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Evgueni A. Chagarov, Ph.D. - Publications

Affiliations: 
2003 Arizona State University, Tempe, AZ, United States 
Area:
Materials Science Engineering, Condensed Matter Physics
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32 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2020 Chae K, Hwang J, Chagarov E, Kummel A, Cho K. Stability of ferroelectric and antiferroelectric hafnium–zirconium oxide thin films Journal of Applied Physics. 128: 54101. DOI: 10.1063/5.0011547  0.315
2018 Kavrik MS, Thomson E, Chagarov E, Tang K, Ueda ST, Hou V, Aoki T, Kim MJ, Fruhberger B, Taur Y, McIntyre PC, Kummel AC. Ultra-Low defect density at sub-0.5 nm HfO2/SiGe interfaces via selective oxygen scavenging. Acs Applied Materials & Interfaces. PMID 30073827 DOI: 10.1021/Acsami.8B06547  0.448
2018 Chagarov EA, Kavrik MS, Fang Z, Tsai W, Kummel AC. Density-functional theory molecular dynamics simulations of a-HfO2/a-SiO2/SiGe and a-HfO2/a-SiO2/Ge with a-SiO2 and a-SiO suboxide interfacial layers Applied Surface Science. 443: 644-654. DOI: 10.1016/J.Apsusc.2018.02.041  0.474
2017 Sardashti K, Chagarov E, Antunez PD, Gershon TS, Ueda ST, Gokmen T, Bishop D, Haight R, Kummel AC. Nanoscale Characterization of Back Surfaces and Interfaces in Thin-Film Kesterite Solar Cells. Acs Applied Materials & Interfaces. PMID 28452464 DOI: 10.1021/Acsami.7B01838  0.459
2017 Edmonds M, Sardashti K, Wolf S, Chagarov E, Clemons M, Kent T, Park JH, Tang K, McIntyre PC, Yoshida N, Dong L, Holmes R, Alvarez D, Kummel AC. Low temperature thermal ALD of a SiNx interfacial diffusion barrier and interface passivation layer on SixGe1- x(001) and SixGe1- x(110). The Journal of Chemical Physics. 146: 052820. PMID 28178835 DOI: 10.1063/1.4975081  0.47
2017 Edmonds M, Wolf S, Chagarov E, Kent T, Park JH, Holmes R, Alvarez D, Droopad R, Kummel AC. Self-limiting CVD of a passivating SiO x control layer on InGaAs(001)-(2x4) with the prevention of III-V oxidation Surface Science. 660: 31-38. DOI: 10.1016/J.Susc.2017.02.006  0.456
2016 Chagarov E, Sardashti K, Kummel AC, Lee YS, Haight R, Gershon TS. Ag2ZnSn(S,Se)4: A highly promising absorber for thin film photovoltaics. The Journal of Chemical Physics. 144: 104704. PMID 26979701 DOI: 10.1063/1.4943270  0.326
2016 Chagarov E, Sardashti K, Haight R, Mitzi DB, Kummel AC. Density-functional theory computer simulations of CZTS0.25Se0.75 alloy phase diagrams Journal of Chemical Physics. 145. DOI: 10.1063/1.4959591  0.324
2016 Chagarov EA, Porter L, Kummel AC. Density-functional theory molecular dynamics simulations of a-HfO2/Ge(100)(2 × 1) and a-ZrO2/Ge(100)(2 × 1) interface passivation Journal of Chemical Physics. 144. DOI: 10.1063/1.4941947  0.515
2015 Chagarov E, Sardashti K, Kaufman-Osborn T, Madisetti S, Oktyabrsky S, Sahu B, Kummel A. Density-Functional Theory Molecular Dynamics Simulations and Experimental Characterization of a-Al₂O₃/SiGe Interfaces. Acs Applied Materials & Interfaces. 7: 26275-83. PMID 26575590 DOI: 10.1021/Acsami.5B08727  0.482
2015 Edmonds M, Kent T, Chagarov E, Sardashti K, Droopad R, Chang M, Kachian J, Park JH, Kummel A. Passivation of InGaAs(001)-(2 × 4) by Self-Limiting Chemical Vapor Deposition of a Silicon Hydride Control Layer. Journal of the American Chemical Society. 137: 8526-33. PMID 26070022 DOI: 10.1021/Jacs.5B03660  0.474
2015 Park SW, Kim H, Chagarov E, Siddiqui S, Sahu B, Yoshida N, Kachian J, Feenstra R, Kummel AC. Chemically selective formation of Si-O-Al on SiGe(110) and (001) for ALD nucleation using H2O2(g) Surface Science. DOI: 10.1016/J.Susc.2016.01.009  0.486
2014 Kerr AJ, Chagarov E, Gu S, Kaufman-Osborn T, Madisetti S, Wu J, Asbeck PM, Oktyabrsky S, Kummel AC. Preparation of gallium nitride surfaces for atomic layer deposition of aluminum oxide. The Journal of Chemical Physics. 141: 104702. PMID 25217942 DOI: 10.1063/1.4894541  0.498
2014 Kaufman-Osborn T, Chagarov EA, Kummel AC. Atomic imaging and modeling of H2O2(g) surface passivation, functionalization, and atomic layer deposition nucleation on the Ge(100) surface. The Journal of Chemical Physics. 140: 204708. PMID 24880312 DOI: 10.1063/1.4878496  0.49
2014 Kaufman-Osborn T, Chagarov EA, Park SW, Sahu B, Siddiqui S, Kummel AC. Atomic imaging and modeling of passivation, functionalization, and atomic layer deposition nucleation of the SiGe(001) surface via H2O2(g) and trimethylaluminum dosing Surface Science. 630: 273-279. DOI: 10.1016/J.Susc.2014.08.027  0.521
2014 Gu S, Chagarov EA, Min J, Madisetti S, Novak S, Oktyabrsky S, Kerr AJ, Kaufman-Osborn T, Kummel AC, Asbeck PM. Characterization of interface and border traps in ALD Al2O3/GaN MOS capacitors with two-step surface pretreatments on Ga-polar GaN Applied Surface Science. 317: 1022-1027. DOI: 10.1016/J.Apsusc.2014.09.028  0.505
2013 Kent TJ, Edmonds M, Chagarov E, Droopad R, Kummel AC. Dual passivation of GaAs (110) surfaces using O2/H2O and trimethylaluminum. The Journal of Chemical Physics. 139: 244706. PMID 24387387 DOI: 10.1063/1.4852155  0.494
2013 Ahn J, Kent T, Chagarov E, Tang K, Kummel AC, McIntyre PC. Arsenic decapping and pre-atomic layer deposition trimethylaluminum passivation of Al2O3/InGaAs(100) interfaces Applied Physics Letters. 103. DOI: 10.1063/1.4818330  0.493
2012 Melitz W, Clemens JB, Shen J, Chagarov EA, Lee S, Lee JS, Royer JE, Holland M, Bentley S, McIntyre D, Thayne I, Droopad R, Kummel AC. Scanning probe microscopy imaging before and after atomic layer oxide deposition on a compound semiconductor surface Solid State Phenomena. 187: 9-10. DOI: 10.4028/Www.Scientific.Net/Ssp.187.9  0.369
2011 Chagarov EA, Kummel AC. Density functional theory simulations of amorphous high-κ oxides on a compound semiconductor alloy: a-Al2O3/InGaAs(100)-(4×2), a-HfO2/InGaAs(100)-(4×2), and a-ZrO2/InGaAs(100)-(4×2). The Journal of Chemical Physics. 135: 244705. PMID 22225179 DOI: 10.1063/1.3657439  0.489
2010 Bishop SR, Clemens JB, Chagarov EA, Shen J, Kummel AC. Theoretical analysis of initial adsorption of high-κ metal oxides on In(x)Ga(1-x)As(0 0 1)-(4×2) surfaces. The Journal of Chemical Physics. 133: 194702. PMID 21090868 DOI: 10.1063/1.3501371  0.427
2010 Shen J, Chagarov EA, Feldwinn DL, Melitz W, Santagata NM, Kummel AC, Droopad R, Passlack M. Scanning tunneling microscopy/spectroscopy study of atomic and electronic structures of In2O on InAs and In0.53Ga0.47As(001)-(4×2) surfaces. The Journal of Chemical Physics. 133: 164704. PMID 21033816 DOI: 10.1063/1.3497040  0.469
2010 Clemens JB, Chagarov EA, Holland M, Droopad R, Shen J, Kummel AC. Atomic imaging of the monolayer nucleation and unpinning of a compound semiconductor surface during atomic layer deposition. The Journal of Chemical Physics. 133: 154704. PMID 20969416 DOI: 10.1063/1.3487737  0.481
2010 Shen J, Clemens JB, Chagarov EA, Feldwinn DL, Melitz W, Song T, Bishop SR, Kummel AC, Droopad R. Structural and electronic properties of group III rich In 0.53Ga0.47As(001) Surface Science. 604: 1757-1766. DOI: 10.1016/J.Susc.2010.07.001  0.414
2009 Chagarov EA, Kummel AC. Ab initio molecular dynamics simulations of properties of a-Al2O3/vacuum and a-ZrO2/vacuum vs a-Al2O3Ge(100)(2 x 1) and a-ZrO2Ge(100)(2 x 1) interfaces. The Journal of Chemical Physics. 130: 124717. PMID 19334882 DOI: 10.1063/1.3078035  0.448
2009 Houssa M, Chagarov E, Kummel A. Surface defects and passivation of Ge and III-V interfaces Mrs Bulletin. 34: 504-513. DOI: 10.1557/Mrs2009.138  0.39
2009 Kim EJ, Chagarov E, Cagnon J, Yuan Y, Kummel AC, Asbeck PM, Stemmer S, Saraswat KC, McIntyre PC. Atomically abrupt and unpinned Al2O3/In 0.53Ga0.47 As interfaces: Experiment and simulation Journal of Applied Physics. 106. DOI: 10.1063/1.3266006  0.471
2009 Chagarov EA, Kummel AC. Molecular dynamics simulation comparison of atomic scale intermixing at the amorphous Al2O3/semiconductor interface for a-Al2O3/Ge, a-Al2O3/InGaAs, and a-Al2O3/InAlAs/InGaAs Surface Science. 603: 3191-3200. DOI: 10.1016/J.Susc.2009.08.009  0.44
2008 Chagarov EA, Kummel AC. Formation mechanisms of polar and non-polar amorphous oxide-semiconductor interfaces Surface Science. 602: L74-L78. DOI: 10.1016/J.Susc.2008.04.026  0.445
2005 Chagarov E, Demkov AA, Adams JB. Ab initio calculations of surface phase diagrams of silica polymorphs Physical Review B - Condensed Matter and Materials Physics. 71. DOI: 10.1103/Physrevb.71.075417  0.563
2004 Chagarov E, Adams JB, Kieffer J. Application of design of experiments methodology to optimization of classical molecular dynamics generation of amorphous SiO2 structure Modelling and Simulation in Materials Science and Engineering. 12: 337-356. DOI: 10.1088/0965-0393/12/2/013  0.497
2003 Chagarov E, Adams JB. Molecular dynamics simulations of mechanical deformation of amorphous silicon dioxide during chemical-mechanical polishing Journal of Applied Physics. 94: 3853-3861. DOI: 10.1063/1.1602551  0.501
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