Oussama Moutanabbir - Publications

2007-2009 Engineering Physics Ecole Polytechnique de Montréal 

91 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 von den Driesch N, Wirths S, Troitsch R, Mussler G, Breuer U, Moutanabbir O, Grützmacher D, Buca D. Thermally activated diffusion and lattice relaxation in (Si)GeSn materials Physical Review Materials. 4. DOI: 10.1103/Physrevmaterials.4.033604  0.337
2020 Grange T, Mukherjee S, Capellini G, Montanari M, Persichetti L, Gaspare LD, Birner S, Attiaoui A, Moutanabbir O, Virgilio M, Seta MD. Atomic-Scale Insights into Semiconductor Heterostructures: From Experimental Three-Dimensional Analysis of the Interface to a Generalized Theory of Interfacial Roughness Scattering Physical Review Applied. 13: 44062. DOI: 10.1103/Physrevapplied.13.044062  0.346
2020 Bouthillier É, Assali S, Nicolas J, Moutanabbir O. Decoupling the effects of composition and strain on the vibrational modes of GeSn semiconductors Semiconductor Science and Technology. 35: 95006. DOI: 10.1088/1361-6641/Ab9846  0.362
2020 An Q, Fortin-Deschênes M, Yu G, Moutanabbir O, Guo H. Effects of short-range order and interfacial interactions on the electronic structure of two-dimensional antimony-arsenic alloys Journal of Applied Physics. 127: 25305. DOI: 10.1063/1.5131262  0.347
2020 Nicolas J, Assali S, Mukherjee S, Lotnyk A, Moutanabbir O. Dislocation pipe diffusion and solute segregation during the growth of metastable GeSn Crystal Growth & Design. 20: 3493-3498. DOI: 10.1021/Acs.Cgd.0C00270  0.393
2019 Fortin-Deschênes M, Waller O, An Q, Lagos MJ, Botton GA, Guo H, Moutanabbir O. 2D Antimony-Arsenic Alloys. Small (Weinheim An Der Bergstrasse, Germany). e1906540. PMID 31880095 DOI: 10.1002/Smll.201906540  0.313
2019 Mukherjee S, Attiaoui A, Bauer M, Moutanabbir O. 3-D Atomic Mapping of Interfacial Roughness and its Spatial Correlation Length in sub-10 nm Superlattices. Acs Applied Materials & Interfaces. PMID 31808669 DOI: 10.1021/Acsami.9B13802  0.392
2019 Fortin-Deschênes M, Jacobberger RM, Deslauriers CA, Waller O, Bouthillier É, Arnold MS, Moutanabbir O. Dynamics of Antimonene-Graphene Van Der Waals Growth. Advanced Materials (Deerfield Beach, Fla.). e1900569. PMID 30968486 DOI: 10.1002/Adma.201900569  0.338
2019 Jacobberger RM, Murray EA, Fortin-Deschênes M, Göltl F, Behn WA, Krebs ZJ, Levesque PL, Savage DE, Smoot C, Lagally MG, Desjardins P, Martel R, Brar V, Moutanabbir O, Mavrikakis M, et al. Alignment of semiconducting graphene nanoribbons on vicinal Ge(001). Nanoscale. PMID 30821309 DOI: 10.1039/C9Nr00713J  0.313
2019 Assali S, Elsayed M, Nicolas J, Liedke MO, Wagner A, Butterling M, Krause-Rehberg R, Moutanabbir O. Vacancy complexes in nonequilibrium germanium-tin semiconductors Applied Physics Letters. 114: 251907. DOI: 10.1063/1.5108878  0.384
2019 Assali S, Nicolas J, Moutanabbir O. Enhanced Sn incorporation in GeSn epitaxial semiconductors via strain relaxation Journal of Applied Physics. 125: 025304. DOI: 10.1063/1.5050273  0.475
2018 Mukherjee S, Givan U, Senz S, de la Mata M, Arbiol J, Moutanabbir O. Reduction of Thermal Conductivity in Nanowires by Combined Engineering of Crystal Phase and Isotope Disorder. Nano Letters. PMID 29694788 DOI: 10.1021/Acs.Nanolett.8B00612  0.33
2018 Mamun MA, Tapily K, Moutanabbir O, Baumgart H, Elmustafa AA. Effect of Hydrogen Implantation on the Mechanical Properties of AlN throughout Ion-Induced Splitting Ecs Journal of Solid State Science and Technology. 7. DOI: 10.1149/2.0131804Jss  0.325
2018 Assali S, Attiaoui A, Mukherjee S, Nicolas J, Moutanabbir O. TEOS layers for low temperature processing of group IV optoelectronic devices Journal of Vacuum Science & Technology B. 36: 061204. DOI: 10.1116/1.5047909  0.4
2018 Assali S, Nicolas J, Mukherjee S, Dijkstra A, Moutanabbir O. Atomically uniform Sn-rich GeSn semiconductors with 3.0–3.5 μm room-temperature optical emission Applied Physics Letters. 112: 251903. DOI: 10.1063/1.5038644  0.472
2018 Attiaoui A, Wirth S, Blanchard-Dionne A, Meunier M, Hartmann JM, Buca D, Moutanabbir O. Extreme IR absorption in group IV-SiGeSn core-shell nanowires Journal of Applied Physics. 123: 223102. DOI: 10.1063/1.5021393  0.428
2018 Fortin-Deschênes M, Moutanabbir O. Recovering the Semiconductor Properties of the Epitaxial Group V 2D Materials Antimonene and Arsenene Journal of Physical Chemistry C. 122: 9162-9168. DOI: 10.1021/Acs.Jpcc.8B00044  0.319
2017 Fortin-Deschênes M, Waller O, Mentes TO, Locatelli A, Mukherjee S, Genuzio F, Levesque PL, Hebert A, Martel R, Moutanabbir O. Synthesis of Antimonene on Germanium. Nano Letters. PMID 28678509 DOI: 10.1021/Acs.Nanolett.7B02111  0.354
2017 Jung D, Faucher J, Mukherjee S, Akey A, Ironside DJ, Cabral M, Sang X, Lebeau J, Bank SR, Buonassisi T, Moutanabbir O, Lee ML. Highly tensile-strained Ge/InAlAs nanocomposites. Nature Communications. 8: 14204. PMID 28128282 DOI: 10.1038/Ncomms14204  0.401
2017 Mukherjee S, Kodali N, Isheim D, Wirths S, Hartmann JM, Buca D, Seidman DN, Moutanabbir O. Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors Physical Review B. 95. DOI: 10.1103/Physrevb.95.161402  0.386
2017 Abboud Z, Moutanabbir O. Temperature-Dependent in Situ Studies of Volatile Molecule Trapping in Low-Temperature-Activated Zr Alloy-Based Getters Journal of Physical Chemistry C. 121: 3396. DOI: 10.1021/Acs.Jpcc.6B11426  0.315
2016 Fortin-Deschênes M, Levesque PL, Martel R, Moutanabbir O. Dynamics and Mechanisms of Exfoliated Black Phosphorus Sublimation. The Journal of Physical Chemistry Letters. 7: 1667-74. PMID 27097073 DOI: 10.1021/Acs.Jpclett.6B00584  0.379
2016 Moutanabbir O, Isheim D, Mao Z, Seidman DN. Evidence of sub-10 nm aluminum-oxygen precipitates in silicon. Nanotechnology. 27: 205706. PMID 27071742 DOI: 10.1088/0957-4484/27/20/205706  0.357
2016 Mukherjee S, Watanabe H, Isheim D, Seidman DN, Moutanabbir O. Laser-assisted field evaporation and three-dimensional atom-by-atom mapping of diamond isotopic homojunctions. Nano Letters. PMID 26741402 DOI: 10.1021/Acs.Nanolett.5B04728  0.312
2016 Chagnon D, Pippel E, Senz S, Moutanabbir O. Metal Seed Loss Throughout the Nanowire Growth: Bulk Trapping and Surface Mass Transport The Journal of Physical Chemistry C. 120: 2932-2940. DOI: 10.1021/Acs.Jpcc.5B07361  0.335
2016 Baribeau JM, Bauer M, Desjardins P, Lee ML, Loo R, Moutanabbir O, Rastelli A, Reznicek A, Quitoriano N. ICSI-9, Montréal 2015: Silicon for now and beyond Thin Solid Films. 602: 1-2. DOI: 10.1016/J.Tsf.2016.01.041  0.357
2015 Mukherjee S, Givan U, Senz S, Bergeron A, Francoeur S, de la Mata M, Arbiol J, Sekiguchi T, Itoh KM, Isheim D, Seidman DN, Moutanabbir O. Phonon Engineering in Isotopically Disordered Silicon Nanowires. Nano Letters. 15: 3885-93. PMID 25993500 DOI: 10.1021/Acs.Nanolett.5B00708  0.38
2015 Scheerschmidt K, Moutanabbir O. Tracking atomic processes throughout the formation of heteroepitaxial interfaces Crystal Research and Technology. 50: 490-498. DOI: 10.1002/Crat.201500061  0.418
2014 Blumtritt H, Isheim D, Senz S, Seidman DN, Moutanabbir O. Preparation of nanowire specimens for laser-assisted atom probe tomography. Nanotechnology. 25: 435704. PMID 25299058 DOI: 10.1088/0957-4484/25/43/435704  0.401
2014 Lee SM, Pippel E, Moutanabbir O, Kim JH, Lee HJ, Knez M. In situ Raman spectroscopic study of Al-infiltrated spider dragline silk under tensile deformation. Acs Applied Materials & Interfaces. 6: 16827-34. PMID 25203848 DOI: 10.1021/Am5041797  0.326
2014 Xiong G, Moutanabbir O, Reiche M, Harder R, Robinson I. Coherent X-ray diffraction imaging and characterization of strain in silicon-on-insulator nanostructures. Advanced Materials (Deerfield Beach, Fla.). 26: 7747-63. PMID 24955950 DOI: 10.1002/Adma.201304511  0.368
2014 Balois MV, Hayazawa N, Tarun A, Kawata S, Reiche M, Moutanabbir O. Direct optical mapping of anisotropic stresses in nanowires using transverse optical phonon splitting. Nano Letters. 14: 3793-8. PMID 24867226 DOI: 10.1021/Nl500891F  0.38
2014 Attiaoui A, Moutanabbir O. Indirect-to-direct band gap transition in relaxed and strained Ge1−x−ySixSnyternary alloys Journal of Applied Physics. 116: 063712. DOI: 10.1063/1.4889926  0.37
2014 Chen P, Zhang JJ, Feser JP, Pezzoli F, Moutanabbir O, Cecchi S, Isella G, Gemming T, Baunack S, Chen G, Schmidt OG, Rastelli A. Thermal transport through short-period SiGe nanodot superlattices Journal of Applied Physics. 115. DOI: 10.1063/1.4863115  0.377
2014 Dadwal U, Kumar P, Moutanabbir O, Reiche M, Singh R. Effect of implantation temperature on the H-induced microstructural damage in AlN Journal of Alloys and Compounds. 588: 300-304. DOI: 10.1016/J.Jallcom.2013.10.227  0.351
2013 Moutanabbir O, Isheim D, Blumtritt H, Senz S, Pippel E, Seidman DN. Colossal injection of catalyst atoms into silicon nanowires. Nature. 496: 78-82. PMID 23552946 DOI: 10.1038/Nature11999  0.399
2013 Balois MV, Hayazawa N, Tarun A, Moutanabbir O, Kawata S. Precise and stable polarization control in a tightly focusing system for accurate characterization of strained Silicon nanostructures The Japan Society of Applied Physics. DOI: 10.1364/Jsap.2013.19A_D5_9  0.416
2013 Tarun A, Hayazawa N, Balois MV, Kawata S, Reiche M, Moutanabbir O. Stress redistribution in individual ultrathin strained silicon nanowires: a high-resolution polarized Raman study New Journal of Physics. 15: 53042. DOI: 10.1088/1367-2630/15/5/053042  0.42
2013 Fournier-Lupien JH, Mukherjee S, Wirths S, Pippel E, Hayazawa N, Mussler G, Hartmann JM, Desjardins P, Buca D, Moutanabbir O. Strain and composition effects on Raman vibrational modes of silicon-germanium-tin ternary alloys Applied Physics Letters. 103. DOI: 10.1063/1.4855436  0.409
2013 Essig S, Moutanabbir O, Wekkeli A, Nahme H, Oliva E, Bett AW, Dimroth F. Fast atom beam-activated n-Si/n-GaAs wafer bonding with high interfacial transparency and electrical conductivity Journal of Applied Physics. 113: 203512. DOI: 10.1063/1.4807905  0.376
2012 Hähnel A, Reiche M, Moutanabbir O, Blumtritt H, Geisler H, Höntschel J, Engelmann HJ. Improving accuracy and precision of strain analysis by energy-filtered nanobeam electron diffraction. Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada. 18: 229-40. PMID 22258726 DOI: 10.1017/S1431927611012657  0.392
2012 Qin Y, Vogelgesang R, Eßlinger M, Sigle W, Van Aken P, Moutanabbir O, Knez M. Bottom-up tailoring of plasmonic nanopeapods making use of the periodical topography of carbon nanocoil templates Advanced Functional Materials. 22: 5157-5165. DOI: 10.1002/Adfm.201201791  0.302
2011 Tarun A, Hayazawa N, Ishitobi H, Kawata S, Reiche M, Moutanabbir O. Mapping the "forbidden" transverse-optical phonon in single strained silicon (100) nanowire. Nano Letters. 11: 4780-8. PMID 21967475 DOI: 10.1021/Nl202599Q  0.433
2011 Qin Y, Pan A, Liu L, Moutanabbir O, Yang RB, Knez M. Atomic layer deposition assisted template approach for electrochemical synthesis of Au crescent-shaped half-nanotubes. Acs Nano. 5: 788-94. PMID 21210698 DOI: 10.1021/Nn102879S  0.391
2011 Moutanabbir O, Senz S, Scholz R, Alexe M, Kim Y, Pippel E, Wang Y, Wiethoff C, Nabbefeld T, Meyer zu Heringdorf F, Horn-von Hoegen M. Atomically smooth p-doped silicon nanowires catalyzed by aluminum at low temperature. Acs Nano. 5: 1313-20. PMID 21210666 DOI: 10.1021/Nn1030274  0.369
2011 Moutanabbir O, Reiche M, Zakharov N, Naumann F, Petzold M. Observation of free surface-induced bending upon nanopatterning of ultrathin strained silicon layer. Nanotechnology. 22: 045701. PMID 21157010 DOI: 10.1088/0957-4484/22/4/045701  0.523
2011 Tarun A, Hayazawa N, Moutanabbir O, Kawata S. Probing Transverse-Optical Phonons in Strained Si Nanowire: Strain Profiles and Nanomechanical properties The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2011.M-9-1  0.409
2011 Elsayed M, Krause-Rehberg R, Moutanabbir O, Anwand W, Richter S, Hagendorf C. Cu diffusion-induced vacancy-like defects in freestanding GaN New Journal of Physics. 13: 013029. DOI: 10.1088/1367-2630/13/1/013029  0.327
2011 Xiong G, Moutanabbir O, Huang X, Paknejad SA, Shi X, Harder R, Reiche M, Robinson IK. Elastic relaxation in an ultrathin strained silicon-on-insulator structure Applied Physics Letters. 99: 114103. DOI: 10.1063/1.3637634  0.425
2011 Moutanabbir O, Isheim D, Seidman DN, Kawamura Y, Itoh KM. Ultraviolet-laser atom-probe tomographic three-dimensional atom-by-atom mapping of isotopically modulated Si nanoscopic layers Applied Physics Letters. 98: 013111. DOI: 10.1063/1.3531816  0.404
2011 Hähnel A, Reiche M, Moutanabbir O, Blumtritt H, Geisler H, Hoentschel J, Engelmann H. Nano-beam electron diffraction evaluation of strain behaviour in nano-scale patterned strained silicon-on-insulator Physica Status Solidi (C). 8: 1319-1324. DOI: 10.1002/Pssc.201084007  0.401
2011 Reiche M, Moutanabbir O, Hoentschel J, Hähnel A, Flachowsky S, Gösele U, Horstmann M. Strained Silicon Nanodevices Mechanical Stress On the Nanoscale: Simulation, Material Systems and Characterization Techniques. 131-150. DOI: 10.1002/9783527639540.ch6  0.55
2010 Moutanabbir O, Miyamoto S, Haller EE, Itoh KM. Transport of deposited atoms throughout strain-mediated self-assembly. Physical Review Letters. 105: 026101. PMID 20867717 DOI: 10.1103/Physrevlett.105.026101  0.419
2010 Yang RB, Zakharov N, Moutanabbir O, Scheerschmidt K, Wu LM, Gösele U, Bachmann J, Nielsch K. The transition between conformal atomic layer epitaxy and nanowire growth. Journal of the American Chemical Society. 132: 7592-4. PMID 20469861 DOI: 10.1021/Ja102590V  0.699
2010 Moutanabbir O, Reiche M, Hähnel A, Erfurth W, Gösele U, Motohashi M, Tarun A, Hayazawa N, Kawata S. Nanoscale patterning induced strain redistribution in ultrathin strained Si layers on oxide. Nanotechnology. 21: 134013. PMID 20208119 DOI: 10.1088/0957-4484/21/13/134013  0.641
2010 Moutanabbir O, Senz S, Alexe M, Kim Y, Scholz R, Blumtritt H, Wiethoff C, Nabbefeld T, Heringdorf FJMz, Hoegen MH, Isheim D, Seidman DN. The Role of Aluminum Catalyst Atoms in Shaping the Structural and Electrical Properties of Epitaxial Silicon Nanowires The Japan Society of Applied Physics. DOI: 10.7567/Ssdm.2010.H-3-4  0.302
2010 Moutanabbir O, Gösele U. Heterogeneous integration of compound semiconductors Annual Review of Materials Research. 40: 469-500. DOI: 10.1146/Annurev-Matsci-070909-104448  0.589
2010 Moutanabbir O, Scholz R, Gösele U, Guittoum A, Jungmann M, Butterling M, Krause-Rehberg R, Anwand W, Egger W, Sperr P. Experimental elucidation of vacancy complexes associated with hydrogen ion-induced splitting of bulk GaN Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.115205  0.562
2010 Moutanabbir O, Reiche M, Hähnel A, Erfurth W, Gösele U, Motohashi M, Tarun A, Hayazawa N, Kawata S. Nanoscale patterning induced strain redistribution in ultrathin strained Si layers on oxide Nanotechnology. 21. DOI: 10.1088/0957-4484/21/13/134013  0.576
2010 Moutanabbir O, Reiche M, Hähnel A, Oehme M, Kasper E. Multiwavelength micro-Raman analysis of strain in nanopatterned ultrathin strained silicon-on-insulator Applied Physics Letters. 97: 053105. DOI: 10.1063/1.3475399  0.444
2010 Moutanabbir O, Reiche M, Hähnel A, Erfurth W, Motohashi M, Tarun A, Hayazawa N, Kawata S. UV-Raman imaging of the in-plane strain in single ultrathin strained silicon-on-insulator patterned structure Applied Physics Letters. 96. DOI: 10.1063/1.3449135  0.418
2010 Yang RB, Zakharov N, Moutanabbir O, Scheerschmidt K, Wu LM, Gösele U, Bachmann J, Nielsch K. The transition between conformal atomic layer epitaxy and nanowire growth Journal of the American Chemical Society. 132: 7592-7594. DOI: 10.1021/ja102590v  0.684
2010 Singh R, Christiansen SH, Moutanabbir O, Gösele U. The phenomenology of ion implantation-induced blistering and thin-layer splitting in compound semiconductors Journal of Electronic Materials. 39: 2177-2189. DOI: 10.1007/S11664-010-1334-X  0.601
2010 Moutanabbir O, Gösele U. Bulk GaN ion cleaving Journal of Electronic Materials. 39: 482-488. DOI: 10.1007/S11664-010-1100-0  0.592
2010 Singh R, Dadwal U, Scholz R, Moutanabbir O, Christiansen S, Gösele U. Study of implantation-induced blistering/exfoliation in wide bandgap semiconductors for layer transfer applications Physica Status Solidi (C) Current Topics in Solid State Physics. 7: 44-47. DOI: 10.1002/Pssc.200982630  0.583
2009 Reiche M, Moutanabbir O, Hoentschel J, Gösele U, Flachowsky S, Horstmann M. Strained silicon devices Solid State Phenomena. 156: 61-68. DOI: 10.4028/Www.Scientific.Net/Ssp.156-158.61  0.586
2009 Moutanabbir O, Reiche M, Hähnel A, Erfurth W, Naumann F, Petzold M, Gösele U. Probing the strain states in nanopatterned strained SOI Ecs Transactions. 25: 187-194. DOI: 10.1149/1.3204406  0.499
2009 Moutanabbir O, Senz S, Scholz R, Christiansen S, Reiche M, Avramescu A, Strauss U, Gösele U. Stress adjustment and bonding of H-implanted 2 in. Freestanding GaN wafer: The concept of double-sided splitting Electrochemical and Solid-State Letters. 12: H105-H108. DOI: 10.1149/1.3066081  0.573
2009 Moutanabbir O, Scholz R, Gösele U, Terreault B. Facile synthesis of highly stable a-Si by ion implantation of low-keV H isotopes Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.233202  0.611
2009 Miyamoto S, Moutanabbir O, Haller EE, Itoh KM. Spatial correlation of self-assembled isotopically pure Ge/Si(001) nanoislands Physical Review B - Condensed Matter and Materials Physics. 79. DOI: 10.1103/Physrevb.79.165415  0.442
2009 Moutanabbir O, Reiche M, Erfurth W, Naumann F, Petzold M, Gösele U. The complex evolution of strain during nanoscale patterning of 60 nm thick strained silicon layer directly on insulator Applied Physics Letters. 94. DOI: 10.1063/1.3157134  0.614
2009 Moutanabbir O, Chabal YJ, Chicoine M, Christiansen S, Krause-Rehberg R, Schiettekatte F, Scholz R, Seitz O, Senz S, Süßkraut F, Gösele U. Mechanisms of ion-induced GaN thin layer splitting Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 267: 1264-1268. DOI: 10.1016/J.Nimb.2009.01.028  0.585
2009 Moutanabbir O, Senz S, Zhang Z, Gösele U. Synthesis of isotopically controlled metal-catalyzed silicon nanowires Nano Today. 4: 393-398. DOI: 10.1016/J.Nantod.2009.08.009  0.588
2009 Moutanabbir O, Terreault B, Giguère A. Amorphisation and sub-100-nm exfoliation of hydrogen-ion-implanted silicon Physica Status Solidi (C). 6: 1958-1963. DOI: 10.1002/Pssc.200881453  0.454
2008 Reiche M, Moutanabbir O, Himcinschi C, Christiansen S, Erfurth W, Gösele U, Mantl S, Buca D, Zhao QT, Loo R, Nguyen D, Muster F, Petzold M. Strained silicon on wafer level by wafer bonding: Materials processing, strain measurements and strain relaxation Ecs Transactions. 16: 311-320. DOI: 10.1149/1.2982883  0.545
2008 Moutanabbir O, Reiche M, Erfurth W, Scholz R, Gösele U. Strain relaxation in nanostructured ultra thin SSOI Proceedings - Ieee International Soi Conference. 71-72. DOI: 10.1109/SOI.2008.4656299  0.514
2008 Moutanabbir O, Scholz R, Senz S, Gösele U, Chicoine M, Schiettekatte F, Süßkraut F, Krause-Rehberg R. Microstructural evolution in H ion induced splitting of freestanding GaN Applied Physics Letters. 93. DOI: 10.1063/1.2955832  0.631
2008 Moutanabbir O, Miyamoto S, Sagara A, Oshikawa H, Itoh K. Tuning the luminescence emission of {105}-faceted Ge QDs superlattice using proton implantation and thermal annealing Thin Solid Films. 517: 391-394. DOI: 10.1016/J.Tsf.2008.08.105  0.411
2008 Simpson PJ, Knights AP, Chicoine M, Dudeck K, Moutanabbir O, Ruffell S, Schiettekatte F, Terreault B. Thermal evolution of defects produced by implantation of H, D and He in Silicon Applied Surface Science. 255: 63-67. DOI: 10.1016/J.Apsusc.2008.05.171  0.382
2008 Himcinschi C, Singh R, Moutanabbir O, Scholz R, Reiche M, Christiansen SH, Gösele U, Zahn DRT. Etching-back of uniaxially strained silicon on insulator investigated by spectroscopic ellipsometry Physica Status Solidi (a) Applications and Materials Science. 205: 841-844. DOI: 10.1002/Pssa.200777753  0.641
2007 Robinson JT, Ratto F, Moutanabbir O, Heun S, Locatelli A, Mentes TO, Aballe L, Dubon OD. Gold-catalyzed oxide nanopatterns for the directed assembly of Ge island arrays on Si. Nano Letters. 7: 2655-9. PMID 17672506 DOI: 10.1021/Nl071051Y  0.369
2007 Moutanabbir O, Terreault B, Chicoine M, Schiettekatte F, Simpson PJ. Influence of isotopic substitution and He coimplantation on defect complexes and voids induced by H ions in silicon Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.075201  0.363
2007 Moutanabbir O, Miyamoto S, Fujimoto A, Itoh KM. Isotopically controlled self-assembled Ge/Si nanostructures Journal of Crystal Growth. 324-329. DOI: 10.1016/J.Jcrysgro.2006.11.178  0.406
2006 Moutanabbir O, Terreault B, Chicoine M, Simpson PJ, Zahel T, Hobler G. Hydrogen/Deuterium-defect complexes involved in the ion cutting of Si (0 0 1) at the sub-100 nm scale Physica B: Condensed Matter. 376: 36-40. DOI: 10.1016/J.Physb.2005.12.011  0.384
2005 Desrosiers N, Giguère A, Moutanabbir O, Terreault B. Ion blistering of boron-doped silicon: The critical role of defect passivation Applied Physics Letters. 87: 231908. DOI: 10.1063/1.2139845  0.376
2005 Moutanabbir O, Terreault B. Effects in synergistic blistering of silicon by coimplantation of H, D, and He ions Applied Physics Letters. 86: 051906. DOI: 10.1063/1.1861502  0.356
2005 Moutanabbir O, Terreault B, Chicoine M, Schiettekatte F. The fluence effect in hydrogen-ion cleaving of silicon at the sub-100-nm scale Applied Physics A. 80: 1455-1462. DOI: 10.1007/S00339-004-3094-Z  0.398
2004 Moutanabbir O, Terreault B. Raman-scattering elucidation of the giant isotope effect in hydrogen-ion blistering of silicon Journal of Chemical Physics. 121: 7973-7986. PMID 15485260 DOI: 10.1063/1.1794571  0.401
2004 Moutanabbir O, Giguère A, Terreault B. Narrow fluence window and giant isotope effect in low-energy hydrogen ion blistering of silicon Applied Physics Letters. 84: 3286-3288. DOI: 10.1063/1.1723699  0.376
2003 Moutanabbir O, Terreault B, Shaffer E, Ross GG. Isotope and Dose Effects in Low-Energy H/D Blistering of Silicon: Narrow Operational Window for Ion-Cutting at < 100 nm Mrs Proceedings. 792. DOI: 10.1557/Proc-792-R9.12  0.386
2003 Moutanabbir O, Terreault B, Ross GG. Isotope and crystal orientation effects in low-energy H/D blistering of Si Applied Physics Letters. 82: 4675-4677. DOI: 10.1063/1.1580637  0.362
Show low-probability matches.