Year |
Citation |
Score |
2022 |
Liu B, Chen Q, Chen Z, Yang S, Shan J, Liu Z, Yin Y, Ren F, Zhang S, Wang R, Wu M, Hou R, Wei T, Wang J, Sun J, et al. Atomic Mechanism of Strain Alleviation and Dislocation Reduction in Highly Mismatched Remote Heteroepitaxy Using a Graphene Interlayer. Nano Letters. PMID 35404058 DOI: 10.1021/acs.nanolett.2c00632 |
0.338 |
|
2020 |
Chang H, Chen Z, Liu B, Yang S, Liang D, Dou Z, Zhang Y, Yan J, Liu Z, Zhang Z, Wang J, Li J, Liu Z, Gao P, Wei T. Quasi-2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light-Emitting Diodes. Advanced Science (Weinheim, Baden-Wurttemberg, Germany). 7: 2001272. PMID 32775172 DOI: 10.1002/Advs.202001272 |
0.376 |
|
2020 |
Zhang X, Chen Z, Chang H, Yan J, Yang S, Wang J, Gao P, Wei T. Graphene-Assisted Quasi-van der Waals Epitaxy of AlN Film on Nano-Patterned Sapphire Substrate for Ultraviolet Light Emitting Diodes. Journal of Visualized Experiments : Jove. PMID 32658181 DOI: 10.3791/60167 |
0.397 |
|
2020 |
Wang Y, Yang S, Chang H, Li W, Chen X, Hou R, Yan J, Yi X, Wang J, Wei T. Flexible graphene-assisted van der Waals epitaxy growth of crack-free AlN epilayer on SiC by lattice engineering Applied Surface Science. 520: 146358. DOI: 10.1016/J.Apsusc.2020.146358 |
0.371 |
|
2020 |
Chen Z, Chang H, Cheng T, Wei T, Wang R, Yang S, Dou Z, Liu B, Zhang S, Xie Y, Liu Z, Zhang Y, Li J, Ding F, Gao P, et al. Nanopatterned Graphene: Direct Growth of Nanopatterned Graphene on Sapphire and Its Application in Light Emitting Diodes (Adv. Funct. Mater. 31/2020) Advanced Functional Materials. 30: 2070209. DOI: 10.1002/Adfm.202070209 |
0.33 |
|
2020 |
Chen Z, Chang H, Cheng T, Wei T, Wang R, Yang S, Dou Z, Liu B, Zhang S, Xie Y, Liu Z, Zhang Y, Li J, Ding F, Gao P, et al. Direct Growth of Nanopatterned Graphene on Sapphire and Its Application in Light Emitting Diodes Advanced Functional Materials. 30: 2001483. DOI: 10.1002/Adfm.202001483 |
0.326 |
|
2019 |
Dou Z, Chen Z, Li N, Yang S, Yu Z, Sun Y, Li Y, Liu B, Luo Q, Ma T, Liao L, Liu Z, Gao P. Atomic mechanism of strong interactions at the graphene/sapphire interface. Nature Communications. 10: 5013. PMID 31676774 DOI: 10.1038/S41467-019-13023-6 |
0.435 |
|
2019 |
Zhou Q, Cho Y, Yang S, Weiss EA, Berkelbach TC, Darancet P. Large Band Edge Tunability in Colloidal Nanoplatelets. Nano Letters. PMID 31545615 DOI: 10.1021/Acs.Nanolett.9B02645 |
0.321 |
|
2019 |
Chen Z, Liu Z, Wei T, Yang S, Dou Z, Wang Y, Ci H, Chang H, Qi Y, Yan J, Wang J, Zhang Y, Gao P, Li J, Liu Z. Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene. Advanced Materials (Deerfield Beach, Fla.). e1807345. PMID 30993771 DOI: 10.1002/Adma.201807345 |
0.401 |
|
2019 |
Chang H, Chen Z, Li W, Yan J, Hou R, Yang S, Liu Z, Yuan G, Wang J, Li J, Gao P, Wei T. Graphene-assisted quasi-van der Waals epitaxy of AlN film for ultraviolet light emitting diodes on nano-patterned sapphire substrate Applied Physics Letters. 114: 091107. DOI: 10.1063/1.5081112 |
0.45 |
|
2018 |
Chen Z, Zhang X, Dou Z, Wei T, Liu Z, Qi Y, Ci H, Wang Y, Li Y, Chang H, Yan J, Yang S, Zhang Y, Wang J, Gao P, et al. High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer. Advanced Materials (Deerfield Beach, Fla.). e1801608. PMID 29883036 DOI: 10.1002/Adma.201801608 |
0.391 |
|
2018 |
Yang S, Li J, Li S. Antiferromagnetic–ferromagnetic transition in zigzag graphene nanoribbons induced by substitutional doping Chinese Physics B. 27: 117102. DOI: 10.1088/1674-1056/27/11/117102 |
0.382 |
|
2017 |
Xiang L, Yang S. Uniaxial strain-modulated electronic structures of CdX (X = S, Se, Te) from first-principles calculations: A comparison between bulk and nanowires Chinese Physics B. 26: 87103. DOI: 10.1088/1674-1056/26/8/087103 |
0.313 |
|
2015 |
Li J, Yang S, Li S. Structural and Electronic Properties of Zigzag Graphene Nanoribbons on Si(001) Substrates Chinese Physics Letters. 32: 27101. DOI: 10.1088/0256-307X/32/2/027101 |
0.472 |
|
2012 |
Yang S, Prendergast D, Neaton JB. Tuning semiconductor band edge energies for solar photocatalysis via surface ligand passivation. Nano Letters. 12: 383-8. PMID 22192078 DOI: 10.1021/Nl203669K |
0.35 |
|
2011 |
Yang S, Prendergast D, Neaton JB. Nonlinear variations in the electronic structure of II-VI and III-V wurtzite semiconductors with biaxial strain Applied Physics Letters. 98. DOI: 10.1063/1.3578193 |
0.311 |
|
2010 |
Yang S, Prendergast D, Neaton JB. Strain-induced band gap modification in coherent core/shell nanostructures. Nano Letters. 10: 3156-62. PMID 20698631 DOI: 10.1021/Nl101999P |
0.31 |
|
2009 |
Yoon M, Yang S, Zhang Z. Interaction between hydrogen molecules and metallofullerenes. The Journal of Chemical Physics. 131: 064707. PMID 19691403 DOI: 10.1063/1.3197006 |
0.419 |
|
2008 |
Yang S, Yoon M, Wang E, Zhang Z. Energetics and kinetics of Ti clustering on neutral and charged C60 surfaces. The Journal of Chemical Physics. 129: 134707. PMID 19045116 DOI: 10.1063/1.2981043 |
0.521 |
|
2008 |
Yoon M, Yang S, Hicke C, Wang E, Geohegan D, Zhang Z. Calcium as the superior coating metal in functionalization of carbon fullerenes for high-capacity hydrogen storage. Physical Review Letters. 100: 206806. PMID 18518569 DOI: 10.1103/Physrevlett.100.206806 |
0.549 |
|
2008 |
Yang S, Yoon M, Hicke C, Zhang Z, Wang E. Electron transfer and localization in endohedral metallofullerenes: Ab initio density functional theory calculations Physical Review B - Condensed Matter and Materials Physics. 78. DOI: 10.1103/Physrevb.78.115435 |
0.578 |
|
2008 |
Yang S, Zhang L, Chen H, Wang E, Zhang Z. Generic guiding principle for the prediction of metal-induced reconstructions of compound semiconductor surfaces Physical Review B. 78: 75305. DOI: 10.1103/Physrevb.78.075305 |
0.541 |
|
2007 |
Yoon M, Yang S, Wang E, Zhang Z. Charged fullerenes as high-capacity hydrogen storage media. Nano Letters. 7: 2578-83. PMID 17718530 DOI: 10.1021/Nl070809A |
0.548 |
|
2007 |
Jiang Y, Kim Y, Zhang SB, Ebert P, Yang S, Tang Z, Wu K, Wang EG. Growing extremely thin bulklike metal film on a semiconductor surface: Monolayer Al(111) on Si(111) Applied Physics Letters. 91: 181902. DOI: 10.1063/1.2804010 |
0.574 |
|
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