Year |
Citation |
Score |
2020 |
Liu X, Sammarco C, Zeng G, Guo D, Tang W, Tan C. Investigations of monoclinic- and orthorhombic-based (BxGa1−x)2O3 alloys Applied Physics Letters. 117: 12104. DOI: 10.1063/5.0005808 |
0.651 |
|
2020 |
Borovac D, Sun W, Tan C, Tansu N. Electronic properties of dilute-As InGaNAs alloys: A first-principles study Journal of Applied Physics. 127: 015103. DOI: 10.1063/1.5119371 |
0.631 |
|
2019 |
Goodrich JC, Borovac D, Tan CK, Tansu N. Band Anti-Crossing Model in Dilute-As GaNAs Alloys. Scientific Reports. 9: 5128. PMID 30914672 DOI: 10.1038/S41598-019-41286-Y |
0.621 |
|
2019 |
Liu X, Tan C. Structural and electronic properties of dilute-selenide gallium oxide Aip Advances. 9: 125204. DOI: 10.1063/1.5128675 |
0.415 |
|
2019 |
Liu X, Tan C. Electronic properties of monoclinic (InxGa1-x)2O3 alloys by first-principle Aip Advances. 9: 035318. DOI: 10.1063/1.5093195 |
0.381 |
|
2018 |
Zeng G, Yang X, Tan CK, Marvel CJ, Koel BE, Tansu N, Krick BA. Shear-Induced Changes of Electronic Properties in Gallium Nitride. Acs Applied Materials & Interfaces. PMID 29954172 DOI: 10.1021/Acsami.8B02271 |
0.68 |
|
2018 |
Borovac D, Tan CK, Tansu N. First-Principle Study of the Optical Properties of Dilute-P GaNP Alloys. Scientific Reports. 8: 6025. PMID 29662131 DOI: 10.1038/S41598-018-24384-1 |
0.601 |
|
2018 |
Sun W, Tan CK, Wierer JJ, Tansu N. Ultra-Broadband Optical Gain in III-Nitride Digital Alloys. Scientific Reports. 8: 3109. PMID 29449620 DOI: 10.1038/S41598-018-21434-6 |
0.603 |
|
2018 |
Borovac D, Tan C, Tansu N. First-principle electronic properties of dilute-P AlNP deep ultraviolet semiconductor Aip Advances. 8: 085119. DOI: 10.1063/1.5036978 |
0.625 |
|
2017 |
Borovac D, Tan CK, Tansu N. Investigations of the Optical Properties of GaNAs Alloys by First-Principle. Scientific Reports. 7: 17285. PMID 29229949 DOI: 10.1038/S41598-017-17504-W |
0.618 |
|
2017 |
Fragkos IE, Tan CK, Dierolf V, Fujiwara Y, Tansu N. Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes. Scientific Reports. 7: 14648. PMID 29116197 DOI: 10.1038/S41598-017-15302-Y |
0.741 |
|
2017 |
Sun W, Tan CK, Tansu N. AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics. Scientific Reports. 7: 11826. PMID 28928372 DOI: 10.1038/S41598-017-12125-9 |
0.696 |
|
2017 |
Sun W, Tan CK, Tansu N. III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures. Scientific Reports. 7: 6671. PMID 28751673 DOI: 10.1038/S41598-017-06889-3 |
0.65 |
|
2017 |
Tan C, Sun W, Wierer JJ, Tansu N. Effect of interface roughness on Auger recombination in semiconductor quantum wells Aip Advances. 7: 035212. DOI: 10.1063/1.4978777 |
0.608 |
|
2016 |
Tan CK, Borovac D, Sun W, Tansu N. First-Principle Electronic Properties of Dilute-P GaN1-xPx Alloy for Visible Light Emitters. Scientific Reports. 6: 24412. PMID 27076266 DOI: 10.1038/Srep24412 |
0.659 |
|
2016 |
Tan CK, Sun W, Borovac D, Tansu N. Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters. Scientific Reports. 6: 22983. PMID 26961170 DOI: 10.1038/Srep22983 |
0.645 |
|
2016 |
Tan CK, Borovac D, Sun W, Tansu N. Dilute-As AlNAs Alloy for Deep-Ultraviolet Emitter. Scientific Reports. 6: 22215. PMID 26905060 DOI: 10.1038/Srep22215 |
0.671 |
|
2016 |
Tan CK, Borovac D, Sun W, Tansu N. InGaN/Dilute-As GaNAs Interface Quantum Well for Red Emitters. Scientific Reports. 6: 19271. PMID 26758552 DOI: 10.1038/Srep19271 |
0.62 |
|
2016 |
Zeng G, Tan CK, Tansu N, Krick BA. Ultralow wear of gallium nitride Applied Physics Letters. 109. DOI: 10.1063/1.4960375 |
0.67 |
|
2016 |
Zhu P, Zhu H, Qin W, Dantas BH, Sun W, Tan CK, Tansu N. Narrow-linewidth red-emission Eu3+-doped TiO2 spheres for light-emitting diodes Journal of Applied Physics. 119. DOI: 10.1063/1.4944944 |
0.725 |
|
2015 |
Zhu P, Tan CK, Sun W, Tansu N. Aspect ratio engineering of microlens arrays in thin-film flip-chip light-emitting diodes. Applied Optics. 54: 10299-303. PMID 26836692 DOI: 10.1364/Ao.54.010299 |
0.7 |
|
2015 |
Tan CK, Tansu N. Nanostructured lasers: Electrons and holes get closer. Nature Nanotechnology. 10: 107-9. PMID 25599192 DOI: 10.1038/Nnano.2014.333 |
0.573 |
|
2015 |
Tansu N, Tan CK, Wierer JJ. Tutorial on III-Nitride solid state lighting and smart lighting 2015 Ieee Photonics Conference, Ipc 2015. 26-27. DOI: 10.1109/IPCon.2015.7323753 |
0.534 |
|
2015 |
Sun W, Tan CK, Tansu N. Artificially-engineered InGaN-based digital alloy for optoelectronics 2015 Ieee Photonics Conference, Ipc 2015. 519-520. DOI: 10.1109/IPCon.2015.7323675 |
0.558 |
|
2015 |
Tan CK, Tansu N. Dilute-As AlNAs semiconductor for ultraviolet emitters 2015 Ieee Photonics Conference, Ipc 2015. 521-522. DOI: 10.1109/IPCon.2015.7323584 |
0.619 |
|
2015 |
Tan CK, Tansu N. Gain and spontaneous emission characteristics of AlInN quantum well for deep ultraviolet emitters 2015 Ieee Photonics Conference, Ipc 2015. 577-578. DOI: 10.1109/IPCon.2015.7323494 |
0.568 |
|
2015 |
Tan CK, Tansu N. Auger recombination rates in dilute-As GaNAs semiconductor Aip Advances. 5. DOI: 10.1063/1.4921394 |
0.599 |
|
2015 |
Tan CK, Tansu N. First-principle natural band alignment of GaN / dilute-As GaNAs alloy Aip Advances. 5. DOI: 10.1063/1.4906569 |
0.65 |
|
2013 |
Tan CK, Zhang J, Li XH, Liu G, Tayo BO, Tansu N. First-principle electronic properties of dilute-as GaNAs alloy for visible light emitters Ieee/Osa Journal of Display Technology. 9: 272-279. DOI: 10.1109/Jdt.2013.2248342 |
0.757 |
|
2012 |
Tan CK, Zhang J, Li XH, Liu G, Tansu N. Dilute-As GaNAs semiconductor for visible emitters 2012 Ieee Photonics Conference, Ipc 2012. 695-696. DOI: 10.1109/IPCon.2012.6358812 |
0.633 |
|
2012 |
Liu G, Zhang J, Tan CK, Tansu N. Characteristics of InGaN quantum wells light-emitting diodes with thin AlGaInN barrier layers 2012 Ieee Photonics Conference, Ipc 2012. 431-432. DOI: 10.1109/IPCon.2012.6358677 |
0.558 |
|
2012 |
Tansu N, Zhang J, Liu G, Zhao H, Tan CK, Zhu P. Physics of high-Efficiency III-Nitride quantum wells light-Emitting diodes Asia Communications and Photonics Conference, Acp 2012. |
0.745 |
|
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