Year |
Citation |
Score |
2020 |
Kenane N, Grove MA, Perkins CK, Reynolds TR, Cheong PH, Keszler DA. Hydrolysis and Condensation of -BuSnCl: Enabling Deposition of Smooth Metal Oxide Photoresist Thin Films. Inorganic Chemistry. PMID 32105458 DOI: 10.1021/Acs.Inorgchem.9B03589 |
0.834 |
|
2019 |
Wu F, Harper BJ, Marsh DA, Saha S, Diulus T, Amador JM, Keszler DA, Herman GS, Maddux BLS, Harper SL. Monoalkyl Tin Nano-cluster Films Reveal a Low Environmental Impact Under Simulated Natural Conditions. Environmental Toxicology and Chemistry. PMID 31441966 DOI: 10.1002/Etc.4580 |
0.338 |
|
2018 |
Perkins CK, Jenkins M, Chiang TH, Mansergh RH, Gouliouk V, Kenane N, Wager J, Conley JF, Keszler DA. Demonstration of Fowler-Nordheim tunneling in simple solution-processed thin film. Acs Applied Materials & Interfaces. PMID 30259732 DOI: 10.1021/Acsami.8B08986 |
0.82 |
|
2018 |
Cui J, Kast MG, Hammann BA, Afriyie Y, Woods KN, Plassmeyer PN, Perkins CK, Ma ZL, Keszler DA, Page CJ, Boettcher SW, Hayes SE. Aluminum Oxide Thin Films from Aqueous Solutions: Insights from Solid-State NMR and Dielectric Response Chemistry of Materials. 30: 7456-7463. DOI: 10.1021/Acs.Chemmater.7B05078 |
0.801 |
|
2017 |
Buchanan JC, Fast DB, Hanken BE, Mustard TJL, Laurita G, Chiang TH, Keszler DA, Subramanian MA, Wager JF, Dolgos MR, Rustad JR, Cheong PH. Structural convergence properties of amorphous InGaZnO4 from simulated liquid-quench methods. Dalton Transactions (Cambridge, England : 2003). PMID 29068444 DOI: 10.1039/C7Dt02181J |
0.529 |
|
2017 |
Wills LA, Qu X, Chang IY, Mustard TJL, Keszler DA, Persson KA, Cheong PH. Group additivity-Pourbaix diagrams advocate thermodynamically stable nanoscale clusters in aqueous environments. Nature Communications. 8: 15852. PMID 28643782 DOI: 10.1038/Ncomms15852 |
0.54 |
|
2017 |
Perkins CK, Eitrheim ES, Fulton BL, Fullmer LB, Colla CA, Park DH, Oliveri AF, Hutchison JE, Nyman M, Casey WH, Forbes TZ, Johnson DW, Keszler DA. Synthesis of an Aluminum Hydroxide Octamer through a Simple Dissolution Method. Angewandte Chemie (International Ed. in English). PMID 28508441 DOI: 10.1002/Anie.201702318 |
0.722 |
|
2017 |
McGlone JM, Olsen KR, Stickle WF, Abbott JE, Pugliese RA, Long GS, Keszler DA, Wager JF. TaWSi amorphous metal thin films: composition tuning to improve thermal stability Mrs Communications. 7: 715-720. DOI: 10.1557/Mrc.2017.77 |
0.305 |
|
2017 |
Cochran EA, Park D, Kast MG, Enman LJ, Perkins CK, Mansergh RH, Keszler DA, Johnson DW, Boettcher SW. Role of Combustion Chemistry in Low-Temperature Deposition of Metal Oxide Thin Films from Solution Chemistry of Materials. 29: 9480-9488. DOI: 10.1021/Acs.Chemmater.7B03618 |
0.827 |
|
2017 |
Woods KN, Plassmeyer PN, Park D, Enman LJ, Grealish AK, Kirk BL, Boettcher SW, Keszler DA, Page CJ. Low-Temperature Steam Annealing of Metal Oxide Thin Films from Aqueous Precursors: Enhanced Counterion Removal, Resistance to Water Absorption, and Dielectric Constant Chemistry of Materials. 29: 8531-8538. DOI: 10.1021/Acs.Chemmater.7B03585 |
0.455 |
|
2017 |
Fulton BL, Perkins CK, Mansergh RH, Jenkins MA, Gouliouk V, Jackson MN, Ramos JC, Rogovoy NM, Gutierrez-Higgins MT, Boettcher SW, Conley JF, Keszler DA, Hutchison JE, Johnson DW. Minerals to Materials: Bulk Synthesis of Aqueous Aluminum Clusters and Their Use as Precursors for Metal Oxide Thin Films Chemistry of Materials. 29: 7760-7765. DOI: 10.1021/Acs.Chemmater.7B02106 |
0.798 |
|
2017 |
Stewart KA, Gouliouk V, Keszler DA, Wager JF. Sputtered boron indium oxide thin-film transistors Solid-State Electronics. 137: 80-84. DOI: 10.1016/J.Sse.2017.08.004 |
0.319 |
|
2016 |
Murari NM, Mansergh RH, Huang Y, Kast MG, Keszler DA, Conley JF. Aerosol jet fog (ajFOG) deposition of aluminum oxide phosphate thin films from an aqueous fog Journal of Materials Research. 31: 3303-3312. DOI: 10.1557/Jmr.2016.341 |
0.828 |
|
2016 |
Perkins CK, Mansergh RH, Ramos JC, Nanayakkara CE, Park D, Goberna-Ferrón S, Fullmer LB, Arens JT, Gutierrez-Higgins MT, Jones YR, Lopez JI, Rowe TM, Whitehurst DM, Nyman M, Chabal YJ, ... Keszler DA, et al. Low-index, smooth Al_2O_3 films by aqueous solution process Optical Materials Express. 7: 273. DOI: 10.1364/Ome.7.000273 |
0.828 |
|
2016 |
Mansergh RH, Fullmer LB, Park DH, Nyman M, Keszler DA. Reaction Pathway: Aqueous Hexatantalate Clusters to High-Density Tantalum Oxide Nanofilms Chemistry of Materials. 28: 1553-1558. DOI: 10.1021/Acs.Chemmater.6B00078 |
0.835 |
|
2016 |
Perkins CK, Mansergh RH, Park DH, Nanayakkara CE, Ramos JC, Decker SR, Huang Y, Chabal YJ, Keszler DA. Aqueous process to limit hydration of thin-film inorganic oxides Solid State Sciences. 61: 106-110. DOI: 10.1016/J.Solidstatesciences.2016.09.012 |
0.817 |
|
2015 |
Zhu L, Saha S, Liu W, Wang Y, Keszler DA, Fang C. Simultaneous solution-based generation and characterization of crystalline bismuth thin film by femtosecond laser spectroscopy Applied Physics Letters. 107. DOI: 10.1063/1.4928483 |
0.392 |
|
2015 |
Anderson JT, Wang W, Jiang K, Gustafsson T, Xu C, Gafunkel EL, Keszler DA. Chemically amplified dehydration of thin oxide films Acs Sustainable Chemistry and Engineering. 3: 1081-1085. DOI: 10.1021/Sc500824A |
0.57 |
|
2015 |
Nadarajah A, Wu MZB, Archila K, Kast MG, Smith AM, Chiang TH, Keszler DA, Wager JF, Boettcher SW. Amorphous In-Ga-Zn Oxide Semiconducting Thin Films with High Mobility from Electrochemically Generated Aqueous Nanocluster Inks Chemistry of Materials. 27: 5587-5596. DOI: 10.1021/Acs.Chemmater.5B01813 |
0.439 |
|
2015 |
Fullmer LB, Mansergh RH, Zakharov LN, Keszler DA, Nyman M. Nb2O5 and Ta2O5 Thin Films from Polyoxometalate Precursors: A Single Proton Makes a Difference Crystal Growth and Design. 15: 3885-3892. DOI: 10.1021/Acs.Cgd.5B00508 |
0.835 |
|
2015 |
McGlone JM, Olsen KR, Stickle WF, Abbott JE, Pugliese RA, Long GS, Keszler DA, Wager JF. Ta-based amorphous metal thin films Journal of Alloys and Compounds. 650: 102-105. DOI: 10.1016/J.Jallcom.2015.07.226 |
0.326 |
|
2014 |
Oleksak RP, Ruther RE, Luo F, Fairley KC, Decker SR, Stickle WF, Johnson DW, Garfunkel EL, Herman GS, Keszler DA. Chemical and structural investigation of high-resolution patterning with HafSO(x). Acs Applied Materials & Interfaces. 6: 2917-21. PMID 24502280 DOI: 10.1021/Am405463U |
0.396 |
|
2014 |
Amador JM, Decker SR, Lucchini SE, Ruther RE, Keszler DA. Patterning chemistry of HafSOx photoresist Proceedings of Spie - the International Society For Optical Engineering. 9051. DOI: 10.1117/12.2046605 |
0.395 |
|
2014 |
Smith SW, Wang W, Keszler DA, Conley JF. Solution based prompt inorganic condensation and atomic layer deposition of Al2O3 films: A side-by-side comparison Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 32. DOI: 10.1116/1.4874806 |
0.424 |
|
2014 |
Muir SW, Cowell EW, Wang W, Wager JF, Keszler DA. Effects of oxygen incorporation on the physical properties of amorphous metal thin films Journal of Physical Chemistry C. 118: 9647-9651. DOI: 10.1021/Jp412823R |
0.342 |
|
2014 |
Knutson CC, Jackson MN, Beekman M, Carnes ME, Johnson DW, Johnson DC, Keszler DA. Mentoring graduate students in research and teaching by utilizing research as a template Journal of Chemical Education. 91: 200-205. DOI: 10.1021/Ed400143A |
0.574 |
|
2014 |
Wager JF, Yeh B, Hoffman RL, Keszler DA. An amorphous oxide semiconductor thin-film transistor route to oxide electronics Current Opinion in Solid State and Materials Science. 18: 53-61. DOI: 10.1016/J.Cossms.2013.07.002 |
0.323 |
|
2014 |
Flynn B, Kim D, Clark BL, Telecky A, Arnadottir L, Szanyi J, Keszler DA, Herman GS. In-situ characterization of aqueous-based hafnium oxide hydroxide sulfate thin films Surface and Interface Analysis. 46: 210-215. DOI: 10.1002/Sia.5205 |
0.814 |
|
2013 |
Wang W, Liu W, Chang IY, Wills LA, Zakharov LN, Boettcher SW, Cheong PH, Fang C, Keszler DA. Electrolytic synthesis of aqueous aluminum nanoclusters and in situ characterization by femtosecond Raman spectroscopy and computations. Proceedings of the National Academy of Sciences of the United States of America. 110: 18397-401. PMID 24167254 DOI: 10.1073/Pnas.1315396110 |
0.543 |
|
2013 |
Wang W, Chang IY, Zakharov L, Cheong PH, Keszler DA. [Sc2(μ-OH)2(H2O)6(NO3)2](NO3)2: aqueous synthesis and characterization. Inorganic Chemistry. 52: 1807-11. PMID 23350751 DOI: 10.1021/Ic301814Z |
0.55 |
|
2013 |
Jiang K, Meyers ST, Anderson MD, Johnson DC, Keszler DA. Functional ultrathin films and nanolaminates from aqueous solutions Chemistry of Materials. 25: 210-214. DOI: 10.1021/Cm303268P |
0.82 |
|
2013 |
Yu L, Kokenyesi RS, Keszler DA, Zunger A. Inverse design of high absorption thin-film photovoltaic materials Advanced Energy Materials. 3: 43-48. DOI: 10.1002/aenm.201200538 |
0.343 |
|
2012 |
Sundholm ES, Presley RE, Hoshino K, Knutson CC, Hoffman RL, Mourey DA, Keszler DA, Wager JF. Passivation of amorphous oxide semiconductors utilizing a zinc-tin-silicon-oxide barrier layer Ieee Electron Device Letters. 33: 836-838. DOI: 10.1109/Led.2012.2191530 |
0.688 |
|
2012 |
Cowell EW, Knutson CC, Kuhta NA, Stickle W, Keszler DA, Wager JF. Engineering anisotropic dielectric response through amorphous laminate structures Physica Status Solidi (a) Applications and Materials Science. 209: 777-784. DOI: 10.1002/Pssa.201127616 |
0.701 |
|
2012 |
Wager JF, Hoshino K, Sundholm ES, Presley RE, Ravichandran R, Knutson CC, Keszler DA, Hoffman RL, Mourey DA, Robertson J. A framework for assessing amorphous oxide semiconductor thin-film transistor passivation Journal of the Society For Information Display. 20: 589-595. DOI: 10.1002/Jsid.120 |
0.661 |
|
2011 |
Cowell EW, Alimardani N, Knutson CC, Conley JF, Keszler DA, Gibbons BJ, Wager JF. Advancing MIM electronics: amorphous metal electrodes. Advanced Materials (Deerfield Beach, Fla.). 23: 74-8. PMID 20976677 DOI: 10.1002/Adma.201002678 |
0.614 |
|
2011 |
Stowers JK, Telecky A, Kocsis M, Clark BL, Keszler DA, Grenville A, Anderson CN, Naulleau PP. Directly patterned inorganic hardmask for EUV lithography Proceedings of Spie - the International Society For Optical Engineering. 7969. DOI: 10.1117/12.879542 |
0.775 |
|
2011 |
Kim KM, Kim CW, Heo JS, Na H, Lee JE, Park CB, Bae JU, Kim CD, Jun M, Hwang YK, Meyers ST, Grenville A, Keszler DA. Competitive device performance of low-temperature and all-solution- processed metal-oxide thin-film transistors Applied Physics Letters. 99. DOI: 10.1063/1.3665912 |
0.77 |
|
2011 |
Foster DH, Jieratum V, Kykyneshi R, Keszler DA, Schneider G. Electronic and optical properties of potential solar absorber Cu 3PSe4 Applied Physics Letters. 99. DOI: 10.1063/1.3656760 |
0.748 |
|
2011 |
Jiang K, Anderson JT, Hoshino K, Li D, Wager JF, Keszler DA. Low-energy path to dense HfO2 thin films with aqueous precursor Chemistry of Materials. 23: 945-952. DOI: 10.1021/Cm102082J |
0.585 |
|
2011 |
Xie S, Wang W, Keszler D. Electron-Beam Induced Crystallization of Al2O3 Film Generated from Inorganic Aqueous Precursors Microscopy and Microanalysis. 17: 494-495. DOI: 10.1017/s1431927611003345 |
0.305 |
|
2011 |
Alemayehu M, Davis JE, Jackson M, Lessig B, Smith L, Sumega JD, Knutson C, Beekman M, Johnson DC, Keszler DA. Tunable dielectric thin films by aqueous, inorganic solution-based processing Solid State Sciences. 13: 2037-2040. DOI: 10.1016/J.Solidstatesciences.2011.09.007 |
0.744 |
|
2011 |
Zakutayev A, Newhouse PF, Kykyneshi R, Hersh PA, Keszler DA, Tate J. Pulsed laser deposition of BiCuOSe thin films Applied Physics a: Materials Science and Processing. 102: 485-492. DOI: 10.1007/S00339-010-5946-Z |
0.384 |
|
2011 |
Yu L, Lany S, Kykyneshi R, Jieratum V, Ravichandran R, Pelatt B, Altschul E, Platt HAS, Wager JF, Keszler DA, Zunger A. Iron chalcogenide photovoltaic absorbers Advanced Energy Materials. 1: 748-753. DOI: 10.1002/Aenm.201100351 |
0.783 |
|
2010 |
Telecky A, Xie P, Stowers J, Grenville A, Smith B, Keszler DA. Photopatternable inorganic hardmask Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C6S19-C6S22. DOI: 10.1116/1.3507889 |
0.77 |
|
2010 |
Weiss DN, Yuan HC, Lee BG, Branz HM, Meyers ST, Grenville A, Keszler DA. Nanoimprinting for diffractive light trapping in solar cells Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: C6M98-C6M103. DOI: 10.1116/1.3498754 |
0.731 |
|
2010 |
Weiss DN, Meyers ST, Keszler DA. All-inorganic thermal nanoimprint process Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 823-828. DOI: 10.1116/1.3463454 |
0.739 |
|
2010 |
Cowell EW, Knutson CC, Wager JF, Keszler DA. Amorphous metal/oxide nanolaminate Acs Applied Materials and Interfaces. 2: 1811-1813. DOI: 10.1021/Am100283M |
0.743 |
|
2010 |
Zakutayev A, McIntyre DH, Schneider G, Kykyneshi R, Keszler DA, Park CH, Tate J. Tunable properties of wide-band gap p-type BaCu(Ch1 - XChx′)F (Ch = S, Se, Te) thin-film solid solutions Thin Solid Films. 518: 5494-5500. DOI: 10.1016/J.Tsf.2010.04.027 |
0.32 |
|
2010 |
Heo JS, Kim J, Choi S, Park KS, Kim CD, Hwang YK, Chung IJ, Meyers ST, Anderson JT, Clark BC, Greer M, Jiang K, Grenville A, Keszler DA. 17.4L: Late-news paper: Contact resistance and process integration effects on high-performance oxide TFTs with solution-deposited semiconductor and gate dielectric layers 48th Annual Sid Symposium, Seminar, and Exhibition 2010, Display Week 2010. 1: 241-244. |
0.739 |
|
2010 |
Heo JS, Kim J, Choi S, Park KS, Kim CD, Hwang YK, Chung IJ, Meyers ST, Anderson JT, Clark BC, Greer M, Jiang K, Grenville A, Keszler DA. 17.4L: Late-news paper: Contact resistance and process integration effects on high-performance oxide TFTs with solution-deposited semiconductor and gate dielectric layers 48th Annual Sid Symposium, Seminar, and Exhibition 2010, Display Week 2010. 1: 241-244. |
0.739 |
|
2009 |
Newhouse PF, Hersh PA, Zakutayev A, Richard A, Platt HAS, Keszler DA, Tate J. Thin film preparation and characterization of wide band gap Cu3TaQ4 (Q = S or Se) p-type semiconductors Thin Solid Films. 517: 2473-2476. DOI: 10.1016/J.Tsf.2008.11.020 |
0.435 |
|
2009 |
Jiang K, Zakutayev A, Stowers J, Anderson MD, Tate J, McIntyre DH, Johnson DC, Keszler DA. Low-temperature, solution processing of TiO2 thin films and fabrication of multilayer dielectric optical elements Solid State Sciences. 11: 1692-1699. DOI: 10.1016/J.Solidstatesciences.2009.05.026 |
0.82 |
|
2009 |
Stowers J, Keszler DA. High resolution, high sensitivity inorganic resists Microelectronic Engineering. 86: 730-733. DOI: 10.1016/J.Mee.2008.11.034 |
0.705 |
|
2009 |
Lai YC, Yu CC, Chang FW, Lin LY, Wang MC, Gu HH, Huang CY, Hsu CC, Liu SC, Lai YH, Lai SH, Chiang SC, Meyers ST, Anderson JT, Grenville A, ... Keszler DA, et al. Solution processed IGZO-TFTs with various gate insulator layer applied to active matrix LCD Idw '09 - Proceedings of the 16th International Display Workshops. 3: 1697-1700. |
0.701 |
|
2008 |
Meyers ST, Anderson JT, Hung CM, Thompson J, Wager JF, Keszler DA. Aqueous inorganic inks for low-temperature fabrication of ZnO TFTs. Journal of the American Chemical Society. 130: 17603-9. PMID 19053193 DOI: 10.1021/Ja808243K |
0.799 |
|
2008 |
Mensinger ZL, Gatlin JT, Meyers ST, Zakharov LN, Keszler DA, Johnson DW. Synthesis of heterometallic group 13 nanoclusters and inks for oxide thin-film transistors. Angewandte Chemie (International Ed. in English). 47: 9484-6. PMID 18973216 DOI: 10.1002/Anie.200803514 |
0.778 |
|
2008 |
Tate J, Newhouse PF, Kykyneshi R, Hersh PA, Kinney J, McIntyre DH, Keszler DA. Chalcogen-based transparent conductors Thin Solid Films. 516: 5795-5799. DOI: 10.1016/J.Tsf.2007.10.073 |
0.389 |
|
2008 |
Kykyneshi R, McIntyre DH, Tate J, Park CH, Keszler DA. Electrical and optical properties of epitaxial transparent conductive BaCuTeF thin films deposited by pulsed laser deposition Solid State Sciences. 10: 921-927. DOI: 10.1016/J.Solidstatesciences.2007.10.005 |
0.394 |
|
2008 |
Kanatzidis MG, Poeppelmeier KR, Bobev S, Guloy AM, Hwu SJ, Lachgar A, Latturner SE, Raymond, Schaak E, Seo DK, Sevov SC, Stein A, Dabrowski B, Greedan JE, Greenblatt M, ... ... Keszler DA, et al. Report from the third workshop on future directions of solid-state chemistry: The status of solid-state chemistry and its impact in the physical sciences Progress in Solid State Chemistry. 36: 1-133. DOI: 10.1016/J.Progsolidstchem.2007.02.002 |
0.549 |
|
2008 |
Keszler DA, Anderson JT, Meyers ST. Oxide Dielectric Films for Active Electronics Solution Processing of Inorganic Materials. 109-129. DOI: 10.1002/9780470407790.ch4 |
0.781 |
|
2007 |
Meyers ST, Anderson JT, Hong D, Hung CM, Wager JF, Keszler DA. Solution-processed aluminum oxide phosphate thin-film dielectrics Chemistry of Materials. 19: 4023-4029. DOI: 10.1021/Cm0702619 |
0.808 |
|
2007 |
Park CH, Kykyneshi R, Yokochi A, Tate J, Keszler DA. Structure and physical properties of BaCuTeF Journal of Solid State Chemistry. 180: 1672-1677. DOI: 10.1016/J.Jssc.2007.03.021 |
0.444 |
|
2007 |
Anderson JT, Munsee CL, Hung CM, Phung TM, Herman GS, Johnson DC, Wager JF, Keszler DA. Solution-processed HafSOx and ZircSOx inorganic thin-film dielectrics and nanolaminates Advanced Functional Materials. 17: 2117-2124. DOI: 10.1002/Adfm.200601135 |
0.435 |
|
2006 |
Yanagi H, Tate J, Park S, Park CH, Keszler DA, Hirano M, Hosono H. Valence band structure of BaCuSF and BaCuSeF Journal of Applied Physics. 100. DOI: 10.1063/1.2358828 |
0.56 |
|
2006 |
Hong D, Chiang HQ, Presley RE, Dehuff NL, Bender JP, Park CH, Wager JF, Keszler DA. Transparent thin-film transistor exploratory development via sequential layer deposition and thermal annealing Thin Solid Films. 515: 2717-2721. DOI: 10.1016/J.Tsf.2006.03.050 |
0.581 |
|
2006 |
Anderson JT, Meyers ST, Chiang HQ, Hong D, Presley RE, Wager JF, Keszler DA. Solution-processed oxide films, devices, and integrated circuits Materials Research Society Symposium Proceedings. 988: 218-225. |
0.769 |
|
2005 |
Newhouse PF, Park CH, Keszler DA, Tate J, Nyholm PS. High electron mobility W-doped In 2O 3 thin films by pulsed laser deposition Applied Physics Letters. 87. DOI: 10.1063/1.2048829 |
0.373 |
|
2005 |
Chiang HQ, Wager JF, Hoffman RL, Jeong J, Keszler DA. High mobility transparent thin-film transistors with amorphous zinc tin oxide channel layer Applied Physics Letters. 86: 013503-1-013503-3. DOI: 10.1063/1.1843286 |
0.365 |
|
2005 |
Ye N, Stone-Sundberg JL, Hruschka MA, Aka G, Kong W, Keszler DA. Nonlinear optical crystal Y xla ySc z(BO 3) 4 (x + y + z = 4) Chemistry of Materials. 17: 2687-2692. DOI: 10.1021/Cm050090C |
0.739 |
|
2005 |
Anderson J, Meyers S, Keszler DA, Munsee C, Olson J, Wager JF, Phung T, Johnson DC, Herman GS. Solution-based, low-temperature deposition of oxide thin films for electronics Digital Fabrication 2005 - Final Program and Proceedings. 179. |
0.791 |
|
2005 |
Newhouse PF, Park CH, Keszler DA, Tate J, Nyholm PS. High electron mobility W-doped in2O3 thin films Materials Research Society Symposium Proceedings. 905: 1-6. |
0.363 |
|
2004 |
Mizoguchi H, Woodward PM, Park CH, Keszler DA. Strong near-infrared luminescence in BaSnO3. Journal of the American Chemical Society. 126: 9796-800. PMID 15291583 DOI: 10.1021/Ja048866I |
0.43 |
|
2004 |
Presley RE, Munsee CL, Park CH, Hong D, Wager JF, Keszler DA. Tin oxide transparent thin-film transistors Journal of Physics D: Applied Physics. 37: 2810-2813. DOI: 10.1088/0022-3727/37/20/006 |
0.306 |
|
2003 |
Yanagi H, Tate J, Park S, Park CH, Keszler DA. p-type conductivity in wide-band-gap BaCuQF (Q = S,Se) Applied Physics Letters. 82: 2814-2816. DOI: 10.1063/1.1571224 |
0.559 |
|
2003 |
Park S, Herman GS, Keszler DA. Oxide films: Low-temperature deposition and crystallization Journal of Solid State Chemistry. 175: 84-87. DOI: 10.1016/S0022-4596(03)00169-5 |
0.6 |
|
2003 |
Park S, Keszler DA. Synthesis of 3R-CuMO2+δ (M=Ga, Sc, In) Journal of Solid State Chemistry. 173: 355-358. DOI: 10.1016/S0022-4596(03)00110-5 |
0.396 |
|
2003 |
Yanagi H, Park S, Draeseke AD, Keszler DA, Tate J. P-type conductivity in transparent oxides and sulfide fluorides Journal of Solid State Chemistry. 175: 34-38. DOI: 10.1016/S0022-4596(03)00095-1 |
0.543 |
|
2003 |
Park CH, Keszler DA, Yanagi H, Tate J. Gap modulation in MCu[Q1-xQ′x]F (M = Ba, Sr; Q, Q′ = S, Se, Te) and related materials Thin Solid Films. 445: 288-293. DOI: 10.1016/J.Tsf.2003.08.034 |
0.487 |
|
2002 |
Park S, Clark BL, Keszler DA, Bender JP, Wager JF, Reynolds TA, Herman GS. Low-temperature thin-film deposition and crystallization. Science (New York, N.Y.). 297: 65. PMID 12098690 DOI: 10.1126/Science.1072009 |
0.599 |
|
2002 |
Park S, Keszler DA, Valencia MM, Hoffman RL, Bender JP, Wager JF. Transparent p-type conducting BaCu2S2 films Applied Physics Letters. 80: 4393-4394. DOI: 10.1063/1.1485133 |
0.583 |
|
2002 |
Park S, Keszler DA. Cation ordering in langasite structure types Solid State Sciences. 4: 799-802. DOI: 10.1016/S1293-2558(02)01328-6 |
0.437 |
|
1999 |
Dimitrova V, Draeseke A, Tate J, Yokoyama T, Clark BL, Keszler DA. Red electroluminescence from ZnGaS:Mn thin films Applied Physics Letters. 75: 2353-2355. |
0.372 |
|
1985 |
Keszler DA, Ibers JA, Mueller MH. Preparation, characterization, and physical properties of the series MPd3S4 (M = rare earth) Journal of the Chemical Society, Dalton Transactions. 2369-2373. DOI: 10.1039/Dt9850002369 |
0.344 |
|
1985 |
Keszler DA, Ibers JA, Maoyu S, Jiaxi L. New ternary and quaternary transition-metal selenides: Syntheses and characterization Journal of Solid State Chemistry. 57: 68-81. DOI: 10.1016/S0022-4596(85)80061-X |
0.305 |
|
1984 |
Keszler DA, Ibers JA. A new structural type in ternary chalcogenide chemistry: Structure and properties of Nb2Pd3Se8 Journal of Solid State Chemistry. 52: 73-79. DOI: 10.1016/0022-4596(84)90200-7 |
0.339 |
|
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