| Year |
Citation |
Score |
| 2020 |
Lee IH, He M, Zhang X, Luo Y, Liu S, Edgar JH, Wang K, Avouris P, Low T, Caldwell JD, Oh SH. Image polaritons in boron nitride for extreme polariton confinement with low losses. Nature Communications. 11: 3649. PMID 32686672 DOI: 10.1038/S41467-020-17424-W |
0.301 |
|
| 2019 |
Lee IH, Yoo D, Avouris P, Low T, Oh SH. Graphene acoustic plasmon resonator for ultrasensitive infrared spectroscopy. Nature Nanotechnology. PMID 30742134 DOI: 10.1038/S41565-019-0363-8 |
0.336 |
|
| 2019 |
Lang ND, Avouris P. Carbon-atom wires: charge-transfer doping, voltage drop, and the effect of distortions Physical Review Letters. 84: 358-61. PMID 11015910 DOI: 10.1103/Physrevlett.84.358 |
0.348 |
|
| 2019 |
Lyo I, Kaxiras E, Avouris P. Adsorption of boron on Si(111): Its effect on surface electronic states and reconstruction. Physical Review Letters. 63: 1261-1264. PMID 10040517 DOI: 10.1103/Physrevlett.63.1261 |
0.314 |
|
| 2018 |
Ho PH, Farmer DB, Tulevski GS, Han SJ, Bishop DM, Gignac LM, Bucchignano J, Avouris P, Falk AL. Intrinsically ultrastrong plasmon-exciton interactions in crystallized films of carbon nanotubes. Proceedings of the National Academy of Sciences of the United States of America. PMID 30459274 DOI: 10.1073/Pnas.1816251115 |
0.342 |
|
| 2018 |
Engel M, Farmer DB, Azpiroz JT, Seo JT, Kang J, Avouris P, Hersam MC, Krupke R, Steiner M. Graphene-enabled and directed nanomaterial placement from solution for large-scale device integration. Nature Communications. 9: 4095. PMID 30291247 DOI: 10.1038/S41467-018-06604-4 |
0.329 |
|
| 2018 |
Yang X, Sun Z, Low T, Hu H, Guo X, García de Abajo FJ, Avouris P, Dai Q. Nanomaterial-Based Plasmon-Enhanced Infrared Spectroscopy. Advanced Materials (Deerfield Beach, Fla.). e1704896. PMID 29572965 DOI: 10.1002/Adma.201704896 |
0.324 |
|
| 2018 |
Biswas SR, Gutiérrez CE, Nemilentsau A, Lee IH, Oh SH, Avouris P, Low T. Tunable Graphene Metasurface Reflectarray for Cloaking, Illusion, and Focusing Physical Review Applied. 9: 34021. DOI: 10.1103/Physrevapplied.9.034021 |
0.318 |
|
| 2017 |
Chiu KC, Falk AL, Ho PH, Farmer DB, Tulevski GS, Lee YH, Avouris P, Han SJ. Strong and broadly tunable plasmon resonances in thick films of aligned carbon nanotubes. Nano Letters. PMID 28763225 DOI: 10.1021/Acs.Nanolett.7B02522 |
0.337 |
|
| 2017 |
Falk AL, Chiu KC, Farmer DB, Cao Q, Tersoff J, Lee YH, Avouris P, Han SJ. Coherent Plasmon and Phonon-Plasmon Resonances in Carbon Nanotubes. Physical Review Letters. 118: 257401. PMID 28696746 DOI: 10.1103/Physrevlett.118.257401 |
0.382 |
|
| 2017 |
Engel M, Bryant PW, Neumann R, Giro R, Feger C, Avouris P, Steiner M. A Platform for Analysis of Nanoscale Liquids with an Array of Sensor Devices Based on 2D Material. Nano Letters. PMID 28414911 DOI: 10.1021/Acs.Nanolett.6B03561 |
0.305 |
|
| 2016 |
Low T, Chaves A, Caldwell JD, Kumar A, Fang NX, Avouris P, Heinz TF, Guinea F, Martin-Moreno L, Koppens F. Polaritons in layered two-dimensional materials. Nature Materials. PMID 27893724 DOI: 10.1038/Nmat4792 |
0.322 |
|
| 2016 |
Rodrigo D, Low T, Farmer DB, Altug H, Avouris P. Plasmon coupling in extended structures: Graphene superlattice nanoribbon arrays Physical Review B - Condensed Matter and Materials Physics. 93. DOI: 10.1103/Physrevb.93.125407 |
0.342 |
|
| 2016 |
Farmer DB, Avouris P, Li Y, Heinz TF, Han SJ. Ultrasensitive Plasmonic Detection of Molecules with Graphene Acs Photonics. 3: 553-557. DOI: 10.1021/Acsphotonics.6B00143 |
0.328 |
|
| 2015 |
Engel M, Steiner M, Han SJ, Avouris P. Power Dissipation and Electrical Breakdown in Black Phosphorus. Nano Letters. PMID 26348293 DOI: 10.1021/Acs.Nanolett.5B02622 |
0.315 |
|
| 2015 |
Kumar A, Low T, Fung KH, Avouris P, Fang NX. Tunable Light-Matter Interaction and the Role of Hyperbolicity in Graphene-hBN System. Nano Letters. 15: 3172-80. PMID 25897983 DOI: 10.1021/Acs.Nanolett.5B01191 |
0.341 |
|
| 2015 |
Farmer DB, Rodrigo D, Low T, Avouris P. Plasmon-plasmon hybridization and bandwidth enhancement in nanostructured graphene. Nano Letters. 15: 2582-7. PMID 25749426 DOI: 10.1021/Acs.Nanolett.5B00148 |
0.322 |
|
| 2015 |
Engel M, Steiner M, Seo JW, Hersam MC, Avouris P. Hot spot dynamics in carbon nanotube array devices. Nano Letters. 15: 2127-31. PMID 25713977 DOI: 10.1021/Acs.Nanolett.5B00048 |
0.362 |
|
| 2015 |
Chaves A, Low T, Avouris P, Çaklr D, Peeters FM. Anisotropic exciton Stark shift in black phosphorus Physical Review B - Condensed Matter and Materials Physics. 91. DOI: 10.1103/Physrevb.91.155311 |
0.334 |
|
| 2015 |
Farmer D, Li Y, Yan H, Meng X, Zhu W, Osgood R, Heinz T, Avouris P. Coupling of Strongly Localized Graphene Plasmons to Molecular Vibrations Bulletin of the American Physical Society. 2015: 19-28. DOI: 10.1007/978-3-319-25376-3_3 |
0.348 |
|
| 2014 |
Koppens FH, Mueller T, Avouris P, Ferrari AC, Vitiello MS, Polini M. Photodetectors based on graphene, other two-dimensional materials and hybrid systems. Nature Nanotechnology. 9: 780-93. PMID 25286273 DOI: 10.1038/Nnano.2014.215 |
0.309 |
|
| 2014 |
Freitag M, Low T, Martin-Moreno L, Zhu W, Guinea F, Avouris P. Substrate-sensitive mid-infrared photoresponse in graphene. Acs Nano. 8: 8350-6. PMID 25033317 DOI: 10.1021/Nn502822Z |
0.332 |
|
| 2014 |
Yan H, Low T, Guinea F, Xia F, Avouris P. Tunable phonon-induced transparency in bilayer graphene nanoribbons. Nano Letters. 14: 4581-6. PMID 25019702 DOI: 10.1021/Nl501628X |
0.329 |
|
| 2014 |
Low T, Guinea F, Yan H, Xia F, Avouris P. Novel midinfrared plasmonic properties of bilayer graphene. Physical Review Letters. 112: 116801. PMID 24702400 DOI: 10.1103/Physrevlett.112.116801 |
0.323 |
|
| 2014 |
Li Y, Yan H, Farmer DB, Meng X, Zhu W, Osgood RM, Heinz TF, Avouris P. Graphene plasmon enhanced vibrational sensing of surface-adsorbed layers. Nano Letters. 14: 1573-7. PMID 24528250 DOI: 10.1021/Nl404824W |
0.317 |
|
| 2014 |
Low T, Avouris P. Graphene plasmonics for terahertz to mid-infrared applications. Acs Nano. 8: 1086-101. PMID 24484181 DOI: 10.1021/Nn406627U |
0.335 |
|
| 2014 |
Zhu W, Low T, Lee YH, Wang H, Farmer DB, Kong J, Xia F, Avouris P. Electronic transport and device prospects of monolayer molybdenum disulphide grown by chemical vapour deposition. Nature Communications. 5: 3087. PMID 24435154 DOI: 10.1038/Ncomms4087 |
0.371 |
|
| 2014 |
Avouris P, Farmer DB, Freitag M, Li Y, Low T, Yan H, Wang H. Graphene plasmons: Properties and applications Proceedings of Spie - the International Society For Optical Engineering. 9162. DOI: 10.1117/12.2060587 |
0.321 |
|
| 2014 |
Rakheja S, Wu Y, Wang H, Palacios T, Avouris P, Antoniadis DA. An Ambipolar Virtual-Source-Based Charge-Current Compact Model for Nanoscale Graphene Transistors Ieee Transactions On Nanotechnology. 13: 1005-1013. DOI: 10.1109/Tnano.2014.2344437 |
0.322 |
|
| 2014 |
Avouris P, Freitag M. Graphene photonics, plasmonics, and optoelectronics Ieee Journal On Selected Topics in Quantum Electronics. 20. DOI: 10.1109/Jstqe.2013.2272315 |
0.347 |
|
| 2014 |
Low T, Engel M, Steiner M, Avouris P. Origin of photoresponse in black phosphorus phototransistors Physical Review B - Condensed Matter and Materials Physics. 90. DOI: 10.1103/Physrevb.90.081408 |
0.315 |
|
| 2013 |
Freitag M, Low T, Zhu W, Yan H, Xia F, Avouris P. Photocurrent in graphene harnessed by tunable intrinsic plasmons. Nature Communications. 4: 1951. PMID 23727714 DOI: 10.1038/Ncomms2951 |
0.365 |
|
| 2013 |
Sundaram RS, Engel M, Lombardo A, Krupke R, Ferrari AC, Avouris P, Steiner M. Electroluminescence in single layer MoS2. Nano Letters. 13: 1416-21. PMID 23514373 DOI: 10.1021/Nl400516A |
0.323 |
|
| 2013 |
Freitag M, Low T, Avouris P. Increased responsivity of suspended graphene photodetectors. Nano Letters. 13: 1644-8. PMID 23452264 DOI: 10.1021/Nl4001037 |
0.352 |
|
| 2013 |
Simbeck AJ, Gu D, Kharche N, Satyam PV, Avouris P, Nayak SK. Electronic structure of oxygen-functionalized armchair graphene nanoribbons Physical Review B. 88. DOI: 10.1103/Physrevb.88.035413 |
0.327 |
|
| 2013 |
Scharf B, Perebeinos V, Fabian J, Avouris P. Effects of optical and surface polar phonons on the optical conductivity of doped graphene Physical Review B - Condensed Matter and Materials Physics. 87. DOI: 10.1103/Physrevb.87.035414 |
0.347 |
|
| 2013 |
Zhu W, Low T, Farmer DB, Jenkins K, Ek B, Avouris P. Effect of dual gate control on the alternating current performance of graphene radio frequency device Journal of Applied Physics. 114. DOI: 10.1063/1.4816443 |
0.339 |
|
| 2013 |
Zhu W, Farmer DB, Jenkins KA, Ek B, Oida S, Li X, Bucchignano J, Dawes S, Duch EA, Avouris P. Graphene radio frequency devices on flexible substrate Applied Physics Letters. 102. DOI: 10.1063/1.4810008 |
0.331 |
|
| 2013 |
Yan H, Low T, Zhu W, Wu Y, Freitag M, Li X, Guinea F, Avouris P, Xia F. Damping pathways of mid-infrared plasmons in graphene nanostructures Nature Photonics. 7: 394-399. DOI: 10.1038/Nphoton.2013.57 |
0.361 |
|
| 2013 |
Freitag M, Low T, Xia F, Avouris P. Photoconductivity of biased graphene Nature Photonics. 7: 53-59. DOI: 10.1038/Nphoton.2012.314 |
0.354 |
|
| 2012 |
Liu G, Wu Y, Lin YM, Farmer DB, Ott JA, Bruley J, Grill A, Avouris P, Pfeiffer D, Balandin AA, Dimitrakopoulos C. Epitaxial graphene nanoribbon array fabrication using BCP-assisted nanolithography. Acs Nano. 6: 6786-92. PMID 22780305 DOI: 10.1021/Nn301515A |
0.312 |
|
| 2012 |
Engel M, Steiner M, Sundaram RS, Krupke R, Green AA, Hersam MC, Avouris P. Spatially resolved electrostatic potential and photocurrent generation in carbon nanotube array devices. Acs Nano. 6: 7303-10. PMID 22769018 DOI: 10.1021/Nn302416E |
0.357 |
|
| 2012 |
Engel M, Steiner M, Lombardo A, Ferrari AC, Löhneysen HV, Avouris P, Krupke R. Light-matter interaction in a microcavity-controlled graphene transistor. Nature Communications. 3: 906. PMID 22713748 DOI: 10.1038/Ncomms1911 |
0.347 |
|
| 2012 |
Yan H, Li Z, Li X, Zhu W, Avouris P, Xia F. Infrared spectroscopy of tunable Dirac terahertz magneto-plasmons in graphene. Nano Letters. 12: 3766-71. PMID 22690695 DOI: 10.1021/Nl3016335 |
0.36 |
|
| 2012 |
Zhu W, Low T, Perebeinos V, Bol AA, Zhu Y, Yan H, Tersoff J, Avouris P. Structure and electronic transport in graphene wrinkles. Nano Letters. 12: 3431-6. PMID 22646513 DOI: 10.1021/Nl300563H |
0.376 |
|
| 2012 |
Rauhut N, Engel M, Steiner M, Krupke R, Avouris P, Hartschuh A. Antenna-enhanced photocurrent microscopy on single-walled carbon nanotubes at 30 nm resolution. Acs Nano. 6: 6416-21. PMID 22632038 DOI: 10.1021/Nn301979C |
0.374 |
|
| 2012 |
Wu Y, Jenkins KA, Valdes-Garcia A, Farmer DB, Zhu Y, Bol AA, Dimitrakopoulos C, Zhu W, Xia F, Avouris P, Lin YM. State-of-the-art graphene high-frequency electronics. Nano Letters. 12: 3062-7. PMID 22563820 DOI: 10.1021/Nl300904K |
0.323 |
|
| 2012 |
Yan H, Li X, Chandra B, Tulevski G, Wu Y, Freitag M, Zhu W, Avouris P, Xia F. Tunable infrared plasmonic devices using graphene/insulator stacks. Nature Nanotechnology. 7: 330-4. PMID 22522668 DOI: 10.1038/Nnano.2012.59 |
0.34 |
|
| 2012 |
Wu Y, Farmer DB, Zhu W, Han SJ, Dimitrakopoulos CD, Bol AA, Avouris P, Lin YM. Three-terminal graphene negative differential resistance devices. Acs Nano. 6: 2610-6. PMID 22324780 DOI: 10.1021/Nn205106Z |
0.337 |
|
| 2012 |
Wu Y, Perebeinos V, Lin YM, Low T, Xia F, Avouris P. Quantum behavior of graphene transistors near the scaling limit. Nano Letters. 12: 1417-23. PMID 22316333 DOI: 10.1021/Nl204088B |
0.35 |
|
| 2012 |
Avouris P, Xia F. Graphene applications in electronics and photonics Mrs Bulletin. 37: 1225-1234. DOI: 10.1557/Mrs.2012.206 |
0.342 |
|
| 2012 |
Perebeinos V, Tersoff J, Avouris P. Publisher’s Note: Phonon-Mediated Interlayer Conductance in Twisted Graphene Bilayers [Phys. Rev. Lett.109, 236604 (2012)] Physical Review Letters. 109. DOI: 10.1103/Physrevlett.109.259903 |
0.31 |
|
| 2012 |
Perebeinos V, Tersoff J, Avouris P. Phonon-mediated interlayer conductance in twisted graphene bilayers Physical Review Letters. 109. DOI: 10.1103/Physrevlett.109.236604 |
0.339 |
|
| 2012 |
Low T, Perebeinos V, Tersoff J, Avouris P. Deformation and scattering in graphene over substrate steps Physical Review Letters. 108. DOI: 10.1103/Physrevlett.108.096601 |
0.314 |
|
| 2012 |
Low T, Perebeinos V, Kim R, Freitag M, Avouris P. Cooling of photoexcited carriers in graphene by internal and substrate phonons Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.045413 |
0.343 |
|
| 2012 |
Yan H, Xia F, Li Z, Avouris P. Plasmonics of coupled graphene micro-structures New Journal of Physics. 14: 125001. DOI: 10.1088/1367-2630/14/12/125001 |
0.32 |
|
| 2012 |
Farmer DB, Valdes-Garcia A, Dimitrakopoulos C, Avouris P. Impact of gate resistance in graphene radio frequency transistors Applied Physics Letters. 101. DOI: 10.1063/1.4757422 |
0.305 |
|
| 2012 |
Steiner M, Engel M, Lin YM, Wu Y, Jenkins K, Farmer DB, Humes JJ, Yoder NL, Seo JWT, Green AA, Hersam MC, Krupke R, Avouris P. High-frequency performance of scaled carbon nanotube array field-effect transistors Applied Physics Letters. 101. DOI: 10.1063/1.4742325 |
0.334 |
|
| 2012 |
Avouris P, Dimitrakopoulos C. Graphene: Synthesis and applications Materials Today. 15: 86-97. DOI: 10.1016/S1369-7021(12)70044-5 |
0.313 |
|
| 2011 |
Yan H, Xia F, Zhu W, Freitag M, Dimitrakopoulos C, Bol AA, Tulevski G, Avouris P. Infrared spectroscopy of wafer-scale graphene. Acs Nano. 5: 9854-60. PMID 22077967 DOI: 10.1021/Nn203506N |
0.344 |
|
| 2011 |
Sundaram RS, Steiner M, Chiu HY, Engel M, Bol AA, Krupke R, Burghard M, Kern K, Avouris P. The graphene-gold interface and its implications for nanoelectronics. Nano Letters. 11: 3833-7. PMID 21809874 DOI: 10.1021/Nl201907U |
0.359 |
|
| 2011 |
Rao G, Freitag M, Chiu HY, Sundaram RS, Avouris P. Raman and photocurrent imaging of electrical stress-induced p-n junctions in graphene. Acs Nano. 5: 5848-54. PMID 21675768 DOI: 10.1021/Nn201611R |
0.35 |
|
| 2011 |
Lin YM, Valdes-Garcia A, Han SJ, Farmer DB, Meric I, Sun Y, Wu Y, Dimitrakopoulos C, Grill A, Avouris P, Jenkins KA. Wafer-scale graphene integrated circuit. Science (New York, N.Y.). 332: 1294-7. PMID 21659599 DOI: 10.1126/Science.1204428 |
0.302 |
|
| 2011 |
Wu Y, Lin YM, Bol AA, Jenkins KA, Xia F, Farmer DB, Zhu Y, Avouris P. High-frequency, scaled graphene transistors on diamond-like carbon. Nature. 472: 74-8. PMID 21475197 DOI: 10.1038/Nature09979 |
0.331 |
|
| 2011 |
Xia F, Perebeinos V, Lin YM, Wu Y, Avouris P. The origins and limits of metal-graphene junction resistance. Nature Nanotechnology. 6: 179-84. PMID 21297624 DOI: 10.1038/Nnano.2011.6 |
0.314 |
|
| 2011 |
Zhu W, Dimitrakopoulos C, Freitag M, Avouris P. Layer Number Determination and Thickness-Dependent Properties of Graphene Grown on SiC Ieee Transactions On Nanotechnology. 10: 1196-1201. DOI: 10.1109/Tnano.2011.2130536 |
0.344 |
|
| 2011 |
Koswatta SO, Valdes-Garcia A, Steiner MB, Lin YM, Avouris P. Ultimate RF performance potential of carbon electronics Ieee Transactions On Microwave Theory and Techniques. 59: 2739-2750. DOI: 10.1109/Tmtt.2011.2150241 |
0.386 |
|
| 2011 |
Lin YM, Farmer DB, Jenkins KA, Wu Y, Tedesco JL, Myers-Ward RL, Eddy CR, Gaskill DK, Dimitrakopoulos C, Avouris P. Enhanced performance in epitaxial graphene FETs with optimized channel morphology Ieee Electron Device Letters. 32: 1343-1345. DOI: 10.1109/Led.2011.2162934 |
0.323 |
|
| 2011 |
Farmer DB, Perebeinos V, Lin YM, Dimitrakopoulos C, Avouris P. Charge trapping and scattering in epitaxial graphene Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.205417 |
0.313 |
|
| 2011 |
Kim R, Perebeinos V, Avouris P. Relaxation of optically excited carriers in graphene Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.075449 |
0.335 |
|
| 2011 |
Avouris P. Electron transport and excitations in graphene Procedia Chemistry. 3: 352-362. DOI: 10.1016/J.Proche.2011.08.043 |
0.369 |
|
| 2010 |
Kinoshita M, Steiner M, Engel M, Small JP, Green AA, Hersam MC, Krupke R, Mendez EE, Avouris P. The polarized carbon nanotube thin film LED. Optics Express. 18: 25738-45. PMID 21164919 DOI: 10.1364/Oe.18.025738 |
0.333 |
|
| 2010 |
Chiu HY, Perebeinos V, Lin YM, Avouris P. Controllable p-n junction formation in monolayer graphene using electrostatic substrate engineering. Nano Letters. 10: 4634-9. PMID 20886859 DOI: 10.1021/Nl102756R |
0.339 |
|
| 2010 |
Avouris P. Graphene: electronic and photonic properties and devices. Nano Letters. 10: 4285-94. PMID 20879723 DOI: 10.1021/Nl102824H |
0.35 |
|
| 2010 |
Zhu W, Neumayer D, Perebeinos V, Avouris P. Silicon nitride gate dielectrics and band gap engineering in graphene layers. Nano Letters. 10: 3572-6. PMID 20715804 DOI: 10.1021/Nl101832Y |
0.364 |
|
| 2010 |
Freitag M, Chiu HY, Steiner M, Perebeinos V, Avouris P. Thermal infrared emission from biased graphene. Nature Nanotechnology. 5: 497-501. PMID 20453854 DOI: 10.1038/Nnano.2010.90 |
0.336 |
|
| 2010 |
Lin YM, Dimitrakopoulos C, Jenkins KA, Farmer DB, Chiu HY, Grill A, Avouris P. 100-GHz transistors from wafer-scale epitaxial graphene. Science (New York, N.Y.). 327: 662. PMID 20133565 DOI: 10.1126/Science.1184289 |
0.336 |
|
| 2010 |
Xia F, Farmer DB, Lin YM, Avouris P. Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature. Nano Letters. 10: 715-8. PMID 20092332 DOI: 10.1021/Nl9039636 |
0.361 |
|
| 2010 |
Mueller T, Kinoshita M, Steiner M, Perebeinos V, Bol AA, Farmer DB, Avouris P. Efficient narrow-band light emission from a single carbon nanotube p-n diode. Nature Nanotechnology. 5: 27-31. PMID 19915571 DOI: 10.1038/Nnano.2009.319 |
0.345 |
|
| 2010 |
Avouris P, Martel R. Progress in Carbon Nanotube Electronics and Photonics Mrs Bulletin. 35: 306-313. DOI: 10.1557/Mrs2010.553 |
0.367 |
|
| 2010 |
Dimitrakopoulos C, Lin YM, Grill A, Farmer DB, Freitag M, Sun Y, Han SJ, Chen Z, Jenkins KA, Zhu Y, Liu Z, McArdle TJ, Ott JA, Wisnieff R, Avouris P. Wafer-scale epitaxial graphene growth on the Si-face of hexagonal SiC (0001) for high frequency transistors Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 28: 985-992. DOI: 10.1116/1.3480961 |
0.352 |
|
| 2010 |
Lin YM, Chiu HY, Jenkins KA, Farmer DB, Avouris P, Valdes-Garcia A. Dual-gate graphene FETs with fT of 50 GHz Ieee Electron Device Letters. 31: 68-70. DOI: 10.1109/Led.2009.2034876 |
0.337 |
|
| 2010 |
Perebeinos V, Avouris P. Inelastic scattering and current saturation in graphene Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.195442 |
0.348 |
|
| 2010 |
Lin YM, Dimitrakopoulos C, Farmer DB, Han SJ, Wu Y, Zhu W, Gaskill DK, Tedesco JL, Myers-Ward RL, Eddy CR, Grill A, Avouris P. Multicarrier transport in epitaxial multilayer graphene Applied Physics Letters. 97. DOI: 10.1063/1.3485671 |
0.322 |
|
| 2010 |
Farmer DB, Lin YM, Avouris P. Graphene field-effect transistors with self-aligned gates Applied Physics Letters. 97. DOI: 10.1063/1.3459972 |
0.353 |
|
| 2009 |
Freitag M, Steiner M, Naumov A, Small JP, Bol AA, Perebeinos V, Avouris P. Carbon nanotube photo- and electroluminescence in longitudinal electric fields. Acs Nano. 3: 3744-8. PMID 19928934 DOI: 10.1021/Nn900962F |
0.375 |
|
| 2009 |
Xia F, Mueller T, Lin YM, Valdes-Garcia A, Avouris P. Ultrafast graphene photodetector. Nature Nanotechnology. 4: 839-43. PMID 19893532 DOI: 10.1038/Nnano.2009.292 |
0.308 |
|
| 2009 |
Farmer DB, Chiu HY, Lin YM, Jenkins KA, Xia F, Avouris P. Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors. Nano Letters. 9: 4474-8. PMID 19883119 DOI: 10.1021/Nl902788U |
0.338 |
|
| 2009 |
Steiner M, Freitag M, Perebeinos V, Naumov A, Small JP, Bol AA, Avouris P. Gate-variable light absorption and emission in a semiconducting carbon nanotube. Nano Letters. 9: 3477-81. PMID 19637914 DOI: 10.1021/Nl9016804 |
0.39 |
|
| 2009 |
Steiner M, Freitag M, Perebeinos V, Tsang JC, Small JP, Kinoshita M, Yuan D, Liu J, Avouris P. Phonon populations and electrical power dissipation in carbon nanotube transistors. Nature Nanotechnology. 4: 320-4. PMID 19421219 DOI: 10.1038/Nnano.2009.22 |
0.392 |
|
| 2009 |
Rotkin SV, Perebeinos V, Petrov AG, Avouris P. An essential mechanism of heat dissipation in carbon nanotube electronics. Nano Letters. 9: 1850-5. PMID 19334687 DOI: 10.1021/Nl803835Z |
0.386 |
|
| 2009 |
Freitag M, Steiner M, Martin Y, Perebeinos V, Chen Z, Tsang JC, Avouris P. Energy dissipation in graphene field-effect transistors. Nano Letters. 9: 1883-8. PMID 19331421 DOI: 10.1021/Nl803883H |
0.365 |
|
| 2009 |
Xia F, Mueller T, Golizadeh-Mojarad R, Freitag M, Lin YM, Tsang J, Perebeinos V, Avouris P. Photocurrent imaging and efficient photon detection in a graphene transistor. Nano Letters. 9: 1039-44. PMID 19203207 DOI: 10.1021/Nl8033812 |
0.302 |
|
| 2009 |
Farmer DB, Golizadeh-Mojarad R, Perebeinos V, Lin YM, Tulevski GS, Tsang JC, Avouris P. Chemical doping and electron-hole conduction asymmetry in graphene devices. Nano Letters. 9: 388-92. PMID 19102701 DOI: 10.1021/Nl803214A |
0.355 |
|
| 2009 |
Perebeinos V, Rotkin SV, Petrov AG, Avouris P. The effects of substrate phonon mode scattering on transport in carbon nanotubes. Nano Letters. 9: 312-6. PMID 19055370 DOI: 10.1021/Nl8030086 |
0.384 |
|
| 2009 |
Shaver J, Srivastava A, Kono J, Crooker SA, Htoon H, Klimov VI, Fagan JA, Hobbie EK, Ubrig N, Portugall O, Perebeinos V, Avouris P. High field magneto-optical spectroscopy of highly aligned individual and ensemble single-walled carbon nanotubes International Journal of Modern Physics B. 23: 2667-2675. DOI: 10.1142/S0217979209062153 |
0.352 |
|
| 2009 |
Zhu W, Perebeinos V, Freitag M, Avouris P. Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.235402 |
0.331 |
|
| 2009 |
Mueller T, Xia F, Freitag M, Tsang J, Avouris P. Role of contacts in graphene transistors: A scanning photocurrent study Physical Review B. 79: 245430. DOI: 10.1103/Physrevb.79.245430 |
0.359 |
|
| 2009 |
Farmer DB, Lin YM, Afzali-Ardakani A, Avouris P. Behavior of a chemically doped graphene junction Applied Physics Letters. 94. DOI: 10.1063/1.3142865 |
0.349 |
|
| 2009 |
Avouris P. Carbon nanotube electronics and photonics Physics Today. 62: 34-40. DOI: 10.1063/1.3074261 |
0.371 |
|
| 2009 |
Steiner M, Freitag M, Tsang JC, Perebeinos V, Bol AA, Failla AV, Avouris P. How does the substrate affect the Raman and excited state spectra of a carbon nanotube? Applied Physics a: Materials Science and Processing. 96: 271-282. DOI: 10.1007/S00339-009-5211-5 |
0.353 |
|
| 2008 |
Engel M, Small JP, Steiner M, Freitag M, Green AA, Hersam MC, Avouris P. Thin film nanotube transistors based on self-assembled, aligned, semiconducting carbon nanotube arrays. Acs Nano. 2: 2445-52. PMID 19206278 DOI: 10.1021/Nn800708W |
0.342 |
|
| 2008 |
Xia F, Steiner M, Lin YM, Avouris P. A microcavity-controlled, current-driven, on-chip nanotube emitter at infrared wavelengths. Nature Nanotechnology. 3: 609-13. PMID 18839000 DOI: 10.1038/Nnano.2008.241 |
0.341 |
|
| 2008 |
Perebeinos V, Avouris P. Phonon and electronic nonradiative decay mechanisms of excitons in carbon nanotubes. Physical Review Letters. 101: 057401. PMID 18764429 DOI: 10.1103/Physrevlett.101.057401 |
0.387 |
|
| 2008 |
Koswatta SO, Perebeinos V, Lundstrom MS, Avouris P. Computational study of exciton generation in suspended carbon nanotube transistors. Nano Letters. 8: 1596-601. PMID 18457455 DOI: 10.1021/Nl0801226 |
0.362 |
|
| 2008 |
Lin YM, Avouris P. Strong suppression of electrical noise in bilayer graphene nanodevices. Nano Letters. 8: 2119-25. PMID 18298094 DOI: 10.1021/Nl080241L |
0.314 |
|
| 2008 |
Hertel T, Perebeinos V, Crochet J, Arnold K, Kappes M, Avouris P. Intersubband decay of 1-D exciton resonances in carbon nanotubes. Nano Letters. 8: 87-91. PMID 18069868 DOI: 10.1021/Nl0720915 |
0.75 |
|
| 2008 |
Chen Z, Farmer D, Xu S, Gordon R, Avouris P, Appenzeller J. Externally assembled gate-all-around carbon nanotube field-effect transistor Ieee Electron Device Letters. 29: 183-185. DOI: 10.1109/Led.2007.914069 |
0.38 |
|
| 2008 |
Lin YM, Perebeinos V, Chen Z, Avouris P. Electrical observation of subband formation in graphene nanoribbons Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.161409 |
0.325 |
|
| 2008 |
Shaver J, Crooker SA, Fagan JA, Hobbie EK, Ubrig N, Portugall O, Perebeinos V, Avouris P, Kono J. Magneto-optical spectroscopy of highly aligned carbon nanotubes: Identifying the role of threading magnetic flux Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.081402 |
0.345 |
|
| 2008 |
Avouris P, Freitag M, Perebeinos V. Carbon-nanotube photonics and optoelectronics Nature Photonics. 2: 341-350. DOI: 10.1038/Nphoton.2008.94 |
0.406 |
|
| 2008 |
Freitag M, Tsang J, Avouris P. Local measurement of charge density in carbon nanotubes by Raman spectroscopy Physica Status Solidi B-Basic Solid State Physics. 245: 2216-2220. DOI: 10.1002/Pssb.200879588 |
0.399 |
|
| 2007 |
Tsang JC, Freitag M, Perebeinos V, Liu J, Avouris P. Doping and phonon renormalization in carbon nanotubes. Nature Nanotechnology. 2: 725-30. PMID 18654413 DOI: 10.1038/Nnano.2007.321 |
0.4 |
|
| 2007 |
Avouris P, Chen Z, Perebeinos V. Carbon-based electronics. Nature Nanotechnology. 2: 605-15. PMID 18654384 DOI: 10.1038/Nnano.2007.300 |
0.402 |
|
| 2007 |
Tulevski GS, Hannon J, Afzali A, Chen Z, Avouris P, Kagan CR. Chemically assisted directed assembly of carbon nanotubes for the fabrication of large-scale device arrays. Journal of the American Chemical Society. 129: 11964-8. PMID 17824611 DOI: 10.1021/Ja073647T |
0.378 |
|
| 2007 |
Chen J, Cheng G, Stern E, Reed MA, Avouris P. Electrically excited infrared emission from InN nanowire transistors. Nano Letters. 7: 2276-80. PMID 17616231 DOI: 10.1021/Nl070852Y |
0.343 |
|
| 2007 |
Freitag M, Tsang JC, Bol A, Yuan D, Liu J, Avouris P. Imaging of the Schottky barriers and charge depletion in carbon nanotube transistors. Nano Letters. 7: 2037-42. PMID 17559288 DOI: 10.1021/Nl070900E |
0.391 |
|
| 2007 |
Perebeinos V, Avouris P. Exciton ionization, Franz-Keldysh, and Stark effects in carbon nanotubes. Nano Letters. 7: 609-13. PMID 17261074 DOI: 10.1021/Nl0625022 |
0.36 |
|
| 2007 |
Lin Y, Chen Z, Appenzeller J, Solomon PM, Avouris P. Advances in Carbon Nanotube Devices and Circuits The Japan Society of Applied Physics. 2007: 1164-1165. DOI: 10.7567/Ssdm.2007.J-9-2 |
0.325 |
|
| 2007 |
Appenzeller J, Lin YM, Knoch J, Chen Z, Avouris P. 1/f noise in carbon nanotube Devices - On the impact of contacts and device geometry Ieee Transactions On Nanotechnology. 6: 368-373. DOI: 10.1109/Tnano.2007.892052 |
0.327 |
|
| 2007 |
Avouris P. Electronics with carbon nanotubes Physics World. 20: 40-45. DOI: 10.1088/2058-7058/20/3/32 |
0.339 |
|
| 2007 |
Lin YM, Tsang JC, Freitag M, Avouris P. Impact of oxide substrate on electrical and optical properties of carbon nanotube devices Nanotechnology. 18. DOI: 10.1088/0957-4484/18/29/295202 |
0.368 |
|
| 2007 |
Freitag M, Tsang JC, Bol A, Avouris P, Yuan D, Liu J. Scanning photovoltage microscopy of potential modulations in carbon nanotubes Applied Physics Letters. 91. DOI: 10.1063/1.2757100 |
0.365 |
|
| 2007 |
Chen Z, Lin Y, Rooks MJ, Avouris P. Graphene nano-ribbon electronics Physica E-Low-Dimensional Systems & Nanostructures. 40: 228-232. DOI: 10.1016/J.Physe.2007.06.020 |
0.362 |
|
| 2007 |
Lin YM, Appenzeller J, Chen Z, Avouris P. Electrical transport and 1 / f noise in semiconducting carbon nanotubes Physica E: Low-Dimensional Systems and Nanostructures. 37: 72-77. DOI: 10.1016/J.Physe.2006.07.008 |
0.332 |
|
| 2006 |
Freitag M, Tsang JC, Kirtley J, Carlsen A, Chen J, Troeman A, Hilgenkamp H, Avouris P. Electrically excited, localized infrared emission from single carbon nanotubes. Nano Letters. 6: 1425-33. PMID 16834423 DOI: 10.1021/Nl060462W |
0.376 |
|
| 2006 |
Lin YM, Appenzeller J, Knoch J, Chen Z, Avouris P. Low-frequency current fluctuations in individual semiconducting single-wall carbon nanotubes. Nano Letters. 6: 930-6. PMID 16683828 DOI: 10.1021/Nl052528D |
0.321 |
|
| 2006 |
Klinke C, Hannon JB, Afzali A, Avouris P. Field-effect transistors assembled from functionalized carbon nanotubes. Nano Letters. 6: 906-10. PMID 16683823 DOI: 10.1021/Nl052473F |
0.391 |
|
| 2006 |
Chen Z, Appenzeller J, Lin YM, Sippel-Oakley J, Rinzler AG, Tang J, Wind SJ, Solomon PM, Avouris P. An integrated logic circuit assembled on a single carbon nanotube. Science (New York, N.Y.). 311: 1735. PMID 16556834 DOI: 10.1126/Science.1122797 |
0.382 |
|
| 2006 |
Perebeinos V, Tersoff J, Avouris P. Mobility in semiconducting carbon nanotubes at finite carrier density. Nano Letters. 6: 205-8. PMID 16464035 DOI: 10.1021/Nl052044H |
0.343 |
|
| 2006 |
Avouris P. Excited states and electroluminescence of carbon nanotubes Frontiers in Optics. DOI: 10.1364/Ls.2006.Ltul1 |
0.387 |
|
| 2006 |
Perebeinos V, Avouris P. Impact excitation by hot carriers in carbon nanotubes Physical Review B - Condensed Matter and Materials Physics. 74. DOI: 10.1103/Physrevb.74.121410 |
0.378 |
|
| 2006 |
Avouris P, Chen J. Nanotube electronics and optoelectronics Materials Today. 9: 46-54. DOI: 10.1016/S1369-7021(06)71653-4 |
0.397 |
|
| 2006 |
Klinke C, Afzali A, Avouris P. Interaction of solid organic acids with carbon nanotube field effect transistors Chemical Physics Letters. 430: 75-79. DOI: 10.1016/J.Cplett.2006.08.090 |
0.347 |
|
| 2006 |
Avouris P, Chen J, Freitag M, Perebeinos V, Tsang JC. Carbon-Nanotube Optoelectronics Physica Status Solidi B-Basic Solid State Physics. 243: 3197-3203. DOI: 10.1007/978-3-540-72865-8_14 |
0.406 |
|
| 2005 |
Perebeinos V, Tersoff J, Avouris P. Radiative lifetime of excitons in carbon nanotubes. Nano Letters. 5: 2495-9. PMID 16351202 DOI: 10.1021/Nl051828S |
0.354 |
|
| 2005 |
Chen J, Perebeinos V, Freitag M, Tsang J, Fu Q, Liu J, Avouris P. Bright infrared emission from electrically induced excitons in carbon nanotubes. Science (New York, N.Y.). 310: 1171-4. PMID 16293757 DOI: 10.1126/Science.1119177 |
0.399 |
|
| 2005 |
Chen Z, Appenzeller J, Knoch J, Lin YM, Avouris P. The role of metal-nanotube contact in the performance of carbon nanotube field-effect transistors. Nano Letters. 5: 1497-502. PMID 16178264 DOI: 10.1021/Nl0508624 |
0.365 |
|
| 2005 |
Qiu X, Freitag M, Perebeinos V, Avouris P. Photoconductivity spectra of single-carbon nanotubes: implications on the nature of their excited States. Nano Letters. 5: 749-52. PMID 15826121 DOI: 10.1021/Nl050227Y |
0.399 |
|
| 2005 |
Perebeinos V, Tersoff J, Avouris P. Electron-phonon interaction and transport in semiconducting carbon nanotubes. Physical Review Letters. 94: 086802. PMID 15783915 DOI: 10.1103/Physrevlett.94.086802 |
0.385 |
|
| 2005 |
Klinke C, Chen J, Afzali A, Avouris P. Charge transfer induced polarity switching in carbon nanotube transistors. Nano Letters. 5: 555-8. PMID 15755113 DOI: 10.1021/Nl048055C |
0.347 |
|
| 2005 |
Perebeinos V, Tersoff J, Avouris P. Effect of exciton-phonon coupling in the calculated optical absorption of carbon nanotubes. Physical Review Letters. 94: 027402. PMID 15698227 DOI: 10.1103/Physrevlett.94.027402 |
0.336 |
|
| 2005 |
Lin YM, Appenzeller J, Knoch J, Avouris P. High-performance carbon nanotube field-effect transistor with tunable polarities Ieee Transactions On Nanotechnology. 4: 481-489. DOI: 10.1109/Tnano.2005.851427 |
0.364 |
|
| 2005 |
Appenzeller J, Lin YM, Knoch J, Chen Z, Avouris P. Comparing carbon nanotube transistors - The ideal choice: A novel tunneling device design Ieee Transactions On Electron Devices. 52: 2568-2576. DOI: 10.1109/Ted.2005.859654 |
0.333 |
|
| 2005 |
Lin YM, Appenzeller J, Chen Z, Chen ZG, Cheng HM, Avouris P. High-performance dual-gate carbon nanotube FETs with 40-nm gate length Ieee Electron Device Letters. 26: 823-825. DOI: 10.1109/Led.2005.857704 |
0.34 |
|
| 2005 |
Tersoff J, Freitag M, Tsang JC, Avouris P. Device modeling of long-channel nanotube electro-optical emitter Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1957116 |
0.318 |
|
| 2005 |
Chen J, Klinke C, Afzali A, Avouris P. Self-aligned carbon nanotube transistors with charge transfer doping Applied Physics Letters. 86: 123108. DOI: 10.1063/1.1888054 |
0.366 |
|
| 2004 |
Freitag M, Chen J, Tersoff J, Tsang JC, Fu Q, Liu J, Avouris P. Mobile ambipolar domain in carbon-nanotube infrared emitters. Physical Review Letters. 93: 076803. PMID 15324264 DOI: 10.1103/Physrevlett.93.076803 |
0.403 |
|
| 2004 |
Perebeinos V, Tersoff J, Avouris P. Scaling of excitons in carbon nanotubes. Physical Review Letters. 92: 257402. PMID 15245063 DOI: 10.1103/Physrevlett.92.257402 |
0.347 |
|
| 2004 |
Nguyen TQ, Martel R, Avouris P, Bushey ML, Brus L, Nuckolls C. Molecular interactions in one-dimensional organic nanostructures. Journal of the American Chemical Society. 126: 5234-42. PMID 15099108 DOI: 10.1021/Ja031600B |
0.308 |
|
| 2004 |
Avouris P. Carbon Nanotube Electronics and Optoelectronics Mrs Bulletin. 29: 403-410. DOI: 10.1557/Mrs2004.123 |
0.398 |
|
| 2004 |
Appenzeller J, Lin YM, Knoch J, Avouris P. Band-to-band tunneling in carbon nanotube field-effect transistors Physical Review Letters. 93. DOI: 10.1103/Physrevlett.93.196805 |
0.362 |
|
| 2004 |
Appenzeller J, Knoch J, Radosavljević M, Avouris P. Multimode transport in schottky-barrier carbon-nanotube field-effect transistors Physical Review Letters. 92: 226802-1. DOI: 10.1103/Physrevlett.92.226802 |
0.379 |
|
| 2004 |
Appenzeller J, Radosavljević M, Knoch J, Avouris P. Tunneling Versus Thermionic Emission in One-Dimensional Semiconductors Physical Review Letters. 92: 483011-483014. DOI: 10.1103/Physrevlett.92.048301 |
0.335 |
|
| 2004 |
Radosavljević M, Appenzeller J, Avouris P, Knoch J. High performance of potassium n-doped carbon nanotube field-effect transistors Applied Physics Letters. 84: 3693-3695. DOI: 10.1063/1.1737062 |
0.363 |
|
| 2004 |
Lin YM, Appenzeller J, Avouris P. Ambipolar-to-unipolar conversion of carbon nanotube transistors by gate structure engineering Nano Letters. 4: 947-950. DOI: 10.1021/Nl049745J |
0.347 |
|
| 2004 |
Freitag M, Perebeinos V, Chen J, Stein A, Tsang JC, Misewich JA, Martel R, Avouris P. Hot carrier electroluminescence from a single carbon nanotube Nano Letters. 4: 1063-1066. DOI: 10.1021/Nl049607U |
0.371 |
|
| 2003 |
Wind SJ, Appenzeller J, Avouris P. Lateral scaling in carbon-nanotube field-effect transistors. Physical Review Letters. 91: 058301. PMID 12906636 DOI: 10.1103/Physrevlett.91.058301 |
0.369 |
|
| 2003 |
Misewich JA, Martel R, Avouris P, Tsang JC, Heinze S, Tersoff J. Electrically induced optical emission from a carbon nanotube FET Science. 300: 783-786. PMID 12730598 DOI: 10.1126/Science.1081294 |
0.38 |
|
| 2003 |
Wind SJ, Radosavljević M, Appenzeller J, Avouris P. Transistor structures for the study of scaling in carbon nanotubes Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 21: 2856-2859. DOI: 10.1116/1.1624260 |
0.375 |
|
| 2003 |
Heinze S, Radosavljevic M, Tersoff J, Avouris P. Unexpected scaling of the performance of carbon nanotube Schottky-barrier transistors Physical Review B. 68: 235418. DOI: 10.1103/Physrevb.68.235418 |
0.332 |
|
| 2003 |
Heinze S, Tersoff J, Avouris P. Electrostatic engineering of nanotube transistors for improved performance Applied Physics Letters. 83: 5038-5040. DOI: 10.1063/1.1632531 |
0.332 |
|
| 2003 |
Radosavljević M, Heinze S, Tersoff J, Avouris P. Drain voltage scaling in carbon nanotube transistors Applied Physics Letters. 83: 2435-2437. DOI: 10.1063/1.1610791 |
0.335 |
|
| 2003 |
Radosavljević M, Appenzeller J, Derycke V, Martel R, Avouris P, Loiseau A, Cochon JL, Pigache D. Electrical properties and transport in boron nitride nanotubes Applied Physics Letters. 82: 4131-4133. DOI: 10.1063/1.1581370 |
0.363 |
|
| 2003 |
Freitag M, Martin Y, Misewich JA, Martel R, Avouris P. Photoconductivity of single carbon nanotubes Nano Letters. 3: 1067-1071. DOI: 10.1021/Nl034313E |
0.406 |
|
| 2003 |
Cui X, Freitag M, Martel R, Brus L, Avouris P. Controlling Energy-Level Alignments at Carbon Nanotube/Au Contacts Nano Letters. 3: 783-787. DOI: 10.1021/Nl034193A |
0.373 |
|
| 2003 |
Lang ND, Avouris P. Understanding the Variation of the Electrostatic Potential along a Biased Molecular Wire Nano Letters. 3: 737-740. DOI: 10.1021/Nl034166K |
0.331 |
|
| 2003 |
Arnold MS, Avouris P, Pan ZW, Wang ZL. Field-Effect Transistors Based on Single Semiconducting Oxide Nanobelts Journal of Physical Chemistry B. 107: 659-663. DOI: 10.1021/Jp0271054 |
0.352 |
|
| 2002 |
Avouris P. Molecular electronics with carbon nanotubes. Accounts of Chemical Research. 35: 1026-34. PMID 12484790 DOI: 10.1021/Ar010152E |
0.393 |
|
| 2002 |
Appenzeller J, Knoch J, Derycke V, Martel R, Wind S, Avouris P. Field-modulated carrier transport in carbon nanotube transistors. Physical Review Letters. 89: 126801. PMID 12225112 DOI: 10.1103/Physrevlett.89.126801 |
0.384 |
|
| 2002 |
Wind SJ, Martel R, Avouris P. Localized and directed lateral growth of carbon nanotubes from a porous template Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2745-2748. DOI: 10.1116/1.1523019 |
0.315 |
|
| 2002 |
Wind SJ, Appenzeller J, Martel R, Derycke V, Avouris P. Fabrication and electrical characterization of top gate single-wall carbon nanotube field-effect transistors Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 20: 2798-2801. DOI: 10.1116/1.1521731 |
0.353 |
|
| 2002 |
Heinze S, Tersoff J, Martel R, Derycke V, Appenzeller J, Avouris P. Carbon nanotubes as Schottky barrier transistors Physical Review Letters. 89: 1068011-1068014. DOI: 10.1103/Physrevlett.89.106801 |
0.372 |
|
| 2002 |
Avouris P, Martel R, Heinze S, Radosavljevic M, Wind S, Derycke V, Appenzeller J, Terso J. The role of Schottky barriers on the behavior of carbon nanotube field‐effect transistors Structural and Electronic Properties of Molecular Nanostructures. Xvi International Winterschool On Electronic Properties of Novel Materials. 633: 508-512. DOI: 10.1063/1.1514172 |
0.375 |
|
| 2002 |
Collins PG, Avouris P. Intershell Conductance of Multiwalled Carbon Nanotubes Structural and Electronic Properties of Molecular Nanostructures. Xvi International Winterschool On Electronic Properties of Novel Materials. 633: 223-226. DOI: 10.1063/1.1514110 |
0.362 |
|
| 2002 |
Wind SJ, Appenzeller J, Martel R, Derycke V, Avouris P. Erratum: “Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes” [Appl. Phys. Lett. 80, 3817 (2002)] Applied Physics Letters. 81: 1359-1359. DOI: 10.1063/1.1502905 |
0.362 |
|
| 2002 |
Wind SJ, Appenzeller J, Martel R, Derycke V, Avouris P. Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes Applied Physics Letters. 80: 3817-3819. DOI: 10.1063/1.1480877 |
0.374 |
|
| 2002 |
Derycke V, Martel R, Appenzeller J, Avouris P. Controlling doping and carrier injection in carbon nanotube transistors Applied Physics Letters. 80: 2773-2775. DOI: 10.1063/1.1467702 |
0.371 |
|
| 2002 |
Derycke V, Martel R, Radosavljević M, Ross aFM, Avouris P. Catalyst-Free Growth of Ordered Single-Walled Carbon Nanotube Networks Nano Letters. 2: 1043-1046. DOI: 10.1021/Nl0256309 |
0.346 |
|
| 2002 |
Rochefort A, Martel R, Avouris P. Electrical Switching in π-Resonant 1D Intermolecular Channels Nano Letters. 2: 877-880. DOI: 10.1021/Nl025599A |
0.342 |
|
| 2002 |
Lang ND, Avouris P. Effects of Coadsorption on the Conductance of Molecular Wires Nano Letters. 2: 1047-1050. DOI: 10.1021/Nl020202O |
0.301 |
|
| 2002 |
Rochefort aA, Avouris P. Quantum Size Effects in Carbon Nanotube Intramolecular Junctions Nano Letters. 2: 253-256. DOI: 10.1021/Nl015705T |
0.378 |
|
| 2002 |
Avouris P, Martel R, Derycke V, Appenzeller J. Carbon nanotube transistors and logic circuits Physica B: Condensed Matter. 323: 6-14. DOI: 10.1016/S0921-4526(02)00870-0 |
0.318 |
|
| 2002 |
Appenzeller J, Martel R, Derycke V, Radosavljeví M, Wind S, Neumayer D, Avouris P. Carbon nanotubes as potential building blocks for future nanoelectronics Microelectronic Engineering. 64: 391-397. DOI: 10.1016/S0167-9317(02)00813-4 |
0.357 |
|
| 2002 |
Collins PG, Avouris P. Multishell conduction in multiwalled carbon nanotubes Applied Physics A. 74: 329-332. DOI: 10.1007/S003390201280 |
0.368 |
|
| 2001 |
Collins PG, Arnold MS, Avouris P. Engineering carbon nanotubes and nanotube circuits using electrical breakdown. Science. 292: 706-709. PMID 11326094 DOI: 10.1126/Science.1058782 |
0.369 |
|
| 2001 |
Collins PG, Hersam M, Arnold M, Martel R, Avouris P. Current Saturation and Electrical Breakdown in Multiwalled Carbon Nanotubes Physical Review Letters. 86: 3128-3131. PMID 11290124 DOI: 10.1103/Physrevlett.86.3128 |
0.338 |
|
| 2001 |
Knoch J, Appenzeller J, Lengeler B, Martel R, Solomon P, Avouris P, Dieker C, Lu Y, Wang KL, Scholvin J, del Alamo JA. Technology for the fabrication of ultrashort channel metal–oxide–semiconductor field-effect transistors Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 19: 1737-1741. DOI: 10.1116/1.1351803 |
0.304 |
|
| 2001 |
Martel R, Derycke V, Lavoie C, Appenzeller J, Chan KK, Tersoff J, Avouris P. Ambipolar electrical transport in semiconducting single-wall carbon nanotubes Physical Review Letters. 87. DOI: 10.1103/Physrevlett.87.256805 |
0.376 |
|
| 2001 |
Appenzeller J, Martel R, Avouris P, Stahl H, Hunger UT, Lengeler B. Phase-coherent transport in ropes of single-wall carbon nanotubes Physical Review B - Condensed Matter and Materials Physics. 64: 1214041-1214044. DOI: 10.1103/Physrevb.64.121404 |
0.312 |
|
| 2001 |
Liu K, Avouris P, Martel R, Hsu WK. Electrical transport in doped multiwalled carbon nanotubes Physical Review B. 63: 161404. DOI: 10.1103/Physrevb.63.161404 |
0.408 |
|
| 2001 |
Appenzeller J, Martel R, Avouris P, Stahl H, Lengeler B. Optimized contact configuration for the study of transport phenomena in ropes of single-wall carbon nanotubes Applied Physics Letters. 78: 3313-3315. DOI: 10.1063/1.1373413 |
0.343 |
|
| 2001 |
Rochefort A, Di Ventra M, Avouris P. Switching behavior of semiconducting carbon nanotubes under an external electric field Applied Physics Letters. 78: 2521-2523. DOI: 10.1063/1.1367295 |
0.365 |
|
| 2001 |
Derycke V, Martel R, Appenzeller J, Avouris P. Carbon Nanotube Inter- and Intramolecular Logic Gates Nano Letters. 1: 453-456. DOI: 10.1021/Nl015606F |
0.347 |
|
| 2001 |
Sorescu DC, Jordan KD, Avouris P. Theoretical study of oxygen adsorption on graphite and the (8,0) single-walled carbon nanotube Journal of Physical Chemistry B. 105: 11227-11232. DOI: 10.1021/Jp0122979 |
0.327 |
|
| 2001 |
Stahl H, Appenzeller J, Lengeler B, Martel R, Avouris P. Investigation of the inter-tube coupling in single-wall nanotube ropes Materials Science and Engineering C. 15: 291-294. DOI: 10.1016/S0928-4931(01)00229-6 |
0.312 |
|
| 2000 |
Collins PG, Avouris P. Nanotubes for electronics. Scientific American. 283: 62-69. PMID 11103460 DOI: 10.1038/Scientificamerican1200-62 |
0.341 |
|
| 2000 |
Shea HR, Martel R, Avouris P. Electrical transport in rings of single-wall nanotubes: one-dimensional localization Physical Review Letters. 84: 4441-4444. PMID 10990706 DOI: 10.1103/Physrevlett.84.4441 |
0.338 |
|
| 2000 |
Landman U, Barnett RN, Scherbakov AG, Avouris P. Metal-semiconductor nanocontacts: silicon nanowires Physical Review Letters. 85: 1958-61. PMID 10970657 DOI: 10.1103/Physrevlett.85.1958 |
0.341 |
|
| 2000 |
Stahl H, Appenzeller J, Martel R, Avouris P, Lengeler B. Intertube coupling in ropes of single-wall carbon nanotubes Physical Review Letters. 85: 5186-5189. DOI: 10.1103/Physrevlett.85.5186 |
0.314 |
|
| 2000 |
Lang ND, Avouris P. Electrical conductance of parallel atomic wires Physical Review B. 62: 7325-7329. DOI: 10.1103/Physrevb.62.7325 |
0.34 |
|
| 2000 |
Rochefort A, Avouris P. Electron Interference Effects on the Conductance of Doped Carbon Nanotubes The Journal of Physical Chemistry A. 104: 9807-9811. DOI: 10.1021/Jp002690Z |
0.384 |
|
| 1999 |
Martel R, Schmidt T, Sandstrom RL, Avouris P. Current-induced nanochemistry: Local oxidation of thin metal films Journal of Vacuum Science and Technology. 17: 1451-1456. DOI: 10.1116/1.581835 |
0.302 |
|
| 1999 |
Rochefort A, Avouris P, Lesage F, Salahub DR. Electrical and mechanical properties of distorted carbon nanotubes Physical Review B - Condensed Matter and Materials Physics. 60: 13824-13830. DOI: 10.1103/Physrevb.60.13824 |
0.382 |
|
| 1999 |
Martel R, Shea HR, Avouris P. Ring Formation in Single-Wall Carbon Nanotubes Journal of Physical Chemistry B. 103: 7551-7556. DOI: 10.1021/Jp991513Z |
0.338 |
|
| 1999 |
Rochefort A, Salahub DR, Avouris P. The Effects of Finite Length on the Electronic Structure of Carbon Nanotubes Journal of Physical Chemistry B. 103: 641-646. DOI: 10.1021/Jp983725M |
0.365 |
|
| 1999 |
Avouris P, Hertel T, Martel R, Schmidt T, Shea H, Walkup R. Carbon nanotubes: nanomechanics, manipulation, and electronic devices Applied Surface Science. 141: 201-209. DOI: 10.1016/S0169-4332(98)00506-6 |
0.669 |
|
| 1999 |
Shea HR, Martel R, Hertel T, Schmidt T, Avouris P. Manipulation of carbon nanotubes and properties of nanotube field-effect transistors and rings Microelectronic Engineering. 46: 101-104. DOI: 10.1016/S0167-9317(99)00025-8 |
0.656 |
|
| 1998 |
Lang ND, Avouris P. Oscillatory Conductance of Carbon-Atom Wires Physical Review Letters. 81: 3515-3518. DOI: 10.1103/Physrevlett.81.3515 |
0.346 |
|
| 1998 |
Foley ET, Kam AF, Lyding JW, Avouris P. Cryogenic UHV-STM Study of Hydrogen and Deuterium Desorption from Si(100) Physical Review Letters. 80: 1336-1339. DOI: 10.1103/Physrevlett.80.1336 |
0.302 |
|
| 1998 |
Hertel T, Walkup RE, Avouris P. Deformation of carbon nanotubes by surface van der Waals forces Physical Review B. 58: 13870-13873. DOI: 10.1103/Physrevb.58.13870 |
0.612 |
|
| 1998 |
Martel R, Schmidt T, Shea HR, Hertel T, Avouris P. Single- and multi-wall carbon nanotube field-effect transistors Applied Physics Letters. 73: 2447-2449. DOI: 10.1063/1.122477 |
0.641 |
|
| 1998 |
Hertel T, Martel R, Avouris P. Manipulation of Individual Carbon Nanotubes and Their Interaction with Surfaces Journal of Physical Chemistry B. 102: 910-915. DOI: 10.1021/Jp9734686 |
0.645 |
|
| 1998 |
Rochefort A, Salahub DR, Avouris P. The effect of structural distortions on the electronic structure of carbon nanotubes Chemical Physics Letters. 297: 45-50. DOI: 10.1016/S0009-2614(98)01105-1 |
0.386 |
|
| 1998 |
Avouris P, Martel R, Hertel T, Sandstrom R. Afm-Tip-Induced And Current-Induced Local Oxidation Of Silicon And Metals Applied Physics A. 66: 659-667. DOI: 10.1007/S003390051218 |
0.609 |
|
| 1997 |
Avouris P, Hertel T, Martel R. Atomic force microscope tip-induced local oxidation of silicon: kinetics, mechanism, and nanofabrication Applied Physics Letters. 71: 285-287. DOI: 10.1063/1.119521 |
0.61 |
|
| 1997 |
Persson BNJ, Avouris P. Local bond breaking via STM-induced excitations: the role of temperature Surface Science. 390: 45-54. DOI: 10.1016/S0039-6028(97)00507-4 |
0.319 |
|
| 1997 |
Shen T-, Avouris P. Electron stimulated desorption induced by the scanning tunneling microscope Surface Science. 390: 35-44. DOI: 10.1016/S0039-6028(97)00506-2 |
0.352 |
|
| 1997 |
Akpati H, Nordlander P, Lou L, Avouris P. The effects of an external electric field on the adatom-surface bond: H and Al adsorbed on Si(111) Surface Science. 372: 9-20. DOI: 10.1016/S0039-6028(96)01117-X |
0.33 |
|
| 1996 |
Martel R, Avouris P, Lyo I-. Molecularly Adsorbed Oxygen Species on Si(111)-(7×7): STM-Induced Dissociative Attachment Studies Science. 272: 385-388. DOI: 10.1126/Science.272.5260.385 |
0.315 |
|
| 1996 |
Avouris P, Walkup R, Rossi A, Akpati H, Nordlander P, Shen T, Abeln G, Lyding J. Breaking individual chemical bonds via STM-induced excitations Surface Science. 363: 368-377. DOI: 10.1016/0039-6028(96)00163-X |
0.356 |
|
| 1996 |
Hasegawa Y, Lyo I, Avouris P. Measurement of surface state conductance using STM point contacts Surface Science. 32-37. DOI: 10.1016/0039-6028(96)00052-0 |
0.32 |
|
| 1996 |
Lyding J, Shen T, Abeln G, Wang C, Scott P, Tucker J, Avouris P, Walkup R. Ultrahigh Vacuum Scanning Tunneling Microscope-Based Nanolithography and Selective Chemistry on Silicon Surfaces Israel Journal of Chemistry. 36: 3-10. DOI: 10.1002/Ijch.199600003 |
0.323 |
|
| 1995 |
Shen TC, Wang C, Abeln GC, Tucker JR, Lyding JW, Avouris P, Walkup RE. Atomic scale desorption through electronic and vibrational excitation mechanisms Science. 268: 1590-1592. PMID 17754609 DOI: 10.1126/Science.268.5217.1590 |
0.365 |
|
| 1995 |
Persson BNJ, Avouris P. The effects of the electric field in the STM on excitation localization. Implications for local bond breaking Chemical Physics Letters. 242: 483-489. DOI: 10.1016/0009-2614(95)00778-3 |
0.339 |
|
| 1995 |
Avouris P, Lyo I-, Molinàs-Mata P. STM studies of the interaction of surface state electrons on metals with steps and adsorbates Chemical Physics Letters. 240: 423-428. DOI: 10.1016/0009-2614(95)00577-Q |
0.345 |
|
| 1994 |
Avouris P, Lyo I. Observation of Quantum-Size Effects at Room Temperature on Metal Surfaces With STM. Science. 264: 942-945. PMID 17830080 DOI: 10.1126/Science.264.5161.942 |
0.347 |
|
| 1994 |
Hasegawa Y, Avouris P. Real Space Observation of Standing Waves at Metal Surfaces and the Determination of Surface State Dispersion with the Scanning Tunneling Microscope Japanese Journal of Applied Physics. 33: 3675-3678. DOI: 10.1143/Jjap.33.3675 |
0.302 |
|
| 1994 |
Avouris P, Lyo I‐, Walkup RE, Hasegawa Y. Real space imaging of electron scattering phenomena at metal surfaces Journal of Vacuum Science & Technology B. 12: 1447-1455. DOI: 10.1116/1.587314 |
0.318 |
|
| 1994 |
Hasegawa Y, Lyo I-, Avouris P. Electronic properties of nanometer-size metal-semiconductor point contacts studied by STM Applied Surface Science. 347-352. DOI: 10.1016/0169-4332(94)90366-2 |
0.342 |
|
| 1994 |
Avouris P. Studies of confined states and quantum size effects with scanning tunneling microscopy Solid State Communications. 92: 11-18. DOI: 10.1016/0038-1098(94)90853-2 |
0.358 |
|
| 1993 |
Walkup RE, Newns DM, Avouris P. Role of multiple inelastic transitions in atom transfer with the scanning tunneling microscope. Physical Review B. 48: 1858-1861. PMID 10008551 DOI: 10.1103/Physrevb.48.1858 |
0.326 |
|
| 1993 |
Avouris P, Lyo I‐, Hasegawa Y. Scanning tunneling microscope tip–sample interactions: Atomic modification of Si and nanometer Si Schottky diodes Journal of Vacuum Science and Technology. 11: 1725-1732. DOI: 10.1116/1.578486 |
0.35 |
|
| 1993 |
Walkup RE, Newns DM, Avouris P. Vibrational Heating and Atom Transfer with the STM Journal of Electron Spectroscopy and Related Phenomena. 523-532. DOI: 10.1016/0368-2048(93)80118-6 |
0.314 |
|
| 1992 |
Dujardin G, Walkup RE, Avouris P. Dissociation of individual molecules with electrons from the tip of a scanning tunneling microscope. Science. 255: 1232-1235. PMID 17816830 DOI: 10.1126/Science.255.5049.1232 |
0.327 |
|
| 1992 |
Cao R, Bozso F, Avouris P. Initial stage oxidation of the Ge:Si(111)-(5×5) and Ge:Si(111)-(7×7) surfaces Journal of Vacuum Science and Technology. 10: 2322-2326. DOI: 10.1116/1.577938 |
0.321 |
|
| 1992 |
Avouris P, Lyo I-. Probing the chemistry and manipulating surfaces at the atomic scale with the STM Applied Surface Science. 426-436. DOI: 10.1016/0169-4332(92)90455-7 |
0.318 |
|
| 1991 |
Lyo I, Avouris P. Field-Induced Nanometer- to Atomic-Scale Manipulation of Silicon Surfaces with the STM Science. 253: 173-176. PMID 17779133 DOI: 10.1126/Science.253.5016.173 |
0.329 |
|
| 1991 |
Bozso F, Avouris P. Adsorption of phosphorus on Si(111): Structure and chemical reactivity. Physical Review B. 43: 1847-1850. PMID 9997448 DOI: 10.1103/Physrevb.43.1847 |
0.316 |
|
| 1991 |
Avouris P, Lyo I. Probing and inducing surface chemistry with the STM: the reactions of Si(111)-7 × 7 with H2O and O2 Surface Science. 242: 1-11. DOI: 10.1016/0167-2584(91)90414-M |
0.316 |
|
| 1990 |
Avouris P, Lyo I, Bozso F, Kaxiras E. Adsorption of boron on Si(111): Physics, chemistry, and atomic‐scale electronic devices Journal of Vacuum Science and Technology. 8: 3405-3411. DOI: 10.1116/1.576522 |
0.312 |
|
| 1990 |
Lyo IW, Avouris P, Schubert B, Hoffmann R. Elucidation of the initial stages of the oxidation of silicon (111) using scanning tunneling microscopy and spectroscopy The Journal of Physical Chemistry. 94: 4400-4403. DOI: 10.1021/J100374A009 |
0.302 |
|
| 1990 |
Avouris P. Atom-resolved surface chemistry using the scanning tunneling microscope The Journal of Physical Chemistry. 94: 2246-2256. DOI: 10.1021/J100369A011 |
0.343 |
|
| 1989 |
Lyo I, Avouris P. Negative Differential Resistance on the Atomic Scale: Implications for Atomic Scale Devices Science. 245: 1369-1371. PMID 17798744 DOI: 10.1126/Science.245.4924.1369 |
0.329 |
|
| 1989 |
Bozso F, Avouris P. Electronic Excitation-Induced Surface Chemistry and Electron-Beam-Assisted Chemical Vapor Deposition Mrs Proceedings. 158. DOI: 10.1557/Proc-158-201 |
0.331 |
|
| 1989 |
Avouris P, Wolkow R. Atom-resolved surface chemistry studied by scanning tunneling microscopy and spectroscopy Physical Review B. 39: 5091-5100. DOI: 10.1103/Physrevb.39.5091 |
0.309 |
|
| 1989 |
Avouris P, Wolkow R. Scanning tunneling microscopy of insulators: CaF2 epitaxy on Si (111) Applied Physics Letters. 55: 1074-1076. DOI: 10.1063/1.102457 |
0.308 |
|
| 1988 |
Gumhalter B, Wandelt K, Avouris P. 2π /emph> resonance features in the electronic spectra of chemisorbed CO Physical Review B. 37: 8048-8065. PMID 9944136 DOI: 10.1103/Physrevb.37.8048 |
0.323 |
|
| 1988 |
Avouris P, Wolkow R. Studies of Si Surface Chemistry and Epitaxy Using Scanning Tunneling Microscopy and Spectroscopy Mrs Proceedings. 131. DOI: 10.1557/Proc-131-157 |
0.314 |
|
| 1988 |
Hamers RJ, Avouris P, Bozso F. A scanning tunneling microscopy study of the reaction of Si(001)‐(2×1) with NH3 Journal of Vacuum Science and Technology. 6: 508-511. DOI: 10.1116/1.575369 |
0.328 |
|
| 1988 |
Wolkow R, Avouris P. Scanning tunnelling microscopy studies of heteroepitaxy: CaF2 on Si(111) Journal of Microscopy. 152: 167-173. DOI: 10.1111/J.1365-2818.1988.Tb01375.X |
0.318 |
|
| 1988 |
Wolkow R, Avouris P. Atom-resolved surface chemistry using scanning tunneling microscopy Physical Review Letters. 60: 1049-1052. DOI: 10.1103/Physrevlett.60.1049 |
0.329 |
|
| 1987 |
Avouris P, Wolkow R, Bozso F, Hamers RJ. Scanning Tunneling Microscopy Studies of the Initial Stages of Thin Film Growth: the Role of the Surface Dangling Bonds Mrs Proceedings. 105. DOI: 10.1557/Proc-105-35 |
0.31 |
|
| 1987 |
Walkup RE, Avouris P, Ghosh AP. Excited-atom production by electron and ion bombardment of alkali halides Journal of Vacuum Science & Technology B. 5: 1423-1426. DOI: 10.1116/1.583628 |
0.34 |
|
| 1987 |
Nordlander P, Avouris P. Summary Abstract: Anderson–Hamiltonian model of adsorbate inverse and direct photoemission and electronic excitation spectroscopies Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 5: 1099-1100. DOI: 10.1116/1.574804 |
0.327 |
|
| 1987 |
Avouris P. On the Nature and Spectroscopy of the Affinity Levels of Adsorbates on Metals Physica Scripta. 35: 47-51. DOI: 10.1088/0031-8949/35/1/011 |
0.336 |
|
| 1987 |
Avouris P, Bozso F, Walkup RE. Desorption via electronic transitions: Fundamental mechanisms and applications Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 27: 136-146. DOI: 10.1016/0168-583X(87)90014-0 |
0.349 |
|
| 1986 |
Walkup RE, Avouris P, Ghosh AP. Excited-atom production by electron bombardment of alkali halides. Physical Review Letters. 57: 2227-2230. PMID 10033668 DOI: 10.1103/Physrevlett.57.2227 |
0.313 |
|
| 1986 |
Walkup RE, Avouris P, Ghosh AP. Excited-Atom Production by Electron Bombardment of Alkali-Halides Mrs Proceedings. 75: 599. DOI: 10.1557/Proc-75-599 |
0.313 |
|
| 1986 |
Avouris P, Bagus PS, Nelin CJ. Unfilled levels and excited states of adsorbates on metal surfaces Journal of Electron Spectroscopy and Related Phenomena. 38: 269-287. DOI: 10.1016/0368-2048(86)85098-8 |
0.328 |
|
| 1986 |
Beigang R, Bozso F, Avouris P, Walkup R. Electron stimulated desorption of excited OH radicals from SrF2 surfaces Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 13: 541-544. DOI: 10.1016/0168-583X(86)90562-8 |
0.314 |
|
| 1985 |
DiNardo NJ, Demuth JE, Thompson WA, Avouris P. Temperature-dependent electronic excitations of the Si(111)2 x 1 surface. Physical Review. B, Condensed Matter. 31: 4077-4079. PMID 9936326 DOI: 10.1103/Physrevb.31.4077 |
0.311 |
|
| 1985 |
Avouris P, Bagus PS, Rossi AR. Excitation and ionization at surfaces: CO on metals Journal of Vacuum Science & Technology B. 3: 1484-1489. DOI: 10.1116/1.582972 |
0.313 |
|
| 1985 |
Walkup R, Avouris P. Summary Abstract: Energy distributions of electronically excited molecules produced by ion bombardment of silicon Journal of Vacuum Science and Technology. 3: 1662-1662. DOI: 10.1116/1.573033 |
0.306 |
|
| 1985 |
Walkup R, Avouris P. Energy distributions of electronically excited molecules produced by ion bombardment of silicon Surface Science. 157: 193-207. DOI: 10.1016/0167-2584(85)91085-0 |
0.321 |
|
| 1985 |
Avouris P, Demuth JE. Valence and core excitations of adsorbates on metal surfaces Surface Science. 158: 21-39. DOI: 10.1016/0039-6028(85)90286-9 |
0.347 |
|
| 1985 |
Bagus PS, Hermann K, Avouris P, Rossi AR, Prince KC. Chemical bonding effects in the inverse photoemission spectra of chemisorbed CO Chemical Physics Letters. 118: 311-315. DOI: 10.1016/0009-2614(85)85322-7 |
0.31 |
|
| 1984 |
DiNardo NJ, Demuth JE, Avouris PH. Summary Abstract: Molecular orientation effects on the electronic excitations of chemisorbed pyridine on Ni(001) Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 2: 1015-1016. DOI: 10.1116/1.572647 |
0.309 |
|
| 1984 |
DiNardo NJ, Avouris P, Demuth JE. Chemisorbed pyridine on Ni(001): A high resolution electron energy loss study of vibrational and electronic excitations Journal of Chemical Physics. 81: 2169-2180. DOI: 10.1063/1.447842 |
0.328 |
|
| 1984 |
Avouris P, DiNardo NJ, Demuth JE. Electronically excited states of chemisorbed molecules Journal of Chemical Physics. 80: 491-502. DOI: 10.1063/1.446420 |
0.363 |
|
| 1984 |
Avouris P, Persson BNJ. Excited states at metal surfaces and their non-radiative relaxation The Journal of Physical Chemistry. 88: 837-848. DOI: 10.1021/J150649A004 |
0.369 |
|
| 1983 |
Persson BNJ, Avouris P. On the nature and decay of electronically excited states at metal surfaces Journal of Chemical Physics. 79: 5156-5162. DOI: 10.1063/1.445642 |
0.353 |
|
| 1983 |
Avouris P, Schmeisser D, Demuth JE. Nonradiative relaxation of electronically excited N2 on Al(111). Comparison with nonlocal optical theory Journal of Chemical Physics. 79: 488-492. DOI: 10.1063/1.445548 |
0.319 |
|
| 1983 |
Tsang JC, Avouris P, Kirtley JR. Raman spectroscopy of molecular monolayers without giant field enhancements Journal of Chemical Physics. 79: 493-501. DOI: 10.1063/1.445521 |
0.353 |
|
| 1983 |
Tsang JC, Avouris P, Kirtley JR. Multichannel Raman spectroscopy of molecules on evaporated metal films Chemical Physics Letters. 94: 172-174. DOI: 10.1016/0009-2614(83)87567-8 |
0.311 |
|
| 1982 |
Schmeisser D, Demuth JE, Avouris P. Electron-energy-loss studies of physisorbed O 2 and N 2 on Ag and Cu surfaces Physical Review B. 26: 4857-4863. DOI: 10.1103/Physrevb.26.4857 |
0.322 |
|
| 1982 |
Avouris P, Demuth JE, Schmeisser D, Colson SD. An electron energy loss study of the triplet states of SO2 The Journal of Chemical Physics. 77: 1062-1063. DOI: 10.1063/1.443918 |
0.302 |
|
| 1982 |
Schmeisser D, Demuth JE, Avouris P. Metal—Molecule charge-transfer excitations on silver films Chemical Physics Letters. 87: 324-326. DOI: 10.1016/0009-2614(82)83595-1 |
0.317 |
|
| 1981 |
Avouris P, Demuth JE. Electronic excitations of benzene, pyridine, and pyrazine adsorbed on Ag(111) Journal of Chemical Physics. 75: 4783-4794. DOI: 10.1063/1.441914 |
0.352 |
|
| 1981 |
Avouris P, Morgan TN. A tunneling model for the decay of luminescence in inorganic phosphors: The case of Zn2SiO4:Mn Journal of Chemical Physics. 74: 4347-4355. DOI: 10.1063/1.441677 |
0.318 |
|
| 1981 |
Avouris P, Rossi AR, Albrecht AC. Electronic band-shape calculations in ammonia The Journal of Chemical Physics. 74: 5516-5520. DOI: 10.1063/1.440958 |
0.334 |
|
| 1981 |
Avouris P, Chang IF, Dove D, Morgan TN, Thefaine Y. Trapping and luminescence mechanisms in manganese-doped zinc silicate phosphorsa tunneling model Journal of Electronic Materials. 10: 887-899. DOI: 10.1007/Bf02661006 |
0.327 |
|
| 1976 |
Avouris P, Yang LL, El-Bayoumi MA. EXCITED STATE INTERACTIONS OF 7-AZAINDOLE WITH ALCOHOL AND WATER Photochemistry and Photobiology. 24: 211-216. DOI: 10.1111/j.1751-1097.1976.tb06813.x |
0.596 |
|
| 1975 |
Kordas J, Avouris P, El-Bayoumi MA. Effect of temperature on the oscillator strength of a nonrigid molecule Journal of Physical Chemistry. 79: 2420-2423. DOI: 10.1021/J100589A015 |
0.625 |
|
| 1975 |
El-Bayoumi MA, Avouris P. Dynamics Of Double Proton Transfer In The Excited State Of 7-Azaindole Hydrogen Bonded Dimer, A Time-Resolved Fluorescence Study Cheminform. 6. DOI: 10.1002/Chin.197525054 |
0.637 |
|
| 1974 |
Avouris P, Kordas J, El-Bayoumi MA. Time-resolved fluorescence study of intramolecular excimer interaction in dinaphthylpropane Chemical Physics Letters. 26: 373-376. DOI: 10.1016/0009-2614(74)89052-4 |
0.607 |
|
| 1974 |
Tournon J, Abu-Elgheit M, Avouris P, El-Bayoumi MA. Intramolecular interactions and luminescence properties of rigid and non-rigid phenylalkylcarboxylic acids Chemical Physics Letters. 28: 430-432. DOI: 10.1016/0009-2614(74)80383-0 |
0.593 |
|
| 1973 |
Avouris P, El-Bayoumi MA. Intramolecular triplet excimer formation in 1,3-diphenylpropane Chemical Physics Letters. 20: 59-62. DOI: 10.1016/0009-2614(73)85217-0 |
0.608 |
|
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