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Fengyuan Shi, Ph.D. - Publications

Affiliations: 
2013 Materials Science University of Wisconsin, Madison, Madison, WI 
Area:
Materials Science Engineering
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25 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2019 Li X, Yang M, Jamali M, Shi F, Kang S, Jiang Y, Zhang X, Li H, Okatov S, Faleev S, Kalitsov A, Yu G, Voyles PM, Mryasov ON, Wang J. Heavy‐Metal‐Free, Low‐Damping, and Non‐Interface Perpendicular Fe 16 N 2 Thin Film and Magnetoresistance Device Physica Status Solidi (Rrl) – Rapid Research Letters. 13: 1900089. DOI: 10.1002/Pssr.201900089  0.528
2017 Fang Y, Jiang Y, Cherukara MJ, Shi F, Koehler K, Freyermuth G, Isheim D, Narayanan B, Nicholls AW, Seidman DN, Sankaranarayanan SKRS, Tian B. Alloy-assisted deposition of three-dimensional arrays of atomic gold catalyst for crystal growth studies. Nature Communications. 8: 2014. PMID 29222439 DOI: 10.1038/S41467-017-02025-X  0.327
2017 Hanson ED, Lajaunie L, Hao S, Myers BD, Shi F, Murthy AA, Wolverton C, Arenal R, Dravid VP. Systematic Study of Oxygen Vacancy Tunable Transport Properties of Few‐Layer MoO 3− x Enabled by Vapor‐Based Synthesis Advanced Functional Materials. 27: 1605380. DOI: 10.1002/Adfm.201605380  0.33
2016 Cain JD, Shi F, Wu J, Dravid VP. On the Growth Mechanism of Transition Metal Dichalcogenide Monolayers: The Role of Self-Seeding Fullerene Nuclei. Acs Nano. PMID 27138735 DOI: 10.1021/Acsnano.6B01705  0.315
2016 Hanson ED, Shi F, Chasapis TC, Kanatzidis MG, Dravid VP. Two-dimensional bismuth-rich nanosheets through the evaporative thinning of Se-doped Bi2Te3 Journal of Crystal Growth. 436: 138-144. DOI: 10.1016/J.Jcrysgro.2015.11.033  0.325
2016 Cain JD, Hanson ED, Shi F, Dravid VP. Emerging opportunities in the two-dimensional chalcogenide systems and architecture Current Opinion in Solid State & Materials Science. 20: 374-387. DOI: 10.1016/J.Cossms.2016.06.001  0.307
2015 Yu X, Zeng L, Zhou N, Guo P, Shi F, Buchholz DB, Ma Q, Yu J, Dravid VP, Chang RP, Bedzyk M, Marks TJ, Facchetti A. Ultra-flexible, "invisible" thin-film transistors enabled by amorphous metal oxide/polymer channel layer blends. Advanced Materials (Deerfield Beach, Fla.). 27: 2390-9. PMID 25712894 DOI: 10.1002/Adma.201405400  0.333
2015 Fang L, Im J, Stoumpos CC, Shi F, Dravid V, Leroux M, Freeman AJ, Kwok WK, Chung DY, Kanatzidis M. Two-dimensional mineral [Pb2BiS3][AuTe2]: high-mobility charge carriers in single-atom-thick layers. Journal of the American Chemical Society. 137: 2311-7. PMID 25612093 DOI: 10.1021/Ja5111688  0.323
2015 Liu H, Kawami T, Moges K, Uemura T, Yamamoto M, Shi F, Voyles PM. Influence of film composition in quaternary Heusler alloy Co2(Mn,Fe)Si thin films on tunnelling magnetoresistance of Co2(Mn,Fe)Si/MgO-based magnetic tunnel junctions Journal of Physics D: Applied Physics. 48: 164001. DOI: 10.1088/0022-3727/48/16/164001  0.563
2014 Kim IS, Sangwan VK, Jariwala D, Wood JD, Park S, Chen KS, Shi F, Ruiz-Zepeda F, Ponce A, Jose-Yacaman M, Dravid VP, Marks TJ, Hersam MC, Lauhon LJ. Influence of stoichiometry on the optical and electrical properties of chemical vapor deposition derived MoS2. Acs Nano. 8: 10551-8. PMID 25223821 DOI: 10.1021/Nn503988X  0.32
2014 Li G, Honda Y, Liu H, Matsuda K, Arita M, Uemura T, Yamamoto M, Miura Y, Shirai M, Saito T, Shi F, Voyles PM. Effect of nonstoichiometry on the half-metallic character of Co2MnSi investigated through saturation magnetization and tunneling magnetoresistance ratio Physical Review B. 89. DOI: 10.1103/Physrevb.89.014428  0.49
2014 Alba-Rubio AC, O'Neill BJ, Shi F, Akatay C, Canlas C, Li T, Winans R, Elam JW, Stach EA, Voyles PM, Dumesic JA. Pore structure and bifunctional catalyst activity of overlayers applied by atomic layer deposition on copper nanoparticles Acs Catalysis. 4: 1554-1557. DOI: 10.1021/Cs500330P  0.57
2013 O'Neill BJ, Jackson DH, Crisci AJ, Farberow CA, Shi F, Alba-Rubio AC, Lu J, Dietrich PJ, Gu X, Marshall CL, Stair PC, Elam JW, Miller JT, Ribeiro FH, Voyles PM, et al. Stabilization of copper catalysts for liquid-phase reactions by atomic layer deposition. Angewandte Chemie (International Ed. in English). 52: 13808-12. PMID 24282166 DOI: 10.1002/Anie.201308245  0.549
2013 Shi F, Liu H, Yamamoto M, Voyles P. MnMn/O Interface Termination at the Co2MnαSi/MgO Interface in Magnetic Tunnel Junctions Investigated by Scanning Transmission Electron Microscopy Microscopy and Microanalysis. 19: 336-337. DOI: 10.1017/S143192761300367X  0.531
2013 Xiang H, Shi FY, Rzchowski MS, Voyles PM, Chang YA. Reactive sputtering of (Co,Fe) nitride thin films on TiN-bufferd Si Applied Physics a: Materials Science and Processing. 110: 487-492. DOI: 10.1007/S00339-012-7251-5  0.526
2013 O'Neill BJ, Jackson DHK, Crisci AJ, Farberow CA, Shi F, Alba-Rubio AC, Lu J, Dietrich PJ, Gu X, Marshall CL, Stair PC, Elam JW, Miller JT, Ribeiro FH, Voyles PM, et al. Back Cover: Stabilization of Copper Catalysts for Liquid-Phase Reactions by Atomic Layer Deposition (Angew. Chem. Int. Ed. 51/2013) Angewandte Chemie International Edition. 52: 13824-13824. DOI: 10.1002/Anie.201309934  0.535
2013 O'Neill BJ, Jackson DHK, Crisci AJ, Farberow CA, Shi F, Alba-Rubio AC, Lu J, Dietrich PJ, Gu X, Marshall CL, Stair PC, Elam JW, Miller JT, Ribeiro FH, Voyles PM, et al. Rücktitelbild: Stabilization of Copper Catalysts for Liquid-Phase Reactions by Atomic Layer Deposition (Angew. Chem. 51/2013) Angewandte Chemie. 125: 14068-14068. DOI: 10.1002/Ange.201309934  0.535
2012 Shi F, Xiang H, Rzchowski MS, Chang YA, Voyles PM. High-quality, smooth Fe3O4 thin films on Si by controlled oxidation of Fe in CO/CO2 Materials Research Society Symposium Proceedings. 1430: 61-66. DOI: 10.1557/Opl.2012.899  0.598
2012 Shi F, Xiang H, Chang Y, Voyles P, Rzchowski M. STEM and STEM EELS Characterization of Low Defect Density, Smooth Fe3O4 Thin Films on Buffered Si by Kinetically Controlled Selective Oxidation Microscopy and Microanalysis. 18: 322-323. DOI: 10.1017/S1431927612003467  0.541
2012 Berkels B, Sharpley R, Binev P, Yankovich A, Shi F, Voyles P, Dahmen W. High Precision STEM Imaging by Non-Rigid Alignment and Averaging of a Series of Short Exposures Microscopy and Microanalysis. 18: 300-301. DOI: 10.1017/S1431927612003352  0.479
2012 Shi F, Xiang H, Yang JJ, Rzchowski MS, Chang YA, Voyles PM. Inverse TMR in a nominally symmetric CoFe/AlO x/CoFe junction induced by interfacial Fe 3O 4 investigated by STEM-EELS Journal of Magnetism and Magnetic Materials. 324: 1837-1844. DOI: 10.1016/J.Jmmm.2012.01.012  0.551
2012 Reyes-Luyanda D, Flores-Cruz J, Morales-Pérez PJ, Encarnación-Gómez LG, Shi F, Voyles PM, Cardona-Martínez N. Bifunctional materials for the catalytic conversion of cellulose into soluble renewable biorefinery feedstocks Topics in Catalysis. 55: 148-161. DOI: 10.1007/S11244-012-9791-5  0.509
2011 Xiang H, Shi FY, Rzchowski MS, Voyles PM, Chang YA. Epitaxial growth and thermal stability of Fe 4N film on TiN buffered Si(001) substrate Journal of Applied Physics. 109. DOI: 10.1063/1.3556919  0.521
2011 Xiang H, Shi FY, Zhang C, Rzchowski MS, Voyles PM, Chang YA. Synthesis of Fe3O4 thin films by selective oxidation with controlled oxygen chemical potential Scripta Materialia. 65: 739-742. DOI: 10.1016/J.Scriptamat.2011.07.026  0.533
2010 Xiang H, Shi F, Rzchowski MS, Voyles PM, Chang YA. Epitaxial growth and magnetic properties of Fe3 O4 films on TiN buffered Si(001), Si(110), and Si(111) substrates Applied Physics Letters. 97. DOI: 10.1063/1.3484278  0.581
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