Year |
Citation |
Score |
2019 |
Geng D, Hu J, Fu W, Ang LK, Yang HY. Graphene-induced in-situ growth of monolayer and bilayer 2D SiC crystals toward high-temperature electronics. Acs Applied Materials & Interfaces. PMID 31573176 DOI: 10.1021/acsami.9b14069 |
0.92 |
|
2019 |
Pam ME, Hu J, Ang YS, Huang S, Kong D, Shi Y, Zhao X, Geng D, Pennycook SJ, Ang LK, Yang HY. High-Concentration Niobium-Substituted WS2 Basal Domains with Reconfigured Electronics Band Structure for Hydrogen Evolution Reaction. Acs Applied Materials & Interfaces. PMID 31433150 DOI: 10.1021/acsami.9b08232 |
0.92 |
|
2019 |
Wang H, Xue X, Jiang Q, Wang Y, Geng D, Cai L, Wang L, Xu Z, Yu G. Primary Nucleation-Dominated Chemical Vapor Deposition Growth for Uniform Graphene Monolayers on Dielectric Substrate. Journal of the American Chemical Society. PMID 31265267 DOI: 10.1021/jacs.9b05705 |
1 |
|
2019 |
Dong J, Geng D, Liu F, Ding F. Formation of Twinned Graphene Polycrystals. Angewandte Chemie (International Ed. in English). PMID 30968518 DOI: 10.1002/anie.201902441 |
0.6 |
|
2019 |
Pam ME, Li Z, Ang YS, Shi Y, Geng D, Huang S, Zhao X, Pennycook SJ, Yao H, Gong X, Ang LK, Yang HY. Thermal-Assisted Vertical Electron Injections in Few-Layer Pyramidal-Structured MoS Crystals. The Journal of Physical Chemistry Letters. PMID 30821153 DOI: 10.1021/acs.jpclett.9b00274 |
0.92 |
|
2019 |
Gong X, Zhao X, Pam ME, Yao H, Li Z, Geng D, Pennycook SJ, Shi Y, Yang HY. Location-selective growth of two-dimensional metallic/semiconducting transition metal dichalcogenide heterostructures. Nanoscale. PMID 30789188 DOI: 10.1039/c8nr08744j |
0.92 |
|
2019 |
Zhao X, Sun W, Geng D, Fu W, Dan J, Xie Y, Kent PRC, Zhou W, Pennycook SJ, Loh KP. Edge Segregated Polymorphism in 2D Molybdenum Carbide. Advanced Materials (Deerfield Beach, Fla.). e1808343. PMID 30785651 DOI: 10.1002/adma.201808343 |
0.8 |
|
2018 |
Geng D, Yang HY. Recent Advances in Growth of Novel 2D Materials: Beyond Graphene and Transition Metal Dichalcogenides. Advanced Materials (Deerfield Beach, Fla.). e1800865. PMID 30063268 DOI: 10.1002/adma.201800865 |
0.92 |
|
2017 |
Zhao X, Fu D, Ding Z, Zhang Y, Wan D, Tan SJR, Chen Z, Leng K, Dan J, Fu W, Geng D, Song P, Du Y, Venkatesan T, Pantelides ST, et al. Mo-terminated Edge Reconstructions in Nanoporous Molybdenum Disulfide Film. Nano Letters. PMID 29253330 DOI: 10.1021/acs.nanolett.7b04426 |
0.8 |
|
2017 |
Liu W, Ulaganathan M, Abdelwahab I, Luo X, Chen Z, Tan SJR, Wang X, Liu Y, Geng D, Bao Y, Chen J, Loh KP. Two-Dimensional Polymer Synthesized via Solid-State Polymerization for High-Performance Supercapacitors. Acs Nano. PMID 29244482 DOI: 10.1021/acsnano.7b08354 |
0.92 |
|
2017 |
Chen J, Zhao X, Grinblat G, Chen Z, Tan SJR, Fu W, Ding Z, Abdelwahab I, Li Y, Geng D, Liu Y, Leng K, Liu B, Liu W, Tang W, et al. Homoepitaxial Growth of Large-Scale Highly Organized Transition Metal Dichalcogenide Patterns. Advanced Materials (Deerfield Beach, Fla.). PMID 29219211 DOI: 10.1002/adma.201704674 |
0.92 |
|
2017 |
Geng D, Zhao X, Chen Z, Sun W, Fu W, Chen J, Liu W, Zhou W, Loh KP. Direct Synthesis of Large-Area 2D Mo2 C on In Situ Grown Graphene. Advanced Materials (Deerfield Beach, Fla.). PMID 28722179 DOI: 10.1002/adma.201700072 |
0.88 |
|
2017 |
Liu SW, Wang HP, Xu Q, Ma TB, Yu G, Zhang C, Geng D, Yu Z, Zhang S, Wang W, Hu YZ, Wang H, Luo J. Robust microscale superlubricity under high contact pressure enabled by graphene-coated microsphere. Nature Communications. 8: 14029. PMID 28195130 DOI: 10.1038/ncomms14029 |
1 |
|
2017 |
Chen J, Zhao X, Tan SJ, Xu H, Wu B, Liu B, Fu D, Fu W, Geng D, Liu Y, Liu W, Tang W, Li L, Zhou W, Sum TC, et al. Chemical Vapor Deposition of Large-size Monolayer MoSe2 Crystals on Molten Glass. Journal of the American Chemical Society. PMID 28051869 DOI: 10.1021/jacs.6b12156 |
0.92 |
|
2016 |
Chen J, Tang W, Tian B, Liu B, Zhao X, Liu Y, Ren T, Liu W, Geng D, Jeong HY, Shin HS, Zhou W, Loh KP. Chemical Vapor Deposition of High-Quality Large-Sized MoS2 Crystals on Silicon Dioxide Substrates. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 3: 1500033. PMID 27818906 DOI: 10.1002/advs.201600033 |
0.92 |
|
2015 |
Geng D, Wang H, Wan Y, Xu Z, Luo B, Xu J, Yu G. Direct Top-Down Fabrication of Large-Area Graphene Arrays by an In Situ Etching Method. Advanced Materials (Deerfield Beach, Fla.). 27: 4195-9. PMID 26095295 DOI: 10.1002/adma.201501524 |
0.76 |
|
2015 |
Geng D, Wang H, Yu G. Graphene single crystals: size and morphology engineering. Advanced Materials (Deerfield Beach, Fla.). 27: 2821-37. PMID 25809643 DOI: 10.1002/adma.201405887 |
1 |
|
2014 |
Geng D, Meng L, Chen B, Gao E, Yan W, Yan H, Luo B, Xu J, Wang H, Mao Z, Xu Z, He L, Zhang Z, Peng L, Yu G. Controlled growth of single-crystal twelve-pointed graphene grains on a liquid Cu surface. Advanced Materials (Deerfield Beach, Fla.). 26: 6423-9. PMID 25043403 DOI: 10.1002/adma.201401277 |
1 |
|
2014 |
Chen J, Guo Y, Huang L, Xue Y, Geng D, Liu H, Wu B, Yu G, Hu W, Liu Y, Zhu D. Controllable fabrication of ultrathin free-standing graphene films. Philosophical Transactions. Series a, Mathematical, Physical, and Engineering Sciences. 372: 20130017. PMID 24615152 DOI: 10.1098/rsta.2013.0017 |
1 |
|
2014 |
Luo B, Chen B, Meng L, Geng D, Liu H, Xu J, Zhang Z, Zhang H, Peng L, He L, Hu W, Liu Y, Yu G. Layer-stacking growth and electrical transport of hierarchical graphene architectures. Advanced Materials (Deerfield Beach, Fla.). 26: 3218-24. PMID 24519997 DOI: 10.1002/adma.201305627 |
0.76 |
|
2014 |
Chen J, Guo Y, Jiang L, Xu Z, Huang L, Xue Y, Geng D, Wu B, Hu W, Yu G, Liu Y. Near-equilibrium chemical vapor deposition of high-quality single-crystal graphene directly on various dielectric substrates. Advanced Materials (Deerfield Beach, Fla.). 26: 1348-53. PMID 24338972 DOI: 10.1002/adma.201304872 |
1 |
|
2013 |
Jiang L, Wu B, Liu H, Huang Y, Chen J, Geng D, Gao H, Liu Y. A general approach for fast detection of charge carrier type and conductivity difference in nanoscale materials. Advanced Materials (Deerfield Beach, Fla.). 25: 7015-9. PMID 24123236 DOI: 10.1002/adma.201302941 |
0.92 |
|
2013 |
Geng D, Wu B, Guo Y, Luo B, Xue Y, Chen J, Yu G, Liu Y. Fractal etching of graphene. Journal of the American Chemical Society. 135: 6431-4. PMID 23586921 DOI: 10.1021/ja402224h |
1 |
|
2013 |
Huang L, Wu B, Chen J, Xue Y, Geng D, Guo Y, Yu G, Liu Y. Gram-scale synthesis of graphene sheets by a catalytic arc-discharge method. Small (Weinheim An Der Bergstrasse, Germany). 9: 1330-5. PMID 23463696 DOI: 10.1002/smll.201202802 |
1 |
|
2013 |
Chen J, Guo Y, Wen Y, Huang L, Xue Y, Geng D, Wu B, Luo B, Yu G, Liu Y. Two-stage metal-catalyst-free growth of high-quality polycrystalline graphene films on silicon nitride substrates. Advanced Materials (Deerfield Beach, Fla.). 25: 992-7. PMID 23161470 DOI: 10.1002/adma.201202973 |
1 |
|
2012 |
Xue Y, Wu B, Jiang L, Guo Y, Huang L, Chen J, Tan J, Geng D, Luo B, Hu W, Yu G, Liu Y. Low temperature growth of highly nitrogen-doped single crystal graphene arrays by chemical vapor deposition. Journal of the American Chemical Society. 134: 11060-3. PMID 22721268 DOI: 10.1021/ja302483t |
1 |
|
2012 |
Geng D, Wu B, Guo Y, Huang L, Xue Y, Chen J, Yu G, Jiang L, Hu W, Liu Y. Uniform hexagonal graphene flakes and films grown on liquid copper surface. Proceedings of the National Academy of Sciences of the United States of America. 109: 7992-6. PMID 22509001 DOI: 10.1073/pnas.1200339109 |
1 |
|
2011 |
Chen J, Wen Y, Guo Y, Wu B, Huang L, Xue Y, Geng D, Wang D, Yu G, Liu Y. Oxygen-aided synthesis of polycrystalline graphene on silicon dioxide substrates. Journal of the American Chemical Society. 133: 17548-51. PMID 21988639 DOI: 10.1021/ja2063633 |
1 |
|
2011 |
Wu B, Geng D, Guo Y, Huang L, Xue Y, Zheng J, Chen J, Yu G, Liu Y, Jiang L, Hu W. Equiangular hexagon-shape-controlled synthesis of graphene on copper surface. Advanced Materials (Deerfield Beach, Fla.). 23: 3522-5. PMID 21726004 DOI: 10.1002/adma.201101746 |
1 |
|
2011 |
Wu B, Geng D, Liu Y. Evaluation of metallic and semiconducting single-walled carbon nanotube characteristics. Nanoscale. 3: 2074-85. PMID 21387025 DOI: 10.1039/c0nr00958j |
0.92 |
|
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