| Year |
Citation |
Score |
| 2017 |
Gallet JJ, Silly MG, Kazzi ME, Bournel F, Sirotti F, Rochet F. Chemical and kinetic insights into the Thermal Decomposition of an Oxide Layer on Si(111) from Millisecond Photoelectron Spectroscopy. Scientific Reports. 7: 14257. PMID 29079787 DOI: 10.1038/s41598-017-14532-4 |
0.349 |
|
| 2015 |
Chaudhary S, Head AR, Sánchez-De-Armas R, Tissot H, Olivieri G, Bournel F, Montelius L, Ye L, Rochet F, Gallet JJ, Brena B, Schnadt J. Real-Time Study of CVD Growth of Silicon Oxide on Rutile TiO2(110) Using Tetraethyl Orthosilicate Journal of Physical Chemistry C. 119: 19149-19161. DOI: 10.1021/acs.jpcc.5b04985 |
0.327 |
|
| 1998 |
Gosset LG, Ganem JJ, Trimaille I, Rigo S, Rochet F, Dufour G, Jolly F, Stedile FC, Baumvol IJR. High resolution depth profiling in silicon oxynitride films using narrow nuclear reaction resonances Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 136: 521-527. |
0.582 |
|
| 1996 |
Cantin JL, Schoisswohl M, Von Bardeleben HJ, Rochet F, Dufour G. Pb1 defect study and chemical characterization of the Si(001)-SiO2 interface in oxidized porous silicon Surface Science. 352: 793-796. DOI: 10.1016/0039-6028(95)01230-3 |
0.338 |
|
| 1993 |
Debauche C, Licoppe C, Ossart P, Devine RAB, Rochet F. Influence of pressure on nitrogen incorporation in ultraviolet chemical vapor deposited SiO2 films Journal of Applied Physics. 74: 5672-5678. DOI: 10.1063/1.354182 |
0.352 |
|
| 1992 |
Rochet F, Roulet H, Dufour G, Carniato S, Guillot C, Barrett N, Froment M. Si(001) vicinal surface oxidation in O2: Angle-resolved Si 2p core-level study using synchroton radiation Applied Surface Science. 59: 117-134. DOI: 10.1016/0169-4332(92)90296-A |
0.365 |
|
| 1990 |
Perriere J, Hauchecorne G, Kerherve F, Rochet F, Defourneau RM, Simon C, Rosenman I, Enard JP, Laurent A, Fogarassy E, Fuchs C. Thin films of BiSrCaCu oxide prepared by laser evaporation Journal of Materials Research. 5: 258-264. |
0.367 |
|
| 1989 |
Rochet F, Froment M, D'Anterroches C, Roulet H, Dufour G. Growth of epitaxial silica on vicinal Si(001) surfaces during thermal oxidation in O2 Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties. 59: 339-363. DOI: 10.1080/13642818908220183 |
0.363 |
|
| 1989 |
Mott NF, Rigo S, Rochet F, Stoneham AM. Oxidation of silicon Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties. 60: 189-212. DOI: 10.1080/13642818908211190 |
0.592 |
|
| 1988 |
Rochet F, Rigo S. EFFECT OF PRESSURE ON REACTION BETWEEN DEUTERATED WATER AND THIN AMORPHOUS SILICA FILMS. Philosophical Magazine Letters. 57: 123-128. DOI: 10.1080/09500838808229621 |
0.567 |
|
| 1987 |
Rochet F, Rigo S, Froment M, D’Anterroches C, Maillot C, Roulet H, Dufour G. The thermal oxidation of silicon the special case of the growth of very thin films Philosophical Magazine B: Physics of Condensed Matter; Statistical Mechanics, Electronic, Optical and Magnetic Properties. 55: 309. DOI: 10.1080/13642818708211211 |
0.674 |
|
| 1986 |
Rochet F, Rigo S. EFFECT OF PRESSURE ON THERMALLY INDUCED DIFFUSIVITY AND REACTIVITY OF WATER IN THIN AMORPHOUS SILICA FILMS. Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties. 55: 747-755. DOI: 10.1080/13642818708218378 |
0.599 |
|
| 1986 |
Rochet F, Rigo S, Froment M, d'Anterroches C, Maillot C, Roulet H, Dufour G. THERMAL OXIDATION OF SILICON: THE SPECIAL CASE OF THE GROWTH OF VERY THIN FILMS. Advances in Physics. 35: 237-274. DOI: 10.1080/00018738600101891 |
0.674 |
|
| 1986 |
Maillot C, Roulet H, Dufour G, Rochet F, Rigo S. Study of atomic transport mechanisms during thermal nitridation of silicon in ammonia using 15N and D labelled gas Applied Surface Science. 26: 326-334. DOI: 10.1016/0169-4332(86)90073-5 |
0.501 |
|
| 1986 |
Rochet F, Rigo S, Froment M, D'Anterroches C, Maillot C, Roulet H, Dufour G. THERMAL OXIDATION OF SILICON - THE SPECIAL CASE OF THE GROWTH OF VERY THIN FILMS. Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties. 55: 309. |
0.674 |
|
| 1985 |
Collot P, Gautherin G, Agius B, Rigo S, Rochet F. LOW-PRESSURE OXIDATION OF SILICON STIMULATED BY LOW-ENERGY ELECTRON BOMBARDMENT. Philosophical Magazine B: Physics of Condensed Matter; Electronic, Optical and Magnetic Properties. 52: 1051-1069. DOI: 10.1080/13642818508238950 |
0.538 |
|
| 1984 |
Agius B, Ecole Normale Superieure GdPdS, Rigo S, Rochet F, Froment M, Maillot C, Roulet H, Dufour G. STRUCTURAL EVOLUTION OF VERY THIN SILICON OXIDE FILMS DURING THERMAL GROWTH IN DRY OXYGEN. Applied Physics Letters. 44: 48-50. DOI: 10.1063/1.94547 |
0.671 |
|
| 1984 |
Rochet F, Agius B, Rigo S. **1**8O STUDY OF THE OXIDATION MECHANISM OF SILICON IN DRY OXYGEN. Journal of the Electrochemical Society. 131: 914-923. |
0.57 |
|
| 1983 |
Agius B, Froment M, Rigo S, Rochet F. OXYGEN TRANSPORT STUDIED BY **1**8O LABELLING IN THIN THERMAL SILICON OXIDE FILMS IN CONNECTION WITH THEIR STRUCTURAL CHARACTERISTICS. Thin Films Science and Technology. 463-471. |
0.646 |
|
| 1982 |
Rigo S, Rochet F, Agius B, Straboni A. **1**8O STUDY OF COOPERATIVE DIFFUSION AND CHEMICAL REACTION DURING THERMAL TREATMENTS OF SILICA FILMS IN WATER VAPOR. Journal of the Electrochemical Society. 129: 867-876. |
0.587 |
|
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