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Shenyuan Yang - Publications

Affiliations: 
 Institute of Semiconductors, Chinese Academy of Sciences 
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24 high-probability publications. We are testing a new system for linking publications to authors. You can help! If you notice any inaccuracies, please sign in and mark papers as correct or incorrect matches. If you identify any major omissions or other inaccuracies in the publication list, please let us know.

Year Citation  Score
2022 Liu B, Chen Q, Chen Z, Yang S, Shan J, Liu Z, Yin Y, Ren F, Zhang S, Wang R, Wu M, Hou R, Wei T, Wang J, Sun J, et al. Atomic Mechanism of Strain Alleviation and Dislocation Reduction in Highly Mismatched Remote Heteroepitaxy Using a Graphene Interlayer. Nano Letters. PMID 35404058 DOI: 10.1021/acs.nanolett.2c00632  0.338
2020 Chang H, Chen Z, Liu B, Yang S, Liang D, Dou Z, Zhang Y, Yan J, Liu Z, Zhang Z, Wang J, Li J, Liu Z, Gao P, Wei T. Quasi-2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light-Emitting Diodes. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 7: 2001272. PMID 32775172 DOI: 10.1002/Advs.202001272  0.376
2020 Zhang X, Chen Z, Chang H, Yan J, Yang S, Wang J, Gao P, Wei T. Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes. Journal of Visualized Experiments : Jove. PMID 32658181 DOI: 10.3791/60167  0.397
2020 Wang Y, Yang S, Chang H, Li W, Chen X, Hou R, Yan J, Yi X, Wang J, Wei T. Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering Applied Surface Science. 520: 146358. DOI: 10.1016/J.Apsusc.2020.146358  0.371
2020 Chen Z, Chang H, Cheng T, Wei T, Wang R, Yang S, Dou Z, Liu B, Zhang S, Xie Y, Liu Z, Zhang Y, Li J, Ding F, Gao P, et al. Nanopatterned Graphene: Direct Growth of Nanopatterned Graphene on Sapphire and Its Application in Light Emitting Diodes (Adv. Funct. Mater. 31/2020) Advanced Functional Materials. 30: 2070209. DOI: 10.1002/Adfm.202070209  0.33
2020 Chen Z, Chang H, Cheng T, Wei T, Wang R, Yang S, Dou Z, Liu B, Zhang S, Xie Y, Liu Z, Zhang Y, Li J, Ding F, Gao P, et al. Direct Growth of Nanopatterned Graphene on Sapphire and Its Application in Light Emitting Diodes Advanced Functional Materials. 30: 2001483. DOI: 10.1002/Adfm.202001483  0.326
2019 Dou Z, Chen Z, Li N, Yang S, Yu Z, Sun Y, Li Y, Liu B, Luo Q, Ma T, Liao L, Liu Z, Gao P. Atomic mechanism of strong interactions at the graphene/sapphire interface. Nature Communications. 10: 5013. PMID 31676774 DOI: 10.1038/S41467-019-13023-6  0.435
2019 Zhou Q, Cho Y, Yang S, Weiss EA, Berkelbach TC, Darancet P. Large Band Edge Tunability in Colloidal Nanoplatelets. Nano Letters. PMID 31545615 DOI: 10.1021/Acs.Nanolett.9B02645  0.321
2019 Chen Z, Liu Z, Wei T, Yang S, Dou Z, Wang Y, Ci H, Chang H, Qi Y, Yan J, Wang J, Zhang Y, Gao P, Li J, Liu Z. Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene. Advanced Materials (Deerfield Beach, Fla.). e1807345. PMID 30993771 DOI: 10.1002/Adma.201807345  0.401
2019 Chang H, Chen Z, Li W, Yan J, Hou R, Yang S, Liu Z, Yuan G, Wang J, Li J, Gao P, Wei T. Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate Applied Physics Letters. 114: 091107. DOI: 10.1063/1.5081112  0.45
2018 Chen Z, Zhang X, Dou Z, Wei T, Liu Z, Qi Y, Ci H, Wang Y, Li Y, Chang H, Yan J, Yang S, Zhang Y, Wang J, Gao P, et al. High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer. Advanced Materials (Deerfield Beach, Fla.). e1801608. PMID 29883036 DOI: 10.1002/Adma.201801608  0.391
2018 Yang S, Li J, Li S. Antiferromagnetic–ferromagnetic transition in zigzag graphene nanoribbons induced by substitutional doping Chinese Physics B. 27: 117102. DOI: 10.1088/1674-1056/27/11/117102  0.382
2017 Xiang L, Yang S. Uniaxial strain-modulated electronic structures of CdX (X = S, Se, Te) from first-principles calculations: A comparison between bulk and nanowires Chinese Physics B. 26: 87103. DOI: 10.1088/1674-1056/26/8/087103  0.313
2015 Li J, Yang S, Li S. Structural and Electronic Properties of Zigzag Graphene Nanoribbons on Si(001) Substrates Chinese Physics Letters. 32: 27101. DOI: 10.1088/0256-307X/32/2/027101  0.472
2012 Yang S, Prendergast D, Neaton JB. Tuning semiconductor band edge energies for solar photocatalysis via surface ligand passivation. Nano Letters. 12: 383-8. PMID 22192078 DOI: 10.1021/Nl203669K  0.35
2011 Yang S, Prendergast D, Neaton JB. Nonlinear variations in the electronic structure of II-VI and III-V wurtzite semiconductors with biaxial strain Applied Physics Letters. 98. DOI: 10.1063/1.3578193  0.311
2010 Yang S, Prendergast D, Neaton JB. Strain-induced band gap modification in coherent core/shell nanostructures. Nano Letters. 10: 3156-62. PMID 20698631 DOI: 10.1021/Nl101999P  0.31
2009 Yoon M, Yang S, Zhang Z. Interaction between hydrogen molecules and metallofullerenes. The Journal of Chemical Physics. 131: 064707. PMID 19691403 DOI: 10.1063/1.3197006  0.419
2008 Yang S, Yoon M, Wang E, Zhang Z. Energetics and kinetics of Ti clustering on neutral and charged C60 surfaces. The Journal of Chemical Physics. 129: 134707. PMID 19045116 DOI: 10.1063/1.2981043  0.521
2008 Yoon M, Yang S, Hicke C, Wang E, Geohegan D, Zhang Z. Calcium as the superior coating metal in functionalization of carbon fullerenes for high-capacity hydrogen storage. Physical Review Letters. 100: 206806. PMID 18518569 DOI: 10.1103/Physrevlett.100.206806  0.549
2008 Yang S, Yoon M, Hicke C, Zhang Z, Wang E. Electron transfer and localization in endohedral metallofullerenes: Ab initio density functional theory calculations Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.115435  0.578
2008 Yang S, Zhang L, Chen H, Wang E, Zhang Z. Generic guiding principle for the prediction of metal-induced reconstructions of compound semiconductor surfaces Physical Review B. 78: 75305. DOI: 10.1103/Physrevb.78.075305  0.541
2007 Yoon M, Yang S, Wang E, Zhang Z. Charged fullerenes as high-capacity hydrogen storage media. Nano Letters. 7: 2578-83. PMID 17718530 DOI: 10.1021/Nl070809A  0.548
2007 Jiang Y, Kim Y, Zhang SB, Ebert P, Yang S, Tang Z, Wu K, Wang EG. Growing extremely thin bulklike metal film on a semiconductor surface: Monolayer Al(111) on Si(111) Applied Physics Letters. 91: 181902. DOI: 10.1063/1.2804010  0.574
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