Year |
Citation |
Score |
2017 |
Bell BM, Clark TP, De Vries TS, Lai Y, Laitar DS, Gallagher TJ, Jeon J, Kearns KL, McIntire T, Mukhopadhyay S, Na H, Paine TD, Rachford AA. Boron-based TADF emitters with improved OLED device efficiency roll-off and long lifetime Dyes and Pigments. 141: 83-92. DOI: 10.1016/J.Dyepig.2017.01.055 |
0.38 |
|
2015 |
Stinner FS, Lai Y, Straus DB, Diroll BT, Kim DK, Murray CB, Kagan CR. Flexible, High-Speed CdSe Nanocrystal Integrated Circuits. Nano Letters. PMID 26407206 DOI: 10.1021/Acs.Nanolett.5B03363 |
0.721 |
|
2014 |
Oh SJ, Wang Z, Berry NE, Choi JH, Zhao T, Gaulding EA, Paik T, Lai Y, Murray CB, Kagan CR. Engineering charge injection and charge transport for high performance PbSe nanocrystal thin film devices and circuits. Nano Letters. 14: 6210-6. PMID 25298154 DOI: 10.1021/Nl502491D |
0.704 |
|
2014 |
Lai Y, Li H, Kim DK, Diroll BT, Murray CB, Kagan CR. Low-frequency (1/f) noise in nanocrystal field-effect transistors. Acs Nano. 8: 9664-72. PMID 25195975 DOI: 10.1021/Nn504303B |
0.658 |
|
2013 |
Choi JH, Oh SJ, Lai Y, Kim DK, Zhao T, Fafarman AT, Diroll BT, Murray CB, Kagan CR. In situ repair of high-performance, flexible nanocrystal electronics for large-area fabrication and operation in air. Acs Nano. 7: 8275-83. PMID 23952742 DOI: 10.1021/Nn403752D |
0.74 |
|
2012 |
Kim DK, Lai Y, Diroll BT, Murray CB, Kagan CR. Flexible and low-voltage integrated circuits constructed from high-performance nanocrystal transistors. Nature Communications. 3: 1216. PMID 23169057 DOI: 10.1038/Ncomms2218 |
0.706 |
|
2011 |
Bink H, Lai Y, Saudari SR, Helfer B, Viventi J, Van der Spiegel J, Litt B, Kagan C. Flexible organic electronics for use in neural sensing. Conference Proceedings : ... Annual International Conference of the Ieee Engineering in Medicine and Biology Society. Ieee Engineering in Medicine and Biology Society. Annual Conference. 2011: 5400-3. PMID 22255558 DOI: 10.1109/IEMBS.2011.6091335 |
0.655 |
|
2011 |
Kim DK, Lai Y, Vemulkar TR, Kagan CR. Flexible, low-voltage, and low-hysteresis PbSe nanowire field-effect transistors. Acs Nano. 5: 10074-83. PMID 22084980 DOI: 10.1021/Nn203948X |
0.692 |
|
2010 |
Saudari SR, Lin YJ, Lai Y, Kagan CR. Device configurations for ambipolar transport in flexible, pentacene transistors. Advanced Materials (Deerfield Beach, Fla.). 22: 5063-8. PMID 20941773 DOI: 10.1002/Adma.201001853 |
0.652 |
|
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