| Year |
Citation |
Score |
| 2022 |
Lee J, Bang J, Kang J. Nonequilibrium Charge-Density-Wave Melting in 1-TaS Triggered by Electronic Excitation: A Real-Time Time-Dependent Density Functional Theory Study. The Journal of Physical Chemistry Letters. 5711-5718. PMID 35713637 DOI: 10.1021/acs.jpclett.2c01352 |
0.641 |
|
| 2020 |
Chaste J, Hnid I, Khalil L, Si C, Durnez A, Lafosse X, Zhao MQ, Johnson ATC, Zhang S, Bang J, Ouerghi A. Phase Transition in a Memristive Suspended MoS Monolayer Probed by Opto- and Electro-Mechanics. Acs Nano. PMID 33054170 DOI: 10.1021/acsnano.0c05721 |
0.514 |
|
| 2020 |
Cheng K, Wang H, Bang J, West D, Zhao J, Zhang S. Carrier Dynamics and Transfer Across the CdS/MoS Interface Upon Optical Excitation. The Journal of Physical Chemistry Letters. PMID 32693591 DOI: 10.1021/Acs.Jpclett.0C01188 |
0.568 |
|
| 2019 |
Si C, Choe DH, Xie W, Wang H, Sun Z, Bang J, Zhang S. Photo-Induced Vacancy Ordering and Phase Transition in MoTe2. Nano Letters. PMID 31096752 DOI: 10.1021/Acs.Nanolett.9B00613 |
0.741 |
|
| 2019 |
Bang J, Meng S, Zhang SB. Dynamic defect as nonradiative recombination center in semiconductors Physical Review B. 100. DOI: 10.1103/Physrevb.100.245208 |
0.327 |
|
| 2018 |
Kim H, Bang J, Kang J. Robust ferromagnetism in hydrogenated graphene mediated by spin-polarized pseudospin. Scientific Reports. 8: 13940. PMID 30224827 DOI: 10.1038/S41598-018-31934-0 |
0.646 |
|
| 2018 |
Chen NK, Li XB, Bang J, Wang XP, Han D, West D, Zhang S, Sun HB. Directional Forces by Momentumless Excitation and Order-to-Order Transition in Peierls-Distorted Solids: The Case of GeTe. Physical Review Letters. 120: 185701. PMID 29775378 DOI: 10.1103/Physrevlett.120.185701 |
0.576 |
|
| 2018 |
Lucking MC, Zheng F, Han MJ, Bang J, Zhang S. Doping-induced antiferromagnetic bicollinear insulating state and superconducting temperature of monolayer FeSe systems Physical Review B. 98. DOI: 10.1103/Physrevb.98.014504 |
0.534 |
|
| 2017 |
Chen NK, Han D, Li XB, Liu F, Bang J, Wang XP, Chen QD, Wang HY, Zhang S, Sun HB. Giant lattice expansion by quantum stress and universal atomic forces in semiconductors under instant ultrafast laser excitation. Physical Chemistry Chemical Physics : Pccp. PMID 28861554 DOI: 10.1039/C7Cp03103C |
0.595 |
|
| 2016 |
Bang J, Sun YY, Liu XQ, Gao F, Zhang SB. Carrier-Multiplication-Induced Structural Change during Ultrafast Carrier Relaxation and Nonthermal Phase Transition in Semiconductors. Physical Review Letters. 117: 126402. PMID 27689286 DOI: 10.1103/Physrevlett.117.126402 |
0.353 |
|
| 2016 |
Han D, Bang J, Xie W, Meunier V, Zhang S. Phonon-enabled Carrier Transport of Localized States at Non-polar Semiconductor Surfaces: A First-principles Based Prediction. The Journal of Physical Chemistry Letters. PMID 27552528 DOI: 10.1021/Acs.Jpclett.6B01608 |
0.565 |
|
| 2016 |
Wang H, Bang J, Sun Y, Liang L, West D, Meunier V, Zhang S. The role of collective motion in the ultrafast charge transfer in van der Waals heterostructures. Nature Communications. 7: 11504. PMID 27160484 DOI: 10.1038/Ncomms11504 |
0.559 |
|
| 2016 |
Bang J, Sun YY, Song JH, Zhang SB. Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices. Scientific Reports. 6: 24404. PMID 27075818 DOI: 10.1038/Srep24404 |
0.37 |
|
| 2016 |
Seo S, Lee HU, Lee SC, Kim Y, Kim H, Bang J, Won J, Kim Y, Park B, Lee J. Triangular Black Phosphorus Atomic Layers by Liquid Exfoliation. Scientific Reports. 6: 23736. PMID 27026070 DOI: 10.1038/Srep23736 |
0.35 |
|
| 2015 |
Bang J, Sun YY, West D, Meyer BK, Zhang S. Molecular doping of ZnO by ammonia: A possible shallow acceptor Journal of Materials Chemistry C. 3: 339-344. DOI: 10.1039/C4Tc02209B |
0.59 |
|
| 2015 |
Lucking MC, Bang J, Terrones H, Sun YY, Zhang S. Multivalency-induced band gap opening at MoS2 edges Chemistry of Materials. 27: 3326-3331. DOI: 10.1021/Acs.Chemmater.5B00398 |
0.578 |
|
| 2014 |
Bang J, Kim Y, Park CH, Gao F, Zhang SB. Understanding the presence of vacancy clusters in ZnO from a kinetic perspective Applied Physics Letters. 104: 252101. DOI: 10.1063/1.4884653 |
0.532 |
|
| 2013 |
Wang Z, Gu M, Zhou Y, Zu X, Connell JG, Xiao J, Perea D, Lauhon LJ, Bang J, Zhang S, Wang C, Gao F. Electron-rich driven electrochemical solid-state amorphization in Li-Si alloys. Nano Letters. 13: 4511-6. PMID 23944904 DOI: 10.1021/Nl402429A |
0.595 |
|
| 2013 |
Bang J, Meng S, Sun YY, West D, Wang Z, Gao F, Zhang SB. Regulating energy transfer of excited carriers and the case for excitation-induced hydrogen dissociation on hydrogenated graphene. Proceedings of the National Academy of Sciences of the United States of America. 110: 908-11. PMID 23277576 DOI: 10.1073/Pnas.1210313110 |
0.591 |
|
| 2013 |
Bang J, Li Z, Sun YY, Samanta A, Zhang YY, Zhang W, Wang L, Chen X, Ma X, Xue Q, Zhang SB. Atomic and electronic structures of single-layer FeSe on SrTiO3(001): The role of oxygen deficiency Physical Review B. 87. DOI: 10.1103/Physrevb.87.220503 |
0.676 |
|
| 2013 |
Bang J, Wang Z, Gao F, Meng S, Zhang SB. Suppression of nonradiative recombination in ionic insulators by defects: Role of fast electron trapping in Tl-doped CsI Physical Review B. 87. DOI: 10.1103/Physrevb.87.205206 |
0.625 |
|
| 2013 |
Han D, Sun YY, Bang J, Zhang YY, Sun H, Li X, Zhang SB. Deep electron traps and origin ofp-type conductivity in the earth-abundant solar-cell material Cu2ZnSnS4 Physical Review B. 87. DOI: 10.1103/Physrevb.87.155206 |
0.55 |
|
| 2013 |
Xie W, Bang J, Zhang S. Microscopic Origin for Electrically Benign Small-angle Grain Boundaries in Low-cost Semiconductors Materials Research Letters. 2: 51-56. DOI: 10.1080/21663831.2013.859639 |
0.547 |
|
| 2012 |
Sun YY, Ruan WY, Gao X, Bang J, Kim Y, Lee K, West D, Liu X, Chan T, Chou MY, Zhang SB. Phase diagram of graphene nanoribbons and band-gap bifurcation of Dirac fermions under quantum confinement Physical Review B. 85. DOI: 10.1103/Physrevb.85.195464 |
0.319 |
|
| 2012 |
Wang Z, Zhou Y, Bang J, Prange M, Zhang S, Gao F. Modification of Defect Structures in Graphene by Electron Irradiation: Ab Initio Molecular Dynamics Simulations The Journal of Physical Chemistry C. 116: 16070-16079. DOI: 10.1021/Jp303905U |
0.621 |
|
| 2012 |
Oh YJ, Hwang J, Noh H, Bang J, Ryu B, Chang K. Ab initio study of boron segregation and deactivation at Si/SiO2 interface Microelectronic Engineering. 89: 120-123. DOI: 10.1016/J.Mee.2011.04.036 |
0.757 |
|
| 2011 |
Chang KJ, Ryu B, Noh H, Bang J, Choi E. Electronic Structure of O-vacancy in High-k Dielectrics and Oxide Semiconductors Mrs Proceedings. 1370. DOI: 10.1557/Opl.2011.771 |
0.734 |
|
| 2010 |
Bang J, Chang KJ. Localization and one-parameter scaling in hydrogenated graphene Physical Review B - Condensed Matter and Materials Physics. 81. DOI: 10.1103/Physrevb.81.193412 |
0.427 |
|
| 2010 |
Choe DH, Bang J, Chang KJ. Electronic structure and transport properties of hydrogenated graphene and graphene nanoribbons New Journal of Physics. 12. DOI: 10.1088/1367-2630/12/12/125005 |
0.469 |
|
| 2009 |
Bang J, Chang KJ. Atomic structure and diffusion of hydrogen in ZnO Journal of the Korean Physical Society. 55: 98-102. DOI: 10.3938/Jkps.55.98 |
0.393 |
|
| 2009 |
Lee W, Choi E, Bang J, Ryu B, Chang K. First-principles Study of the Electronic Structure of CrystallineInGaO$_{
m 3}$(ZnO)$_{
m 3}$ Journal of the Korean Physical Society. 55: 112-115. DOI: 10.3938/Jkps.55.112 |
0.644 |
|
| 2009 |
Jwa S, Bang J, Chang KJ. Chemical bonding and diffusion of B dopants in C-predoped Si Physical Review B - Condensed Matter and Materials Physics. 80. DOI: 10.1103/Physrevb.80.075206 |
0.37 |
|
| 2009 |
Noh H, Ryu B, Choi E, Bang J, Chang KJ. Local bonding effect on the defect states of oxygen vacancy in amorphous HfSiO4 Applied Physics Letters. 95: 082905. DOI: 10.1063/1.3216058 |
0.75 |
|
| 2009 |
Bang J, Choi E, Chang KJ. The effect of impurities on hydrogen bonding site and local vibrational frequency in ZnO Journal of Applied Physics. 106: 053522. DOI: 10.1063/1.3213387 |
0.691 |
|
| 2008 |
Kang J, Kim Y, Bang J, Chang KJ. Direct and defect-assisted electron tunneling through ultrathinSiO2layers from first principles Physical Review B. 77. DOI: 10.1103/Physrevb.77.195321 |
0.454 |
|
| 2008 |
Kang J, Bang J, Ryu B, Chang KJ. Effect of atomic-scale defects on the low-energy electronic structure of graphene: Perturbation theory and local-density-functional calculations Physical Review B. 77. DOI: 10.1103/Physrevb.77.115453 |
0.771 |
|
| 2008 |
Lee W, Choi E, Bang J, Ryu B, Chang KJ. Structural and electronic properties of crystalline InGaO3(ZnO)m Applied Physics Letters. 93: 111901. DOI: 10.1063/1.2980583 |
0.675 |
|
| 2008 |
Bang J, Chang KJ. Diffusion and thermal stability of hydrogen in ZnO Applied Physics Letters. 92. DOI: 10.1063/1.2906379 |
0.341 |
|
| 2007 |
Bang J, Kang J, Lee W, Chang KJ, Kim H. Chemical bonding effect of Ge atoms on B diffusion in Si Physical Review B. 76. DOI: 10.1103/Physrevb.76.064118 |
0.723 |
|
| 2007 |
Bang J, Kim H, Kang J, Lee W, Chang K. Retardation of boron diffusion in SiGe alloy Physica B-Condensed Matter. 401: 196-199. DOI: 10.1016/J.Physb.2007.08.145 |
0.692 |
|
| Show low-probability matches. |