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Michael J. Aziz - Publications

Affiliations: 
Materials science and engineering Harvard University, Cambridge, MA, United States 
Area:
Materials and Energy Technologies
Website:
https://seas.harvard.edu/person/michael-aziz
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Year Citation  Score
2023 Alfaraidi AM, Kudisch B, Ni N, Thomas J, George TY, Rajabimoghadam K, Jiang HJ, Nocera DG, Aziz MJ, Liu RY. Reversible CO Capture and On-Demand Release by an Acidity-Matched Organic Photoswitch. Journal of the American Chemical Society. PMID 38051161 DOI: 10.1021/jacs.3c08471  0.396
2022 Jing Y, Zhao EW, Goulet MA, Bahari M, Fell EM, Jin S, Davoodi A, Jónsson E, Wu M, Grey CP, Gordon RG, Aziz MJ. In situ electrochemical recomposition of decomposed redox-active species in aqueous organic flow batteries. Nature Chemistry. PMID 35710986 DOI: 10.1038/s41557-022-00967-4  0.444
2022 Jin S, Wu M, Jing Y, Gordon RG, Aziz MJ. Low energy carbon capture via electrochemically induced pH swing with electrochemical rebalancing. Nature Communications. 13: 2140. PMID 35440649 DOI: 10.1038/s41467-022-29791-7  0.452
2021 Goulet MA, Tong L, Pollack DA, Tabor DP, Odom SA, Aspuru-Guzik A, Kwan EE, Gordon RG, Aziz MJ. Correction to "Extending the Lifetime of Organic Flow Batteries via Redox State Management". Journal of the American Chemical Society. PMID 34406739 DOI: 10.1021/jacs.1c05529  0.541
2020 Li Y, Xu Z, Liu Y, Jin S, Fell EM, Wang B, Gordon RG, Aziz MJ, Yang Z, Xu T. Functioning water-insoluble ferrocenes for aqueous organic flow battery via host-guest inclusion. Chemsuschem. PMID 33295127 DOI: 10.1002/cssc.202002516  0.41
2020 Gandhi HH, Pastor D, Tran TT, Kalchmair S, Smillie LA, Mailoa JP, Milazzo R, Napolitani E, Loncar M, Williams JS, Aziz MJ, Mazur E. Chalcogen-hyperdoped germanium for short-wavelength infrared photodetection Aip Advances. 10: 75028. DOI: 10.1063/5.0008281  0.346
2020 Jing Y, Wu M, Wong AA, Fell EM, Jin S, Pollack DA, Kerr EF, Gordon RG, Aziz MJ. In situ electrosynthesis of anthraquinone electrolytes in aqueous flow batteries Green Chemistry. 22: 6084-6092. DOI: 10.1039/D0Gc02236E  0.488
2020 Jin S, Wu M, Gordon RG, Aziz MJ, Kwabi DG. pH swing cycle for CO2 capture electrochemically driven through proton-coupled electron transfer Energy & Environmental Science. 13: 3706-3722. DOI: 10.1039/D0Ee01834A  0.461
2020 Wu M, Jing Y, Wong AA, Fell EM, Jin S, Tang Z, Gordon RG, Aziz MJ. Extremely Stable Anthraquinone Negolytes Synthesized from Common Precursors Chem. 6: 1432-1442. DOI: 10.1016/J.Chempr.2020.03.021  0.485
2020 Jin S, Fell EM, Vina‐Lopez L, Jing Y, Michalak PW, Gordon RG, Aziz MJ. Near Neutral pH Redox Flow Battery with Low Permeability and Long‐Lifetime Phosphonated Viologen Active Species Advanced Energy Materials. 10: 2000100. DOI: 10.1002/Aenm.202000100  0.467
2019 Goulet MA, Tong L, Pollack DA, Tabor DP, Kwan EE, Aspuru-Guzik A, Gordon RG, Aziz MJ. Extending the Lifetime of Organic Flow Batteries via Redox State Management. Journal of the American Chemical Society. PMID 30945536 DOI: 10.1021/Jacs.8B13295  0.619
2019 Yang W, Hudspeth Q, Chow PK, Warrender JM, Ferdous N, Ertekin E, Malladi G, Akey AJ, Aziz MJ, Williams JS. Atomistic Mechanisms for the Thermal Relaxation of Au -hyperdoped Si Physical Review Applied. 12. DOI: 10.1103/Physrevapplied.12.024015  0.671
2019 Yang W, Ferdous N, Simpson PJ, Gaudet JM, Hudspeth Q, Chow PK, Warrender JM, Akey AJ, Aziz MJ, Ertekin E, Williams JS. Evidence for vacancy trapping in Au-hyperdoped Si following pulsed laser melting Apl Materials. 7: 101124. DOI: 10.1063/1.5124709  0.719
2019 Norris SA, Aziz MJ. Ion-induced nanopatterning of silicon: Toward a predictive model Applied Physics Reviews. 6: 11311. DOI: 10.1063/1.5043438  0.337
2019 Crespilho FN, Sedenho GC, De Porcellinis D, Kerr E, Granados-Focil S, Gordon RG, Aziz MJ. Non-corrosive, low-toxicity gel-based microbattery from organic and organometallic molecules Journal of Materials Chemistry A. 7: 24784-24787. DOI: 10.1039/C9Ta08685D  0.443
2019 Tabor DP, Gómez-Bombarelli R, Tong L, Gordon RG, Aziz MJ, Aspuru-Guzik A. Mapping the frontiers of quinone stability in aqueous media: implications for organic aqueous redox flow batteries Journal of Materials Chemistry A. 7: 12833-12841. DOI: 10.1039/C9Ta03219C  0.598
2019 Tong L, Goulet M, Tabor DP, Kerr EF, De Porcellinis D, Fell EM, Aspuru-Guzik A, Gordon RG, Aziz MJ. Molecular Engineering of an Alkaline Naphthoquinone Flow Battery Acs Energy Letters. 4: 1880-1887. DOI: 10.1021/Acsenergylett.9B01321  0.608
2019 Jin S, Jing Y, Kwabi DG, Ji Y, Tong L, De Porcellinis D, Goulet M, Pollack DA, Gordon RG, Aziz MJ. A Water-Miscible Quinone Flow Battery with High Volumetric Capacity and Energy Density Acs Energy Letters. 4: 1342-1348. DOI: 10.1021/Acsenergylett.9B00739  0.475
2019 Liu Y, Goulet M, Tong L, Liu Y, Ji Y, Wu L, Gordon RG, Aziz MJ, Yang Z, Xu T. A Long-Lifetime All-Organic Aqueous Flow Battery Utilizing TMAP-TEMPO Radical Chem. 5: 1861-1870. DOI: 10.1016/J.Chempr.2019.04.021  0.496
2019 Li W, Kerr E, Goulet M, Fu H, Zhao Y, Yang Y, Veyssal A, He J, Gordon RG, Aziz MJ, Jin S. A Long Lifetime Aqueous Organic Solar Flow Battery Advanced Energy Materials. 9: 1900918. DOI: 10.1002/Aenm.201900918  0.477
2019 Park M, Beh ES, Fell EM, Jing Y, Kerr EF, Porcellinis DD, Goulet M, Ryu J, Wong AA, Gordon RG, Cho J, Aziz MJ. A High Voltage Aqueous Zinc–Organic Hybrid Flow Battery Advanced Energy Materials. 9: 1900694. DOI: 10.1002/Aenm.201900694  0.478
2019 Ji Y, Goulet M, Pollack DA, Kwabi DG, Jin S, Porcellinis DD, Kerr EF, Gordon RG, Aziz MJ. A Phosphonate‐Functionalized Quinone Redox Flow Battery at Near‐Neutral pH with Record Capacity Retention Rate Advanced Energy Materials. 9: 1900039. DOI: 10.1002/Aenm.201900039  0.461
2018 Perkinson JC, Swenson JM, DeMasi A, Wagenbach C, Ludwig KF, Norris SA, Aziz MJ. Sawtooth structure formation under nonlinear-regime ion bombardment. Journal of Physics. Condensed Matter : An Institute of Physics Journal. PMID 29757159 DOI: 10.1088/1361-648X/Aac460  0.316
2018 Pastor D, Gandhi HH, Monmeyran CP, Akey AJ, Milazzo R, Cai Y, Napolitani E, Gwilliam RM, Crowe IF, Michel J, Kimerling LC, Agarwal A, Mazur E, Aziz MJ. High level activen+doping of strained germanium through co-implantation and nanosecond pulsed laser melting Journal of Applied Physics. 123: 165101. DOI: 10.1063/1.5012512  0.318
2018 Kwabi DG, Lin K, Ji Y, Kerr EF, Goulet M, Porcellinis DD, Tabor DP, Pollack DA, Aspuru-Guzik A, Gordon RG, Aziz MJ. Alkaline Quinone Flow Battery with Long Lifetime at pH 12 Joule. 2: 1894-1906. DOI: 10.1016/J.Joule.2018.07.005  0.6
2018 Yang Z, Tong L, Tabor DP, Beh ES, Goulet M, De Porcellinis D, Aspuru-Guzik A, Gordon RG, Aziz MJ. Flow Batteries: Alkaline Benzoquinone Aqueous Flow Battery for Large-Scale Storage of Electrical Energy (Adv. Energy Mater. 8/2018) Advanced Energy Materials. 8: 1870034. DOI: 10.1002/Aenm.201870034  0.606
2017 Tong L, Chen Q, Wong AA, Gómez-Bombarelli R, Aspuru-Guzik A, Gordon RG, Aziz MJ. UV-Vis spectrophotometry of quinone flow battery electrolyte for in situ monitoring and improved electrochemical modeling of potential and quinhydrone formation. Physical Chemistry Chemical Physics : Pccp. PMID 29165500 DOI: 10.1039/C7Cp05881K  0.631
2017 Norris SA, Perkinson JC, Mokhtarzadeh M, Anzenberg E, Aziz MJ, Ludwig KF. Distinguishing physical mechanisms using GISAXS experiments and linear theory: the importance of high wavenumbers. Scientific Reports. 7: 2016. PMID 28515475 DOI: 10.1038/S41598-017-01059-X  0.328
2017 Beh E, Porcellinis DD, Gracia RL, Xia K, Gordon RG, Aziz MJ. A Neutral pH Aqueous Organic–Organometallic Redox Flow Battery with Extremely High Capacity Retention Acs Energy Letters. 2: 639-644. DOI: 10.1021/Acsenergylett.7B00019  0.503
2017 Tran TT, Gandhi HH, Pastor D, Aziz MJ, Williams JS. Ion-beam synthesis and thermal stability of highly tin-concentrated germanium – tin alloys Materials Science in Semiconductor Processing. 62: 192-195. DOI: 10.1016/J.Mssp.2016.10.049  0.37
2017 Yang Z, Tong L, Tabor DP, Beh ES, Goulet M, De Porcellinis D, Aspuru-Guzik A, Gordon RG, Aziz MJ. Alkaline Benzoquinone Aqueous Flow Battery for Large-Scale Storage of Electrical Energy Advanced Energy Materials. 8: 1702056. DOI: 10.1002/Aenm.201702056  0.491
2016 Gerhardt MR, Beh ES, Tong L, Gordon RG, Aziz MJ. Comparison of Capacity Retention Rates During Cycling of Quinone-Bromide Flow Batteries Mrs Advances. 2: 431-438. DOI: 10.1557/Adv.2016.667  0.489
2016 Tran TT, Alkhaldi HS, Gandhi HH, Pastor D, Huston LQ, Wong-Leung J, Aziz MJ, Williams JS. Suppression of ion-implantation induced porosity in germanium by a silicon dioxide capping layer Applied Physics Letters. 109. DOI: 10.1063/1.4961620  0.39
2016 Hutchinson D, Mathews J, Sullivan JT, Akey A, Aziz MJ, Buonassisi T, Persans P, Warrender JM. Effect of layer thickness on device response of silicon heavily supersaturated with sulfur Aip Advances. 6. DOI: 10.1063/1.4948986  0.696
2016 Tran TT, Pastor D, Gandhi HH, Smillie LA, Akey AJ, Aziz MJ, Williams JS. Synthesis of Ge1-xSnx alloys by ion implantation and pulsed laser melting: Towards a group IV direct bandgap material Journal of Applied Physics. 119. DOI: 10.1063/1.4948960  0.364
2016 Lin K, Gómez-Bombarelli R, Beh ES, Tong L, Chen Q, Valle A, Aspuru-Guzik A, Aziz MJ, Gordon RG. A redox-flow battery with an alloxazine-based organic electrolyte Nature Energy. 1. DOI: 10.1038/Nenergy.2016.102  0.598
2016 Gerhardt MR, Tong L, Gómez-Bombarelli R, Chen Q, Marshak MP, Galvin CJ, Aspuru-Guzik A, Gordon RG, Aziz MJ. Anthraquinone Derivatives in Aqueous Flow Batteries Advanced Energy Materials. 7: 1601488. DOI: 10.1002/Aenm.201601488  0.779
2015 Lin K, Chen Q, Gerhardt MR, Tong L, Kim SB, Eisenach L, Valle AW, Hardee D, Gordon RG, Aziz MJ, Marshak MP. Alkaline quinone flow battery. Science (New York, N.Y.). 349: 1529-32. PMID 26404834 DOI: 10.1126/Science.Aab3033  0.763
2015 Franta B, Pastor D, Gandhi HH, Rekemeyer PH, Gradečak S, Aziz MJ, Mazur E. Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing Journal of Applied Physics. 118. DOI: 10.1063/1.4937149  0.334
2015 Akey AJ, Recht D, Williams JS, Aziz MJ, Buonassisi T. Single-Phase Filamentary Cellular Breakdown Via Laser-Induced Solute Segregation Advanced Functional Materials. 25: 4642-4649. DOI: 10.1002/Adfm.201501450  0.723
2014 Huskinson B, Marshak MP, Suh C, Er S, Gerhardt MR, Galvin CJ, Chen X, Aspuru-Guzik A, Gordon RG, Aziz MJ. A metal-free organic-inorganic aqueous flow battery. Nature. 505: 195-8. PMID 24402280 DOI: 10.1038/Nature12909  0.777
2014 Mailoa JP, Akey AJ, Simmons CB, Hutchinson D, Mathews J, Sullivan JT, Recht D, Winkler MT, Williams JS, Warrender JM, Persans PD, Aziz MJ, Buonassisi T. Room-temperature sub-band gap optoelectronic response of hyperdoped silicon. Nature Communications. 5: 3011. PMID 24385050 DOI: 10.1038/Ncomms4011  0.79
2014 Ishii Y, Madi CS, Aziz MJ, Chason E. Stress evolution in Si during low-energy ion bombardment Journal of Materials Research. 29: 2942-2948. DOI: 10.1557/Jmr.2014.350  0.772
2014 Mailoa JP, Akey AJ, Simmons CB, Hutchinson D, Mathews J, Sullivan JT, Recht D, Winkler MT, Williams JS, Warrender JM, Persans PD, Aziz MJ, Buonassisi T. Hyperdoped silicon sub-band gap photoresponse for an intermediate band solar cell in silicon 2014 Ieee 40th Photovoltaic Specialist Conference, Pvsc 2014. 1073-1076. DOI: 10.1109/PVSC.2014.6925099  0.771
2014 Perkinson JC, Anzenberg E, Aziz MJ, Ludwig KF. Model-independent test of the truncated crater function theory of surface morphology evolution during ion bombardment Physical Review B - Condensed Matter and Materials Physics. 89. DOI: 10.1103/Physrevb.89.115433  0.318
2014 Sher MJ, Simmons CB, Krich JJ, Akey AJ, Winkler MT, Recht D, Buonassisi T, Aziz MJ, Lindenberg AM. Picosecond carrier recombination dynamics in chalcogen-hyperdoped silicon Applied Physics Letters. 105. DOI: 10.1063/1.4892357  0.719
2014 Warrender JM, Mathews J, Recht D, Smith M, Gradečak S, Aziz MJ. Morphological stability during solidification of silicon incorporating metallic impurities Journal of Applied Physics. 115. DOI: 10.1063/1.4871809  0.802
2014 Mathews J, Akey AJ, Recht D, Malladi G, Efstathiadis H, Aziz MJ, Warrender JM. On the limits to Ti incorporation into Si using pulsed laser melting Applied Physics Letters. 104. DOI: 10.1063/1.4868724  0.799
2014 Norris SA, Samela J, Vestberg M, Nordlund K, Aziz MJ. Crater functions for compound materials: A route to parameter estimation in coupled-PDE models of ion bombardment Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 318: 245-252. DOI: 10.1016/J.Nimb.2013.10.003  0.306
2014 Simmons CB, Akey AJ, Mailoa JP, Recht D, Aziz MJ, Buonassisi T. Enhancing the infrared photoresponse of silicon by controlling the fermi level location within an impurity band Advanced Functional Materials. 24: 2852-2858. DOI: 10.1002/Adfm.201303820  0.73
2013 Huskinson B, Aziz MJ. Performance Model of a Regenerative Hydrogen Bromine Fuel Cell for Grid-Scale Energy Storage Energy Science and Technology. 5: 1-16. DOI: 10.3968/J.Est.1923847920130501.854  0.778
2013 Nawar S, Huskinson B, Aziz M. Benzoquinone-hydroquinone couple for flow battery Materials Research Society Symposium Proceedings. 1491: 1-6. DOI: 10.1557/Opl.2012.1737  0.78
2013 Perkinson JC, Madi CS, Aziz MJ. Nanoscale topographic pattern formation on Kr+-bombarded germanium surfaces Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 31. DOI: 10.1116/1.4792152  0.769
2013 Madi CS, Anzenberg E, Ludwig KF, Aziz MJ. Erratum: Mass Redistribution Causes the Structural Richness of Ion-Irradiated Surfaces [Phys. Rev. Lett.106, 066101 (2011)] Physical Review Letters. 110. DOI: 10.1103/Physrevlett.110.069903  0.756
2013 Simmons CB, Akey AJ, Krich JJ, Sullivan JT, Recht D, Aziz MJ, Buonassisi T. Deactivation of metastable single-crystal silicon hyperdoped with sulfur Journal of Applied Physics. 114. DOI: 10.1063/1.4854835  0.738
2013 Recht D, Smith MJ, Charnvanichborikarn S, Sullivan JT, Winkler MT, Mathews J, Warrender JM, Buonassisi T, Williams JS, Gradečak S, Aziz MJ. Supersaturating silicon with transition metals by ion implantation and pulsed laser melting Journal of Applied Physics. 114. DOI: 10.1063/1.4821240  0.763
2013 Sullivan JT, Simmons CB, Krich JJ, Akey AJ, Recht D, Aziz MJ, Buonassisi T. Methodology for vetting heavily doped semiconductors for intermediate band photovoltaics: A case study in sulfur-hyperdoped silicon Journal of Applied Physics. 114. DOI: 10.1063/1.4820454  0.709
2013 Umezu I, Warrender JM, Charnvanichborikarn S, Kohno A, Williams JS, Tabbal M, Papazoglou DG, Zhang XC, Aziz MJ. Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens Journal of Applied Physics. 113. DOI: 10.1063/1.4804935  0.692
2013 Fabbri F, Smith MJ, Recht D, Aziz MJ, Gradečak S, Salviati G. Depth-resolved cathodoluminescence spectroscopy of silicon supersaturated with sulfur Applied Physics Letters. 102. DOI: 10.1063/1.4788743  0.724
2013 Bukonte L, Djurabekova F, Samela J, Nordlund K, Norris SA, Aziz MJ. Comparison of molecular dynamics and binary collision approximation simulations for atom displacement analysis Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions With Materials and Atoms. 297: 23-28. DOI: 10.1016/J.Nimb.2012.12.014  0.324
2012 Cheang-Wong JC, Narumi K, Schürmann GM, Aziz MJ, Golovchenko JA. Tunable nanometer electrode gaps by MeV ion irradiation. Applied Physics Letters. 100: 153108-1531083. PMID 22550357 DOI: 10.1063/1.3702778  0.364
2012 Ertekin E, Winkler MT, Recht D, Said AJ, Aziz MJ, Buonassisi T, Grossman JC. Insulator-to-metal transition in selenium-hyperdoped silicon: observation and origin. Physical Review Letters. 108: 026401. PMID 22324699 DOI: 10.1103/Physrevlett.108.026401  0.709
2012 Persans PD, Berry NE, Recht D, Hutchinson D, Said AJ, Warrender JM, Peterson H, DiFranzo A, McGahan C, Clark J, Cunningham W, Aziz MJ. Photocarrier excitation and transport in hyperdoped planar silicon devices Materials Research Society Symposium Proceedings. 1321: 291-296. DOI: 10.1557/Opl.2011.1150  0.778
2012 Rugolo J, Huskinson B, Aziz MJ. Model of performance of a regenerative hydrogen chlorine fuel cell for grid-scale electrical energy storage Journal of the Electrochemical Society. 159: B133-B144. DOI: 10.1149/2.030202Jes  0.764
2012 Recht D, Hutchinson D, Cruson T, DiFranzo A, McAllister A, Said AJ, Warrender JM, Persans PD, Aziz MJ. Contactless microwave measurements of photoconductivity in silicon hyperdoped with chalcogens Applied Physics Express. 5. DOI: 10.1143/Apex.5.041301  0.783
2012 Anzenberg E, Perkinson JC, Madi CS, Aziz MJ, Ludwig KF. Nanoscale surface pattern formation kinetics on germanium irradiated by Kr+ ions Physical Review B - Condensed Matter and Materials Physics. 86. DOI: 10.1103/Physrevb.86.245412  0.772
2012 Holmes-Cerfon M, Aziz MJ, Brenner MP. Creating sharp features by colliding shocks on uniformly irradiated surfaces Physical Review B - Condensed Matter and Materials Physics. 85. DOI: 10.1103/Physrevb.85.165441  0.348
2012 Holmes-Cerfon M, Zhou W, Bertozzi AL, Brenner MP, Aziz MJ. Development of knife-edge ridges on ion-bombarded surfaces Applied Physics Letters. 101. DOI: 10.1063/1.4755838  0.341
2012 Persans PD, Berry NE, Recht D, Hutchinson D, Peterson H, Clark J, Charnvanichborikarn S, Williams JS, Difranzo A, Aziz MJ, Warrender JM. Photocarrier lifetime and transport in silicon supersaturated with sulfur Applied Physics Letters. 101. DOI: 10.1063/1.4746752  0.755
2012 Recht D, Sullivan JT, Reedy R, Buonassisi T, Aziz MJ. Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting Applied Physics Letters. 100. DOI: 10.1063/1.3695171  0.738
2012 Huskinson B, Rugolo J, Mondal SK, Aziz MJ. A high power density, high efficiency hydrogen-chlorine regenerative fuel cell with a low precious metal content catalyst Energy and Environmental Science. 5: 8690-8698. DOI: 10.1039/C2Ee22274D  0.767
2012 Rugolo J, Aziz MJ. Electricity storage for intermittent renewable sources Energy and Environmental Science. 5: 7151-7160. DOI: 10.1039/C2Ee02542F  0.764
2012 Madi CS, Aziz MJ. Multiple scattering causes the low energy-low angle constant wavelength topographical instability of argon ion bombarded silicon surfaces Applied Surface Science. 258: 4112-4115. DOI: 10.1016/J.Apsusc.2011.07.143  0.764
2011 Winkler MT, Recht D, Sher MJ, Said AJ, Mazur E, Aziz MJ. Insulator-to-metal transition in sulfur-doped silicon. Physical Review Letters. 106: 178701. PMID 21635068 DOI: 10.1103/Physrevlett.106.178701  0.724
2011 Hoogerheide DP, George HB, Golovchenko JA, Aziz MJ. Thermal activation and saturation of ion beam sculpting. Journal of Applied Physics. 109: 74312-743124. PMID 21544213 DOI: 10.1063/1.3569705  0.719
2011 Norris SA, Samela J, Bukonte L, Backman M, Djurabekova F, Nordlund K, Madi CS, Brenner MP, Aziz MJ. Molecular dynamics of single-particle impacts predicts phase diagrams for large scale pattern formation. Nature Communications. 2: 276. PMID 21505432 DOI: 10.1038/Ncomms1280  0.758
2011 Madi CS, Anzenberg E, Ludwig KF, Aziz MJ. Mass redistribution causes the structural richness of ion-irradiated surfaces. Physical Review Letters. 106: 066101. PMID 21405479 DOI: 10.1103/Physrevlett.106.066101  0.756
2011 Mondal SK, Rugolo J, Aziz MJ. Alloy oxide electrocatalysts for regenerative hydrogen-halogen fuel cell Materials Research Society Symposium Proceedings. 1311: 19-24. DOI: 10.1557/Opl.2011.108  0.771
2011 Madi CS, Davidovitch B, George HB, Norris SA, Brenner MP, Aziz MJ. Erratum: Multiple Bifurcation Types and the Linear Dynamics of Ion Sputtered Surfaces [Phys. Rev. Lett.101, 246102 (2008)] Physical Review Letters. 107. DOI: 10.1103/Physrevlett.107.049902  0.781
2011 Anzenberg E, Madi CS, Aziz MJ, Ludwig KF. Time-resolved measurements of nanoscale surface pattern formation kinetics in two dimensions on ion-irradiated Si Physical Review B - Condensed Matter and Materials Physics. 84. DOI: 10.1103/Physrevb.84.214108  0.771
2011 Umezu I, Kohno A, Warrender JM, Takatori Y, Hirao Y, Nakagawa S, Sugimura A, Charnvanichborikarn S, Williams JS, Aziz MJ. Strong mid-infrared optical absorption by supersaturated sulfur doping in silicon Aip Conference Proceedings. 1399: 51-52. DOI: 10.1063/1.3666252  0.653
2011 Sullivan JT, Wilks RG, Winkler MT, Weinhardt L, Recht D, Said AJ, Newman BK, Zhang Y, Blum M, Krause S, Yang WL, Heske C, Aziz MJ, Br M, Buonassisi T. Soft x-ray emission spectroscopy studies of the electronic structure of silicon supersaturated with sulfur Applied Physics Letters. 99. DOI: 10.1063/1.3643050  0.714
2011 Said AJ, Recht D, Sullivan JT, Warrender JM, Buonassisi T, Persans PD, Aziz MJ. Extended infrared photoresponse and gain in chalcogen-supersaturated silicon photodiodes Applied Physics Letters. 99. DOI: 10.1063/1.3609871  0.789
2011 Dolph MC, Kim T, Yin W, Recht D, Fan W, Yu J, Aziz MJ, Lu J, Wolf SA. Magnetic properties of ion implanted Ge1-xMnx thin films solidified through pulsed laser melting Journal of Applied Physics. 109. DOI: 10.1063/1.3590137  0.716
2011 Pan SH, Recht D, Charnvanichborikarn S, Williams JS, Aziz MJ. Enhanced visible and near-infrared optical absorption in silicon supersaturated with chalcogens Applied Physics Letters. 98. DOI: 10.1063/1.3567759  0.733
2011 Adam S, Huskinson B, Aziz M, Bell D. Exploring the Deeper Layers of Fuel Cells with Transmission Electron Microscopy Microscopy and Microanalysis. 17: 1680-1681. DOI: 10.1017/S1431927611009275  0.756
2011 Hartman K, Johnson JL, Bertoni MI, Recht D, Aziz MJ, Scarpulla MA, Buonassisi T. SnS thin-films by RF sputtering at room temperature Thin Solid Films. 519: 7421-7424. DOI: 10.1016/J.Tsf.2010.12.186  0.705
2010 George HB, Tang Y, Chen X, Li J, Hutchinson JW, Golovchenko JA, Aziz MJ. Nanopore fabrication in amorphous Si: Viscous flow model and comparison to experiment. Journal of Applied Physics. 108: 14310. PMID 20680096 DOI: 10.1063/1.3452390  0.719
2010 Yi W, Kim T, Shalish I, Loncar M, Aziz MJ, Narayanamurti V. Room-temperature photoresponse of Schottky photodiodes based on GaN xAs1-x synthesized by ion implantation and pulsed-laser melting Applied Physics Letters. 97. DOI: 10.1063/1.3500981  0.354
2010 George HB, Hoogerheide DP, Madi CS, Bell DC, Golovchenko JA, Aziz MJ. Ion-sculpting of nanopores in amorphous metals, semiconductors, and insulators Applied Physics Letters. 96. DOI: 10.1063/1.3441406  0.801
2010 Yang Y, Bao J, Wang C, Aziz MJ. Sub-bandgap luminescence centers in silicon created by self-ion implantation and thermal annealing Journal of Applied Physics. 107. DOI: 10.1063/1.3436572  0.338
2010 Bob BP, Kohno A, Charnvanichborikarn S, Warrender JM, Umezu I, Tabbal M, Williams JS, Aziz MJ. Fabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser melting Journal of Applied Physics. 107. DOI: 10.1063/1.3415544  0.723
2010 Tabbal M, Kim T, Woolf DN, Shin B, Aziz MJ. Fabrication and sub-band-gap absorption of single-crystal Si supersaturated with Se by pulsed laser mixing Applied Physics a: Materials Science and Processing. 98: 589-594. DOI: 10.1007/S00339-009-5462-1  0.566
2009 Davidovitch B, Aziz MJ, Brenner MP. Linear dynamics of ion sputtered surfaces: instability, stability and bifurcations. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 21: 224019. PMID 21715757 DOI: 10.1088/0953-8984/21/22/224019  0.338
2009 Norris SA, Brenner MP, Aziz MJ. From crater functions to partial differential equations: a new approach to ion bombardment induced nonequilibrium pattern formation. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 21: 224017. PMID 21715755 DOI: 10.1088/0953-8984/21/22/224017  0.315
2009 Madi CS, Bola George H, Aziz MJ. Linear stability and instability patterns in ion-sputtered silicon. Journal of Physics. Condensed Matter : An Institute of Physics Journal. 21: 224010. PMID 21715748 DOI: 10.1088/0953-8984/21/22/224010  0.776
2009 Raja SN, Aziz MJ, Foley JW, Tolls V. FIB machining of occulting masks for imaging of extrasolar planets Proceedings of Spie - the International Society For Optical Engineering. 7440. DOI: 10.1117/12.828515  0.302
2009 Recht D, Capasso F, Aziz MJ. On the temperature dependence of point-defect-mediated luminescence in silicon Applied Physics Letters. 94. DOI: 10.1063/1.3157277  0.711
2008 Madi CS, Davidovitch B, George HB, Norris SA, Brenner MP, Aziz MJ. Multiple bifurcation types and the linear dynamics of ion sputtered surfaces. Physical Review Letters. 101: 246102. PMID 19113635 DOI: 10.1103/Physrevlett.101.246102  0.795
2008 Madi CS, Davidovitch B, George HB, Norris SA, Brenner MP, Aziz MJ. Multiple bifurcation types and the linear dynamics of ion sputtered surfaces Physical Review Letters. 101. DOI: 10.1103/PhysRevLett.101.246102  0.781
2008 Kim T, Alberi K, Dubon OD, Aziz MJ, Narayanamurti V. Composition dependence of Schottky barrier heights and bandgap energies of GaNx As1-x synthesized by ion implantation and pulsed-laser melting Journal of Applied Physics. 104. DOI: 10.1063/1.3041154  0.379
2008 Kim T, Aziz MJ, Narayanamurti V. Two dimensionally patterned GaNxAs1-x/GaAs nanostructures using N+ implantation followed by pulsed laser melting Applied Physics Letters. 93. DOI: 10.1063/1.2982424  0.356
2008 Aziz MJ. Film growth mechanisms in pulsed laser deposition Applied Physics a: Materials Science and Processing. 93: 579-587. DOI: 10.1007/S00339-008-4696-7  0.305
2007 Bao J, Tabbal M, Kim T, Charnvanichborikarn S, Williams JS, Aziz MJ, Capasso F. Point defect engineered Si sub-bandgap light-emitting diode. Optics Express. 15: 6727-33. PMID 19546982 DOI: 10.1117/12.758543  0.336
2007 MoberlyChan WJ, Adams DP, Aziz MJ, Hobler G, Schenkel T. Fundamentals of focused ion beam nanostructural processing: Below, at, and above the surface Mrs Bulletin. 32: 424-432. DOI: 10.1557/Mrs2007.66  0.341
2007 Tabbal M, Aziz MJ, Madi C, Charnvanichborikarn S, Williams JS, Christidis TC. Excimer laser processing of novel materials for optoelectronic and spintronic applications Proceedings of Spie - the International Society For Optical Engineering. 6458. DOI: 10.1117/12.716788  0.765
2007 Tabbal M, Kim T, Warrender JM, Aziz MJ, Cardozo BL, Goldman RS. Formation of single crystal sulfur supersaturated silicon based junctions by pulsed laser melting Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 25: 1847-1852. DOI: 10.1116/1.2796184  0.709
2007 Shin B, Leonard JP, McCamy JW, Aziz MJ. On the phase shift of reflection high energy electron diffraction intensity oscillations during Ge(001) homoepitaxy by molecular beam epitaxy Journal of Vacuum Science and Technology a: Vacuum, Surfaces and Films. 25: 221-224. DOI: 10.1116/1.2429678  0.5
2007 Davidovitch B, Aziz MJ, Brenner MP. On the stabilization of ion sputtered surfaces Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.205420  0.332
2007 Shin B, Aziz MJ. Modeling RHEED intensity oscillations in multilayer epitaxy: Determination of the Ehrlich-Schwoebel barrier in Ge(001) homoepitaxy Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.165408  0.519
2007 Shin B, Aziz MJ. Kinetic-energy induced smoothening and delay of epitaxial breakdown in pulsed-laser deposition Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.085431  0.538
2007 Warrender JM, Aziz MJ. Effect of deposition rate on morphology evolution of metal-on-insulator films grown by pulsed laser deposition Physical Review B - Condensed Matter and Materials Physics. 76. DOI: 10.1103/Physrevb.76.045414  0.697
2007 Warrender JM, Aziz MJ. Kinetic energy effects on morphology evolution during pulsed laser deposition of metal-on-insulator films Physical Review B - Condensed Matter and Materials Physics. 75. DOI: 10.1103/Physrevb.75.085433  0.685
2007 Spaepen F, Aziz MJ. David Turnbull (1915–2007) Nature Materials. 6: 556-557. DOI: 10.1038/Nmat1952  0.46
2006 Kim YR, Chen P, Aziz MJ, Branton D, Vlassak JJ. Focused ion beam induced deflections of freestanding thin films. Journal of Applied Physics. 100: 104322-104330. PMID 22485053 DOI: 10.1063/1.2363900  0.337
2006 Aziz MJ, Zhao Y, Gossmann HJ, Mitha S, Smith SP, Schiferl D. Pressure and stress effects on the diffusion of B and Sb in Si and Si-Ge alloys Physical Review B - Condensed Matter and Materials Physics. 73. DOI: 10.1103/Physrevb.73.054101  0.309
2006 Otani K, Chen X, Hutchinson JW, Chervinsky JF, Aziz MJ. Three-dimensional morphology evolution of SiO 2 patterned films under MeV ion irradiation Journal of Applied Physics. 100. DOI: 10.1063/1.2215269  0.346
2006 Kim TG, Warrender JM, Aziz MJ. Strong sub-band-gap infrared absorption in silicon supersaturated with sulfur Applied Physics Letters. 88. DOI: 10.1063/1.2212051  0.719
2006 Sage JF, Barvosa-Carter W, Aziz MJ. Strain-stabilized solid phase epitaxy of Si-Ge on Si Journal of Applied Physics. 99. DOI: 10.1063/1.2200448  0.321
2005 Chen HH, Urquidez OA, Ichim S, Rodriquez LH, Brenner MP, Aziz MJ. Shocks in ion sputtering sharpen steep surface features. Science (New York, N.Y.). 310: 294-7. PMID 16224017 DOI: 10.1126/Science.1117219  0.339
2005 George HB, Brown AD, McGrath MR, Erlebacher J, Aziz MJ. Quantifying the order of spontaneous ripple patterns on ion-irradiated Si(111) Materials Research Society Symposium Proceedings. 908: 1-6. DOI: 10.1557/Proc-0908-Oo02-04  0.792
2005 Ichim S, Aziz MJ. Lateral templating of self-organized ripple morphologies during focused ion beam milling of Ge Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures. 23: 1068-1071. DOI: 10.1116/1.1897711  0.321
2005 Arnold CB, Aziz MJ. Unified kinetic model of dopant segregation during vapor-phase growth Physical Review B - Condensed Matter and Materials Physics. 72. DOI: 10.1103/Physrevb.72.195419  0.551
2005 Shin B, Leonard JP, McCamy JW, Aziz MJ. Comparison of morphology evolution of Ge(001) homoepitaxial films grown by pulsed laser deposition and molecular-beam epitaxy Applied Physics Letters. 87: 1-3. DOI: 10.1063/1.2108115  0.533
2005 Zhao Y, Aziz MJ, Zangenberg NR, Larsen AN. Activation volume for phosphorus diffusion in silicon and Si0.93 Ge0.07 Applied Physics Letters. 86: 1-3. DOI: 10.1063/1.1896445  0.311
2005 Cuenat A, George HB, Chang KC, Blakely JM, Aziz MJ. Lateral templating for guided self-organization of sputter morphologies Advanced Materials. 17: 2845-2849. DOI: 10.1002/Adma.200500717  0.734
2004 Barvosa-Carter W, Aziz MJ, Phan AV, Kaplan T, Gray LJ. Interfacial roughening during solid phase epitaxy: Interaction of dopant, stress, and anlsotropy effects Journal of Applied Physics. 96: 5462-5468. DOI: 10.1063/1.1790580  0.31
2004 Crouch CH, Carey JE, Warrender JM, Aziz MJ, Mazur E, Génin FY. Comparison of structure and properties of femtosecond and nanosecond laser-structured silicon Applied Physics Letters. 84: 1850-1852. DOI: 10.1063/1.1667004  0.687
2004 Leonard JP, Renk TJ, Thompson MO, Aziz MJ. Solute diffusion in liquid nickel measured by pulsed ion beam melting Metallurgical and Materials Transactions a: Physical Metallurgy and Materials Science. 35: 2803-2807. DOI: 10.1007/S11661-004-0227-0  0.345
2004 Warrender JM, Aziz MJ. Evolution of Ag nanocrystal films grown by pulsed laser deposition Applied Physics a: Materials Science and Processing. 79: 713-716. DOI: 10.1007/S00339-004-2573-6  0.688
2003 Brown AD, George HB, Aziz MJ, Erlebacher J. One and two-dimensional pattern formation on ion sputtered silicon Materials Research Society Symposium - Proceedings. 792: 315-320. DOI: 10.1557/Proc-792-R7.8  0.787
2003 Chason E, Aziz MJ. Spontaneous formation of patterns on sputtered surfaces Scripta Materialia. 49: 953-959. DOI: 10.1016/S1359-6462(03)00474-3  0.327
2002 Warrender JM, Aziz MJ. Morphological Evolution of Ag/Mica Films Grown by Pulsed Laser Deposition Materials Research Society Symposium - Proceedings. 749: 49-54. DOI: 10.1557/Proc-749-W3.1  0.679
2002 Leonard JP, Shin B, McCamy JW, Aziz MJ. Comparison of Growth Morphology in Ge (001) Homoepitaxy Using Pulsed Laser Deposition and MBE Materials Research Society Symposium - Proceedings. 749: 291-296. DOI: 10.1557/Proc-749-W16.11  0.519
2002 Arnold CB, Aziz MJ. Kinetic modeling of dopant and impurity surface segregation during vapor phase growth: Multiple mechanism approach Materials Research Society Symposium - Proceedings. 749: 247-253. DOI: 10.1557/Proc-749-W14.3  0.55
2002 Cuenat A, Aziz MJ. Spontaneous pattern formation from focused and unfocused ion beam irradiation Materials Research Society Symposium - Proceedings. 707: 113-118. DOI: 10.1557/Proc-696-N2.8  0.334
2002 Erlebacher J, Aziz MJ, Chason E, Sinclair MB, Floro JA. Erlebacher et al. Reply Physical Review Letters. 88: 169602. DOI: 10.1103/Physrevlett.88.169602  0.583
2002 Yu KM, Walukiewicz W, Beeman JW, Scarpulla MA, Dubon OD, Pillai MR, Aziz MJ. Enhanced nitrogen incorporation by pulsed laser annealing of GaN xAs1-x formed by N ion implantation Applied Physics Letters. 80: 3958-3960. DOI: 10.1063/1.1481196  0.31
2001 Li J, Stein D, McMullan C, Branton D, Aziz MJ, Golovchenko JA. Ion-beam sculpting at nanometre length scales. Nature. 412: 166-9. PMID 11449268 DOI: 10.1038/35084037  0.329
2001 Erlebacher J, Aziz MJ, Karma A, Dimitrov N, Sieradzki K. Evolution of nanoporosity in dealloying. Nature. 410: 450-3. PMID 11260708 DOI: 10.1038/35068529  0.639
2001 Arnold CB, Aziz MJ. Model for dopant and impurity segregation during vapor phase growth Materials Research Society Symposium - Proceedings. 648: P3111-P3117. DOI: 10.1557/Proc-648-P3.11  0.55
2001 Dubon OD, Evans PG, Chervinsky JF, Aziz MJ, Spaepen F, Golovchenko JA, Chisholm MF, Muller DA. Doping by metal-mediated epitaxy: Growth of As delta-doped Si through a Pb monolayer Applied Physics Letters. 78: 1505-1507. DOI: 10.1063/1.1352692  0.574
2001 Chason E, Erlebacher J, Aziz M, Floro JA, Sinclair MB. Dynamics of pattern formation during low-energy ion bombardment of Si(0 0 1) Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions With Materials and Atoms. 178: 55-61. DOI: 10.1016/S0168-583X(01)00505-5  0.676
2001 Sanders PG, Thompson MO, Renk TJ, Aziz MJ. Liquid titanium solute diffusion measured by pulsed ion-beam melting Metallurgical and Materials Transactions a: Physical Metallurgy and Materials Science. 32: 2969-2974. DOI: 10.1007/S11661-001-0171-1  0.333
2000 Erlebacher J, Aziz MJ, Chason E, Sinclair MB, Floro JA. Nonclassical smoothening of nanoscale surface corrugations. Physical Review Letters. 84: 5800-3. PMID 10991058 DOI: 10.1103/Physrevlett.84.5800  0.658
2000 Erlebacher J, Aziz MJ, Chason E, Sinclair MB, Floro JA. Nonlinear amplitude evolution during spontaneous patterning of ion-bombarded Si(001) Journal of Vacuum Science and Technology. 18: 115-120. DOI: 10.1116/1.582127  0.676
2000 Kittl JA, Sanders PG, Aziz MJ, Brunco DP, Thompson MO. Complete experimental test of kinetic models for rapid alloy solidification Acta Materialia. 48: 4797-4811. DOI: 10.1016/S1359-6454(00)00276-7  0.328
1999 Dubon OD, Evans PO, Chervinsky JF, Spaepen F, Aziz MJ, Golovchenko JA. Low-temperature Si (111)homoepitaxy and doping mediated by a monolayerofpb Materials Research Society Symposium - Proceedings. 570: 45-49. DOI: 10.1557/Proc-570-45  0.544
1999 Erlebacher J, Aziz MJ, Chason E, Sinclair MB, Floro JA. Spontaneous Pattern Formation on Ion Bombarded Si(001) Physical Review Letters. 82: 2330-2333. DOI: 10.1103/Physrevlett.82.2330  0.685
1999 Arnold CB, Aziz MJ, Schwarz M, Herlach DM. Parameter-free test of alloy dendrite-growth theory Physical Review B. 59: 334-343. DOI: 10.1103/Physrevb.59.334  0.525
1999 Sanders PG, Aziz MJ. Self-diffusivity of liquid silicon measured by pulsed laser melting Journal of Applied Physics. 86: 4258-4261. DOI: 10.1063/1.371354  0.365
1999 Arnold CB, Aziz M. Stoichiometry issues in pulsed-laser deposition of alloys grown from multicomponent targets Applied Physics A. 69: 23-27. DOI: 10.1007/S003390051349  0.528
1998 Bernstein N, Aziz M, Kaxiras E. Amorphous-crystal interface in silicon: A tight-binding simulation Physical Review B. 58: 4579-4583. DOI: 10.1103/Physrevb.58.4579  0.304
1998 Bernstein N, Aziz MJ, Kaxiras E. Atomistic features of the amorphous-crystal interface in silicon Journal of Computer-Aided Materials Design. 5: 55-60. DOI: 10.1023/A:1008603024571  0.308
1997 Schwarz M, Arnold CB, Aziz M, Herlach DM. Dendritic growth velocity and diffusive speed in solidification of undercooled dilute Ni-Zr melts Materials Science and Engineering a-Structural Materials Properties Microstructure and Processing. 420-424. DOI: 10.1016/S0921-5093(96)10656-0  0.532
1997 Erlebacher JD, Aziz MJ. Morphological equilibration of rippled and dimpled crystal surfaces: the role of terrace-width fluctuations Surface Science. 374: 427-442. DOI: 10.1016/S0039-6028(96)01231-9  0.639
1996 Zhao Y, Aziz MJ, Mitha S, Schiferl D. Effect of Pressure on Boron Diffusion in Silicon Mrs Proceedings. 442: 305. DOI: 10.1557/Proc-442-305  0.306
1996 McCamy JW, Aziz MJ. Time-resolved RHEED Studies of the Growth of Epitaxial ZnSe Films on GaAs By Pulsed Laser Deposition Mrs Proceedings. 441. DOI: 10.1557/Proc-441-621  0.306
1996 White CW, Budai JD, Zhu JG, Withrow SP, Aziz MJ. Ion-beam synthesis and stability of GaAs nanocrystals in silicon Applied Physics Letters. 68: 2389-2391. DOI: 10.1063/1.116143  0.342
1996 Theiss SD, Spaepen F, Aziz MJ. Pressure‐enhanced interdiffusion in amorphous Si/Ge multilayers Applied Physics Letters. 68: 1226-1228. DOI: 10.1063/1.115934  0.551
1996 Isono N, Smith PM, Turnbull D, Aziz M. Anomalous Diffusion of Fe in Liquid Al Measured by the Pulsed Laser Technique Metallurgical and Materials Transactions a-Physical Metallurgy and Materials Science. 27: 725-730. DOI: 10.1007/Bf02648959  0.605
1996 Aziz MJ. Interface attachment kinetics in alloy solidification Metallurgical and Materials Transactions a-Physical Metallurgy and Materials Science. 27: 671-686. DOI: 10.1007/Bf02648954  0.309
1995 Brunco DP, Thompson MO, Hoglund DE, Aziz MJ, Gossmann H‐. Germanium partitioning in silicon during rapid solidification Journal of Applied Physics. 78: 1575-1582. DOI: 10.1063/1.360251  0.319
1995 Kittl JA, Aziz M, Brunco DP, Thompson MO. Nonequilibrium partitioning during rapid solidification of Si-As alloys Journal of Crystal Growth. 148: 172-182. DOI: 10.1016/0022-0248(94)00836-1  0.321
1994 Carter WB, Aziz MJ. Nonhydrostatic Stress Effects on Solid Phase Epitaxial Growth in Silicon Mrs Proceedings. 356: 87. DOI: 10.1557/Proc-356-87  0.338
1994 Theiss SD, Spaepen F, Aziz MJ. Pressure-Enhanced Interdiffusion in Amorphous Si/Ge Multilayers: Implications for Defect-Mediated Diffusion Mrs Proceedings. 356. DOI: 10.1557/Proc-356-15  0.545
1994 Brunco DP, Thompson MO, Hoglundt DE, Aziz MJ. Germanium Partitioning and Interface Stability During Rapid Solidification of Gesi Alloys Mrs Proceedings. 354: 653. DOI: 10.1557/Proc-354-653  0.328
1993 Theiss SD, Mitha S, Spaepen F, Aziz MJ. Interdiffusion of Amorphous Si/Ge Multilayers Under Hydrostatic Pressure Mrs Proceedings. 321. DOI: 10.1557/Proc-321-59  0.548
1993 Kittl JA, Reitano R, Aziz M, Brunco DP, Thompson MO. Time-Resolved Temperature Measurements during Rapid Solidification of Si-As Alloys Induced by Pulsed-Laser Melting. Journal of Applied Physics. 73: 3725-3733. DOI: 10.1063/1.352903  0.31
1993 Brunco DP, Kittl JA, Otis CE, Goodwin PM, Thompson MO, Aziz MJ. Time‐resolved temperature measurements during pulsed laser irradiation using thin film metal thermometers Review of Scientific Instruments. 64: 2615-2623. DOI: 10.1063/1.1143879  0.328
1992 Smith PM, Reitanot R, Aziz MJ. Solute Trapping in Metals Mrs Proceedings. 279. DOI: 10.1557/Proc-279-749  0.305
1992 Kittl JA, Reitano R, Aziz MJ, Brunco DP, Thompson MO. Congruent Melting Temperatures of Si-As Alloys Measured During Pulsed-Laser Melting and Rapid Solidification Mrs Proceedings. 279: 691. DOI: 10.1557/Proc-279-691  0.31
1992 Aziz MJ. The Mechanism of Solid Phase Epitaxy Nato Asi Series. Series E, Applied Sciences. 465-476. DOI: 10.1007/978-94-011-2714-1_47  0.34
1991 Lu G, Nygren E, Aziz MJ. Pressure‐enhanced crystallization kinetics of amorphous Si and Ge: Implications for point‐defect mechanisms Journal of Applied Physics. 70: 5323-5345. DOI: 10.1063/1.350243  0.334
1991 Devaud G, Hayzelden C, Aziz MJ, Turnbull D. Growth of quartz from amorphous silica at ambient pressure Journal of Non-Crystalline Solids. 134: 129-132. DOI: 10.1016/0022-3093(91)90020-7  0.616
1991 Hoglund DE, Aziz MJ, Stiffler SR, Thompson MO, Tsao JY, Peercy PS. Effect of nonequilibrium interface kinetics on cellular breakdown of planar interfaces during rapid solidification of Si-Sn Journal of Crystal Growth. 109: 107-112. DOI: 10.1016/0022-0248(91)90164-Z  0.322
1990 Lu G, Nygren E, Aziz MJ. Pressure-Enhanced Solid Phase Epitaxy: Implications for Point Defect Mechanisms Mrs Proceedings. 205. DOI: 10.1557/Proc-205-33  0.323
1990 Lee K, West JA, Smith PM, Aziz MJ, Knapp JA. Measurements of To Temperatures of Supersaturated Si-As Alloys Mrs Proceedings. 205: 301. DOI: 10.1557/Proc-205-301  0.341
1990 Aziz MJ, Sabin PC, Lu G. Effect of Nonhydrostatic Stress on Crystal Growth Kinetics Mrs Proceedings. 202. DOI: 10.1557/Proc-202-567  0.313
1990 Lu GQ, Nygren E, Aziz MJ, Turnbull D, White CW. Pressure‐enhanced solid phase epitaxy of germanium Applied Physics Letters. 56: 137-139. DOI: 10.1063/1.103053  0.606
1989 Atwater HA, West JA, Smith PM, Aziz M, Tsao J, Peercy P, Thompson MO. Time-Resolved Measurements of Solidification and Undercooling in Metals and Alloys Mrs Proceedings. 157. DOI: 10.1557/Proc-157-369  0.305
1989 Lu GQ, Nygren E, Aziz MJ, Turnbull D, White CW. Interferometric measurement of the pressure‐enhanced crystallization rate of amorphous Si Applied Physics Letters. 54: 2583-2585. DOI: 10.1063/1.101056  0.598
1989 Devaud G, Aziz MJ, Turnbull D. High-pressure crystallization kinetics of As2S3 Journal of Non-Crystalline Solids. 109: 121-128. DOI: 10.1016/0022-3093(89)90450-X  0.601
1988 Tsao JY, Aziz M, Peercy PS, Thompson MO. Interface Velocity Transients During Melting of a-Si/c-Si Thin Films Mrs Proceedings. 100: 519. DOI: 10.1557/Proc-100-519  0.32
1988 Lu GQ, Nygren E, Aziz MJ, Turnbull D, White CW. Time-Resolved Reflectivity Measurement of the Pressure-Enhanced Crystallization Rate of Amorphous Si in a Diamond Anvil Cell Mrs Proceedings. 100. DOI: 10.1557/Proc-100-435  0.601
1988 White CW, Boatner LA, Sklad PS, McHargue CJ, Rankin J, Farlow GC, Aziz MJ. Ion implantation and annealing of crystalline oxides and ceramic materials Nuclear Inst. and Methods in Physics Research, B. 32: 11-22. DOI: 10.1016/0168-583X(88)90172-3  0.352
1987 White CW, Boatner LA, Rankin J, Aziz MJ. Ion Implantation and Annealing of SrTiO3 and CaTiO3 Mrs Proceedings. 93: 9. DOI: 10.1557/Proc-93-9  0.349
1986 Aziz MJ, White CW. Solute trapping in silicon by lateral motion of {111} ledges. Physical Review Letters. 57: 2675-2678. PMID 10033832 DOI: 10.1103/Physrevlett.57.2675  0.316
1986 Budai JD, Aziz MJ. Formation of icosahedral Al-Mn by ion implantation into oriented crystalline films. Physical Review. B, Condensed Matter. 33: 2876-2878. PMID 9938645 DOI: 10.1103/Physrevb.33.2876  0.302
1985 White CW, Sklad PS, Boatner LA, Farlow GC, McHargue CJ, Sales BC, Aziz MJ. Ion Implantation and Annealing of Crystalline Oxides Mrs Proceedings. 60: 337. DOI: 10.1557/Proc-60-337  0.305
1985 Aziz MJ, Tsao JY, Thompson MO, Peercy PS, White CW. Velocity and Orientation Dependence of Solute Trapping Mrs Proceedings. 57: 487. DOI: 10.1557/Proc-57-487  0.323
1985 Narayan J, James RB, Holland OW, Aziz MJ. Pulsed excimer and CO2 laser annealing of ion‐implanted silicon Journal of Vacuum Science & Technology a: Vacuum, Surfaces, and Films. 3: 1836-1838. DOI: 10.1116/1.573387  0.306
1985 Nygren E, Aziz MJ, Turnbull D, Poate JM, Jacobson DC, Hull R. Pressure dependence of arsenic diffusivity in silicon Applied Physics Letters. 47: 105-107. DOI: 10.1063/1.96283  0.599
1985 Nygren E, Aziz MJ, Turnbull D, Poate JM, Jacobson DC, Hull R. Effect of pressure on the solid phase epitaxial regrowth rate of Si Applied Physics Letters. 47: 232-233. DOI: 10.1063/1.96228  0.617
1985 Narayan J, White CW, Aziz MJ, Stritzker B, Walthuis A. Pulsed excimer (KrF) laser melting of amorphous and crystalline silicon layers Journal of Applied Physics. 57: 564-567. DOI: 10.1063/1.334738  0.329
1985 Aziz MJ, Nygren E, Hays JF, Turnbull D. Crystal growth kinetics of boron oxide under pressure Journal of Applied Physics. 57: 2233-2242. DOI: 10.1063/1.334368  0.592
1984 Nygren E, Aziz MJ, Turnbull D, Hays JF, Poate JM, Jacobson DC, Hull R. Pressure Dependence of Arsenic Diffusivity in Silicon Mrs Proceedings. 36: 77. DOI: 10.1557/Proc-36-77  0.581
1984 Aziz MJ, Nygren E, Christie WH, White CW, Turnbull D. Effect of pressure on self diffusion in crystalline silicon Mrs Proceedings. 36. DOI: 10.1557/Proc-36-101  0.588
1984 Aziz MJ, Tsao JY, Thompson MO, Peercy PS, White CW, Christie WH. A Test of Two Solute Trapping Models Mrs Proceedings. 35. DOI: 10.1557/Proc-35-153  0.302
1984 Narayan J, White CW, Holland OW, Aziz MJ. Phase transformation and impurity redistribution during pulsed laser irradiation of amorphous silicon layers Journal of Applied Physics. 56: 1821-1830. DOI: 10.1063/1.334192  0.351
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