| Year |
Citation |
Score |
| 2019 |
Wang J, Leburton JP, Herzinger CM, DeTemple TA, Coleman JJ. Quantum unconfined Stark effect in a GaAs single quantum well: An optical-constant model. Physical Review. B, Condensed Matter. 47: 4783-4785. PMID 10006630 DOI: 10.1103/Physrevb.47.4783 |
0.393 |
|
| 2016 |
Zhou W, Coleman JJ. Semiconductor quantum dots Current Opinion in Solid State and Materials Science. 20: 352-360. DOI: 10.1016/J.Cossms.2016.06.006 |
0.305 |
|
| 2014 |
Coleman JJ. Patterned nanostructure lasers by MOCVD International Conference On Optical Mems and Nanophotonics. 81-82. DOI: 10.1109/OMN.2014.6924603 |
0.319 |
|
| 2014 |
Silverman KL, Miaja-Avila L, Verma VB, Coleman JJ, Mirin RP. Gain and loss in active waveguides based on lithographically defined quantum dots Ieee Photonics Technology Letters. 26: 1283-1286. DOI: 10.1109/Lpt.2014.2321140 |
0.681 |
|
| 2014 |
Miaja-Avila L, Verma VB, Coleman JJ, Mirin RP, Silverman KL. Ultrafast optical properties of lithographically defined quantum dot amplifiers Applied Physics Letters. 104. DOI: 10.1063/1.4865238 |
0.658 |
|
| 2013 |
Dowdy RS, Zhang C, Mohseni PK, Fortuna SA, Wen JG, Coleman JJ, Li X. Perturbation of au-assisted planar GaAs nanowire growth by p-type dopant impurities Optical Materials Express. 3: 1687-1697. DOI: 10.1364/Ome.3.001687 |
0.388 |
|
| 2013 |
Coleman JJ, Kim JD. Semiconductor quantum well lasers with nanoscale resonant periodic active layers 2013 Ieee Photonics Society Summer Topical Meeting Series, Psstms 2013. 17-18. DOI: 10.1109/PHOSST.2013.6614445 |
0.389 |
|
| 2013 |
Zimmerman JW, Price RK, Reddy U, Dias NL, Coleman JJ. Narrow linewidth surface-etched DBR lasers: Fundamental design aspects and applications Ieee Journal On Selected Topics in Quantum Electronics. 19. DOI: 10.1109/Jstqe.2013.2260731 |
0.811 |
|
| 2013 |
Mohseni PK, Hyun Kim S, Zhao X, Balasundaram K, Dong Kim J, Pan L, Rogers JA, Coleman JJ, Li X. GaAs pillar array-based light emitting diodes fabricated by metal-assisted chemical etching Journal of Applied Physics. 114. DOI: 10.1063/1.4817424 |
0.377 |
|
| 2012 |
Coleman JJ, Dias NL, Reddy U. Narrow spectral linewidth surface grating DBR diode lasers Conference Digest - Ieee International Semiconductor Laser Conference. 173-174. DOI: 10.1109/ISLC.2012.6348390 |
0.789 |
|
| 2012 |
Coleman JJ. Nanopores and quantum dots by selective area metalorganic chemical vapor deposition 2012 Ieee Photonics Conference, Ipc 2012. 776-777. DOI: 10.1109/IPCon.2012.6358853 |
0.365 |
|
| 2012 |
Coleman JJ. The development of the semiconductor laser diode after the first demonstration in 1962 Semiconductor Science and Technology. 27. DOI: 10.1088/0268-1242/27/9/090207 |
0.435 |
|
| 2012 |
Dias NL, Garg A, Reddy U, Choi U, Coleman JJ. Highly uniform periodic inverse quantum dots arrays Applied Physics Letters. 100: 121115. DOI: 10.1063/1.3694015 |
0.797 |
|
| 2011 |
Nelson EC, Dias NL, Bassett KP, Dunham SN, Verma V, Miyake M, Wiltzius P, Rogers JA, Coleman JJ, Li X, Braun PV. Epitaxial growth of three-dimensionally architectured optoelectronic devices. Nature Materials. 10: 676-81. PMID 21785415 DOI: 10.1038/Nmat3071 |
0.794 |
|
| 2011 |
Verma VB, Stevens MJ, Silverman KL, Dias NL, Garg A, Coleman JJ, Mirin RP. Photon antibunching from a single lithographically defined InGaAs/GaAs quantum dot. Optics Express. 19: 4182-7. PMID 21369247 DOI: 10.1364/Oe.19.004182 |
0.82 |
|
| 2011 |
Dias NL, Garg A, Reddy U, Choi U, Coleman JJ. Highly uniform periodic inverse quantum dots arrays Photomedicine and Laser Surgery. 707-708. DOI: 10.1109/Pho.2011.6110746 |
0.787 |
|
| 2011 |
Reddy U, Garg A, Dias NL, Choi U, Coleman JJ. Narrow linewidth operation in broad area laser diodes Photomedicine and Laser Surgery. 583-584. DOI: 10.1109/Pho.2011.6110682 |
0.794 |
|
| 2011 |
Giannopoulos AV, Sulkin JD, Long CM, Coleman JJ, Choquette KD. Decimated photonic crystal defect cavity lasers Ieee Journal On Selected Topics in Quantum Electronics. 17: 1693-1697. DOI: 10.1109/Jstqe.2011.2141975 |
0.39 |
|
| 2011 |
Verma VB, Dias NL, Reddy U, Bassett KP, Li X, Coleman JJ. Bandstructure Engineering With a 2-D Patterned Quantum Well Superlattice Ieee Journal of Quantum Electronics. 47: 417-423. DOI: 10.1109/Jqe.2010.2090134 |
0.82 |
|
| 2011 |
Dias NL, Reddy U, Garg A, Young JD, Verma VB, Coleman JJ. Wide-Stripe Distributed Bragg Grating Lasers With Very Narrow Spectral Linewidth Ieee Journal of Quantum Electronics. 47: 293-299. DOI: 10.1109/Jqe.2010.2081970 |
0.824 |
|
| 2011 |
Coleman JJ, Young JD, Garg A. Semiconductor quantum dot lasers: A tutorial Journal of Lightwave Technology. 29: 499-510. DOI: 10.1109/Jlt.2010.2098849 |
0.498 |
|
| 2011 |
Reddy U, Dias NL, Garg A, Coleman JJ. A single spectral mode wide stripe laser with very narrow linewidth Applied Physics Letters. 99: 171109. DOI: 10.1063/1.3656024 |
0.81 |
|
| 2011 |
Verma VB, Stevens MJ, Silverman KL, Dias NL, Garg A, Coleman JJ, Mirin RP. Time-resolved photoluminescence of lithographically defined quantum dots fabricated by electron beam lithography and wet chemical etching Journal of Applied Physics. 109: 123112. DOI: 10.1063/1.3599889 |
0.819 |
|
| 2011 |
Dias NL, Garg A, Reddy U, Young JD, Verma VB, Mirin RP, Coleman JJ. Directed self-assembly of InAs quantum dots on nano-oxide templates Applied Physics Letters. 98: 141112. DOI: 10.1063/1.3579253 |
0.824 |
|
| 2011 |
Dias NL, Garg A, Reddy U, Young JD, Bassett KP, Li X, Coleman JJ. Experimental verification of reduced intersubband scattering in ordered nanopore lattices Applied Physics Letters. 98: 071109. DOI: 10.1063/1.3554763 |
0.756 |
|
| 2010 |
Yoon J, Jo S, Chun IS, Jung I, Kim HS, Meitl M, Menard E, Li X, Coleman JJ, Paik U, Rogers JA. GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies. Nature. 465: 329-33. PMID 20485431 DOI: 10.1038/Nature09054 |
0.386 |
|
| 2010 |
Giannopoulos AV, Long CM, Verma V, Coleman JJ, Choquette KD. Approaches for electrical injection into photonic crystal nanocavities 2010 Ieee Photonics Society Winter Topicals Meeting Series, Wtm 2010. 147-148. DOI: 10.1109/PHOTWTM.2010.5421921 |
0.505 |
|
| 2010 |
Dias NL, Garg A, Young JD, Reddy U, Coleman JJ. Site-controlled, high density InAs quantum dots by nanoscale selective area epitaxy Photonics. 528-529. DOI: 10.1109/Photonics.2010.5698994 |
0.797 |
|
| 2010 |
Dias NL, Garg A, Young JD, Reddy U, Verma VB, Bassett K, Li X, Coleman JJ. Reduced scattering rate in nanopore structures Photonics. 84-85. DOI: 10.1109/Photonics.2010.5698769 |
0.782 |
|
| 2010 |
Verma VB, Reddy U, Dias NL, Bassett KP, Li X, Coleman JJ. Patterned Quantum Dot Molecule Laser Fabricated by Electron Beam Lithography and Wet Chemical Etching Ieee Journal of Quantum Electronics. 46: 1827-1833. DOI: 10.1109/Jqe.2010.2047246 |
0.843 |
|
| 2009 |
Mawst LJ, Park JH, Rathi MK, Kuech TF, Verma VB, Coleman JJ. Selective MOCVD growth of InGaAs/GaAs and InGaAs/InP quantum dots employing diblock copolymer nanopatterning Proceedings of Spie - the International Society For Optical Engineering. 7224. DOI: 10.1117/12.810882 |
0.733 |
|
| 2009 |
Carlson CG, Dragic PD, Price RK, Coleman JJ, Swenson GR. A narrow-linewidth, Yb fiber-amplifier-based upper atmospheric Doppler temperature lidar Ieee Journal On Selected Topics in Quantum Electronics. 15: 451-461. DOI: 10.1109/Jstqe.2009.2012403 |
0.314 |
|
| 2009 |
Verma VB, Elarde VC, Coleman JJ. An Analytical Model for the Ordered Nanopore Array Diode Laser Ieee Journal of Quantum Electronics. 45: 10-20. DOI: 10.1109/Jqe.2008.2004749 |
0.815 |
|
| 2009 |
Verma VB, Coleman JJ. Intersubband selection and sum rules in a patterned inverse quantum dot array Journal of Applied Physics. 106. DOI: 10.1063/1.3194321 |
0.384 |
|
| 2009 |
Verma VB, Coleman JJ. A parametric analysis of the density of states and intraband energy gaps in an ordered nanopore array diode laser Journal of Applied Physics. 105. DOI: 10.1063/1.3081647 |
0.414 |
|
| 2009 |
Verma VB, Elarde VC, Coleman JJ. Low-temperature electroluminescence from an ordered nanopore array diode laser Microelectronics Journal. 40: 584-587. DOI: 10.1016/J.Mejo.2008.06.027 |
0.804 |
|
| 2008 |
Carlson CG, Dragic PD, Graf BW, Price RK, Coleman JJ, Swenson GR. High power Yb-doped fiber laser-based LIDAR for space weather Proceedings of Spie - the International Society For Optical Engineering. 6873. DOI: 10.1117/12.764982 |
0.308 |
|
| 2008 |
Elarde VC, Tobin KE, Price RK, Verma VB, Coleman JJ. Curved waveguide array diode lasers for high-brightness applications Ieee Photonics Technology Letters. 20: 1085-1087. DOI: 10.1109/Lpt.2008.924299 |
0.802 |
|
| 2008 |
Elarde VC, Coleman JJ. A Novel Ordered Nanopore Array Diode Laser Ieee Photonics Technology Letters. 20: 240-242. DOI: 10.1109/Lpt.2007.912978 |
0.768 |
|
| 2008 |
Verma VB, Coleman JJ. High density patterned quantum dot arrays fabricated by electron beam lithography and wet chemical etching Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 431-432. DOI: 10.1109/LEOS.2008.4688675 |
0.609 |
|
| 2008 |
Coleman JJ. Lasers with nanopatterned active regions Optics Infobase Conference Papers. DOI: 10.1109/CLEO.2008.4551554 |
0.409 |
|
| 2008 |
Kim YK, Elarde VC, Long CM, Coleman JJ, Choquette KD. Electrically injected InGaAs/GaAs photonic crystal membrane light emitting microcavity with spatially localized gain Journal of Applied Physics. 104. DOI: 10.1063/1.3040690 |
0.747 |
|
| 2008 |
Verma VB, Coleman JJ. High density patterned quantum dot arrays fabricated by electron beam lithography and wet chemical etching Applied Physics Letters. 93: 111117. DOI: 10.1063/1.2981207 |
0.436 |
|
| 2008 |
Price RK, Verma VB, Elarde VC, Coleman JJ. Internal loss, modal characteristics, and bend loss of asymmetric cladding ridge waveguide lasers at 850 nm Journal of Applied Physics. 103. DOI: 10.1063/1.2824887 |
0.766 |
|
| 2008 |
Chun I, Verma V, Elarde V, Kim S, Zuo J, Coleman J, Li X. InGaAs/GaAs 3D architecture formation by strain-induced self-rolling with lithographically defined rectangular stripe arrays Journal of Crystal Growth. 310: 2353-2358. DOI: 10.1016/J.Jcrysgro.2007.11.044 |
0.734 |
|
| 2008 |
Kim TJ, Yoon JJ, Kim YD, Aspnes DE, Klein MV, Ko DS, Kim YW, Elarde VC, Coleman JJ. Analysis of interface layers by spectroscopic ellipsometry Applied Surface Science. 255: 640-642. DOI: 10.1016/J.Apsusc.2008.07.005 |
0.699 |
|
| 2007 |
Price RK, Verma VB, Tobin KE, Elarde VC, Coleman JJ. Y-Branch surface-etched distributed Bragg reflector lasers at 850 nm for optical heterodyning Ieee Photonics Technology Letters. 19: 1610-1612. DOI: 10.1109/Lpt.2007.904914 |
0.775 |
|
| 2007 |
Verma VB, Price RK, Elarde VC, Coleman JJ. Y-branch surface etched distributed bragg reflector lasers at 850nm for optical heterodyning Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 502-503. DOI: 10.1109/LEOS.2007.4382499 |
0.607 |
|
| 2007 |
Price RK, Verma VB, Tobin KE, Hsieh KC, Elarde VC, Coleman JJ. Intrinsic parameter and modal characteristics of asymmetric cladding ridge waveguide lasers Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 933-934. DOI: 10.1109/LEOS.2006.279153 |
0.609 |
|
| 2007 |
Tobin KE, Price RK, Elarde VC, Verma VB, Coleman JJ. Optical heterodyning of narrow-linewidth surface etched distributed Bragg reflector laser diodes Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 199-200. DOI: 10.1109/LEOS.2006.278979 |
0.616 |
|
| 2007 |
Kim YK, Elarde VC, Coleman JJ, Choquette KD. Electrically injected photonic crystal light emitters with spatially localized gain Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting-Leos. 617-618. DOI: 10.1109/LEOS.2006.278828 |
0.307 |
|
| 2007 |
Coleman JJ. Engineered quantum dots for lasers Optics Infobase Conference Papers. DOI: 10.1109/CLEOPR.2007.4391211 |
0.354 |
|
| 2007 |
Elarde VC, Coleman JJ. Three-dimensional quantization from an ordered nanopore array diode laser Optics Infobase Conference Papers. DOI: 10.1109/CLEO.2007.4452486 |
0.395 |
|
| 2007 |
Highland M, Gundrum BC, Koh YK, Averback RS, Cahill DG, Elarde VC, Coleman JJ, Walko DA, Landahl EC. Ballistic-phonon heat conduction at the nanoscale as revealed by time-resolved x-ray diffraction and time-domain thermoreflectance Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.075337 |
0.725 |
|
| 2007 |
Kim TJ, Ghong TH, Kim YD, Aspnes DE, Klein MV, Ko DS, Kim YW, Elarde VC, Coleman JJ. Investigation of effective-medium approximation, alloy, average-composition, and graded-composition models for interface analysis by spectroscopic ellipsometry Journal of Applied Physics. 102. DOI: 10.1063/1.2781519 |
0.705 |
|
| 2007 |
Price RK, Elarde VC, Coleman JJ. Scattering loss and effective index step of asymmetric cladding surface-etched distributed Bragg reflector lasers at 850 nm Journal of Applied Physics. 101. DOI: 10.1063/1.2696253 |
0.764 |
|
| 2007 |
Elarde VC, Coleman JJ. Nanoscale selective area epitaxy for optoelectronic devices Progress in Quantum Electronics. 31: 225-257. DOI: 10.1016/J.Pquantelec.2007.08.001 |
0.758 |
|
| 2006 |
Yeoh T, Mason M, Feinberg Z, Leung M, Tasci M, Elarde V, Coleman JJ. Insitu Observation of the Formation Dynamics of Nanohelices Mrs Proceedings. 924. DOI: 10.1557/Proc-0924-Z06-06 |
0.673 |
|
| 2006 |
Coleman J. Narrowing the linewidth of 852nm diode lasers Spie Newsroom. DOI: 10.1117/2.1200603.0177 |
0.495 |
|
| 2006 |
Price RK, Elarde VC, Coleman JJ. 850 nm asymmetric cladding surface etched DBR lasers with narrow spectral linewidth Proceedings of Spie - the International Society For Optical Engineering. 6133. DOI: 10.1117/12.646204 |
0.356 |
|
| 2006 |
Price RK, Borchardt JJ, Elarde VC, Swint RB, Coleman JJ. Narrow-linewidth asymmetric cladding distributed Bragg reflector semiconductor lasers at 850 nm Ieee Photonics Technology Letters. 18: 97-99. DOI: 10.1109/Lpt.2005.860393 |
0.833 |
|
| 2006 |
Price RK, Elarde VC, Coleman JJ. Widely tunable 850-nm metal-filled asymmetric cladding distributed bragg reflector lasers Ieee Journal of Quantum Electronics. 42: 667-674. DOI: 10.1109/Jqe.2006.876715 |
0.783 |
|
| 2006 |
Elarde VC, Coleman JJ. Spectral and threshold performance of patterned quantum dot lasers Physica Status Solidi C: Conferences. 3: 508-511. DOI: 10.1002/Pssc.200564157 |
0.786 |
|
| 2005 |
Rangarajan R, Elarde VC, Coleman JJ. Thermal stability of InGaAs quantum dots under large temperature transients Materials Research Society Symposium Proceedings. 829: 55-60. DOI: 10.1557/Proc-829-B1.9 |
0.739 |
|
| 2005 |
Elarde VC, Cueva GR, Coleman JJ. InGaAs quantum dot lasers by selective area MOCVD growth 2005 5th Ieee Conference On Nanotechnology. 1: 571-573. DOI: 10.1109/NANO.2005.1500778 |
0.406 |
|
| 2005 |
Elarde VC, Rangarajan R, Borchardt JJ, Coleman JJ. Room-temperature operation of patterned quantum-dot lasers fabricated by electron beam lithography and selective area metal-organic chemical vapor deposition Ieee Photonics Technology Letters. 17: 935-937. DOI: 10.1109/Lpt.2005.844555 |
0.788 |
|
| 2005 |
Elarde VC, Bryce AC, Coleman JJ. High performance laser with nanopatterned active layer by selective area epitaxy Electronics Letters. 41: 1122-1124. DOI: 10.1049/El:20052936 |
0.761 |
|
| 2004 |
Priest JA, Faircloth BO, Swint RB, Coleman JJ, Forbes DV, Zediker MS. Development of high-brightness high-power fiber laser pump sources Proceedings of Spie. 5336: 45-48. DOI: 10.1117/12.531594 |
0.796 |
|
| 2004 |
Swint RB, Yeoh TS, Elarde VC, Coleman JJ, Zediker MS. Curved waveguides for spatial mode filters in semiconductor lasers Ieee Photonics Technology Letters. 16: 12-14. DOI: 10.1109/Lpt.2003.818933 |
0.803 |
|
| 2004 |
Yeoh TS, Swint RB, Elarde VC, Coleman JJ. The role of the InGaAs surface in selective area epitaxy of quantum dots by indium segregation Applied Physics Letters. 84: 3031-3033. DOI: 10.1063/1.1705731 |
0.794 |
|
| 2004 |
Elarde VC, Yeoh TS, Rangarajan R, Coleman JJ. Controlled fabrication of InGaAs quantum dots by selective area epitaxy MOCVD growth Journal of Crystal Growth. 272: 148-153. DOI: 10.1016/J.Jcrysgro.2004.08.041 |
0.775 |
|
| 2003 |
Swint RB, Yeoh TS, Elarde VC, Zediker MS, Coleman JJ. High power single lateral mode diode lasers High-Power Lasers and Applications. 4973: 10-17. DOI: 10.1117/12.482630 |
0.806 |
|
| 2003 |
Yeoh TS, Liu CP, Swint RB, Gaur A, Elarde VC, Coleman JJ. Nano on nano Ieee Circuits and Devices Magazine. 19: 26-31. DOI: 10.1109/Mcd.2003.1203175 |
0.798 |
|
| 2002 |
Swint RB, Huber AE, Yeoh TS, Woo CY, Coleman JJ, Faircloth BO, Zediker MS. 650-mW single lateral mode power from tapered and flared buried ridge laser Ieee Photonics Technology Letters. 14: 1237-1239. DOI: 10.1109/Lpt.2002.801072 |
0.798 |
|
| 2002 |
Yeoh TS, Swint RB, Gaur A, Elarde VC, Coleman JJ. Selective growth of InAs quantum dots by metalorganic chemical vapor deposition Ieee Journal On Selected Topics in Quantum Electronics. 8: 833-838. DOI: 10.1109/Jstqe.2002.801735 |
0.808 |
|
| 2002 |
Swint RB, Huber AE, Yeoh TS, Woo CY, Coleman JJ, Faircloth BO, Zediker MS. 900-mW high brightness buried ridge lasers by selective area epitaxy Ieee Photonics Technology Letters. 14: 441-443. DOI: 10.1109/68.992571 |
0.8 |
|
| 2002 |
Swint RB, Woo CY, Huber AE, Roh SD, Coleman JJ, Faircloth BO, Zediker MS. A novel separate lateral confinement quantum-well heterostructure laser Ieee Photonics Technology Letters. 14: 134-136. DOI: 10.1109/68.980465 |
0.813 |
|
| 2002 |
Swint RB, Elarde VC, Raychaudhuri S, Coleman JJ. Surface emitting lasers by selective area epitaxy for optical clock distribution Electronics Letters. 38: 794-795. DOI: 10.1049/El:20020537 |
0.801 |
|
| 2001 |
Yeoh TS, Liu CP, Kim YW, Coleman JJ. Evolution of Coherent InAs Quantum Dots Above the Coherent Critical Thickness Window by Metalorganic Chemical Vapor Deposition Mrs Proceedings. 672. DOI: 10.1557/Proc-671-Q8.7 |
0.424 |
|
| 2001 |
Huber AE, Yeoh TS, Swint RB, Woo CY, Lee KE, Roh SD, Coleman JJ, Faircloth BO, Zediker MS. Novel design for high-power single-lateral-mode lasers Ieee Photonics Technology Letters. 13: 1064-1066. DOI: 10.1109/68.950736 |
0.786 |
|
| 2001 |
Yeoh TS, Liu CP, Swint RB, Huber AE, Roh SD, Woo CY, Lee KE, Coleman JJ. Epitaxy of InAs quantum dots on self-organized two-dimensional InAs islands by atmospheric pressure metalorganic chemical vapor deposition Applied Physics Letters. 79: 221-223. DOI: 10.1063/1.1379981 |
0.796 |
|
| 2000 |
Coleman J, Deppe D, Bimberg D, Arakawa Y. Introduction to the issue on nanostructures and quantum dots Ieee Journal of Selected Topics in Quantum Electronics. 6: 405-407. DOI: 10.1109/Jstqe.2000.865095 |
0.582 |
|
| 2000 |
Roh SD, Yeoh TS, Swint RB, Huber AE, Woo CY, Hughes JS, Coleman JJ. Dual-wavelength InGaAs-GaAs ridge waveguide distributed Bragg reflector lasers with tunable mode separation Ieee Photonics Technology Letters. 12: 1307-1309. DOI: 10.1109/68.883812 |
0.792 |
|
| 2000 |
Edman CF, Swint RB, Gurtner C, Formosa RE, Roh SD, Lee KE, Swanson PD, Ackley DE, Coleman JJ, Heller MJ. Electric field directed assembly of an InGaAs LED onto silicon circuitry Ieee Photonics Technology Letters. 12: 1198-1200. DOI: 10.1109/68.874234 |
0.749 |
|
| 2000 |
Roh SD, Lee KE, Hughes JS, Coleman JJ. Single and tunable dual-wavelength operation of an InGaAs-GaAs ridge waveguide distributed Bragg reflector laser Ieee Photonics Technology Letters. 12: 16-18. DOI: 10.1109/68.817432 |
0.452 |
|
| 2000 |
Coleman JJ. Strained-layer InGaAs quantum-well heterostructure lasers Ieee Journal On Selected Topics in Quantum Electronics. 6: 1008-1013. DOI: 10.1109/2944.902149 |
0.471 |
|
| 2000 |
Li X, Bohn PW, Kim J, White JO, Coleman JJ. Spatially resolved band-edge emission from partially coalesced GaN pyramids prepared by epitaxial lateral overgrowth Applied Physics Letters. 76: 3031-3033. DOI: 10.1063/1.126569 |
0.322 |
|
| 1999 |
Roh SD, Swint RB, Jones AM, Yeoh TS, Huber AE, Hughes JS, Coleman JJ. Dual-wavelength asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector lasers Ieee Photonics Technology Letters. 11: 15-17. DOI: 10.1109/68.736375 |
0.802 |
|
| 1999 |
Purchase K, Brady D, Roh S, Lammert R, Osowski M, Coleman J, Hughes J. The distributed Bragg pulse shaper: demonstration and model Journal of Lightwave Technology. 17: 621-628. DOI: 10.1109/50.754792 |
0.363 |
|
| 1999 |
Li X, Bohn PW, Coleman JJ. Impurity states are the origin of yellow-band emission in GaN structures produced by epitaxial lateral overgrowth Applied Physics Letters. 75: 4049-4051. DOI: 10.1063/1.125532 |
0.321 |
|
| 1999 |
Jones AM, Jewell JL, Mabon JC, Reuter EE, Bishop SG, Roh SD, Coleman JJ. Long-wavelength InGaAs quantum wells grown without strain-induced warping on InGaAs compliant membranes above a GaAs substrate Applied Physics Letters. 74: 1000-1002. DOI: 10.1063/1.123435 |
0.377 |
|
| 1998 |
Li X, Bishop SG, Coleman JJ. GaN: From Selective Area to Epitaxial Lateral Overgrowth Mrs Proceedings. 537. DOI: 10.1557/Proc-537-G4.8 |
0.315 |
|
| 1998 |
Osowski ML, Coleman JJ. Integrated photonic devices by selective-area MOCVD Proceedings of Spie - the International Society For Optical Engineering. 3290: 8-19. DOI: 10.1117/12.298236 |
0.418 |
|
| 1998 |
Osowski ML, Hughes JS, Coleman JJ. Effect of p-contact metallization on the performance of gain-coupled DFB's with oxide-defined surface gratings Ieee Photonics Technology Letters. 10: 926-928. DOI: 10.1109/68.681272 |
0.391 |
|
| 1998 |
Jones AM, Coleman JJ, Lent B, Moore AH, Bonner WA. Strained-layer InGaAs-GaAs-InGaP buried-heterostructure quantum-well lasers on a low-composition InGaAs substrate by selective-area MOCVD Ieee Photonics Technology Letters. 10: 489-491. DOI: 10.1109/68.662570 |
0.519 |
|
| 1998 |
Coleman JJ. Breaking through the barriers: Recent approaches to semiconductor lasers for photonic integration Ieee Circuits and Devices Magazine. 14. DOI: 10.1109/101.735793 |
0.334 |
|
| 1998 |
Nakamura F, Kim YD, Yoon E, Forbes DV, Coleman JJ. Thickness monitoring of GaAs growth by surface photoabsorption in metalorganic chemical vapor deposition Journal of Applied Physics. 83: 775-778. DOI: 10.1063/1.366757 |
0.36 |
|
| 1998 |
Li X, Bishop SG, Coleman JJ. GaN epitaxial lateral overgrowth and optical characterization Applied Physics Letters. 73: 1179-1181. DOI: 10.1063/1.122121 |
0.332 |
|
| 1998 |
Li X, Kim S, Reuter EE, Bishop SG, Coleman JJ. The incorporation of arsenic in GaN by metalorganic chemical vapor deposition Applied Physics Letters. 72: 1990-1992. DOI: 10.1063/1.121242 |
0.316 |
|
| 1997 |
Osowski ML, Panepucci R, Reuter EE, Bishop SG, Adesida I, Coleman JJ. Fabrication and characterization of InGaAs-GaAs quantum wire arrays by selective-area metalorganic chemical vapor deposition Proceedings of Spie. 2918: 166-181. DOI: 10.1117/12.265363 |
0.447 |
|
| 1997 |
Lammert RM, Smith GM, Hughes JS, Osowski ML, Jones AM, Coleman JJ. Monolithic integration of MQW wavelength tunable DBR lasers with external cavity electroabsorption modulators by selective-area MOCVD Proceedings of Spie. 2918: 155-165. DOI: 10.1117/12.265362 |
0.475 |
|
| 1997 |
Jones AM, Coleman JJ. Integrated optoelectronic devices by selective-area epitaxy Proceedings of Spie - the International Society For Optical Engineering. 2918: 146-154. DOI: 10.1117/12.265361 |
0.439 |
|
| 1997 |
Lammert RM, Coleman JJ. Laser devices by selective-area epitaxy Proceedings of Spie - the International Society For Optical Engineering. 3006: 2-14. DOI: 10.1117/12.264213 |
0.354 |
|
| 1997 |
Tsang W, Coleman J, Dapkus P, Coldren L. Introduction to the issue on optoelectronic materials and processing Ieee Journal of Selected Topics in Quantum Electronics. 3: 709-711. DOI: 10.1109/Jstqe.1997.640625 |
0.457 |
|
| 1997 |
Osowski ML, Hughes JS, Lammert RM, Coleman JJ. An asymmetric cladding gain-coupled DFB laser with oxide defined metal surface grating by MOCVD Ieee Photonics Technology Letters. 9: 1460-1462. DOI: 10.1109/68.634708 |
0.456 |
|
| 1997 |
Lammert R, Jones A, Youtsey C, Hughes J, Roh S, Adesida I, Coleman J. InGaAsP-InP ridge-waveguide DBR lasers with first-order surface gratings fabricated using CAIBE Ieee Photonics Technology Letters. 9: 1445-1447. DOI: 10.1109/68.634703 |
0.483 |
|
| 1997 |
Jones AM, Lent B, Kluender JF, Roh SD, Moore AH, Bonner WA, Coleman JJ. Aluminum-free strained-layer lasers emitting at 1.14 μm on low-composition InGaAs:n substrates by metalorganic chemical vapor deposition Ieee Photonics Technology Letters. 9: 1319-1321. DOI: 10.1109/68.623249 |
0.426 |
|
| 1997 |
Lammert RM, Roh SD, Hughes JS, Osowski ML, Coleman JJ. MQW DBR lasers with monolithically integrated external-cavity electroabsorption modulators fabricated without modification of the active region Ieee Photonics Technology Letters. 9: 566-568. DOI: 10.1109/68.588102 |
0.406 |
|
| 1997 |
Osowski M, Panepucci R, Adesida I, Coleman J. A strained-layer InGaAs-GaAs asymmetric cladding gain-coupled DFB laser with titanium surface gratings by metalorganic chemical vapor deposition Ieee Photonics Technology Letters. 9: 422-424. DOI: 10.1109/68.559375 |
0.48 |
|
| 1997 |
Roh SD, Hughes JS, Lammert RM, Osowski ML, Beernink KJ, Papen GC, Coleman JJ. Asymmetric cladding InGaAs-GaAs-AlGaAs ridge waveguide distributed Bragg reflector lasers with operating wavelengths of 915-935 nm Ieee Photonics Technology Letters. 9: 285-287. DOI: 10.1109/68.556048 |
0.445 |
|
| 1997 |
Osowski ML, Lammert RM, Coleman JJ. A dual-wavelength source with monolithically integrated electroabsorption modulators and Y-junction coupler by selective-area MOCVD Ieee Photonics Technology Letters. 9: 158-160. DOI: 10.1109/68.553073 |
0.449 |
|
| 1997 |
Lammert RM, Hughes JS, Roh SD, Osowski ML, Jones AM, Coleman JJ. Low-threshold narrow-linewidth InGaAs-GaAs ridge-waveguide DBR lasers with first-order surface gratings Ieee Photonics Technology Letters. 9: 149-151. DOI: 10.1109/68.553068 |
0.473 |
|
| 1997 |
Coleman J, Lammert R, Osowski M, Jones A. Progress in InGaAs-GaAs selective-area MOCVD toward photonic integrated circuits Ieee Journal of Selected Topics in Quantum Electronics. 3: 874-884. DOI: 10.1109/2944.640641 |
0.433 |
|
| 1997 |
Li X, Coleman JJ. Depth-resolved and excitation power dependent cathodoluminescence study of GaN films grown by metalorganic chemical vapor deposition Applied Physics Letters. 70: 438-440. DOI: 10.1063/1.118174 |
0.316 |
|
| 1997 |
Li X, Jones AM, Roh SD, Turnbull DA, Bishop SG, Coleman JJ. Characteristics of GaN stripes grown by selective-area metalorganic chemical vapor deposition Journal of Electronic Materials. 26: 306-310. DOI: 10.1007/S11664-997-0169-6 |
0.345 |
|
| 1997 |
Kim YD, Nakamura F, Yoon E, Forbes DV, Li X, Coleman JJ. Surface photoabsorption monitoring of the growth of GaAs and InGaAs at 650°C by MOCVD Journal of Electronic Materials. 26: 1164-1168. DOI: 10.1007/S11664-997-0014-Y |
0.379 |
|
| 1996 |
Coleman JJ. Integrated strained-layer photonic devices by selective area epitaxy Proceedings of Spie. 2610: 94-99. DOI: 10.1117/12.230072 |
0.518 |
|
| 1996 |
Little LM, Beernink KJ, Papen GC, Coleman JJ. Performance characteristics of a narrow-linewidth distributed-Bragg-reflector laser for optical remote sensing systems Ieee Photonics Technology Letters. 8: 1302-1304. DOI: 10.1109/68.536635 |
0.436 |
|
| 1996 |
Lammert R, Smith G, Hughes S, Osowski M, Jones A, Coleman J. MQW wavelength-tunable DBR lasers with monolithically integrated external cavity electroabsorption modulators with low-driving voltages fabricated by selective-area MOCVD Ieee Photonics Technology Letters. 8: 797-799. DOI: 10.1109/68.502098 |
0.321 |
|
| 1996 |
Smith GM, Hughes JS, Lammert RM, Osowski ML, Papen GC, Verdeyen JT, Coleman JJ. Very narrow linewidth asymmetric cladding InGaAs-GaAs ridge waveguide distributed Bragg reflector lasers Ieee Photonics Technology Letters. 8: 476-478. DOI: 10.1109/68.491088 |
0.492 |
|
| 1996 |
Lammert RM, Forbes DV, Smith GM, Osowski ML, Coleman JJ. InGaAs-GaAs quantum-well lasers with monolithically integrated intracavity electroabsorption modulators by selective-area MOCVD Ieee Photonics Technology Letters. 8: 78-80. DOI: 10.1109/68.475784 |
0.453 |
|
| 1996 |
Smith GM, Hughes JS, Lammert RM, Osowski ML, Papen GC, Verdeyen JT, Coleman JJ. Wavelength-tunable asymmetric cladding ridge-waveguide distributed Bragg reflector lasers with very narrow linewidth Ieee Journal of Quantum Electronics. 32: 1225-1229. DOI: 10.1109/3.517022 |
0.457 |
|
| 1996 |
Turnbull DA, Li X, Gu SQ, Reuter EE, Coleman JJ, Bishop SG. Luminescence studies of GaN grown on GaN and GaN/AlN buffer layers by metalorganic chemical vapor deposition Journal of Applied Physics. 80: 4609-4614. DOI: 10.1063/1.363558 |
0.346 |
|
| 1996 |
Turkot BA, Lagow BW, Robertson IM, Forbes DV, Coleman JJ, Rehn LE, Baldo PM. Depth Dependence Of Ion Implantation Damage In Alxga1-Xas/Gaas Heterostructures Journal of Applied Physics. 80: 4366-4371. DOI: 10.1063/1.363395 |
0.332 |
|
| 1996 |
Li X, Gu SQ, Reuter EE, Verdeyen JT, Bishop SG, Coleman JJ. Effect of e‐beam irradiation on ap‐njunction GaN light emitting diode Journal of Applied Physics. 80: 2687-2690. DOI: 10.1063/1.363131 |
0.332 |
|
| 1996 |
Kim YD, Nakamura F, Yoon E, Forbes DV, Coleman JJ. Monolayer epitaxy of GaAs at 650 °C by metal–organic chemical‐vapor deposition with surface photoabsorption monitoring Applied Physics Letters. 69: 4209-4211. DOI: 10.1063/1.116988 |
0.355 |
|
| 1996 |
Osowski ML, Panepucci R, Turnbull DA, Gu SQ, Jones AM, Bishop SG, Adesida I, Coleman JJ. Lateral inhomogeneity in InGaAs–GaAs quantum wire arrays by selective‐area metalorganic chemical vapor deposition Applied Physics Letters. 68: 1087-1089. DOI: 10.1063/1.115721 |
0.422 |
|
| 1996 |
Kluender JF, Jones AM, Lammert RM, Baker JE, Coleman JJ. Growth, characterization and modeling of InxGa1−xP stripes by selective-area MOCVD Journal of Electronic Materials. 25: 1514-1520. DOI: 10.1007/Bf02655392 |
0.334 |
|
| 1996 |
Panepucci R, Osowski M, Turnbull D, Gu S, Bishop S, Coleman J, Adesida I. Inhomogeneity in the fabrication of InGaAs/GaAs quantum wire arrays by selective-area metalorganic chemical vapor deposition Superlattices and Microstructures. 20: 111-116. DOI: 10.1006/Spmi.1996.0055 |
0.436 |
|
| 1995 |
Li X, Jones AM, Roh SD, Turnbull DA, Reuter EE, Gu SQ, Bishop SG, Coleman JJ. Correlation of surface morphology and optical properties of GaN by conventional and selective-area MOCVD Mrs Proceedings. 395. DOI: 10.1557/Proc-395-943 |
0.336 |
|
| 1995 |
Purchase KG, Brady DJ, Smith GM, Roh SD, Osowski ML, Coleman JJ. Integrated optical pulse shapers for high-bandwidth data packet encoding Proceedings of Spie. 2613: 43-51. DOI: 10.1117/12.228876 |
0.309 |
|
| 1995 |
Lammert RM, Mena PV, Forbes DV, Osowski ML, Kang SM, Coleman JJ. Monolithic integration of strained-layer InGaAs/GaAs/AlGaAs lasers with photodiodes by selective-area MOCVD Proceedings of Spie. 2613: 24-31. DOI: 10.1117/12.228874 |
0.442 |
|
| 1995 |
Smith GM, Forbes DV, Lammert RM, Coleman JJ. Metallization to asymmetric cladding separate confinement heterostructure lasers Proceedings of Spie. 2613: 107-114. DOI: 10.1117/12.228871 |
0.332 |
|
| 1995 |
Smith GM, Forbes DV, Lammert RM, Coleman JJ. Asymmetric cladding-ridge waveguide laser by selective-area MOCVD Ieee Photonics Technology Letters. 7: 1255-1257. DOI: 10.1109/68.473463 |
0.454 |
|
| 1995 |
Han H, Forbes DV, Coleman JJ. Self-Aligned High-Quality Total Internal Reflection Mirrors Ieee Photonics Technology Letters. 7: 899-901. DOI: 10.1109/68.404008 |
0.396 |
|
| 1995 |
Lammert RM, Mena PV, Forbes DV, Osowski ML, Kang SM, Coleman JJ. Strained-layer InGaAs-GaAs-AlGaAs lasers with monolithically integrated photodiodes by selective-area MOCVD Ieee Photonics Technology Letters. 7: 247-250. DOI: 10.1109/68.372735 |
0.448 |
|
| 1995 |
Han H, Forbes DV, Coleman JJ. InGaAs-AlGaAs-GaAs Strained-Layer Quantum-Well Heterostructure Square Ring Lasers Ieee Journal of Quantum Electronics. 31: 1994-1997. DOI: 10.1109/3.469280 |
0.507 |
|
| 1995 |
Han H, Coleman JJ. Two-Dimensional Rectangular Lattice Distributed Feedback Lasers: A Coupled-Mode Analysis of TE Guided Modes Ieee Journal of Quantum Electronics. 31: 1947-1954. DOI: 10.1109/3.469275 |
0.369 |
|
| 1995 |
Fang ZJ, Smith GM, Forbes DV, Coleman JJ. An InGaAs-GaAs strained layer single quantum-well ring laser with a reactive ion-etched tetragonal cavity Ieee Journal of Quantum Electronics. 31: 44-48. DOI: 10.1109/3.341706 |
0.466 |
|
| 1995 |
Smith GM, Forbes DV, Lammert RM, Coleman JJ. Metallization to asymmetric cladding separate confinement heterostructure lasers Applied Physics Letters. 67: 3847-3849. DOI: 10.1063/1.115293 |
0.358 |
|
| 1995 |
Osowski ML, Lammert RM, Forbes DV, Ackley DE, Coleman JJ. Broadband emission from InGaAs-GaAs-AlGaAs LED with integrated absorber by selective-area MOCVD Electronics Letters. 31: 1498-1499. DOI: 10.1049/El:19950982 |
0.466 |
|
| 1995 |
Lammert RM, Smith GM, Forbes DV, Osowski ML, Coleman JJ. Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure lasers with nonabsorbing mirrors by selective-area MOCVD Electronics Letters. 31: 1070-1072. DOI: 10.1049/El:19950742 |
0.463 |
|
| 1995 |
Li X, Forbes DV, Gu SQ, Turnbull DA, Bishop SG, Coleman JJ. A new buffer layer for MOCVD growth of GaN on sapphire Journal of Electronic Materials. 24: 1711-1714. DOI: 10.1007/Bf02676838 |
0.322 |
|
| 1995 |
Jones AM, Osowski ML, Lammert RM, Dantzig JA, Coleman JJ. Growth, characterization, and modeling of ternary InGaAs-GaAs quantum wells by selective-area metalorganic chemical vapor deposition Journal of Electronic Materials. 24: 1631-1636. DOI: 10.1007/Bf02676823 |
0.391 |
|
| 1994 |
Osowski ML, Cockerill TM, Lammert RM, Forbes DV, Ackley DE, Coleman JJ. A strained-layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED by selective-area metalorganic chemical vapor deposition Ieee Photonics Technology Letters. 6: 1289-1292. DOI: 10.1109/68.334816 |
0.465 |
|
| 1994 |
Lammert RM, Cockerill TM, Forbes DV, Coleman JJ. Dual-channel strained-layer in GaAs-GaAs-AlGaAs WDM source with integrated coupler by selective-area MOCVD Ieee Photonics Technology Letters. 6: 1167-1169. DOI: 10.1109/68.329627 |
0.332 |
|
| 1994 |
Lammert RM, Cockerill TM, Forbes DV, Smith GM, Coleman JJ. Submilliampere threshold buried-heterostructure InGaAs/GaAs single quantum well lasers grown by selective-area epitaxy Ieee Photonics Technology Letters. 6: 1073-1075. DOI: 10.1109/68.324672 |
0.504 |
|
| 1994 |
Han H, Holehouse N, Forbes DV, Coleman JJ. Monolithic Serial InGaAs-GaAs-AlGaAs Laser Diode Arrays Ieee Photonics Technology Letters. 6: 1059-1061. DOI: 10.1109/68.324668 |
0.499 |
|
| 1994 |
Cockerill TM, Lammert RM, Forbes DV, Osowski ML, Coleman JJ. Twelve-channel strained-layer InGaAs-GaAs-AlGaAs buried heterostructure quantum well laser array for WDM applications by selective-area MOCVD Ieee Photonics Technology Letters. 6: 786-788. DOI: 10.1109/68.311454 |
0.484 |
|
| 1994 |
Crook AC, Cockerill TM, Forbes DV, Herzinger CM, DeTemple TA, Coleman JJ. Low drive voltage GaAs quantum well electroabsorption modulators obtained with a displaced junction Ieee Photonics Technology Letters. 6: 619-622. DOI: 10.1109/68.285559 |
0.473 |
|
| 1994 |
Fang ZJ, Smith GM, Forbes DV, Coleman JJ. A Corner Reflector InGaAs-GaAs Strained Layer Single Quantum Well Coupled Laser Array Ieee Photonics Technology Letters. 6: 10-12. DOI: 10.1109/68.265874 |
0.488 |
|
| 1994 |
Crook AC, Herzinger CM, Cockerill TM, Forbes DV, Honig J, DeTemple TA, Coleman JJ, White IA, Besse P-. Modal properties of depressed cladding semiconductor waveguides and lasers Ieee Journal of Quantum Electronics. 30: 2817-2826. DOI: 10.1109/3.362728 |
0.421 |
|
| 1994 |
Cockerill TM, Forbes DV, Dantzig JA, Coleman JJ. Strained-layer InGaAs-GaAs-AlGaAs buried-heterostructure quantum-well lasers by three-step selective-area metalorganic chemical vapor deposition Ieee Journal of Quantum Electronics. 30: 441-445. DOI: 10.1109/3.283791 |
0.505 |
|
| 1994 |
Coleman JJ, Miller BI. Introduction to the Special Issue on Strained-Layer Optoelectronic Materials and Devices Ieee Journal of Quantum Electronics. 30: 348-349. DOI: 10.1109/3.283782 |
0.402 |
|
| 1994 |
Coleman JJ, Beernink KJ. Experimental gain characteristics and barrier lasing in strained-layer InGaAs-GaAs-AlGaAs quantum well heterostructure lasers Journal of Applied Physics. 75: 1879-1882. DOI: 10.1063/1.356333 |
0.516 |
|
| 1994 |
Smith GM, Hughes JS, Lammert RM, Osowski ML, Coleman JJ. Wavelength tunable two-pad ridge waveguide distributed Bragg reflector InGaAs-GaAs quantum well lasers Electronics Letters. 30: 1313-1314. DOI: 10.1049/El:19940916 |
0.502 |
|
| 1994 |
Smith GM, Hughes JS, Osowski ML, Forbes DV, Coleman JJ. Ridge waveguide distributed Bragg reflector InGaAs/GaAs quantum well lasers Electronics Letters. 30: 651-653. DOI: 10.1049/El:19940426 |
0.531 |
|
| 1994 |
Forbes DV, Coleman JJ, Klatt JK, Averback RS. Ion beam mixing characteristics of MOCVD grown InGaAs/GaAs superlattices Journal of Electronic Materials. 23: 175-178. DOI: 10.1007/Bf02655265 |
0.342 |
|
| 1994 |
Cockerill TM, Forbes DV, Han H, Turkot BA, Dantzig JA, Robertson IM, Coleman JJ. Wavelength tuning in strained layer InGaAs-GaAs-AlGaAs quantum well lasers by selective-area MOCVD Journal of Electronic Materials. 23: 115-119. DOI: 10.1007/Bf02655256 |
0.501 |
|
| 1993 |
Klatt JL, Averback RS, Forbes DV, Coleman JJ. Interfacial damage in ion-irradiated GaAs/AlAs superlattices. Physical Review. B, Condensed Matter. 48: 17629-17632. PMID 10008390 DOI: 10.1103/Physrevb.48.17629 |
0.328 |
|
| 1993 |
Forbes D, Coleman J, Klatt J, Averback R. Temperature Dependence of Ion Beam Mixing of Ingaas Marker Layers in GaAs Mrs Proceedings. 311. DOI: 10.1557/Proc-311-227 |
0.324 |
|
| 1993 |
Cockerill TM, Forbes DV, Coleman JJ, Beernink KJ, Murison RF, Moore AH. High-power InGaAs-GaAs 1064 nm strained-layer lasers by metalorganic chemical vapor deposition (MOCVD) Proceedings of Spie. 1850: 140-144. DOI: 10.1117/12.146900 |
0.5 |
|
| 1993 |
Smith GM, Forbes DV, Coleman JJ, Verdeyen JT. Optical Properties Of Reactive Ion Etched Corner Reflector Strained-Layer Ingaas-Gaas-Algaas Quantum-Well Lasers Ieee Photonics Technology Letters. 5: 873-876. DOI: 10.1109/68.238239 |
0.515 |
|
| 1993 |
Cockerill TM, Forbes DV, Han H, Coleman JJ. Monolithic integration of a strained-layer InGaAs-GaAs-AlGaAs quantum-well laser with a passive waveguide by selective-area MOCVD Ieee Photonics Technology Letters. 5: 448-450. DOI: 10.1109/68.212695 |
0.489 |
|
| 1993 |
Griffiths CO, Cooper SL, Klein MV, Forbes DV, Coleman JJ. Depth profiles of strain in In0.10Ga0.90As/GaAs multiquantum well structures obtained by variable-pump wavelength photoluminescence Applied Physics Letters. 63: 2123-2125. DOI: 10.1063/1.110560 |
0.386 |
|
| 1993 |
Cockerill TM, Honig J, Forbes DV, Coleman JJ. Distributed feedback strained layer quantum well heterostructure 980 nm laser fabricated by two-step metalorganic chemical vapor deposition Applied Physics Letters. 62: 820-822. DOI: 10.1063/1.108589 |
0.538 |
|
| 1993 |
Beam EA, Mahajan S, Coleman JJ. Phase separation in In0.3Ga0.7As epitaxial layers Materials Letters. 16: 29-32. DOI: 10.1016/0167-577X(93)90178-Z |
0.384 |
|
| 1992 |
Han H, Favaro ME, Forbes DV, Coleman JJ. In/sub x/Ga/sub 1-x/As-Al/sub y/Ga/sub 1-y/As-GaAs strained-layer quantum-well heterostructure circular ring lasers Ieee Photonics Technology Letters. 4: 817-819. DOI: 10.1109/68.149873 |
0.447 |
|
| 1992 |
Miller LM, Beernink KJ, Verdeyen JT, Coleman JJ, Hughes JS, Smith GM, Honig J, Cockerill TM. Characterization of an InGaAs-GaAs-AlGaAs strained-layer distributed-feedback ridge-waveguide quantum-well heterostructure laser Ieee Photonics Technology Letters. 4: 296-299. DOI: 10.1109/68.127192 |
0.489 |
|
| 1992 |
Coleman JJ, Beernink KJ, Givens ME. Threshold Current Density in Strained Layer Inxga1-Xas-Gaas Quantum-Well Heterostructure Lasers Ieee Journal of Quantum Electronics. 28: 1983-1989. DOI: 10.1109/3.159507 |
0.491 |
|
| 1992 |
Lee SM, Chew WC, Chuang SL, Coleman JJ. Bending loss in optical waveguides for nonplanar laser array applications Journal of Applied Physics. 71: 2513-2520. DOI: 10.1063/1.351369 |
0.394 |
|
| 1992 |
Givens ME, Miller LM, Coleman JJ. Effect of design variations on the threshold current density of Al xGa1-xAs separate confinement heterostructure single quantum well lasers Journal of Applied Physics. 71: 4583-4588. DOI: 10.1063/1.350757 |
0.5 |
|
| 1992 |
Miller LM, Beernink KJ, Hughes JS, Bishop SG, Coleman JJ. Four wavelength distributed feedback ridge waveguide quantum‐well heterostructure laser array Applied Physics Letters. 61: 2964-2966. DOI: 10.1063/1.108032 |
0.449 |
|
| 1992 |
Chen Q, Beyler CA, Dapkus PD, Alwan JJ, Coleman JJ. Use of tertiarybutylarsine in atomic layer epitaxy and laser-assisted atomic layer epitaxy of device quality GaAs Applied Physics Letters. 60: 2418-2420. DOI: 10.1063/1.106991 |
0.614 |
|
| 1992 |
Coleman JJ. Strained-layer quantum well heterostructure lasers Thin Solid Films. 216: 68-71. DOI: 10.1016/0040-6090(92)90871-8 |
0.457 |
|
| 1992 |
Coekerill TM, Honig J, Alwan JJ, Forbes DV, Coleman JJ. Characterization of Electrical and Optical Loss MOCVD Regrown in Interfaces Layer lnGaAs-GaAs Quantum Well Heterostructure Lasers Journal of Crystal Growth. 124: 553-557. DOI: 10.1016/0022-0248(92)90516-L |
0.491 |
|
| 1991 |
Herzinger CM, Swanson PD, Tang TK, Cockerill TM, Miller LM, Givens ME, DeTemple TA, Coleman JJ, Leburton JP. Electroabsorption properties of a single GaAs quantum well. Physical Review. B, Condensed Matter. 44: 13478-13486. PMID 9999550 DOI: 10.1103/Physrevb.44.13478 |
0.413 |
|
| 1991 |
Klatt JL, Alwan J, Coleman JJ, Averback RS. Anisotropic Damage Production at ION Irradiated GaAs/AlAs Interfaces Mrs Proceedings. 235. DOI: 10.1557/Proc-235-235 |
0.311 |
|
| 1991 |
Chen Q, Osinski JS, Beyler CA, Cao M, Dapkus PD, Alwan JJ, Coleman JJ. Laser Assisted Atomic Layer Epitaxy-A Vehicle to Optoelectronic Integration Mrs Proceedings. 222. DOI: 10.1557/Proc-222-109 |
0.653 |
|
| 1991 |
Miller LM, Verdeyen JT, Coleman JJ, Bryan RP, Alwan JJ, Beernink KJ, Hughes JS, Cockerill TM. A distributed feedback ridge waveguide quantum well heterostructure laser Ieee Photonics Technology Letters. 3: 6-8. DOI: 10.1109/68.68030 |
0.483 |
|
| 1991 |
Zmudzinski CA, Zory PS, Lim GG, Miller LM, Beernink KJ, Cockerill TL, Coleman JJ, Hong CS, Figueroa L. Differential Gain in Bulk and Quantum Well Diode Lasers Ieee Photonics Technology Letters. 3: 1057-1060. DOI: 10.1109/68.117999 |
0.486 |
|
| 1991 |
Chen Y-, Wang P, Coleman JJ, Bour DP, Lee KK, Waters RG. Carrier recombination rates in strained-layer InGaAs-GaAs quantum wells Ieee Journal of Quantum Electronics. 27: 1451-1454. DOI: 10.1109/3.89962 |
0.423 |
|
| 1991 |
Lee SM, Chuang SL, Bryan RP, Zmudzinski CA, Coleman JJ. A self-consistent model of a nonplanar quantum-well periodic laser array Ieee Journal of Quantum Electronics. 27: 1886-1899. DOI: 10.1109/3.83391 |
0.445 |
|
| 1991 |
Beernink KJ, Alwan JJ, Coleman JJ. Antiguiding in narrow stripe gain-guided InGaAs-GaAs strained-layer lasers Journal of Applied Physics. 69: 56-60. DOI: 10.1063/1.347656 |
0.448 |
|
| 1991 |
Cockerill TM, Honig J, DeTemple TA, Coleman JJ. Depressed index cladding graded barrier separate confinement single quantum well heterostructure laser Applied Physics Letters. 59: 2694-2696. DOI: 10.1063/1.105887 |
0.442 |
|
| 1991 |
Tang TK, Alwan JJ, Herzinger CM, Cockerill TM, Crook A, DeTemple TA, Coleman JJ, Baker JE. Iso-electronic impurity-induced disordering : AlxGa1-xAs-GaAs/In Applied Physics Letters. 59: 2880-2882. DOI: 10.1063/1.105840 |
0.341 |
|
| 1991 |
Beernink KJ, Miller LM, Cockerill TM, Coleman JJ. Phase-locked ridge waveguide InGaAs-GaAs-AlGaAs strained-layer quantum well heterostructure laser arrays Applied Physics Letters. 59: 3222-3224. DOI: 10.1063/1.105738 |
0.501 |
|
| 1991 |
Beernink KJ, Alwan JJ, Coleman JJ. Wavelength switching in narrow oxide stripe InGaAs-GaAs-AlGaAs strained-layer quantum well heterostructure lasers Applied Physics Letters. 58: 2076-2078. DOI: 10.1063/1.105015 |
0.473 |
|
| 1991 |
Alwan JJ, Honig J, Favaro ME, Beernink KJ, Klatt JL, Averback RS, Coleman JJ, Bryan RP. Index-guided operation in narrow stripe InGaAs-GaAs strained-layer quantum well heterostructure lasers by MeV oxygen implantation Applied Physics Letters. 58: 2058-2060. DOI: 10.1063/1.105009 |
0.439 |
|
| 1991 |
Zou Y, Grodzinski P, Menu EP, Jeong WG, Dapkus PD, Alwan JJ, Coleman JJ. Characterization and determination of the band‐gap discontinuity of the InxGa1−xAs/GaAs pseudomorphic quantum well Applied Physics Letters. 58: 601-603. DOI: 10.1063/1.104570 |
0.402 |
|
| 1991 |
Murison RF, Moore AH, Lee SR, Holehouse N, Dzurko KM, Cockerill TM, Coleman JJ. High power continuous operation of laser diodes at 1064 nm Electronics Letters. 27: 1979-1981. DOI: 10.1049/El:19911226 |
0.444 |
|
| 1991 |
Miller LM, Beernink KJ, Verdeyen JT, Coleman JJ, Hughes JS, Smith GM, Honig J, Cockerill TM. InGaAs-GaAs-AlGaAs strained-layer distributed feedback ridge waveguide quantum well heterostructure laser array Electronics Letters. 27: 1943-1945. DOI: 10.1049/El:19911205 |
0.494 |
|
| 1991 |
Yellen SL, Waters RG, York PK, Beernink KJ, Coleman JJ. Reliable InGaAs quantum well lasers at 1.1 mu m Electronics Letters. 27: 552-554. DOI: 10.1049/El:19910348 |
0.51 |
|
| 1991 |
Kim J, Alwan JJ, Coleman JJ, Wayman CM. Interface characterization of (In,Ga)As/AlGaAs layers grown by metalorganic chemical vapor deposition Materials Letters. 11: 151-154. DOI: 10.1016/0167-577X(91)90070-M |
0.324 |
|
| 1991 |
York PK, Beernink KJ, Kim J, Alwan JJ, Coleman JJ, Wayman CM. Metalorganic chemical vapor deposition of InGaAs-GaAs-AlGaAs strained-layer quantum well lasers Journal of Crystal Growth. 107: 741-750. DOI: 10.1016/0022-0248(91)90551-F |
0.51 |
|
| 1991 |
Bryan RP, Coleman JJ, Averback RS, Klatt JL, Miller LM, Cockerill TM. Multiple quantum well mixing and index-guided quantum well heterostructure lasers by MeV ion implantation Optical and Quantum Electronics. 23. DOI: 10.1007/Bf00624985 |
0.442 |
|
| 1990 |
Gao DS, Kang SM, Bryan RP, Coleman JJ. Modeling of quantum-well lasers for computer-aided analysis of optoelectronic integrated circuits Ieee Journal of Quantum Electronics. 26: 1206-1216. DOI: 10.1109/3.59660 |
0.426 |
|
| 1990 |
Bryan RP, Miller LM, Cockerill TM, Langsjoen SM, Coleman JJ. High-power pulsed operation of an optimized nonplanar corrugated substrate periodic laser diode array Ieee Journal of Quantum Electronics. 26: 222-224. DOI: 10.1109/3.44952 |
0.436 |
|
| 1990 |
York PK, Beernink KJ, Fernandez GE, Coleman JJ. InGaAs-GaAs-AlGaAs strained-layer quantum well lasers by metal-organic chemical vapour deposition Semiconductor Science and Technology. 5: 508-511. DOI: 10.1088/0268-1242/5/6/007 |
0.499 |
|
| 1990 |
Miller LM, Beernink KJ, Cockerill TM, Bryan RP, Favaro ME, Kim J, Coleman JJ, Wayman CM. Characteristics of step-graded separate confinement quantum well lasers with direct and indirect barriers Journal of Applied Physics. 68: 1964-1967. DOI: 10.1063/1.347178 |
0.515 |
|
| 1990 |
Waters RG, York PK, Beernink KJ, Coleman JJ. Viable strained-layer laser at λ=1100 nm Journal of Applied Physics. 67: 1132-1134. DOI: 10.1063/1.345758 |
0.498 |
|
| 1990 |
Xie QH, Fung KK, York PK, Fernandez GE, Eades JA, Coleman JJ. Convergent beam electron diffraction study of lattice distortion in InGaAs/GaAs strained-layer superlattices grown by metalorganic chemical vapor deposition Applied Physics Letters. 57: 1978-1980. DOI: 10.1063/1.103985 |
0.326 |
|
| 1990 |
Beernink KJ, Alwan JJ, Coleman JJ. InGaAs-GaAs-AlGaAs gain-guided arrays operating in the in-phase fundamental array mode Applied Physics Letters. 57: 2764-2766. DOI: 10.1063/1.103780 |
0.421 |
|
| 1990 |
Tang T, Swanson P, Herzinger C, Miller LM, Cockerill TM, Bryan RP, DeTemple TA, Coleman JJ. S‐bend loss in disorder‐delineated GaAs heterostructure laser waveguides with native and blue shifted active regions Applied Physics Letters. 57: 741-743. DOI: 10.1063/1.103431 |
0.509 |
|
| 1990 |
York PK, Langsjoen SM, Miller LM, Beernink KJ, Alwan JJ, Coleman JJ. Effect of confining layer aluminum composition on AlGaAs‐GaAs‐InGaAs strained‐layer quantum well heterostructure lasers Applied Physics Letters. 57: 843-845. DOI: 10.1063/1.103408 |
0.493 |
|
| 1990 |
Rideout W, Yu B, LaCourse J, York PK, Beernink KJ, Coleman JJ. Measurement of the carrier dependence of differential gain, refractive index, and linewidth enhancement factor in strained-layer quantum well lasers Applied Physics Letters. 56: 706-708. DOI: 10.1063/1.102688 |
0.486 |
|
| 1990 |
Favaro ME, Alwan JJ, Bryan RP, Miller LM, Coleman JJ, Kim J, Wayman CM. Strained layer AlGaAs-GaAs-InGaAs real-space transferred electron devices Electronics Letters. 26: 1264-1265. DOI: 10.1049/El:19900814 |
0.31 |
|
| 1989 |
Waters RG, Harding CM, Soltz BA, York PK, Baillargeon JN, Coleman JJ, Fischer SE, Fekete D, Ballantyne JM. The influence of in on the performance of (AL) GaAs single quantum well lasers Proceedings of Spie - the International Society For Optical Engineering. 1043: 310-314. DOI: 10.1117/12.976386 |
0.42 |
|
| 1989 |
Tang T, Miller L, Andideh E, Cockerill T, Swanson P, Bryan R, DeTemple T, Adesida I, Coleman J. Loss in heterostructure waveguide bends formed on a patterned substrate Ieee Photonics Technology Letters. 1: 120-122. DOI: 10.1109/68.36008 |
0.304 |
|
| 1989 |
Zmudzinski CA, Givens ME, Bryan RP, Coleman JJ. Optical characteristics of high-power nonplanar periodic laser arrays Ieee Journal of Quantum Electronics. 25: 1539-1546. DOI: 10.1109/3.29290 |
0.455 |
|
| 1989 |
York PK, Eden JG, Coleman JJ, Fernández GE, Beernink KJ. Ultraviolet laser‐assisted metalorganic chemical vapor deposition of GaAs Journal of Applied Physics. 66: 5001-5008. DOI: 10.1063/1.344467 |
0.416 |
|
| 1989 |
Arnold D, Hess K, Higman T, Coleman JJ, Iafrate GJ. Dynamics of heterostructure hot-electron diodes Journal of Applied Physics. 66: 1423-1427. DOI: 10.1063/1.344446 |
0.304 |
|
| 1989 |
Favaro ME, Fernández GE, Higman TK, York PK, Miller LM, Coleman JJ. Strained layer InGaAs channel negative-resistance field-effect transistor Journal of Applied Physics. 65: 378-380. DOI: 10.1063/1.342552 |
0.318 |
|
| 1989 |
Bryan RP, Coleman JJ, Miller LM, Givens ME, Averback RS, Klatt JL. Impurity induced disordered quantum well heterostructure stripe geometry lasers by MeV oxygen implantation Applied Physics Letters. 55: 94-96. DOI: 10.1063/1.102098 |
0.356 |
|
| 1989 |
Beernink KJ, York PK, Coleman JJ, Waters RG, Kim J, Wayman CM. Characterization of InGaAs-GaAs strained-layer lasers with quantum wells near the critical thickness Applied Physics Letters. 55: 2167-2169. DOI: 10.1063/1.102089 |
0.478 |
|
| 1989 |
York PK, Beernink KJ, Kim J, Coleman JJ, Fernández GE, Wayman CM. Ethyldimethylindium for the growth of InGaAs-GaAs strained-layer lasers by metalorganic chemical vapor deposition Applied Physics Letters. 55: 2476-2478. DOI: 10.1063/1.102003 |
0.45 |
|
| 1989 |
Beernink KJ, York PK, Coleman JJ. Dependence of threshold current density on quantum well composition for strained-layer InGaAs-GaAs lasers by metalorganic chemical vapor deposition Applied Physics Letters. 55: 2585-2587. DOI: 10.1063/1.101986 |
0.479 |
|
| 1989 |
Bryan RP, Miller LM, Cockerill TM, Coleman JJ. Nonplanar quantum well heterostructure window laser Applied Physics Letters. 54: 1634-1636. DOI: 10.1063/1.101307 |
0.488 |
|
| 1989 |
Swanson PD, Tang TK, Givens ME, Miller LM, DeTemple TA, Coleman JJ. Electroabsorption in single quantum well GaAs laser structures Applied Physics Letters. 54: 1716-1718. DOI: 10.1063/1.101291 |
0.472 |
|
| 1989 |
York PK, Eden JG, Coleman JJ, Fernández GE, Beernink KJ. Low‐temperature laser photochemical vapor deposition of GaAs Applied Physics Letters. 54: 1866-1868. DOI: 10.1063/1.101262 |
0.432 |
|
| 1989 |
York PK, Beernink KJ, Fernández GE, Coleman JJ. InGaAs-GaAs strained-layer quantum well buried heterostructure lasers (λ>1 μm) by metalorganic chemical vapor deposition Applied Physics Letters. 54: 499-501. DOI: 10.1063/1.100935 |
0.542 |
|
| 1988 |
Tang TK, Swanson PD, Givens ME, Detemple TA, Coleman JJ, White IA. Losses in semiconductor waveguide S bends fabricated by impurity-induced layer disordering. Optics Letters. 13: 1138-1140. PMID 19746150 DOI: 10.1364/Ol.13.001138 |
0.327 |
|
| 1988 |
Swanson PD, Julien F, Emanuel MA, Sloan L, Tang TK, Detemple TA, Coleman JJ. Low-loss semiconductor waveguide bends Optics Letters. 13: 245-247. PMID 19742042 DOI: 10.1364/Ol.13.000245 |
0.338 |
|
| 1988 |
Miller LM, Coleman JJ. Metalorganic chemical vapor deposition Critical Reviews in Solid State and Materials Sciences. 15: 1-26. DOI: 10.1080/10408438808244623 |
0.335 |
|
| 1988 |
Givens ME, Zmudzinski CA, Bryan RP, Coleman JJ. Operational and design considerations for broad area graded barrier quantum well heterostructure lasers grown by metalorganic chemical vapor deposition for high power applications Fiber and Integrated Optics. 7: 343-352. DOI: 10.1080/01468038808221289 |
0.495 |
|
| 1988 |
Higman TK, Miller LM, Favaro ME, Emanuel MA, Hess K, Coleman JJ. Room-temperature switching and negative differential resistance in the heterostructure hot-electron diode Applied Physics Letters. 53: 1623-1625. DOI: 10.1063/1.99931 |
0.335 |
|
| 1988 |
Zmudzinski CA, Givens ME, Bryan RP, Coleman JJ. Nonplanar index‐guided quantum well heterostructure periodic laser array Applied Physics Letters. 53: 350-352. DOI: 10.1063/1.99911 |
0.468 |
|
| 1988 |
Baillargeon JN, York PK, Zmudzinski CA, Fernández GE, Beernink KJ, Coleman JJ. High-power phase-locked InGaAs strained-layer quantum well heterostructure periodic laser array Applied Physics Letters. 53: 457-459. DOI: 10.1063/1.99883 |
0.514 |
|
| 1988 |
Givens ME, Coleman JJ, Zmudzinski CA, Bryan RP, Emanuel MA, Miller LM. The effect of various buffer-layer structures on the material quality and dislocation density of high composition AlxGa1-xAs laser material grown by metalorganic chemical vapor deposition Journal of Applied Physics. 63: 5092-5097. DOI: 10.1063/1.340409 |
0.403 |
|
| 1988 |
Givens ME, Zmudzinski CA, Bryan RP, Coleman JJ. High‐power nonplanar quantum well heterostructure periodic laser arrays Applied Physics Letters. 53: 1159-1161. DOI: 10.1063/1.100044 |
0.541 |
|
| 1988 |
Fernández GE, Bryan RP, York PK, Coleman JJ. Indium transients in the growth of InGaAs by metal-organic chemical vapor deposition Materials Letters. 6: 409-412. DOI: 10.1016/0167-577X(88)90041-9 |
0.357 |
|
| 1988 |
Emanuel MA, Higman TK, Higman JM, Kolodzey JM, Coleman JJ, Hess K. Theoretical and experimental investigations of the heterostructure hot electron diode Solid State Electronics. 31: 589-592. DOI: 10.1016/0038-1101(88)90347-4 |
0.379 |
|
| 1988 |
Kizilyalli IC, Hess K, Higman T, Emanuel M, Coleman JJ. Ensemble Monte Carlo simulation of real space transfer (NERFET/CHINT) devices Solid State Electronics. 31: 355-357. DOI: 10.1016/0038-1101(88)90295-X |
0.309 |
|
| 1988 |
Julien F, Swanson P, Tang T, Deppe DG, Emanuel M, Detemple TA, Coleman JJ, Holonyak N. Guides d’ondes enfouis dans des superréseaux GaAs-AIGaAs créés par interdiffusion induite par des impuretés Annales Des TéLéCommunications. 43: 66-72. DOI: 10.1007/Bf02995072 |
0.463 |
|
| 1987 |
Mawst L, Givens M, Zmudzinski C, Emanuel M, Coleman J. Optimization and characterization of index-guided visible AlGaAs/GaAs graded barrier quantum well laser diodes Ieee Journal of Quantum Electronics. 23: 696-703. DOI: 10.1109/Jqe.1987.1073423 |
0.67 |
|
| 1987 |
Coleman J. Announcing a special issue of the IEEE journal of quantum electronics on quantum well heterostructures and superlattices Ieee Journal of Quantum Electronics. 23: 366-366. DOI: 10.1109/Jqe.1987.1073364 |
0.391 |
|
| 1987 |
Givens ME, Mawst LJ, Zmudzinski CA, Emanuel MA, Coleman JJ. Effect of compositionally graded and superlattice buffer layers on the device performance of graded barrier quantum well heterostructure laser diodes Applied Physics Letters. 50: 301-303. DOI: 10.1063/1.98231 |
0.608 |
|
| 1987 |
Haase MA, Emanuel MA, Smith SC, Coleman JJ, Stillman GE. Band discontinuities in GaAs/AlxGa1−xAs heterojunction photodiodes Applied Physics Letters. 50: 404-406. DOI: 10.1063/1.98213 |
0.563 |
|
| 1987 |
Julien F, Swanson PD, Emanuel MA, Deppe DG, DeTemple TA, Coleman JJ, Holonyak N. Impurity‐induced disorder‐delineated optical waveguides in GaAs‐AlGaAs superlattices Applied Physics Letters. 50: 866-868. DOI: 10.1063/1.98015 |
0.58 |
|
| 1987 |
Leopold MM, Specht AP, Zmudzinski CA, Givens ME, Coleman JJ. Temperature-dependent factors contributing to T0 in graded-index separate-confinement-heterostructure single quantum well lasers Applied Physics Letters. 50: 1403-1405. DOI: 10.1063/1.97834 |
0.363 |
|
| 1986 |
Mawst L, Givens M, Emanuel M, Zmudzinski C, Coleman J. VA-3 Index-guided complementary self-aligned laser arrays by MOCVD Ieee Transactions On Electron Devices. 33: 1857-1857. DOI: 10.1109/T-Ed.1986.22809 |
0.616 |
|
| 1986 |
Zory PS, Reisinger AR, Waters RG, Mawst LJ, Zmudzinski CA, Emanuel MA, Givens ME, Coleman JJ. Anomalous temperature dependence of threshold for thin quantum well AlGaAs diode lasers Applied Physics Letters. 49: 16-18. DOI: 10.1063/1.97086 |
0.634 |
|
| 1986 |
Mawst LJ, Givens ME, Emanuel MA, Zmudzinski CA, Coleman JJ. Phase‐locked shallow mesa graded barrier quantum well laser arrays Applied Physics Letters. 48: 1337-1339. DOI: 10.1063/1.96953 |
0.644 |
|
| 1986 |
Zmudzinski CA, Mawst LJ, Givens ME, Emanuel MA, Coleman JJ. Phase locked narrow zinc diffused stripe laser arrays Applied Physics Letters. 48: 1424-1426. DOI: 10.1063/1.96928 |
0.606 |
|
| 1986 |
Meehan K, Hsieh KC, Costrini G, Kaliski RW, Holonyak N, Coleman JJ. Stacking and layer disordering of AlxGa1−xAs‐GaAs quantum well heterostructures Applied Physics Letters. 48: 861-863. DOI: 10.1063/1.96692 |
0.425 |
|
| 1986 |
Mawst LJ, Givens ME, Emanuel MA, Zmudzinski CA, Coleman JJ. Complementary self‐aligned laser arrays by metalorganic chemical vapor deposition Journal of Applied Physics. 60: 2633-2635. DOI: 10.1063/1.337138 |
0.625 |
|
| 1986 |
Mawst LJ, Givens ME, Zmudzinski CA, Emanuel MA, Coleman JJ. Near‐ and far‐field observations of transient behavior in pulsed graded barrier quantum well lasers Journal of Applied Physics. 60: 2613-2615. DOI: 10.1063/1.337130 |
0.613 |
|
| 1986 |
Coleman JJ, Costrini G, Jeng SJ, Wayman CM. III-V heterostructure interfaces by metalorganic chemical vapor deposition Journal of Applied Physics. 59: 428-431. DOI: 10.1063/1.336648 |
0.35 |
|
| 1986 |
Zory P, Reisinger A, Mawst L, Costrini G, Zmudzinski C, Emanuel M, Givens M, Coleman J. Anomalous length dependence of threshold for thin quantum well AlGaAs diode lasers Electronics Letters. 22: 475. DOI: 10.1049/El:19860323 |
0.639 |
|
| 1986 |
Costrini G, Emanuel MA, Givens ME, Coleman JJ, Jeng SJ, Wayman CM. The growth of ultra-thin layer superlattices by metalorganic chemical vapor deposition Superlattices and Microstructures. 2: 27-31. DOI: 10.1016/0749-6036(86)90149-7 |
0.337 |
|
| 1985 |
Widiger DJ, Kizilyalli IC, Hess K, Coleman JJ. Two-dimensional transient simulation of an idealized high electron mobility transistor Ieee Transactions On Electron Devices. 32: 1092-1102. DOI: 10.1109/T-Ed.1985.22080 |
0.374 |
|
| 1985 |
Coleman JJ, Tsang WT. Semiconductor lasers: A choice structure for lightwave communications Ieee Potentials. 4: 16-21. DOI: 10.1109/Mp.1985.6499880 |
0.427 |
|
| 1985 |
Gavrilovic P, Deppe DG, Meehan K, Holonyak N, Coleman JJ, Burnham RD. Implantation disordering of AlxGa1−xAs superlattices Applied Physics Letters. 47: 130-132. DOI: 10.1063/1.96238 |
0.496 |
|
| 1985 |
Costrini G, Coleman JJ. Conditions for uniform growth of GaAs by metalorganic chemical vapor deposition in a vertical reactor Journal of Applied Physics. 57: 2249-2252. DOI: 10.1063/1.334370 |
0.32 |
|
| 1985 |
Mawst L, Costrini G, Zmudzinski C, Givens M, Emanuel M, Coleman J. Complementary self-aligned laser by metalorganic chemical vapour deposition Electronics Letters. 21: 903. DOI: 10.1049/El:19850637 |
0.612 |
|
| 1985 |
Widiger D, Kizilyalli IC, Hess K, Coleman JJ. Two-dimensional numerical analysis of the high electron mobility transistor Superlattices and Microstructures. 1: 465-470. DOI: 10.1016/S0749-6036(85)80016-1 |
0.351 |
|
| 1985 |
Jeng SJ, Wayman CM, Costrini G, Coleman JJ. Structural and compositional analyses of GaAs1-xPx GaAs heterostructures grown by MOCVD Materials Letters. 3: 331-335. DOI: 10.1016/0167-577X(85)90070-9 |
0.333 |
|
| 1985 |
Jeng SJ, Wayman CM, Coleman JJ, Costrini G. Interface characteristics of GaAs AlxGa1-x As superlattices grown by MOCVD Materials Letters. 3: 89-92. DOI: 10.1016/0167-577X(85)90005-9 |
0.339 |
|
| 1985 |
Jeng SJ, Wayman CM, Costrini G, Givens ME, Emanuel MA, Coleman JJ. Growth mechanisms of GaAsP/GaAs heterostructures by metalorganic chemical vapour deposition Journal of Crystal Growth. 73: 425-430. DOI: 10.1016/0022-0248(85)90004-1 |
0.308 |
|
| 1984 |
Widiger D, Hess K, Coleman JJ. Two-Dimensional Numerical Analysis of the High Electron Mobility Transistor Ieee Electron Device Letters. 5: 266-269. DOI: 10.1109/Edl.1984.25913 |
0.334 |
|
| 1984 |
Kirillov D, Merz JL, Dapkus PD, Coleman JJ. Laser beam heating and transformation of a GaAs-AlAs multiple-quantum-well structure Journal of Applied Physics. 55: 1105-1109. DOI: 10.1063/1.333200 |
0.6 |
|
| 1984 |
Jeng SJ, Wayman CM, Costrini G, Coleman JJ. Interface structure of GaAs/AlAs semiconductor superlattices prepared by MOCVD Materials Letters. 2: 359-361. DOI: 10.1016/0167-577X(84)90111-3 |
0.311 |
|
| 1983 |
Camras MD, Holonyak N, Coleman JJ, Drickamer HG, Burnham RD, Streifer W, Scifres DR, Lindström C, Paoli TP. High pressure measurements on photopumped low threshold Al xGa1-xAs quantum well lasers Journal of Applied Physics. 54: 4386-4389. DOI: 10.1063/1.332677 |
0.474 |
|
| 1983 |
Martin PA, Meehan K, Gavrilovic P, Hess K, Holonyak N, Coleman JJ. Transient capacitance spectroscopy on large quantum well heterostructures Journal of Applied Physics. 54: 4689-4691. DOI: 10.1063/1.332633 |
0.391 |
|
| 1983 |
Hsieh TC, Hess K, Coleman JJ, Dapkus PD. Carrier density distribution in modulation doped GaAs-AlxGa1-xAs quantum well heterostructures Solid State Electronics. 26: 1173-1176. DOI: 10.1016/0038-1101(83)90145-4 |
0.595 |
|
| 1982 |
Kim ME, Hong CS, Kasemset D, Coleman JJ, Bernescut R, Patel NB, Dapkus PD. IIIA-6 GaAlAs/GaAs MOCVD selective epitaxy for monolithic optical device integration with comples GaAs IC's Ieee Transactions On Electron Devices. 29: 1674-1675. DOI: 10.1109/T-Ed.1982.20958 |
0.34 |
|
| 1982 |
Kirchoefer SW, Holonyak N, Hess K, Gulino DA, Drickamer HG, Coleman JJ, Dapkus PD. Absorption measurements at high pressure on AlAs-AlxGa 1-xAs-GaAs superlattices Applied Physics Letters. 40: 821-824. DOI: 10.1063/1.93273 |
0.489 |
|
| 1982 |
Hong CS, Coleman JJ, Dapkus PD, Liu YZ. High-efficiency, low-threshold, Zn-diffused narrow stripe GaAs/GaAlAs double heterostructure lasers grown by metalorganic chemical vapor deposition Applied Physics Letters. 40: 208-210. DOI: 10.1063/1.93042 |
0.662 |
|
| 1982 |
Coleman JJ, Dapkus PD, Kirkpatrick CG, Camras MD, Holonyak N. Disorder of an AlAs‐GaAs superlattice by silicon implantation Applied Physics Letters. 40: 904-906. DOI: 10.1063/1.92942 |
0.488 |
|
| 1982 |
Tang JY, Hess K, Holonyak N, Coleman JJ, Dapkus PD. The dynamics of electron‐hole collection in quantum well heterostructures Journal of Applied Physics. 53: 6043-6046. DOI: 10.1063/1.331554 |
0.548 |
|
| 1982 |
Kirchoefer SW, Holonyak N, Hess K, Meehan K, Gulino DA, Drickamer HG, Coleman JJ, Dapkus PD. High pressure measurements on AlxGa1-xAs-GaAs (x = 0.5 and 1) superlattices and quantum well heterostructure lasers Journal of Applied Physics. 53: 6037-6042. DOI: 10.1063/1.331553 |
0.564 |
|
| 1982 |
Kirchoefer SW, Holonyak N, Coleman JJ, Dapkus PD. Zn diffusion and disordering of an AlAs-GaAs superlattice along its layers Journal of Applied Physics. 53: 766-768. DOI: 10.1063/1.329985 |
0.51 |
|
| 1982 |
Kirchoefer SW, Holonyak N, Hess K, Gulino DA, Drickamer HG, Coleman JJ, Dapkus PD. High pressure experiments on AlxGa1-xAs-GaAs quantum-well heterostructure lasers Solid State Communications. 42: 633-636. DOI: 10.1016/0038-1098(82)90807-9 |
0.594 |
|
| 1982 |
Laidig WD, Holonyak N, Coleman JJ, Dapkus FD. Induced disorder of AlAs-AlGaAs-GaAs quantum-well heterostructures Journal of Electronic Materials. 11: 1-20. DOI: 10.1007/Bf02654605 |
0.403 |
|
| 1981 |
Holonyak N, Laidig WD, Camras MD, Coleman JJ, Dapkus PD. IIIA-8 IR-Red GaAs-AlAs Superlattice Laser Monolithically Integrated in a Yellow-Gap Cavity Ieee Transactions On Electron Devices. 28: 1224-1225. DOI: 10.1109/T-Ed.1981.20540 |
0.458 |
|
| 1981 |
Anderson E, Vojak B, Holonyak N, Stillman G, Coleman J, Dapkus P. Transient and noise characteristics of quantum-well heterostructure lasers Ieee Journal of Quantum Electronics. 17: 2520-2520. DOI: 10.1109/Jqe.1981.1071034 |
0.655 |
|
| 1981 |
Chin R, Nakano K, Coleman JJ, Dapkus PD. Gunn Oscillation in GaAs Optically Triggered by 1.06 µm Radiation Ieee Electron Device Letters. 2: 248-249. DOI: 10.1109/Edl.1981.25420 |
0.538 |
|
| 1981 |
Hong CS, Liu YZ, Dapkus PD, Coleman JJ. Controlled Zn Diffusion for Low Threshold Narrow Stripe GaAlAs/GaAs DH Lasers Ieee Electron Device Letters. 2: 225-227. DOI: 10.1109/Edl.1981.25412 |
0.599 |
|
| 1981 |
Holonyak N, Laidig WD, Hess K, Coleman JJ, Dapkus PD. Holonyak et al. Respond Physical Review Letters. 46: 1043. DOI: 10.1103/Physrevlett.46.1043 |
0.448 |
|
| 1981 |
Coleman JJ, Dapkus PD, Clarke DR, Camras MD, Holonyak N. Absorption and stimulated emission in an AlAs-GaAs superlattice Applied Physics Letters. 39: 864-866. DOI: 10.1063/1.92613 |
0.393 |
|
| 1981 |
Holonyak N, Laidig WD, Camras MD, Coleman JJ, Dapkus PD. IR-red GaAs-AlAs superlattice laser monolithically integrated in a yellow-gap cavity Applied Physics Letters. 39: 102-104. DOI: 10.1063/1.92536 |
0.63 |
|
| 1981 |
Anderson ER, Vojak BA, Holonyak N, Stillman GE, Coleman JJ, Dapkus PD. Transient and noise characteristics of quantum‐well heterostructure lasers Applied Physics Letters. 38: 585-587. DOI: 10.1063/1.92463 |
0.724 |
|
| 1981 |
Dapkus PD, Coleman JJ, Laidig WD, Holonyak N, Vojak BA, Hess K. Continuous room-temperature photopumped laser operation of modulation-doped AlxGa1-xAs/GaAs superlattices Applied Physics Letters. 38: 118-120. DOI: 10.1063/1.92295 |
0.649 |
|
| 1981 |
Coleman JJ, Dapkus PD, Laidig WD, Vojak BA, Holonyak N. High-barrier cluster-free AlxGa1-xAs-AlAs-GaAs quantum-well heterostructure laser Applied Physics Letters. 38: 63-65. DOI: 10.1063/1.92261 |
0.414 |
|
| 1981 |
Coleman JJ, Dapkus PD, Holonyak N, Laidig WD. Device-quality epitaxial AlAs by metalorganic-chemical vapor deposition Applied Physics Letters. 38: 894-896. DOI: 10.1063/1.92219 |
0.616 |
|
| 1981 |
Laidig WD, Holonyak N, Camras MD, Hess K, Coleman JJ, Dapkus PD, Bardeen J. Disorder of an AlAs-GaAs superlattice by impurity diffusion Applied Physics Letters. 38: 776-778. DOI: 10.1063/1.92159 |
0.516 |
|
| 1981 |
Vojak BA, Laidig WD, Holonyak N, Camras MD, Coleman JJ, Dapkus PD. HIGH-ENERGY (VISIBLE-RED) STIMULATED EMISSION IN GaAs. Journal of Applied Physics. 52: 621-626. DOI: 10.1063/1.328832 |
0.628 |
|
| 1981 |
Vojak BA, Holonyak N, Laidig WD, Hess K, Coleman JJ, Dapkus PD. PHONON CONTRIBUTION TO METALORGANIC CHEMICAL VAPOR DEPOSITED Al//x Ga//1// minus //xAs-GaAs QUANTUM-WELL HETEROSTRUCTURE LASER OPERATION. Journal of Applied Physics. 52: 959-968. DOI: 10.1063/1.328786 |
0.673 |
|
| 1981 |
Coleman JJ, Dapkus PD, Camras MD, Holonyak N, Laidig WD, Low TS, Burroughs MS, Hess K. ABSORPTION, STIMULATED EMISSION, AND CLUSTERING IN AlAs-Al//xGa//1// minus //xAs-GaAs SUPERLATTICES. Journal of Applied Physics. 52: 7291-7295. DOI: 10.1063/1.328717 |
0.581 |
|
| 1981 |
Holonyak N, Laidig WD, Camras MD, Hess K, Burroughs MS, Coleman JJ, Dapkus PD. SIZE FLUCTUATIONS AND HIGH-ENERGY LASER OPERATION OF Al//xGa//1// minus //xAs-AlAs-GaAs QUANTUM-WELL HETEROSTRUCTURES. Journal of Applied Physics. 52: 6777-6782. DOI: 10.1063/1.328631 |
0.619 |
|
| 1981 |
Coleman JJ, Dapkus PD, Yang JJJ. Single-interface enhanced mobility structures by metalorganic chemical vapour deposition Electronics Letters. 17: 606-608. DOI: 10.1049/El:19810426 |
0.312 |
|
| 1981 |
Laidig WD, Holonyak N, Camras MD, Vojak BA, Hess K, Coleman JJ, Dapkus PD. Quenching of stimulated phonon emission in AlxGa1-xAs-GaAs quantum-well heterostructures Solid State Communications. 38: 301-304. DOI: 10.1016/0038-1098(81)90466-X |
0.618 |
|
| 1981 |
Coleman JJ, Dapkus PD, Thompson DE, Clarke DR. The growth and characterization of metalorganic chemical vapor deposition (MO-CVD) quantum well transport structures Journal of Crystal Growth. 55: 207-212. DOI: 10.1016/0022-0248(81)90289-X |
0.583 |
|
| 1981 |
Coleman JJ, Dapkus PD, Yang JJJ. SINGLE-INTERFACE ENHANCED MOBILITY STRUCTURES BY METALORGANIC CHEMICAL VAPOUR DEPOSITION Electronics Letters. 17: 606-608. |
0.477 |
|
| 1980 |
Holonyak N, Hess K, Coleman JJ, Vojak BA, Dapkus PD, Laidig WD. MP-B8 Phonon Contribution to Quantum-Well and to Double-Heterostructure Laser Operation Ieee Transactions On Electron Devices. 27: 2182. DOI: 10.1109/T-Ed.1980.20191 |
0.459 |
|
| 1980 |
Coleman JJ, Dapkus PD. MP-B2 single longitudinal mode MOCVD GaAlAs-GaAs self-aligned structure lasers Ieee Transactions On Electron Devices. 27: 2180-2180. DOI: 10.1109/T-Ed.1980.20185 |
0.404 |
|
| 1980 |
Holonyak N, Laidig WD, Vojak BA, Hess K, Coleman JJ, Dapkus PD, Bardeen J. Alloy clustering in AlxGa1-xAs-GaAs quantum-well heterostructures Physical Review Letters. 45: 1703-1706. DOI: 10.1103/Physrevlett.45.1703 |
0.693 |
|
| 1980 |
Coleman JJ, Dapkus PD. Single-longitudinal-mode metalorganic chemical-vapor-deposition self-aligned GaAlAs-GaAs double-heterostructure lasers Applied Physics Letters. 37: 262-263. DOI: 10.1063/1.91900 |
0.625 |
|
| 1980 |
Holonyak N, Vojak BA, Laidig WD, Hess K, Coleman JJ, Dapkus PD. Phonon contribution to double-heterojunction laser operation Applied Physics Letters. 37: 136-138. DOI: 10.1063/1.91792 |
0.619 |
|
| 1980 |
Coleman JJ, Dapkus PD, Vojak BA, Laidig WD, Holonyak N, Hess K. Induced phonon-sideband laser operation of large-quantum-well Al xGa1-xAs-GaAs heterostructures (Lz ∼200-500 Å) Applied Physics Letters. 37: 15-17. DOI: 10.1063/1.91683 |
0.658 |
|
| 1980 |
Hess K, Holonyak N, Laidig WD, Vojak BA, Coleman JJ, Dapkus PD. Hot electrons and phonons in quantum-well AlxGa1-xAs-GaAs heterostructures Solid State Communications. 34: 749-752. DOI: 10.1016/0038-1098(80)90906-0 |
0.61 |
|
| 1980 |
Vojak BA, Holonyak N, Laidig WD, Hess K, Coleman JJ, Kapkus PD. EXCITON IN RECOMBINATION IN Al//xGa//1// minus //xAs-GaAs QUANTUM-WELL HETEROSTRUCTURES. Solid State Communications. 35: 477-481. DOI: 10.1016/0038-1098(80)90252-5 |
0.46 |
|
| 1978 |
Chang RPH, Coleman JJ. A new method of fabricating gallium arsenide MOS devices Applied Physics Letters. 32: 332-333. DOI: 10.1063/1.90040 |
0.301 |
|
| 1978 |
Coleman JJ, Nash FR. Zinc contamination and misplaced p-n junctions in InP-GaInPAs D.H. lasers Electronics Letters. 14: 558-559. DOI: 10.1049/El:19780378 |
0.374 |
|
| 1977 |
Coleman JJ. Controlled barrier height InP Schottky diodes prepared by sulfur diffusion Applied Physics Letters. 31: 283-285. DOI: 10.1063/1.89663 |
0.321 |
|
| 1977 |
Holonyak N, Nelson RJ, Coleman JJ, Wright PD, Finn D, Groves WO, Keune DL. Observation of the upper branch (N′Γ) of the nitrogen isoelectronic trap in GaAs1−yPy Journal of Applied Physics. 48: 1963-1968. DOI: 10.1063/1.323902 |
0.331 |
|
| 1977 |
Holonyak N, Chin R, Coleman JJ, Keune DL, Groves WO. Limitations of the direct‐indirect transition on In1−xGaxP1−zAsz heterojunctions Journal of Applied Physics. 48: 635-638. DOI: 10.1063/1.323700 |
0.396 |
|
| 1976 |
Wright PD, Coleman JJ, Holonyak N, Ludowise MJ, Stillman GE. I-3 observations of inhomogeneous or homogeneous line broadening in In 1-x Ga x P 1-z As z double heterojunctions operated in external grating cavities Ieee Transactions On Electron Devices. 23: 1247-1248. DOI: 10.1109/T-Ed.1976.18588 |
0.548 |
|
| 1976 |
Coleman JJ, Holonyak N, Ludowise MJ, Wright PD, Groves WO, Keune DL. I-2 pulsed room temperature operation of In 1-x -Ga x P 1-z As z double heterojunction lasers at high energy (6470 A, 1.916 eV) Ieee Transactions On Electron Devices. 23: 1247-1247. DOI: 10.1109/T-Ed.1976.18586 |
0.334 |
|
| 1976 |
Nelson RJ, Holonyak N, Coleman JJ, Lazarus D, Keune DL, Herzog AH, Groves WO, Kleiman GG. Pressure study of the external quantum efficiency of N‐doped GaAs1−xPx light‐emitting diodes Applied Physics Letters. 29: 615-617. DOI: 10.1063/1.89163 |
0.322 |
|
| 1976 |
Coleman JJ, Holonyak N, Ludowise MJ, Wright PD, Chin R, Groves WO, Keune DL. Pulsed room‐temperature operation of In1−xGaxP1−zAsz double heterojunction lasers at high energy (6470 Å, 1.916 eV) Applied Physics Letters. 29: 167-169. DOI: 10.1063/1.89010 |
0.454 |
|
| 1976 |
Wright PD, Coleman JJ, Holonyak N, Ludowise MJ, Stillman GE. Homogeneous or inhomogeneous line broadening in a semiconductor laser: Observations on In1−xGaxP1−zAsz double heterojunctions in an external grating cavity Applied Physics Letters. 29: 18-20. DOI: 10.1063/1.88878 |
0.62 |
|
| 1976 |
Coleman JJ, Holonyak N, Ludowise MJ. Melt removal and planar growth of In1-xGaxP 1-zAsz heterojunctions Applied Physics Letters. 28: 363-365. DOI: 10.1063/1.88781 |
0.305 |
|
| 1976 |
Wright PD, Coleman JJ, Holonyak N, Ludowise MJ, Stillman GE, Rossi JA. In1−xGaxP1−zAsz double‐heterojunction‐laser operation (77 °K, yellow) in an external grating cavity Journal of Applied Physics. 47: 3580-3586. DOI: 10.1063/1.323160 |
0.649 |
|
| 1976 |
Coleman JJ, Holonyak N, Ludowise MJ, Wright PD. Yellow In1−xGaxP1−zAsz double‐heterojunction lasers Journal of Applied Physics. 47: 2015-2019. DOI: 10.1063/1.322928 |
0.304 |
|
| 1975 |
Coleman J, Holonyak N, Lubowise M, Wright P, Groves W, Keune D. Liquid phase epitaxial In 1-x Ga x P 1-z As z /GaAs 1-y P y heterojunction lasers Ieee Journal of Quantum Electronics. 11: 471-476. DOI: 10.1109/Jqe.1975.1068650 |
0.352 |
|
| 1975 |
Hitchens WR, Holonyak N, Wright PD, Coleman JJ. Low‐threshold LPE In1−x′Gax′P1−z′ Asz′/In1−xGaxP1−zAsz/In1− x′ Gax′P1−z′Asz′ yellow double‐heterojunction laser diodes (J<104 A/cm2, λ∼5850 Å, 77 °K) Applied Physics Letters. 27: 245-247. DOI: 10.1063/1.88410 |
0.425 |
|
| 1975 |
Coleman JJ, Holonyak N, Ludowise MJ, Wright PD, Groves WO, Keune DL, Craford MG. Heterojunction laser operation of N‐free and N‐doped GaAs1−yPy (y=0.42–0.43, λ∼6200 Å, 77 °K) near the direct‐indirect transition (y∼yc?0.46) Journal of Applied Physics. 46: 3556-3561. DOI: 10.1063/1.322039 |
0.407 |
|
| 1975 |
Coleman JJ, Holonyak N, Ludowise MJ, Nelson RJ, Wright PD, Groves WO, Keune DL, Craford MG. Heterojunction laser operation of GaAs1−xPx : N on NN‐pair (ENN) and A‐line (EN) transitions near the direct (Γ) band edge Journal of Applied Physics. 46: 4835-4841. DOI: 10.1063/1.321513 |
0.41 |
|
| 1974 |
Hitchens WR, Holonyak N, Lee MH, Campbell JC, Coleman JJ, Groves WO, Keune DL. IIIA-1 liquid phase epitaxial (LPE) grown junction In 1-x Ga x P (x ∼ 0.63) laser of wavelength λ ∼ 5900 Å (2.10 eV, 77 K) Ieee Transactions On Electron Devices. 21: 738-738. DOI: 10.1109/T-Ed.1974.18014 |
0.312 |
|
| 1974 |
Hitchens WR, Holonyak N, Lee MH, Campbell JC, Coleman JJ, Groves WO, Keune DL. Liquid phase epitaxial (LPE) grown junction In1-xGaxP (x∼0.63) laser of wavelength λ∼5900 Å (2.10 eV, 77°K) Applied Physics Letters. 25: 352-354. DOI: 10.1063/1.1655505 |
0.441 |
|
| 1974 |
Coleman JJ, Hitchens WR, Holonyak N, Ludowise MJ, Groves WO, Keune DL. Liquid phase epitaxial In1-x Gax P1-z Asz/GaAs1-y Py quaternary (LPE)-ternary (VPE) heterojunction lasers (x ∼0.70, z ∼0.01, y ∼0.40; λ < 6300 Å, 77°K) Applied Physics Letters. 25: 725-727. DOI: 10.1063/1.1655377 |
0.424 |
|
| 1974 |
Campbell JC, Hitchens WR, Holonyak N, Lee MH, Ludowise MJ, Coleman JJ. Luminescence, laser, and carrier‐lifetime behavior of constant‐temperature LPE In1−x Gax P (x=0.52) grown on (100) GaAs Applied Physics Letters. 24: 327-330. DOI: 10.1063/1.1655203 |
0.463 |
|
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