| Year |
Citation |
Score |
| 2018 |
Kim K, Prasad N, Movva HCP, Burg GW, Wang Y, Larentis S, Taniguchi T, Watanabe K, Register LF, Tutuc E. Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures. Nano Letters. PMID 30105907 DOI: 10.1021/Acs.Nanolett.8B02770 |
0.716 |
|
| 2018 |
Movva HCP, Lovorn T, Fallahazad B, Larentis S, Kim K, Taniguchi T, Watanabe K, Banerjee SK, MacDonald AH, Tutuc E. Tunable Γ-K Valley Populations in Hole-Doped Trilayer WSe_{2}. Physical Review Letters. 120: 107703. PMID 29570322 DOI: 10.1103/Physrevlett.120.107703 |
0.767 |
|
| 2018 |
Larentis S, Movva HCP, Fallahazad B, Kim K, Behroozi A, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Large effective mass and interaction-enhanced Zeeman splitting of
K
-valley electrons in
MoSe2 Physical Review B. 97. DOI: 10.1103/Physrevb.97.201407 |
0.787 |
|
| 2017 |
Movva HCP, Fallahazad B, Kim K, Larentis S, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe_{2}. Physical Review Letters. 118: 247701. PMID 28665633 DOI: 10.1103/Physrevlett.118.247701 |
0.784 |
|
| 2017 |
Larentis S, Fallahazad B, Movva HCP, Kim K, Rai A, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Reconfigurable Complementary Monolayer MoTe2 Field-Effect Transistors for Integrated Circuits. Acs Nano. PMID 28414214 DOI: 10.1021/Acsnano.7B01306 |
0.779 |
|
| 2017 |
Kim K, DaSilva A, Huang S, Fallahazad B, Larentis S, Taniguchi T, Watanabe K, LeRoy BJ, MacDonald AH, Tutuc E. Tunable moiré bands and strong correlations in small-twist-angle bilayer graphene. Proceedings of the National Academy of Sciences of the United States of America. PMID 28292902 DOI: 10.1073/Pnas.1620140114 |
0.829 |
|
| 2016 |
Kim K, Yankowitz M, Fallahazad B, Kang S, Movva HC, Huang S, Larentis S, Corbet CM, Taniguchi T, Watanabe K, Banerjee SK, LeRoy BJ, Tutuc E. Correction to van der Waals Heterostructures with High Accuracy Rotational Alignment. Nano Letters. PMID 27526261 DOI: 10.1021/Acs.Nanolett.6B03255 |
0.715 |
|
| 2016 |
Fallahazad B, Movva HC, Kim K, Larentis S, Taniguchi T, Watanabe K, Banerjee SK, Tutuc E. Shubnikov-de Haas Oscillations of High-Mobility Holes in Monolayer and Bilayer WSe_{2}: Landau Level Degeneracy, Effective Mass, and Negative Compressibility. Physical Review Letters. 116: 086601. PMID 26967432 DOI: 10.1103/Physrevlett.116.086601 |
0.756 |
|
| 2016 |
Kim K, Yankowitz MA, Fallahazad B, Kang S, Movva HC, Huang S, Larentis S, Corbet CM, Taniguchi T, Watanabe K, Banerjee SK, LeRoy BJ, Tutuc E. Van der Waals Heterostructures with High Accuracy Rotational Alignment. Nano Letters. PMID 26859527 DOI: 10.1021/Acs.Nanolett.5B05263 |
0.786 |
|
| 2015 |
Rai A, Valsaraj A, Movva HC, Roy A, Ghosh R, Sonde S, Kang S, Chang J, Trivedi T, Dey R, Guchhait S, Larentis S, Register LF, Tutuc E, Banerjee SK. Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation. Nano Letters. PMID 26091062 DOI: 10.1021/Acs.Nanolett.5B00314 |
0.793 |
|
| 2015 |
Kim K, Larentis S, Fallahazad B, Lee K, Xue J, Dillen DC, Corbet CM, Tutuc E. Band Alignment in WSe2-Graphene Heterostructures. Acs Nano. 9: 4527-32. PMID 25768037 DOI: 10.1021/Acsnano.5B01114 |
0.769 |
|
| 2015 |
Yankowitz M, Larentis S, Kim K, Xue J, McKenzie D, Huang S, Paggen M, Ali MN, Cava RJ, Tutuc E, LeRoy BJ. Intrinsic disorder in graphene on transition metal dichalcogenide heterostructures. Nano Letters. 15: 1925-9. PMID 25665012 DOI: 10.1021/Nl5047736 |
0.789 |
|
| 2015 |
Fallahazad B, Lee K, Kang S, Xue J, Larentis S, Corbet C, Kim K, Movva HC, Taniguchi T, Watanabe K, Register LF, Banerjee SK, Tutuc E. Gate-tunable resonant tunneling in double bilayer graphene heterostructures. Nano Letters. 15: 428-33. PMID 25436861 DOI: 10.1021/Nl503756Y |
0.766 |
|
| 2014 |
Larentis S, Tolsma JR, Fallahazad B, Dillen DC, Kim K, MacDonald AH, Tutuc E. Band offset and negative compressibility in graphene-MoS2 heterostructures. Nano Letters. 14: 2039-45. PMID 24611616 DOI: 10.1021/Nl500212S |
0.795 |
|
| 2014 |
Chang J, Larentis S, Tutuc E, Register LF, Banerjee SK. Atomistic simulation of the electronic states of adatoms in monolayer MoS2 Applied Physics Letters. 104. DOI: 10.1063/1.4870767 |
0.609 |
|
| 2012 |
Nardi F, Larentis S, Balatti S, Gilmer DC, Ielmini D. Resistive Switching by Voltage-Driven Ion Migration in Bipolar RRAM—Part I: Experimental Study Ieee Transactions On Electron Devices. 59: 2461-2467. DOI: 10.1109/Ted.2012.2202319 |
0.307 |
|
| 2012 |
Larentis S, Fallahazad B, Tutuc E. Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers Applied Physics Letters. 101: 223104. DOI: 10.1063/1.4768218 |
0.781 |
|
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