Year |
Citation |
Score |
2020 |
Rudderham C, Maassen J. Analysis of simple scattering models on the thermoelectric performance of analytical electron dispersions Journal of Applied Physics. 127: 65105. DOI: 10.1063/1.5138651 |
0.359 |
|
2019 |
Askarpour V, Maassen J. Unusual thermoelectric transport anisotropy in quasi-two-dimensional rhombohedral GeTe Physical Review B. 100: 75201. DOI: 10.1103/Physrevb.100.075201 |
0.425 |
|
2019 |
Maassen J, Askarpour V. Phonon transport across a Si-Ge interface: the role of inelastic bulk scattering Apl Materials. 7: 13203. DOI: 10.1063/1.5051538 |
0.427 |
|
2019 |
Witkoske E, Wang X, Maassen J, Lundstrom M. Universal behavior of the thermoelectric figure of merit, zT, vs. quality factor Materials Today Physics. 8: 43-48. DOI: 10.1016/J.Mtphys.2018.12.005 |
0.392 |
|
2019 |
Emanuel M, Bhouri M, Furlotte J, Groulx D, Maassen J. Temperature fields generated by a circular heat source (CHS) in an infinite isotropic medium: Treatment of contact resistances with application to thin films International Journal of Heat and Mass Transfer. 137: 677-689. DOI: 10.1016/J.Ijheatmasstransfer.2019.03.115 |
0.307 |
|
2018 |
Kim S, Maassen J, Lee J, Kim SM, Han G, Kwon J, Hong S, Park J, Liu N, Park YC, Omkaram I, Rhyee JS, Hong YK, Yoon Y. Interstitial Mo-Assisted Photovoltaic Effect in Multilayer MoSe2 Phototransistors. Advanced Materials (Deerfield Beach, Fla.). PMID 29369423 DOI: 10.1002/Adma.201705542 |
0.355 |
|
2018 |
Luo Z, Tian J, Huang S, Srinivasan M, Maassen J, Chen YP, Xu X. Large Enhancement of Thermal Conductivity and Lorenz Number in Topological Insulator Thin Films. Acs Nano. PMID 29361229 DOI: 10.1021/Acsnano.7B06430 |
0.365 |
|
2018 |
Wang X, Askarpour V, Maassen J, Lundstrom M. On the calculation of Lorenz numbers for complex thermoelectric materials Journal of Applied Physics. 123: 55104. DOI: 10.1063/1.5009939 |
0.386 |
|
2017 |
Wang K, Stanev TK, Valencia D, Charles J, Henning A, Sangwan VK, Lahiri A, Mejia D, Sarangapani P, Povolotskyi M, Afzalian A, Maassen J, Klimeck G, Hersam MC, Lauhon LJ, et al. Control of interlayer physics in 2H transition metal dichalcogenides Journal of Applied Physics. 122: 224302. DOI: 10.1063/1.5005958 |
0.332 |
|
2017 |
Witkoske E, Wang X, Lundstrom M, Askarpour V, Maassen J. Thermoelectric band engineering: The role of carrier scattering Journal of Applied Physics. 122: 175102. DOI: 10.1063/1.4994696 |
0.357 |
|
2017 |
Abarbanel D, Maassen J. Modeling quasi-ballistic transient thermal transport with spatially sinusoidal heating: A McKelvey-Shockley flux approach Journal of Applied Physics. 121: 204305. DOI: 10.1063/1.4984202 |
0.416 |
|
2017 |
Kaiser J, Feng T, Maassen J, Wang X, Ruan X, Lundstrom M. Thermal transport at the nanoscale: A Fourier's law vs. phonon Boltzmann equation study Journal of Applied Physics. 121: 044302. DOI: 10.1063/1.4974872 |
0.377 |
|
2016 |
Dunn J, Antillon E, Maassen J, Lundstrom M, Strachan A. Role of energy distribution in contacts on thermal transport in Si: A molecular dynamics study Journal of Applied Physics. 120: 225112. DOI: 10.1063/1.4971254 |
0.347 |
|
2016 |
Kayyalha M, Maassen J, Lundstrom M, Shi L, Chen YP. Gate-tunable and thickness-dependent electronic and thermoelectric transport in few-layer MoS2 Journal of Applied Physics. 120. DOI: 10.1063/1.4963364 |
0.338 |
|
2016 |
Maassen J, Lundstrom M. Modeling ballistic effects in frequency-dependent transient thermal transport using diffusion equations Journal of Applied Physics. 119: 95102. DOI: 10.1063/1.4942836 |
0.355 |
|
2015 |
Luo Z, Maassen J, Deng Y, Du Y, Garrelts RP, Lundstrom MS, Ye PD, Xu X. Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus. Nature Communications. 6: 8572. PMID 26472191 DOI: 10.1038/Ncomms9572 |
0.365 |
|
2015 |
Maassen J, Lundstrom M. A simple Boltzmann transport equation for ballistic to diffusive transient heat transport Journal of Applied Physics. 117: 135102. DOI: 10.1063/1.4916245 |
0.388 |
|
2015 |
Maassen J, Lundstrom MS. Steady-state heat transport: Ballistic-to-diffusive with Fourier's law Journal of Applied Physics. 117: 35104. DOI: 10.1063/1.4905590 |
0.419 |
|
2013 |
Pettes MT, Maassen J, Jo I, Lundstrom MS, Shi L. Effects of surface band bending and scattering on thermoelectric transport in suspended bismuth telluride nanoplates. Nano Letters. 13: 5316-22. PMID 24164564 DOI: 10.1021/Nl402828S |
0.403 |
|
2013 |
Burmistrova PV, Maassen J, Favaloro T, Saha B, Salamat S, Rui Koh Y, Lundstrom MS, Shakouri A, Sands TD. Thermoelectric properties of epitaxial ScN films deposited by reactive magnetron sputtering onto MgO(001) substrates Journal of Applied Physics. 113. DOI: 10.1063/1.4801886 |
0.35 |
|
2013 |
Maassen J, Jeong C, Baraskar A, Rodwell M, Lundstrom M. Full band calculations of the intrinsic lower limit of contact resistivity Applied Physics Letters. 102. DOI: 10.1063/1.4798238 |
0.365 |
|
2012 |
Maassen J, Guo H. Suppressing leakage by localized doping in Si nanotransistor channels. Physical Review Letters. 109: 266803. PMID 23368599 DOI: 10.1103/Physrevlett.109.266803 |
0.426 |
|
2012 |
Oliver DJ, Maassen J, El Ouali M, Paul W, Hagedorn T, Miyahara Y, Qi Y, Guo H, Grütter P. Conductivity of an atomically defined metallic interface. Proceedings of the National Academy of Sciences of the United States of America. 109: 19097-102. PMID 23129661 DOI: 10.1073/Pnas.1208699109 |
0.46 |
|
2011 |
Maassen J, Ji W, Guo H. Graphene spintronics: the role of ferromagnetic electrodes. Nano Letters. 11: 151-5. PMID 21155559 DOI: 10.1021/Nl1031919 |
0.403 |
|
2010 |
Bennett SD, Maassen J, Clerk AA. Scattering approach to backaction in coherent nanoelectromechanical systems. Physical Review Letters. 105: 217206. PMID 21231350 DOI: 10.1103/Physrevlett.105.217206 |
0.343 |
|
2010 |
Maassen J, Ji W, Guo H. First principles study of electronic transport through a Cu(111)∣graphene junction Applied Physics Letters. 97: 142105. DOI: 10.1063/1.3496490 |
0.422 |
|
2009 |
Maassen J, Zahid F, Guo H. Effects of dephasing in molecular transport junctions using atomistic first principles Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.125423 |
0.478 |
|
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