |
|
| 2008 |
Pellish JA, Reed RA, McMorrow D, Melinger JS, Jenkins P, Sutton AK, Diestelhorst RM, Phillips SD, Cressler JD, Pouget V, Pate ND, Kozub JA, Mendenhall MH, Weller RA, Schrimpf RD, ... ... Niu G, et al. Laser-induced current transients in silicon-germanium HBTs Ieee Transactions On Nuclear Science. 55: 2936-2942. DOI: 10.1109/Tns.2008.2007954 |
0.307 |
|
| 2008 |
Wei X, Zhang T, Niu G, Varadharajaperumal M, Cressler JD, Marshall PW. 3-D Mixed-Mode Simulation of Single Event Transients in SiGe HBT Emitter Followers and Resultant Hardening Guidelines Ieee Transactions On Nuclear Science. 55: 3360-3366. DOI: 10.1109/Tns.2008.2006840 |
0.669 |
|
| 2008 |
Montes EJ, Reed RA, Pellish JA, Alles ML, Schrimpf RD, Weller RA, Varadharajaperumal M, Niu G, Sutton AK, Diestelhorst R, Espinel G, Krithivasan R, Comeau JP, Cressler JD, Marshall PW, et al. Single event upset mechanisms for low-energy-deposition events in SiGe HBTs Ieee Transactions On Nuclear Science. 55: 1581-1586. DOI: 10.1109/Tns.2007.893920 |
0.391 |
|
| 2008 |
Sutton AK, Moen K, Cressler JD, Carts MA, Marshall PW, Pellish JA, Ramachandran V, Reed RA, Alles ML, Niu G. Proton-induced SEU in SiGe digital logic at cryogenic temperatures Solid-State Electronics. 52: 1652-1659. DOI: 10.1016/J.Sse.2008.06.038 |
0.327 |
|
| 2007 |
Varadharajaperumal M, Niu G, Wei X, Zhang T, Cressler JD, Reed RA, Marshall PW. 3-D Simulation of SEU Hardening of SiGe HBTs Using Shared Dummy Collector Ieee Transactions On Nuclear Science. 54: 2330-2337. DOI: 10.1109/Tns.2007.910290 |
0.665 |
|
| 2007 |
Sutton AK, Bellini M, Cressler JD, Pellish JA, Reed RA, Marshall PW, Niu G, Vizkelethy G, Turowski M, Raman A. An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs Ieee Transactions On Nuclear Science. 54: 2044-2052. DOI: 10.1109/Tns.2007.908697 |
0.367 |
|
| 2007 |
Mukherjee TS, Sutton AK, Kornegay KT, Krithivasan R, Cressler JD, Niu G, Marshall PW. A novel circuit-level SEU hardening technique for high-speed SiGe HBT logic circuits Ieee Transactions On Nuclear Science. 54: 2086-2091. DOI: 10.1109/Tns.2007.908460 |
0.349 |
|
| 2007 |
Wei X, Niu G, Sweeney S, Liang Q, Wang X, Taylor S. A General 4-Port Solution for 110 GHz On-Wafer Transistor Measurements With or Without Impedance Standard Substrate (ISS) Calibration Ieee Transactions On Electron Devices. 54: 2706-2714. DOI: 10.1109/Ted.2007.904362 |
0.635 |
|
| 2007 |
Appaswamy A, Bellini M, Kuo WML, Cheng P, Yuan J, Zhu C, Cressler JD, Niu G, Joseph AJ. Impact of scaling on the inverse-mode operation of SiGe HBTs Ieee Transactions On Electron Devices. 54: 1492-1501. DOI: 10.1109/Ted.2007.896570 |
0.32 |
|
| 2007 |
Yuan J, Cressler JD, Zhu C, Cui Y, Niu G, Liang Q, Joseph AJ. An investigation of negative differential resistance and novel collector-current kink effects in SiGe HBTs operating at cryogenic temperatures Ieee Transactions On Electron Devices. 54: 504-516. DOI: 10.1109/Ted.2006.890392 |
0.386 |
|
| 2007 |
Reed RA, Vizkelethy G, Pellish JA, Sierawski B, Warren KM, Porter M, Wilkinson J, Marshall PW, Niu G, Cressler JD, Schrimpf RD, Tipton A, Weller RA. Applications of heavy ion microprobe for single event effects analysis Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 261: 443-446. DOI: 10.1016/J.Nimb.2007.04.163 |
0.361 |
|
| 2006 |
Pellish JA, Reed RA, Schrimpf RD, Alles ML, Varadharajaperumal M, Niu G, Sutton AK, Diestelhorst RM, Espinel G, Krithivasan R, Comeau JP, Cressler JD, Vizkelethy G, Marshall PW, Weller RA, et al. Substrate engineering concepts to mitigate charge collection in deep trench isolation technologies Ieee Transactions On Nuclear Science. 53: 3298-3305. DOI: 10.1109/Tns.2006.885798 |
0.347 |
|
| 2006 |
Krithivasan R, Marshall PW, Nayeem M, Sutton AK, Kuo WM, Haugerud BM, Najafizadeh L, Cressler JD, Carts MA, Marshall CJ, Hansen DL, Jobe KCM, McKay AL, Niu G, Reed R, et al. Application of RHBD techniques to SEU hardening of third-generation SiGe HBT logic circuits Ieee Transactions On Nuclear Science. 53: 3400-3407. DOI: 10.1109/Tns.2006.885379 |
0.367 |
|
| 2006 |
Xia K, Niu G, Sheridan DC, Sweeney SL. Frequency and bias-dependent modeling of correlated base and collector current RF noise in SiGe HBTs using quasi-static equivalent circuit Ieee Transactions On Electron Devices. 53: 515-522. DOI: 10.1109/Ted.2005.863537 |
0.621 |
|
| 2005 |
Niu G, Yang H, Varadharajaperumal M, Shi Y, Cressler JD, Krithivasan R, Marshall PW, Reed R. Simulation of a new back junction approach for reducing charge collection in 200 GHz SiGe HBTs Ieee Transactions On Nuclear Science. 52: 2153-2157. DOI: 10.1109/Tns.2005.860744 |
0.355 |
|
| 2005 |
Liang Q, Andrews JM, Cressler JD, Niu G. Systematic linearity analysis of RFICs using a two-port lumped-nonlinear-source model Ieee Transactions On Microwave Theory and Techniques. 53: 1745-1755. DOI: 10.1109/Tmtt.2005.847101 |
0.324 |
|
| 2005 |
Liang Q, Niu G, Cressler JD, Taylor S, Harame DL. On the optimization and design of SiGe HBT cascode low-noise amplifiers Solid-State Electronics. 49: 329-341. DOI: 10.1016/J.Sse.2004.10.002 |
0.379 |
|
| 2004 |
Varadharajaperumal M, Niu G, Cressler JD, Reed RA, Marshall PW. Three-dimensional Simulation of heavy-ion induced charge collection in SiGe HBTs on SOI Ieee Transactions On Nuclear Science. 51: 3298-3303. DOI: 10.1109/Tns.2004.839144 |
0.369 |
|
| 2004 |
Tang J, Niu G, Joseph AJ, Harame DL. Impact of collector-base junction traps on low-frequency noise in high breakdown voltage SiGe HBTs Ieee Transactions On Electron Devices. 51: 1475-1482. DOI: 10.1109/Ted.2004.833582 |
0.401 |
|
| 2004 |
Johansen JA, Jin Z, Cressler JD, Cui Y, Niu G, Liang Q, Rieh JS, Freeman G, Ahlgren D, Joseph A. On the scaling limits of low-frequency noise in SiGe HBTs Solid-State Electronics. 48: 1897-1900. DOI: 10.1016/J.Sse.2004.05.032 |
0.365 |
|
| 2003 |
Krithivasan R, Niu G, Cressler JD, Currie SM, Fritz KE, Reed RA, Marshall PW, Riggs PA, Randall BA, Gilbert B. An SEU Hardening Approach for High-Speed SiGe HBT Digital Logic Ieee Transactions On Nuclear Science. 50: 2126-2134. DOI: 10.1109/Tns.2003.822094 |
0.376 |
|
| 2003 |
Li Y, Niu G, Cressler JD, Patel J, Liu M, Mojarradi MM, Reed RA, Marshall PW, Blalock BJ. Probing proton damage in SOI CMOS technology by using lateral bipolar action Ieee Transactions On Nuclear Science. 50: 1885-1890. DOI: 10.1109/Tns.2003.822088 |
0.323 |
|
| 2003 |
Reed RA, Marshall PW, Pickel JC, Carts MA, Fodness B, Niu G, Fritz K, Vizkelethy G, Dodd PE, Irwin T, Cressler JD, Krithivasan R, Riggs P, Prairie J, Randall B, et al. Heavy-Ion Broad-Beam and Microprobe Studies of Single-Event Upsets in 0.20-μm SiGe Heterojunction Bipolar Transistors and Circuits Ieee Transactions On Nuclear Science. 50: 2184-2190. DOI: 10.1109/Tns.2003.821815 |
0.379 |
|
| 2003 |
Li Y, Cressler JD, Lu Y, Pan J, Niu G, Reed RA, Marshall PW, Polar C, Palmer MJ, Joseph AJ. Proton Tolerance of Multiple-Threshold Voltage and Multiple-Breakdown Voltage CMOS Device Design Points in a 0.18 μm System-on-a-Chip CMOS Technology Ieee Transactions On Nuclear Science. 50: 1834-1838. DOI: 10.1109/Tns.2003.821800 |
0.407 |
|
| 2003 |
Varadharajaperumal M, Niu G, Krithivasan R, Cressler JD, Reed RA, Marshall PW, Vizkelethy G, Dodd PE, Joseph AJ. 3-D Simulation of Heavy-Ion Induced Charge Collection in SiGe HBTs Ieee Transactions On Nuclear Science. 50: 2191-2198. DOI: 10.1109/Tns.2003.820775 |
0.353 |
|
| 2003 |
Chen W, Pouget V, Barnaby HJ, Cressler JD, Niu G, Fouillat P, Deval Y, Lewis D. Investigation of Single-Event Transients in Voltage-Controlled Oscillators Ieee Transactions On Nuclear Science. 50: 2081-2087. DOI: 10.1109/Tns.2003.820766 |
0.35 |
|
| 2003 |
Liang Q, Cressler JD, Niu G, Lu Y, Freeman G, Ahlgren DC, Malladi RM, Newton K, Harame DL. A simple four-port parasitic deembedding methodology for high-frequency scattering parameter and noise characterization of SiGe HBTs Ieee Transactions On Microwave Theory and Techniques. 51: 2165-2174. DOI: 10.1109/Tmtt.2003.818580 |
0.361 |
|
| 2003 |
Shi Y, Niu G, Cressler JD, Harame DL. On the consistent modeling of band-gap narrowing for accurate device-level simulation of scaled SiGe HBTs Ieee Transactions On Electron Devices. 50: 1370-1377. DOI: 10.1109/Ted.2003.813237 |
0.342 |
|
| 2003 |
Jin Z, Cressler JD, Niu G, Joseph AJ. Impact of geometrical scaling on low-frequency noise in SiGe HBTs Ieee Transactions On Electron Devices. 50: 676-682. DOI: 10.1109/Ted.2003.810483 |
0.353 |
|
| 2003 |
Pan J, Niu G, Tang J, Shi Y, Joseph AJ, Harame DL. Substrate Current Based Avalanche Multiplication Measurement in 120 GHz SiGe HBTs Ieee Electron Device Letters. 24: 736-738. DOI: 10.1109/Led.2003.820647 |
0.326 |
|
| 2003 |
Chen KJ, Niu G. Logic synthesis and circuit modeling of a programmable logic gate based on controlled quenching of series-connected negative differential resistance devices Ieee Journal of Solid-State Circuits. 38: 312-318. DOI: 10.1109/Jssc.2002.807403 |
0.394 |
|
| 2003 |
Zhang S, Cressler JD, Niu G, Marshall CJ, Marshall PW, Kim HS, Reed RA, Palmer MJ, Joseph AJ, Harame DL. The effects of operating bias conditions on the proton tolerance of SiGe HBTs Solid-State Electronics. 47: 1729-1734. DOI: 10.1016/S0038-1101(03)00131-X |
0.325 |
|
| 2003 |
Li Y, Niu G, Cressler JD, Patel J, Liu S, Reed RA, Mojarradi MM, Blalock BJ. The operation of 0.35 μm partially depleted SOI CMOS technology in extreme environments Solid-State Electronics. 47: 1111-1115. DOI: 10.1016/S0038-1101(02)00516-6 |
0.351 |
|
| 2003 |
Jin Z, Cressler JD, Niu G, Marshall PW, Kim HS, Reed R, Joseph AJ. Proton response of low-frequency noise in 0.20 μ m 90 GHz fT UHV/CVD SiGe HBTs Solid-State Electronics. 47: 39-44. DOI: 10.1016/S0038-1101(02)00251-4 |
0.349 |
|
| 2002 |
Li Y, Niu G, Cressler J, Patel J, Marshall P, Kim H, Liu M, Reed R, Palmer M. Proton radiation effects in 0.35-μm partially depleted SOI MOSFETs fabricated on UNIBOND Ieee Transactions On Nuclear Science. 49: 2930-2936. DOI: 10.1109/Tns.2002.805428 |
0.332 |
|
| 2002 |
Niu G, Krithivasan R, Cressler JD, Riggs PA, Randall BA, Marshall PW, Reed RA, Gilbert B. A comparison of SEU tolerance in high-speed SiGe HBT digital logic designed with multiple circuit architectures Ieee Transactions On Nuclear Science. 49: 3107-3114. DOI: 10.1109/Tns.2002.805390 |
0.392 |
|
| 2002 |
Cressler JD, Krithivasan R, Zhang G, Niu G, Marshall PW, Kim HS, Reed RA, Palmer MJ, Joseph AJ. An investigation of the origins of the variable proton tolerance in multiple SiGe HBT BiCMOS technology generations Ieee Transactions On Nuclear Science. 49: 3203-3207. DOI: 10.1109/Tns.2002.805362 |
0.346 |
|
| 2002 |
Zhang G, Cressler JD, Niu G, Joseph AJ. A new "mixed-mode" reliability degradation mechanism in advanced Si and SiGe bipolar transistors Ieee Transactions On Electron Devices. 49: 2151-2156. DOI: 10.1109/Ted.2002.805566 |
0.347 |
|
| 2002 |
Liang Q, Cressler JD, Niu G, Malladi RM, Newton K, Harame DL. A physics-based high-injection transit-time model applied to barrier effects in SiGe HBTs Ieee Transactions On Electron Devices. 49: 1807-1813. DOI: 10.1109/Ted.2002.803631 |
0.328 |
|
| 2002 |
Zhang S, Niu G, Cressler JD, Joseph AJ, Freeman G, Harame DL. The effects of geometrical scaling on the frequency response and noise performance of SiGe HBTs Ieee Transactions On Electron Devices. 49: 429-435. DOI: 10.1109/16.987113 |
0.359 |
|
| 2002 |
Niu G, Cressler JD, Zhang S, Joseph A, Harame D. Noise-gain tradeoff in RF SiGe HBTs Solid-State Electronics. 46: 1445-1451. DOI: 10.1016/S0038-1101(02)00087-4 |
0.345 |
|
| 2002 |
Zhang G, Cressler JD, Lanzerotti L, Johnson R, Jin Z, Zhang S, Niu G, Joseph A, Harame D. Electric field effects associated with the backside Ge profile in SiGe HBTs Solid-State Electronics. 46: 655-659. DOI: 10.1016/S0038-1101(01)00333-1 |
0.324 |
|
| 2001 |
Niu G, Jin Z, Cressler JD, Rapeta R, Joseph AJ, Harame D. Transistor noise in SiGe HBT RF technology Ieee Journal of Solid-State Circuits. 36: 1424-1427. DOI: 10.1109/4.944672 |
0.354 |
|
| 2001 |
Jin Z, Niu G, Cressler JD, Marshall CJ, Marshall PW, Kim HS, Reed RA, Harame DL. 1/f noise in proton-irradiated SiGe HBTs Ieee Transactions On Nuclear Science. 48: 2244-2249. DOI: 10.1109/23.983203 |
0.342 |
|
| 2001 |
Cressler JD, Hamilton MC, Krithivasan R, Ainspan H, Groves R, Niu G, Zhang S, Jin Z, Marshall CJ, Marshall PW, Kim HS, Reed RA, Palmer MJ, Joseph AJ, Harame DL. Proton radiation response of SiGe HBT analog and RF circuits and passives Ieee Transactions On Nuclear Science. 48: 2238-2243. DOI: 10.1109/23.983202 |
0.387 |
|
| 2001 |
Li Y, Niu G, Cressler JD, Patel J, Marshall CJ, Marshall PW, Kim HS, Reed RA, Palmer MJ. Anomalous radiation effects in fully depleted SOI MOSFETs fabricated on SIMOX Ieee Transactions On Nuclear Science. 48: 2146-2151. DOI: 10.1109/23.983187 |
0.385 |
|
| 2001 |
Niu G, Krithivasan R, Cressler JD, Marshall C, Marshall P, Reed R, Harame DL. Modeling of single-event effects in circuit-hardened high-speed SiGe HBT logic Ieee Transactions On Nuclear Science. 48: 1849-1854. DOI: 10.1109/23.983141 |
0.411 |
|
| 2001 |
Niu G, Cressler JD, Zhang S, Ansley WE, Webster CS, Harame DL. A unified approach to RF and microwave noise parameter modeling in bipolar transistors Ieee Transactions On Electron Devices. 48: 2568-2574. DOI: 10.1109/16.960384 |
0.357 |
|
| 2001 |
Sheridan DC, Niu G, Cressler JD. Design of single and multiple zone junction termination extension structures for SiC power devices Solid-State Electronics. 45: 1659-1664. DOI: 10.1016/S0038-1101(01)00052-1 |
0.371 |
|
| 2001 |
Niu G, Juraver JB, Borgarino M, Jin Z, Cressler JD, Plana R, Llopis O, Mathew S, Zhang S, Clark S, Joseph AJ. Impact of gamma irradiation on the RF phase noise capability of UHV/CVD SiGe HBTs Solid-State Electronics. 45: 107-112. DOI: 10.1016/S0038-1101(00)00233-1 |
0.359 |
|
| 2000 |
Sheridan DC, Niu G, Merrett JN, Cressler JD, Ellis C, Tin CC, Siergiej RR. Simulation and fabrication of high-voltage 4H-SiC diodes with multiple floating guard ring termination Materials Science Forum. 338: 1339-1342. DOI: 10.4028/Www.Scientific.Net/Msf.338-342.1339 |
0.326 |
|
| 2000 |
Niu G, Cressler J, Shoga M, Jobe K, Chu P, Harame D. Simulation of SEE-induced charge collection in UHV/CVD SiGe HBTs Ieee Transactions On Nuclear Science. 47: 2682-2689. DOI: 10.1109/23.903826 |
0.379 |
|
| 2000 |
Zhang S, Niu G, Cressler J, Mathew S, Gogineni U, Clark S, Zampardi P, Pierson R. A comparison of the effects of gamma irradiation on SiGe HBT and GaAs HBT technologies Ieee Transactions On Nuclear Science. 47: 2521-2527. DOI: 10.1109/23.903802 |
0.352 |
|
| 2000 |
Cressler JD, Hamilton MC, Mullinax GS, Li Y, Niu G, Marshall CJ, Marshall PW, Kim HS, Palmer MJ, Joseph AJ, Freeman G. The effects of proton irradiation on the lateral and vertical scaling of UHV/CVD SiGe HBT BiCMOS technology Ieee Transactions On Nuclear Science. 47: 2515-2520. DOI: 10.1109/23.903801 |
0.323 |
|
| 2000 |
Niu G, Zhang S, Cressler JD, Joseph AJ, Fairbanks JS, Larson LE, Webster CS, Ansley WE, Harame DL. Noise modeling and SiGe profile design tradeoffs for RF applications [HBTs] Ieee Transactions On Electron Devices. 47: 2037-2044. DOI: 10.1109/16.877164 |
0.365 |
|
| 2000 |
Gogineni U, Cressler JD, Niu G, Harame DL. Hot electron and hot hole degradation of UHV/CVD SiGe HBT's Ieee Transactions On Electron Devices. 47: 1440-1448. DOI: 10.1109/16.848289 |
0.32 |
|
| 2000 |
Zhang G, Cressler JD, Niu G, Pinto A. Comparison of npn and pnp profile design tradeoffs for complementary SiGe HBT Technology Solid-State Electronics. 44: 1949-1954. DOI: 10.1016/S0038-1101(00)00165-9 |
0.35 |
|
| 1999 |
Niu G, Cressler JD, Mathew SJ, Ahlgren DC. Enhanced low-temperature corner current-carrying inherent to shallow trench isolation (STI) Ieee Electron Device Letters. 20: 520-522. DOI: 10.1109/55.791929 |
0.319 |
|
| 1999 |
Mathew SJ, Niu G, Dubbelday WB, Cressler JD, Ott JA, Chu JO, Mooney PM, Kavanagh KL, Meyerson BS, Lagnado I. Hole confinement and low-frequency noise in SiGe pFET's on silicon-on-sapphire Ieee Electron Device Letters. 20: 173-175. DOI: 10.1109/55.753757 |
0.36 |
|
| 1999 |
Mathew SJ, Niu G, Clark SD, Cressler JD, Palmer MJ, Dubbelday WB. Radiation-induced back-channel leakage in SiGe CMOS on silicon-on-sapphire (SOS) technology Ieee Transactions On Nuclear Science. 46: 1848-1853. DOI: 10.1109/23.819164 |
0.348 |
|
| 1999 |
Niu G, Mathew SJ, Banerjee G, Cressler JD, Clark SD, Palmer MJ, Subbanna S. Total dose effects on the shallow-trench isolation leakage current characteristics in a 0.35 /spl mu/m SiGe BiCMOS technology Ieee Transactions On Nuclear Science. 46: 1841-1847. DOI: 10.1109/23.819163 |
0.4 |
|
| 1999 |
Zhang S, Niu G, Cressler JD, Clark SD, Ahlgren DC. The effects of proton irradiation on the RF performance of SiGe HBTs Ieee Transactions On Nuclear Science. 46: 1716-1721. DOI: 10.1109/23.819144 |
0.319 |
|
| 1999 |
Banerjee G, Niu G, Cressler J, Clark S, Palmer M, Ahlgren D. Anomalous dose rate effects in gamma irradiated SiGe heterojunction bipolar transistors Ieee Transactions On Nuclear Science. 46: 1620-1626. DOI: 10.1109/23.819130 |
0.326 |
|
| 1999 |
Mathew SJ, Niu G, Dubbelday WB, Cressler JD. Characterization and profile optimization of SiGe pFETs on silicon-on-sapphire Ieee Transactions On Electron Devices. 46: 2323-2332. DOI: 10.1109/16.808073 |
0.384 |
|
| 1999 |
Niu G, Ansley WE, Zhang S, Cressler JD, Webster CS, Groves RA. Noise parameter optimization of UHV/CVD SiGe HBT's for RF and microwave applications Ieee Transactions On Electron Devices. 46: 1589-1598. DOI: 10.1109/16.777145 |
0.388 |
|
| 1999 |
Joseph AJ, Cressler JD, Richey DM, Niu G. Optimization of SiGe HBT's for operation at high current densities Ieee Transactions On Electron Devices. 46: 1347-1354. DOI: 10.1109/16.772475 |
0.383 |
|
| 1999 |
Niu G, Cressler JD, Gogineni U, Joseph AJ. A new common-emitter hybrid-/spl pi/ small-signal equivalent circuit for bipolar transistors with significant neutral base recombination Ieee Transactions On Electron Devices. 46: 1166-1173. DOI: 10.1109/16.766879 |
0.392 |
|
| 1999 |
Niu G, Cressler J, Zhang S, Gogineni U, Ahlgren D. Measurement of collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's Ieee Transactions On Electron Devices. 46: 1007-1015. DOI: 10.1109/16.760410 |
0.35 |
|
| 1998 |
Niu G, Cressler JD, Gogineni U, Harame DL. Collector-base junction avalanche multiplication effects in advanced UHV/CVD SiGe HBT's Ieee Electron Device Letters. 19: 288-290. DOI: 10.1109/55.704402 |
0.349 |
|
| 1998 |
Roldan JM, Niu G, Ansley WE, Cressler JD, Clark SD, Ahlgren DC. An investigation of the spatial location of proton-induced traps in SiGe HBTs Ieee Transactions On Nuclear Science. 45: 2424-2429. DOI: 10.1109/23.736481 |
0.358 |
|
| 1998 |
Niu G, Banerjee G, Cressler J, Roldan J, Clark S, Ahlgren D. Electrical probing of surface and bulk traps in proton-irradiated gate-assisted lateral PNP transistors Ieee Transactions On Nuclear Science. 45: 2361-2365. DOI: 10.1109/23.736455 |
0.376 |
|
| 1998 |
Niu G, Cressler JD. Quantifying neutral base recombination and the effects of collector-base junction traps in UHV/CVD SiGe HBT's Ieee Transactions On Electron Devices. 45: 2499-2504. DOI: 10.1109/16.735727 |
0.381 |
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| Show low-probability matches. |